CN118013913A - Multi-element regulation and control parameter loss model construction method based on Si and SiC mixed device - Google Patents
Multi-element regulation and control parameter loss model construction method based on Si and SiC mixed device Download PDFInfo
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Abstract
The method for constructing the multielement regulation parameter loss model based on the Si and SiC mixed device comprises the following steps: acquiring single switching loss functions of bus voltage, load current and junction temperature on the Si IGBT and the SiC MOSFET respectively; combining a switching mode adopted by the hybrid device, and constructing a switching loss model of the hybrid device according to a single switching loss function; acquiring single on-resistance functions of the driving voltage and the junction temperature on the Si IGBT and the SiC MOSFET respectively; constructing a conduction loss model of the hybrid device according to the shunt characteristic difference and the single conduction resistance function of each device in the hybrid device under different load currents; and taking the switching loss model and the conduction loss model as a multi-element regulation and control parameter loss model.
Description
Technical Field
The invention relates to the technical field of power device loss, in particular to a method for constructing a multielement regulation and control parameter loss model based on a Si and SiC hybrid device.
Background
At present, a Si IGBT/SiC MOSFET hybrid device is formed by connecting a high-power Si device and a low-power SiC device in parallel, so that the compromise between the high performance characteristic of the SiC MOSFET and the low cost advantage of the Si IGBT can be realized, the Si IGBT/SiC MSFET hybrid device provides a new thought for improving the performance of the device, and in order to promote the wide application of the hybrid device, related scholars develop a plurality of researches on the loss model of the Si IGBT/SiC MOSFET hybrid device.
The method for obtaining the loss model of the Si/SiC hybrid device in the prior art generally carries out nonlinear fitting on the switching loss of the Si IGBT/SiC MOSFET hybrid device, and fits a function of the switching loss according to the data of the double-pulse test loss.
Disclosure of Invention
In view of the above, the invention provides a method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device, which is used for at least solving the problem that the loss model of the hybrid device has poor universality because the loss model in the prior art cannot effectively take into account the multi-regulation and control parameters of the hybrid device based on fixed driving voltage and driving resistance.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a method for constructing a multielement regulation parameter loss model based on a Si and SiC hybrid device comprises a Si IGBT and a SiC MOSFET, and the method comprises the following steps:
Obtaining single switching loss functions of bus voltage, load current and junction temperature on the Si IGBT and the SiC MOSFET respectively;
Combining a switching mode adopted by the hybrid device, and constructing a switching loss model of the hybrid device according to the single switching loss function;
Acquiring single on-resistance functions of driving voltage and junction temperature on the Si IGBT and the SiC MOSFET respectively;
Constructing a conduction loss model of the hybrid device according to the shunt characteristic difference of each device in the hybrid device under different load currents and the single conduction resistance function;
And taking the switching loss model and the conduction loss model as a multi-element regulation and control parameter loss model.
Preferably, the single switching loss function includes an on-loss function of the SiC MOSFETAnd turn-off loss function/>Also comprises an opening loss function/>, of the Si IGBTAnd turn-off loss function/>Wherein:
，
，
，
，
Wherein: and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistance, the reference driving resistance, the turn-on loss reference value and the junction temperature of the SiC MOSFET;
and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistance, the reference driving resistance, the turn-on loss reference value and the junction temperature of the Si IGBT;
and/> Respectively representing load current, a load current reference value, bus voltage, a bus voltage reference value and a junction temperature reference value;
and/> Respectively representing correction coefficients of the SiC MOSFET;
and/> And the correction coefficients of the Si IGBTs are respectively represented.
Preferably, the switching loss model comprises a hybrid on loss modelAnd hybrid turn-off loss model/>The mixed opening loss model/>Including the turn-on loss function/>, of the SiC MOSFETAnd turn-on delay time/>Internally generated extra conduction loss/>The hybrid turn-off loss model/>An off-loss function/>, comprising the SiC MOSFETAnd off delay time/>Internally generated extra conduction lossAlso comprises the turn-off loss/>, which is generated when the Si IGBT is turned off。
Preferably, the mixed turn-on loss modelAnd hybrid turn-off loss model/>The method comprises the following steps:
，
，
In the method, in the process of the invention, Representing load current,/>Represents the on-resistance of the SiC MOSFET,/>Represents the on time of the single SiC MSOFET,/>Represents the turn-on delay time of the Si IGBT,/>Indicating the turn-off time of the Si IGBT.
Preferably, the Si IGBT and the SiC MOSFET have single on-resistance functions of respectivelyAnd/>Wherein/>And/>The positive correlation with the self-driving voltage and the linear positive correlation with the self-junction temperature are as follows:
，
，
Wherein: and/> The reference driving voltage, the on-resistance temperature influencing factor, the junction temperature, the driving voltage correction factor and the reference on-resistance of the SiC MOSFET are respectively obtained;
and/> And the reference driving voltage, the on-resistance temperature influencing factor, the junction temperature, the driving voltage correcting factor and the reference on-resistance of the Si IGBT are respectively obtained.
Preferably, the specific content of the shunt characteristic difference of each device in the hybrid device under different load currents comprises:
when the hybrid device loads current Less than inflection point current value/>When the conduction voltage drop of the hybrid device is smaller than the conduction threshold voltage of the Si IGBT,/>Only through the SiC MOSFET;
when the hybrid device loads current Greater than the inflection point current value/>When, then/>And sharing by the SiC MOSFET and the Si IGBT together.
Preferably, the specific representation of the difference of the shunt characteristics of each device in the hybrid device under different load currents is as follows:
，
，
，
In the method, in the process of the invention, ：
，
，
，
In the method, in the process of the invention,For the load current flowing through the SiC MOSFET,/>For the load current flowing through the Si IGBT,/>For the conduction voltage drop of the hybrid device,/>As a single on-resistance function of the Si IGBT,/>As a single on-resistance function of the SiC MOSFET,/>And the turn-on threshold voltage of the Si IGBT.
Preferably, the inflection point current valueThe method comprises the following steps:
，
In the method, in the process of the invention, Is the turn-on threshold voltage of IGBT,/>Is a single on-resistance function of the SiC MOSFET.
Preferably, the conduction loss modelExpressed as:
。
Compared with the prior art, the invention discloses a method for constructing a multielement regulation and control parameter loss model based on a Si and SiC hybrid device, which has the following beneficial effects:
1) Aiming at the problem that the existing loss model of the hybrid device cannot simultaneously consider the multiple regulation parameters such as the driving voltage and the driving resistance of the hybrid device, the invention provides a method for constructing the loss model of the multiple regulation parameters based on the Si IGBT/SiC MOSFET hybrid device, which has more comprehensive parameter consideration, wider application range and higher accuracy, and considers the influence of the regulation parameters such as the driving voltage and the driving resistance of the hybrid device on the loss;
2) The experiment provides theoretical guidance for the design of the switching strategy of the hybrid device based on the optimization of the regulation and control parameters.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a hybrid device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an exemplary switching sequence of a hybrid device according to an embodiment of the present invention;
FIG. 3 is a waveform diagram of a Si IGBT/SiC MOSFET hybrid device provided by an embodiment of the invention;
FIG. 4 is a flow chart of a multi-regulation parameter loss model construction based on a Si IGBT/SiC MOSFET hybrid device provided by the embodiment of the invention;
FIG. 5 is a schematic diagram of a double pulse test experiment provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram of steady state parameter measurement according to an embodiment of the present invention;
FIG. 7 is a graph of a fitting result of a hybrid device opening loss model provided by an embodiment of the present invention;
FIG. 8 is a graph of fitting results of a hybrid turn-off loss model provided by an embodiment of the present invention;
FIG. 9 is a graph showing the verification result of the relation between the turn-on loss and the driving voltage under different driving resistances according to the embodiment of the present invention;
FIG. 10 is a graph showing the verification result of the relationship between the turn-off loss and the driving voltage of the hybrid device under different driving resistances according to the embodiment of the present invention;
FIG. 11 is a graph showing the relationship between the on-resistance and the driving voltage according to the embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a method for constructing a multielement regulation parameter loss model based on a Si and SiC hybrid device, wherein the hybrid device comprises a Si IGBT and a SiC MOSFET, and the method comprises the following steps:
acquiring single switching loss functions of bus voltage, load current and junction temperature on the Si IGBT and the SiC MOSFET respectively;
combining a switching mode adopted by the hybrid device, and constructing a switching loss model of the hybrid device according to a single switching loss function;
Acquiring single on-resistance functions of the driving voltage and the junction temperature on the Si IGBT and the SiC MOSFET respectively;
Constructing a conduction loss model of the hybrid device according to the shunt characteristic difference and the single conduction resistance function of each device in the hybrid device under different load currents;
and taking the switching loss model and the conduction loss model as a multi-element regulation and control parameter loss model.
It should be noted that: the Si/SiC hybrid device consists of a high-power Si IGBT and a low-power SiC MOSFET which are connected in parallel, and the basic structure of the Si/SiC hybrid device is shown in figure 1. The operation state is divided into two cases, on the one hand, when the load current of the hybrid device is small, the load current entirely flows through the SiC MOSFET due to the presence of the Si IGBT on threshold voltage. On the other hand, when the load current of the hybrid device is large, the load current is borne by the SiC MOSFET and the Si IGBT together, and the magnitude of the load current distributed by each device in the hybrid device is related to the on-resistance of the device itself.
Meanwhile, in order to improve the efficiency of the Si IGBT/SiC MOSFET hybrid device as much as possible, a switching mode which is commonly adopted in the driving time sequence is shown in fig. 2, and the typical switching mode utilizes the low switching loss advantage of the SiC MOSFET, so that the SiC MOSFET is turned on and then turned off compared with the Si IGBT, the soft switching of the Si IGBT is realized, and the low switching loss advantage of the SiC MOSFET and the low conduction loss advantage of the Si IGBT can be effectively combined. The loss model of the hybrid device comprises a switching loss model and a conduction loss model, wherein the switching loss model of the hybrid device can be divided into an opening loss model and an closing loss model; the switching waveforms of the Si IGBT/SiC MOSFET hybrid device are shown in fig. 3.
In the specific implementation process, as shown in fig. 4, when a switching loss model of the hybrid device is constructed, according to a data manual of Si IGBT and SiC MOSFET in the Si IGBT/SiC MOSFET hybrid device, functions of bus voltage, load current and device junction temperature on single Si IGBT switching loss and single SiC MOSFET switching loss are fitted, and a switching mode adopted by the hybrid device is combined, so that a switching loss function of the Si IGBT/SiC MOSFET hybrid device is obtained, and for correction coefficients which cannot be directly obtained from the data manual, correction coefficients of driving voltage and driving resistance are perfected according to a double-pulse switching loss test of the hybrid device, so that correction coefficients of each regulation parameter on the switching loss of the hybrid device are obtained. When the conduction loss model of the hybrid device is constructed, the function of the drive voltage and the device junction temperature to the conduction resistance of the single device is fitted according to the data manual of the Si IGBT and the SiC MOSFET, and the conduction loss model mixed under different load currents is obtained by combining the switching mode and the load current of the hybrid device. And finally, carrying out experimental verification on a switching loss model and a conduction loss model of the hybrid device.
To further implement the above technical solution, the single switching loss function includes an on-loss function of the SiC MOSFETAnd turn-off loss function/>Also comprises an opening loss function/>, of the Si IGBTAnd turn-off loss function/>Wherein:
，
，
，
，
Wherein: and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistor, the reference value of the turn-on loss and the junction temperature of the SiC MOSFET;
and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistor, the reference driving resistor, the turn-on loss reference value and the junction temperature of the Si IGBT;
and/> Respectively representing load current, a load current reference value, bus voltage, a bus voltage reference value and a junction temperature reference value;
and/> Respectively representing correction coefficients of the SiC MOSFET;
and/> The correction coefficients of Si IGBTs are shown, respectively.
In order to further implement the above technical solution, the switching loss model includes a hybrid turn-on loss modelAnd hybrid turn-off loss model/>Mixed opening loss model/>Including the turn-on loss function/>, of a SiC MOSFETAnd turn-on delay time/>Internally generated extra conduction loss/>Hybrid turn-off loss model/>Turn-off loss function comprising SiC MOSFET ]And off delay time/>Internally generated extra conduction loss/>Also comprises the turn-off loss/>, which is generated when the Si IGBT is turned off。
In order to further implement the above technical solution, a hybrid turn-on loss modelAnd hybrid turn-off loss model/>The method comprises the following steps:
，
，
In the method, in the process of the invention, Representing load current,/>Representing the on-resistance of SiC MOSFET,/>Represents the on time of a single SiC MSOFET-Represents the turn-on delay time of Si IGBT,/>The off time of the Si IGBT is indicated.
It should be noted that:
In a typical switching mode of the hybrid device, the switching loss of the hybrid device consists of the switching loss of the SiC MOSFET, the switching loss of the Si IGBT and the additional conduction loss, and when the hybrid device is switched on first and then switched off through the SiC MOSFET, the Si IGBT has zero voltage switching, and when the hybrid device is switched on, the SiC MOSFET generates the switching loss And at turn-on delay time/>Will alone produce additional conduction loss/>Si IGBT turn-on loss/>0UJ. When the hybrid device is turned off, the SiC MOSFET will generate turn-off loss/>And at turn-off delay time/>Will alone produce additional conduction loss/>However, the Si IGBT still generates turn-off loss/>, when turned off, due to the existence of trailing current. The switching losses of the hybrid device are therefore as shown in the above equation.
In order to further implement the above technical scheme, the single on-resistance functions of the Si IGBT and the SiC MOSFET are respectivelyAnd/>Wherein/>And/>The positive correlation with the self-driving voltage and the linear positive correlation with the self-junction temperature are as follows:
，
，
Wherein: and/> The reference drive voltage, the on-resistance temperature influencing factor, the junction temperature, the drive voltage correction factor and the reference on-resistance of the SiC MOSFET are respectively;
and/> The reference drive voltage, the on-resistance temperature influencing factor, the junction temperature, the drive voltage correction factor and the reference on-resistance of the Si IGBT are respectively obtained.
In order to further implement the technical scheme, the specific contents of the shunt characteristic difference of each device in the hybrid device under different load currents include:
when the hybrid device loads current Less than inflection point current value/>When the conduction voltage drop of the hybrid device is smaller than the conduction threshold voltage of the Si IGBT,/>Only through SiC MOSFETs;
when the hybrid device loads current Greater than the inflection point current value/>When, then/>The SiC MOSFET and the Si IGBT share the same.
In order to further implement the technical scheme, the specific representation of the shunt characteristic difference of each device in the hybrid device under different load currents is as follows:
，
，
，
In the method, in the process of the invention, For the load current flowing through the SiC MOSFET,/>For the load current flowing through the Si IGBT,/>For the conduction voltage drop of the hybrid device,/>As a single on-resistance function of Si IGBT,/>As a single on-resistance function of SiC MOSFET,/>Is the on threshold voltage of the Si IGBT.
In order to further implement the above technical solution, the inflection point current valueThe method comprises the following steps:
in the/> Is the turn-on threshold voltage of IGBT,/>Is a single on-resistance function of a SiC MOSFET.
In order to further implement the above technical solution, a conduction loss modelExpressed as:
。
the invention will be further described in connection with experiments as follows:
In the experiment, a double-pulse test experiment platform and a steady-state parameter measurement experiment platform are built to verify the built loss model of the hybrid device, and a 1200V/25A Si IGBT (IGW 25N120H 3) is selected as a main device to be combined with a 1200V/12.5A SiC MOSFET (C2M 0160120D) to form the Si IGBT/SiC MOSFET hybrid device.
The double-pulse test experiment platform constructed by the experiment is used for measuring the switching loss of the hybrid device, as shown in fig. 5, and specific parameters of the double-pulse test platform are shown in table 1.
Table 1 parameters related to the double pulse test platform
In addition, the steady-state parameter measurement experiment platform constructed by the experiment is used for measuring the conduction loss power of the hybrid device, and the experiment platform is shown in fig. 6. The conduction loss of the hybrid device is measured under the rated current 25A of the hybrid device, the current conversion of the circuit is realized through the switch S 1 and the switch S 2, and meanwhile, the junction temperature of the hybrid device is kept constant by using the incubator.
Constructing a switching loss model:
The experiment verifies a switching loss model of the hybrid device, and each parameter correction coefficient in the switching loss of a single device can be obtained according to a data manual of Si IGBT and SiC MOSFET in the hybrid device as follows:
Table 2 switching loss correction factor
The driving voltage and the driving resistance correction coefficient in the switching loss model of the hybrid device can be obtained according to double-pulse test fitting, and meanwhile, the turn-off loss generated by Si IGBT trailing currentAnd off delay time/>In relation, this loss can be obtained by a double pulse test fit. According to the built double-pulse test platform, when the driving resistance of the hybrid device is unified to be 20Ω, the switching loss of the hybrid device is fitted with the double-pulse experimental result, and the fitting effects of the switching-on loss model and the switching-off loss model are respectively shown in fig. 7 and 8:
from the fitting result of the switching loss and experimental result in fig. 7 and 8, the switching loss expression of the hybrid device can be summarized as:
Under the rated current 25A, the experiment further selects the driving resistors 40 omega and 60 omega for switching loss verification, the relation between the switching loss and the driving voltage of the hybrid device under different driving resistors is shown in figure 9, and the relation between the switching loss and the driving voltage of the hybrid device under different driving resistors is shown in figure 10.
As can be seen from fig. 9 to 10, when the driving resistance of the hybrid device is fixed, the switching loss of the hybrid device decreases as the driving voltage of the hybrid device increases, and when the driving resistance of the hybrid device is 40Ω, the switching loss error is no more than 6.07% at maximum, and the switching loss error is no more than 2.2% at maximum. When the driving resistance of the hybrid device is 60 omega, the maximum switching-on loss error is not more than 5.6%, and the maximum switching-off loss error is not more than 3.5%. Therefore, the switching loss model of the hybrid device constructed by the experiment can accurately reflect the change relation of the switching loss of the hybrid device along with the driving voltage and the driving resistance.
Conduction loss model:
Similarly, the test verifies the conduction loss model of the hybrid device, and when the load current is fixed, namely the conduction resistance model of the hybrid device in a steady state is verified, and according to a data manual of the Si IGBT and the SiC MOSFET in the hybrid device, each parameter correction coefficient in the conduction resistance of the single device can be obtained as follows:
TABLE 3 correction coefficient of on-resistance
For the convenience of analysis, the experiment selects the on-resistance of the hybrid device and the variation relation of the driving voltage of the SiC MOSFET under the driving voltages (15V and 20V) of different Si IGBTs. Under the load current 25A condition, the variation relationship of the on-resistance of the hybrid device with the Si IGBT driving voltage along with SiC MSOFET is shown in fig. 11.
As is clear from fig. 11, when the driving voltage of the Si IGBT in the hybrid device is fixed, the on-resistance of the hybrid device decreases as the driving voltage of the SiC MOSFET increases, and the error is not more than 6.06% at the maximum when the driving voltage of the Si IGBT is 15V, and not more than 9.5% at the maximum when the driving voltage of the Si IGBT is 20V. Therefore, the conduction loss model of the hybrid device built by the experiment can accurately reflect the change relation between the hybrid device and the driving voltage.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (9)
1. The method for constructing the multi-element regulation and control parameter loss model based on the Si and SiC mixed device comprises an Si IGBT and an SiC MOSFET, and is characterized by comprising the following steps:
Obtaining single switching loss functions of bus voltage, load current and junction temperature on the Si IGBT and the SiC MOSFET respectively;
Combining a switching mode adopted by the hybrid device, and constructing a switching loss model of the hybrid device according to the single switching loss function;
Acquiring single on-resistance functions of driving voltage and junction temperature on the Si IGBT and the SiC MOSFET respectively;
Constructing a conduction loss model of the hybrid device according to the shunt characteristic difference of each device in the hybrid device under different load currents and the single conduction resistance function;
And taking the switching loss model and the conduction loss model as a multi-element regulation and control parameter loss model.
2. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 1, wherein the single switching loss function comprises an on loss function of the SiC MOSFETAnd turn-off loss function/>Also comprises an opening loss function/>, of the Si IGBTTurn-off loss functionWherein:
，
，
，
，
Wherein: and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistance, the reference driving resistance, the turn-on loss reference value and the junction temperature of the SiC MOSFET;
and/> Respectively representing the driving voltage, the reference driving voltage, the driving resistance, the reference driving resistance, the turn-on loss reference value and the junction temperature of the Si IGBT;
and/> Respectively representing load current, a load current reference value, bus voltage, a bus voltage reference value and a junction temperature reference value;
and/> Respectively representing correction coefficients of the SiC MOSFET;
and/> And the correction coefficients of the Si IGBTs are respectively represented.
3. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 1, wherein the switching loss model comprises a hybrid on-loss modelAnd hybrid turn-off loss model/>The mixed opening loss model/>Including the turn-on loss function/>, of the SiC MOSFETAnd turn-on delay time/>Internally generated extra conduction loss/>The hybrid turn-off loss model/>An off-loss function/>, comprising the SiC MOSFETAnd off delay time/>Internally generated extra conduction loss/>Also comprises the turn-off loss/>, which is generated when the Si IGBT is turned off。
4. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 3, wherein the hybrid opening loss model is characterized in thatAnd hybrid turn-off loss model/>The method comprises the following steps:
，
，
In the method, in the process of the invention, Representing load current,/>Represents the on-resistance of the SiC MOSFET,/>Represents the on time of a single SiC MSOFET-Represents the turn-on delay time of the Si IGBT,/>Indicating the turn-off time of the Si IGBT.
5. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 1, wherein the single on-resistance functions of the Si IGBT and the SiC MOSFET are respectivelyAnd/>Wherein/>AndThe positive correlation with the self-driving voltage and the linear positive correlation with the self-junction temperature are as follows:
，
，
Wherein: and/> The reference driving voltage, the on-resistance temperature influencing factor, the junction temperature, the driving voltage correction factor and the reference on-resistance of the SiC MOSFET are respectively obtained;
and/> And the reference driving voltage, the on-resistance temperature influencing factor, the junction temperature, the driving voltage correcting factor and the reference on-resistance of the Si IGBT are respectively obtained.
6. The method for constructing the multi-element regulation and control parameter loss model based on the Si and SiC hybrid device according to claim 1, wherein the specific content of the shunt characteristic difference of each device in the hybrid device under different load currents comprises the following steps:
when the hybrid device loads current Less than inflection point current value/>When the conduction voltage drop of the hybrid device is smaller than the conduction threshold voltage of the Si IGBT,/>Only through the SiC MOSFET;
when the hybrid device loads current Greater than the inflection point current value/>When, then/>And sharing by the SiC MOSFET and the Si IGBT together.
7. The method for constructing the multi-element regulation and control parameter loss model based on the Si and SiC hybrid device according to claim 6, wherein the specific representation of the difference of the shunt characteristics of each device in the hybrid device under different load currents is as follows:
，
，
，
In the method, in the process of the invention, For the load current flowing through the SiC MOSFET,/>For the load current flowing through the Si IGBT,/>For the conduction voltage drop of the hybrid device,/>As a single on-resistance function of the Si IGBT,/>As a single on-resistance function of the SiC MOSFET,/>And the turn-on threshold voltage of the Si IGBT.
8. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 6, wherein the inflection point current value isThe method comprises the following steps:
in the/> Is the turn-on threshold voltage of IGBT,/>Is a single on-resistance function of the SiC MOSFET.
9. The method for constructing a multi-element regulation and control parameter loss model based on a Si and SiC hybrid device according to claim 7, wherein the conduction loss model is as followsExpressed as:
。
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