CN118013908B - Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters - Google Patents
Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters Download PDFInfo
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Abstract
A Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters comprises the following steps: establishing a conduction loss model, a switching loss model and an overshoot current model; determining a preselected combination scheme for the hybrid device based on the power combining characteristics of the individual devices within the hybrid device; acquiring peak currents of each SiC MOSFET in a preselected combination scheme through an overshoot current model, and determining a scheme meeting transient tolerance conditions in the preselected combination scheme; based on a conduction loss model, obtaining sub-load currents flowing through the SiC MOSFET and the IGBT respectively under different load currents, and determining a scheme meeting the dynamic shunt characteristic condition of the hybrid device in the screened scheme to obtain a primary selection scheme; and (5) carrying out comprehensive performance comparison on the initial selection scheme to obtain a final selection scheme.
Description
Technical Field
The invention relates to the technical field of electronic power, in particular to a method for selecting a Si/SiC hybrid device and evaluating performance by considering multielement regulation parameters.
Background
Si IGBT and SiC MOSFET are used as the power semiconductor devices which are mainstream at present, and have remarkable advantages and disadvantages in the application process. The Si IGBT has the advantages of low cost and low conduction loss due to the mature manufacturing process and the self conductivity modulation effect, but the existence of the trailing current makes the switching loss of the Si IGBT larger, so that the application of the Si IGBT in high switching frequency is limited. Although the wide bandgap device SiC MOSFET has the advantages of low switching loss, high switching speed and high switching frequency, the SiC device has the problems of low process maturity, high material defect density, high cost and the like. Based on this, many scholars propose a Si/SiC hybrid device in which a high-power Si IGBT and a low-power SiC MOSFET are connected in parallel to solve the inherent problems of the Si IGBT and the SiC MOSFET, thereby achieving both high efficiency and low cost.
However, in the research of the loss model of the existing hybrid device, only external parameters (such as bus voltage, load current and the like) and turn-off delay time of the device are considered, and regulation parameters (such as driving voltage and driving resistance) of the device are not considered, so that the problem that the accuracy of the loss model of the hybrid device is low and the application range is narrow is solved. Meanwhile, in the aspect of the type selection of the hybrid device, 3 current ratios of the hybrid device are selected in the existing research to analyze the influence of the current ratios on the conduction loss, the switching loss and the short circuit characteristic of the hybrid device, and the current ratio selection in the type selection research of the hybrid device lacks basis. The cost advantage of a Si/SiC hybrid device with a current ratio of 4:1 or 6:1 compared with a single SiC MOSFET device is proved by improving a packaging technology, but the problems of complex process technology, narrow application range and the like exist by researching the optimal current ratio by improving the packaging technology.
Disclosure of Invention
In view of the above, the invention provides a method for selecting the type and evaluating the performance of a Si/SiC hybrid device by considering multiple regulation parameters, which is used for at least solving the problems of narrow application range of the existing hybrid device loss model and lack of theoretical basis for selecting the type of the hybrid device.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
A Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters comprises the following steps:
S1, respectively obtaining the on-resistance of the SiC MOSFET and the IGBT according to the driving voltage of the SiC MOSFET and the IGBT in the hybrid device, and passing through the on-resistance of the SiC MOSFET Obtaining inflection point currentAccording to the load currentAnd (3) withRespectively establishing a conduction loss model according to the magnitude relation of the power supply voltage;
S2, obtaining hard switching loss and hard switching loss of an SiC MOSFET and an IGBT in the hybrid device according to the driving resistor and the driving voltage, and obtaining a switching loss model according to the hard switching loss, the hard switching loss and the switching voltage;
S3, reverse recovery of charge through SiC MOSFET body diode Obtaining an overshoot current valueWill be according toObtaining peak current of lower bridge arm hybrid deviceAs an overshoot current model;
S4, determining a preselected combination scheme of the hybrid device based on the power combination characteristic of a single device in the hybrid device; acquiring peak currents of each SiC MOSFET in a preselected combination scheme through an overshoot current model, taking the peak currents smaller than the maximum current value of a safety working domain as transient tolerance conditions, and determining a scheme meeting the transient tolerance conditions in the preselected combination scheme;
S5, based on a conduction loss model, obtaining sub-load currents flowing through the SiC MOSFET and the IGBT respectively under different load currents, taking the sub-load currents smaller than rated sub-load currents as dynamic shunt characteristic conditions of the hybrid device, and determining a scheme meeting the dynamic shunt characteristic conditions of the hybrid device in the scheme screened by the S4 to obtain a primary selection scheme;
s6, carrying out comprehensive performance comparison on the primary selection scheme to obtain a final selection scheme.
Preferably, in S1, the specific content of obtaining the on-resistances of the SiC MOSFET and the IGBT according to the driving voltages of the SiC MOSFET and the IGBT in the hybrid device includes:
(1)
(2)
Wherein, Is the on-resistance of the IGBT,AndThe junction temperature, the on-resistance temperature influence factor, the reference driving voltage, the reference on-resistance and the driving voltage correction factor of the SiC MOSFET are respectively obtained,AndThe drive voltage correction factor is the junction temperature, the on-resistance temperature influence factor, the reference drive voltage, the reference on-resistance of the IGBT respectively.
Preferably, the on-resistance in S1 is determined by the SiC MOSFETObtaining inflection point currentAccording to the load currentAnd (3) withThe specific content of establishing the conduction loss model respectively comprises the following steps:
(3)
(4)
(5)
(6)
Wherein, Is the turn-on voltage of the IGBT,To provide a sub-load current through the SiC MOSFET,In order for the part-load current to flow through the IGBT,In order to achieve the on-loss of the hybrid device,Is the driving voltage of the SiC MOSFET,Is the driving voltage of the IGBT and,Is the on-resistance of the IGBT.
Preferably, the specific content of obtaining the hard turn-on loss and the hard turn-off loss of the SiC MOSFET and the IGBT inside the hybrid device according to the driving resistor and the driving voltage in S2 includes:
(7)
(8)
(9)
(10)
Wherein, Respectively a driving voltage, a reference driving voltage, a driving resistor, a reference driving resistor, an opening loss reference value and a junction temperature of the SiC MOSFET,Respectively driving voltage, reference driving voltage, turn-on loss reference value and junction temperature of the IGBT; Respectively load current, a load current reference value, bus voltage, a bus voltage reference value and a junction temperature reference value, AndIs the corresponding correction coefficient.
Preferably, the specific content of the switching loss model obtained in S2 according to the hard on loss, the hard off loss and the on voltage includes:
(11)
(12)
(13)
(14)
(15)
(16)
(17)
(18)
(19)
Wherein the method comprises the steps of As a result of the total switching loss,For the total on-loss,In order to be a total turn-off loss,Is the on-loss of the SiC MOSFET,Is the turn-off loss of the SiC MOSFET,For the turn-off loss of the IGBT,In order to turn on the conduction loss of the process,In order to turn on the loss of the turn-off process,AndThe rise time, the turn-on delay time, the turn-off time and the turn-off residual loss of the IGBT respectively,Is the on delay time of the SiC MOSFET,For the equivalent on-resistance of the hybrid device,And (3) withThe turn-on delay time and the turn-off delay time are respectively.
Preferably, the specific contents of the overshoot current model in S3 include:
(20)
Wherein, For the peak current to be the same,For the value of the overshoot current,In order to reverse the recovery of softness,AndThe transconductance, the turn-on threshold voltage, the driving resistance, the gate-source parasitic capacitance and the source parasitic inductance of the SiC MOSFET are respectively.
Preferably, the conditions for determining the pre-selected combination scheme of the hybrid device in S4 are:
Wherein, AndThe rated currents of SiC MOSFETs and IGBTs respectively,Is the rated current of the hybrid device.
Preferably, the content of the comprehensive performance comparison of the initial option in S6 includes: and (3) carrying out comprehensive performance comparison on the light load loss, the medium load loss, the heavy load loss, the maximum output current capacity, the overshoot peak current and the cost of the initial selection scheme.
Compared with the prior art, the invention discloses a Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters, which has the following beneficial effects:
1) The invention provides a hybrid device loss model and an overshoot current model which consider multi-regulation parameter coupling, and provides an effective path for hybrid device model selection and performance evaluation of different combination schemes;
2) The invention carries out model selection and performance evaluation on the hybrid device based on the established hybrid device loss and overshoot current model considering multi-regulation parameter coupling, and can effectively and rapidly screen out a hybrid device combination scheme meeting the transient steady-state reliability of the hybrid device;
3) Based on the built hybrid device loss and overshoot model considering the multi-regulation parameter coupling, the difference of the initial selection scheme of the hybrid device in the aspects of light load loss, medium load loss, rated loss, maximum output current, overshoot current, cost and the like can be compared, and theoretical guidance is provided for the selection of the combination scheme of the hybrid device under different application requirements.
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In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a hybrid device structure and a common switching sequence provided in an embodiment of the present invention; wherein, (a) is a block diagram; (b) a typical switching sequence;
FIG. 2 is a simplified waveform diagram of a transient switching process of a Si/SiC hybrid device according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for selecting Si/SiC hybrid devices and evaluating performance by considering multiple control parameters according to an embodiment of the present invention;
FIG. 4 is an equivalent circuit diagram of a Si/SiC hybrid device in a half-bridge structure provided by an embodiment of the present invention;
FIG. 5 is a schematic illustration of an experimental platform provided in an embodiment of the present invention; wherein, (a) a dual pulse test platform; (b) a steady state parameter measurement platform;
FIG. 6 is a graph of a hybrid V-I provided by an embodiment of the present invention;
fig. 7 is a schematic diagram of switching loss of a hybrid device according to an embodiment of the present invention;
FIG. 8 is a graph showing the overshoot peak current of a hybrid device according to an embodiment of the present invention;
FIG. 9 is a graph of overall performance versus radar provided by an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a method for selecting a Si/SiC hybrid device and evaluating performance by considering multiple regulation parameters, wherein the Si/SiC hybrid device is formed by connecting a high-power Si IGBT and a low-power SiC MOSFET in parallel, and the basic structure of the Si/SiC hybrid device is shown in a figure 1 (a). When the load current of the hybrid device is small, the load current of the hybrid device entirely flows through the SiC MOSFET having extremely low on-resistance due to the presence of the IGBT on-voltage. When the load current of the hybrid device is large, the load current is borne by the SiC MOSFET and the IGBT together, and the load current distribution relation inside the hybrid device is determined by the on-resistance of the SiC MOSFET and the IGBT. FIG. 1 (b) shows a typical switching pattern of a hybrid device, in whichAnd (3) withThe turn-on delay time and the turn-off delay time are respectively. According to the switching mode, the SiC MOSFET in the hybrid device is firstly switched on and then switched off to realize zero-voltage switching-on and zero-voltage switching-off of the IGBT, so that the advantages of low switching loss of the SiC MOSFET and low switching-on loss of the IGBT are combined, and the operation efficiency of the hybrid device is improved.
A simplified waveform diagram of a hybrid switching transient at a typical switching sequence is shown in fig. 2, where the total loss of the hybrid is composed of on loss, and off loss.
As shown in fig. 3, the method comprises the steps of:
S1, respectively obtaining the on-resistance of the SiC MOSFET and the IGBT according to the driving voltage of the SiC MOSFET and the IGBT in the hybrid device, and passing through the on-resistance of the SiC MOSFET Obtaining inflection point currentAccording to the load currentAnd (3) withRespectively establishing a conduction loss model according to the magnitude relation of the power supply voltage;
S2, obtaining hard switching loss and hard switching loss of an SiC MOSFET and an IGBT in the hybrid device according to the driving resistor and the driving voltage, and obtaining a switching loss model according to the hard switching loss, the hard switching loss and the switching voltage;
S3, reverse recovery of charge through SiC MOSFET body diode Obtaining an overshoot current valueWill be according toObtaining peak current of lower bridge arm hybrid deviceAs an overshoot current model;
S4, determining a preselected combination scheme of the hybrid device based on the power combination characteristic of a single device in the hybrid device; acquiring peak currents of each SiC MOSFET in a preselected combination scheme through an overshoot current model, taking the peak currents smaller than the maximum current value of a safety working domain as transient tolerance conditions, and determining a scheme meeting the transient tolerance conditions in the preselected combination scheme;
S5, based on a conduction loss model, obtaining sub-load currents flowing through the SiC MOSFET and the IGBT respectively under different load currents, taking the sub-load currents smaller than rated sub-load currents as dynamic shunt characteristic conditions of the hybrid device, and determining a scheme meeting the dynamic shunt characteristic conditions of the hybrid device in the scheme screened by the S4 to obtain a primary selection scheme;
s6, carrying out comprehensive performance comparison on the primary selection scheme to obtain a final selection scheme.
In order to further implement the above technical solution, in S1, the specific content of obtaining the on-resistances of the SiC MOSFET and the IGBT according to the driving voltages of the SiC MOSFET and the IGBT in the hybrid device includes:
the turn-on loss of a hybrid device is related to the load current and equivalent resistance that the internal device flows through. Wherein, the on-resistance of the SiC MOSFET And on-resistance of IGBTThe positive correlation with the driving voltage and the positive correlation with the junction temperature are linear, and the positive correlation is specifically shown as the following formula:
(1)
(2)
Wherein, Is the on-resistance of the IGBT,AndThe junction temperature, the on-resistance temperature influence factor, the reference driving voltage, the reference on-resistance and the driving voltage correction factor of the SiC MOSFET are respectively obtained,AndThe drive voltage correction factor is the junction temperature, the on-resistance temperature influence factor, the reference drive voltage, the reference on-resistance of the IGBT respectively.
In order to further implement the above technical scheme, the on-resistance of the S1 through the SiC MOSFETObtaining inflection point currentAccording to the load currentAnd (3) withThe specific content of establishing the conduction loss model respectively comprises the following steps:
when the load current of the Si/SiC mixed device is smaller, the conduction voltage drop of the Si/SiC mixed device is smaller than the starting voltage of the IGBT, the IGBT is not conducted, and all the load current only flows through the SiC MOSFET. When the load current is larger than the inflection point current, the load current is shared by the SiC MOSFET and the IGBT; thus, the conduction loss model of the Si/SiC hybrid device is expressed as:
(3)
(4)
(5)
(6)
Wherein, Is the turn-on voltage of the IGBT,To provide a sub-load current through the SiC MOSFET,In order for the part-load current to flow through the IGBT,In order to achieve the on-loss of the hybrid device,Is the driving voltage of the SiC MOSFET,Is the driving voltage of the IGBT and,Is the on-resistance of the IGBT.
In order to further implement the above technical solution, in S2, the specific content of obtaining the hard turn-on loss and the hard turn-off loss of the SiC MOSFET and the IGBT inside the hybrid device according to the driving resistor and the driving voltage includes:
The switching loss of the hybrid device consists of the switching loss of the SiC MOSFET, the switching loss of the IGBT and the additional conduction loss. Firstly, respectively calculating hard switching loss and hard switching loss of an SiC MOSFET and an IGBT in the hybrid device, wherein the driving voltage is inversely related to the hard switching loss, and the driving resistance is positively related to the hard switching loss, and the specific formula is as follows:
(7)
(8)
(9)
(10)
Wherein, Respectively a driving voltage, a reference driving voltage, a driving resistor, a reference driving resistor, an opening loss reference value and a junction temperature of the SiC MOSFET,Respectively driving voltage, reference driving voltage, turn-on loss reference value and junction temperature of the IGBT; Respectively load current, a load current reference value, bus voltage, a bus voltage reference value and a junction temperature reference value, AndIs the corresponding correction coefficient.
In order to further implement the above technical solution, in S2, the specific content of obtaining the switching loss model according to the hard on loss, the hard off loss and the on voltage includes:
When the hybrid device adopts a typical switch mode to operate, the SiC MOSFET is turned on before the IGBT and turned off after the IGBT, so that the IGBT realizes soft switching, and the turn-on loss of the IGBT is approximately zero. However, due to the existence of the IGBT conductivity modulation effect, the IGBT can form a tailing current generated by the recombination of residual carriers in the turn-off process, so that residual loss exists in the turn-off process of the IGBT. Thus, the total switching loss of the hybrid device is shown as follows:
(11)
(12)
(13)
(14)
(15)
(16)
(17)
(18)
(19)
Wherein the method comprises the steps of As a result of the total switching loss,For the total on-loss,In order to be a total turn-off loss,Is the on-loss of the SiC MOSFET,Is the turn-off loss of the SiC MOSFET,For the turn-off loss of the IGBT,In order to turn on the conduction loss of the process,In order to turn on the loss of the turn-off process,AndThe rise time, the turn-on delay time, the turn-off time and the turn-off residual loss of the IGBT respectively,Is the on delay time of the SiC MOSFET,For the equivalent on-resistance of the hybrid device,And (3) withThe turn-on delay time and the turn-off delay time are respectively.
In order to further implement the above technical solution, the specific contents of the overshoot current model in S3 include:
When the hybrid device operates in a typical switch mode, the load current of the hybrid device is all borne by the small-power device SiC MOSFET in the switching-on process, and the small-power device SiC MOSFET has the risk of excessive loss effect. Based on the above, the transient overcurrent capability of the SiC MOSFET needs to be evaluated, so that the type selection of the hybrid device is guided, and the transient reliability of the hybrid device is guaranteed. An equivalent circuit diagram of a Si/SiC hybrid device in a half bridge structure is shown in fig. 4.
When the mixed device of the lower bridge arm is turned on, reverse recovery current of the diode of the mixed device of the upper bridge arm can form a current peak in the process of turning on the mixed device of the lower bridge arm; the overshoot current model is as follows:
(20)
Wherein, For the peak current to be the same,For the value of the overshoot current,In order to reverse the recovery of softness,AndThe transconductance, the turn-on threshold voltage, the driving resistance, the gate-source parasitic capacitance and the source parasitic inductance of the SiC MOSFET are respectively.
In order to further implement the above technical solution, the conditions for determining the pre-selected combination scheme of the hybrid device in S4 are:
Wherein, AndThe rated currents of SiC MOSFETs and IGBTs respectively,Is the rated current of the hybrid device.
In order to further implement the above technical solution, the content of the comprehensive performance comparison of the initial option in S6 includes: and (3) carrying out comprehensive performance comparison on the light load loss, the medium load loss, the heavy load loss, the maximum output current capacity, the overshoot peak current and the cost of the initial selection scheme.
The invention will be further illustrated by the following examples:
In the embodiment, a double-pulse test experiment platform and a steady-state parameter measurement experiment platform are built to verify the loss model and the overshoot current model of the multi-parameter coupling, and a research object is a hybrid device composed of SiC MOSFET (C2M 0160120D, 1200V/12A) and IGBT (IGW 25N150H3, 1200V/25A). The built double-pulse test experimental platform is used for measuring the switching loss and the overshoot peak current of the hybrid device, and particularly as shown in fig. 5 (a), and related parameters are shown in table 1. The steady-state parameter measurement experiment platform constructed by the invention is used for measuring the conduction loss power of the hybrid device, and is particularly shown in fig. 5 (b).
Table 1 parameters related to the double pulse test platform
Based on the related data of the data manual of the SiC MOSFET (C2M 0160120D) and the IGBT (IGW 25N150H 3), a multi-parameter coupled hybrid device loss model and an overshoot current model can be obtained through fitting. When the driving voltage of the hybrid device is +15V/-5V and the driving resistance is 20Ω, the model calculation values and the actual measurement values of the experimental platform under different load currents are shown in fig. 6, fig. 7 and fig. 8.
From the above graph, the error between the calculated values based on the multi-regulation parameter coupling loss model and the overshoot current model and the measured value based on the experimental platform is smaller, and the trend along with the current change is basically consistent. Experimental data demonstrated the correctness and accuracy of the model built.
In the invention, the type selection of the hybrid device with the voltage of 1200V/25A is taken as an example, and firstly, the type selection of the internal device of the hybrid device is carried out. In order to avoid the difference of the electric heating characteristics of the power devices caused by the chip technology level of each manufacturer, manufacturers of the SiC MOSFETs in the mixed devices are uniformly selected as the same company, and manufacturers of the Si IGBTs in the mixed devices are uniformly selected as the same company. In addition, since the SiC MOSFET and the Si IGBT in the hybrid device are in a parallel structure, the rated voltage of the internal device is uniformly selected to be 1200V, and specific type selection parameters of the internal device are shown in table 2 below.
Table 2 internal device parameter table of hybrid device
When the hybrid device operates with a typical switching sequence, the SiC MOSFET inside the hybrid device is turned on and then off, i.e., the SiC MOSFET of the low power device assumes the full load current of the hybrid device switching process, and there is a risk of over-current failure. Therefore, the over-current capability of the hybrid device needs to be considered in advance in the process of selecting the hybrid device, and the operation reliability of the hybrid device is ensured. From the data manual of the SiC MOSFET device, the SiC MOSFETs of the types C3M0350120D and C2M0280120D have a maximum pulse current value of 20A, which is smaller than the rated load current value of 25A, and therefore, it is apparent that these two types of SiC MOSFETs cannot meet the requirements of the hybrid device combined to the rated current value of 25A. Based on the overshoot current model, the pulse current values of the SiC MOSFET of C2M0160120D and C3M0075120D are 28.8A and 26.3A respectively, which are smaller than the maximum pulse current values 40A and 80A of the C2M0160120D and the C3M0075120D, and the reliability of the hybrid device is ensured. Based on this, the device can be composed of 4 hybrid device options with power levels of 1200V/25A as shown in table 3.
Table 3 hybrid preselection table
The internal current distribution of the hybrid device is determined by the on-resistance of the SiC MOSFET and the IGBT. Therefore, in order to ensure the steady-state reliability of the hybrid device, the dynamic shunt characteristics of the SiC MOSFET and the IGBT in the hybrid device need to be analyzed, so that the situation that the self current of the SiC MOSFET and the IGBT in the hybrid device exceeds the rated current value of the hybrid device under the rated load current is avoided. The dynamic split values in the hybrid device of different combination schemes can be obtained based on the loss model at the junction temperature of 25 ℃, the driving voltage of +15V/-5V and the load current of 25A as shown in Table 4.
TABLE 4 internal current distribution for different combinations
As can be seen from table 4, each of the internal SiC MOSFETs and IGBTs did not exceed its own rated current value at a load current of 25A for HYS-1, HYS-2, and HYS-3. When the load current of HYS-4 is 25A, the current (17.82A) flowing through the IGBT exceeds the rated current value (15A) of the IGBT, and the IGBT has the risk of excessive loss effect. Therefore, to ensure the steady-state reliability of the hybrid device, the hybrid device final combination schemes are 3, namely HYS-1, HYS-2 and HYS-3. The total cost of the hybrid device for the 3 combination schemes is shown in table 5.
Table 5 hybrid primary options and cost
In order to compare the difference of the comprehensive performance of the hybrid device under the three combination schemes, the invention starts from 4 performance indexes such as loss, electric stress overshoot, maximum output current, cost and the like, and forms a comprehensive performance radar chart shown in figure 9 based on the built hybrid device loss model and overshoot current model. The loss is the total loss of the Buck converter when the three combined scheme down-mixing devices are applied to the Buck converter with the switching frequency of 20KHz and the duty ratio of 0.5; the overshoot peak current is uniformly selected from the overshoot peak current of the hybrid device when the load current is 25A.
As can be seen from fig. 9, when the load current is small (5A), the total loss of HyS-2 in the hybrid device of the three combination schemes is minimum, and the total loss of HyS-2 is reduced by 10.29% compared with that of HyS-1 having the maximum total loss. When the load current is 15A, the total loss of HyS-1 and HyS-3 is equivalent and is smaller than that of HyS-2. When the load current is 25A, the total loss of HyS-3 is minimum, and compared with the HyS-2 with the maximum total loss, the total loss of HyS-3 is reduced by 19.24%. Therefore, hyS-2 is most efficient in terms of efficiency at light loads, while HyS-3 is most efficient at medium and rated loads. In terms of maximum output current, hyS-3 has the strongest maximum output current capability, hyS-2 times, and HyS-1 is the weakest. Wherein, compared with the rated current value 25A, the maximum output currents of HyS-1, hyS-2 and HyS-3 are respectively increased by 14%, 45% and 92%. HyS-1 has the lowest cost, hyS-2 times, and HyS-3 the highest in terms of the total cost of the hybrid device. Compared to HyS-1, the cost of HyS-2 is only increased by 13%, while the cost of HyS-3 is increased by 40%. In terms of overshoot current, the hybrid devices of the three combination schemes overshoot peak currents substantially equal.
In summary, the hybrid device under the three combination schemes has advantages under different application requirements. HyS-1 has the lowest cost and moderate losses, but the weakest maximum output current capability of the device. The HyS-2 has the lowest loss under the light load working condition, and is suitable for improving the light load efficiency of the power electronic device; meanwhile, the cost is relatively low, and the maximum output current capacity of the device is high. HyS-3 has the lowest loss under medium and heavy load conditions and the strongest maximum output current capability of the hybrid device, but has the highest cost.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (6)
1. A method for selecting the type and evaluating the performance of a Si/SiC hybrid device by considering multiple regulation parameters is characterized by comprising the following steps:
S1, respectively obtaining the on-resistance of a SiC MOSFET and an IGBT according to the driving voltages of the SiC MOSFET and the IGBT in the hybrid device, obtaining inflection point current I th through the on-resistance R ds of the SiC MOSFET, and respectively establishing a conduction loss model according to the magnitude relation between load currents I L and I th;
S2, obtaining hard switching loss and hard switching loss of an SiC MOSFET and an IGBT in the hybrid device according to the driving resistor and the driving voltage, and obtaining a switching loss model according to the hard switching loss, the hard switching loss and the switching voltage;
In the S2, the specific contents of the hard turn-on loss and the hard turn-off loss of the SiC MOSFET and the IGBT in the hybrid device are obtained according to the driving resistor and the driving voltage, and the specific contents include:
Wherein, V GS、VGS_ref、Rg_MOS、Rg_MOS_ref、Eon_MOS_ref、Tj_MOS is the driving voltage, the reference driving voltage, the driving resistance, the reference value of the turn-on loss and the junction temperature of the SiCMOSFET respectively, and V GE、VGE_ref、Rg_IGBT、Rg_IGBT_ref、Eon_IGBT_ref、Tj_IGBT is the driving voltage, the reference value of the turn-on loss and the junction temperature of the IGBT respectively; i L、Iref、VDC、VDC_ref、Tj_ref is load current, load current reference value, bus voltage reference value and junction temperature reference values ,bGS_MOS、cI_MOS、dDC_MOS、bGE_IGBT、cI_IGBT、dDC_IGBT、Tcs_on_MOS、Tcs_on_IGBT、eGS_MOS、fI_MOS、gDC_MOS and e GE_IGBT、fI_IGBT、gDC_IGBT are corresponding correction coefficients respectively;
the specific content of the switching loss model obtained according to the hard switching loss, the hard switching loss and the on voltage in the S2 comprises the following steps:
Esw＝Eon+Eoff (11)
Eon＝Eon_MOS+Eon_con+Eon_IGBT (12)
Eon_MOS(VGS,Rg_MOS)＝Eon_hard_MOS(VGS,Rg_MOS) (13)
Eon_IGBT(VGE,Ton_delay)＝0 (15)
Eoff＝Eoff_MOS+Eoff_con+Eoff_IGBT (16)
Eoff_MOS(VGS,Rg_MOS)＝Eoff_hard_MOS(VGS,Rg_MOS) (17)
Eoff_IGBT(VGE,Toff_delay)＝Eres (19)
Wherein E sw is total switching loss, E on is total switching loss, E off is total switching loss, E on_MOS is switching loss of a SiCMOSFET, E off_MOS is switching loss of a SiCMOSFET, E off_IGBT is switching loss of an IGBT, E on_con is switching loss of a switching on process, E off_con is switching loss of a switching off process, T r_IGBT、td(on)_IGBT、toff_IGBT and E res are respectively rising time, switching on delay time, switching off time and switching off residual loss of the IGBT, T on_MOS is switching on delay time of the SiCMOSFET, R all is equivalent on resistance of a hybrid device, and T on_delay and T off_delay are respectively switching on delay time and switching off delay time;
S3, acquiring an overshoot current value I OS through reverse recovery charge Q rr of a SiCNOSFET body diode, and taking an expression of peak current I peak of a lower bridge arm hybrid device acquired according to I OS as an overshoot current model;
S4, determining a preselected combination scheme of the hybrid device based on the power combination characteristic of a single device in the hybrid device; obtaining peak currents of all SiCNOSFETs in a preselected combination scheme through an overshoot current model, taking the peak currents smaller than the maximum current value of a safe working domain as transient tolerance conditions, and determining a scheme meeting the transient tolerance conditions in the preselected combination scheme;
S5, based on a conduction loss model, obtaining sub-load currents flowing through the SiCNOSFET and the IGBT respectively under different load currents, taking the sub-load currents smaller than rated sub-load currents as dynamic shunt characteristic conditions of the hybrid device, and determining a scheme meeting the dynamic shunt characteristic conditions of the hybrid device in the scheme screened by the S4 to obtain a primary selection scheme;
s6, carrying out comprehensive performance comparison on the primary selection scheme to obtain a final selection scheme.
2. The method for evaluating the type and the performance of the Si/SiC hybrid device taking into consideration the multiple regulation parameters according to claim 1, wherein the specific content of obtaining the on-resistance of the SiCNOSFET and the IGBT according to the driving voltages of the SiCNOSFET and the IGBT in the hybrid device in S1 comprises the following steps:
Wherein R ce is the on-resistance of the IGBT, T j_MOS、KR_MOS、VGS_ref(25℃)、VGS、Rds_ref (25 ℃) and a are the junction temperature, the on-resistance temperature influencing factor, the reference driving voltage, the reference on-resistance and the driving voltage correcting factor of the SiCMOSFET respectively, and T j_IGBT、KR_IGBT、VGE_ref(25℃)、VGE、Rce_ref (25 ℃) and b are the junction temperature, the on-resistance temperature influencing factor, the reference driving voltage, the reference on-resistance and the driving voltage correcting factor of the IGBT respectively.
3. The method for selecting and evaluating the performance of the Si/SiC hybrid device by taking into consideration the multiple regulation parameters according to claim 1, wherein the step S1 of obtaining the inflection point current I th through the on-resistance R ds of the SiCNOSFET, and respectively establishing the on-loss model according to the magnitude relation between the load currents I L and I th comprises the following specific contents:
Wherein V th is the turn-on voltage of the IGBT, I MOS is the sub-load current flowing through the SiCMOSFET, I IGBT is the sub-load current flowing through the IGBT, P cond is the on-loss of the hybrid device, V GS is the drive voltage of the SiC MOSFET, V GE is the drive voltage of the IGBT, and R ce is the on-resistance of the IGBT.
4. The method for evaluating the type and the performance of the Si/SiC hybrid device taking into account the multiple regulation parameters according to claim 1, wherein the specific contents of the overshoot current model in S3 include:
Wherein, I peak is peak current, I OS is overshoot current, S is reverse recovery softness, g fs、VTH、Rg_MOS、CGS and L S are transconductance, turn-on threshold voltage, driving resistance, gate-source parasitic capacitance and source parasitic inductance of SiCNOSFET respectively.
5. The method for selecting and evaluating the performance of a Si/SiC hybrid device with consideration of multiple tuning parameters according to claim 1, wherein the conditions for determining the preselected combination scheme of the hybrid device in S4 are: i N_MOS<IN_IGBT and I N_MOS+IN_IGBT≥IN_ Mixing ; wherein, I N_MOS and I N_IGBT are rated currents of SiCNOSFET and IGBT respectively, and I N_ Mixing is the rated current of the hybrid device.
6. The method for evaluating the type and the performance of the Si/SiC hybrid device according to claim 1, wherein the step S6 of comparing the comprehensive performance of the primary option includes: and (3) carrying out comprehensive performance comparison on the light load loss, the medium load loss, the heavy load loss, the maximum output current capacity, the overshoot peak current and the cost of the initial selection scheme.
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