CN116745702A - 用于调节光学***、特别是用于微光刻的光学***的方法 - Google Patents
用于调节光学***、特别是用于微光刻的光学***的方法 Download PDFInfo
- Publication number
- CN116745702A CN116745702A CN202180092081.0A CN202180092081A CN116745702A CN 116745702 A CN116745702 A CN 116745702A CN 202180092081 A CN202180092081 A CN 202180092081A CN 116745702 A CN116745702 A CN 116745702A
- Authority
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- China
- Prior art keywords
- layer
- wavefront
- optical
- optical system
- optical element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 174
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000001393 microlithography Methods 0.000 title claims abstract description 17
- 230000009897 systematic effect Effects 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000010287 polarization Effects 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000012804 iterative process Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 230000008859 change Effects 0.000 description 15
- 238000005286 illumination Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 14
- 238000013461 design Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910017768 LaF 3 Inorganic materials 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/62—Optical apparatus specially adapted for adjusting optical elements during the assembly of optical systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102021201193.4A DE102021201193A1 (de) | 2021-02-09 | 2021-02-09 | Verfahren zur Justage eines optischen Systems, insbesondere für die Mikrolithographie |
| DE102021201193.4 | 2021-02-09 | ||
| PCT/EP2021/086614 WO2022171339A1 (de) | 2021-02-09 | 2021-12-17 | Verfahren zur justage eines optischen systems, insbesondere für die mikrolithographie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116745702A true CN116745702A (zh) | 2023-09-12 |
Family
ID=80112270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180092081.0A Pending CN116745702A (zh) | 2021-02-09 | 2021-12-17 | 用于调节光学***、特别是用于微光刻的光学***的方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024506056A (de) |
| CN (1) | CN116745702A (de) |
| DE (1) | DE102021201193A1 (de) |
| WO (1) | WO2022171339A1 (de) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533449A (en) | 1984-04-16 | 1985-08-06 | The Perkin-Elmer Corporation | Rapid surface figuring by selective deposition |
| WO1997033203A1 (en) * | 1996-03-07 | 1997-09-12 | Philips Electronics N.V. | Imaging system and apparatus for ultraviolet lithography |
| JP3924806B2 (ja) | 1996-06-10 | 2007-06-06 | 株式会社ニコン | 反射防止膜 |
| US7261957B2 (en) | 2000-03-31 | 2007-08-28 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
| US7629572B2 (en) | 2005-10-28 | 2009-12-08 | Carl Zeiss Laser Optics Gmbh | Optical devices and related systems and methods |
| EP2109134B1 (de) | 2007-01-25 | 2017-03-01 | Nikon Corporation | Optisches element, belichtungsvorrichtung mit dem optischen element und bauelementeherstellungsverfahren |
| DE102008041144A1 (de) * | 2007-08-21 | 2009-03-05 | Carl Zeiss Smt Ag | Optische Anordnung und optisches Abbildungssystem damit, Verfahren zu deren Optimierung und Verfahren zum Herstellen eines optischen Elements |
| DE102011083461A1 (de) | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel |
| DE102011054837A1 (de) | 2011-10-26 | 2013-05-02 | Carl Zeiss Laser Optics Gmbh | Optisches Element |
| DE102012212194B4 (de) | 2012-07-12 | 2017-11-09 | Carl Zeiss Smt Gmbh | Mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Veränderung einer optischen Wellenfront in einem katoptrischen Objektiv einer solchen Anlage |
| DE102012223669A1 (de) | 2012-12-19 | 2013-11-21 | Carl Zeiss Smt Gmbh | Wellenfrontkorrektur von beschichteten Spiegeln |
| DE102013212462A1 (de) * | 2013-06-27 | 2015-01-15 | Carl Zeiss Smt Gmbh | Oberflächenkorrektur von Spiegeln mit Entkopplungsbeschichtung |
| DE102014225197A1 (de) | 2014-12-09 | 2015-11-26 | Carl Zeiss Smt Gmbh | Verfahren zum Verändern einer Oberflächenform, reflektives optisches Element, Projektionsobjektiv und EUV-Lithographieanlage |
| DE102015207153A1 (de) * | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Wellenfrontkorrekturelement zur Verwendung in einem optischen System |
| DE102016200814A1 (de) | 2016-01-21 | 2017-07-27 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und optisches System für die EUV-Lithographie |
| NL2020103A (en) * | 2017-01-17 | 2018-07-23 | Asml Netherlands Bv | Lithographic Apparatus and Method |
| DE102018203241A1 (de) * | 2018-03-05 | 2019-09-05 | Carl Zeiss Smt Gmbh | Optisches Element, sowie Verfahren zur Korrektur der Wellenfrontwirkung eines optischen Elements |
-
2021
- 2021-02-09 DE DE102021201193.4A patent/DE102021201193A1/de not_active Ceased
- 2021-12-17 WO PCT/EP2021/086614 patent/WO2022171339A1/de active Application Filing
- 2021-12-17 JP JP2023547904A patent/JP2024506056A/ja active Pending
- 2021-12-17 CN CN202180092081.0A patent/CN116745702A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022171339A1 (de) | 2022-08-18 |
| JP2024506056A (ja) | 2024-02-08 |
| DE102021201193A1 (de) | 2022-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |