CN116631921A - Semiconductor process equipment and gas replacement method - Google Patents
Semiconductor process equipment and gas replacement method Download PDFInfo
- Publication number
- CN116631921A CN116631921A CN202310578011.7A CN202310578011A CN116631921A CN 116631921 A CN116631921 A CN 116631921A CN 202310578011 A CN202310578011 A CN 202310578011A CN 116631921 A CN116631921 A CN 116631921A
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- Prior art keywords
- gas
- wafer
- sealing plate
- cylinder
- window
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 179
- 238000007789 sealing Methods 0.000 claims abstract description 85
- 230000005540 biological transmission Effects 0.000 claims abstract description 53
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 238000012546 transfer Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 109
- 238000010586 diagram Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a semiconductor process manufacturing equipment and a gas replacement method, wherein the equipment comprises the following components: the front end face of the outer wall of the wafer transmission area is provided with a first window used for communicating the wafer box, the gas exchange area is used for preventing non-process gas in the wafer box from entering the wafer transmission area and placing the non-process gas in the wafer box out, and the non-process gas is fixed on the inner wall of the wafer transmission area; the gas exchange area stretches across the first window to form a second window on the outer wall of the gas exchange area, and the second window is positioned at the rear side of the first window; the outer wall of the gas exchange area is provided with a gas inlet for introducing inert gas and a gas outlet for introducing the inert gas; the front sealing plate is used for sealing the first window, and the rear sealing plate is used for sealing the second window and is positioned in the gas exchange area; cylinder one, cylinder two and cylinder three. The invention can prevent the non-process gas in the wafer box from entering the wafer transmission area and can replace the non-process gas in the wafer box.
Description
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to semiconductor process equipment and a gas replacement method.
Background
The vertical furnace heat treatment apparatus is an important process treatment apparatus in the semiconductor manufacturing process, and it is necessary to transport wafers in a wafer cassette into a wafer boat and send the wafer boat into a reaction tube. In the wafer transfer stage, the wafer cassette is in communication with the wafer transfer area, and most of the wafer cassette is air containing non-process gases such as oxygen, water vapor, etc., which diffuse into the wafer transfer area each time the wafer cassette is opened. When the process is completed, the boat exits the reaction tube and enters the wafer transfer area. These non-process gases will have an effect on the wafer, which is still in a high temperature state.
In the prior art, a threshold value is set, e.g. O 2 Concentration of O in wafer transfer region 2 When the concentration reaches a certain threshold value, a purging function is started, and a large amount of N is filled in 2 Replace the gas in the wafer transfer area, dilute O 2 Because of the large volume of the wafer transfer area and the large number of dead areas, this process often takes a long time and is difficult to achieve. When the set value is too low, frequent purging is caused, and the productivity is affected. When the set value is too high, O 2 The higher the concentration of non-process gases such as water vapor, the greater the impact on wafer processing.
There is a need for an apparatus that prevents non-process gases within a wafer cassette from entering a wafer transport area.
Disclosure of Invention
The invention aims to provide a semiconductor process processing device and a gas replacement method, which can prevent non-process gas in a wafer box from entering a wafer transmission area and replace the non-process gas in the wafer box. In order to achieve the above purpose, the invention adopts the following technical scheme:
a semiconductor processing apparatus, comprising:
the front end face of the outer wall of the wafer transmission area is provided with a first window for communicating with the wafer box,
the gas exchange area is used for preventing non-process gas in the wafer box from entering the wafer transmission area and placing the non-process gas in the wafer box out, and is fixed on the inner wall of the wafer transmission area; the gas exchange area spans the first window and forms a second window on the outer wall of the gas exchange area, and the second window is positioned at the rear side of the first window; the outer wall of the gas exchange area is provided with a gas exhaust port and a gas inlet port for introducing inert gas;
the front sealing plate is used for sealing the first window, and the rear sealing plate is used for sealing the second window and is positioned in the gas exchange area;
the first cylinder, the second cylinder and the third cylinder are used for moving the front sealing plate and the rear sealing plate and are both positioned in the gas exchange area, the cylinder body of the first cylinder is fixed on the front sealing plate, and the output shaft of the first cylinder is fixed on the rear sealing plate; the cylinder body of the third cylinder is fixed between the left wall and the right wall of the wafer transmission area; the sliding table of the third cylinder is fixed on the body of the second cylinder, and the output shaft of the second cylinder is fixed on the front sealing plate.
Preferably, the wafer transfer area is connected to a reaction tube.
Preferably, a gas concentration detection unit is disposed on the gas exhaust port.
Preferably, the gas exhaust port and the gas inlet port are respectively provided with an electromagnetic valve for controlling the opening and the closing of the gas exhaust port and the gas inlet port.
A gas replacement method for semiconductor processing equipment, comprising the steps of:
step 1, when a wafer box is loaded, the wafer box is communicated with a gas exchange area through a first window, a rear sealing plate is driven by a second cylinder to move from a third position to a fourth position, and is contacted with and sealed with a second window of the gas exchange area, at the moment, the wafer box is communicated with the gas exchange area, and the gas exchange area is isolated from a wafer transmission area through the rear sealing plate; in this state, non-process gases are present within the wafer cassette and the gas exchange area;
step 2, opening a gas inlet and a gas outlet, and introducing inert gas to the gas exchange area through the gas inlet so as to replace non-process gas; the replaced non-process gas is discharged from the gas outlet;
and 3, closing the gas inlet and the gas outlet after the non-process gas replacement in the wafer box and the gas exchange area is completed.
Preferably, the method further comprises:
step 4, driving the first cylinder, moving the relative positions of the front sealing plate and the rear sealing plate, and separating the rear sealing plate from contact with the second window of the gas exchange area;
step 5, carrying out a wafer transmission procedure: and driving a third air cylinder, wherein the third air cylinder drives a second air cylinder to move left and right through a sliding table, and the front sealing plate and the rear sealing plate move along with the second air cylinder and move from the first position to the second position together, so that the wafer box, the gas exchange area and the wafer transmission area are sequentially communicated, and the wafer is transmitted to the wafer transmission area from the inside of the wafer box through the gas exchange area.
Preferably, the method further comprises:
step 6, after the wafer transmission procedure is finished, driving a cylinder III, and moving the positions of a front sealing plate and a rear sealing plate from the position II to the position I;
step 7, driving a cylinder II, and moving the positions of the front sealing plate and the rear sealing plate from the position IV to the position III; at this time, the front sealing plate is in contact with the first window of the wafer transmission area and seals the first window, at this time, the gas exchange area is communicated with the wafer transmission area, and the gas exchange area and the wafer transmission area are isolated from the outside;
and 8, removing the wafer box.
Preferably, the method further comprises:
when the wafer box is not loaded, the front sealing plate is contacted with the first window of the wafer transmission area and seals the wafer transmission area, and the gas exchange area is communicated with the wafer transmission area through the second window.
Compared with the prior art, the invention has the advantages that: the non-process gas in the wafer box can be prevented from entering the wafer transmission area and can be replaced, and the method is concretely characterized by comprising the following steps:
(1) When the wafer box is loaded, the wafer box is communicated with the gas exchange area through the first window, the rear sealing plate is driven by the second cylinder to move from the third position to the fourth position, and is contacted with and sealed with the second window of the gas exchange area, at the moment, the wafer box is communicated with the gas exchange area, and the gas exchange area is isolated from the wafer transmission area through the rear sealing plate. At this time, the gas inlet and the gas outlet are opened, and inert gas is introduced into the gas exchange area through the gas inlet to replace non-process gas.
(2) After the replacement of the non-process gas in the wafer box and the gas exchange area is completed, driving a first cylinder, and moving the relative positions of a front sealing plate and a rear sealing plate, wherein the rear sealing plate is separated from contact with a second window of the gas exchange area; and then carrying out a wafer transmission procedure, wherein the wafer box, the gas exchange area and the wafer transmission area are communicated in sequence.
(3) After the wafer transmission process is finished, driving a cylinder III, moving the front sealing plate and the rear sealing plate from a position II to a position I, driving the cylinder II, moving the front sealing plate and the rear sealing plate from a position IV to a position III; at this time, the front sealing plate is in contact with and seals the first window of the wafer transmission area, and at this time, the gas exchange area is communicated with the wafer transmission area, and the gas exchange area and the wafer transmission area are isolated from the outside.
Drawings
Fig. 1 is a state diagram of an unloaded cassette.
Fig. 2 is a state diagram of loading a cassette and purging the cassette.
Fig. 3 is a wafer cassette loading and wafer transfer state diagram.
Fig. 4 is a state diagram of loading a wafer cassette and ending wafer transfer.
The device comprises a 1-wafer transmission area, a 2-gas exchange area, a 3-gas inlet, a 4-gas outlet, a 5-wafer box, a 6-front sealing plate, a 7-rear sealing plate, an 8-reaction tube, a 9-cylinder I, a 10-cylinder II and a 11-cylinder III.
Detailed Description
The semiconductor processing apparatus and gas replacement method of the present invention will be described in more detail with reference to the drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art may modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
As shown in fig. 1 to 4, a semiconductor process apparatus includes: wafer transfer area 1, gas exchange area 2, front shrouding 6, back shrouding 7, cylinder one 9, cylinder two 10 and cylinder three 11.
The front end surface of the outer wall of the wafer transmission area 1 is provided with a first window for communicating with the wafer box 5. The wafer transfer area 1 is connected to a reaction tube 8. Reaction tube 8 functions: and a film plating area on the surface of the wafer.
The gas exchange area 2 is an independent area in the wafer transmission area 1 and can be isolated from the outside through the front sealing plate 6 to be communicated with the wafer transmission area 1; or isolated from the wafer transfer area 1 by the rear seal plate 7 and communicated with the wafer box 5. The gas exchange area 2 is used to prevent non-process gases in the wafer cassette 5 from entering the wafer transfer area 1 and to displace non-process gases in the wafer cassette 5, which are secured to the inner walls of the wafer transfer area 1.
Specifically, the gas exchange region 2 serves as a buffer region to isolate the wafer cassette 5 from direct contact with the wafer transfer region 1, and non-process gases within the wafer cassette 5 will not enter the wafer transfer region 1. The gas exchange area 2 spans across the first window, and a second window is formed in the outer wall of the gas exchange area 2 and is positioned at the rear side of the first window.
The outer wall of the gas exchange area 2 is provided with a gas outlet 4 and a gas inlet 3 for introducing inert gas. The gas exhaust port 4 is provided with a gas concentration detection unit for detecting the concentration of the non-process gas in the gas exchange area 2.
The gas exhaust port 4 and the gas inlet port 3 are respectively provided with an electromagnetic valve for controlling the opening and the closing of the electromagnetic valves. The control unit opens and closes the gas outlet 4 (gas inlet 3) by opening and closing the solenoid valve.
The front sealing plate 6 and the back sealing plate 7, the front sealing plate 6 is used for sealing the first window, and the back sealing plate 7 is used for sealing the second window, and are all located in the gas exchange area 2.
The first cylinder 9, the second cylinder 10 and the third cylinder 11 are used for moving the front sealing plate 6 and the rear sealing plate 7 and are all positioned in the gas exchange area 2, the cylinder body of the first cylinder 9 is fixed on the front sealing plate 6, and the output shaft of the first cylinder is fixed on the rear sealing plate 7; the cylinder body of the third cylinder 11 is fixed between the left wall and the right wall of the wafer transmission area 1; the slipway of the third cylinder 11 is fixed on the body of the second cylinder 10, and the output shaft of the second cylinder 10 is fixed on the front sealing plate 6.
In this embodiment, the third cylinder 11 is a long-strip cylinder, and the model (product) is a rodless slide cylinder.
A gas replacement method for semiconductor process equipment comprises the following steps:
when the wafer cassette 5 is not loaded: as shown in fig. 1, the front sealing plate 6 contacts and seals the first window of the wafer transfer area 1, and the gas exchange area 2 communicates with the wafer transfer area 1 through the second window.
When the wafer cassette 5 is loaded:
step 1, as shown in fig. 2, the wafer box 5 is communicated with the gas exchange area 2 through a first window, the rear sealing plate 7 is driven by the cylinder two 10 to move from the third position to the fourth position, and is contacted with and sealed with a second window of the gas exchange area 2, at this time, the wafer box 5 is communicated with the gas exchange area 2, and the gas exchange area 2 is isolated from the wafer transmission area 1 through the rear sealing plate 7, in this state, the non-process gas in the wafer box 5 does not affect the wafer transmission area 1; in this state, non-process gases are present in the wafer cassette 5 and the gas exchange area 2.
Step 2, opening a gas inlet 3 and a gas outlet 4, and introducing inert gas into the gas exchange area 2 through the gas inlet 3 so as to replace non-process gas; the replaced non-process gas is discharged to the plant tail gas treatment end through the gas exhaust port 4.
Step 3, as shown in fig. 3, after the non-process gas replacement is completed in the wafer cassette 5 and the gas exchange area 2, the gas inlet 3 and the gas outlet 4 are closed. Specifically, the gas outlet 4 includes a gas concentration detecting function, and the gas inlet 3 is continuously opened until the gas concentration of the gas outlet 4 reaches a set value. The gas inlet 3 and the gas outlet 4 are closed. Under these conditions, the cassette 5 and the gas exchange zone 2 may be considered to be free of non-process gases, thereby reducing erosion of the wafers by the non-process gases within the cassette during transport of the cassette.
In step 4, as shown in fig. 3, the first cylinder 9 is driven, the front sealing plate 6 and the rear sealing plate 7 are moved relative to each other, and the rear sealing plate 7 is separated from contact with the second window of the gas exchange area 2.
Step 5, as shown in fig. 3, a wafer transfer process is performed: the third cylinder 11 is driven, the third cylinder 11 drives the second cylinder 10 to move left and right through the sliding table, the front sealing plate 6 and the rear sealing plate 7 move along with the second cylinder 10 and move from the first position to the second position together, at this time, the wafer box 5, the gas exchange area 2 and the wafer transmission area 1 are sequentially communicated, and then the wafer can be transmitted to the wafer transmission area 1 from the inside of the wafer box 5 through the gas exchange area 2.
And 6, as shown in fig. 4, after the wafer transmission process is finished, driving the third cylinder 11, and moving the positions of the front sealing plate 6 and the rear sealing plate 7 from the second position to the first position.
And 7, driving a second cylinder 10, and moving the positions of the front sealing plate 6 and the rear sealing plate 7 from the fourth position to the third position. At this time, the front sealing plate 6 contacts with and seals the first window of the wafer transfer area 1, and at this time, the gas exchange area 2 communicates with the wafer transfer area 1, and both the gas exchange area 2 and the wafer transfer area 1 are isolated from the outside.
And 8, removing the wafer box 5, and recovering to an initial state, as shown in fig. 1.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (8)
1. A semiconductor processing apparatus, comprising:
the front end face of the outer wall of the wafer transmission area is provided with a first window used for communicating with the wafer box;
the gas exchange area is used for preventing non-process gas in the wafer box from entering the wafer transmission area and placing the non-process gas in the wafer box out, and is fixed on the inner wall of the wafer transmission area; the gas exchange area spans the first window and forms a second window on the outer wall of the gas exchange area, and the second window is positioned at the rear side of the first window; the outer wall of the gas exchange area is provided with a gas exhaust port and a gas inlet port for introducing inert gas;
the front sealing plate is used for sealing the first window, and the rear sealing plate is used for sealing the second window and is positioned in the gas exchange area;
the first cylinder, the second cylinder and the third cylinder are used for moving the front sealing plate and the rear sealing plate and are both positioned in the gas exchange area, the cylinder body of the first cylinder is fixed on the front sealing plate, and the output shaft of the first cylinder is fixed on the rear sealing plate; the cylinder body of the third cylinder is fixed between the left wall and the right wall of the wafer transmission area; the sliding table of the third cylinder is fixed on the body of the second cylinder, and the output shaft of the second cylinder is fixed on the front sealing plate.
2. The semiconductor processing apparatus of claim 1, wherein the wafer transfer region is coupled to a reaction tube.
3. The semiconductor processing apparatus of claim 1, wherein a gas concentration detection unit is disposed on the gas exhaust port.
4. The semiconductor processing apparatus according to claim 1, wherein the gas exhaust port and the gas inlet port are respectively provided with a solenoid valve for controlling the opening and closing thereof.
5. A method for gas replacement in semiconductor processing equipment, comprising the steps of:
step 1, when a wafer box is loaded, the wafer box is communicated with a gas exchange area through a first window, a rear sealing plate is driven by a second cylinder to move from a third position to a fourth position, and is contacted with and sealed with a second window of the gas exchange area, at the moment, the wafer box is communicated with the gas exchange area, and the gas exchange area is isolated from a wafer transmission area through the rear sealing plate; in this state, non-process gases are present within the wafer cassette and the gas exchange area;
step 2, opening a gas inlet and a gas outlet, and introducing inert gas to the gas exchange area through the gas inlet so as to replace non-process gas; the replaced non-process gas is discharged from the gas outlet;
and 3, closing the gas inlet and the gas outlet after the non-process gas replacement in the wafer box and the gas exchange area is completed.
6. The method of claim 5, further comprising:
step 4, driving the first cylinder, moving the relative positions of the front sealing plate and the rear sealing plate, and separating the rear sealing plate from contact with the second window of the gas exchange area;
step 5, carrying out a wafer transmission procedure: and driving a third air cylinder, wherein the third air cylinder drives a second air cylinder to move left and right through a sliding table, and the front sealing plate and the rear sealing plate move along with the second air cylinder and move from the first position to the second position together, so that the wafer box, the gas exchange area and the wafer transmission area are sequentially communicated, and the wafer is transmitted to the wafer transmission area from the inside of the wafer box through the gas exchange area.
7. The method of claim 6, further comprising:
step 6, after the wafer transmission procedure is finished, driving a cylinder III, and moving the positions of a front sealing plate and a rear sealing plate from the position II to the position I;
step 7, driving a cylinder II, and moving the positions of the front sealing plate and the rear sealing plate from the position IV to the position III; at this time, the front sealing plate is in contact with the first window of the wafer transmission area and seals the first window, at this time, the gas exchange area is communicated with the wafer transmission area, and the gas exchange area and the wafer transmission area are isolated from the outside;
and 8, removing the wafer box.
8. The method of claim 5, further comprising:
when the wafer box is not loaded, the front sealing plate is contacted with the first window of the wafer transmission area and seals the wafer transmission area, and the gas exchange area is communicated with the wafer transmission area through the second window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310578011.7A CN116631921A (en) | 2023-05-22 | 2023-05-22 | Semiconductor process equipment and gas replacement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310578011.7A CN116631921A (en) | 2023-05-22 | 2023-05-22 | Semiconductor process equipment and gas replacement method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116631921A true CN116631921A (en) | 2023-08-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310578011.7A Pending CN116631921A (en) | 2023-05-22 | 2023-05-22 | Semiconductor process equipment and gas replacement method |
Country Status (1)
| Country | Link |
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| CN (1) | CN116631921A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196150A (en) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | Gate valve |
| US20090175709A1 (en) * | 2008-01-08 | 2009-07-09 | Tdk Corporation | Contained object transfer system |
| US20150345660A1 (en) * | 2014-05-29 | 2015-12-03 | Applied Materials, Inc. | Methods and apparatus to reduce shock in a slit valve door |
| TW201633437A (en) * | 2015-03-06 | 2016-09-16 | Sinfonia Technology Co Ltd | Door opening and closing apparatus |
| KR20220148661A (en) * | 2021-04-29 | 2022-11-07 | 주식회사 에스와이티 | Gate valve for semiconductor and flat panel display apparatus |
| CN115428136A (en) * | 2020-04-03 | 2022-12-02 | 应用材料公司 | Double gate and single actuator system |
-
2023
- 2023-05-22 CN CN202310578011.7A patent/CN116631921A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05196150A (en) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | Gate valve |
| US20090175709A1 (en) * | 2008-01-08 | 2009-07-09 | Tdk Corporation | Contained object transfer system |
| US20150345660A1 (en) * | 2014-05-29 | 2015-12-03 | Applied Materials, Inc. | Methods and apparatus to reduce shock in a slit valve door |
| TW201633437A (en) * | 2015-03-06 | 2016-09-16 | Sinfonia Technology Co Ltd | Door opening and closing apparatus |
| CN115428136A (en) * | 2020-04-03 | 2022-12-02 | 应用材料公司 | Double gate and single actuator system |
| KR20220148661A (en) * | 2021-04-29 | 2022-11-07 | 주식회사 에스와이티 | Gate valve for semiconductor and flat panel display apparatus |
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