CN116075942A - 探测基板和平板探测器 - Google Patents

探测基板和平板探测器 Download PDF

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Publication number
CN116075942A
CN116075942A CN202180002345.9A CN202180002345A CN116075942A CN 116075942 A CN116075942 A CN 116075942A CN 202180002345 A CN202180002345 A CN 202180002345A CN 116075942 A CN116075942 A CN 116075942A
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substrate
layer
orthographic projection
photoelectric conversion
electrode
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CN202180002345.9A
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占香蜜
王振宇
杨祎凡
丁志
侯学成
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • G—PHYSICS
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    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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    • H01L27/144—Devices controlled by radiation
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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Abstract

本公开提供了一种探测基板，其中，包括：衬底基板、位于衬底基板上呈阵列排布的多个探测像素单元，探测像素单元包括：薄膜晶体管和位于薄膜晶体管远离衬底基板一侧的光电转换部，光电转换部远离衬底基板的一侧设置有偏置电压线；薄膜晶体管包括：有源层、第一电极和第二电极，第一电极和第二电极均与有源层电连接，有源层包括沟道区；光电转换部靠近衬底基板的一端与第二电极电连接，光电转换部远离衬底基板的一端与对应的偏置电压线电连接；光电转换部与偏置电压线之间设置有至少一层介质层，介质层上形成有第一过孔，沟道区在衬底基板上的至少部分正投影位于第一过孔在衬底基板上的正投影以内。本公开还提供了一种平板探测器。

Description

PCT国内申请，说明书已公开。

Claims (34)

  1. PCT国内申请，权利要求书已公开。
CN202180002345.9A 2021-08-31 2021-08-31 探测基板和平板探测器 Pending CN116075942A (zh)

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PCT/CN2021/115488 WO2023028796A1 (zh) 2021-08-31 2021-08-31 探测基板和平板探测器

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CN116075942A true CN116075942A (zh) 2023-05-05

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US (1) US20240194705A1 (zh)
CN (1) CN116075942A (zh)
WO (1) WO2023028796A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102522578B1 (ko) * 2017-11-29 2023-04-14 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 어레이 기판과 이를 포함하는 디지털 엑스레이 검출기
KR102569741B1 (ko) * 2018-10-31 2023-08-22 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 이를 포함하는 디지털 엑스레이 검출기
CN111244119A (zh) * 2019-12-13 2020-06-05 京东方科技集团股份有限公司 一种探测基板、其制作方法及平板探测器

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US20240194705A1 (en) 2024-06-13

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