CN115612981A - Double-layer shielding component and film deposition machine table with same - Google Patents
Double-layer shielding component and film deposition machine table with same Download PDFInfo
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- CN115612981A CN115612981A CN202110805997.8A CN202110805997A CN115612981A CN 115612981 A CN115612981 A CN 115612981A CN 202110805997 A CN202110805997 A CN 202110805997A CN 115612981 A CN115612981 A CN 115612981A
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- 230000008021 deposition Effects 0.000 title claims abstract description 26
- 239000002355 dual-layer Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 18
- 238000013459 approach Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 23
- 238000000427 thin-film deposition Methods 0.000 description 15
- 239000013077 target material Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Abstract
The invention provides a film deposition machine with a double-layer shielding component, which mainly comprises a reaction cavity, a bearing disc and a double-layer shielding component, wherein part of the double-layer shielding component and the bearing disc are positioned in the reaction cavity. The double-layer shielding component comprises a first shielding plate, a first protection plate, a second shielding plate, a second protection plate and a driving device, wherein the driving device is connected with the first shielding plate and the second shielding plate and drives the first shielding plate and the second shielding plate to swing towards opposite directions. During the cleaning process, the driving device drives the first and second shielding plates to approach each other. The first and second protection plates are respectively arranged on the surfaces of the first and second shielding plates, wherein a space is arranged between the first and second protection plates and the first and second shielding plates, so that the first and second shielding plates can be prevented from high-temperature deformation, and the shielding effect is improved.
Description
Technical Field
The invention relates to a film deposition machine with a double-layer shielding component, which mainly shields a bearing disc through the double-layer shielding component so as to avoid polluting the bearing disc in the process of cleaning a processing chamber.
Background
Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment and are commonly used in integrated circuit, led, display, and other processes.
The deposition apparatus mainly includes a chamber and a wafer tray, wherein the wafer tray is located in the chamber and is used for carrying at least one wafer. For example, in physical vapor deposition, a target is disposed in the chamber, wherein the target faces the wafer on the wafer carrier. During physical vapor deposition, inert gas and/or reaction gas can be conveyed into the cavity, bias voltage is respectively applied to the target material and the wafer bearing disc, and the borne wafer is heated through the wafer bearing disc.
The inert gas in the cavity forms ionized inert gas under the action of the high-voltage electric field, and the ionized inert gas is attracted by bias voltage on the target material to bombard the target material. Target atoms or molecules sputtered from the target are attracted by the bias on the wafer carrier plate and deposit on the surface of the heated wafer to form a film on the surface of the wafer.
After a period of time, the inner surface of the chamber forms a deposition film, and thus the chamber needs to be periodically cleaned to prevent the deposition film from falling off during the process and further contaminating the wafer. Furthermore, oxides or other contaminants may also form on the surface of the target, and thus periodic cleaning of the target is also required. Generally, plasma ions are bombarded against the target in the chamber by a burn-in process to remove oxides or other contaminants from the surface of the target.
When the chamber and the target are cleaned, the wafer carrying tray and the wafer in the chamber need to be taken out, or the wafer carrying tray needs to be isolated, so that the wafer carrying tray and the wafer are prevented from being polluted in the cleaning process.
Disclosure of Invention
Generally, after a certain period of use, a thin film deposition tool typically needs to be cleaned to remove oxide or nitride from the thin film and the target deposited in the chamber. Particles generated during the cleaning process contaminate the carrier plate, thereby requiring isolation of the carrier plate from contaminants. The invention provides a double-layer shielding component and a film deposition machine table with the same. The surfaces of the two shielding plates facing the target are respectively provided with a protective plate, wherein the protective plates are used for protecting the shielding plates so as to prevent the shielding plates from being damaged by high temperature or high-temperature substances generated in the cleaning process.
The present invention provides a film deposition machine with a dual-layer shielding member, which mainly comprises a reaction chamber, a carrying plate and a dual-layer shielding member. The double-layer shielding component comprises a driving device, two shielding plates and two protecting plates, wherein the driving device is connected with the two shielding plates, and the protecting plates are arranged on the surfaces of the shielding plates facing the target.
When the reaction cavity is cleaned, the two driving devices respectively drive the two shielding plates to mutually approach in a swinging mode, and the two shielding plates shield the bearing plate in the accommodating space so as to prevent plasma used in the cleaning process or pollution generated in the cleaning process from contacting the bearing plate. When the deposition process is carried out, the two driving devices respectively drive the two shielding plates to be away from each other in a swinging mode, and the thin film deposition can be carried out on the substrate in the reaction cavity.
When the two shielding plates are operated in the shielding state, the two protection plates arranged on the shielding plates are also close to each other and are used for shielding the two shielding plates. In addition, a gap is arranged between the protection plate and the shielding plate, so that the shielding plate and high-temperature or high-temperature substances generated in the cleaning process can be effectively isolated, and the chance of thermal deformation of the shielding plate is reduced.
An objective of the present invention is to provide a thin film deposition apparatus having a dual-layer shielding member, wherein a first gap is formed between two shielding plates in a shielding state, and a second gap is formed between two protection plates disposed on the shielding plates. The first gap between the two shielding plates and the second gap between the two shielding plates are staggered, so that the shielding plates and the shielding plates operated in a shielding state can effectively block the target and the bearing disc, and pollutants generated in the cleaning process are prevented from contacting the bearing disc.
An objective of the present invention is to provide a film deposition machine with a dual-layer shielding member, wherein two shielding plates form a complete shielding member, so as to reduce the space required for accommodating the shielding plates. In an embodiment of the present invention, the two shielding plates can swing in opposite directions in the accommodating space of the reaction chamber, wherein the two shielding plates can operate in an open state or a shielding state in the accommodating space of the reaction chamber, so as to simplify the structure of the reaction chamber and reduce the volume of the reaction chamber. In addition, a shielding plate with larger thickness can be further used to prevent the shielding plate from generating high-temperature deformation when the film deposition machine is cleaned, and the effect of shielding the bearing disc by the shielding plate is favorably improved.
In order to achieve the above object, the present invention provides a thin film deposition apparatus having a dual-layer shielding member, comprising: a reaction cavity comprising a containing space; a bearing disc positioned in the containing space and used for bearing at least one substrate; and a double-layered shielding member including: a first shielding plate positioned in the accommodating space; the first protection plate is arranged on one surface of the first shielding plate; the second shielding plate is positioned in the accommodating space; the second protection plate is arranged on one surface of the second shielding plate; and the driving device is connected with the first shielding plate and the second shielding plate and respectively drives the first shielding plate and the second shielding plate to swing towards opposite directions so that the first shielding plate and the second shielding plate are switched between an opening state and a shielding state, wherein the first shielding plate and the second shielding plate in the shielding state are close to each other and are used for shielding the bearing disc, and the first protection plate and the second protection plate are also close to each other and are used for shielding the first shielding plate and the second shielding plate.
The invention provides a double-layer shielding component which is suitable for a film deposition machine, comprising: a first shielding plate; the first protection plate is arranged on one surface of the first shielding plate; a second shielding plate; the second protection plate is arranged on one surface of the second shielding plate; and the driving device is connected with the first shielding plate and the second shielding plate and respectively drives the first shielding plate and the second shielding plate to swing towards opposite directions so that the first shielding plate and the second shielding plate are switched between an opening state and a shielding state, wherein the first shielding plate and the second shielding plate in the shielding state are close to each other, and the first protection plate and the second protection plate are also close to each other and are used for shielding the first shielding plate and the second shielding plate.
The film deposition machine with the double-layer shielding component and the double-layer shielding component are characterized in that the driving device comprises a shaft sealing device and at least one driving motor, and the driving motor is connected with the first shielding plate and the second shielding plate through the shaft sealing device.
The film deposition machine station with the double-layer shielding component and the double-layer shielding component comprise a target material, a first shielding plate, a second shielding plate and a first protection plate, wherein the target material is positioned in the accommodating space of the reaction cavity and faces the bearing disc, the first shielding plate and the second shielding plate which are operated in a shielding state are positioned between the target material and the bearing disc, and the first protection plate and the second protection plate are positioned between the target material and the first shielding plate and the second shielding plate.
The film deposition machine with the double-layer shielding component and the double-layer shielding component are characterized in that a first gap is formed between the first shielding plate and the second shielding plate in a shielding state, a second gap is formed between the first protection plate and the second protection plate, and the first gap and the second gap are not overlapped.
The film deposition machine with the double-layer shielding component and the double-layer shielding component are characterized in that the area of the first protection plate is larger than that of the second protection plate, or the area of the first shielding plate is larger than that of the second shielding plate.
The film deposition machine with the double-layer shielding member comprises two sensing areas which are connected with a reaction cavity, the two sensing areas respectively comprise a sensing space and a fluid connection accommodating space, the thickness of the two sensing areas is smaller than that of the reaction cavity, and the two sensing areas are respectively provided with at least one position sensing unit for sensing a first shielding plate and a second shielding plate entering the sensing space.
The invention has the beneficial effects that: when the reaction cavity is cleaned, the driving device drives the first shielding plate and the second shielding plate to approach each other and switch to a shielding state to shield the bearing disc, so that the bearing disc is prevented from being polluted in the process of cleaning the film deposition machine.
Drawings
FIG. 1 is a schematic side cross-sectional view illustrating an embodiment of a thin film deposition apparatus with a dual-layer shielding member according to the present invention in a shielding state.
FIG. 2 is a schematic perspective view illustrating an embodiment of a dual-layer shielding member of a thin film deposition apparatus according to the present invention in an open state.
FIG. 3 is a schematic perspective view illustrating a dual-layer shielding member of a thin film deposition apparatus according to an embodiment of the present invention in a shielding state.
FIG. 4 is a schematic perspective view illustrating a dual-layer shielding member of a thin film deposition apparatus according to another embodiment of the present invention in an open state.
FIG. 5 is a schematic perspective view illustrating a dual-layer shielding member of a thin film deposition apparatus according to another embodiment of the present invention in a shielding state.
FIG. 6 is an enlarged cross-sectional view of a portion of an embodiment of a dual-layer shielding member according to the present invention in a shielding state.
Fig. 7 is an enlarged partial cross-sectional view of a double-layered shield member according to another embodiment of the present invention in a shield state.
Fig. 8 is a schematic perspective cross-sectional view of a driving device of a dual-layer shielding member according to an embodiment of the present invention.
FIG. 9 is a top view of an embodiment of a thin film deposition apparatus with a dual-layer shielding member according to the present invention in an open state.
FIG. 10 is a top view of an embodiment of a thin film deposition apparatus with a dual-layer shielding member according to the present invention in a shielding state.
FIG. 11 is a schematic top view of a thin film deposition apparatus with a dual-layer shielding member according to another embodiment of the present invention in an open state.
Description of the reference numerals: 10-a film deposition machine with a double-layer shielding component; 100-a two-layer shield member; 11-a reaction chamber; a 111-stop; 112-an opening; 113-a sensing region; 12-an accommodating space; 120-a sensing space; 121-cleaning the space; 13-a carrier tray; 141-first connecting arm; 143-a second linker arm; 15-a shield; 151-a first shield plate; 152-space; 153-a second shield plate; 154-a first gap; 161-target material; 163-substrate; 17-a drive device; 171-a drive motor; 173-a shaft seal device; 1731-outer body; 1732-space; 1733-a shaft body; 181-a first guard plate; 182-interval; 183-second protective plate; 184-a second gap; 185-a support unit; 19-position sensing unit.
Detailed Description
Fig. 1 is a schematic side cross-sectional view illustrating an embodiment of a film deposition machine with a dual-layer shielding member operating in a shielding state according to the present invention. As shown in the figure, the film deposition machine 10 with the double-layer shielding member mainly includes a reaction chamber 11, a carrying tray 13 and a double-layer shielding member 100, wherein the reaction chamber 11 includes an accommodating space 12 for accommodating the carrying tray 13 and a part of the double-layer shielding member 100.
The susceptor 13 is disposed in the accommodating space 12 of the reaction chamber 11 and is used for supporting at least one substrate 163. Taking the film deposition machine 10 with a double-layer shielding member as an example of a physical vapor deposition chamber, a target 161 is disposed in the accommodating space 12 of the reaction chamber 11, wherein the target 161 faces the susceptor 13. For example, the target 161 may be disposed above the reaction chamber 11 and face the susceptor 13 and/or the substrate 163 in the accommodating space 12.
Referring to fig. 2 and fig. 3, the dual-layer shielding member 100 includes a first shielding plate 151, a second shielding plate 153, a first protection plate 181, a second protection plate 183, and a driving device 17, wherein the first shielding plate 151, the second shielding plate 153, the first protection plate 181, and the second protection plate 183 are located in the accommodating space 12, and a portion of the driving device 17 is located in the accommodating space 12.
The driving device 17 is connected to the first shielding plate 151 and the second shielding plate 153, and drives the first shielding plate 151 and the second shielding plate 153 to swing in opposite directions, so that the first shielding plate 151 and the second shielding plate 153 are switched between an open state and a shielding state, for example, the first shielding plate 151 and the second shielding plate 153 swing synchronously with the driving device 17 as an axis.
In an embodiment of the present invention, the driving device 17 is connected to a first connecting arm 141 and a second connecting arm 143, and is connected to the first shielding plate 151 and the second shielding plate 153 through the first connecting arm 141 and the second connecting arm 143, respectively, wherein the driving device 17 drives the first and second shielding plates 151/153 and the first and second protecting plates 181/183 to swing or rotate in opposite directions through the first connecting arm 141 and the second connecting arm 143, respectively.
In an embodiment of the present invention, the first shielding plate 151, the second shielding plate 153, the first protecting plate 181 and the second protecting plate 183 may be plate bodies, such as semicircular or partially circular plate bodies. When the driving device 17 drives the first shielding plate 151 and the second shielding plate 153 to operate in the shielding state, the first shielding plate 151 and the second shielding plate 153 are close to each other to form a disc-shaped shielding member 15, wherein the shielding member 15 formed by the first shielding plate 151 and the second shielding plate 153 is located between the carrier tray 13 and the target 161 and is used for shielding the carrier tray 13 and/or the substrate 163.
Specifically, one surface (e.g., upper surface) of the first shield plate 151 and the second shield plate 153, which are operated in the shield state, faces the target 161, and the other surface (e.g., lower surface) faces the susceptor 13. The first protection plate 181 and the second protection plate 183 are respectively provided on surfaces (such as upper surfaces) of the first shielding plate 151 and the second shielding plate 153 facing the target 161, wherein the first and second protection plates 181/183 operating in the shielding state are located between the first and second shielding plates 151/153 and the target 161.
The first and second protection plates 181/183 are mainly used to isolate the high temperature or high temperature substance generated during cleaning the reaction chamber 11 and the target 161 from directly contacting the first and second shielding plates 151/153, so as to prevent the first and second shielding plates 151/153 from deforming at high temperature, thereby affecting the effect of shielding the carrier tray 13.
In addition, when the driving device 17 drives the first and second shielding plates 151/153 to approach each other and operates in the shielding state, the first and second shielding plates 181/183 also approach each other and operate in the shielding state to shield the first and second shielding plates 151/153.
The operation of the first and second shielding plates 151/153 in the shielding state or in the connection state according to the embodiment of the present invention can be defined as the first and second shielding plates 151/153 approaching each other until the distance between the two is smaller than a threshold, for example, smaller than 1mm. In addition, the distance between the first and second protection plates 181/183 operated in the shielding state can also be smaller than a threshold value. Specifically, the first and second shielding plates 151/153 do not directly contact each other, and the first and second protecting plates 181/183 do not directly contact each other, so as to prevent particles from being generated during the contact process and contaminating the accommodating space 12 of the reaction chamber 11 and/or the susceptor 13.
In an embodiment of the present invention, as shown in fig. 2, 3 and 6, the areas of the first and second shielding plates 151/153 are approximately the same, and the areas of the first and second protecting plates 181/183 are also approximately the same. The first and second protection plates 181/183 may be connected to the first and second shielding plates 151/153 by a plurality of supporting units 185, wherein a space 182 is formed between the first and second protection plates 181/183 and the first and second shielding plates 151/153. The space 182 can prevent heat from being conducted from the first and second protection plates 181/183 to the first and second shielding plates 151/153, so as to reduce the probability of thermal deformation of the first and second shielding plates 151/153.
When the first and second shielding plates 151/153 are operated in the shielding state, a first gap 154 is formed between the first and second shielding plates 151/153, and a second gap 184 is formed between the first and second protecting plates 181/183. In an embodiment of the present invention, as shown in fig. 3 and 6, the first gap 154 is approximately overlapped with the second gap 184, wherein the first and second shielding plates 151/153 and the first and second protecting plates 181/183 may be semicircular disks with similar areas.
In another embodiment of the present invention, as shown in fig. 5 and 7, the first gap 154 and the second gap 184 do not overlap with each other, wherein the areas of the first and second shielding plates 151/153 are approximately the same, and the areas of the first and second protecting plates 181/183 are different, for example, the area of the first protecting plate 181 is larger than that of the second protecting plate 183. In practical applications, the areas of the first and second protection plates 181/183 may be approximately the same, and the areas of the first and second shielding plates 151/153 are different, for example, the area of the first shielding plate 151 is larger than the area of the second shielding plate 153, so that the positions of the first gap 154 and the second gap 184 are staggered.
When the first gap 154 is not overlapped with the second gap 184, the heat or high temperature substance during cleaning can be prevented from passing through the second gap 184 and further transmitted to the carrier tray 13 through the first gap 154, so as to improve the shielding effect of the double-layer shielding member 100 on the carrier tray 13.
In an embodiment of the invention, the first shielding plate 151 and the second shielding plate 153 may be disposed at different heights, and the first protection plate 181 and the second protection plate 183 may also be disposed at different heights, for example, the first shielding plate 151 is higher than the second shielding plate 153, and the first protection plate 181 is higher than the second protection plate 183. When the first shielding plate 151 and the second shielding plate 153 are operated in the shielding state, a portion of the first shielding plate 151 overlaps a portion of the second shielding plate 153, and a portion of the first protecting plate 181 overlaps a portion of the second protecting plate 183, so as to further improve the shielding effect of the carrier tray 13.
The above-mentioned semicircular disc shapes of the first and second shielding plates 151/153 and the first and second protecting plates 181/183 are only an embodiment of the present invention, and the first and second shielding plates 151/153 and the first and second protecting plates 181/183 may have any geometric shapes in different embodiments.
In an embodiment of the present invention, as shown in fig. 8, the driving device 17 includes at least one driving motor 171 and a shaft sealing device 173, wherein the driving motor 171 is connected to the first shielding plate 151 and the second shielding plate 153 by the shaft sealing device 173. The driving motor 171 is located outside the accommodating space 12 of the reaction chamber 11, and the shaft sealing device 173 passes through and is disposed in the reaction chamber 11, wherein a part of the shaft sealing device 173 is located in the accommodating space 12 of the reaction chamber 11.
The shaft seal 173 includes an outer body 1731 and a shaft 1733. The outer tube 1731 includes a space 1732 for accommodating the shaft 1733, wherein the outer tube 1731 and the shaft 1733 are coaxially disposed, the outer tube 1731 is fixed on the reaction chamber 11, and the outer tube 1731 and the shaft 1733 can rotate relatively. The outer tube 1731 is connected to the first connecting arms 141, and is connected to the first shielding plate 151 via the first connecting arms 141 to drive the first shielding plate 151 to swing. The shaft 1733 is connected to the second connecting arm 143, and is connected to and drives the second shielding plate 153 to swing via the second connecting arm 143. The shaft sealing device 173 may be a common shaft sealing or magnetic fluid shaft sealing, and is mainly used to isolate the accommodating space 12 of the reaction chamber 11 from the external space, so as to maintain the vacuum of the accommodating space 12.
In an embodiment of the invention, as shown in fig. 8, the number of the driving motors 171 may be two, and the two driving motors 171 are respectively connected to the outer tube 1731 and the shaft 1733 of the sealing device 173 and respectively drive the outer tube 1731 and the shaft 1733 to synchronously rotate in opposite directions, so as to respectively drive the first shielding plate 151 and the second shielding plate 153 to swing in different directions through the outer tube 1731 and the shaft 1733.
In another embodiment of the present invention, the number of the driving motors 171 may be one, and the first shielding plate 151 and the second shielding plate 153 are connected and driven to synchronously swing in opposite directions through the outer tube 1731 and the shaft 1733, respectively, by a linkage mechanism. In the above embodiment of the present invention, a single driving device 17 is used as an illustration, but in practical applications, two driving devices 17 may be used and are respectively connected to and drive the first and second shielding plates 151/153.
Specifically, the film deposition apparatus 10 and/or the dual-layer shielding member 100 with the dual-layer shielding member can be operated in two states, i.e., an open state and a shielding state. As shown in fig. 2, 4, 9 and 11, the driving device 17 can drive the first and second shielding plates 151/153 and the first and second shielding plates 181/183 to swing in opposite directions, so that the first and second shielding plates 151/153 and the first and second shielding plates 181/183 are separated from each other and operated in an open state. A space 152 is formed between the first shielding plate 151 and the second shielding plate 153 in the opened state, so that the first and second shielding plates 151/153 and the first and second protective plates 181/183 do not exist between the target 161 and the susceptor 13 and the substrate 163, wherein the target 161 faces the susceptor 13 through the space 152.
In an embodiment of the invention, as shown in fig. 1, the accommodating space 12 of the reaction chamber 11 may be provided with a stopper 111, wherein one end of the stopper 111 is connected to the reaction chamber 11, and the other end of the stopper 111 forms an opening 112. When the carrier plate 13 approaches the target 161, it enters or contacts the opening 112 formed by the stopper 111. The reaction chamber 11, the carrier plate 13 and the stopper 111 separate a reaction space in the accommodating space 12, and deposit a thin film on the surface of the substrate 163 in the reaction space, thereby preventing the formation of a deposited thin film on the surfaces of the reaction chamber 11 and the carrier plate 13 outside the reaction space.
Further, as shown in fig. 3, 5 and 10, the driving device 17 may drive the first and second shielding plates 151/153 and the first and second protecting plates 181/183 to swing in opposite directions, so that the first shielding plate 151 and the second shielding plate 153 approach each other and form the shielding member 15.
The shielding member 15 can separate a cleaning space 121 in the accommodating space 12, wherein the cleaning space 121 is partially overlapped or close to the reaction space. A burn-in process may be performed in the cleaning space 121 to clean the target 161 and the reaction chamber 11 and/or the stopper 111 in the cleaning space 121, and remove oxide, nitride or other contaminants on the surface of the target 161 and the film deposited on the surface of the reaction chamber 11 and/or the stopper 111.
During the cleaning process of the thin film deposition apparatus 10 having the dual-layer shielding member, the carrier tray 13 and/or the substrate 163 are shielded or isolated by the shielding member 15, so as to prevent the substances generated during the cleaning process from contaminating or depositing on the surface of the carrier tray 13 and/or the substrate 163.
In an embodiment of the invention, as shown in fig. 9 and 10, the first shielding plate 151 and the second shielding plate 153 can be operated in the open state and the shielding state in the accommodating space 12 of the reaction chamber 11 without additionally providing one or more storage chambers for storing the shielding plates in the open state. For example, the volume of the reaction chamber 11 and/or the accommodating space 12 may be slightly larger than the original volume.
In an embodiment of the invention, a plurality of position sensing units 19 may be further disposed on the reaction chamber 11, for example, the position sensing units 19 may be light sensing units and are used to sense the positions of the first and second shielding plates 151/153 and/or the first and second protecting plates 181/183 to determine whether the first shielding plate 151 and the second shielding plate 153 are in an open state, so as to prevent the carrier tray 13, the first shielding plate 151, and the second shielding plate 153 from abnormal collision.
In addition, the position of the dual-layer shielding member 100 in the reaction chamber 11 can be adjusted according to the configuration of other mechanisms or moving lines on the thin film deposition machine 10 having the dual-layer shielding member. Taking the accommodating space 12 of the reaction chamber 11 as a cube as an example, as shown in fig. 9 and 10, the driving device 17 of the dual-layer shielding member 100 may be disposed at a side of the reaction chamber 11 and/or the accommodating space 12. As shown in fig. 11, the driving device 17 of the dual-layer shielding member 100 may also be disposed at a corner or a top corner of the reaction chamber 11 or the accommodating space 12, so as to facilitate disposing mechanisms such as a substrate feeding port and an exhaust pipeline at a side of the reaction chamber 11.
In an embodiment of the invention, the reaction chamber 11 may be connected to two sensing regions 113, wherein the sensing regions 113 protrude from a side surface of the reaction chamber 11, and the thickness of the sensing regions 113 is smaller than that of the reaction chamber 11. The two sensing regions 113 respectively include a sensing space 120, and the sensing space 120 of the sensing regions 113 is fluidly connected to the accommodating space 12 of the reaction chamber 11, wherein the thickness or height of the sensing space 120 is smaller than that of the accommodating space 12. When the first shielding plate 151 and the second shielding plate 153 are operated in an open state, a portion of the first shielding plate 151 and the second shielding plate 153 and a portion of the first shielding plate 181 and the second shielding plate 183 enter the two sensing spaces 120 fluidly connected to the accommodating space 12, respectively, wherein the area of the first shielding plate 151 and the area of the second shielding plate 153 located in the sensing spaces 120 are smaller than the area of the first shielding plate 151 and the second shielding plate 153 located in the accommodating space 12.
As shown in fig. 11, two sensing regions 113 are respectively disposed on two adjacent sides of the reaction chamber 11, and at least one position sensing unit 19 is respectively disposed on the two sensing regions 113 for sensing the first and second shielding plates 151/153 and/or the first and second protecting plates 181/183 entering the sensing space 120.
The invention has the advantages that:
when a reaction cavity is cleaned, the driving device drives the first shielding plate and the second shielding plate to be close to each other and is switched into a shielding state to shield the bearing disc, so that the bearing disc is prevented from being polluted in the process of cleaning the film deposition machine.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.
Claims (10)
1. A film deposition machine with a double-layer shielding component is characterized by comprising:
a reaction cavity comprising a containing space;
a bearing disc which is positioned in the containing space and is used for bearing at least one substrate; and
a two-layer shield member comprising:
a first shielding plate located in the accommodating space;
a first protection plate arranged on one surface of the first shielding plate;
a second shielding plate located in the accommodating space;
the second protection plate is arranged on one surface of the second shielding plate; and
and the driving device is connected with the first shielding plate and the second shielding plate and respectively drives the first shielding plate and the second shielding plate to swing towards opposite directions so as to switch the first shielding plate and the second shielding plate between an opening state and a shielding state, wherein the first shielding plate and the second shielding plate in the shielding state are close to each other and are used for shielding the bearing disc, and the first protection plate and the second protection plate are also close to each other and are used for shielding the first shielding plate and the second shielding plate.
2. The apparatus of claim 1, wherein the driving device comprises a shaft seal device and at least one driving motor, and the driving motor is connected to the first shielding plate and the second shielding plate via the shaft seal device.
3. The apparatus of claim 1, comprising a target disposed in the receiving space of the reaction chamber and facing the carrier plate, wherein the first shielding plate and the second shielding plate are disposed between the target and the carrier plate, and the first protection plate and the second protection plate are disposed between the target and the first shielding plate and the second shielding plate.
4. The apparatus of claim 1, wherein a first gap is formed between the first shielding plate and the second shielding plate in the shielding state, a second gap is formed between the first protection plate and the second protection plate, and the first gap and the second gap do not overlap.
5. The apparatus of claim 4, wherein the first protection plate has an area larger than the second protection plate, or the first protection plate has an area larger than the second protection plate.
6. The apparatus of claim 1, comprising two sensing regions connected to the reaction chamber, wherein the two sensing regions respectively comprise a sensing space in fluid connection with the accommodating space, and the two sensing regions have a thickness smaller than that of the reaction chamber, and at least one position sensing unit is disposed in each of the two sensing regions for sensing the first shielding plate and the second shielding plate entering the sensing space.
7. A double-layer shielding component is suitable for a film deposition machine, and is characterized by comprising:
a first shielding plate;
a first protection plate arranged on one surface of the first shielding plate;
a second shielding plate;
the second protection plate is arranged on one surface of the second shielding plate; and
and the driving device is connected with the first shielding plate and the second shielding plate and respectively drives the first shielding plate and the second shielding plate to swing towards opposite directions so as to switch the first shielding plate and the second shielding plate between an opening state and a shielding state, wherein the first shielding plate and the second shielding plate in the shielding state are close to each other, and the first protection plate and the second protection plate are also close to each other and are used for shielding the first shielding plate and the second shielding plate.
8. The dual-layer shielding member according to claim 7, wherein the driving device comprises a shaft sealing device and at least one driving motor, the driving motor connects the first shielding plate and the second shielding plate via the shaft sealing device.
9. The dual-layer shielding member as claimed in claim 7, wherein a first gap is formed between the first shielding plate and the second shielding plate in the shielding state, and a second gap is formed between the first protecting plate and the second protecting plate, the first gap and the second gap do not overlap.
10. The two-layer shield member according to claim 9, wherein the area of the first shield plate is larger than the area of the second shield plate, or the area of the first shield plate is larger than the area of the second shield plate.
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| CN202110805997.8A CN115612981A (en) | 2021-07-16 | 2021-07-16 | Double-layer shielding component and film deposition machine table with same |
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| CN202110805997.8A CN115612981A (en) | 2021-07-16 | 2021-07-16 | Double-layer shielding component and film deposition machine table with same |
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