CN115461852A - 用于在由半导体材料制成的衬底晶片上沉积外延层的方法和装置 - Google Patents
用于在由半导体材料制成的衬底晶片上沉积外延层的方法和装置 Download PDFInfo
- Publication number
- CN115461852A CN115461852A CN202180031440.1A CN202180031440A CN115461852A CN 115461852 A CN115461852 A CN 115461852A CN 202180031440 A CN202180031440 A CN 202180031440A CN 115461852 A CN115461852 A CN 115461852A
- Authority
- CN
- China
- Prior art keywords
- susceptor
- misalignment
- support shaft
- substrate wafer
- respect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 title claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 42
- 238000012544 monitoring process Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 description 40
- 239000000284 extract Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
一种用于在由半导体材料制成的衬底晶片上沉积外延层的方法和装置。该方法包括:在沉积设备中布置衬底晶片和基座,使得该衬底晶片搁置在该基座上并且该基座由支撑轴的臂保持;监测是否存在该基座关于其相对于围绕该基座的预热环位置的位置的未对准;监测是否存在该支撑轴关于其相对于该预热环位置的位置的未对准;如果出现该未对准中的至少一种,则消除相应的该未对准;以及在该衬底晶片上沉积该外延层。
Description
技术领域
本发明的主题是一种用于在由半导体材料制成的衬底晶片上沉积外延层的方法,以及用于实施该方法的装置。
背景技术
具有外延层的半导体晶片是这种方法的产物,是电子工业中特别苛刻的应用所必需的。因此,对于外延层的厚度均匀性和外延层中掺杂剂分布的均匀性的要求尤其具有挑战性。因此,有强烈的动机来创造生产条件,允许以高产量生产具有满足严格要求的外延层的半导体晶片。
在半导体晶片衬底上沉积外延层通常使用CVD(化学气相沉积)在可以接收衬底晶片的沉积设备中进行。在外延层的沉积期间,衬底晶片位于基座上,基座由支撑轴的支撑臂支撑并由支撑轴旋转,沉积气体被导向到衬底晶片的前表面、自由上表面上。沉积设备通常还具有预热环,该预热环设置在基座周围,并由间隙隔开。上圆顶和下圆顶限定反应室,在反应室内外延层被沉积在衬底晶片上。来自灯组的辐射热通过圆顶照射,以提供必要的沉积温度。具有这些特性的沉积设备是可商业上获得的。此外,如US2018 0 282 900 A1中所述,可提供将衬底晶片加载到沉积设备内并将其放置在基座上,或将放置有衬底晶片的基座加载到沉积设备内。
人们早就知道,衬底晶片相对于基座的位置的未对准会对产量产生不利影响。通常,衬底晶片应被居中地定位在基座上,以使衬底晶片与基座的圆周线形成同心圆。
JP2017-69 414 A描述了如何借助于摄像机***监控基座上的衬底晶片的位置,并且如果需要,水平地移动基座支撑轴以使衬底晶片在基座上居中。
US2009 0 314 205 A1涉及可以监控预热环的位置以及其他功能的观察***的细节。
US2016 0 125 589 A1描述了一种可用于探测未对准的方法。
本发明的发明人已经发现,由于颗粒的存在、由于外延层的不均匀厚度以及由于外延层中的不均匀掺杂剂分布,都可能发生产量损失,这不能归因于衬底晶片关于其相对于基座位置的位置未对准。
发明内容
本发明的目的是指出这种产量损失的原因并表明如何补救它们。
本发明的目的通过一种用于在半导体材料的衬底晶片上沉积外延层的方法来实现,该方法包括在沉积设备中布置衬底晶片和基座,使得衬底晶片搁置在基座上并且基座由支撑轴的臂保持;监测是否存在基座关于其相对于围绕基座的预热环位置的位置的未对准;监测是否存在支撑轴关于其相对于预热环位置的位置的未对准;如果出现未对准中的至少一种,则消除相应的未对准;以及在衬底晶片上沉积外延层。
本发明的目的另外通过一种用于在由半导体材料制成的衬底晶片上沉积外延层的装置来实现,包括:基座;预热环;带有基座支撑臂的支撑轴;摄像机***,用于监测基座与预热环之间的一部分间隙的宽度以及从摄像机***到基座的距离;图像处理设备,用于确定存在基座关于其相对于预热环位置的位置的未对准和/或存在支撑轴关于其相对于预热环位置的位置的未对准;驱动单元,用于移动和倾斜基座支撑轴;和控制设备,用于在未对准的情况下产生信号,其中该信号使驱动单元以纠正存在的未对准的方式移动。
发明人已经发现,所提到的产量损失可归因于关于基座的位置和/或关于其支撑轴的位置相对于预热环位置的位置存在未对准。在预热环与基座之间通常设有间隙,该间隙具有沿预热环的内周的相同宽度。预热环与基座被彼此同心设置,并且基座被水平设置。支撑轴沿通过预热环的中心的竖直轴线被对齐。
因此,如果基座关于支撑轴的支撑臂上的预热环偏心地定位,或者如果基座倾斜出支撑轴的支撑臂上的水平平面,则存在基座的未对准。如果支撑轴是竖直的,但未沿通过预热环的中心的竖直轴线对齐,或者因为支撑轴偏离出通过预热环的中心的竖直轴线,则存在支撑轴相对于预热环的位置的未对准。
如果基座接触预热环,就会产生颗粒,这些颗粒充当杂质,使所得的具有外延层的半导体晶片无法用于预期目的。如果预热环与基座之间的间隙的宽度由于上述未对准之一而沿预热环的内周变化,则也可以发生产量损失。然后,过程气体有可能在该间隙的不同点处被沿基座的下侧导向的吹扫气体稀释到不同程度,结果是外延层的厚度和外延层中掺杂剂的分布可沿衬底晶片的圆周方向变化。
上述未对准可以在沉积设备的冷态中已经存在,或者可以仅在沉积设备加热到工作温度的过程期间发生,并且可能在冷却到冷态的过程中再次消失,例如当冷却至室温时。
因此,建议监测是否存在至少一种未对准,并在必要时纠正该未对准。为此目的,原则上可以将沉积设备冷却到环境温度并且可以消除相应的未对准。
在可能的情况下,优选通过在沉积设备关闭的情况下移动支撑轴来进行。在其他情况下,打开沉积设备并纠正未对准的原因。例如,如果因为基座被水平定位在支撑轴的支撑臂上但关于预热环偏心,或者因为基座被与预热环同心地定位在支持轴的支撑手臂上,但倾斜出水平位置,所以基座未对准,则沉积设备被打开,基座被升起并按预期放置在支撑轴的支撑臂上。
在可以通过移动支撑轴来纠正未对准的情况下,沉积设备保持关闭并且不需要将沉积设备冷却至环境温度。如果沉积设备的反应室已经处于热状态,这是至少在450℃或更高的温度下的情况,当发生支撑轴的未对准时,优选地纠正未对准而不冷却沉积设备低于450℃的规定温度,特别优选不降低沉积设备中达到的温度。支撑轴的未对准可以通过移动支撑轴来纠正,如果未对准的原因是支撑轴是竖直的,但没有沿着通过预热环的中心的竖直轴线对齐,或者因为支撑轴从通过预热环的中心的竖直轴线倾斜。
基座和支撑轴关于它们相对于预热环位置的位置的布置借助于摄像机***来观察,该摄像机***捕获图像摘录,该图像摘录优选地在至少一个区域上径向延伸,该区域包围衬底晶片的圆周的一部分和预热环的内圆周的一部分。该图像摘录还包括基座与预热环之间的间隙的一部分。由摄像机***记录的图像摘录具有优选不小于12°的方位角宽度。图像处理设备根据特征对比度差异以及摄像机***优选到基座上表面的距离或该距离的变化来识别各部分的位置。在适当的情况下,例如,可以提供包括一个或多个LED灯的照明***以在沉积设备处于冷态时照亮反应室。在支撑轴的旋转期间,以固定的间隔记录和评估图像摘录。根据所述位置相对于彼此的时间变化以及根据所述距离的时间波动,图像处理设备确定是否存在基座和/或支撑轴的上述未对准。基于确定的结果,控制设备产生控制信号,以使驱动单元运动以移动和倾斜支撑轴,目的是通过移动支撑轴来消除存在的未对准。
例如,图像处理设备可以使用US2016 0 125 589 A1中描述的算法,或者优选地执行使用Sobel算子进行边缘探测的图像处理。
摄像机***包括至少一个摄像机,或优选地至少两个摄像机,其记录彼此具有90°方位角距离的两个图像摘录。有利的是,为了比较的目的,借助于图像处理设备存储来自评估的数据,这些数据是在沉积设备处于冷态并且不存在上述未对准时获得的。尤其有利的是,当支撑轴和基座按预期布置时,关于基座与预热环之间的间隙的宽度评估相应的图像摘录,并且存储间隙的宽度。
沉积设备的下圆顶和驱动单元优选地经由波纹管连接,以便在必要时可以在没有环境空气到达支撑轴的情况下能够启动支撑轴相对于静止的下圆顶的位移和/或倾斜移动。
为了抑制振动,优选将支撑臂的上端连接到所谓“基环”的外侧,以保持上圆顶和下圆顶的分开,并将该支撑臂的下端安装在驱动设备上,以移动和倾斜支撑轴。
用于移动和倾斜基座的支撑轴的驱动设备至少包括必要数量的致动器,以便能够在x方向上和在y方向上移动支撑轴并且使围绕平行于x方向的旋转轴线的和围绕平行于y方向的旋转轴线的支撑轴倾斜。因此,例如,提供了四个致动器,每个致动器引起一个移动。致动器优选地是压电致动元件。
如果在沉积设备处于加热状态时发生未对准,则通过移动支撑轴来纠正上述未对准,优选地在加热和关闭沉积设备时也是如此。
如果支撑轴实际上按预期竖直地对齐,但未沿通过预热环中心的竖直轴线对齐,并且如果基座按预期定位在支撑臂上,当基座围绕支撑轴旋转时将观察到摄像机***的图像摘录中的间隙宽度不同于预期的存储宽度,或者,如果摄像机***包括以90°的方位角距离布置的两个摄像机,观察到的间隙宽度是不同的。在该情况下,支撑轴关于其相对于预热环位置的位置存在未对准。通过将支撑轴水平地移动到沿通过预热环中心的竖直轴线的位置来纠正它。
如果支撑轴按预期沿着通过预热环中心的竖直轴线对齐,并且基座确实相对于预热环的位置同心地定位,但在支撑臂上倾斜出水平面,在基座围绕支撑轴的旋转期间,将观察到在摄像机的图像摘录中,从摄像机***到基座的距离在观察过程中呈正弦变化。通过将基座恢复到预期位置来纠正基座的该未对准。
如果基座实际上按预期定位在支撑臂上,但支撑轴偏离沿通过预热环中心的竖直轴线的预期对准,则也存在支撑轴关于其相对于预热环位置的位置的未对准。在该情况下,发现观察到的基座与预热环之间的间隙宽度与在支撑轴和基座按预期定位时观察和存储的间隙宽度不同。通过将支撑轴倾斜到沿通过预热环中心的竖直轴线的预期位置来纠正支撑轴的该未对准,使得观察到的间隙宽度对应于存储的间隙宽度。
例如,有时可以是这样的情况,即在沉积设备的冷状态下不存在未对准,即支撑轴按预期沿通过预热环中心的竖直轴线对准,并且基座相对于预热环的位置水平地且同心地定位在支撑臂上,并且支撑轴的未对准仅在加热沉积设备期间由于支撑轴倾斜出预期位置而发生。
无论衬底晶片是单独装入沉积设备还是与基座一起装入沉积设备,都可以应用本发明。优选地,根据本发明的方法被应用在封闭的沉积设备中并且是以至少450℃的操作温度。
基座在平面视图中具有圆形外周并且优选地具有凹部和放置表面,衬底晶片在其背面的边缘区域中搁置在放置表面上。衬底晶片优选以这样的方式放置在放置表面上,即在衬底晶片的背面与形成凹部的边界的基底之间存在距离。孔可以被结合在凹部的底部以利于掺杂剂从衬底晶片的背面输送到基座下面的反应室内。代替孔,基底可以由纤维材料制成,由于材料的多孔性,可以确保掺杂剂的输送。
衬底晶片优选由单晶硅组成,沉积在衬底晶片的正面上的外延层也是如此。衬底晶片的直径优选为至少200mm,特别优选为至少300mm。
本发明优选地还包括本领域技术人员已知的特征,以便确定和纠正衬底晶片关于其相对于基座位置的位置的未对准。
下面参考示范性实施例的附图来描述本发明。
附图说明
图1示出了具有根据本发明的特征的沉积设备的示范性实施例。
图2示出了对基座与预热环之间的间隙的观察。
附图标记列表
1 衬底晶片
2 基座
3 预热环
4 放置表面
5 间隙
6 图像摘录
7 摄像机***
8 图像处理设备
9 支撑轴
10 支撑臂
11 提升轴
12 驱动单元
13 致动器(x-方向)
14 致动器(y-方向)
15 致动器(倾斜角φ)
16 致动器(倾斜角θ)
17 上圆顶
18 下圆顶
19 灯组
20 沉积设备
21 控制设备
22 竖直轴线
23 背面
24 基底
25 波纹管
具体实施方式
图1中所示的沉积设备20的反应室从上方由上圆顶17界定,从下方由下圆顶18界定。支撑轴9伸入反应室的中心,具有从所述轴的上端处分叉的支撑臂10。支撑臂10支撑基座2,衬底晶片1在外延层的沉积期间搁置在基座2上。在所示实施例中,在沉积设备20的装载期间将衬底晶片1放置在提升轴11上,并通过降低提升轴11将其放置在基座上。沉积气体经由面向上圆顶17的衬底玻璃的正面被从进气口到出气口导向,进气口和出气口两者均位于沉积设备的侧壁上。预热环3被设置在沉积设备的侧壁与基座2之间。另外,可以为吹扫气体提供相应的进气口到出气口,吹扫气体被在基座下方并通过反应室、平行于其面向下的一侧被导向。箭头表示气流的流动方向。反应室由灯组19从外部加热,这些灯组通过上圆顶17和下圆顶18照射辐射能。
在基座2关于其相对于(围绕基座2的)预热环3位置的位置的预期布置中,在预热环3与基座2之间设置间隙5,该间隙5的宽度沿着基座的外周和预热环的内周是恒定的。通过基座2的中心的轴线和通过预热环3的中心的竖直轴线22重合。在支撑轴9关于其相对于预热环3位置的位置的预期布置中,沿基座2的外周和预热环的内周的间隙5具有恒定的宽度,并且当支撑轴旋转时,旋转的旋转轴线与竖直轴线22重合。
如果基座2水平定位在支撑臂10上但关于预热环偏心,或者如果基座2没有水平定位在支撑臂10上,即位于不垂直于竖直轴线22对齐的平面中,则存在基座2关于其相对于(围绕基座2的)预热环3位置的位置的未对准。那么,在第一种情况下,观察到的在基座2与预热环3之间的间隙5的宽度变化,在第二种情况下,从基座2到摄像机***7的距离发生变化(图2),当基座2借助于支撑轴9被旋转时,可以观察到间隙5的宽度。
如果因为支撑轴9被竖直定向、但未沿着通过预热环3的中心的竖直轴线22,观察到基座2与预热环3之间的间隙5的宽度变化,则存在支撑轴9关于其相对于(围绕支撑轴9的)预热环3位置的位置的未对准。如果因为支撑轴9倾斜出预期位置,即如果当基座2旋转时支撑轴9的旋转轴线和竖直轴线22未通过预热环3的中心平行设置,观察到间隙5的宽度与存储的间隙5的宽度相比已经变化,则也存在支撑轴9关于其相对于(围绕支撑轴9的)预热环3位置的位置的未对准。
图2中所示的摄像机***7包括用于在基座2借助于支撑轴9的旋转期间观察图像摘录6的摄像机。图像摘录6捕获了径向延伸的区域,该径向延伸的区域优选地包围衬底晶片1的外周的一部分、基座2的外周的一部分、预热环3的内周的一部分以及也由此基座2与预热环3之间的间隙5的一部分。衬底晶片1位于放置表面4上的基座2的凹部中,使得衬底晶片1的后侧23与基座2的基底24相距一距离。图像摘录6中包含的信息借助于图像处理设备8、特别是关于间隙5的宽度和从摄像机***7到基座2的距离来评估。控制设备21用于检查基座2和/或支撑轴9是否存在未对准,必要时,如果存在支撑轴9的未对准,则产生信号,该信号使驱动设备12(图1)运动,以纠正存在的支撑轴的未对准。如果存在基座的未对准,则必要时将沉积设备置于环境温度并打开,并纠正未对准。
驱动设备12具有能够移动或倾斜支撑轴9的特殊性能,当然这两者同时发生。驱动设备12的一个可能实施例在图1中示出。支撑轴9的移动由诸如压电致动器的致动器触发。为了使支撑轴9在水平面位移,设置致动器13(用于在x方向上的位移)和致动器14(用于在y方向上的位移),设置致动器16用于以倾斜角度φ来倾斜支撑轴9从图1的观察平面中围绕平行于x方向的旋转轴线,以及致动器15用于以倾斜角度θ来倾斜支撑轴9在图1的观察平面中围绕平行于y方向的旋转轴线。
沉积设备20的下圆顶18借助于波纹管25被连接到驱动设备12,以便使支撑轴9能够移动并密封由此产生的内部空间以防止环境大气的流入。
Claims (4)
1.一种用于在半导体材料的衬底晶片上沉积外延层的方法,其特征在于,该方法包括:在沉积设备中布置衬底晶片和基座,使得该衬底晶片搁置在该基座上并且该基座由支撑轴的臂保持;监测是否存在该基座关于其相对于围绕该基座的预热环位置的位置的未对准;监测是否存在该支撑轴关于其相对于该预热环位置的位置的未对准;如果出现该未对准中的至少一种,则消除相应的该未对准;以及在该衬底晶片上沉积该外延层。
2.根据权利要求1所述的方法,其特征在于,通过将该支撑轴移动到规定位置来纠正该支撑轴的未对准。
3.根据权利要求2所述的方法,其特征在于,该支撑轴在不小于450℃的温度下移动。
4.一种用于在由半导体材料制成的衬底晶片上沉积外延层的装置,其特征在于,该装置包括:基座;预热环;带有基座支撑臂的支撑轴;摄像机***,用于监测该基座与该预热环之间的一部分间隙的宽度以及从该摄像机***到该基座的距离;图像处理设备,用于确定存在该基座关于其相对于预热环位置的位置的未对准和/或存在该支撑轴关于其相对于预热环位置的位置的未对准;驱动单元,用于移动和倾斜基座支撑轴;和控制设备,用于在未对准的情况下产生信号,其中该信号使该驱动单元以纠正存在的该未对准的方式移动。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20171534.9 | 2020-04-27 | ||
EP20171534.9A EP3905311A1 (de) | 2020-04-27 | 2020-04-27 | Verfahren und vorrichtung zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial |
PCT/EP2021/059668 WO2021219381A1 (de) | 2020-04-27 | 2021-04-14 | Verfahren und vorrichtung zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115461852A true CN115461852A (zh) | 2022-12-09 |
Family
ID=70475962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202180031440.1A Pending CN115461852A (zh) | 2020-04-27 | 2021-04-14 | 用于在由半导体材料制成的衬底晶片上沉积外延层的方法和装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20230178398A1 (zh) |
EP (1) | EP3905311A1 (zh) |
JP (1) | JP7503652B2 (zh) |
KR (1) | KR20230005250A (zh) |
CN (1) | CN115461852A (zh) |
IL (1) | IL297558A (zh) |
TW (1) | TWI763425B (zh) |
WO (1) | WO2021219381A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4098782A1 (de) * | 2021-06-01 | 2022-12-07 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe aus halbleitermaterial in einer abscheidevorrichtung |
US20230143537A1 (en) * | 2021-11-11 | 2023-05-11 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor processing tool and method of operation |
KR102660602B1 (ko) * | 2024-02-08 | 2024-04-25 | (주)네오스테크놀로지스 | 다축 als의 실시간 수평보정 장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938845A (zh) * | 2004-03-26 | 2007-03-28 | 富士胶片株式会社 | 接合衬底的装置及方法 |
US20090314205A1 (en) * | 2008-06-23 | 2009-12-24 | Patalay Kailash K | Semiconductor process chamber vision and monitoring system |
US20120263875A1 (en) * | 2011-04-18 | 2012-10-18 | Siltronic Ag | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer |
US20130152859A1 (en) * | 2008-05-02 | 2013-06-20 | Applied Materials, Inc. | System and method for pedestal adjustment |
US20160010239A1 (en) * | 2014-07-11 | 2016-01-14 | Applied Materials, Inc. | Apparatus and methods for alignment of a susceptor |
CN105765113A (zh) * | 2013-11-25 | 2016-07-13 | Lg矽得荣株式会社 | 外延晶片生长装置 |
EP3082155A1 (en) * | 2015-04-14 | 2016-10-19 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
KR101868907B1 (ko) * | 2017-03-15 | 2018-07-20 | (주)에스에스피 | 경사 및 높이 조절이 가능한 웨이퍼 스테이지 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197117B1 (en) | 1997-07-23 | 2001-03-06 | Applied Materials, Inc. | Wafer out-of-pocket detector and susceptor leveling tool |
JP2003133397A (ja) | 2001-10-26 | 2003-05-09 | Komatsu Electronic Metals Co Ltd | 半導体ウェハ製造装置の回転式サセプタ支持機構 |
JP5464068B2 (ja) | 2010-06-14 | 2014-04-09 | 株式会社Sumco | エピタキシャル成長装置における内部部材の位置調整方法 |
JP5535347B1 (ja) * | 2013-02-04 | 2014-07-02 | エピクルー株式会社 | 撮像装置、半導体製造装置および半導体製造方法 |
US10196741B2 (en) * | 2014-06-27 | 2019-02-05 | Applied Materials, Inc. | Wafer placement and gap control optimization through in situ feedback |
US9959610B2 (en) | 2014-10-30 | 2018-05-01 | Applied Materials, Inc. | System and method to detect substrate and/or substrate support misalignment using imaging |
KR20180006496A (ko) | 2015-06-05 | 2018-01-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 서셉터 포지션 및 회전 장치, 및 사용 방법들 |
JP6432742B2 (ja) | 2015-09-30 | 2018-12-05 | 信越半導体株式会社 | エピタキシャル成長装置及びエピタキシャルウェーハの製造方法 |
DE102015223807A1 (de) | 2015-12-01 | 2017-06-01 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht in einer Abscheidekammer, Vorrichtung zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht und Halbleiterscheibe mit epitaktischer Schicht |
KR102546322B1 (ko) * | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
-
2020
- 2020-04-27 EP EP20171534.9A patent/EP3905311A1/de active Pending
-
2021
- 2021-04-14 TW TW110113361A patent/TWI763425B/zh active
- 2021-04-14 JP JP2022565687A patent/JP7503652B2/ja active Active
- 2021-04-14 IL IL297558A patent/IL297558A/en unknown
- 2021-04-14 CN CN202180031440.1A patent/CN115461852A/zh active Pending
- 2021-04-14 WO PCT/EP2021/059668 patent/WO2021219381A1/de active Application Filing
- 2021-04-14 US US17/920,211 patent/US20230178398A1/en active Pending
- 2021-04-14 KR KR1020227040717A patent/KR20230005250A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938845A (zh) * | 2004-03-26 | 2007-03-28 | 富士胶片株式会社 | 接合衬底的装置及方法 |
US20130152859A1 (en) * | 2008-05-02 | 2013-06-20 | Applied Materials, Inc. | System and method for pedestal adjustment |
US20090314205A1 (en) * | 2008-06-23 | 2009-12-24 | Patalay Kailash K | Semiconductor process chamber vision and monitoring system |
US20120263875A1 (en) * | 2011-04-18 | 2012-10-18 | Siltronic Ag | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer |
CN105765113A (zh) * | 2013-11-25 | 2016-07-13 | Lg矽得荣株式会社 | 外延晶片生长装置 |
US20160010239A1 (en) * | 2014-07-11 | 2016-01-14 | Applied Materials, Inc. | Apparatus and methods for alignment of a susceptor |
EP3082155A1 (en) * | 2015-04-14 | 2016-10-19 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
KR101868907B1 (ko) * | 2017-03-15 | 2018-07-20 | (주)에스에스피 | 경사 및 높이 조절이 가능한 웨이퍼 스테이지 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20230178398A1 (en) | 2023-06-08 |
WO2021219381A1 (de) | 2021-11-04 |
TW202140850A (zh) | 2021-11-01 |
JP2023528172A (ja) | 2023-07-04 |
KR20230005250A (ko) | 2023-01-09 |
IL297558A (en) | 2022-12-01 |
TWI763425B (zh) | 2022-05-01 |
EP3905311A1 (de) | 2021-11-03 |
JP7503652B2 (ja) | 2024-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN115461852A (zh) | 用于在由半导体材料制成的衬底晶片上沉积外延层的方法和装置 | |
US11859307B2 (en) | Apparatus and methods for alignment of a susceptor | |
US11133210B2 (en) | Dual temperature heater | |
US7527694B2 (en) | Substrate gripping apparatus | |
US20070148607A1 (en) | Vertical boat and vertical heat processing apparatus for semiconductor process | |
CN106463450B (zh) | 在epi腔室中的基板热控制 | |
JP2016519418A (ja) | 効率的な熱サイクリングのためのモジュール式基板ヒータ | |
JP2021012944A (ja) | 基板処理装置及び基板の受け渡し方法 | |
KR101977376B1 (ko) | 증착 장치 | |
US20090191042A1 (en) | Semiconductor device manufacturing apparatus and wafer loading/unloading method thereof | |
US20240035162A1 (en) | System and method for auto correction of substrate misalignment | |
TWI792577B (zh) | 在半導體材料的基板晶圓上沉積磊晶層的方法和設備 | |
CN117396641A (zh) | 用于在沉积设备中在由半导体材料制成的衬底晶圆上沉积外延层的方法 | |
US20170029976A1 (en) | Batch processing chamber | |
TW202331799A (zh) | 用於對矽片進行背封的方法和設備 | |
KR20230156221A (ko) | 기판처리방법, 기판처리장치 및 그를 가지는 기판처리시스템 | |
WO2024091304A1 (en) | Detection and analysis of substrate support and pre-heat ring in a process chamber via imaging | |
EP4214743A1 (en) | In-situ temperature mapping for epi chamber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |