CN115360270A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN115360270A CN115360270A CN202211278700.8A CN202211278700A CN115360270A CN 115360270 A CN115360270 A CN 115360270A CN 202211278700 A CN202211278700 A CN 202211278700A CN 115360270 A CN115360270 A CN 115360270A
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- 238000002360 preparation method Methods 0.000 title abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 162
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 161
- 239000010703 silicon Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000002347 injection Methods 0.000 claims abstract description 11
- 239000007924 injection Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 61
- 238000002161 passivation Methods 0.000 claims description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000004381 surface treatment Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 179
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 19
- 239000010409 thin film Substances 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000005543 nano-size silicon particle Substances 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Abstract
The application provides a solar cell and a preparation method of the solar cell. The first aspect of the present application provides a method for manufacturing a solar cell, including: depositing a transparent conductive film on the front surface and the back surface of the first prefabricated slice to obtain a second prefabricated slice, wherein the first prefabricated slice comprises a silicon substrate, a first silicon-containing film layer arranged on the front surface of the silicon substrate and a second silicon-containing film layer arranged on the back surface of the silicon substrate; cutting the second preform segment to slice the second preform segment and obtain a plurality of third preform segments having cut surfaces; metallizing the third preform to obtain a fourth preform having a metal electrode; and (5) performing light injection annealing on the fourth prefabricated sheet to obtain the solar cell. The solar cell efficiency is further improved, and the manufacturing cost of the cell is low.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a solar cell and a preparation method of the solar cell.
Background
In a general solar cell manufacturing method, slicing of a cell piece is realized by a slicing technique. However, the general preparation method including the slicing step is easy to cause the efficiency reduction of the cell, and further causes the loss of the external output power of the half-cell assembly including the half-cell, and the preparation cost is high.
Therefore, a new solar cell and a method for manufacturing the solar cell are needed.
Disclosure of Invention
A first aspect of an embodiment of the present application provides a method for manufacturing a solar cell, including:
depositing a transparent conductive film on the front surface and the back surface of the first prefabricated piece to obtain a second prefabricated piece, wherein the first prefabricated piece comprises a silicon substrate, a first silicon-containing film layer arranged on the front surface of the silicon substrate and a second silicon-containing film layer arranged on the back surface of the silicon substrate;
cutting the second preform segment to slice the second preform segment and obtain a plurality of third preform segments having cut surfaces;
metallizing the third preform to obtain a fourth preform having a metal electrode;
and (5) performing light injection annealing on the fourth prefabricated sheet to obtain the solar cell.
According to the preparation method of the solar cell provided by the first aspect of the embodiment of the application, the slicing step is arranged after the step of depositing the transparent conductive film, so that at least one edge of the transparent conductive film of the finally obtained solar cell has no distance from the edge, the problems of poor current collection effect and low cell efficiency are avoided, and the efficiency of the solar cell is favorably improved. And the slicing step is arranged before the light injection annealing step, so that the amplitude of reduction of the cell efficiency caused by the slicing step after light injection can be effectively controlled, and the higher cell efficiency of the solar cell is ensured. In the preparation method provided by the first aspect of the application, the slicing step is arranged in the middle of the whole manufacturing process, so that the equipment input end cost is reduced, the fragment rate is low, and the whole battery manufacturing cost is low.
In some alternative embodiments of the first aspect of the present application, in the step of depositing the transparent conductive film onto the front and back surfaces of the first preform sheet,
the front transparent conductive film of the second prefabricated piece covers the front of the silicon substrate, the back transparent conductive film of the second prefabricated piece covers the back of the silicon substrate, and a distance D exists between the edge of the back transparent conductive film of the second prefabricated piece and the edge of the back of the silicon substrate;
the distance D from the edge ranges from 0.001mm to 1.0mm.
In some optional embodiments of the first aspect of the present application, the preparation method further comprises:
and depositing a passivation film to the cutting surface of the third prefabricated section.
In some alternative embodiments of the first aspect of the present application, the method of preparation comprises:
the step of depositing a passivation film onto the cut face of the third preform sheet precedes the step of metallizing the third preform sheet.
In some optional embodiments of the first aspect of the present application, the manufacturing method further includes, between the step of separating the second preform sheet and the step of depositing a passivation film onto the cut surface of the third preform sheet:
and cleaning the cut surface to remove oxides and attachments on the cut surface, wherein at least one of hydrofluoric acid solution, alkali solution and plasma is adopted to clean the cut surface in the step of cleaning the cut surface.
In some alternative embodiments of the first aspect of the present application, the method of preparation comprises:
the step of depositing a passivation film onto the cut faces of the third pre-form is between the step of metallizing the third pre-form and the step of light implant annealing the fourth pre-form.
In some optional embodiments of the first aspect of the present application, in the step of depositing the passivation film onto the cut face of the third preform sheet,
the passivation film is of a single-layer structure, and the material of the passivation film is selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON, polysilicon, amorphous silicon, micron silicon, and SiC; alternatively, the first and second electrodes may be,
the passivation film has a laminated structure formed by laminating a plurality of sub-film layers, each sub-film layerIs selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON, polysilicon, amorphous silicon, micron silicon, and SiC;
the thickness of the passive film ranges from 1nm to 300nm.
In some optional embodiments of the first aspect of the present application, the preparation method further comprises:
performing silicon substrate surface treatment to obtain an optimized silicon substrate, wherein the silicon substrate surface treatment comprises double-sided texturing treatment on the front side and the back side of the silicon substrate to form a textured structure;
and depositing a first silicon-containing film layer on the front surface of the optimized silicon substrate, and depositing a second silicon-containing film layer on the back surface of the optimized silicon substrate to obtain a first prefabricated sheet.
In some optional embodiments of the first aspect of the present application, the silicon substrate surface treatment further comprises at least one of a rounding treatment of the textured structure and a silicon substrate back surface treatment, wherein the silicon substrate back surface treatment is a polishing treatment of the silicon substrate back surface or a wet etching treatment of the silicon substrate back surface.
In a second aspect, the present application provides a solar cell, which is prepared by the method for preparing the solar cell of the first aspect. The solar cell provided by the second aspect of the present application has a high power generation efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flow chart of an embodiment of a method for manufacturing a solar cell provided in the first aspect of the present application;
fig. 2 is a flow chart of another embodiment of a method for manufacturing a solar cell provided in the first aspect of the present application;
fig. 3 is a schematic operation diagram illustrating steps S10 to S20 in an embodiment of a method for manufacturing a solar cell provided by the first aspect of the present application;
fig. 4 is a schematic structural view of a cell preform with a passivation film deposited on a cut surface according to still another embodiment of the method for manufacturing a solar cell provided in the first aspect of the present application;
FIG. 5 is a flow chart of yet another embodiment of a method of fabricating a solar cell provided in the first aspect of the present application;
FIG. 6 is a flow chart of a portion of a further embodiment of a method for fabricating a solar cell provided in the first aspect of the present application;
fig. 7 is a flowchart of a further embodiment of a method for manufacturing a solar cell provided in the first aspect of the present application;
fig. 8 is a flowchart of a further embodiment of a method for manufacturing a solar cell provided in the first aspect of the present application;
fig. 9 is a flowchart of a further embodiment of a method for manufacturing a solar cell according to the first aspect of the present application.
Description of reference numerals:
a silicon substrate-1; a first silicon-containing film layer-2; a first intrinsic silicon thin film-21; a first doped silicon-containing film-22; a front transparent conductive film-3; a second silicon-containing film layer-4; a second intrinsic silicon thin film-41; a second doped silicon-containing film-42; a back transparent conductive film-5; a passivation film-6;
cutting plane-S.
Detailed Description
The technical solution of the present application will be described in detail below with reference to the accompanying drawings.
In recent years, heterojunction solar cells have attracted attention in the field of solar cells, and become a new research hotspot. Heterojunction solar cells are often in the form of slices. For example, in the preparation process of a solar cell, a substantially square solar cell or crystalline silicon wafer is evenly divided into a plurality of rectangular solar cells or silicon wafers, and for example, the solar cells or silicon wafers can be divided into two or three or four or five or six parts into a rectangular solar cell or silicon wafer having an aspect ratio of 2, 1, 3, 1, 5, or 6. The bisection mode is more common. Also known as a half-cell solar cell. In the existing slicing solar cell manufacturing process, a laser cutting machine and other equipment are adopted to slice a whole cell. In the laser slicing process, the laser partially melts the battery piece along the set path, and then the battery piece is broken along the set path through mechanical force to realize slicing. However, the laser damage region and the mechanical fracture region are formed at the cut edge of the cell, so that the silicon atoms in the cell cannot maintain the original ordered arrangement state, a dangling bond is formed, the efficiency of the cell is reduced, and the external output power of the cut-type component is damaged.
The inventor finds out through long-term intensive research on solar cells that: in a general solar cell manufacturing method, a slicing step is provided after a light injection annealing treatment, which results in a decrease in the magnitude of the efficiency gain of the light injection annealing treatment; in another general solar cell preparation method, a slicing step is arranged at the foremost end of a manufacturing process, and silicon-containing film layers and transparent conductive films are deposited after silicon substrates are sliced.
The present application has been made in view of the discovery and analysis of the above-mentioned technical problems.
As shown in fig. 1, a first aspect of the embodiments of the present application provides a method for manufacturing a solar cell, including:
and S10, a step: depositing a transparent conductive film on the front surface and the back surface of the first prefabricated piece to obtain a second prefabricated piece, wherein the first prefabricated piece comprises a silicon substrate, a first silicon-containing film layer arranged on the front surface of the silicon substrate and a second silicon-containing film layer arranged on the back surface of the silicon substrate;
and S20: cutting the second preform segment to slice the second preform segment and obtain a plurality of third preform segments having cut surfaces;
and S30: metallizing the third preform to obtain a fourth preform having a metal electrode;
and S40, a step: and (5) performing light injection annealing on the fourth prefabricated sheet to obtain the solar cell.
According to the preparation method of the solar cell, the slicing step is arranged after the step of depositing the transparent conductive film, so that at least one edge of the transparent conductive film of the finally obtained solar cell is free from the edge distance, the problems of poor current collection effect and low cell efficiency are avoided, and the efficiency of the solar cell is favorably improved. And the slicing step is arranged before the light injection annealing step, so that the amplitude of reduction of the cell efficiency caused by the slicing step after light injection can be effectively controlled, and the higher cell efficiency of the solar cell is ensured. In the preparation method provided by the first aspect of the application, the slicing step is arranged in the middle of the whole manufacturing process, the cost of the equipment input end is reduced, the speed requirement on the whole automatic transmission of the prefabricated battery piece is reduced, the generation of fragments is reduced, the second prefabricated piece is provided with the film layers such as the deposited transparent conductive film, the mechanical stress born by the thickness increase of the prefabricated piece is increased, the fragment rate is reduced, and the manufacturing cost of the whole battery is lower.
In some optional embodiments, the method for manufacturing a solar cell provided in the first aspect of the present application is a method for manufacturing a heterojunction solar cell.
In some optional embodiments of the first aspect of the present application, as shown in fig. 2, the preparation method further comprises:
and S01: performing silicon substrate surface treatment to obtain an optimized silicon substrate, wherein the silicon substrate surface treatment comprises double-sided texturing treatment on the front side and the back side of the silicon substrate to form a textured structure;
and S02: and depositing a first silicon-containing film layer on the front surface of the optimized silicon substrate, and depositing a second silicon-containing film layer on the back surface of the optimized silicon substrate to obtain a first prefabricated piece.
In some examples of these embodiments, the silicon substrate is N-type or P-type, and the silicon substrate may be a single crystal silicon substrate or a polycrystalline silicon substrate. The resistivity of the silicon matrix is 0.1-20 ohm cm, and the thickness range is 40-300 μm. The silicon substrate may be a sheet-like silicon substrate, also known as a silicon wafer.
In some optional embodiments of the first aspect of the present application, the surface treatment of the silicon substrate further includes at least one of a rounding treatment of a textured structure and a treatment of a back surface of the silicon substrate, wherein the treatment of the back surface of the silicon substrate is a polishing treatment of the back surface of the silicon substrate or a wet etching treatment of the back surface of the silicon substrate.
In some examples of these embodiments, the surface treatment of the silicon substrate in the S01 step includes: placing the silicon substrate in a texturing groove KOH or NaOH to carry out double-sided texturing treatment on the front and back of the silicon substrate to form a textured structure, and then using HNO 3 Or O 3 Smoothing the pyramid of the texture surface with HF mixed solution, and polishing the back surface with KOH or NaOH, or further with HNO 3 And HF wet etching the back surface.
In some alternative embodiments of the first aspect of the present application, as shown in fig. 3, in step S10 of depositing transparent conductive films on the front and back surfaces of the first preform sheet,
the front transparent conductive film 3 of the second prefabricated piece covers the front surface of the silicon substrate 1, the back transparent conductive film 5 of the second prefabricated piece covers the back surface of the silicon substrate 1, and a distance D exists between the edge of the back transparent conductive film 5 of the second prefabricated piece and the edge of the back surface of the silicon substrate 1.
In some optional embodiments of the first aspect of the present disclosure, the distance D to the edge ranges from 0.001mm to 1.0mm.
In these embodiments, the distance D from the edge is set to prevent the problem of electrical leakage and disconnection due to contact between the front transparent conductive film 3 and the back transparent conductive film 5, thereby ensuring the reliability of the battery. After the step S10 is finished, the step S20 is performed, so that the distance D between the edge of the transparent conductive film 5 on the back surface of the third preformed sheet at the cutting surface and the edge of the back surface of the silicon substrate 1 does not exist, the current collection effect of the finally manufactured solar cell is increased, and the efficiency of the cell is improved.
In some optional embodiments of the first aspect of the present application, the first pre-fabricated piece includes a silicon substrate 1, a first silicon-containing film layer 2 disposed on a front surface of the silicon substrate 1, and a second silicon-containing film layer 4 disposed on a back surface of the silicon substrate 1.
The first silicon-containing film layer 2 includes a first intrinsic silicon thin film 21 and a first doped silicon-containing thin film 22 which are stacked. The first intrinsic silicon film 21 is disposed on the front surface of the silicon substrate 1, and the first doped silicon-containing film 22 is disposed on a surface of the first intrinsic silicon film 21 opposite to the silicon substrate 1.
The second silicon-containing film layer 4 includes a second intrinsic silicon thin film 41 and a second doped silicon-containing thin film 42 which are stacked. The second intrinsic silicon film 41 is disposed on the back surface of the silicon substrate 1, and the second doped silicon-containing film 42 is disposed on a surface of the second intrinsic silicon film 41 opposite to the silicon substrate 1.
In some examples of these embodiments, the first intrinsic silicon thin film 21 is a single-layer structure. The first intrinsic silicon film 21 is selected from any one of a microcrystalline silicon film, a nano silicon film, an amorphous silicon film, a silicon oxide film and a silicon carbide film, and the thickness is 1nm to 50nm.
Alternatively, the first intrinsic silicon thin film 21 is a laminated structure including a plurality of film layers. Each film layer in the first intrinsic silicon film 21 is selected from any one of a microcrystalline silicon film layer, a nano silicon film layer, an amorphous silicon film layer, a silicon oxide film layer, and a silicon carbide film layer.
In some examples, the first intrinsic silicon thin film 21 is a stacked structure including a plurality of film layers, and each film layer film-forming substance is the same, for example, the first intrinsic silicon thin film 21 includes a plurality of stacked microcrystalline silicon film layers. In some examples, the properties (including at least one of refractive index, absorption coefficient, forbidden band width, and H content) of each microcrystalline silicon film layer in the plurality of stacked microcrystalline silicon film layers are different from each other.
In some examples of these embodiments, the first doped silicon-containing film 22 is a single layer structure. The first doped silicon-containing film 22 is selected from any one of a microcrystalline silicon film, a nano silicon film, an amorphous silicon film, a silicon oxide film and a silicon carbide film, and has a thickness of 1nm to 50nm.
Alternatively, the first doped silicon-containing film 22 is a stacked structure including a plurality of film layers. Each of the first doped silicon-containing thin film 22 is selected from any one of a microcrystalline silicon film, a nano-silicon film, an amorphous silicon film, a silicon oxide film, and a silicon carbide film.
In some examples, the first doped silicon-containing film 22 is a stacked structure including a plurality of film layers, and each film layer forming material is the same, for example, the first doped silicon-containing film 22 includes a plurality of stacked microcrystalline silicon film layers. In some examples, the properties (including at least one of refractive index, absorption coefficient, forbidden band width, and H content) of each microcrystalline silicon film layer in the plurality of stacked microcrystalline silicon film layers are different from each other.
The first doped silicon-containing film 22 is an N-type doped silicon-containing film or a P-type doped silicon-containing film.
In some examples of these embodiments, the second intrinsic silicon thin film 41 is a single-layer structure. The second intrinsic silicon film 41 is selected from any one of a microcrystalline silicon film, a nano silicon film, an amorphous silicon film, a silicon oxide film and a silicon carbide film, and has a thickness of 1nm to 50nm.
Alternatively, the second intrinsic silicon thin film 41 is a stacked-layer structure including a plurality of film layers. Each film layer of the second intrinsic silicon film 41 is selected from any one of a microcrystalline silicon film layer, a nano silicon film layer, an amorphous silicon film layer, a silicon oxide film layer, and a silicon carbide film layer.
In some examples, the second intrinsic silicon thin film 41 is a stacked structure including a plurality of film layers, and each film layer film-forming substance is the same, for example, the second intrinsic silicon thin film 41 includes a plurality of stacked microcrystalline silicon film layers. In some examples, properties of each microcrystalline silicon film layer in the plurality of stacked microcrystalline silicon film layers (including at least one of a refractive index, an absorption coefficient, a forbidden band width, and an H content) are different from each other.
In some examples of these embodiments, the second doped silicon-containing film 42 is a single layer structure. The second doped silicon-containing film 42 is selected from any one of a microcrystalline silicon film, a nano silicon film, an amorphous silicon film, a silicon oxide film and a silicon carbide film, and has a thickness of 1nm to 50nm.
Alternatively, the second doped silicon-containing film 42 is a stacked structure including a plurality of film layers. Each of the second doped silicon-containing film 42 is selected from any one of a microcrystalline silicon film, a nano-silicon film, an amorphous silicon film, a silicon oxide film, and a silicon carbide film.
In some examples, the second doped silicon-containing film 42 is a stacked structure including a plurality of film layers, and each film layer forming material is the same, for example, the second doped silicon-containing film 42 includes a plurality of stacked microcrystalline silicon film layers. In some examples, the properties (including at least one of the refractive index, the absorption coefficient, the forbidden band width, and the H content) of each of the plurality of stacked microcrystalline silicon film layers are different from each other.
The second doped silicon-containing film 42 is an N-type doped silicon-containing film or a P-type doped silicon-containing film.
The first doped silicon-containing film 22 and the second doped silicon-containing film 42 have opposite doping types. That is, the first doped silicon-containing film 22 is an N-type doped silicon-containing film, and the second doped silicon-containing film 42 is a P-type doped silicon-containing film; alternatively, the first doped silicon-containing film 22 is a P-type doped silicon-containing film and the second doped silicon-containing film 42 is an N-type doped silicon-containing film.
In some examples of these embodiments, the first and second silicon-containing films 2 and 4 are formed by Plasma Enhanced Chemical Vapor Deposition (PECVD), hot Wire Chemical Vapor Deposition (HWCVD), low Pressure Chemical Vapor Deposition (LPCVD), atmospheric Pressure Chemical Vapor Deposition (APCVD), or Physical Vapor Deposition (PVD).
In some optional embodiments of the first aspect of the present application, the front transparent conductive film 3 is a single-layer structure or a laminated structure including a plurality of film layers. The material of the front transparent conductive film 3 is selected from metal oxides and/or metal nitrides doped with specific elements. The metal oxide includes indium oxide, tin oxide, zinc oxide, and cadmium oxide, and the metal nitride may be titanium nitride. The specific elements for doping comprise indium, tin, calcium, aluminum, cadmium, zinc, cerium and fluorine, and the thickness of the front transparent conductive film 3 can be 1 nm-100 nm.
In some optional embodiments of the first aspect of the present application, the back transparent conductive film 5 is a single layer structure or a stacked structure including a plurality of film layers. The material of the back transparent conductive film 5 is selected from metal oxides and/or metal nitrides doped with specific elements. The metal oxide includes indium oxide, tin oxide, zinc oxide, and cadmium oxide, and the metal nitride may be titanium nitride. The specific elements for doping comprise indium, tin, calcium, aluminum, cadmium, zinc, cerium and fluorine, and the thickness of the front transparent conductive film 3 ranges from 1nm to 100nm.
In some optional embodiments of the first aspect of the present application, the front and back transparent conductive films 5 are prepared by physical vapor deposition (PVD, such as sputtering and evaporation), reactive Plasma Deposition (RPD), atomic deposition (ALD), plasma enhanced atomic deposition (PEALD), enhanced chemical vapor deposition (PECVD), low Pressure Chemical Vapor Deposition (LPCVD), or Atmospheric Pressure Chemical Vapor Deposition (APCVD).
In some optional embodiments of the first aspect of the present application, the preparation method further comprises:
depositing a passivation film 6 to a cut surface of the third preform sheet.
In some examples of these embodiments, the passivation film 6 has a single-layer structure, and the material of the passivation film 6 is selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON (silicon oxynitride), polysilicon, amorphous silicon, micron silicon, and SiC; alternatively, the first and second liquid crystal display panels may be,
the passivation film 6 has a laminated structure formed by laminating a plurality of sub-film layers, and the material of each sub-film layer is selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON, polysilicon, amorphous silicon, micron silicon, and SiC.
In some examples of these embodiments, the thickness of the passivation film 6 ranges from 1nm to 300nm.
In some examples of these embodiments, the passivation film 6 may be deposited to the cut surface of the third preform by a tube or plate Plasma Enhanced Chemical Vapor Deposition (PECVD) process, an Atomic Layer Deposition (ALD) process, or a Plasma Enhanced Atomic Layer Deposition (PEALD) process.
Referring to fig. 3 and 4 together, in some examples of these embodiments, the passivation film 6 is disposed on the cutting surface, one end of the passivation film 6 extends to the edge of the front transparent conductive film 3 of the third preformed sheet facing away from the silicon substrate 1, and the other end of the passivation film 6 extends to the edge of the back transparent conductive film 5 of the third preformed sheet facing away from the silicon substrate 1.
In these embodiments, the cut face is re-passivated after dicing, reducing the surface recombination of the cut face by depositing a passivation film.
In some alternative embodiments of the first aspect of the present application, as shown in fig. 5, in a method for manufacturing a solar cell:
the step S21 of depositing a passivation film onto the cut surfaces of the third preform sheet precedes the step S30 of metallizing the third preform sheet to obtain a fourth preform sheet having a metal electrode.
In these embodiments, the step of metallizing the third preform includes curing a low temperature silver paste, and the curing operation and the subsequent light injection annealing (i.e. photo-thermal treatment) can further enhance the performance of the passivation film on the cut surface and further reduce the surface recombination.
In some alternative embodiments of the first aspect of the present application, as shown in fig. 6, the method for manufacturing a solar cell further comprises, between the step of dividing the second preform sheet to slice the second preform sheet and obtain a plurality of third preform sheets having cut surfaces and the step of depositing a passivation film on the cut surfaces of the third preform sheets:
and cleaning the cutting surface to remove oxides and attachments on the cutting surface, wherein at least one of hydrofluoric acid solution, alkali solution and plasma is adopted to clean the cutting surface in the step of cleaning the cutting surface.
As shown in fig. 7, in some examples of these embodiments, the step S20 of dividing the second preform segment to slice the second preform segment and obtain a plurality of third preform segments having cut surfaces is followed by the step S21 of cleaning the cut surfaces and the step S22 of depositing a passivation film on the cut surfaces of the third preform segments.
In some alternative embodiments of the first aspect of the present application, as shown in fig. 8, in a method for manufacturing a solar cell:
the step S31 of depositing a passivation film onto the cut surfaces of the third preform is between the step S30 of metallizing the third preform to obtain a fourth preform having a metal electrode and the step S40 of light implant annealing the fourth preform to obtain a solar cell.
As shown in fig. 9, in some examples of these embodiments, the step S30 of metallizing the third preform sheet to obtain a fourth preform sheet having a metal electrode is followed by the step S31 of cleaning the cut surface and the step S32 of depositing a passivation film onto the cut surface of the third preform sheet.
In a second aspect, the present application provides a solar cell, which is prepared by the method for preparing the solar cell of the first aspect. The solar cell provided by the second aspect of the present application has a high power generation efficiency. The solar cell provided by the second aspect of the present application also improves the external output power of the half-cell module including the solar cell.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method for manufacturing a solar cell, comprising:
depositing a transparent conductive film on the front surface and the back surface of a first prefabricated slice to obtain a second prefabricated slice, wherein the first prefabricated slice comprises a silicon substrate, a first silicon-containing film layer arranged on the front surface of the silicon substrate and a second silicon-containing film layer arranged on the back surface of the silicon substrate;
cutting said second preform segment to slice said second preform segment and obtain a plurality of third preform segments having cut surfaces;
metallizing the third pre-sheet to obtain a fourth pre-sheet having a metal electrode;
and carrying out light injection annealing on the fourth prefabricated sheet to obtain the solar cell.
2. The method for manufacturing a solar cell according to claim 1, wherein in the step of depositing the transparent conductive film on the front and back surfaces of the first preform sheet,
the front transparent conductive film of the second precast piece covers the front of the silicon substrate, the back transparent conductive film of the second precast piece covers the back of the silicon substrate, and a distance D exists between the edge of the back transparent conductive film of the second precast piece and the edge of the back of the silicon substrate;
the distance D from the edge ranges from 0.001mm to 1.0mm.
3. The method of claim 1, further comprising:
depositing a passivation film to the cut face of the third preform sheet.
4. The method for manufacturing a solar cell according to claim 3, wherein:
the step of depositing a passivation film onto the cut face of the third pre-form is prior to the step of metallising the third pre-form.
5. The method of manufacturing a solar cell according to claim 3, further comprising, between the step of dividing the second preform sheet and the step of depositing a passivation film onto the cut surface of the third preform sheet:
and cleaning the cutting surface to remove oxides and attachments on the cutting surface, wherein at least one of hydrofluoric acid solution, alkali solution and plasma is adopted to clean the cutting surface in the step of cleaning the cutting surface.
6. The method for manufacturing a solar cell according to claim 3, wherein:
the step of depositing a passivation film to the cut face of the third pre-form is between the step of metallizing the third pre-form and the step of photo-implant annealing the fourth pre-form.
7. The method according to claim 3, wherein in the step of depositing a passivation film on the cut surfaces of the third preform sheet,
the passivation film is of a single-layer structure, and the material of the passivation film is selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON, polysilicon, amorphous silicon, micron silicon, and SiC; alternatively, the first and second liquid crystal display panels may be,
the passivation film is a laminated structure formed by laminating a plurality of sub-film layers, and the material of each sub-film layer is selected from SiO 2 、Al 2 O 3 、Ga 2 O 3 、TiO 2 At least one of SiON, polysilicon, amorphous silicon, micron silicon, and SiC;
the thickness of the passive film ranges from 1nm to 300nm.
8. The method of claim 1, further comprising:
performing silicon substrate surface treatment to obtain the optimized silicon substrate, wherein the silicon substrate surface treatment comprises double-sided texturing treatment on the front side and the back side of the silicon substrate to form a textured structure;
and depositing a first silicon-containing film layer on the front surface of the optimized silicon substrate, and depositing a second silicon-containing film layer on the back surface of the optimized silicon substrate to obtain the first prefabricated piece.
9. The method of claim 8, wherein the silicon substrate surface treatment further comprises at least one of a smoothing treatment of the textured structure and a back treatment of the silicon substrate, wherein the back treatment of the silicon substrate is a polishing treatment of the back surface of the silicon substrate or a wet etching treatment of the back surface of the silicon substrate.
10. A solar cell, characterized in that it is produced by a method of producing a solar cell according to any one of claims 1 to 9.
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