CN115274869B - Passivation contact structure with same polarity, battery, preparation process, assembly and system - Google Patents
Passivation contact structure with same polarity, battery, preparation process, assembly and system Download PDFInfo
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- CN115274869B CN115274869B CN202110484677.7A CN202110484677A CN115274869B CN 115274869 B CN115274869 B CN 115274869B CN 202110484677 A CN202110484677 A CN 202110484677A CN 115274869 B CN115274869 B CN 115274869B
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- 238000002161 passivation Methods 0.000 title claims abstract description 100
- 238000002360 preparation method Methods 0.000 title abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 186
- 229920005591 polysilicon Polymers 0.000 claims abstract description 168
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 54
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000007650 screen-printing Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 238000010306 acid treatment Methods 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims 2
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- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
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- 238000005240 physical vapour deposition Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
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- 238000010248 power generation Methods 0.000 description 3
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
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- -1 silver-aluminum Chemical compound 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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Abstract
The invention belongs to the technical field of solar cells, and relates to a passivation contact structure with the same polarity, a cell and a preparation process thereof; the passivation contact structure with the same polarity comprises a silicon substrate, a dielectric layer arranged on at least one surface of the silicon substrate, a polysilicon layer and a first polysilicon doping layer which are alternately arranged on the surface of the dielectric layer, and a second polysilicon doping layer arranged on the surface of the first polysilicon doping layer; the sum of the thicknesses of the first polysilicon doping layer and the second polysilicon doping layer is larger than the thickness of the polysilicon layer, the doping polarities of the first polysilicon doping layers positioned on two sides of the polysilicon layer are the same, and the doping concentration of the second polysilicon doping layer is larger than that of the first polysilicon doping layer. The passivation contact structure with the same polarity can obviously reduce metal contact recombination and contact resistance, and can improve short-circuit current and double-sided rate after being applied to a solar cell (such as a TOPCON cell), so that photoelectric conversion efficiency of the solar cell can be improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a passivation contact structure with the same polarity, a cell, a preparation process, a component and a system.
Background
Currently, the most efficient solar cell technology for mass production in the photovoltaic industry is the passivation contact technology, namely TOPCon (Tunnel Oxide Passivated Contact, tunnel oxide passivation contact) cell technology. The TOPCON battery technology mainly combines an ultrathin tunneling oxide layer (such as a silicon oxide layer) with a heavily doped polysilicon doped layer, so that the silicon oxide layer reduces the interface state density between a silicon substrate and Poly-Si through chemical passivation, meanwhile, majority carriers realize transportation through a tunneling principle, and minority carriers are difficult to tunnel through the silicon oxide layer due to higher potential barrier and Poly-Si field effect; thus, better surface passivation and contact performance can be obtained, so that the solar cell has higher open-circuit voltage and lower contact resistance. In addition, the IBC (Interdigitated back contact, cross back contact) battery has no grid line shielding on the front surface, so that the front surface light trapping structure and the back surface metal electrode structure can be optimized to the greatest extent, and the IBC battery has higher short circuit current density and higher filling factor. Therefore, the current development of higher efficiency solar cells adopts the POLO-IBC cell technology combining the TOPCon cell technology with high open circuit voltage and low contact resistance with the IBC cell technology with high short circuit current density and high fill factor, and the cell technology has been applied by ISFH research institute and has obtained a 26.1% photoelectric conversion efficiency solar cell.
However, the photoelectric conversion efficiency of the existing solar cell is still not high, and whether it is the TOPCon cell technology or the POLO-IBC cell technology, the main reasons for restricting the further improvement of the photoelectric conversion efficiency of the solar cell are the metal contact recombination and the higher contact resistance. In addition, as the preparation process of the interdigital structure on the back of the traditional IBC battery needs to use a complex and high-cost photoetching mask technology, if the interdigital structure is fused with a passivation contact structure, the complexity of the preparation process of the solar battery can be increased, the manufacturing cost of the solar battery can be greatly increased, and the mass production can be difficult to realize. Based on this, the invention CN201910873413.3 discloses a method for preparing a local passivation contact structure suitable for a solar cell, although the preparation method does not need an additional mask, the preparation method can prepare the local passivation contact structure after oxidation, cleaning and removing an oxide layer of an undoped region, alkali etching and removing a polysilicon layer of the undoped region, cleaning and removing a residual oxide layer and the like in sequence after high-temperature annealing, and the preparation method is still complex, thus the preparation process of the solar cell is still complex, and the short-circuit current and the double-sided rate of the formed local passivation contact structure are low, which still can affect the improvement of the photoelectric conversion efficiency of the solar cell.
Disclosure of Invention
The invention aims to provide a passivation contact structure with the same polarity, which can not only remarkably reduce metal contact recombination and contact resistance, but also improve short-circuit current and double-sided rate of a solar cell (such as a TOPCO cell) after being applied to the solar cell, and further improve photoelectric conversion efficiency of the solar cell.
It is a second object of the present invention to provide a battery with passivation contact structures of the same polarity.
The invention further provides a preparation process of the battery with the passivation contact structure with the same polarity.
The fourth object of the present invention is to provide a solar cell module.
The fifth object of the present invention is to provide a solar cell system.
Based on the above, the invention discloses a passivation contact structure with the same polarity, which comprises a silicon substrate, a dielectric layer arranged on at least one surface of the silicon substrate, a polysilicon layer and a first polysilicon doping layer alternately arranged on the surface of the dielectric layer, and a second polysilicon doping layer arranged on the surface of the first polysilicon doping layer; the sum of the thicknesses of the first polysilicon doping layer and the second polysilicon doping layer is larger than the thickness of the polysilicon layer, the doping polarities of the first polysilicon doping layers positioned on two sides of the polysilicon layer are the same, and the doping concentration of the second polysilicon doping layer is larger than that of the first polysilicon doping layer.
Preferably, the doping polarities of the polysilicon layer and the first polysilicon doping layer and the second polysilicon doping layer are the same; the doping concentration of the first polysilicon doping layer is greater than that of the polysilicon layer.
Preferably, the crystallization rate of the polysilicon layer is greater than that of the second polysilicon doped layer; the crystallization rate of the first polysilicon doping layer is greater than that of the second polysilicon doping layer.
Preferably, the silicon substrate is an N-type crystalline silicon substrate.
Preferably, the dielectric layer is made of one or more of silicon oxide, aluminum oxide and chromium oxide; the thickness of the dielectric layer is 1-3.1 nm.
Further preferably, the thickness of the dielectric layer is 1.2 to 1.8nm.
The invention also discloses a battery, which comprises the passivation contact structure with the same polarity, a back passivation film arranged on the surface of the passivation contact structure, a back metal electrode arranged on the surface of the second polysilicon doping layer and extending to the outside of the back passivation film, a p+ emitter arranged on the front surface of the silicon substrate, a front passivation film arranged on the surface of the p+ emitter, and a front metal electrode arranged on the surface of the p+ emitter and extending to the outside of the front passivation film, wherein the passivation contact structure is any one of claims 1-7.
Preferably, the front surface of the silicon substrate is a pyramid-shaped light trapping structure, and the p+ emitter is arranged on the surface of the light trapping structure; the back surface of the silicon substrate is of a planar structure.
The invention also discloses a preparation process of the battery, which comprises the following preparation steps:
step 1, preprocessing the silicon substrate to obtain a preprocessed silicon substrate;
step 2, preparing a p+ emitter on the front surface of the pretreated silicon substrate;
step 3, preparing a dielectric layer on the back of the pretreated silicon substrate;
step 4, preparing an amorphous silicon layer on the surface of the dielectric layer;
step 5, doping treatment is carried out on the surface of the amorphous silicon layer;
step 6, selectively doping the amorphous silicon layer by adopting silicon slurry containing doping atoms, then converting an amorphous structure of the amorphous silicon layer into an n+ polysilicon structure through heat treatment, and selectively diffusing part of doping atoms into the n+ polysilicon structure, so that the polysilicon structure forms polysilicon layers and first polysilicon doping layers alternately arranged on the surface of the dielectric layer, and simultaneously the silicon slurry containing the doping atoms forms a second polysilicon doping layer with doping concentration larger than that of the first polysilicon doping layer on the surface of the first polysilicon doping layer;
step 7, passivating the surfaces of the p+ emitter and the passivation contact structure to form a front passivation film on the surface of the p+ emitter and a back passivation film on the surface of the passivation contact structure;
and 8, carrying out metallization treatment on the p+ emitter and the second polysilicon doped layer to form a front metal electrode extending to the upper part of the front passivation film on the p+ emitter, and forming a back metal electrode extending to the lower part of the back passivation film on the second polysilicon doped layer, thus obtaining the battery with the passivation contact structure with the same polarity.
Preferably, in step 1, the pretreatment method is alkali treatment or acid treatment; after pretreatment, the front surface of the silicon substrate is of a pyramid-shaped light trapping structure, and the back surface of the silicon substrate is of a planar structure.
Preferably, in step 2, the step of preparing the p+ emitter on the front surface of the pretreated silicon substrate is: boron diffusion is carried out on the front surface of the pretreated silicon substrate so as to prepare the p+ emitter, and a BSG layer is formed on the surface of the p+ emitter;
and after the steps 5 and 6, forming a PSG layer on the surfaces of the polysilicon layer and the second polysilicon doping layer.
Further preferably, before step 7, a step of performing a chemical cleaning process to remove the BSG layer and the PSG layer is further included; the chemical cleaning treatment is performed using an acid solution.
In the step 4, the preparation method of the amorphous silicon layer is a physical vapor deposition method, a low-pressure chemical vapor deposition method, a plasma chemical vapor deposition method or a normal-pressure chemical vapor deposition method; in the step 6, the method of the selective doping treatment of the silicon slurry containing doping atoms is a screen printing method or an ink-jet method; the silicon slurry containing the doping atoms is preferably silicon slurry containing phosphorus doping atoms;
in the step 7, the passivation treatment method is an atomic layer deposition method, a chemical vapor deposition method or a normal pressure chemical vapor deposition method;
in step 8, the metallization process comprises the following steps: and the p+ emitter electrode is printed with silver-aluminum paste electrode and sintered at high temperature to form the front metal electrode, and the second polysilicon doped layer is printed with silver paste and sintered at 800-900 ℃ to form the back metal electrode.
The invention also discloses a solar cell module, which comprises a front surface material layer, a front surface packaging layer, a cell, a back surface packaging layer and a back surface material layer which are sequentially arranged from top to bottom, wherein the cell is provided with the passivation contact structure with the same polarity.
The invention also discloses a solar cell system which comprises one or more than one solar cell module, wherein the solar cell module is the solar cell module.
Compared with the prior art, the invention at least comprises the following beneficial effects:
1. the passivation contact structure with the same polarity can be applied to a solar cell, and the heavily doped second polysilicon doped layer at the outermost layer is in contact with a metal electrode, so that metal contact recombination can be remarkably reduced, and meanwhile, the contact resistance can be reduced due to higher doping concentration of the second polysilicon doped layer.
2. After the passivation contact structure with the same polarity is applied to the TOPCON battery, the metal contact recombination and contact resistance can be reduced, and the polycrystalline silicon layer of the non-contact area can be thinned, so that the parasitic absorption of carriers can be reduced, the short-circuit current of the solar battery can be improved, the light reflection can be reduced, the light utilization rate of the solar battery can be improved, and the double-sided rate of the solar battery can be further improved; in this way, the photoelectric conversion efficiency of the solar cell with the passivation contact structure having the same polarity can be further improved.
3. When the doping concentration of the first polysilicon doping layer is smaller than that of the second polysilicon doping layer, the first polysilicon doping layer with the secondary doping concentration and the dielectric layer can jointly play a role in field passivation and tunneling, so that the field passivation and tunneling effect of the passivation contact structure is enhanced.
4. The sum of the thicknesses of the first polysilicon doping layer and the second polysilicon doping layer is larger than the thickness of the polysilicon layer, namely the thickness of the polysilicon layer is smaller, so that the consumption of raw materials is reduced by thinning the thickness of the polysilicon layer in the non-contact area, and the production cost is further reduced.
5. In the preparation process of the battery with the passivation contact structure with the same polarity, the silicon slurry containing doping atoms is locally printed to a specific area of the amorphous silicon layer in a screen printing mode, photoetching and multi-step masking are not needed, the amorphous silicon layer can be synchronously converted into an n+ polycrystalline silicon structure through one-time heat treatment, polycrystalline silicon layers and first polycrystalline silicon doping layers which are alternately arranged on the surface of the dielectric layer are synchronously prepared, and meanwhile, a second polycrystalline silicon doping layer positioned on the surface of the first polycrystalline silicon doping layer can be synchronously prepared, so that the technological process of the passivation contact structure is greatly simplified, and the production efficiency is improved; moreover, the screen printing can accurately dope the silicon paste containing doping atoms into the first polysilicon doping layer so as to avoid polluting the polysilicon layer, and further ensure the passivation performance of the passivation contact structure in the battery. In addition, the preparation process of the battery can be compatible with the existing production line, has low cost and is easy for mass production.
Drawings
Fig. 1 is a schematic structural diagram of a passivation contact structure with the same polarity in this embodiment.
Fig. 2 is a schematic structural diagram of a battery according to the present embodiment.
Fig. 3 is a schematic structural diagram of a silicon substrate after step 1 in the process for manufacturing a battery according to the present embodiment.
Fig. 4 is a schematic structural diagram of a silicon substrate after step 2 in the process for manufacturing a battery according to the present embodiment.
Fig. 5 is a schematic structural diagram of a silicon substrate after step 3 in the process for manufacturing a battery according to the present embodiment.
Fig. 6 is a schematic structural diagram of a silicon substrate after step 4 in the process for manufacturing a battery according to the present embodiment.
Fig. 7 is a schematic structural diagram of a silicon substrate after step 5 in the process of manufacturing a battery according to the present embodiment.
Fig. 8 is a schematic structural diagram of a silicon substrate after step 6 in the process of manufacturing a battery according to the present embodiment.
Fig. 9 is a schematic structural diagram of a silicon substrate after step 7 in the process of manufacturing a battery according to the present embodiment.
Reference numerals illustrate: a silicon substrate 1; p+ emitter 2; BSG layer 3; a front passivation film 4; a front metal electrode 5; a dielectric layer 6; an amorphous silicon layer 7; a polysilicon layer 8; a first polysilicon doped layer 9; a second polysilicon doped layer 10; a PSG layer 11; a back passivation film 12; and a back metal electrode 13.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Examples
Referring to fig. 1, a passivation contact structure with the same polarity in this embodiment includes a silicon substrate 1, a dielectric layer 6, a polysilicon layer 8, a first polysilicon doped layer 9, and a second polysilicon doped layer 10. Wherein the dielectric layer 6 is disposed on the back surface and/or the front surface of the silicon substrate 1, the polysilicon layer 8 and the first polysilicon doped layer 9 are locally disposed on the surface of the dielectric layer 6, and the polysilicon layer 8 is adjacent to the side surface of the first polysilicon doped layer 9, that is, the polysilicon layer 8 and the first polysilicon doped layer 9 are alternately disposed on the surface of the dielectric layer 6, and the second polysilicon doped layer 10 is disposed on the surface of the first polysilicon doped layer 9.
Wherein the silicon substrate 1 is an N-type crystalline silicon substrate. The dielectric layer 6 is made of one or more of silicon oxide, aluminum oxide and chromium oxide; the dielectric layer 6 mainly plays roles of interface passivation and tunneling. Specifically, the thickness of the dielectric layer 6 is 1 to 3.1nm; the thickness of the dielectric layer 6 is preferably 1.2 to 1.8nm, more preferably 1.3nm.
Wherein, the doping polarities of the first polysilicon doping layers 9 positioned at two sides of the polysilicon layer 8 are the same, and the doping concentration of the second polysilicon doping layer 10 is larger than that of the first polysilicon doping layer 9; the first polysilicon doped layer 9 with the secondary doping concentration can jointly play a role in field passivation and tunneling with the dielectric layer 6, so that the field passivation and tunneling of the passivation contact structure are enhanced.
Wherein the sum of the thicknesses of the first polysilicon doped layer 9 and the second polysilicon doped layer 10 is greater than the thickness of the polysilicon layer 8; thus, the thickness of the polysilicon layer 8 is smaller, and the consumption of the raw material of the polysilicon layer 8 can be reduced by thinning the thickness of the polysilicon layer 8 in the non-contact region, thereby reducing the production cost.
The polysilicon layer 8 has a doped structure, the doping polarity of the polysilicon layer 8 is the same as the doping polarities of the first polysilicon doping layer 9 and the second polysilicon doping layer 10, and the doping concentration of the first polysilicon doping layer 9 is greater than the doping concentration of the polysilicon layer 8.
After the passivation contact structure with the same polarity is applied to a solar cell, the second heavily doped polysilicon doped layer 10 at the outermost layer can be contacted with a metal electrode, so that metal contact recombination can be obviously reduced, meanwhile, the contact resistance can be reduced due to higher doping concentration of the second polysilicon doped layer, and further the photoelectric conversion efficiency of the cell is improved.
A battery of the present embodiment, see fig. 2, includes a silicon substrate 1, a p+ emitter 2, a front passivation film 4, a front metal electrode 5, a dielectric layer 6, a polysilicon layer 8, a first polysilicon doped layer 9, a second polysilicon doped layer 10, a back passivation film 12, and a back metal electrode 13. Wherein, the p+ emitter 2 is arranged on the front surface of the silicon substrate 1, the front passivation film 4 is arranged on the surface of the p+ emitter 2, and the front metal electrode 5 is arranged on the p+ emitter 2 and extends out of the front passivation film 4; wherein, the arrangement of the dielectric layer 6, the polysilicon layer 8, the first polysilicon doped layer 9 and the second polysilicon doped layer 10 is referred to as a passivation contact structure with the same polarity shown in fig. 1; the back passivation film 12 is provided on the surface of the passivation contact structure, i.e., the back passivation film 12 covers the entire back surface of the battery. The back metal electrode 13 is disposed on the second polysilicon doped layer 10 and extends out of the back passivation film 12.
After the passivation contact structure with the same polarity shown in fig. 1 is applied to a battery (such as a TOPCon battery), the thickness of the polysilicon layer 8 in the non-contact area can be reduced besides reducing metal contact recombination and contact resistance, so that the consumption of raw materials can be reduced, parasitic absorption of carriers can be reduced, short-circuit current of the solar battery can be improved, light reflection can be reduced, light utilization rate of the solar battery can be improved, and double-sided rate of the solar battery can be further improved; thus, the photoelectric conversion efficiency of the battery with the passivation contact structure having the same polarity can be further improved.
The structural changes in the preparation process of the battery according to this embodiment are shown in fig. 3 to 9, and the preparation process is as follows: firstly, preprocessing a silicon substrate 1, preparing a p+ emitter 2 on the front side of the preprocessed silicon substrate 1, then preparing a dielectric layer 6 on the back side of the preprocessed silicon substrate 1, then preparing an amorphous silicon layer 7 on the back side of the whole dielectric layer 6, and then doping the back side of the whole amorphous silicon layer 7; then, the silicon slurry containing the doping atoms is locally prepared on the back surface of the amorphous silicon layer 7, and then the amorphous structure of the amorphous silicon layer 7 is changed and converted into an n+ polysilicon structure through heat treatment, and meanwhile, part of the doping atoms are continuously diffused into the n+ polysilicon structure, so that the n+ polysilicon structure forms the polysilicon layer 8 and the first polysilicon doping layer 9 which are alternately arranged on the back surface of the dielectric layer 6, and meanwhile, the silicon slurry containing the doping atoms forms the second polysilicon doping layer 10 on the surface of the first polysilicon doping layer 9. And then passivating the p+ emitter 2 and the surface of the passivation contact structure to form a front passivation film 4 on the front surface of the p+ emitter 2 and a back passivation film 12 on the back surface of the passivation contact structure, and then metallizing the p+ emitter 2 and the second polysilicon doped layer 10 to form a front metal electrode 5 extending upwards to above the front passivation film 4 on the p+ emitter 2 and a back metal electrode 13 extending downwards to below the back passivation film 12 on the second polysilicon doped layer 10, thereby obtaining the battery with the passivation contact structure with the same polarity, as shown in fig. 2.
The preparation process of the battery of the embodiment specifically comprises the following preparation steps:
step 1, selecting a proper silicon substrate 1, and preprocessing the silicon substrate 1 to enable the front surface of the silicon substrate 1 to be in a pyramid light trapping structure and enable the back surface of the silicon substrate 1 to be in a plane structure. The pretreatment method is alkali treatment or acid treatment, but is not limited to these two pretreatment methods.
In one example of this embodiment, additives may be added during the alkaline treatment to facilitate the pretreatment process. The structure of the pretreated silicon substrate 1 is shown in fig. 3.
And 2, performing boron doping treatment on the front surface of the pretreated silicon substrate 1 to prepare a p+ emitter 2. The boron doping treatment method is a diffusion method, a spin coating method, a screen printing method or an ink-jet method.
In one example of this embodiment, the steps for preparing the p+ emitter 2 using the diffusion method are: in a normal pressure pipe, boron tribromide is adopted as a boron source, the front surface of a silicon substrate 1 is subjected to boron source diffusion, the diffusion temperature is 700-1000 ℃, the time is 40-100 min, the sheet resistance is 60-100 Ω/sqr, and a BSG layer 3 with the thickness of 60-120 nm is formed on the surface of a p+ emitter 2; specifically, the insertion sheet is carried out in a back-to-back mode in the diffusion process, namely the diffusion surface faces outwards, and the non-diffusion surface faces inwards. After the boron doping treatment of step 2 is completed, the structure is shown in fig. 4.
And 3, preparing a dielectric layer 6 on the back surface of the pretreated silicon substrate 1. In one example of the present embodiment, when the material of the dielectric layer 6 is silicon oxide, the preparation method of the dielectric layer 6 is a nitric acid oxidation method, a high temperature thermal oxidation method or an ozone oxidation method, but is not limited to the above preparation method of the dielectric layer 6.
Specifically, the method for preparing silicon oxide by adopting the nitric acid oxidation method comprises the following steps: the pretreated silicon substrate 1 is placed in nitric acid solution with the mass fraction of 45-80% for reaction for 4-8 min at the reaction temperature of 90-100 ℃, and after the reaction is finished, the silicon substrate 1 is subjected to quick blow-drying treatment by a nitrogen gun, so that silicon oxide with the thickness of 1-3.1 nm can be prepared on the back surface of the silicon substrate 1, and the structure is shown in figure 5.
Step 4, preparing an amorphous silicon layer 7 on the whole back surface of the dielectric layer 6 by Physical Vapor Deposition (PVD), low-pressure chemical vapor deposition (LPCVD), plasma chemical vapor deposition (PECVD) or Atmospheric Pressure Chemical Vapor Deposition (APCVD); correspondingly, the equipment used for depositing the amorphous silicon layer 7 is PVD equipment, LPCVD equipment, PECVD equipment or APCVD equipment.
In one example of this embodiment, the LPCVD method is prepared by: under vacuum of less than 7×10 -3 Introducing SiH under the condition of Torr and temperature of 550-700 DEG C 4 Then carrying out deposition reaction for 10-40 min, vacuumizing, and confirming hazardous gas SiH 4 After the cleaning, nitrogen is introduced to normal pressure, after cooling, the amorphous silicon layer 7 is prepared on the surface of the dielectric layer 6 after being taken out, and the structure of the amorphous silicon layer 7 is shown in figure 6.
And 5, doping the back surface of the whole amorphous silicon layer 7. The doping treatment method is a diffusion method, a spin coating method, a screen printing method or an ink-jet method. The doping treatment preferably employs a phosphorus doped slurry. Specifically, the insertion sheet is carried out in a back-to-back mode in the diffusion process, namely the diffusion surface faces outwards, and the non-diffusion surface faces inwards.
Step 6, after the doping treatment in step 5, performing selective doping treatment on the amorphous silicon layer 7, and performing a heat treatment to convert the amorphous structure of the amorphous silicon layer 7 into a polycrystalline structure, so as to form an n+ polycrystalline silicon structure with smaller and uniform grain size on the surface of the dielectric layer 6, wherein the n+ polycrystalline silicon structure subjected to the doping treatment in step 5 can form a polycrystalline silicon layer 8 through the heat treatment, the structure is shown in fig. 7, and at the same time, part of doping atoms subjected to the selective doping treatment continue to diffuse into the n+ polycrystalline silicon structure of the selective doping region, so that the n+ polycrystalline silicon structure of the selective doping region forms a first polycrystalline silicon doping layer 9; as such, the n+ polysilicon structure forms polysilicon layers 8 and first polysilicon doped layers 9 arranged on the surface of the dielectric layer 6 in an alternating manner; meanwhile, the silicon slurry containing doped atoms used in the selective doping treatment can form a second polysilicon doped layer 10 with a doping concentration greater than that of the first polysilicon doped layer 9 on the surface of the first polysilicon doped layer 9. Preferably, the doping concentration of the second polysilicon doping layer 10 is 1 to 50 times that of the first polysilicon doping layer 9, and the doping concentration of the first polysilicon doping layer 9 is 1 to 50 times that of the polysilicon layer 8. Among them, the method of the selective doping treatment is a screen printing method or an inkjet method, but is not limited to these two methods.
In one example of this embodiment, the step of performing the selective doping process using the screen printing method is: printing silicon paste containing boron doping atoms or silicon paste containing phosphorus doping atoms; taking printing of silicon slurry containing phosphorus doping atoms as an example, after printing, drying at 100-400 ℃ for 5-30 min, annealing at 700-1000 ℃ for 10-30 min, forming a second polysilicon doping layer 10 by the silicon slurry containing phosphorus doping atoms, and selectively diffusing part of phosphorus doping atoms into an n+ polysilicon structure in step 6 on the basis of doping treatment in step 5; in this way, the polysilicon layer 8 and the first polysilicon doped layer 9 disposed on the surface of the dielectric layer 6 can be formed in an alternating manner, and the PSG layer 11 on the surface of the polysilicon layer 8 and the second polysilicon doped layer 10 can be formed by oxidation. The structure of which is shown in fig. 8.
In step 6, the selective doping treatment is preferably a screen printing method. In this way, the silicon slurry containing doping atoms is locally printed to a specific area of the amorphous silicon layer 7 by adopting a screen printing mode, the polycrystalline silicon layer 8 and the first polycrystalline silicon doping layer 9 which are alternately arranged on the surface of the dielectric layer 6 can be synchronously prepared by only one-time heat treatment without photoetching and multi-step masking, and meanwhile, the second polycrystalline silicon doping layer 10 positioned on the surface of the first polycrystalline silicon doping layer 9 is synchronously prepared, so that the technological process of passivating the contact structure is greatly simplified, and the production efficiency is improved; moreover, the screen printing can accurately dope the silicon paste containing doping atoms into the first polysilicon doping layer so as to avoid polluting the polysilicon layer, and further ensure the passivation performance of the passivation contact structure in the battery.
And 7, after the selective doping treatment, performing chemical cleaning treatment to remove the BSG layer 3 and the PSG layer 11. Wherein, the chemical cleaning treatment adopts acid solution. After the chemical cleaning treatment, the structure is shown in FIG. 9.
And 8, after the chemical cleaning treatment, passivating the surfaces of the p+ emitter 2 and the passivation contact structure to form a front passivation film 4 on the surface of the p+ emitter 2 and a back passivation film 12 on the surface of the passivation contact structure. Wherein, the passivation treatment method is Atomic Layer Deposition (ALD), chemical vapor deposition (PECVD) or Atmospheric Pressure Chemical Vapor Deposition (APCVD). Preferably, the surface of the p+ emitter 2 and the surface of the passivation contact structure are synchronously passivated, so that the preparation process flow of the battery is further simplified, and the production efficiency is improved.
And 9, after the passivation treatment is finished, carrying out metallization treatment on the p+ emitter 2 and the second polysilicon doped layer 10 to form a front metal electrode 5 extending out of the front passivation film 4 on the p+ emitter 2, and forming a back metal electrode 13 extending out of the back passivation film 12 on the second polysilicon doped layer 10.
The metallization process is preferably a screen printing process on the metal electrode, specifically, the p+ emitter 2 is screen printed with silver-aluminum paste electrode and sintered at high temperature to form the front metal electrode 5; the second polysilicon doped layer 10 is screen printed with silver paste and sintered at 800-900 c to form the back metal electrode 13. After the metallization process, the preparation of the battery with the passivation contact structure having the same polarity is completed, and the structure is shown in fig. 2. In the step 9, the metal electrode is prepared by screen printing, and the metal electrode and the doped layer can be accurately aligned in a overprinting alignment mode, so that the leakage risk is reduced.
The back metal electrode 13 in the obtained battery is contacted with the heavily doped second polysilicon doped layer 10, so that the recombination of metal contact areas can be effectively reduced, the contact resistance can be reduced, and the power generation efficiency of the battery can be improved; the crystallization rate of the polysilicon layer 8 in the prepared battery is larger than that of the second polysilicon doped layer 10, and the crystallization rate of the first polysilicon doped layer 9 is also larger than that of the second polysilicon doped layer 10; in this way, atoms in the silicon substrate 1 which play a role in power generation can be effectively prevented from being combined by defects in the polysilicon layer 8 and the first polysilicon doped layer 9 with low crystallization rate, and the power generation efficiency of the battery can be further improved. In addition, the preparation process of the battery does not need complicated laser doping and masking processes, and the process is simple; the preparation process is compatible with the existing production line, has low cost and is easy for mass production.
The embodiment also provides a solar cell module, which comprises a front surface material layer, a front surface packaging layer, a solar cell, a back surface packaging layer and a back surface material layer which are sequentially arranged from top to bottom, wherein the solar cell is the cell with the passivation contact structure with the same polarity.
The embodiment also provides a solar cell system, which comprises one or more than one solar cell module, wherein the solar cell module is the solar cell module.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
The foregoing has outlined rather broadly the more detailed description of the invention in order that the detailed description of the invention that follows may be better understood, and in order that the present principles and embodiments may be better understood; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (10)
1. The passivation contact structure with the same polarity is characterized by comprising a silicon substrate, a dielectric layer arranged on at least one surface of the silicon substrate, a polysilicon layer and a first polysilicon doping layer alternately arranged on the surface of the dielectric layer, and a second polysilicon doping layer arranged on the surface of the first polysilicon doping layer; the sum of the thicknesses of the first polysilicon doping layer and the second polysilicon doping layer is larger than the thickness of the polysilicon layer, the doping polarities of the first polysilicon doping layers positioned on two sides of the polysilicon layer are the same, and the doping concentration of the second polysilicon doping layer is larger than that of the first polysilicon doping layer;
the doping polarities of the polysilicon layer and the first polysilicon doping layer are the same as those of the second polysilicon doping layer; the doping concentration of the first polysilicon doping layer is greater than that of the polysilicon layer;
the crystallization rate of the polysilicon layer is larger than that of the second polysilicon doping layer; the crystallization rate of the first polysilicon doping layer is greater than that of the second polysilicon doping layer.
2. A passivation contact structure according to claim 1, characterized in that the silicon substrate is an N-type crystalline silicon substrate.
3. The passivation contact structure of claim 1, wherein the dielectric layer is made of one or more of silicon oxide, aluminum oxide and chromium oxide; the thickness of the dielectric layer is 1-3.1 nm.
4. A passivation contact structure according to claim 3, characterized in that the thickness of the dielectric layer is 1.2-1.8 nm.
5. A battery comprising a passivation contact structure of the same polarity as that of any one of claims 1 to 4, a back passivation film provided on the surface of the passivation contact structure, a back metal electrode provided on the surface of the second polysilicon doped layer and extending beyond the back passivation film, and a p+ emitter provided on the front surface of the silicon substrate, a front passivation film provided on the surface of the p+ emitter, and a front metal electrode provided on the surface of the p+ emitter and extending beyond the front passivation film.
6. The cell of claim 5, wherein the front surface of the silicon substrate is a pyramid-shaped light trapping structure, and the p+ emitter is arranged on the surface of the light trapping structure; the back surface of the silicon substrate is of a planar structure.
7. A process for preparing a battery according to any one of claims 5 to 6, comprising the steps of:
step 1, preprocessing the silicon substrate to obtain a preprocessed silicon substrate;
step 2, preparing a p+ emitter on the front surface of the pretreated silicon substrate;
step 3, preparing a dielectric layer on the back of the pretreated silicon substrate;
step 4, preparing an amorphous silicon layer on the surface of the dielectric layer;
step 5, doping treatment is carried out on the surface of the amorphous silicon layer;
step 6, selectively doping the amorphous silicon layer by adopting silicon slurry containing doping atoms, then converting an amorphous structure of the amorphous silicon layer into an n+ polysilicon structure through heat treatment, and selectively diffusing part of doping atoms into the n+ polysilicon structure, so that the polysilicon structure forms polysilicon layers and first polysilicon doping layers alternately arranged on the surface of the dielectric layer, and simultaneously the silicon slurry containing the doping atoms forms a second polysilicon doping layer with doping concentration larger than that of the first polysilicon doping layer on the surface of the first polysilicon doping layer;
step 7, passivating the surfaces of the p+ emitter and the passivation contact structure to form a front passivation film on the surface of the p+ emitter and a back passivation film on the surface of the passivation contact structure;
and 8, carrying out metallization treatment on the p+ emitter and the second polysilicon doped layer to form a front metal electrode extending to the upper part of the front passivation film on the p+ emitter, and forming a back metal electrode extending to the lower part of the back passivation film on the second polysilicon doped layer, thus obtaining the battery with the passivation contact structure with the same polarity.
8. A process for preparing a battery according to claim 7, wherein,
in the step 1, the pretreatment method is alkali treatment or acid treatment; after pretreatment, the front surface of the silicon substrate is of a pyramid-shaped light trapping structure, and the back surface of the silicon substrate is of a planar structure;
in step 2, the step of preparing the p+ emitter on the front surface of the pretreated silicon substrate is as follows: boron diffusion is carried out on the front surface of the pretreated silicon substrate so as to prepare the p+ emitter;
in the step 6, the method for selectively doping the silicon paste containing the doping atoms is a screen printing method or an ink-jet method; the silicon slurry containing the doping atoms is silicon slurry containing phosphorus doping atoms.
9. The utility model provides a solar module, includes from top to bottom positive face material layer, positive encapsulation layer, battery, back encapsulation layer and back material layer that sets gradually, its characterized in that: the battery is a battery according to any one of claims 5 to 6.
10. A solar cell system comprising one or more solar cell modules, characterized in that: the solar cell module is a solar cell module according to claim 9.
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