CN113644142A - Solar cell with passivation contact and preparation method thereof - Google Patents
Solar cell with passivation contact and preparation method thereof Download PDFInfo
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- CN113644142A CN113644142A CN202110680700.XA CN202110680700A CN113644142A CN 113644142 A CN113644142 A CN 113644142A CN 202110680700 A CN202110680700 A CN 202110680700A CN 113644142 A CN113644142 A CN 113644142A
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
The invention provides a solar cell with passivation contact and a preparation method thereof, wherein the solar cell comprises a substrate, the back of the substrate is sequentially provided with a back tunneling oxide layer, a back passivation film and a back antireflection layer in a stacking manner, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in contact with the back passivation film; the front surface of the substrate is divided into a metal contact area and a nonmetal contact area, the metal contact area is sequentially provided with a front surface tunneling oxide layer, a front surface passivation film and a front surface antireflection layer in a stacking mode, a front surface metal grid line is formed on the surface of the front surface antireflection layer, and the front surface metal grid line is in passivation contact with the front surface passivation film. The solar cell effectively reduces the recombination of a metal-semiconductor interface of a contact region and improves the surface passivation performance, thereby greatly improving the open-circuit voltage and the filling factor of the cell and improving the cell performance.
Description
Technical Field
The invention belongs to the technical field of solar cells, and relates to a solar cell with passivation contact and a preparation method thereof.
Background
Solar energy is regarded as a renewable energy source and is valued worldwide from the beginning of the invention, recently, as existing energy sources such as petroleum and coal are expected to be exhausted, the interest of alternative energy sources for replacing the existing energy sources is growing, more and more solar cell power generation technologies are developed, as one of the fields with the fastest development in solar photovoltaic utilization, the technical development of crystalline silicon cells is spotlighted, but the market competition is insufficient due to the limitation of the cost, the method for solving the problem is technically innovative at the bottom, and people continuously develop and develop cell structures with more potential, optimize process procedures and further improve the benefits of the crystalline silicon cells.
Solar cells generally comprise: semiconductor components having different conductivity types, such as p-type and n-type, respectively, and thus forming a p-n junction; and electrodes respectively connected to the semiconductor parts of different conductivity types. When light is incident on the solar cell, a plurality of electron-hole pairs are generated in the semiconductor member and separated into electrons and holes. The electrons move to the n-type semiconductor member and the holes move to the p-type semiconductor member. Then, the electrons and holes are collected by different electrodes connected to the n-type semiconductor part and the p-type semiconductor part, respectively. The electrodes are connected to each other with electric wires, thereby obtaining electric energy.
With the rapid development of photovoltaic industrialization technology, each manufacturing link has technology update. The new technology and the new process bring lower cost and better product performance. However, the severe recombination of the metal-semiconductor interface at the contact region becomes a bottleneck in increasing the efficiency of the battery. The passivated contact solar cell is a next generation cell with high potential, and the breakthrough of product performance and cost is expected to be realized by reducing process changes as much as possible on the basis of the original production line.
CN105762234A discloses a tunneling oxide layer passivation contact solar cell, which includes a silicon wafer, a passivation tunneling layer, and a doped thin film silicon layer, wherein the passivation tunneling layer is between the silicon wafer and the doped thin film silicon layer, the doping concentration of the doped thin film silicon layer is not uniform, and the doping concentration of the doped thin film silicon layer adjacent to the passivation tunneling layer is less than the doping concentration of the doped thin film silicon layer far from the passivation tunneling layer.
CN105322042A discloses a solar cell and a method for manufacturing the same. The solar cell includes: a semiconductor substrate doped with impurities of a first conductivity type; a front surface field region located at a front surface of the semiconductor substrate and doped with impurities of the first conductive type at a higher concentration than the semiconductor substrate; a tunneling layer on a back side of the semiconductor substrate and formed of a dielectric material; an emitter region located at a first portion of a rear surface of the tunneling layer and doped with impurities of a second conductivity type opposite to the first conductivity type; and a back surface field region located at a second portion of the back surface of the tunneling layer and doped with impurities of the first conductive type at a higher concentration than the semiconductor substrate.
CN110911503A discloses a crystalline silicon solar cell and a manufacturing method thereof, wherein the solar cell comprises a substrate, and the substrate comprises a P-type silicon wafer, a top passivation layer, a tunneling layer and a bottom passivation layer. The tunneling layer is arranged on the bottom surface of the P-type silicon wafer and has hole transmission capacity; the bottom passivation layer is a boron-doped passivation layer disposed on a bottom surface of the tunneling layer.
In the existing solar cell, after screen printing and sintering, a metal electrode is directly contacted with a semiconductor body, so that the recombination rate is still high, and the difference between the current cell efficiency and the theoretical efficiency is still large. At present, in order to solve the contact problem of the metal electrode, a whole passivation layer of doped polycrystalline silicon is generally adopted to improve the contact performance of the electrode, but the doped polycrystalline silicon has strong light absorption characteristics, so that a part of incident light cannot be effectively utilized by the cell, the current density is reduced due to optical parasitic loss, and the power generation efficiency of the solar cell is reduced. Therefore, how to find a method for avoiding the optical parasitic loss caused by polysilicon while ensuring the good contact performance of the electrode is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a solar cell with a passivated contact and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a solar cell with passivation contact, which comprises a substrate, wherein a back tunneling oxide layer, a back passivation film and a back antireflection layer are sequentially stacked on the back of the substrate, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in contact with the back passivation film;
the front surface of the substrate is divided into a metal contact area and a nonmetal contact area, the metal contact area is sequentially provided with a front surface tunneling oxide layer, a front surface passivation film and a front surface antireflection layer in a stacking mode, a front surface metal grid line is formed on the surface of the front surface antireflection layer, and the front surface metal grid line is in passivation contact with the front surface passivation film.
The invention provides a solar cell with a double-sided passivation structure, wherein passivation contact structures are formed on two sides by utilizing a tunneling oxidation layer, so that the solar cell has a good surface passivation effect, and the passivation contact structures are arranged in the contact areas of a front metal grid line and a back metal grid line, so that the direct contact between metal and a silicon substrate is avoided, the surface recombination of the contact areas is reduced, and the cell conversion efficiency is improved. The solar cell provided by the invention effectively reduces the recombination of the metal-semiconductor interface of the contact region and improves the surface passivation performance, thereby greatly improving the open-circuit voltage and the filling factor of the cell and improving the cell performance.
As a preferable technical solution of the present invention, the front passivation film and the front non-metal contact region are sequentially stacked on the surface thereof with a phosphorus diffusion layer and a front anti-reflection layer.
As a preferable technical scheme of the invention, the front passivation film and the front non-metal contact area are sequentially laminated with a phosphorus diffusion layer, an oxidation layer and a front antireflection layer.
As a preferable technical scheme of the invention, the substrate is an n-type silicon wafer or a p-type silicon wafer.
As a preferred technical scheme of the invention, the front passivation film is a phosphorus-doped polycrystalline silicon layer.
As a preferred technical scheme of the invention, the back passivation film is a boron-doped polysilicon layer or SiCxOr MoOx。
As a preferred technical scheme of the invention, the back passivation film is a boron-doped polycrystalline silicon layer.
In a second aspect, the present invention provides a method for manufacturing the solar cell of the first aspect, the method comprising:
after polishing and texturing are carried out on a silicon wafer, a back tunneling oxide layer, a back passivation film and a back antireflection layer are sequentially prepared on the back of the silicon wafer, and a back metal grid line is printed on the surface of the back antireflection layer to form passivation contact between the back metal grid line and the back passivation film;
preparing a front tunneling oxide layer and a front passivation film on the front surface of a silicon wafer in sequence, shielding the front tunneling oxide layer and the front passivation film in a metal contact area, etching to remove the front tunneling oxide layer and the front passivation film in a non-metal contact area, preparing a front antireflection layer on the surfaces of the front passivation film and the non-metal contact area, and printing to form a front metal grid line on the surface of the front antireflection layer, so that the front metal grid line and the front passivation film are in passivation contact.
The preparation method provided by the invention does not need a complex back antireflection layer opening process, and can save a diffusion doping process at the same time, thereby preventing diffusion from influencing the service life of carriers of a high-quality substrate.
As a preferred technical solution of the present invention, the preparation method further comprises:
and performing phosphorus diffusion on the surfaces of the front passivation film and the nonmetal contact area, then forming a front surface field through annealing treatment, depositing a front antireflection layer on the surface of the front surface field, printing on the surface of the front antireflection layer to form a front metal grid line, and enabling the front metal grid line to be in passivation contact with the front passivation film.
As a preferred technical solution of the present invention, the preparation method further comprises:
and carrying out phosphorus diffusion on the front passivation film and the nonmetal contact area, sequentially depositing the surfaces of the front passivation film and the phosphorus diffusion layer to form an oxide layer and a front antireflection layer, printing the surface of the front antireflection layer to form a front metal grid line, and only contacting the front metal grid line with the front passivation film.
It should be noted that there are three parallel technical solutions within the protection scope defined by the present invention, specifically:
the first scheme is as follows: the solar cell provided by the scheme comprises a substrate, wherein a front tunneling oxide layer and a front doped polycrystalline silicon layer are sequentially stacked on a metal contact region on the front side of the substrate, a phosphorus diffusion layer (front surface field FSF) and a front antireflection layer are sequentially stacked on the surfaces of the front doped polycrystalline silicon layer and a nonmetal contact region, a front metal grid line is formed on the surface of the front antireflection layer, and the front metal grid line is in contact with the front doped polycrystalline silicon layer. The back surface of the substrate is sequentially provided with a back tunneling oxide layer, a back doped polycrystalline silicon layer and a back antireflection layer in a stacking mode, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in passivation contact with the back doped polycrystalline silicon layer.
Illustratively, based on the preparation method defined by the present invention, the preparation process of the solar cell provided in the first aspect comprises:
(1) using N-type monocrystalline silicon as a substrate, and using a mixed solution of KOH and a texturing additive to texture the N-type monocrystalline silicon;
(2) after hydrofluoric acid and RCA cleaning, preparing a back tunneling oxide layer with the thickness of 1-3 nm and a back doped amorphous silicon layer (boron doped amorphous silicon layer) with the thickness of 200-350 nm on the back of the silicon wafer, and performing annealing crystallization treatment at the temperature of not lower than 880 ℃ to convert the boron doped amorphous silicon layer into a boron doped polycrystalline silicon layer; carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface;
(3) after RCA cleaning, sequentially preparing a front tunneling oxide layer with the thickness of 1-3 nm and a front doped amorphous silicon layer (phosphorus doped amorphous silicon layer) with the thickness of 200-350 nm on the front of a silicon wafer, printing a barrier type slurry on the front of the silicon wafer (the barrier type slurry covers a metal contact area), and removing the front doped amorphous silicon layer in a non-printing area through alkali washing and texturing;
(4) after cleaning by hydrofluoric acid and RCA, performing phosphorus diffusion (front surface field FSF) on the phosphorus-doped amorphous silicon layer and the front surface, converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer, preparing an antireflection layer on the front surface, preparing a back antireflection layer on the surface of the boron-doped polycrystalline silicon layer, and performing screen printing and sintering on the surfaces of the front antireflection layer and the back antireflection layer respectively to obtain a front metal grid line and a back metal grid line.
Scheme II: the solar cell provided by the scheme comprises a substrate, wherein a front tunneling oxide layer and a front doped polycrystalline silicon layer are sequentially stacked on a metal contact region on the front surface of the substrate, a phosphorus diffusion layer, an oxide layer and a front antireflection layer are arranged on the surfaces of the front doped polycrystalline silicon layer and a nonmetal contact region, a front metal grid line is formed on the surface of the front antireflection layer, and the front metal grid line is in contact with a phosphorus doped polycrystalline silicon passivation layer. The back surface of the substrate is sequentially provided with a back tunneling oxide layer, a back doped polycrystalline silicon layer and a back antireflection layer in a stacking mode, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in passivation contact with the back doped polycrystalline silicon layer.
Illustratively, based on the preparation method defined by the present invention, the preparation process of the solar cell provided by scheme two can be briefly summarized as follows:
(1) using N-type monocrystalline silicon as a substrate, and using a mixed solution of KOH and a texturing additive to texture the N-type monocrystalline silicon;
(2) after hydrofluoric acid and RCA cleaning, preparing a back tunneling oxide layer with the thickness of 1-3 nm and a back doped amorphous silicon layer (boron doped amorphous silicon layer) with the thickness of 200-350 nm on the back of the silicon wafer, and performing annealing crystallization treatment at the temperature of not lower than 880 ℃ to convert the boron doped amorphous silicon layer into a boron doped polycrystalline silicon layer; carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface;
(3) after RCA cleaning, a front tunneling oxide layer with the thickness of 1-3 nm and a front doped amorphous silicon layer (phosphorus doped amorphous silicon layer) with the thickness of 200-350 nm are sequentially prepared on the front of the silicon wafer. And printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), and removing the front surface doped amorphous silicon layer of the non-printing area through alkaline washing and texturing. Phosphorus diffusion is carried out on the nonmetal contact area on the front side of the silicon chip, and meanwhile, the phosphorus-doped amorphous silicon layer is converted into a phosphorus-doped polycrystalline silicon layer through phosphorus diffusion;
(4) after cleaning by hydrofluoric acid and RCA, sequentially preparing an oxide layer and a front antireflection layer on the surfaces of the phosphorus-doped polycrystalline silicon layer and the phosphorus diffusion layer, preparing a back antireflection layer on the surface of the boron-doped polycrystalline silicon layer, and respectively performing screen printing and sintering on the surfaces of the front antireflection layer and the back antireflection layer to obtain a front metal grid line and a back metal grid line.
The third scheme is as follows: the solar cell provided by the scheme comprises a substrate, wherein a front tunneling oxide layer and a front doped polycrystalline silicon layer are sequentially stacked on a metal contact region on the front surface of the substrate, a front antireflection layer is arranged on the surfaces of the front doped polycrystalline silicon layer and a nonmetal contact region, a front metal grid line is formed on the surface of the front antireflection layer, and the front metal grid line is in contact with a phosphorus-doped polycrystalline silicon passivation layer. The back surface of the substrate is sequentially provided with a back tunneling oxide layer, a back doped polycrystalline silicon layer and a back antireflection layer in a stacking mode, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in passivation contact with the back doped polycrystalline silicon layer.
Illustratively, based on the preparation method defined by the present invention, the preparation process of the solar cell provided in the third aspect comprises:
(1) using N-type monocrystalline silicon as a substrate, and using a mixed solution of KOH and a texturing additive to texture the N-type monocrystalline silicon;
(2) after hydrofluoric acid and RCA cleaning, preparing a back tunneling oxide layer with the thickness of 1-3 nm and a back doped amorphous silicon layer (boron doped amorphous silicon layer) with the thickness of 200-350 nm on the back of the silicon wafer, and performing annealing crystallization treatment at the temperature of not lower than 880 ℃ to convert the boron doped amorphous silicon layer into a boron doped polycrystalline silicon layer; carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface;
(3) after RCA cleaning, a front tunneling oxide layer with the thickness of 1-3 nm and a front doped amorphous silicon layer (phosphorus doped amorphous silicon layer) with the thickness of 200-350 nm are sequentially prepared on the front of the silicon wafer. Printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), removing the front surface doped amorphous silicon layer of the non-printing area through alkali washing and wool making, and converting the phosphorus doped amorphous silicon layer into a phosphorus doped polycrystalline silicon layer through high-temperature treatment;
(4) after cleaning by hydrofluoric acid and RCA, preparing a front antireflection layer on the surface of the phosphorus-doped polycrystalline silicon layer and the non-metal contact area, preparing a back antireflection layer on the surface of the boron-doped polycrystalline silicon layer, and respectively performing screen printing and sintering on the surfaces of the front antireflection layer and the back antireflection layer to obtain a front metal grid line and a back metal grid line.
Specifically, the invention exemplarily provides a specific preparation process of the solar cell according to the first embodiment, which comprises the following steps:
(1) the method comprises the steps of using N-type monocrystalline silicon as a substrate, using a mixed solution of KOH and a texturing additive to conduct texturing on the N-type monocrystalline silicon, cleaning a textured silicon wafer through hydrofluoric acid and RCA, preparing a back tunneling oxide layer with the thickness of 1-3 nm and a boron-doped amorphous silicon layer with the thickness of 200-350 nm on the back of the silicon wafer, and using SiC or the likexOr MoOxDoping the amorphous silicon layer in place of boron;
(2) annealing and crystallizing at a temperature not lower than 880 ℃ to convert the boron-doped amorphous silicon layer into a boron-doped polycrystalline silicon layer;
(3) carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface (only the boron-doped polysilicon layer on the front surface is reserved); after RCA cleaning, sequentially preparing a front tunneling oxide layer with the thickness of 1-3 nm and a phosphorus-doped amorphous silicon layer with the thickness of 200-350 nm on the front of the silicon wafer;
(4) printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), and removing the front surface doped amorphous silicon layer of the non-printing area through alkaline washing and texturing;
(5) after being cleaned by hydrofluoric acid and RCA, phosphorus diffusion (front surface field FSF) is carried out on the phosphorus-doped amorphous silicon layer and the nonmetal contact area, and the phosphorus-doped amorphous silicon layer is converted into a phosphorus-doped polycrystalline silicon layer while a front surface field is prepared;
(6) preparing a front antireflection layer on the surface of the front surface field, and preparing a back antireflection layer on the surface of the boron-doped polycrystalline silicon layer;
(7) respectively carrying out screen printing and sintering on the surfaces of the front antireflection layer and the back antireflection layer to obtain a front metal grid line and a back metal grid line;
(8) sintering;
(9) and (5) hydrogen passivation treatment of the cell.
It should be noted that, in step (1), the boron-doped amorphous silicon layer may be an in-situ boron-doped amorphous silicon thin film or an intrinsic amorphous silicon thin film. If the film is an intrinsic amorphous silicon film, a doping source needs to be introduced from the outside subsequently, such as tubular gaseous source diffusion or spin coating doping source or ion implantation or screen printing boron paste. For the in-situ doped amorphous silicon film, high-temperature annealing is needed to activate the doped atoms, the annealing temperature is 800-1200 ℃, and the annealing time is 1-500 min. After high-temperature treatment, the amorphous silicon thin film is converted into a polycrystalline silicon thin film, and the thickness of the polycrystalline silicon thin film is 50-500 nm. The back tunneling oxide layer can be prepared by a high-temperature thermal oxidation method, a wet method or a strong oxidizing gas oxidation method, and the thickness of the back tunneling oxide layer is 0.5-5 nm.
In the step (3), the phosphorus-doped amorphous silicon layer may be an in-situ phosphorus-doped amorphous silicon thin film or an intrinsic amorphous silicon thin film. If the film is an intrinsic amorphous silicon film, a doping source needs to be introduced from the outside subsequently, such as tubular gaseous source diffusion or spin coating doping source or ion implantation or screen printing phosphor slurry. For the in-situ doped amorphous silicon film, high-temperature annealing is needed to activate the doped atoms, the annealing temperature is 800-1200 ℃, and the time is 1-500 min. After high-temperature treatment, the amorphous silicon thin film is converted into a polycrystalline silicon thin film, and the thickness of the polycrystalline silicon thin film is 50-500 nm. The front tunneling oxide layer can be prepared by a high-temperature thermal oxidation method, a wet method or a strong oxidizing gas oxidation method, and the thickness of the front tunneling oxide layer is 0.5-5 nm.
In the step (5), the method for preparing the front surface field includes: and (3) carrying out phosphorus diffusion in the front surface, and then carrying out annealing treatment in an oxygen atmosphere at 700-900 ℃, so as to form a surface field with the thickness of 1-20 nm.
In step (6), the front and back anti-reflection layers may be stacked or single SiN layerxThe thin film may be SiOxFilm, SiOxNyFilm and SiNxFilm any combination of three films. The front side antireflection layer and the back side antireflection layer can be deposited by Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or other thin film deposition methods. The thickness of the front antireflection layer or the back antireflection layer is 30-300 nm.
In step (9), hydrogen passivation may be performed by electrical injection, light injection, or heating.
It should be noted that the dimensional parameters and process parameters appearing in the exemplary description provided above do not constitute further limitations on the scope of the invention, but are merely preferred parameters set forth to assist those skilled in the art in better understanding the technical solutions of the present invention.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a solar cell with a double-sided passivation structure, wherein passivation contact structures are formed on two sides by utilizing a tunneling oxidation layer, so that the solar cell has a good surface passivation effect, and the passivation contact structures are arranged in the contact areas of a front metal grid line and a back metal grid line, so that the direct contact between metal and a silicon substrate is avoided, the surface recombination of the contact areas is reduced, and the cell conversion efficiency is improved. The solar cell provided by the invention effectively reduces the recombination of the metal-semiconductor interface of the contact region and improves the surface passivation performance, thereby greatly improving the open-circuit voltage and the filling factor of the cell and improving the cell performance.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a solar cell provided in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of a solar cell provided in embodiment 3 of the present invention.
Wherein, 1-a substrate; 2-back tunneling oxide layer; 3-doping a polysilicon layer on the back; 4-a back antireflection layer; 5-back metal grid line; 6-front side antireflection layer; 7-phosphorus diffusion layer-a (front surface field FSF); 8-doping a polysilicon layer on the front surface; 9-front tunneling oxide layer; 10-an oxide layer; 11-phosphorus diffusion layer-B; 12-front metal grid line.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
Example 1
The embodiment provides a solar cell, which is shown in fig. 1 and comprises a substrate 1, wherein a front tunneling oxide layer 9 (a silicon oxide layer) and a front doped polysilicon layer 8 (a phosphorus doped polysilicon layer) are sequentially stacked on a metal contact region on the front surface of the substrate 1, the thickness of the front tunneling oxide layer 9 is 2nm, and the thickness of the front doped polysilicon layer 8 is 200 nm. The front doped polycrystalline silicon layer 8 and the surface of the nonmetal contact area are sequentially laminated with a phosphorus diffusion layer-A (front surface field FSF)7 and a front antireflection layer 6, the thickness of the phosphorus diffusion layer-A (front surface field FSF)7 is 5nm, and the thickness of the front antireflection layer 6 is 50 nm. And a front metal grid line 12 is formed on the surface of the front antireflection layer 6, and the front metal grid line 12 is in contact with the front doped polycrystalline silicon layer 8.
The back surface of the substrate 1 is sequentially provided with a back tunneling oxide layer 2 (a silicon oxide layer), a back doped polycrystalline silicon layer 3 (a boron doped polycrystalline silicon layer) and a back antireflection layer 4 in a stacking mode, wherein the thickness of the back tunneling oxide layer 2 is 2nm, the thickness of the back doped polycrystalline silicon layer 3 is 200nm, and the thickness of the back antireflection layer 4 is 50 nm. And a back metal grid line 5 is formed on the surface of the back antireflection layer 4, and the back metal grid line 5 is in passivation contact with the back doped polycrystalline silicon layer 3.
Example 1 detailed procedure
This flow provides a method of fabricating the solar cell of embodiment 1, the method specifically including the steps of:
(1) the method comprises the following steps of (1) using N-type monocrystalline silicon as a substrate 1, texturing the N-type monocrystalline silicon by using a mixed solution of KOH and a texturing additive, cleaning a textured silicon wafer by using hydrofluoric acid and RCA, and preparing a back tunneling oxide layer 2 with the thickness of 2nm and a boron-doped amorphous silicon layer with the thickness of 200nm on the back of the silicon wafer;
(2) carrying out annealing crystallization treatment on the boron-doped amorphous silicon layer, wherein the annealing temperature is 1000 ℃, and the annealing time is 100min, so that the boron-doped amorphous silicon layer is converted into a boron-doped polycrystalline silicon layer;
(3) carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface (only the boron-doped polysilicon layer on the back surface is reserved); after RCA cleaning, a front tunneling oxide layer 9 with the thickness of 2nm and a phosphorus-doped amorphous silicon layer with the thickness of 200nm are sequentially prepared on the front of the silicon wafer;
(4) printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), and removing the front surface doped amorphous silicon layer of the non-printing area through alkaline washing and texturing;
(5) after being cleaned by hydrofluoric acid and RCA, phosphorus diffusion is carried out on the surfaces of the phosphorus-doped amorphous silicon layer and the nonmetal contact area, then annealing treatment is carried out in the oxygen atmosphere at 800 ℃, a phosphorus diffusion layer-A (front surface field FSF)7 with the thickness of 5nm is formed, and the phosphorus-doped amorphous silicon layer is converted into a phosphorus-doped polycrystalline silicon layer while the phosphorus diffusion layer-A (front surface field FSF)7 is prepared;
(6) preparing a front antireflection layer 6 (SiN) on the surface of a phosphorus diffusion layer-A (front surface field FSF)7 by adopting an atomic layer deposition methodxThin film) is doped with boron by plasma enhanced chemical vapor depositionPreparation of a backside anti-reflection layer 4 (SiN) on the surface of the polysilicon layerxA film);
(7) respectively carrying out screen printing and sintering on the surfaces of the front antireflection layer 6 and the back antireflection layer 4 to obtain a front metal grid line 12 and a back metal grid line 5;
(8) sintering;
(9) and (5) hydrogen passivation treatment of the cell.
Example 2
The embodiment provides a solar cell, which is shown in fig. 2 and comprises a substrate 1, wherein a front tunneling oxide layer 9 (a silicon oxide layer) and a front doped polysilicon layer 8 (a phosphorus doped polysilicon layer) are sequentially stacked on a metal contact region on the front surface of the substrate 1, the thickness of the front tunneling oxide layer 9 is 3nm, and the thickness of the front doped polysilicon layer 8 is 200 nm. The front doped polycrystalline silicon layer 8 and the surface of the nonmetal contact area are sequentially provided with a phosphorus diffusion layer-B11, an oxidation layer 10 and a front antireflection layer 6 in a stacking mode, the thickness of the oxidation layer 10 is 3nm, and the thickness of the front antireflection layer 6 is 100 nm. And a front metal grid line 12 is formed on the surface of the front antireflection layer 6, and the front metal grid line 12 is in contact with the front doped polycrystalline silicon layer 8.
The back surface of the substrate 1 is sequentially provided with a back tunneling oxide layer 2 (a silicon oxide layer), a back doped polycrystalline silicon layer 3 (a boron doped polycrystalline silicon layer) and a back antireflection layer 4 in a stacking mode, the thickness of the back tunneling oxide layer 2 is 3nm, the thickness of the back doped polycrystalline silicon layer 3 is 200nm, and the thickness of the back antireflection layer 4 is 100 nm. And a back metal grid line 5 is formed on the surface of the back antireflection layer 4, and the back metal grid line 5 is in passivation contact with the back doped polycrystalline silicon layer 3.
Example 2 detailed procedure
The embodiment provides a method for manufacturing a solar cell according to embodiment 2, which specifically includes the following steps:
(1) the method comprises the following steps of (1) using N-type monocrystalline silicon as a substrate 1, texturing the N-type monocrystalline silicon by using a mixed solution of KOH and a texturing additive, cleaning a textured silicon wafer by using hydrofluoric acid and RCA, and preparing a back tunneling oxide layer 2 with the thickness of 3nm and a boron-doped amorphous silicon layer with the thickness of 200nm on the back of the silicon wafer;
(2) carrying out annealing crystallization treatment on the boron-doped amorphous silicon layer, wherein the annealing temperature is 900 ℃ and the annealing time is 200min, so that the boron-doped amorphous silicon layer is converted into a boron-doped polycrystalline silicon layer;
(3) carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface (only the boron-doped polysilicon layer on the back surface is reserved); after RCA cleaning, a front tunneling oxide layer 9 with the thickness of 3nm and a phosphorus-doped amorphous silicon layer with the thickness of 200nm are sequentially prepared on the front of the silicon wafer;
(4) printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), removing the front surface doped amorphous silicon layer of the non-printing area through alkaline washing and texturing, and forming a textured surface on the non-printing area;
(5) after being cleaned by hydrofluoric acid and RCA, phosphorus diffusion is carried out on the nonmetal contact area on the front surface of the silicon chip to form a phosphorus diffusion layer-B11, and meanwhile, the phosphorus-doped amorphous silicon layer is converted into a phosphorus-doped polycrystalline silicon layer through phosphorus diffusion;
(6) removing PSG on the front surface of the silicon wafer, growing a silicon oxide film on the front surface, and growing an oxide layer 10 with the thickness of 3nm on the surfaces of the phosphorus-doped polycrystalline silicon layer 8 and the phosphorus diffusion layer-B11 by a high-temperature thermal oxidation method;
(7) preparing a front antireflection layer 6 (SiN) on the surface of the oxide layer 10 by adopting an atomic layer deposition methodxThin film), preparing a back antireflection layer 4 (SiN) on the surface of the boron-doped polycrystalline silicon layer by adopting a plasma enhanced chemical vapor deposition methodxA film);
(8) respectively carrying out screen printing and sintering on the surfaces of the front antireflection layer 6 and the back antireflection layer 4 to obtain a front metal grid line 12 and a back metal grid line 5;
(8) sintering;
(9) and (5) hydrogen passivation treatment of the cell.
Example 3
The embodiment provides a solar cell, which is shown in fig. 3 and includes a substrate 1, wherein a front side tunneling oxide layer 9 (a silicon oxide layer) and a front side doped polysilicon layer 8 (a phosphorus doped polysilicon layer) are sequentially stacked on a metal contact region on the front side of the substrate 1, the thickness of the front side tunneling oxide layer 9 is 2nm, and the thickness of the front side doped polysilicon layer 8 is 400 nm. The front side anti-reflection layer 6 is arranged on the surfaces of the front side doped polycrystalline silicon layer 8 and the nonmetal contact area, and the thickness of the front side anti-reflection layer 6 is 200 nm. And a front metal grid line 12 is formed on the surface of the front antireflection layer 6, and the front metal grid line 12 is in contact with the front doped polycrystalline silicon layer 8.
The back surface of the substrate 1 is sequentially provided with a back tunneling oxide layer 2 (a silicon oxide layer), a back doped polycrystalline silicon layer 3 (a boron doped polycrystalline silicon layer) and a back antireflection layer 4 in a stacking mode, wherein the thickness of the back tunneling oxide layer 2 is 2nm, the thickness of the back doped polycrystalline silicon layer 3 is 400nm, and the thickness of the back antireflection layer 4 is 200 nm. And a back metal grid line 5 is formed on the surface of the back antireflection layer 4, and the back metal grid line 5 is in passivation contact with the back doped polycrystalline silicon layer 3.
Example 3 detailed procedure
The embodiment provides a method for manufacturing a solar cell according to embodiment 3, which specifically includes the following steps:
(1) the method comprises the following steps of (1) using N-type monocrystalline silicon as a substrate 1, texturing the N-type monocrystalline silicon by using a mixed solution of KOH and a texturing additive, cleaning a textured silicon wafer by using hydrofluoric acid and RCA, and preparing a back tunneling oxide layer 2 with the thickness of 2nm and a boron-doped amorphous silicon layer with the thickness of 400nm on the back of the silicon wafer;
(2) annealing and crystallizing the boron-doped amorphous silicon layer at 1200 ℃ for 50min to convert the boron-doped amorphous silicon layer into a boron-doped polycrystalline silicon layer;
(3) carrying out single-sided HF cleaning on the front surface of the silicon wafer to remove a borosilicate glass layer (BSG layer) on the front surface, and then carrying out texturing treatment to remove a boron-doped polysilicon layer on the front surface (only the boron-doped polysilicon layer on the back surface is reserved); after RCA cleaning, a front tunneling oxide layer 9 with the thickness of 2nm and a phosphorus-doped amorphous silicon layer with the thickness of 400nm are sequentially prepared on the front of the silicon wafer;
(4) printing a barrier type slurry on the front surface of the silicon wafer (the barrier type slurry covers the metal contact area), removing the phosphorus-doped amorphous silicon layer in the non-printing area through alkaline washing and texturing, and forming a textured surface in the non-printing area;
(5) converting the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer through high-temperature treatment at 880 ℃;
(6) preparing a front antireflection layer 6 (SiN) on the surface of the phosphorus-doped polycrystalline silicon layer 8 and other front regions by adopting an atomic layer deposition methodxThin film), preparing a back antireflection layer 4 (SiN) on the surface of the boron-doped polycrystalline silicon layer by adopting a plasma enhanced chemical vapor deposition methodxA film);
(7) respectively carrying out screen printing and sintering on the surfaces of the front antireflection layer 6 and the back antireflection layer 4 to obtain a front metal grid line 12 and a back metal grid line 5;
(8) sintering;
(9) and (5) hydrogen passivation treatment of the cell.
The solar cells prepared in examples 1, 2 and 3 were tested for photoelectric conversion rate performance, and the testing method included:
the prepared solar cell is placed under an AM1.5 simulated light source (model of a light source simulator is Newport Oriel 94043A), and the energy density of the light source is 100mW/cm2The light source was calibrated using a standard crystalline silicon cell and the I-V curve of the solar cell was tested using FCT 650. The light is directly irradiated on the surface of the solar cell, and the effective area of the solar cell is 251.19cm2. The test results are shown in table 1.
TABLE 1
| Photoelectric conversion rate | Open circuit voltage | |
| Example 1 | 24.65％ | 0.725V |
| Example 2 | 24.8％ | 0.723V |
| Example 3 | 24.5％ | 0.722V |
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The solar cell with the passivation contact is characterized by comprising a substrate, wherein a back tunneling oxide layer, a back passivation film and a back antireflection layer are sequentially stacked on the back of the substrate, a back metal grid line is formed on the surface of the back antireflection layer, and the back metal grid line is in contact with the back passivation film;
the front surface of the substrate is divided into a metal contact area and a nonmetal contact area, the metal contact area is sequentially provided with a front surface tunneling oxide layer, a front surface passivation film and a front surface antireflection layer in a stacking mode, a front surface metal grid line is formed on the surface of the front surface antireflection layer, and the front surface metal grid line is in passivation contact with the front surface passivation film.
2. The solar cell of claim 1, wherein the front passivation film and the front non-metal contact region are sequentially stacked on the surface thereof with a phosphorus diffusion layer and a front anti-reflection layer.
3. The solar cell of claim 1, wherein the front passivation film and the front non-metal contact region have a phosphorus diffusion layer, an oxide layer and a front anti-reflection layer sequentially stacked on the front passivation film and the front non-metal contact region.
4. The solar cell according to any of claims 1-3, wherein the substrate is an n-type silicon wafer or a p-type silicon wafer.
5. The solar cell according to any of claims 1-4, wherein the front passivation film is a phosphorus doped polysilicon layer.
6. The solar cell according to any one of claims 1 to 5, wherein the rear passivation film is a boron-doped polysilicon layer, SiCxOr MoOx。
7. The solar cell of claim 6, wherein the backside passivation film is a boron-doped polysilicon layer.
8. A method for manufacturing a solar cell according to any one of claims 1 to 7, wherein the method comprises:
after polishing and texturing are carried out on a silicon wafer, a back tunneling oxide layer, a back passivation film and a back antireflection layer are sequentially prepared on the back of the silicon wafer, and a back metal grid line is printed on the surface of the back antireflection layer to form passivation contact between the back metal grid line and the back passivation film;
preparing a front tunneling oxide layer and a front passivation film on the front surface of a silicon wafer in sequence, shielding the front tunneling oxide layer and the front passivation film in a metal contact area, etching to remove the front tunneling oxide layer and the front passivation film in a non-metal contact area, preparing a front antireflection layer on the surfaces of the front passivation film and the non-metal contact area, and printing to form a front metal grid line on the surface of the front antireflection layer, so that the front metal grid line and the front passivation film are in passivation contact.
9. The method of claim 8, further comprising:
and performing phosphorus diffusion on the surfaces of the front passivation film and the nonmetal contact area, then forming a front surface field through annealing treatment, depositing a front antireflection layer on the surface of the front surface field, printing on the surface of the front antireflection layer to form a front metal grid line, and enabling the front metal grid line to be in passivation contact with the front passivation film.
10. The method of claim 8, further comprising:
and carrying out phosphorus diffusion on the front passivation film and the nonmetal contact area, sequentially depositing the surfaces of the front passivation film and the phosphorus diffusion layer to form an oxide layer and a front antireflection layer, printing the surface of the front antireflection layer to form a front metal grid line, and only contacting the front metal grid line with the front passivation film.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115084314A (en) * | 2022-06-10 | 2022-09-20 | 英利能源发展有限公司 | IBC solar cell preparation method of TOPCon passivation contact structure |
| CN115312624A (en) * | 2022-08-09 | 2022-11-08 | 扬州大学 | Preparation method of back contact solar cell |
| WO2023072165A1 (en) * | 2021-10-27 | 2023-05-04 | 天合光能股份有限公司 | Passivated contact solar cell |
| CN116156905A (en) * | 2023-04-21 | 2023-05-23 | 宁德时代新能源科技股份有限公司 | Functional layer, solar cell, and electricity device |
| WO2023093604A1 (en) * | 2021-11-23 | 2023-06-01 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method for solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023072165A1 (en) * | 2021-10-27 | 2023-05-04 | 天合光能股份有限公司 | Passivated contact solar cell |
| WO2023093604A1 (en) * | 2021-11-23 | 2023-06-01 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method for solar cell |
| CN115084314A (en) * | 2022-06-10 | 2022-09-20 | 英利能源发展有限公司 | IBC solar cell preparation method of TOPCon passivation contact structure |
| CN115312624A (en) * | 2022-08-09 | 2022-11-08 | 扬州大学 | Preparation method of back contact solar cell |
| CN115312624B (en) * | 2022-08-09 | 2024-02-09 | 扬州大学 | Preparation method of back contact solar cell |
| CN116156905A (en) * | 2023-04-21 | 2023-05-23 | 宁德时代新能源科技股份有限公司 | Functional layer, solar cell, and electricity device |
| CN116156905B (en) * | 2023-04-21 | 2023-10-03 | 宁德时代新能源科技股份有限公司 | Functional layer, solar cell, and electricity device |
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