CN115141036A - Graphite assembly and method of making the same - Google Patents
Graphite assembly and method of making the same Download PDFInfo
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- CN115141036A CN115141036A CN202210271271.5A CN202210271271A CN115141036A CN 115141036 A CN115141036 A CN 115141036A CN 202210271271 A CN202210271271 A CN 202210271271A CN 115141036 A CN115141036 A CN 115141036A
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
Abstract
A graphite assembly comprises a graphite substrate and at least one graphite film. The graphite film is arranged on the graphite substrate. Wherein the hardness of the graphite film is more than twice of the hardness of the graphite substrate. The invention has the advantages of improving the defects on the base material or the coating, inhibiting the generation of particles and improving the yield of the manufacturing process.
Description
Technical Field
The present invention relates to a process for maintaining high cleanliness required in industries of photoelectric and semiconductor, such as IC manufacturing, liquid crystal display panel, light emitting diode, micro electro mechanical system, solar panel, electronic paper, etc., and particularly to a graphite component used in any graphite component, especially ion implantation process, in photoelectric and semiconductor industries. The technology of the invention can form a graphite protective film with high hardness and low porosity on the surface of the graphite component, thereby improving the process yield and prolonging the service life of the graphite part.
Background
Graphite parts are widely used in various semiconductor processes, such as graphite crucibles, graphite carrier plates, and semiconductor ion implantation path components, due to their characteristics of high temperature resistance, high thermal conductivity, low expansion coefficient, etc. However, graphite powder is generally formed by die casting graphite powder and then machining the die cast graphite powder because the graphite has a very high melting point (about 3700 ℃). However, the loose structure of the graphite surface layer causes the graphite particles to fall off, and as the process continues to progress, the transistor size is continuously reduced, which means that the particle size is relatively continuously enlarged, and particle contamination may cause rework and even scrapping (Scap) of the subsequent film, etching and exposure processes. Therefore, the service life of the graphite component is prolonged, and the generation of micro dust is reduced, which is necessary for the development of the semiconductor process.
In the prior art, the yield of the process is improved by reducing the above problems of graphite components, and the prior art includes: high temperature halogen purification, CVD coating, or chemical synthesis glassy carbon coating, and the like.
The high-temperature halogen purification is to remove loose structures and impurities on the surface of graphite by means of high reactivity of halogen atmosphere at high temperature, and is a high environmental pollution process.
The CVD coating is to deposit a dense carbon film on the surface of the graphite component by using a CVD process, and although the method can effectively cover the loose structure of the graphite surface layer, the process cost is too high, and the CVD coating cannot be applied to the graphite component in large quantity at present.
The chemical synthesis glassy carbon coating is a compact glassy carbon coating formed on the surface of the graphite component by a chemical synthesis process and a high-temperature sintering method. Although the film produced by the method has high compactness and can effectively reduce the falling of surface layer dust, the process cost is high because the process is matched with high-temperature sintering, and the method cannot be widely applied to all graphite components.
In addition, a special coating layer of SiC is required to be introduced into the surface layer of the graphite component, and the compactness of the graphite component is improved by virtue of high physical and chemical resistance of the coating layer so as to improve the process yield. However, the cost of the related components is still very expensive because the plating of SiC passivation layer requires special processing equipment.
In view of the above, the inventors of the present invention have made intensive studies to develop and research a method for depositing a protective coating of graphite on a graphite substrate by low temperature spray coating, which can improve the performance of graphite components by improving the defects of the graphite substrate while maintaining the original advantages of graphite.
Disclosure of Invention
The present invention is directed to a graphite protective layer of a graphite component, which has the advantages of greatly improving the surface characteristics of the graphite component, having excellent adhesion, high hardness, high density, and the like, so as to inhibit the generation of particles on the surface of the graphite component during use, and improve the yield of the manufacturing process. Can be applied to any graphite component in the photoelectric and semiconductor industries.
To achieve the above objective, a graphite assembly is provided, which comprises a graphite substrate and at least one graphite film. The graphite film is arranged on the graphite substrate. Wherein the hardness of the graphite film is greater than that of the graphite substrate.
The graphite component is characterized in that the hardness of the graphite thin film is more than twice of the hardness of the graphite substrate.
The graphite component is characterized in that the porosity of the graphite film is smaller than that of the graphite substrate.
The graphite component is characterized in that the fine dust emissivity (particle emission rate) of the graphite film is smaller than that of the graphite substrate.
The graphite assembly is characterized in that the thickness of the graphite film is 5-50 um.
The graphite component described above is characterized in that the porosity of the graphite thin film is 15% or less of the porosity of the graphite base material.
The graphite component is characterized in that the surface roughness of the graphite film is more than 2 times smaller than that of the graphite substrate.
The graphite assembly is characterized in that the adhesion strength of the graphite thin film is more than 2 times of the adhesion strength of the graphite base material.
The graphite assembly is characterized in that the graphite film comprises a first graphite film and a second graphite film. The second graphite film has a hardness greater than that of the first graphite film.
The graphite assembly is characterized in that the graphite substrate has a rough surface with the roughness of 5 nm-10 um.
The present invention also provides a method of manufacturing a graphite assembly, comprising:
s10: mixing a plurality of graphite powder bodies into a bonding solution to form a graphite coating;
s20: coating the graphite coating on a graphite substrate to form a graphite film;
s30: placing the graphite film and the graphite substrate in an oxidation-resistant environment;
s40: carrying out low-temperature preheating treatment on the graphite film and the graphite substrate; and
s50: and carrying out heat treatment on the graphite film and the graphite substrate.
In the method for manufacturing the graphite component, in step S10, the average particle diameter of the graphite powder is less than 100nm.
In the method for manufacturing a graphite component, the adhesive solution is a volatile organic solvent in step S10.
In the method for manufacturing a graphite component, the oxidation-resistant atmosphere is a vacuum or an inert gas filled atmosphere in step S40.
The method for manufacturing the graphite component is characterized in that in step S50, the low-temperature preheating treatment is performed at a temperature of less than 250 ℃ for a baking time of 180 minutes or more.
In the method for manufacturing a graphite component, the heat treatment is performed at a temperature of 500 ℃ or higher and 1000 ℃ or lower for 120 minutes or longer in step S50.
The method for manufacturing the graphite assembly is characterized in that the inert gas is a group consisting of nitrogen, argon and helium.
The method for manufacturing the graphite component is characterized in that the anti-oxidation environment is vacuum, and the vacuum degree is 10 < -3 > to 10 < -5 > torr.
In the method for manufacturing a graphite component, the heat treatment is performed at a temperature of 150 to 500 ℃ in step S50.
The method for manufacturing a graphite component described above, further including, before step S20, step S11: the graphite substrate is pretreated to form a rough surface.
The method for manufacturing the graphite component is characterized in that the roughness of the rough surface is 5 nm-10 um.
The method for manufacturing the graphite component is characterized in that the pretreatment is sand blasting, plasma etching, grinding or laser.
The manufacturing method of the graphite assembly is characterized in that the pretreatment is sand blasting, the air pressure is 1-10 kg/cm < 2 >, and white alumina with the grain diameter of 63-89 mu m is selected as the sand.
The method for manufacturing the graphite component is characterized in that the pretreatment is plasma etching, the gas power is 180-300W, the gas is oxygen, and the gas flow is 60-100 sccm.
The method for manufacturing the graphite component is characterized in that the adhesion strength of the graphite thin film on the stone-grinding substrate after the pretreatment is higher than the adhesion strength of the graphite thin film on the stone-grinding substrate before the pretreatment.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It is to be noted that the components in the attached drawings are merely schematic and are not shown in actual scale.
Drawings
FIG. 1 is a schematic view of a graphite assembly according to a first embodiment of the present invention.
Fig. 2 shows a surface image of a graphite substrate.
Fig. 3 shows a surface image of the graphite thin film.
FIG. 4 is a schematic view of a graphite assembly according to a second embodiment of the present invention.
FIG. 5 is a surface image of a graphite component according to a second embodiment.
Fig. 6 shows a graphite assembly of a third embodiment.
FIG. 7 illustrates a method of manufacturing the graphite assembly of the present invention.
FIG. 8 is a schematic diagram showing a comparison of the concentrations of the particles emitted from the mote.
Detailed Description
In order to explain technical contents, structural features, objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, fig. 1 is a schematic view illustrating a graphite assembly according to a first embodiment of the present invention. The graphite assembly 100 of the present invention includes a graphite substrate 110 and at least one graphite film 120. The graphite film 120 is disposed on the graphite substrate 110, wherein the hardness of the graphite film 120 is greater than the hardness of the graphite substrate 110. In one embodiment, the hardness of the graphite film 120 is more than twice the hardness of the graphite substrate 110. And the graphite substrate 110 is made of a carbon-based material such as graphite, graphene, etc. In the present embodiment, the graphite substrate 110 is a graphite component used in an ion implanter (ion implanter) ion source of semiconductor processing equipment.
Furthermore, the graphite substrate 110 has a rough surface after a pretreatment, such as sand blasting, plasma etching, grinding or laser treatment, to form a rough surface with a roughness of 5nm to 10um. The rough surface is the contact surface between the graphite substrate 110 and the graphite thin film 120, and thus the adhesion strength between the graphite substrate 110 and the graphite thin film 120 can be improved. And the adhesion strength of the graphite thin film 120 on the stone substrate 110 after the pretreatment is greater than the adhesion strength of the graphite thin film 120 on the stone substrate 110 before the pretreatment.
The graphite thin film 120 is formed by applying a graphite coating material onto the graphite substrate 110 by means of low-temperature spray (inkjet). In other embodiments, the graphite coating can be applied to the graphite substrate 110 by spin coating, immersion, or the like.
Further, in the present embodiment, the graphite coating is prepared by uniformly mixing graphite powder with an average particle size of less than 100nm in a certain weight percentage to the adhesive solution. Then, the graphite coating was uniformly applied on the graphite substrate 110 using a nozzle to form a graphite thin film 120 having a thickness of 400 nm. In another embodiment, the graphite coating can be used to form the graphite film 120 with a thickness of 5-50 um corresponding to different heat treatment methods.
After the coating is finished, the graphite substrate 110 and the graphite film 120 are placed in a vacuum or inert gas environment, and then are preheated at a low temperature of below 250 ℃ for more than 180 minutes to volatilize the organic solvent, and simultaneously, the graphite powder is uniformly arranged into a compact film, and then are heat treated at a high temperature of above 500 ℃ for more than 120 minutes to enable the graphite powder to generate a sintering phenomenon, so that the graphite film 120 with high hardness and low porosity is combined.
In another embodiment, the graphite film 120 of 5-50 um is formed by graphite paint, the graphite substrate 110 and the graphite film 120 are placed in a vacuum or inert gas environment, and then heat treatment is performed at a temperature of 150-500 ℃. And an inert gas, such as nitrogen, argon, helium, or a combination thereof, may be injected during the thermal treatment.
In a preferred embodiment, the porosity of the graphite film of the heat-treated graphite film 120 is 15% or less of the porosity of the graphite substrate 110. The surface roughness of the graphite film 120 should be more than 2 times smaller than the roughness of the graphite substrate 110. The adhesion strength of the graphite thin film 120 is more than 2 times greater than that of the graphite substrate 110. And the fine dust emissivity (particle emission rate) of the graphite film 120 is smaller than that of the graphite substrate 110.
Referring to fig. 2 and 3, fig. 2 is a surface image of a graphite substrate, and fig. 3 is a surface image of a graphite thin film according to a first embodiment of the present invention, in which a film is formed on the graphite substrate in the above-described manner. Graphite powder with the average grain diameter of less than 100nm is mixed and dispersed in a specific adhesion solution, then a 400nm graphite film is sprayed on an ink base material in a spraying mode, and then the ink base material is baked for 4 to 6 hours at a pre-baking temperature of between 150 and 200 ℃ in a vacuum environment, and is subsequently baked for about 180 minutes in an oven at a baking temperature of 500 ℃. Fig. 2 and 3 are images taken by a Scanning Electron Microscope (SEM). As can be seen from fig. 2, the original graphite substrate 110 has more pores and higher porosity on the surface. As can be seen from fig. 3, after the graphite film 120 is covered, the pores of the graphite film 120 are obviously reduced, and the porosity is obviously reduced. The specific measurement result shows that the surface porosity of the graphite component is reduced to 0.47% from the original 9.61%. The graphite film 120 can also effectively improve the physical properties of the graphite component 100, and the measured hardness of the graphite substrate of the graphite film of the embodiment can be improved from 9.18HV to 25.49HV, which is 278%; the adhesion strength is improved from 9.67MPa to 24.75MPa. The cracking load (cracking load) was lifted from 7.29N to 24.75N.
In the present invention, the average particle size of the graphite powder, the spraying temperature and time, the pre-baking temperature and time, and the high-temperature heat treatment temperature and time may all affect the physical properties of the final graphite film. According to the spirit of the present invention, the smaller the average particle size of graphite, the longer the prebaking time, the higher the heat treatment temperature and the thicker the sprayed thickness of graphite, the lower the porosity, the higher the hardness and the stronger the adhesion strength of the formed graphite protective film.
Referring to fig. 4, fig. 4 is a schematic view of a graphite assembly according to a second embodiment of the present invention. In this embodiment, the graphite assembly 200 includes a graphite substrate 210 and a graphite film 220, and the features of the graphite substrate 210 are similar to those of the first embodiment, and therefore are not described herein again. The thickness of the graphite film 220 in the second embodiment is thicker than that in the first embodiment, and the average particle size of the graphite powder, the pre-baking condition and the heat treatment condition are further adjusted. Referring to fig. 5, fig. 5 is a surface image of a graphite component according to a second embodiment. As can be seen from fig. 5, the surface porosity of the graphite film 220 was further reduced to 0.05% by measuring the porosity of the graphite film 220. Furthermore, the graphite hardness is raised to 28.55HV; the adhesive strength is also improved to 25.79MPa.
Referring to fig. 6, fig. 6 is a schematic view of a graphite assembly according to a third embodiment. In the third embodiment, the graphite assembly includes a graphite substrate 310 and at least one graphite film 320, and the features of the graphite substrate 310 are similar to those of the first embodiment, and therefore are not described herein again. The third embodiment is characterized in that the number of the graphite films 320 is plural, and in this embodiment, the number of the graphite films is two. The graphite film 320 includes a first graphite film 320a and a second graphite film 320b, wherein the first graphite film 320a is disposed on the graphite substrate 310, and the second graphite film 320b is disposed on the first graphite film 320 a.
Further, the graphite coating materials of the first graphite film 320a and the second graphite film 320b are prepared by mixing graphite powders with different average particle sizes into the adhesive solution. The graphite coating material for the first graphite thin film 320a is graphite powder having an average particle size of 80 to 150nm, and the graphite coating material for the second graphite thin film 320b is graphite powder having an average particle size of 30 to 80 nm. And the hardness of the second graphite thin film 320b measured after adjusting the preheating condition and the heat treatment condition is greater than that of the first graphite thin film 320 a.
That is, the graphite component of the present invention may be coated with a plurality of layers of graphite films, and further, graphite films having different particle sizes and different adhesion solutions may be coated on a graphite substrate in a plurality of layers to adjust the surface characteristics of the graphite component.
In order to further improve the adhesion between the graphite substrate and the graphite film, the surface of the graphite substrate may be roughened to have a rough surface. The roughness of the rough surface is between 5nm and 10um.
Referring to fig. 7, fig. 7 illustrates a method of manufacturing the graphite assembly of the present invention. First, in step S10, graphite powder is mixed into a specific adhesive solution to form a graphite coating material. In step S10, nano-grade graphite powder is added to the adhesive solution in a predetermined weight percentage. Wherein the average grain diameter of the graphite powder is less than 100nm.
Then the solution is a volatile organic solvent, such as ethers, ether esters, alcohols, ketones: examples of the solvent include diethylene Glycol diethyl Ether (Bis (2-ethoxybutyl) Ether), ethylene Glycol Monobutyl Ether Acetate (Ethylene Glycol Monobutyl Ether Acetate), dipropylene Glycol methyl Ether (Propylene Glycol monomethylene Ether), and R-Butyrolactone (R-Butyrolactone). In a preferred embodiment, a Dispersant (Dispersant) can be added to the graphite coating material in step S10 to reduce agglomeration or caking of the graphite powder, and to uniformly distribute the graphite powder in the subsequent coating step.
In an embodiment, step S11 may be further performed to perform a pretreatment on the graphite substrate 110, so that the graphite substrate 110 forms a rough surface. Wherein the pretreatment is sand blasting, plasma etching, grinding or laser. In step S11, if the pretreatment is sand blasting, the air pressure is 1-10 kg/cm2, and the sand is white alumina with a particle size of 63-89 um. If the pretreatment is plasma etching, the gas power is 180-300W, the gas is oxygen, and the gas flow is 60-100 sccm. Through step S11, a rough surface having a roughness of 5nm to 10um may be formed on the graphite substrate 110.
Next, step S20 is performed to coat the graphite paint on the graphite substrate to form a preliminary graphite film, in which the graphite paint is coated on the graphite substrate by spraying. Then, step S30 is performed to place the graphite film and the graphite substrate in an oxidation-resistant environment, such as a vacuum environment or an environment filled with an inert gas (e.g., nitrogen, argon, helium, etc.), so as to prevent oxidation of the graphite. If the oxidation-resistant environment is vacuum, the vacuum degree is 10-3 to 10-5torr.
Next, step S40 is performed to perform a low-temperature preheating treatment on the graphite thin film and the graphite substrate, specifically, baking at a temperature of less than 250 ℃ for 180 minutes or more, where the low-temperature preheating treatment allows the adhesion solution to volatilize and allows the graphite powder to be uniformly arranged to form a denser graphite thin film. And step S50, performing heat treatment on the graphite film and the graphite substrate, specifically, performing heat treatment at a temperature of more than or equal to 500 ℃ and less than or equal to 1000 ℃, wherein the heat treatment time is more than or equal to 120 minutes, and the heat treatment can enable the graphite powder to generate a sintering phenomenon, so that the graphite powder is formed into the graphite film with high hardness and low porosity. Therefore, the baking process of steps S40 and S50 can effectively improve the physical properties of the graphite film. In another embodiment, the heat treatment in step S50 may also be performed at a temperature of 150 ℃ or higher and 500 ℃ or lower.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a comparison of the concentrations of the particles emitted from the motes. In fig. 8, a comparison of the concentration of particles of different sizes emitted by the three graphites, i.e. the degree of emission of the motes, is plotted. It can be seen that the concentration of particles emitted from the conventional graphite substrate is very high, and particularly, particles of 2um or less are very high. While the concentration of particles emitted can be greatly reduced by brushing (brushing) the graphite substrate, the concentration of particles below 2um is still high. The graphite component of the invention inhibits the particle concentration of 10um and 20um, and the particle concentration of 2um is also obviously reduced, thus greatly reducing the possibility that the graphite particles pollute the semiconductor component and improving the yield of the semiconductor process.
Compared with the prior solution (such as a glassy carbon coating, high-temperature halogen purification and CVD coating) for preventing the dust on the surface of the graphite from falling off, the graphite component and the graphite film have the environment-friendly and economic film coating, and the high-cost high-temperature sintering process required for synthesizing the glassy carbon coating is omitted; and the preparation of the high-density protective film for preventing the micro dust from falling off can be finished without using a high-temperature halogen furnace with high environmental pollution risk for processing.
The above-described embodiments are merely exemplary for convenience of description, and various modifications may be made by those skilled in the art without departing from the scope of the invention as claimed in the claims.
Claims (27)
1. A graphite assembly, comprising:
a graphite substrate; and
at least one graphite film arranged on the graphite substrate;
characterized in that the hardness of the graphite film is greater than the hardness of the graphite substrate.
2. The graphite assembly of claim 1, wherein the graphite film has a hardness of more than twice that of the graphite substrate.
3. The graphite assembly of claim 1, wherein the graphite film has a porosity less than a porosity of the graphite substrate.
4. The graphite assembly of claim 1, wherein the graphite film has a dust emissivity less than a dust emissivity of the graphite substrate.
5. The graphite assembly of claim 1, wherein the graphite film has a thickness of 5to 50um.
6. The graphite assembly of claim 3, wherein the graphite film has a porosity of less than 15% of the porosity of the graphite substrate.
7. The graphite assembly of claim 1, wherein the surface roughness of the graphite film is more than 2 times less than the roughness of the graphite substrate.
8. The graphite assembly of claim 1, wherein the adhesion strength of the graphite film is more than 2 times greater than the adhesion strength of the graphite substrate.
9. The graphite assembly of claim 1, wherein the graphite film comprises:
a first graphite film; and
and the hardness of the second graphite film is greater than that of the first graphite film.
10. The graphite assembly of claim 1, wherein the graphite substrate has a rough surface with a roughness of 5nm to 10um.
11. A method of manufacturing a graphite assembly comprising:
s10: mixing a plurality of graphite powder bodies into a bonding solution to form a graphite coating;
s20: coating the graphite coating on a graphite substrate to form a graphite film;
s30: placing the coated graphite substrate in an oxidation-resistant environment;
s40: carrying out low-temperature preheating treatment on the coated graphite substrate; and
s50: and carrying out heat treatment on the graphite film and the graphite substrate.
12. The method of claim 10, wherein in step S10, the average particle size of the graphite powder is less than 100nm.
13. The method of claim 10, wherein in step S10, the subsequent solution is a volatile organic solvent.
14. The method of manufacturing a graphite assembly according to claim 10, wherein in step S30, the oxidation-resistant atmosphere is a vacuum or an inert gas filled atmosphere.
15. The method of manufacturing a graphite assembly according to claim 10, wherein the low-temperature preheating treatment is baking at a temperature of less than 250 ℃ in step S40.
16. The method of claim 14, wherein the low temperature pre-heat treatment is performed wherein the baking time is 180 minutes or more.
17. The method of manufacturing a graphite assembly according to claim 10, wherein the heat treatment is baking at a temperature of 500 ℃ or higher in step S50.
18. The method of claim 10, wherein the heat treatment time is 120 minutes or more.
19. The method of manufacturing a graphite assembly of claim 13, wherein the inert gas is selected from the group consisting of nitrogen, argon, helium.
20. The method of making a graphite assembly of claim 13, wherein the oxidation resistant environment is a vacuum having a vacuum of 10 degrees -3 ～10 -5 torr。
21. The method for manufacturing a graphite component according to claim 13, wherein the heat treatment is performed at a temperature of 150 to 500 ℃ in step S50.
22. The method of manufacturing a graphite assembly according to claim 10, further comprising step S11 before step S20: the graphite substrate is pretreated to form a rough surface.
23. The method of claim 21, wherein the rough surface has a roughness of 5nm to 10um.
24. The method of claim 21, wherein the pre-treatment is sand blasting, plasma etching, grinding, or laser.
25. The method of manufacturing a graphite assembly according to claim 23, wherein the pretreatment is sand blasting and the air pressure is 1 to 10kg/cm 2 The sand is white alumina with the grain diameter of 63-89 um.
26. The method of claim 23, wherein the pre-treatment is plasma etching, the gas power is 180-300W, the gas is oxygen, and the gas flow rate is 60-100 seem.
27. The method of claim 21, wherein the adhesion strength of the graphite film on the graphite substrate after the pretreatment is greater than the adhesion strength of the graphite film on the graphite substrate before the pretreatment.
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88211152U (en) * | 1988-03-18 | 1988-11-30 | 南京工学院 | Low carbon pollution soi graphite heating component |
| US4816338A (en) * | 1986-06-10 | 1989-03-28 | Denki Kagaku Kogyo Kabushiki Kaisha | Glassy carbon-coated article |
| JPH02199012A (en) * | 1989-01-27 | 1990-08-07 | Ibiden Co Ltd | Graphite material coated with carbon film |
| CN101448380A (en) * | 2007-11-26 | 2009-06-03 | 久正光电股份有限公司 | Radiating base material |
| CN101660137A (en) * | 2009-09-11 | 2010-03-03 | 华东理工大学 | Pyrolytic graphite composite coating and applications thereof |
| CN102093081A (en) * | 2009-12-09 | 2011-06-15 | 中国科学院兰州化学物理研究所 | Adaptive graphite-like carbon-based film material for mechanical seal and preparation method thereof |
| US20130108863A1 (en) * | 2010-04-21 | 2013-05-02 | Entegris, Inc. | Coated Graphite Article And Reactive Ion Etch Manufacturing And Refurbishment Of Graphite Article |
| CN103770433A (en) * | 2012-10-18 | 2014-05-07 | 绿晶能源股份有限公司 | Artificial graphite heat radiation substrate and making method thereof |
| CN106083051A (en) * | 2016-06-15 | 2016-11-09 | 黄志良 | High conductive graphite heat dissipation film processing technology |
| TWI586722B (en) * | 2016-03-24 | 2017-06-11 | 中國鋼鐵股份有限公司 | Composite graphite substrate with porous surface and method of producing thereof |
| CN107686109A (en) * | 2017-07-17 | 2018-02-13 | 青岛超碳新材料科技有限公司 | A kind of preparation method of the double-deck carbon-based heat conduction film of high performance graphite graphene |
| CN109574670A (en) * | 2018-12-22 | 2019-04-05 | 中国平煤神马集团开封炭素有限公司 | A kind of preparation process of low hole impermeable graphite |
| CN109867523A (en) * | 2017-12-04 | 2019-06-11 | 比亚迪股份有限公司 | A kind of preparation method and high density carbon slide plate of high density carbon slide plate |
| CN109950543A (en) * | 2017-12-20 | 2019-06-28 | 天津国安盟固利新材料科技股份有限公司 | It is a kind of suitable for the collector of lithium ion battery electrode material and its preparation and application |
| CN111233515A (en) * | 2020-03-19 | 2020-06-05 | 北京晶龙特碳科技有限公司 | Method for preparing nano-graphite coating on surface of graphite product |
-
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Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816338A (en) * | 1986-06-10 | 1989-03-28 | Denki Kagaku Kogyo Kabushiki Kaisha | Glassy carbon-coated article |
| CN88211152U (en) * | 1988-03-18 | 1988-11-30 | 南京工学院 | Low carbon pollution soi graphite heating component |
| JPH02199012A (en) * | 1989-01-27 | 1990-08-07 | Ibiden Co Ltd | Graphite material coated with carbon film |
| CN101448380A (en) * | 2007-11-26 | 2009-06-03 | 久正光电股份有限公司 | Radiating base material |
| CN101660137A (en) * | 2009-09-11 | 2010-03-03 | 华东理工大学 | Pyrolytic graphite composite coating and applications thereof |
| CN102093081A (en) * | 2009-12-09 | 2011-06-15 | 中国科学院兰州化学物理研究所 | Adaptive graphite-like carbon-based film material for mechanical seal and preparation method thereof |
| US20130108863A1 (en) * | 2010-04-21 | 2013-05-02 | Entegris, Inc. | Coated Graphite Article And Reactive Ion Etch Manufacturing And Refurbishment Of Graphite Article |
| CN103770433A (en) * | 2012-10-18 | 2014-05-07 | 绿晶能源股份有限公司 | Artificial graphite heat radiation substrate and making method thereof |
| TWI586722B (en) * | 2016-03-24 | 2017-06-11 | 中國鋼鐵股份有限公司 | Composite graphite substrate with porous surface and method of producing thereof |
| CN106083051A (en) * | 2016-06-15 | 2016-11-09 | 黄志良 | High conductive graphite heat dissipation film processing technology |
| CN107686109A (en) * | 2017-07-17 | 2018-02-13 | 青岛超碳新材料科技有限公司 | A kind of preparation method of the double-deck carbon-based heat conduction film of high performance graphite graphene |
| CN109867523A (en) * | 2017-12-04 | 2019-06-11 | 比亚迪股份有限公司 | A kind of preparation method and high density carbon slide plate of high density carbon slide plate |
| CN109950543A (en) * | 2017-12-20 | 2019-06-28 | 天津国安盟固利新材料科技股份有限公司 | It is a kind of suitable for the collector of lithium ion battery electrode material and its preparation and application |
| CN109574670A (en) * | 2018-12-22 | 2019-04-05 | 中国平煤神马集团开封炭素有限公司 | A kind of preparation process of low hole impermeable graphite |
| CN111233515A (en) * | 2020-03-19 | 2020-06-05 | 北京晶龙特碳科技有限公司 | Method for preparing nano-graphite coating on surface of graphite product |
Non-Patent Citations (1)
| Title |
|---|
| （美）凯斯廷: "《合成聚合物膜 第2版》", 化学工业出版社, pages: 288 - 289 * |
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