TWI731785B - Method for refurbishing ceramic parts - Google Patents

Method for refurbishing ceramic parts Download PDF

Info

Publication number
TWI731785B
TWI731785B TW109130584A TW109130584A TWI731785B TW I731785 B TWI731785 B TW I731785B TW 109130584 A TW109130584 A TW 109130584A TW 109130584 A TW109130584 A TW 109130584A TW I731785 B TWI731785 B TW I731785B
Authority
TW
Taiwan
Prior art keywords
ceramic
layer
item
repairing
patent application
Prior art date
Application number
TW109130584A
Other languages
Chinese (zh)
Other versions
TW202210446A (en
Inventor
吳宗豐
劉金勳
李文亮
胡智愷
蘇修賢
Original Assignee
翔名科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 翔名科技股份有限公司 filed Critical 翔名科技股份有限公司
Priority to TW109130584A priority Critical patent/TWI731785B/en
Application granted granted Critical
Publication of TWI731785B publication Critical patent/TWI731785B/en
Publication of TW202210446A publication Critical patent/TW202210446A/en

Links

Images

Abstract

A method for refurbishing ceramic parts is provide in the present invention. The method includes the following steps: A gas is provided. A ceramic powder is provided. At least one energy source is provided at the broken place to trigger the gas. Sintering to deposit at least one layer of ceramic powder material is to achieve repair the broken place. The present invention can further extend the service life of the ceramic parts.

Description

陶瓷零件之修復方法 Repair method of ceramic parts

本發明係關於含陶瓷材料之零件、部品修復之技術領域,尤指應用於陶瓷層表面破損之修復方法。 The present invention relates to the technical field of repairing parts and parts containing ceramic materials, and particularly refers to a repair method applied to the surface damage of the ceramic layer.

隨著半導體技術的演進,半導體設備開始大量引進陶瓷材料,或陶瓷與其他非陶瓷材料例如金屬、高分子材料等之複合材料做為所需之零件,其中包括現行晶圓載具舉所採用之靜電吸盤。靜電吸盤應用於真空系統中使用非常廣泛,常用之半導體製程如化學氣相沉積(CVD)、物理氣相沉積(PVD)、反應離子蝕刻(RIE,Reactive Ion Etching)、面板及自動化設備運用等等均採用靜電吸盤之晶圓載具。然而在半導體設備中,特別是真空設備均因內部之物理或化學反應(如PVD、CVD、RIE反應),會對金屬表面產生嚴重之侵蝕作用,因此披覆於金屬層之陶瓷材料便成為下層金屬層很好的防護層,如圖1所示,即為一類似靜電吸盤之陶瓷與金屬複合材料之零件結構之示意圖。圖1中,陶瓷與金屬之複合材料零件1包括金屬的基座10、與金屬基座結合的陶瓷層11以及在陶瓷層11內的電極層12,為一典型且廣泛使用之陶瓷與金屬複合材料所製成之關鍵零件。但陶瓷層11本身也會因持續被高速離子轟擊或化學氣相反應氣體侵蝕而容易使表面平整度變差甚至產生局部破損現象,而使零件之效能降低,嚴重者必須汰換該零件增加生產成本。 With the evolution of semiconductor technology, semiconductor equipment has begun to introduce a large number of ceramic materials, or composite materials of ceramics and other non-ceramic materials such as metals, polymer materials, etc., as required parts, including the static electricity used in current wafer carriers. Sucker. Electrostatic chucks are widely used in vacuum systems. Commonly used semiconductor processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), reactive ion etching (RIE, Reactive Ion Etching), panel and automation equipment applications, etc. All wafer carriers using electrostatic chucks. However, in semiconductor equipment, especially vacuum equipment, due to internal physical or chemical reactions (such as PVD, CVD, RIE reactions), the metal surface will be severely corroded, so the ceramic material coated on the metal layer becomes the lower layer The metal layer is a good protective layer, as shown in Figure 1, which is a schematic diagram of the structure of a ceramic and metal composite material similar to an electrostatic chuck. In Figure 1, a ceramic and metal composite material part 1 includes a metal base 10, a ceramic layer 11 combined with the metal base, and an electrode layer 12 in the ceramic layer 11. It is a typical and widely used ceramic and metal composite Key parts made of materials. However, the ceramic layer 11 itself will also be prone to poor surface flatness or even partial damage due to continuous high-speed ion bombardment or chemical vapor reaction gas erosion, which will reduce the efficiency of the part. In severe cases, the part must be replaced to increase production. cost.

現階段對於表面已受破壞之陶瓷材料,一般採用研磨整平方式進行修復,但是這也造成陶瓷層11厚度會隨著修理次數而變薄,引發零件可靠度之問題。因此,傳統之修復方式使修復次數受到限制,且若陶瓷層11有破損情形就無法進行修復而報廢,增加使用者之成本。 At this stage, the surface of the ceramic material with damaged surface is generally repaired by grinding and leveling, but this also causes the thickness of the ceramic layer 11 to become thinner with the number of repairs, which causes the reliability of the parts. Therefore, the traditional repair method limits the number of repairs, and if the ceramic layer 11 is damaged, it cannot be repaired and is scrapped, which increases the user's cost.

因此,如何增加陶瓷材料或陶瓷複合材料之使用壽命成為業界研究開發的重點之一。 Therefore, how to increase the service life of ceramic materials or ceramic composite materials has become one of the focuses of research and development in the industry.

本發明係有關於陶瓷零件之修復方法。該方法包括以下步驟:在該陶瓷零件的一陶瓷層的一破損處提供至少一氣體;提供至少一陶瓷粉體;在破損的位置處借助於至少一能量源引發該氣體的反應;燒結沉積至少一層的該陶瓷粉體,形成一陶瓷沉積層,以達成修補作用。 The present invention relates to a repair method of ceramic parts. The method includes the following steps: providing at least one gas at a damaged location of a ceramic layer of the ceramic part; providing at least one ceramic powder; initiating a reaction of the gas at the damaged location by means of at least one energy source; sintering and depositing at least A layer of the ceramic powder forms a ceramic deposition layer to achieve a repairing effect.

本發明提供另一種陶瓷零件之修復方法,該陶瓷零件包括一陶瓷層表面,且該陶瓷層表面包括一破損處,該陶瓷零件之修復方法包括以下步驟:首先,去除該陶瓷層表面到至少該破損處之底部,以形成一整平表面;在該整平表面處提供至少一氣體;提供至少一陶瓷粉體;提供至少一能量源引發該氣體的反應;及燒結沉積至少一層的該陶瓷粉體,形成一陶瓷沉積層。 The present invention provides another method for repairing a ceramic part. The ceramic part includes a ceramic layer surface, and the ceramic layer surface includes a damaged part. The ceramic part repair method includes the following steps: First, remove the ceramic layer surface to at least the The bottom of the damaged part to form a flattened surface; provide at least one gas at the flattened surface; provide at least one ceramic powder; provide at least one energy source to initiate the reaction of the gas; and sinter and deposit at least one layer of the ceramic powder Body, forming a ceramic deposition layer.

在上述之陶瓷零件之修復方法,其中在該陶瓷層的破損處的進行表面處理。 In the above-mentioned repair method of ceramic parts, surface treatment is performed on the damaged part of the ceramic layer.

在上述之陶瓷零件之修復方法,其中,在該整平表面進行表面處理。 In the above-mentioned repairing method of ceramic parts, the surface treatment is performed on the flattened surface.

本發明所述的能量源為電漿熔射或雷射熔覆。 The energy source of the present invention is plasma spraying or laser cladding.

本發明所述的氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。 The gas in the present invention is selected from the group consisting of argon, hydrogen, nitrogen and helium.

本發明所述的陶瓷粉體是選自於氮化鋁、氧化鋁、氮化鈦及氧化釔所組成的群組。 The ceramic powder of the present invention is selected from the group consisting of aluminum nitride, aluminum oxide, titanium nitride and yttrium oxide.

本發明所述的陶瓷沉積層的厚度介於0.01mm~0.03mm之間。 The thickness of the ceramic deposition layer of the present invention is between 0.01 mm and 0.03 mm.

本發明中所述的表面處理包括清潔、粗化、預熱與黏結層處理至少一者。 The surface treatment in the present invention includes at least one of cleaning, roughening, preheating and bonding layer treatment.

本發明還包括,在修復過程中保持陶瓷零件的溫度於300℃以下。 The invention also includes maintaining the temperature of the ceramic parts below 300°C during the repair process.

本發明所述的陶瓷粉體的粒徑小於70μm。 The particle size of the ceramic powder of the present invention is less than 70 μm.

本發明還包括,對該陶瓷沉積層的表面進行整平之步驟。 The present invention also includes the step of leveling the surface of the ceramic deposition layer.

為讓本之上述特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following is a detailed description of preferred embodiments in conjunction with the accompanying drawings.

1:陶瓷與金屬複合材料零件 1: Ceramic and metal composite parts

10:基座 10: Pedestal

11:陶瓷層 11: Ceramic layer

12:電極層 12: Electrode layer

13:破損處 13: Damaged place

14:陶瓷層表面 14: Ceramic layer surface

15:陶瓷沉積層 15: Ceramic deposition layer

24:整平表面 24: Leveling the surface

S11~S14:步驟 S11~S14: steps

S21~S26:步驟 S21~S26: steps

圖1顯示為一陶瓷與金屬複合材料零件的側視圖;圖2A顯示為表面陶瓷層破損之陶瓷與金屬複合材料零件的側視圖;圖2B顯示為本發明的陶瓷零件之修復方法的流程圖。 Figure 1 shows a side view of a ceramic and metal composite part; Figure 2A shows a side view of a ceramic and metal composite part with a damaged surface ceramic layer; Figure 2B shows a flow chart of the repair method of the ceramic part of the present invention.

圖3顯示為靜陶瓷與金屬複合材料零件破損處表面處理後的局部放大側視圖;圖4顯示為修復後之陶瓷與金屬複合材料零件的側視圖。 Figure 3 shows a partial enlarged side view of the damaged part of the static ceramic and metal composite material after surface treatment; Figure 4 shows the side view of the ceramic and metal composite part after repair.

圖5顯示為本發明另一實施例的陶瓷零件之修復方法的流程圖。 Fig. 5 shows a flowchart of a method for repairing a ceramic part according to another embodiment of the present invention.

圖6A顯示為去除陶瓷層表面14到至少該破損處13之底部的示意圖。 FIG. 6A shows a schematic diagram of removing the surface 14 of the ceramic layer to at least the bottom of the damaged part 13.

圖6B顯示為形成一整平表面24的示意圖。 FIG. 6B shows a schematic diagram of forming a flattened surface 24.

圖6C顯示為修復後之陶瓷與金屬複合材料零件的側視圖。 Figure 6C shows a side view of the ceramic and metal composite part after repair.

為了能夠更清楚地描述本發明所提出之修復方式,以下將配合圖式,詳盡說明本發明之較佳實施例。 In order to be able to describe the repair method proposed by the present invention more clearly, the preferred embodiments of the present invention will be described in detail below in conjunction with the drawings.

圖1顯示為本實施例一陶瓷與金屬之複合材料零件之側視圖,陶瓷與金屬之複合材料零件1包括基座10、與基座10結合的陶瓷層11以及在陶瓷層11內的電極層12。 Figure 1 shows a side view of a ceramic and metal composite material part of this embodiment. The ceramic and metal composite material part 1 includes a base 10, a ceramic layer 11 combined with the base 10, and an electrode layer in the ceramic layer 11 12.

圖2A顯示為陶瓷與金屬複合材料零件於使用一段時間後陶瓷層11產生一破損處13。破損處13可能為受物理或化學侵蝕,如離子撞擊、化學氣相反應等、 刮傷、斷裂、缺角等等。請參閱圖2B,圖2B顯示為本發明的陶瓷零件之修復方法的流程圖。首先,請參閱步驟S11,提供至少一氣體,該氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。 FIG. 2A shows that the ceramic layer 11 has a damage 13 after a period of use of the ceramic and metal composite material part. The damage 13 may be physically or chemically corroded, such as ion impact, chemical vapor reaction, etc. Scratches, breaks, missing corners, etc. Please refer to FIG. 2B. FIG. 2B shows a flow chart of the repairing method of ceramic parts of the present invention. First, referring to step S11, at least one gas is provided, and the gas is selected from the group consisting of argon, hydrogen, nitrogen, and helium.

之後,請參閱步驟S12,提供至少一陶瓷粉體,用於修復陶瓷層11之陶瓷粉體可以是氮化鋁(AlN)、氧化鋁(Al2O3)、氮化鈦(TiN)、氧化釔(Y2O3)至少一種之組合其顆粒大小<70um,其所形成之陶瓷沉積層15厚度界於0.01mm-0.3mm之間,可為單層結構或複數層結構。 Afterwards, referring to step S12, at least one ceramic powder is provided. The ceramic powder used for repairing the ceramic layer 11 can be aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium nitride (TiN), oxide The particle size of at least one combination of yttrium (Y 2 O 3 ) is less than 70 um, and the thickness of the ceramic deposition layer 15 formed by it is between 0.01 mm and 0.3 mm, and it can be a single-layer structure or a multiple-layer structure.

圖3顯示為表面破損陶瓷層之局部放大圖,為了處理破損處13,即修復陶瓷層11上的缺陷,在修復前可先針對陶瓷層11與破損處13進行表面處理,該表面處理方式包括清潔,如酸洗、有機溶劑清洗等;粗化,如噴砂、砂磨等;預熱與黏結層處理等程序,其中清潔之目的,主要是為了去除不潔物,如雜質、灰塵、進行物理或化學反應時殘留之附著物等,以及表面較為脆弱之陶瓷結構。粗化程序能夠增加噴塗材料的附著面積以增進其附著力。預熱處理主要是將水氣烘乾,以提高塗層與陶瓷層11的鍵結,為避免金屬層與陶瓷層11間膨脹係數不一造成的應力效應,破壞金屬與陶瓷層11間之接合狀態,或導致零件之扭曲形變,較佳的預熱溫度為小於300℃,黏結層一般應用於陶瓷塗層與表面處理後之陶瓷層表面14或金屬基材間做為一層緩衝層,黏結層可為熔點較陶瓷粉體為低之陶瓷材料,如二氧化矽、矽酸鹽類等及其組合,主要目的為提高塗層與基材鍵結力,以及良好的封孔效果與抗氧化性。 Figure 3 shows a partial enlarged view of the damaged ceramic layer on the surface. In order to deal with the damaged part 13, that is, to repair the defect on the ceramic layer 11, the ceramic layer 11 and the damaged part 13 can be surface treated before the repair. The surface treatment methods include Cleaning, such as pickling, organic solvent cleaning, etc.; roughening, such as sandblasting, sanding, etc.; preheating and bonding layer treatment procedures, among which the purpose of cleaning is mainly to remove impurities, such as impurities, dust, and physical or Residual attachments during chemical reactions, and ceramic structures with fragile surfaces. The roughening process can increase the adhesion area of the sprayed material to improve its adhesion. The pre-heat treatment is mainly to dry the water vapor to improve the bond between the coating and the ceramic layer 11. In order to avoid the stress effect caused by the difference in expansion coefficient between the metal layer and the ceramic layer 11, the bond between the metal and the ceramic layer 11 is destroyed. State, or cause distortion and deformation of the part, the preferred preheating temperature is less than 300℃. The bonding layer is generally used as a buffer layer between the ceramic coating and the ceramic layer surface 14 or the metal substrate after surface treatment. It can be a ceramic material with a lower melting point than ceramic powder, such as silica, silicate, etc. and combinations thereof. The main purpose is to improve the bonding force between the coating and the substrate, as well as good sealing effect and oxidation resistance. .

之後,請參閱圖2B的步驟S13,在破損處13提供至少一能量源引發該氣體的反應。在上所述的能量源可以為電漿熔射或雷射熔覆,以電漿熔射為例:通常是以適當之氬氣(Ar)、氫氣(H2)、氮氣(N2)或氦氣(He)或其組合為陶瓷粉體之載體。 Afterwards, referring to step S13 of FIG. 2B, at least one energy source is provided at the damaged location 13 to initiate the reaction of the gas. The energy source mentioned above can be plasma spraying or laser cladding. Take plasma spraying as an example: usually suitable argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ) or Helium (He) or its combination is the carrier of ceramic powder.

請再次參閱圖2B及同時參閱圖4,圖4顯示為修復後之陶瓷與金屬複合材料零件的側視圖。在步驟S14中,是在破損處13燒結沉積至少一層的該陶瓷粉體以達成修補作用。具體來說,當陶瓷粉末與氣體同時噴出時,在高電壓下,氣體解離成離子狀態,產生極高的溫度,並將陶瓷粉體熔射於經表面處理後之陶瓷層表面14將破損處13填平。更詳細來說,在高溫下,陶瓷粉體與受損之陶瓷表面產生燒結作用,而形成一陶瓷沉積層15於經表面處理後之陶瓷層表面14,達到填補之目的。 Please refer to Fig. 2B again and Fig. 4 at the same time. Fig. 4 shows a side view of the repaired ceramic and metal composite part. In step S14, at least one layer of the ceramic powder is sintered and deposited at the damaged part 13 to achieve a repair effect. Specifically, when ceramic powder and gas are ejected at the same time, under high voltage, the gas dissociates into an ion state, generating extremely high temperature, and spraying the ceramic powder on the surface 14 of the ceramic layer after the surface treatment will be damaged. 13 fill up. In more detail, at high temperature, the ceramic powder and the damaged ceramic surface are sintered to form a ceramic deposition layer 15 on the surface of the ceramic layer 14 after the surface treatment to achieve the purpose of filling.

另外,上述雷射熔覆則是將高溫之雷射光源照射在經表面處理後之陶瓷層表面14,並將陶瓷粉體噴往破損處13,在高溫下,陶瓷粉體與受損之陶瓷表面產身燒結作用,而形成陶瓷沉積層15於經表面處理後之陶瓷層表面14,達到填補破損處13之目的。 In addition, the above-mentioned laser cladding is to irradiate a high-temperature laser light source on the surface of the ceramic layer 14 after the surface treatment, and spray the ceramic powder to the damaged place 13. At high temperature, the ceramic powder and the damaged ceramic The surface produces a sintering effect to form a ceramic deposition layer 15 on the surface 14 of the ceramic layer after the surface treatment, so as to achieve the purpose of filling the damaged area 13.

請再次參閱圖4,修復後之陶瓷金屬複合材料零件,其中破損處13已被陶瓷沉積層15填滿,為使修復後之陶瓷金屬複合材料零件表面更為平整,可將陶瓷沉積層15表面進一步整平,整平方式可包含,砂磨、拋光等步驟。 Please refer to Fig. 4 again. After repairing the ceramic-metal composite material part, the damaged part 13 has been filled with the ceramic deposition layer 15. In order to make the surface of the ceramic-metal composite material part after repairing more smooth, the surface of the ceramic deposition layer 15 can be Further leveling, the leveling method may include sanding, polishing and other steps.

請參考圖5,圖5顯示為本發明另一實施例的陶瓷零件之修復方法的流程圖,陶瓷零件之修復方法包括下列步驟:首先,請參閱步驟S21及同時參閱圖6A及圖6B,去除陶瓷層表面14到至少該破損處13之底部,以形成一整平表面24。詳細來說,陶瓷層11的破損處13只佔一個局部之區域,為了讓修復後之陶瓷層11其特性趨於一致,可將陶瓷層表面14一起去除至破損處13之底部,再加以整平,以形成一整平表面24。 Please refer to FIG. 5, which shows a flowchart of a method for repairing ceramic parts according to another embodiment of the present invention. The method for repairing ceramic parts includes the following steps: First, refer to step S21 and refer to FIGS. 6A and 6B at the same time. The ceramic layer surface 14 to at least the bottom of the damaged part 13 to form a flat surface 24. In detail, the damaged part 13 of the ceramic layer 11 only occupies a partial area. In order to make the characteristics of the repaired ceramic layer 11 become consistent, the surface 14 of the ceramic layer can be removed to the bottom of the damaged part 13 and then adjusted. Flat to form a flat surface 24.

之後,請參閱步驟S22,將整平表面24進行表面處理,該表面處理方式包括清潔,如酸洗、有機溶劑清洗等;粗化,如噴砂、砂磨等;預熱與黏結層處理等程序。 After that, referring to step S22, the leveled surface 24 is subjected to surface treatment. The surface treatment methods include cleaning, such as pickling, organic solvent cleaning, etc.; roughening, such as sandblasting, sanding, etc.; preheating and bonding layer treatment procedures .

之後,請參閱步驟S23,在該整平表面處提供至少一氣體,該氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。 After that, referring to step S23, at least one gas is provided on the flattened surface, and the gas is selected from the group consisting of argon, hydrogen, nitrogen, and helium.

之後,請參閱步驟S24,提供至少一陶瓷粉體,陶瓷粉體可以是氮化鋁(AlN)、氧化鋁(Al2O3)、氮化鈦(TiN)、氧化釔(Y2O3)至少一種之組合其顆粒大小<70um。 Afterwards, referring to step S24, at least one ceramic powder is provided. The ceramic powder can be aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium nitride (TiN), or yttrium oxide (Y 2 O 3 ). The particle size of at least one combination is less than 70um.

之後,請參閱步驟S25及同時參閱圖6C,提供至少一能量源引發該氣體的反應。其中,能量源可以為電漿熔射或雷射熔覆,該電漿熔射或該雷射熔覆之方法形成一陶瓷沉積層15於經表面處理後之陶瓷層表面14,均勻沉積陶瓷層至原先之厚度,達到填補之目的,最後進行表面之整平完成修復。 After that, referring to step S25 and FIG. 6C at the same time, at least one energy source is provided to initiate the reaction of the gas. Wherein, the energy source can be plasma spraying or laser cladding. The plasma spraying or laser cladding method forms a ceramic deposition layer 15 on the surface 14 of the ceramic layer after the surface treatment, and the ceramic layer is uniformly deposited To the original thickness, the purpose of filling is achieved, and finally the surface is leveled and repaired.

綜上,依據本發明之方法,陶瓷材料表面破損之處可被填平還原,有別於傳統整平方式每次皆要消耗陶瓷層厚度,且可做局部之修整,故採用本發明之方式,可大幅提高陶瓷零件或陶瓷複合零件之使用壽命。 In summary, according to the method of the present invention, the damaged surface of the ceramic material can be leveled and restored, which is different from the traditional leveling method which consumes the thickness of the ceramic layer each time and can be partially repaired. Therefore, the method of the present invention is adopted. , Can greatly increase the service life of ceramic parts or ceramic composite parts.

雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above in the preferred embodiment, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to those defined by the attached patent application scope.

S11~S14:步驟 S11~S14: steps

Claims (11)

一種陶瓷零件之修復方法,該陶瓷零件包括一基座,該基座的材質為金屬,該陶瓷零件之修復方法包括:在該陶瓷零件的一陶瓷層的一破損處提供至少一氣體,且該陶瓷層連結該基座;提供至少一陶瓷粉體;提供至少一能量源引發該氣體的反應;及燒結沉積至少一層的該陶瓷粉體,形成一陶瓷沉積層;在修復過程中,該陶瓷零件的溫度於300℃以下。 A method for repairing a ceramic part, the ceramic part includes a base, the material of the base is metal, and the repair method for the ceramic part includes: providing at least one gas at a damaged place of a ceramic layer of the ceramic part, and The ceramic layer is connected to the base; at least one ceramic powder is provided; at least one energy source is provided to initiate the reaction of the gas; and at least one layer of the ceramic powder is sintered to deposit at least one layer of the ceramic powder to form a ceramic deposition layer; during the repair process, the ceramic part The temperature is below 300℃. 一種陶瓷零件之修復方法,該陶瓷零件包括一陶瓷層及一基座,該陶瓷層連結該基座,該基座的材質為金屬,且該陶瓷層包括一破損處,該陶瓷零件之修復方法包括:去除該陶瓷層到至少該破損處之底部,以形成一整平表面;在該整平表面處提供至少一氣體;提供至少一陶瓷粉體;提供至少一能量源引發該氣體的反應;及燒結沉積至少一層的該陶瓷粉體,形成一陶瓷沉積層;在修復過程中,該陶瓷零件的溫度於300℃以下。 A method for repairing a ceramic part. The ceramic part includes a ceramic layer and a base, the ceramic layer is connected to the base, the base is made of metal, and the ceramic layer includes a damaged part. The repair method for the ceramic part The method includes: removing the ceramic layer to at least the bottom of the damaged area to form a flattened surface; providing at least one gas at the flattened surface; providing at least one ceramic powder; providing at least one energy source to initiate a reaction of the gas; And sintering and depositing at least one layer of the ceramic powder to form a ceramic deposition layer; in the repairing process, the temperature of the ceramic part is below 300°C. 如申請專利範圍第1項所述之陶瓷零件之修復方法,其中,在該破損處的表面進行表面處理。 The repair method of ceramic parts as described in item 1 of the scope of patent application, wherein surface treatment is performed on the surface of the damaged part. 如申請專利範圍第2項所述之陶瓷零件之修復方法,其中,在該整平表面進行表面處理。 The method for repairing ceramic parts as described in item 2 of the scope of patent application, wherein surface treatment is performed on the flattened surface. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,其中該能量源為電漿熔射或雷射熔覆。 Such as the repair method of ceramic parts described in item 1 or item 2 of the scope of patent application, wherein the energy source is plasma spraying or laser cladding. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,其中該氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。 The method for repairing ceramic parts as described in item 1 or item 2 of the scope of patent application, wherein the gas is selected from the group consisting of argon, hydrogen, nitrogen and helium. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,其中該陶瓷粉體是選自於氮化鋁、氧化鋁、氮化鈦及氧化釔所組成的群組。 The method for repairing ceramic parts as described in item 1 or item 2 of the scope of patent application, wherein the ceramic powder is selected from the group consisting of aluminum nitride, aluminum oxide, titanium nitride and yttrium oxide. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,其中,該陶瓷沉積層的厚度介於0.01mm~0.3mm之間。 Such as the method for repairing ceramic parts described in item 1 or item 2 of the scope of patent application, wherein the thickness of the ceramic deposition layer is between 0.01 mm and 0.3 mm. 如申請專利範圍第3項或第4項所述之陶瓷零件之修復方法,其中該表面處理包括清潔、粗化、預熱或黏結層處理。 For the repair method of ceramic parts described in item 3 or item 4 of the scope of patent application, the surface treatment includes cleaning, roughening, preheating or bonding layer treatment. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,其中該陶瓷粉體的粒徑小於70μm。 For the repair method of ceramic parts described in item 1 or item 2 of the scope of patent application, the particle size of the ceramic powder is less than 70 μm. 如申請專利範圍第1項或第2項所述之陶瓷零件之修復方法,還包括:對該陶瓷沉積層的表面進行整平。 The repairing method of ceramic parts as described in item 1 or item 2 of the scope of patent application further includes: leveling the surface of the ceramic deposition layer.
TW109130584A 2020-09-07 2020-09-07 Method for refurbishing ceramic parts TWI731785B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109130584A TWI731785B (en) 2020-09-07 2020-09-07 Method for refurbishing ceramic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109130584A TWI731785B (en) 2020-09-07 2020-09-07 Method for refurbishing ceramic parts

Publications (2)

Publication Number Publication Date
TWI731785B true TWI731785B (en) 2021-06-21
TW202210446A TW202210446A (en) 2022-03-16

Family

ID=77517554

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109130584A TWI731785B (en) 2020-09-07 2020-09-07 Method for refurbishing ceramic parts

Country Status (1)

Country Link
TW (1) TWI731785B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201742742A (en) * 2016-06-01 2017-12-16 國立清華大學 Three-dimensional selective repairing system, apparatus and application method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201742742A (en) * 2016-06-01 2017-12-16 國立清華大學 Three-dimensional selective repairing system, apparatus and application method thereof

Also Published As

Publication number Publication date
TW202210446A (en) 2022-03-16

Similar Documents

Publication Publication Date Title
TWI615506B (en) Plasma resistant coating layer and method of forming the same
WO2015151857A1 (en) Plasma-resistant component, method for manufacturing plasma-resistant component, and film deposition device used to manufacture plasma-resistant component
TW201719799A (en) Substrate support assembly with deposited surface features
CN105247662A (en) Plasma erosion resistant rare-earth oxide based thin film coatings
KR20130123821A (en) Plasma resistant coating layer, method of manufacturing the same and plasma resistant unit
JP2005240171A (en) Corrosion resistant member and its production method
US20200248316A1 (en) Method of manufacturing plasma-resistant coating film and plasma-resistant member formed thereby
TW201442991A (en) Surface treatment method and ceramic structure formed by the same
TW201841297A (en) Electrostatic sucker and manufacturing method thereof and plasma treatment device
TWI738455B (en) Method and product for processing electrostatic chuck using atomic layer deposition process, and operation method of plasma processing device
KR101005983B1 (en) Method for regenerating apparatus for plasma treatment, method for regenerating member inside container for plasma treatment, and apparatus for plasma treatment
JP3434947B2 (en) Shower plate
TWI731785B (en) Method for refurbishing ceramic parts
KR20180129156A (en) Method of Aerosol Deposition Coating for Plasma Resistant Coating
CN104241182A (en) Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device
JP3996039B2 (en) Method for manufacturing ceramic base material with metal spray coating
KR20130010557A (en) Hot plate of semiconductor manufacturing apparatus
CN113584421A (en) Method for enhancing bonding strength of yttrium oxide coating and substrate surface
KR20110117846A (en) Plasma resistant ceramic top coat with excellent stress relaxation and method of manufacturing the same
KR102356172B1 (en) Method for Producing Plasma-Resistant Coating Layer
CN218025871U (en) Graphite assembly
KR102535560B1 (en) Method for Producing Plasma-Resistant Coating Layer
KR102504152B1 (en) Masking structure and method for regenerating plasma etching electrode using the same
KR20190111263A (en) Surface treating method for controlling surface roughness of carbon material
CN116391062A (en) Method and apparatus for preventing component cracking using stress relief layers