CN114898915A - Circuit wire, manufacturing method of circuit wire and connector - Google Patents
Circuit wire, manufacturing method of circuit wire and connector Download PDFInfo
- Publication number
- CN114898915A CN114898915A CN202210614815.3A CN202210614815A CN114898915A CN 114898915 A CN114898915 A CN 114898915A CN 202210614815 A CN202210614815 A CN 202210614815A CN 114898915 A CN114898915 A CN 114898915A
- Authority
- CN
- China
- Prior art keywords
- circuit trace
- circuit
- connector
- graphene
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 230000008054 signal transmission Effects 0.000 claims description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 230000002500 effect on skin Effects 0.000 claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- CKAPSXZOOQJIBF-UHFFFAOYSA-N hexachlorobenzene Chemical compound ClC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl CKAPSXZOOQJIBF-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 238000002788 crimping Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 8
- 230000037431 insertion Effects 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910000906 Bronze Inorganic materials 0.000 description 4
- 239000010974 bronze Substances 0.000 description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 4
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- NWFNSTOSIVLCJA-UHFFFAOYSA-L copper;diacetate;hydrate Chemical compound O.[Cu+2].CC([O-])=O.CC([O-])=O NWFNSTOSIVLCJA-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/0045—Cable-harnesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/42—Insulated conductors or cables characterised by their form with arrangements for heat dissipation or conduction
- H01B7/428—Heat conduction
Abstract
The application provides a circuit wire, a manufacturing method of the circuit wire and a connector, wherein the circuit wire comprises a substrate and a coating which is arranged on the surface of the substrate in a covering mode, and the coating comprises graphene; the connector comprises the circuit trace. The application provides circuit is walked line and connector and can avoid transmission signal insertion loss to worsen, and can be right the base member in the circuit is walked line plays the guard action.
Description
Technical Field
The present application relates to the field of connector related technologies, and in particular, to a circuit trace, a method for manufacturing the circuit trace, and a connector.
Background
The copper substrate surface of the signal transmission line in the high-speed connector is generally plated with nickel or nickel and tin at the same time, but the skin depth of nickel at a frequency point of 3GHz is only 0.26um, while the skin depth of copper at the frequency point is 1.2um, and the skin depth of tin is 3.12 um. The existence of skin effect in high-speed signal transmission causes signals to be transmitted mainly on the surface layer of the circuit wiring, which means that at the same transmission frequency, surface nickel plating may cause the impedance of the circuit wiring section to be overall floated, thereby causing the insertion loss of the transmission path to be deteriorated.
Disclosure of Invention
An object of the present application is to provide a circuit trace avoiding signal loss, a method for manufacturing the circuit trace, and a connector.
In order to achieve the above purpose, the present application provides the following technical solutions:
a circuit wire comprises a substrate and a coating which is arranged on the surface of the substrate in a covering mode, wherein the coating comprises graphene.
In some embodiments of the present application, the substrate comprises copper, a copper alloy.
In some embodiments of the present application, the circuit trace includes a crimping region, a contact region and a routing region thereon, and the coating is disposed on a surface of the routing region in a covering manner.
In order to achieve the above purpose, the present application further provides a technical solution:
a manufacturing method of a circuit trace comprises the steps of dissolving a carbon source in an organic solvent to obtain a carbon source mixture, and heating the carbon source mixture by taking inert gas as carrier gas to grow graphene on a substrate to obtain the circuit trace.
In some embodiments of the present application, the substrate comprises copper, a copper alloy.
In some embodiments of the present application, the organic solvent comprises benzene.
In some embodiments of the present application, the carbon source comprises styrene, hexachlorobenzene, naphthalene, coronene.
In some embodiments of the present application, the heating temperature is 400 to 500 ℃.
In some embodiments of the present application, the inert gas comprises argon.
In order to achieve the above purpose, the present application further provides a technical solution:
a connector comprises the circuit wire.
In some embodiments of the present application, the transmission rate of the connector is greater than 56 Gbps.
In some embodiments of the present application, when the circuit trace generates a skin effect, the surface coating in the circuit trace becomes a signal transmission layer in the connector.
The beneficial effect of this application is:
1. the application provides a circuit trace and a connector applying the circuit trace, wherein a layer of graphene is covered on the surface of a trace area of the circuit trace, when the circuit trace and the connector work at a frequency point of 3GHz, the skin depth of the graphene layer is 20 micrometers, and the impedance of a signal transmission path can be ensured not to be floated when the skin effect occurs; the application provides circuit after this kind of special surface treatment walks line and high-speed connector can avoid transmission signal insertion loss to worsen to can be to the base member in the circuit is walked line plays the guard action.
2. The application provides a surface treatment method for removing wires in areas except a crimping area and a contact area from a signal wire of a high-speed connector, the treatment method comprises the steps of dissolving a carbon source by using an organic solvent to obtain a carbon source mixture, taking inert gas as carrier gas, and growing graphene on a substrate in a carbon source mixture heating mode to obtain the circuit wire.
3. The utility model provides a circuit walks the graphene materials that line surface was equipped with and has the characteristic of high electric conduction, high heat conduction, high strength to can be right in the production and processing process the circuit is walked the line and is played the guard action, has reduced wire, metal fillings, and then has avoided the risk of the connector inefficacy that leads to by reasons such as dimensional deviation.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a circuit trace;
FIG. 2 is a schematic structural relationship diagram of a substrate and a surface coating of a circuit trace;
fig. 3 is a graph comparing insertion loss for different coatings.
The main reference numbers in the drawings accompanying the present specification are as follows:
1-circuit routing; 2-a substrate; and 3-coating.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be mechanically coupled, directly coupled, indirectly coupled through intervening media, or may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The present application provides a circuit trace, a method for manufacturing the circuit trace, and a connector, which will be described in detail below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments of the present application. In the following embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to related descriptions of other embodiments for parts that are not described in detail in a certain embodiment.
Example 1
A circuit trace 1 comprises a substrate 2 and a coating 3 which is arranged on the surface of the substrate in a covering mode, wherein the coating 3 comprises graphene. Even when exposed to oxygen partial pressure of up to 10 -4 In the environment of mbar, the graphene can still provide a good protection effect for the metal matrix. Therefore, the graphene is used as a metal protective coating, so that the graphene can be prevented from contacting with corrosive or oxidative media, and a good protective effect is achieved on a substrate material; meanwhile, the graphene can also perform a passivation effect on the plating metal, so that the corrosion resistance of the coating is further improved. Tests show that the surface of the copper alloy of the chemical vapor deposition graphene is not obviously corroded after a neutral salt spray test for 48 hours, and the bare copper alloy generates obvious verdigris. In addition, the polymer coating commonly used for metal materials is easy to scratch, and the excellent mechanical property and tribological property of the graphene can improve the antifriction and wear-resistant properties of the material. When the circuit trace 1 works at a frequency point of 3GHz, the skin depth of the graphene layer is 20 μm, and the impedance of a signal transmission path can be ensured not to be floated when a skin effect occurs; the utility model provides a circuit walks the graphene materials that line surface was equipped with and has the characteristic of high electric conduction, high heat conduction, high strength, can be right in the production and processing process the circuit is walked the line and is played the guard action, has reduced wire, metal fillings, and then has avoided the risk of the connector inefficacy that leads to by reasons such as dimensional deviation. As shown in fig. 3, when the surface coating 3 is made of graphene, the loss index of the graphene is close to that of a circuit trace without a plating layer, the insertion loss index of the graphene is superior to that of a circuit trace without a plating layer, and the graphene has high strength, so that the graphene can protect the circuit trace well compared with the circuit trace without a plating layer, and the circuit trace is not prone to generating metal wires or metal wires due to scraping in the production and processing processesAnd (3) crumbs.
In some embodiments of the present application, the material of the substrate 2 includes copper, and an alloy of copper or other metals with good electrical conductivity and alloys thereof may also be used.
In some embodiments of the present application, the circuit trace 1 includes a differential signal circuit trace, and the function and function of the circuit trace 1 may also be set according to actual requirements.
In some embodiments of the present application, the surface coating 3 may also be fixed on the surface of the substrate 2 by physical vapor deposition, so as to achieve the same purpose of avoiding the problem that the impedance of the signal transmission path may be floated when the circuit trace is scratched and skin effect occurs.
In some embodiments of the present application, the circuit trace includes a crimping region, a contact region, and a routing region (not numbered), and the coating 3 is disposed on a surface of the routing region in a covering manner.
Example 2
A carbon source mixture is obtained by dissolving a carbon source in an organic solvent, and the carbon source mixture is heated by using an inert gas as a carrier gas to grow graphene on a substrate, so as to obtain the circuit trace 1 as described in embodiment 1.
In some embodiments of the present application, the substrate comprises copper, a copper alloy.
In some embodiments of the present application, the organic solvent comprises benzene, and other solvents having good compatibility with the carbon source may also be used.
In some embodiments of the present application, the carbon source comprises styrene, hexachlorobenzene, naphthalene, and hexachlorobenzene, wherein the hexachlorobenzene is adsorbed on the copper surface, the dehydrogenation becomes the crystal nucleus of graphene, and the slightly smaller large pi-bond benzene rings such as benzene, styrene, hexachlorobenzene, naphthalene, etc. are grown along the crystal nucleus of graphene in the pyrolytic arrangement on the copper surface, and then grown into a continuous graphene film layer.
In some embodiments of the present application, the heating temperature is 400 to 500 ℃; generally, chemical vapor deposition of graphene is to grow graphene on a copper foil substrate at 950-1050 ℃ and under normal pressure by taking CH4 as a carbon source and Ar as a carrier gas. Obviously, the method is difficult for bronze and brass materials, the mechanical strength of brass is not high enough and is not considered, the melting point of bronze is lower than 1000 ℃, the mechanical property of bronze changes even at about 300 ℃, the strengthening (tempering) heat treatment temperature of beryllium bronze is generally 320 ℃, and if the mechanical property is considered, the graphene deposition process above 300 ℃ cannot be adopted. However, the copper wire for signal transmission can be used for chemical vapor deposition of graphene at about 500 ℃.
Graphene is a layered planar structure formed by simple substances C, each C atom and surrounding C atoms form a regular hexagonal ring through 2sp hybridization, each C atom contributes to the rest p orbital electron to form a large pi bond, and pi electrons can move freely, so that the graphene has good conductivity. Single layer graphene is only 0.35nm thick, about twenty-ten-thousandths of the hair filament diameter. There are 2C atoms in each hexagonal structural unit of graphene because each C atom 1/3 belongs to the hexagon, the area of the hexagon is 0.052 square nanometers, and the density of graphene is 0.77 milligrams per square meter. The structure of graphene is very stable, and the carbon-carbon bond is only 1.42A. The connection between the carbon atoms in the graphene is flexible, and when external force is applied to the graphene, the carbon atom surface can be bent and deformed, so that the carbon atoms do not need to be rearranged to adapt to the external force, and the structure is kept stable. This stable lattice structure gives graphene excellent thermal conductivity. In addition, when electrons in graphene move in an orbit, scattering due to lattice defects or introduction of foreign atoms does not occur. Due to the fact that the interatomic force is very strong, even if the surrounding carbon atoms are extruded and collided at normal temperature, interference on electrons in the graphene is very small. Electrons are not easily scattered when moving in graphene, and the biggest characteristic of graphene is that the moving speed of electrons reaches 1/300 of the speed of light, which is far higher than that of electrons in a common conductor. This makes the properties of electrons, or more precisely, what should be called "charge carriers", in graphene very similar to relativistic mesogens.
The adhesion of the graphene on the surface of the copper metal is that an induction force is formed by conjugated large pi bonds and metal free electrons, and the large pi bonds and metal atoms further form partial combination between the metal bonds and covalent bonds in the process of forming the graphene on the surface of the metal in a chemical vapor deposition mode under a high temperature condition.
The graphene has high thermal stability and chemical stability, and a physical barrier layer is formed between the metal surface and an active medium, so that the passing of gas atoms such as water, oxygen and the like is effectively blocked; and moreover, a graphene film is formed at high temperature through chemical vapor deposition, a chemical bond which is partially in a state between a metal bond and a covalent bond is formed between a large pi bond of the graphene and a metal atom, so that the constraint of metal free electrons is increased, the electronic activity of the surface of copper metal is reduced, and the chemical property of the surface of copper is stabilized, namely the corrosion resistance is improved.
The realization of the low-temperature growth of the graphene at 500 ℃ has obvious engineering value for the graphene for the electric signal transmission on the surface of the copper alloy. Introducing artificial seeds containing benzene rings to assist low-temperature chemical vapor deposition growth, and pre-depositing coronene to control nucleation density and the size of finally prepared graphene.
In some embodiments of the present application, the inert gas comprises argon, which provides protection for the deposition process from oxidation and the like.
Example 3
A connector comprising a circuit trace 1 as described in embodiment 1. As shown in fig. 3, comparing the insertion loss indexes of different plating layers, it is obvious that the condition of the graphene plating layer approaches to a signal trace without a plating layer and the insertion loss index of the circuit trace 1 using the graphene is better than that of the nickel plating layer. Often walk line surface electrotinning in order to avoid the circuit that skin effect brought to walk line end impedance at the circuit and float high among the prior art, but the texture of tin itself is very soft, can have the circuit to walk the problem of line damage at high-speed connector component part production process, the wire can appear in the course of working, the metal fillings, and then bring risk and hidden danger such as short circuit for the connector, and the graphite alkene coating that this application adopted has good resistant scraping, stand wear and tear mechanical strength, can be fine overcome above-mentioned processing problem.
In some embodiments of the present application, the transmission rate of the connector is greater than 56 Gbps; and when the base body of the circuit wiring is made of copper, the upper limit of the transmission rate is the upper limit of the transmission of the copper base body. For a high-speed connector with a transmission rate larger than 56Gbps, the graphene is arranged on the surface of a signal circuit wire for transmitting differential signals, and when the skin effect of signal transmission occurs, the graphene thickness layer becomes a signal transmission layer, so that the impedance drift is avoided, and the insertion loss of signal transmission is improved.
In some embodiments of the present application, when the circuit trace generates a skin effect, the surface coating in the circuit trace becomes a signal transmission layer in the connector.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims. In addition, the principle and the implementation manner of the present application are explained by applying specific examples in the specification, the above description of the embodiments is only for helping understanding the method and the core idea of the present application, and the content of the present application should not be construed as limiting the present application.
Claims (12)
1. The circuit trace is characterized by comprising a substrate and a coating which is arranged on the surface of the substrate in a covering mode, wherein the coating comprises graphene.
2. The circuit trace of claim 1, wherein the base comprises copper, a copper alloy.
3. The circuit trace according to claim 1, wherein the circuit trace includes a crimping region, a contact region, and a trace region, and the coating is disposed on a surface of the trace region.
4. A method for manufacturing a circuit trace, wherein an organic solvent is used to dissolve a carbon source to obtain a carbon source mixture, an inert gas is used as a carrier gas, and the carbon source mixture is heated to grow graphene on a substrate, so as to obtain the circuit trace according to any one of claims 1 to 3.
5. The method for manufacturing a circuit trace according to claim 4, wherein: the substrate comprises copper and copper alloy.
6. The method for manufacturing a circuit trace according to claim 4, wherein: the organic solvent comprises benzene.
7. The method for manufacturing a circuit trace according to claim 4, wherein: the carbon source comprises styrene, hexachlorobenzene, naphthalene and hexachlorobenzene.
8. The method for manufacturing a circuit trace according to claim 4, wherein: the heating temperature is 400-500 ℃.
9. The method for manufacturing a circuit trace according to claim 4, wherein: the inert gas comprises argon.
10. A connector, characterized by: comprising a circuit trace as claimed in any one of claims 1 to 3.
11. The connector of claim 10, wherein: the transmission rate of the connector is greater than 56 Gbps.
12. The connector of claim 10, wherein: when the skin effect occurs to the circuit wire, the surface coating in the circuit wire becomes a signal transmission layer in the connector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210614815.3A CN114898915A (en) | 2022-05-31 | 2022-05-31 | Circuit wire, manufacturing method of circuit wire and connector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210614815.3A CN114898915A (en) | 2022-05-31 | 2022-05-31 | Circuit wire, manufacturing method of circuit wire and connector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114898915A true CN114898915A (en) | 2022-08-12 |
Family
ID=82726881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210614815.3A Pending CN114898915A (en) | 2022-05-31 | 2022-05-31 | Circuit wire, manufacturing method of circuit wire and connector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114898915A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560415A (en) * | 2012-01-20 | 2012-07-11 | 中国科学院上海硅酸盐研究所 | Three-dimensional graphene/metal line or metal wire composite structure and preparation method thereof |
| CN102593098A (en) * | 2012-02-27 | 2012-07-18 | 北京大学 | Metal interconnection structure of integrated circuit and preparation method for metal interconnection structure |
| CN102709155A (en) * | 2012-04-17 | 2012-10-03 | 北京大学 | Production method of metal inductor |
| US20130140058A1 (en) * | 2011-12-05 | 2013-06-06 | Ki II Kim | Graphene electrical wire and a method for manufacturing thereof |
| CN103208685A (en) * | 2013-04-12 | 2013-07-17 | 北京大学 | Corrosion-resistant electrode and manufacturing method and application thereof |
| CN103811095A (en) * | 2013-11-22 | 2014-05-21 | 许子寒 | Graphene wire cable conductor |
| CN104112916A (en) * | 2014-03-25 | 2014-10-22 | 苏州雷仕达电子科技有限公司 | Grounding body based on nano-conductive corrosion resistant coating |
| CN105741975A (en) * | 2014-12-08 | 2016-07-06 | 清华大学 | Graphene-coated energy-saving metal lead preparation method |
| CN113659365A (en) * | 2021-07-01 | 2021-11-16 | 上海航天科工电器研究院有限公司 | Low-short connector |
| CN113897591A (en) * | 2021-10-08 | 2022-01-07 | 北京石墨烯研究院 | Metal protection method and application |
-
2022
- 2022-05-31 CN CN202210614815.3A patent/CN114898915A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130140058A1 (en) * | 2011-12-05 | 2013-06-06 | Ki II Kim | Graphene electrical wire and a method for manufacturing thereof |
| CN102560415A (en) * | 2012-01-20 | 2012-07-11 | 中国科学院上海硅酸盐研究所 | Three-dimensional graphene/metal line or metal wire composite structure and preparation method thereof |
| CN102593098A (en) * | 2012-02-27 | 2012-07-18 | 北京大学 | Metal interconnection structure of integrated circuit and preparation method for metal interconnection structure |
| CN102709155A (en) * | 2012-04-17 | 2012-10-03 | 北京大学 | Production method of metal inductor |
| CN103208685A (en) * | 2013-04-12 | 2013-07-17 | 北京大学 | Corrosion-resistant electrode and manufacturing method and application thereof |
| CN103811095A (en) * | 2013-11-22 | 2014-05-21 | 许子寒 | Graphene wire cable conductor |
| CN104112916A (en) * | 2014-03-25 | 2014-10-22 | 苏州雷仕达电子科技有限公司 | Grounding body based on nano-conductive corrosion resistant coating |
| CN105741975A (en) * | 2014-12-08 | 2016-07-06 | 清华大学 | Graphene-coated energy-saving metal lead preparation method |
| CN113659365A (en) * | 2021-07-01 | 2021-11-16 | 上海航天科工电器研究院有限公司 | Low-short connector |
| CN113897591A (en) * | 2021-10-08 | 2022-01-07 | 北京石墨烯研究院 | Metal protection method and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11224130B2 (en) | Composite transparent conductors and methods of forming the same | |
| Andrés et al. | Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells | |
| US6083633A (en) | Multi-layer diffusion barrier for a tin coated electrical connector | |
| CN103367275B (en) | A kind of interface conducting strip and preparation method thereof, cooling system | |
| US20150187983A1 (en) | Method for forming a transparent conductive film with metal nanowires having high linearity | |
| US5468918A (en) | Conductive member for electric circuit and electric circuit body, and method for fabricating them | |
| CN102414874A (en) | Composite materials containing metallized carbon nanotubes and nanofibers | |
| Zhang et al. | Alloying and embedding of Cu-core/Ag-shell nanowires for ultrastable stretchable and transparent electrodes | |
| CN102121193B (en) | Carbon nanofiber-metal composite and method for preparing the same | |
| CN105325067A (en) | Conductive heat-dissipating sheet, and electrical parts and electronic devices comprising same | |
| TW201230913A (en) | Copper-clad laminate and method for manufacturing same | |
| Yang et al. | Superhydrophobic and corrosion-resistant electrospun hybrid membrane for high-efficiency electromagnetic interference shielding | |
| KR101905646B1 (en) | Low-temperature transfer method of graphene | |
| JP2009135097A (en) | Metal material for electric and electronic equipment, method of manufacturing metal material for electric and electronic equipment | |
| CN114898915A (en) | Circuit wire, manufacturing method of circuit wire and connector | |
| Kumar et al. | A review of the latest developments in the production and applications of Ag-nanowires as transparent electrodes | |
| Xu et al. | Single-walled carbon nanotube/copper core–shell fibers with a high specific electrical conductivity | |
| TWI312380B (en) | ||
| Wang et al. | Communication—Ag NW networks enhanced by Ni electroplating for flexible transparent electrodes | |
| US20140371562A1 (en) | Solderable flexible electrode and method for manufacturing same | |
| JP4137255B2 (en) | coaxial cable | |
| KR102500535B1 (en) | Hybrid transparent conductive electrode | |
| JP3322211B2 (en) | Composite gold plating film, method for producing the same, and electrical contact having the composite gold plating film | |
| CN202549338U (en) | Three-core twisted wire cable with shielding and sheath for aerospace | |
| CN108716114A (en) | A kind of preparation method of new copper/graphene/polymer composite fibrous |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |