CN114792750B - Full-color Micro-LED flip chip structure and preparation method thereof - Google Patents
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Abstract
The invention discloses a full-color Micro-LED flip chip structure and a preparation method thereof. According to the invention, the GaN nanopore structure is used as the quantum dot bearing layer, so that the problem of uneven distribution of quantum dots in the quantum dot film is avoided, and the intensity and purity of emergent light are effectively improved by using the scattering effect of the nanopore structure on light; in the preparation aspect, the uniformly distributed GaN nano-pore structure can be obtained by electrochemical corrosion in the LED epitaxial wafer in one step, so that the preparation period of the device is greatly shortened, and the process yield is greatly improved.
Description
Technical Field
The invention belongs to the technical field of Micro LED display, and particularly relates to a full-color Micro-LED flip chip structure. The invention also relates to a preparation method of the full-color Micro-LED flip chip structure.
Background
The Micro LED display technology is a display technology in which a self-luminous micron-sized LED is used as a light-emitting pixel unit and is assembled on a driving panel to form an LED array, and due to the characteristics of small size, high integration level, self-luminous property and the like, compared with the conventional LCD and OLED technologies, the Micro LED has greater advantages in brightness, contrast, resolution, energy consumption, response speed and the like, and is known as an ultimate display technology in the LED display industry. Although Micro LED display technology has significant advantages, there are still some technical bottlenecks in terms of full color, mass transfer, chip, etc. In a Micro LED full-color implementation scheme, a quantum dot color conversion method is generally adopted at present, the RGB three-color matching is realized by exciting a red or green quantum dot film on a glass substrate color conversion layer through a blue LED, and the quantum dot film formed by dispersing quantum dots in glue has the problems of poor dispersion uniformity of the quantum dots, low purity, low brightness and the like; the GaN nanopore array and the quantum dot mixed structure prepared by the nanoimprint technology are also reported to realize color conversion, but the nanopore array prepared by the nanoimprint technology needs to be transferred in a multilayer film layer by repeated photoetching and etching processes, so that the problems of complicated preparation process, low chip production efficiency and the like exist.
Disclosure of Invention
The invention aims to provide a full-color Micro-LED flip chip structure, which solves the problems of poor dispersion uniformity of quantum dots, low red-green brightness and low purity of the quantum dots in the conventional quantum dot film color conversion scheme.
The invention also aims to provide a preparation method of the full-color Micro-LED flip chip structure, which solves the problems of complicated process flow and low chip production efficiency of the existing nano-imprinting method.
The first technical scheme adopted by the invention is as follows: full-colorization Micro-LED flip chip structure comprises a GaN-based LED epitaxial wafer, three Micro LED mesa areas are arranged on the GaN-based LED epitaxial wafer in parallel, a rectangular groove area is arranged on each Micro LED mesa area, and a nanopore color conversion layer communicated with the three rectangular groove areas is embedded in the LED epitaxial wafer.
The first technical solution of the present invention is also characterized in that,
the GaN-based LED epitaxial wafer has the structure that:
a sapphire substrate polished on both sides;
a buffer layer grown on the sapphire substrate;
a first intrinsic GaN layer grown on the buffer layer;
an N-type GaN layer grown on the first intrinsic GaN layer;
a second intrinsic GaN layer grown on the N-type GaN layer;
a multiple quantum well light emitting layer grown on the second intrinsic GaN layer;
and a P-type GaN layer grown on the multiple quantum well light emitting layer.
The opening depths of the Micro LED mesa area and the rectangular groove area extend from the P-type GaN layer to 1/6 of the thickness of the N-type GaN layer.
The GaN-based LED epitaxial wafer is equally divided into three Micro LED rectangular areas which are arranged in parallel, three Micro LED mesa areas are respectively arranged in the three Micro LED rectangular areas, a deep isolation channel filled with light blocking materials is arranged between every two adjacent Micro LED rectangular areas, and the light blocking materials can be black epoxy resin.
The etching depth of the deep isolation channel extends from the P-type GaN layer to 5/6 of the thickness of the N-type GaN layer.
The nanopore color conversion layer comprises a nanopore structure arranged in an N-type GaN layer, the pore size of the nanopore structure is 50nm to 80nm, and red quantum dots and green quantum dots are respectively injected into two nanopore structures in three Micro LED rectangular areas.
An N-type electrode is arranged on the N-type GaN layer in each Micro LED rectangular area, a P-type electrode is arranged on the P-type GaN layer, the P-type electrode and the N-type electrode are respectively located on two sides of the rectangular groove area in the same Micro LED rectangular area, and the P-type electrode and the N-type electrode are made of Ti, ni and Au metals.
The GaN-based LED epitaxial wafer is evaporated with a first SiO exposed at the bottom of the rectangular groove region2Dielectric layer, first SiO2The thickness of the dielectric layer was 500nm.
The second technical scheme adopted by the invention is as follows: the preparation method of the full-colorized Micro-LED flip chip structure specifically comprises the following steps of:
the method comprises the following steps that 1, a buffer layer, a first intrinsic GaN layer, an N-type GaN layer, a second intrinsic GaN layer, a multi-quantum well light-emitting layer and a P-type GaN layer are sequentially grown on a sapphire substrate with double polished surfaces by utilizing Metal Organic Chemical Vapor Deposition (MOCVD) to form a GaN-based LED epitaxial wafer of the sapphire substrate;
step 4, evaporating first SiO with the thickness of 500nm on the GaN-based LED epitaxial wafer obtained in the step 3 by utilizing Plasma Enhanced Chemical Vapor Deposition (PECVD)2A dielectric layer; defining a first SiO by UV lithography2The opening area of the medium layer is not larger than the bottom area of the rectangular groove area, so that after ICP etching, the side wall of the rectangular groove area is etched by first SiO2Protecting the dielectric layer, wherein only the dielectric layer at the bottom of the rectangular groove region is etched to expose the N-type GaN layer;
The second technical solution of the present invention is also characterized in that,
and 7, respectively injecting the red quantum dots and the green quantum dots into the nano-pore structure by using spraying equipment in a rotary spraying manner.
The invention has the beneficial effects that: according to the full-color Micro-LED flip chip structure, full-color display of a Micro LED chip is completed through a nano-pore quantum dot color conversion scheme, the GaN nano-pore structure is used as a quantum dot bearing layer, the problem that quantum dots are distributed unevenly in a quantum dot film is solved, and the intensity and purity of emergent light are effectively improved by utilizing the scattering effect of the nano-pore structure on light. In the preparation aspect, the uniformly distributed GaN nano-pore structure can be obtained only by one-step GaN electrochemical corrosion, and the nano-pore structure can be directly prepared in the LED epitaxial wafer, so that the step of bonding the LED structure and the color conversion layer structure is omitted, the preparation period of the device is greatly shortened, and the process yield is greatly improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a single Micro LED rectangular region of a full-color Micro-LED flip chip structure of the present invention;
FIG. 2 is a top view of a full color Micro-LED flip chip structure of the present invention;
fig. 3 is a graph of the blue light excited red light spectrum in the nanopore quantum dot color conversion scheme of the invention and the prior quantum dot film color conversion scheme.
In the figure, 1, a sapphire substrate, 2, a buffer layer, 3, a first intrinsic GaN layer, 4, N type GaN layer, 5, a second intrinsic GaN layer, 6, a multi-quantum well luminous layer, 7, P type GaN layer, 8, a first SiO2The LED structure comprises a dielectric layer, 9.N type electrodes, 10.P type electrodes, 11 rectangular groove regions, 12 nanopore structures, 13.micro LED mesa regions, 14.micro LED rectangular regions, 15 deep isolation channels, 16.N type electrode contact holes, 17.P type electrode contact holes, 18 red quantum dots and 19 green quantum dots.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a full-color Micro-LED flip chip structure and a preparation method thereof, as shown in fig. 1 and fig. 2, taking the size of a Micro LED as 30um by 50um as an example, the specific implementation steps are as follows:
(1) After the sapphire substrate 1 with two polished surfaces is cleaned, growing a buffer layer 2, a first intrinsic GaN layer 3 (with the thickness of 0.5um to 1um), an N-type GaN layer 4 (with the thickness of 5 to 7um), a second intrinsic GaN layer 5 (with the thickness of 0.5um to 1um), a multi-quantum well light-emitting layer 6 MQWs and a P-type GaN layer 7 on the substrate in sequence by using MOCVD (metal organic chemical vapor deposition), and forming a GaN-based LED epitaxial wafer of the sapphire substrate;
(2) After the epitaxial wafer is cleaned, ultraviolet lithography and ICP etching lithography are sequentially used for etching a Micro LED mesa area 13 (a non-rectangular area with the size of 15/25um 35/45 um) and a rectangular groove area 11 (the size of 7um 20um) between two electrodes of the LED, the etching depth of the Micro LED mesa area 13 and the rectangular groove area 11 is 1.5um to 2um, the depth ensures that the N-type GaN layer 4 is exposed by etching, and the thickness etched above the N-type GaN layer 4 is 1/6 of the thickness of the N-type GaN layer 4 (shown in figure 1);
(3) Photoetching each Micro LED rectangular region 14 (with the size of 30um to 50 um) by using ultraviolet lithography, etching deep isolation channels 15 between the Micro LED rectangular regions 14 by using ICP (inductively coupled plasma), wherein the etching depth of each deep isolation channel 15 is 5um to 6um, the depth ensures that the N-type GaN layer 4 is not etched through, the thickness of the 1/6N-type GaN layer 4 at the bottom is reserved and is not etched, and the rest 1/6N-type GaN layer 4 is used as a current conduction layer of an electrochemical corrosion process; filling a light blocking material in the deep isolation channel 15, wherein the usable light blocking material is black epoxy glue;
(4) Evaporating first SiO with the thickness of 500nm on the epitaxial wafer structure by using PECVD2A dielectric layer;
(5) Sequentially using ultraviolet lithography and ICP etching lithography to etch and remove the first SiO covered above the rectangular groove region 112The dielectric layer 8 is removed in the area size of 5um to 13um, and the alignment precision required in the photoetching process meets the requirement of the first SiO on the side wall of the etched rectangular groove area 112The dielectric layer 8 is not etched, and only SiO in the area of 5um to 18um at the bottom of the rectangular groove area 112The dielectric layer is etched, and the N-type GaN epitaxial wafer is exposed;
(6) Placing the GaN-based LED epitaxial wafer subjected to the process into an anodic oxidation machine to perform GaN nanopore structure corrosion, wherein a corrosive solution is an oxalic acid solution, the concentration of oxalic acid can be selected to be 10% -80%, the N-type GaN layer 4 exposed from the bottom of the rectangular groove region 11 of each Micro LED mesa region 13 is corroded, a nanopore structure 12 extending to each Micro LED rectangular region 14 and penetrating through the whole N-type GaN layer 4 is finally formed by controlling corrosion voltage and time, the nanopore size is 50um to 80um (shown as 12 in FIG. 1), the corrosion voltage can be selected from 1V to 50V, and the corrosion time is determined according to the corrosion area and the corrosion depth;
(7) Sequentially using ultraviolet lithography and ICP etching to etch the first SiO film at 500nm2Photoetching and etching an N-type electrode contact hole 16 and a P-type electrode contact hole 17 (the hole diameter is 6 mu m) on the dielectric layer 8;
(8) Using ultraviolet lithography to photoetch an N-electrode region and a P-electrode region, using vacuum electron beam evaporation equipment (Ebeam) to evaporate Ti, ni and Au metal layers, and using negative glue metal stripping to prepare an N-type electrode 9 and a P-type electrode 10;
(9) Respectively photoetching two of the three Micro LED rectangular areas 14 by using ultraviolet lithography to serve as a red color conversion area and a green color conversion area, respectively injecting red quantum dots 18 and green quantum dots 19 into the nanopore structures 12 of the defined red color conversion area and green color conversion area by using spraying equipment in a rotary spraying mode, and enabling the quantum dots to enter the nanopore structures 12 from the rectangular groove area 11;
(10) Evaporating second SiO with the thickness of 200nm on the surface of the Micro LED by PECVD2A dielectric layer, which is etched to expose the N-type electrode 9 and the P-type electrode 10 sequentially by ultraviolet lithography and ICP etching lithography, and a 200nm second SiO covered by the rectangular groove region 112The dielectric layer is used to protect the quantum dots in the nanopore structure 12, so as to improve the stability and the lifetime of the quantum dots.
Through the mode, the full-color Micro-LED flip chip structure disclosed by the invention completes full-color display of a Micro LED chip through a nanopore quantum dot color conversion scheme. The existing full-color scheme transfers red, green and blue three-color Micro-LED light-emitting chips to a silicon-based driving circuit, but the scheme has a huge transfer technical bottleneck and cannot realize large-size screen manufacturing; there are also studies on the realization of full-color by preparing a color conversion layer using a quantum dot film, but this method has problems of low color purity and low color brightness. The invention adopts the nano-pore quantum dot color conversion technology, takes the GaN nano-pore structure as the quantum dot bearing layer, avoids the problem of uneven distribution of quantum dots in the quantum dot film, and can greatly increase the effective optical path and improve the light-emitting purity and brightness of red light and green light due to the unique scattering effect of the nano-pores. Fig. 3 is a comparison of the red-light spectrogram of the quantum dot film of the nanopore of the invention and the red-light spectrogram of the quantum dot film of the invention, wherein it can be seen that under the same test condition, the spectrogram of the quantum dot film shows a weak blue-light peak position, but the spectrogram of the invention does not have a blue-light peak position, which means that the purity of the red light excited by the blue light of the invention is obviously superior to that of the quantum dot film, and the red-light intensity of the invention is improved by about 20% compared with that of the quantum dot film.
The preparation method of the full-color Micro-LED flip chip structure improves the preparation efficiency of the existing nanopore array, and if a nano-imprint technology is used for preparing the GaN nanopore array, firstly, an insulating layer and a thin nickel layer are sequentially grown on an LED table top, then photoresist and ultraviolet curing glue are coated in a rotating mode, then the nanopore array is formed on the ultraviolet curing glue through a soft template, and then the nanopore array is sequentially transferred from the photoresist layer to the GaN layer from one layer through RIE, ICP and other etching processes for 5 times. According to the invention, the uniformly distributed GaN nano-pore structure can be obtained only by one-step GaN electrochemical corrosion, the nano-pore structure 12 can be directly prepared in the LED epitaxial wafer, the integration of the LED structure and the color conversion structure is realized, the step of bonding the LED structure and the color conversion layer structure is omitted, the device preparation period is greatly shortened, and the process yield is greatly improved.
Claims (6)
1. The full-color Micro-LED flip chip structure is characterized by comprising a GaN-based LED epitaxial wafer, wherein three Micro LED table areas (13) are arranged on the GaN-based LED epitaxial wafer in parallel, each Micro LED table area (13) is provided with a rectangular groove area (11), and a nanopore color conversion layer communicated with the three rectangular groove areas (11) is embedded in the LED epitaxial wafer;
the GaN-based LED epitaxial wafer has the structure that: the light emitting diode comprises a sapphire substrate (1), a buffer layer (2) growing on the sapphire substrate (1), a first intrinsic GaN layer (3) growing on the buffer layer (2), an N-type GaN layer (4) growing on the first intrinsic GaN layer (3), a second intrinsic GaN layer (5) growing on the N-type GaN layer (4), a multi-quantum well light emitting layer (6) growing on the second intrinsic GaN layer (5), and a P-type GaN layer (7) growing on the multi-quantum well light emitting layer (6);
the GaN-based LED epitaxial wafer is equally divided into three Micro LED rectangular areas (14) which are arranged in parallel, three Micro LED mesa areas (13) are respectively arranged in the three Micro LED rectangular areas (14), a deep isolation channel (15) filled with light blocking materials is arranged between every two adjacent Micro LED rectangular areas (14), and the light blocking materials are black epoxy resin;
the nanopore color conversion layer comprises a nanopore structure (12) arranged in an N-type GaN layer (4), and red quantum dots (18) and green quantum dots (19) are respectively injected into two nanopore structures (12) in three Micro LED rectangular regions (14);
the GaN-based LED epitaxial wafer is evaporated with first SiO exposed at the bottom of the rectangular groove region (11)2A dielectric layer (8).
2. The full-color Micro-LED flip-chip structure according to claim 1, wherein the Micro LED mesa region (13) and the rectangular trench region (11) are formed with a depth extending from the P-type GaN layer (7) down to 1/6 of the thickness of the N-type GaN layer (4).
3. The full-color Micro-LED flip-chip structure according to claim 1, wherein the etch depth of the deep isolation trench (15) extends from the P-type GaN layer (7) down to 5/6 of the thickness of the N-type GaN layer (4).
4. The full-color Micro-LED flip-chip structure according to claim 1, wherein an N-type electrode (9) is disposed on the N-type GaN layer (4) in each of the Micro LED rectangular regions (14), a P-type electrode (10) is disposed on the P-type GaN layer (7), and the P-type electrode (10) and the N-type electrode (9) are respectively located on two sides of the rectangular trench region (11) in the same Micro LED rectangular region (14).
5. The preparation method of the full-color Micro-LED flip chip structure is characterized by comprising the following steps:
the method comprises the following steps that 1, a buffer layer (2), a first intrinsic GaN layer (3), an N-type GaN layer (4), a second intrinsic GaN layer (5), a multi-quantum well light-emitting layer (6) and a P-type GaN layer (7) are sequentially grown on a sapphire substrate (1) to form a GaN-based LED epitaxial wafer;
step 2, three Micro LED mesa areas (13) and a rectangular groove area (11) on each Micro LED mesa area (13) are etched and etched on the GaN-based LED epitaxial wafer, and the etching depths of the Micro LED mesa areas (13) and the rectangular groove areas (11) extend downwards from the upper surface of the P-type GaN layer (7) to the position of 1/6 of the thickness of the N-type GaN layer (4);
step 3, three Micro LED rectangular regions (14) are photoetched on the GaN-based LED epitaxial wafer based on three Micro LED mesa regions (13), a deep isolation channel (15) is etched between two adjacent Micro LED rectangular regions (14), the etching depth of the deep isolation channel (15) extends downwards to the position with the thickness of 5/6 of the N-type GaN layer (4) from the upper surface of the P-type GaN layer (7), and light blocking materials are filled in the deep isolation channel (15);
step 4, evaporating a first SiO on the GaN-based LED epitaxial wafer obtained in the step 32A dielectric layer (8) defining a first SiO by UV lithography2The opening area of the dielectric layer (8) is not larger than the bottom area of the rectangular groove area (11), and the N-type GaN layer (4) is exposed;
step 5, corroding the N-type GaN layer (4) exposed from the bottom area of the rectangular groove area (11) by using electrochemical corrosive liquid, and controlling corrosion voltage and time to form a nanopore structure (12) with a corrosion area covering each Micro LED rectangular area (14) and penetrating the N-type GaN layer (4) deeply;
step 6, respectively photoetching and etching an N-type electrode contact hole (16) and a P-type electrode contact hole (17) on two sides of the rectangular groove region (11) on each Micro LED rectangular region (14) obtained in the step 5, and manufacturing an N-type electrode (9) and a P-type electrode (10) corresponding to the N-type electrode contact hole (16) and the P-type electrode contact hole (17);
step 7, respectively injecting red quantum dots (18) and green quantum dots (19) into the nano-pore structures (12) of the different Micro LED rectangular areas (14) obtained in the step 6 through the rectangular groove areas (11);
step 8, evaporating second SiO on the GaN-based LED epitaxial wafer obtained in the step 72And the dielectric layer is subjected to photoetching and etching to expose the N-type electrode (9) and the P-type electrode (10).
6. The method for preparing the full-color Micro-LED flip-chip structure according to claim 5, wherein the red quantum dots (18) and the green quantum dots (19) are respectively injected into the nano-pore structure (12) by means of spin coating by using a spraying device in the step 7.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010087235A (en) * | 2000-03-04 | 2001-09-15 | 서한영 | Forming method of quantum hole and light emitting device by using quantum dots and manufacturing method thereof |
| CN110112172A (en) * | 2019-05-22 | 2019-08-09 | 南京大学 | Based on panchromatic micron LED display chip of gallium nitride nanohole array/quantum dot mixed structure and preparation method thereof |
| CN110379897A (en) * | 2019-07-01 | 2019-10-25 | 东南大学 | III group-III nitride Quantum Well-metal-quantum dot mixed white light LED component |
| CN111326621A (en) * | 2020-04-03 | 2020-06-23 | 深圳雷曼光电科技股份有限公司 | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof |
| CN215342604U (en) * | 2021-05-27 | 2021-12-28 | 深圳市思坦科技有限公司 | LED chip structure and display module |
| CN215815879U (en) * | 2021-07-19 | 2022-02-11 | 深圳市思坦科技有限公司 | LED chip structure, display module and electronic equipment |
| CN216288506U (en) * | 2021-09-28 | 2022-04-12 | 深圳市思坦科技有限公司 | White light device and display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7777233B2 (en) * | 2007-10-30 | 2010-08-17 | Eastman Kodak Company | Device containing non-blinking quantum dots |
| CN104868023B (en) * | 2015-05-11 | 2018-02-16 | 南京大学 | III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof |
| US10593902B2 (en) * | 2017-09-29 | 2020-03-17 | University Of Central Florida Research Foundation, Inc. | Quantum dot light emitting devices (QLEDs) and method of manufacture |
| CN109768135B (en) * | 2018-12-27 | 2020-06-19 | 武汉大学 | Full-color stacked inverted RGB Micro-LED chip array and preparation method thereof |
| CN109935614B (en) * | 2019-04-09 | 2021-10-26 | 南京大学 | Micron full-color QLED array device based on deep silicon etching template quantum dot transfer process and preparation method thereof |
| CN110993762B (en) * | 2019-12-23 | 2020-12-01 | 南京大学 | Micro-LED array device based on III-group nitride semiconductor and preparation method thereof |
| CN114300602B (en) * | 2021-12-30 | 2024-04-02 | 深圳市思坦科技有限公司 | Full-color Micro-LED, preparation method thereof and display device |
| CN114792750B (en) * | 2022-06-24 | 2022-11-01 | 西安赛富乐斯半导体科技有限公司 | Full-color Micro-LED flip chip structure and preparation method thereof |
-
2022
- 2022-06-24 CN CN202210725705.4A patent/CN114792750B/en active Active
-
2023
- 2023-04-28 WO PCT/CN2023/091443 patent/WO2023246308A1/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010087235A (en) * | 2000-03-04 | 2001-09-15 | 서한영 | Forming method of quantum hole and light emitting device by using quantum dots and manufacturing method thereof |
| CN110112172A (en) * | 2019-05-22 | 2019-08-09 | 南京大学 | Based on panchromatic micron LED display chip of gallium nitride nanohole array/quantum dot mixed structure and preparation method thereof |
| CN110379897A (en) * | 2019-07-01 | 2019-10-25 | 东南大学 | III group-III nitride Quantum Well-metal-quantum dot mixed white light LED component |
| CN111326621A (en) * | 2020-04-03 | 2020-06-23 | 深圳雷曼光电科技股份有限公司 | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof |
| CN215342604U (en) * | 2021-05-27 | 2021-12-28 | 深圳市思坦科技有限公司 | LED chip structure and display module |
| CN215815879U (en) * | 2021-07-19 | 2022-02-11 | 深圳市思坦科技有限公司 | LED chip structure, display module and electronic equipment |
| CN216288506U (en) * | 2021-09-28 | 2022-04-12 | 深圳市思坦科技有限公司 | White light device and display device |
Non-Patent Citations (4)
| Title |
|---|
| "Application of porous GaN for microLED";Jie Song等;《proceedings of spie》;20201231;全文 * |
| "High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded quantum Dots";Yu-Ming Huang等;《nanomaterials》;20211013;正文第1-7页，图1 * |
| "Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN";Jie Song等;《Applied electronic materials》;20211029;全文 * |
| Yu-Ming Huang等."High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded quantum Dots".《nanomaterials》.2021,正文第1-7页，图1. * |
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Denomination of invention: Full color Micro LED flip chip structure and preparation method Effective date of registration: 20230828 Granted publication date: 20221101 Pledgee: China Construction Bank Corporation Xi'an Chang'an Road Branch Pledgor: XI'AN SAIFULESI SEMICONDUCTOR TECHNOLOGY CO.,LTD. Registration number: Y2023980054100 |