CN114914267B - Repairable full-size full-color LED chip and preparation method thereof - Google Patents
Repairable full-size full-color LED chip and preparation method thereof Download PDFInfo
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- CN114914267B CN114914267B CN202210484556.7A CN202210484556A CN114914267B CN 114914267 B CN114914267 B CN 114914267B CN 202210484556 A CN202210484556 A CN 202210484556A CN 114914267 B CN114914267 B CN 114914267B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 239000000741 silica gel Substances 0.000 claims abstract description 9
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 9
- 239000002096 quantum dot Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a repairable full-size full-color LED chip, which comprises a blue LED chip, transparent silica gel, a barrier layer and a nanopore NP layer, wherein the blue LED chip, the transparent silica gel, the barrier layer and the nanopore NP layer are sequentially arranged from bottom to top; the invention also discloses a preparation method of the repairable full-size full-color LED chip. The repairable full-size full-color LED chip and the preparation method thereof can realize full colorization from large-size Micro to Mini small-size chips, and simultaneously, the added blank pixel position is used as a substitute pixel of red, blue and green, so that damage caused by the process can be greatly avoided, and the yield of the chip is improved.
Description
Technical Field
The invention belongs to the technical field of full-color LED display, and particularly relates to a repairable full-size full-color LED chip. The invention also relates to a preparation method of the repairable full-size full-color LED chip.
Background
Compared with other display technologies such as LCD and OLED, the LED serving as a long-life and energy-saving display technology is mainly characterized in that an inorganic quantum well serving as a luminous source is more stable and flexible.
The traditional LED chip is a single blue light color device, in full-color LED display, the current mainstream process adopts a blue light LED as an excitation light source to excite quantum dots, can reach the BT.2020 standard, and has a great application prospect. The sub-pixels form green light and red light by blue light conversion through a light conversion material, so that red, green and blue sub-pixels are formed. The quantum dots emit extremely narrow spectrum, so the color gamut is higher and more abundant colors can be generated.
An LED based on a quantum dot technology is a product with great potential, but the minimum size of a traditional LED chip only reaches ten microns, and a good display effect is difficult to achieve in the field of AR/VR with extremely small size, the full colorization of the chip size below 10um is difficult to achieve, and meanwhile, the yield is difficult to improve due to process reasons.
Disclosure of Invention
The invention aims to provide a repairable full-size full-color LED chip, which solves the problems that the existing LED chip has full color below 10um and the yield is difficult to be obtained simultaneously.
The invention also aims to provide a preparation method of the repairable full-size full-color LED chip.
The first technical scheme adopted by the invention is as follows: full-color LED chip of full-size that can repair includes blue light LED chip, transparent silica gel, barrier layer and the nanopore NP layer that sets gradually from bottom to top, is equipped with the red, green, blue, blank four sub-pixel district of regular arrangement on the nanopore NP layer.
The first technical solution of the present invention is also characterized in that,
the red, green, blue and blank four-sub-pixel regions comprise a red quantum dot region, a green quantum dot region, a blue light region and a blank pixel region, wherein the red quantum dot region and the green quantum dot region are respectively formed by coating or injecting red quantum dots and green quantum dots into nano holes of a nano hole NP layer.
Isolation grooves filled with light blocking materials are formed among the four sub-pixel areas of red, green, blue and blank, and the light blocking materials include but are not limited to light absorption materials of complete black epoxy glue, white materials of complete reflection, nano materials and the like.
The shape of the blue LED chip is circular or polygonal.
The arrangement shape of the red, green, blue and blank four-sub-pixel areas is a Chinese character 'tian' shape, a long strip shape, a circular ring shape or a diamond shape.
The barrier layer is made of one or more than two materials of silicon dioxide, silicon nitride, aluminum oxide or aluminum nitride which are alternatively grown, and the thickness is 20nm-1 mu m.
The second technical scheme adopted by the invention is as follows: the preparation method of the repairable full-size full-color LED chip comprises the following steps:
step 1, etching a GaN semiconductor structure into nanopore NP layers with different depths by an electrochemical etching technology;
step 2, obtaining an isolation groove which divides the nano-pore NP layer into a red quantum dot region, a green quantum dot region, a blue light region and a blank pixel region which are regularly arranged through photoetching and etching in sequence, wherein light blocking materials are filled in the isolation groove;
step 3, depositing a barrier layer on the nano-pore NP layer obtained in the step 2, and exposing a red quantum dot region, a green quantum dot region, a blue light region and a blank pixel region through photoetching and etching in sequence;
step 4, respectively injecting or coating the red quantum dots and the green quantum dots in the red quantum dot region and the green quantum dot region obtained in the step 3 through a coating process or an injection process;
and 5, spin-coating transparent silica gel on the surface of the barrier layer obtained in the step 4 by a spin-coating technology, and then carrying out alignment bonding with the blue light LED chip to obtain the LED chip.
The beneficial effects of the invention are: the repairable full-size full-color LED chip and the preparation method thereof can realize full colorization from large-size Micro to Mini small-size chips, and simultaneously, the added blank pixel position is used as a substitute pixel of red, blue and green, so that damage caused by the process can be greatly avoided, and the yield of the chip is improved.
Drawings
FIG. 1 is a side view schematic of a repairable full-size full-color LED chip of the present invention;
FIG. 2 is a schematic top view of a repairable full-size full-color LED chip of the present invention;
FIG. 3 is a schematic diagram showing a repairable full-color LED chip according to the present invention after completion of step 1;
FIG. 4 is a schematic diagram of a repairable full-color LED chip according to the present invention after completion of step 2;
FIG. 5 is a schematic diagram of a repairable full-color LED chip according to the present invention after completion of step 3
FIG. 6 is a schematic diagram of a repairable full-color LED chip according to the present invention after completion of step 4
Fig. 7 is a schematic diagram of a repairable full-size full-color LED chip according to the present invention after completion of step 5.
In the figure, 1 is a blue light LED chip, 2 is transparent silica gel, 3 is a barrier layer, 4 is a nano-hole NP layer, 5 is a red quantum dot region, 6 is a green quantum dot region, 7 is an isolation groove, 8 is a blue light region, and 9 is a blank pixel region.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a repairable full-size full-color LED chip, as shown in fig. 1 and fig. 2, from bottom to top, the repairable full-size full-color LED chip sequentially comprises: the blue light LED chip comprises a blue light LED chip 1 with a rectangular structure, transparent silica gel 2, a barrier layer 3 and a nanopore NP layer 4, wherein the nanopore NP layer 4 is isolated into four sub-pixel regions including a red quantum dot region 5, a green quantum dot region 6, a blue light region 8 and a blank pixel region 9 through an isolation groove 7 filled with light blocking materials, and the four sub-pixel regions are arranged in a field shape.
The preparation method of the repairable full-size full-color LED chip comprises the following steps: as shown in fig. 3 to 7, the GaN semiconductor structure is electrochemically etched to form the nano-hole NP layers 4 of different depths; an isolation groove 7 is etched through photoetching, and the nano-hole NP layer 4 is isolated into four sub-pixel regions, namely a red quantum dot region 5, a green quantum dot region, a blue light region 8 and a blank pixel region 9; the barrier layer 3 is arranged on the surface of the nano-pore NP layer 4; red and green quantum dots are injected into the red quantum dot region 5 and the green quantum dot region 6 in the nanopore NP layer 4 to form a red quantum dot layer and a green quantum dot layer; and the transparent silica gel 2 is coated on the surface of the barrier layer 3 in a spin mode and is bonded with the blue LED chip 1 in an alignment mode.
Through the mode, the repairable full-size full-color LED chip and the preparation method thereof can realize the full-color LED technology with the chip size of 2-200um, the full-color LED technology can be realized from a large-size Micro chip to a Mini small-size chip, the problem of small-size yield can be solved by the added blank pixel points, the three-color unit cannot be used due to the fact that the size of the small-size chip is extremely small in the preparation process, damage to one pixel of red, blue and green can easily occur in the process, the added blank pixel points can be used for replacing blue light without quantum dot filling, red and green quantum dots can be respectively filled for replacing red and green light, the repairing function of the red, blue and green full-color points is achieved, and the yield of products can be greatly improved.
Claims (6)
1. The repairable full-size full-color LED chip is characterized by comprising a blue-light LED chip (1), transparent silica gel (2), a barrier layer (3) and a nanopore NP layer (4) which are sequentially arranged from bottom to top, wherein the nanopore NP layer (4) is provided with red, green, blue and blank four sub-pixel regions which are regularly arranged; the red, green, blue and blank four-sub-pixel region comprises a red quantum dot region (5), a green quantum dot region (6), a blue light region (8) and a blank pixel region (9), wherein the red quantum dot region (5) and the green quantum dot region (6) are respectively formed by coating red quantum dots and green quantum dots or injecting nano holes of the nano hole NP layer (4).
2. The repairable full-color LED chip according to claim 1, wherein an isolation trench (7) filled with light blocking material is opened between the four sub-pixel areas of red, green, blue and blank.
3. The repairable full-color LED chip according to claim 1, characterized in that the blue LED chip (1) is circular or polygonal in shape.
4. The repairable full-color LED chip as claimed in claim 1, wherein the red, green, blue and blank sub-pixel regions are arranged in a shape of a Chinese character 'tian', a long strip, a circular ring or a diamond.
5. The repairable full-color LED chip according to claim 1, wherein the barrier layer (3) is made of one or more of silicon dioxide, silicon nitride, aluminum oxide and aluminum nitride which are alternately grown.
6. The preparation method of the repairable full-size full-color LED chip is characterized by comprising the following steps of:
step 1, etching a GaN semiconductor structure into nanopore NP layers (4) with different depths by an electrochemical etching technology;
step 2, obtaining an isolation groove (7) which divides the nano-pore NP layer (4) into a red quantum dot region (5), a green quantum dot region (6), a blue light region (8) and a blank pixel region (9) which are regularly arranged through photoetching and etching in sequence, wherein light blocking materials are filled in the isolation groove (7);
step 3, depositing a barrier layer (3) on the nano-pore NP layer (4) obtained in the step 2, and exposing a red quantum dot region (5), a green quantum dot region (6), a blue light region (8) and a blank pixel region (9) through photoetching and etching in sequence;
step 4, respectively injecting or coating the red quantum dots and the green quantum dots in the red quantum dot region (5) and the green quantum dot region (6) obtained in the step 3;
and 5, spin-coating the transparent silica gel (2) on the surface of the barrier layer (3) obtained in the step 4, and then performing alignment bonding with the blue light LED chip (1).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210484556.7A CN114914267B (en) | 2022-04-29 | 2022-04-29 | Repairable full-size full-color LED chip and preparation method thereof |
| PCT/CN2023/091084 WO2023208096A1 (en) | 2022-04-29 | 2023-04-27 | Repairable full-size full-color led chip and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210484556.7A CN114914267B (en) | 2022-04-29 | 2022-04-29 | Repairable full-size full-color LED chip and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114914267A CN114914267A (en) | 2022-08-16 |
| CN114914267B true CN114914267B (en) | 2023-02-14 |
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| CN202210484556.7A Active CN114914267B (en) | 2022-04-29 | 2022-04-29 | Repairable full-size full-color LED chip and preparation method thereof |
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| WO (1) | WO2023208096A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114914267B (en) * | 2022-04-29 | 2023-02-14 | 西安赛富乐斯半导体科技有限公司 | Repairable full-size full-color LED chip and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511390A (en) * | 2018-05-09 | 2018-09-07 | 广东普加福光电科技有限公司 | A kind of preparation method of the full-color micro-display device of quantum dot |
| CN114300602A (en) * | 2021-12-30 | 2022-04-08 | 深圳市思坦科技有限公司 | Full-color Micro-LED, preparation method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018120022A1 (en) * | 2016-12-30 | 2018-07-05 | 东旭（昆山）显示材料有限公司 | Colour filter, display apparatus and method for manufacturing colour filter |
| CN106876562B (en) * | 2017-03-30 | 2020-03-24 | 广东普加福光电科技有限公司 | Novel micro LED structure and preparation method thereof |
| CN110112172B (en) * | 2019-05-22 | 2021-06-22 | 南京大学 | Full-color micron LED display chip based on gallium nitride nanopore array/quantum dot mixed structure and preparation method thereof |
| CN114914267B (en) * | 2022-04-29 | 2023-02-14 | 西安赛富乐斯半导体科技有限公司 | Repairable full-size full-color LED chip and preparation method thereof |
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- 2022-04-29 CN CN202210484556.7A patent/CN114914267B/en active Active
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- 2023-04-27 WO PCT/CN2023/091084 patent/WO2023208096A1/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511390A (en) * | 2018-05-09 | 2018-09-07 | 广东普加福光电科技有限公司 | A kind of preparation method of the full-color micro-display device of quantum dot |
| CN114300602A (en) * | 2021-12-30 | 2022-04-08 | 深圳市思坦科技有限公司 | Full-color Micro-LED, preparation method thereof and display device |
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| CN114914267A (en) | 2022-08-16 |
| WO2023208096A1 (en) | 2023-11-02 |
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Denomination of invention: Repairable full size full color LED chip and its preparation method Effective date of registration: 20230828 Granted publication date: 20230214 Pledgee: China Construction Bank Corporation Xi'an Chang'an Road Branch Pledgor: XI'AN SAIFULESI SEMICONDUCTOR TECHNOLOGY CO.,LTD. Registration number: Y2023980054100 |