CN216288506U - White light device and display device - Google Patents
White light device and display device Download PDFInfo
- Publication number
- CN216288506U CN216288506U CN202122370431.5U CN202122370431U CN216288506U CN 216288506 U CN216288506 U CN 216288506U CN 202122370431 U CN202122370431 U CN 202122370431U CN 216288506 U CN216288506 U CN 216288506U
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- white light
- deposition
- color deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The utility model provides a white light device and display equipment, wherein the white light device sequentially comprises the following components from bottom to top: the LED epitaxial structure comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer; the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source; the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when the light emitting area emits light; the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer. By adopting the device, the traditional mask structure for preparing the white light device is reduced, the volume and the manufacturing difficulty of the white light device are reduced, and the purpose of emitting white light by the LED device can be realized based on the principle of three primary colors.
Description
Technical Field
The utility model relates to the technical field of LED preparation, in particular to a white light device and display equipment.
Background
In the prior art, a full-color pixel array of a Micro-LED can be successfully prepared on a substrate by utilizing an electrophoretic deposition technology and adopting a quantum dot mask for multiple times. However, this method not only needs to prepare masks with corresponding specifications according to the pixel size, but also can only deposit one quantum dot material at a time, so that at least two masks are needed for preparing the full-color pixel array, and the preparation of the masks increases the manufacturing cost, and is laborious and time-consuming.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide a white light device and display equipment, which can solve the technical problems of increased manufacturing cost, labor waste and time waste caused by the fact that quantum dots are adopted for depositing a mask for many times in the prior art.
To achieve the above object, a first aspect of the present invention provides a white light device, which comprises, from bottom to top: the LED epitaxial structure comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer;
the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source;
the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when the light emitting area emits light;
the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer.
In an alternative implementation, the flip-chip LED epitaxial structure includes: the current spreading device comprises a first electrode layer, a second transparent current spreading layer, a P-type gallium nitride layer, a multi-quantum well active layer and an N-type gallium nitride layer.
In an alternative implementation, the flip-chip LED epitaxial structure includes:
the first electrode layer covers the top corner of the surface of the driving substrate, and the second electrode layer covers the other areas of the surface of the driving substrate except the area where the first electrode layer is located;
a second transparent current spreading layer overlying the second electrode layer;
a P-type gallium nitride layer overlying the second transparent current spreading layer;
a multi-quantum well active layer overlying the P-type gallium nitride layer;
the N-type gallium nitride layer covers the multiple quantum well active layer and the first electrode layer;
the light-emitting region is composed of the second electrode layer, a second transparent current expansion layer, a P-type gallium nitride layer, a multi-quantum well active layer and an N-type gallium nitride layer.
In an optional implementation manner, the flip-chip LED epitaxial structure further includes a first closed cavity located between the first electrode layer and the light emitting region, and the first closed cavity is formed by etching from the second electrode layer to a direction away from the driving substrate and etching to a portion of the N-type gallium nitride layer.
In an optional implementation manner, the array structure is H × L, when H is equal to 1, the number of the first electrode layers is two, when H is greater than 1, the number of the second electrode layers is four, H represents the number of rows of the array structure, L represents the number of columns of the array structure, and H and L both take positive integers.
In an optional implementation manner, the flip-chip LED epitaxial structure has a second closed cavity formed by etching from the second electrode layer to a direction away from the driving substrate and etching to a portion of the N-type gallium nitride layer, the second closed cavity divides a light emitting region in the flip-chip LED epitaxial structure into a plurality of light emitting units, and the color deposition regions correspond to the light emitting units one to one.
In an alternative implementation, one row of the array structure at least includes a group of color deposition areas, and the group of color deposition areas includes a first color deposition area and a second color deposition area sequentially arranged in one row, or a third color deposition area, a fourth color deposition area and a fifth color deposition area sequentially arranged in one row.
In an optional implementation manner, when the at least two types of color deposition areas deposit the quantum dots, the driving substrate is electrically connected with the anode of the electrophoretic deposition device provided with the quantum dot solution pool, and the first electrode is electrically connected with the cathode of the electrophoretic deposition device to form a closed loop.
In an alternative implementation manner, if the light-emitting region is a blue light source, the at least two types of color deposition regions include a first color deposition region and a second color deposition region, and the first color deposition region and the second color deposition region are used for forming white light when the light-emitting region emits light;
alternatively, the first and second electrodes may be,
the light-emitting region is a purple light source, the at least two types of color deposition regions comprise a third color deposition region, a fourth color deposition region and a fifth color deposition region, and the third color deposition region, the fourth color deposition region and the fifth color deposition region are used for forming white light when the light-emitting region emits light.
In an alternative implementation, the first electrode layer includes an N electrode and the second electrode layer includes a P electrode.
In an alternative implementation manner, the material of the electrode layer is electrode metal with a reflection function, such as Ti, Al, Ti, Au, Ni, or Ag.
In an alternative implementation manner, the material of the driving substrate is a Si substrate or a Cu substrate with conductivity.
To achieve the above object, a second aspect of the present invention provides a display apparatus including the white light device according to the first aspect or any one of the alternative implementations.
The embodiment of the utility model has the following beneficial effects:
the utility model provides a white light device, which sequentially comprises the following components from bottom to top: the LED epitaxial structure comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer; the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source; the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when the light emitting area emits light; the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer. By adopting the device, the quantum dot deposition mask structure of the traditional white light device is reduced, the volume and the manufacturing difficulty of the white light device are reduced, and the purpose of emitting white light by the LED device can be realized based on the principle of three primary colors.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
FIG. 1 is a schematic structural diagram of a white light device according to an embodiment of the present invention;
FIG. 2 is a schematic view of another embodiment of a white light device;
FIG. 3 is a schematic top view of a white light device according to an embodiment of the present invention;
fig. 4-17 are schematic diagrams illustrating a process for manufacturing a white light device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a white light device in an embodiment of the present invention, and the white light device shown in fig. 1 sequentially includes, from bottom to top: the LED epitaxial structure comprises a driving substrate 1, an inverted LED epitaxial structure 2, a first transparent current expansion layer 3 and a quantum dot deposition layer 4; the flip-chip LED epitaxial structure 2 includes a light emitting region; the quantum dot deposition layer 4 includes at least two types of color deposition areas (40, 41) forming a regular array structure, and is used to form white light when the light emitting region emits light. Wherein the light emitting region comprises a blue light source or a violet light source. The color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer.
It should be noted that, the driving substrate 1 is used for controlling the light emitting region included in the Flip LED epitaxial structure 2 to emit light, wherein the emitted light can form white light after passing through the first transparent current spreading layer 3 and the quantum dot deposition layer 4 including at least two types of color deposition regions (40, 41), the light emitting region can be a blue light source, a violet light source and other color light sources, the color light formed by the at least two types of color deposition regions (40, 41) and the color light emitted by the light emitting region are superposed to form white light, the Flip LED epitaxial structure refers to mounting the electrode region facing the driving substrate, so as to obtain a Flip LED Chip (Flip Chip). Furthermore, when the quantum dots are deposited, a mask layer is arranged on the first transparent current spreading layer, so that the quantum dots can be deposited in a color deposition area, and a corresponding patterning morphology is formed. Specifically, the mask layer may be a hard mask layer, and the material of the hard mask layer may be silicon dioxide or silicon nitride, and specifically, refer to the hard mask layer 7 shown in fig. 12.
It is understood that quantum dots (quantum dots) are nano-scale semiconductors that emit light of a specific frequency by applying a certain electric field or light pressure to the nano-semiconductor material, and the frequency of the emitted light varies with the size of the semiconductor, so that the color of the emitted light can be controlled by adjusting the size of the nano-semiconductor, which is called quantum dots because it has a property of confining electrons and Electron holes (Electron holes), which is similar to atoms or molecules in the natural world. For example, red and green light emitting quantum dot materials can be excited by blue light to produce red and green light emitting light sources, and the blue light emitting light source can be matched to realize color display, i.e. white light emitting of the device.
The utility model provides a white light device, which sequentially comprises the following components from bottom to top: the LED epitaxial structure comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer; the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source; the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when a light emitting area emits light; the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer. By adopting the device, the traditional mask structure for preparing the white light device is reduced, the volume and the manufacturing difficulty of the white light device are reduced, and the purpose of emitting white light by the LED device can be realized based on the principle of three primary colors.
Fig. 2 is another schematic structural diagram of a white light device according to an embodiment of the present invention, and the white light device shown in fig. 2 sequentially includes, from bottom to top: the LED epitaxial structure comprises a driving substrate 1, an inverted LED epitaxial structure 2, a first transparent current expansion layer 3 and a quantum dot deposition layer 4; the flip-chip LED epitaxial structure comprises a light emitting area; the quantum dot deposition layer includes at least two types of color deposition areas (40, 41) forming a regular array structure and used to form white light when the light emitting area emits light. Wherein the light emitting region comprises a blue light source or a violet light source. The color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer.
It should be noted that the driving substrate 1, the flip-chip LED epitaxial structure 2, the first transparent current spreading layer 3, the quantum dot deposition layer 4, and the at least two color deposition areas (40, 41) are similar to the structure shown in fig. 1, and for avoiding repetition, details are not repeated here, and the description can be specifically made with reference to fig. 1.
In a possible implementation manner, the flip-chip LED epitaxial structure 2 includes a light emitting region that is a blue light source, and the at least two types of color deposition regions (40, 41) include a first color deposition region and a second color deposition region, where the first color deposition region and the second color deposition region are used for forming white light when the light emitting region emits light; or the light-emitting region is a purple light source, the at least two types of color deposition regions (40, 41, 42) comprise a third color deposition region, a fourth color deposition region and a fifth color deposition region, and the third color deposition region, the fourth color deposition region and the fifth color deposition region are used for forming white light when the light-emitting region emits light. And a row of the at least two types of color deposition areas forming the regular array structure at least comprises a group of color deposition areas, and the group of color deposition areas comprises a first color deposition area and a second color deposition area which are sequentially arranged in the row, or a third color deposition area, a fourth color deposition area and a fifth color deposition area which are sequentially arranged in the row.
When the light emitting region included in the flip-chip LED epitaxial structure 2 is a blue light source, the color deposition region may include two types of color deposition regions (40, 41), i.e., a first color deposition region and a second color deposition region. Exemplarily, the first color deposition area and the second color deposition area are respectively used for depositing red quantum dots or green quantum dots, and then when the light-emitting area emits blue light, the two types of color deposition areas can respectively emit red light and green light, so that the purpose of emitting white light by the white light device is realized based on the red light, the green light and the blue light; the flip-chip LED epitaxial structure 2 includes a light emitting region with purple light, and the color deposition regions may include three types of color deposition regions (40, 41, 42), i.e., a third color deposition region, a fourth color deposition region, and a fifth color deposition region. For example, at this time, the third color deposition area, the fourth color deposition area and the fifth color deposition area are used for depositing red quantum dots, green quantum dots and blue quantum dots respectively, and then when the light emitting area emits a violet light source, the three types of color deposition areas can emit red light, green light and blue light respectively, so that the purpose of emitting white light by the white light device is realized based on the red light, the green light and the blue light. It will be appreciated that to ensure that the above colour combinations are arranged to form white light, it is therefore ensured that a set of colour deposition areas is included in a row of the array, with the colour deposition areas being arranged sequentially in the row. Further, a group of color deposition areas comprises at least two types of color deposition areas, for example, a group of color deposition areas comprises a red light quantum dot deposition area and a green light quantum dot deposition area; or, the group of color deposition areas comprises a red light quantum dot deposition area, a green light quantum dot deposition area and a blue light quantum dot deposition area.
With continuing reference to fig. 3, fig. 3 is a top view of a white light device in the present invention, in fig. 3, each quantum dot deposition region (40, 41, 42) forms an array structure, and is deposited on the first transparent current conducting layer 3, the array structure is an H × L array, when H is equal to 1, the number of the first electrode layers is two, when H is greater than 1, the number of the second electrode layers is four, H represents the number of rows of the array structure, L represents the number of columns of the array structure, and H and L both take positive integers. It should be noted that each column corresponds to a group of color deposition areas, and further, fig. 3 shows a top view of the white light device when H is greater than 1, so that the white light device has four first electrode layers. It will be appreciated that four electrode contact areas 201 corresponding to the first electrode layer are formed on the surface of the first transparent current-conducting layer 3 overlying the first electrode layer opposite the first electrode layer. Further, fig. 3 also shows 21 group color light emitting regions (40, 41, 42), where in the quantum dot matrix shown in fig. 3, the quantum dots of each color in each group color light emitting region are arranged according to the same color arrangement rule, but it should be noted that the quantum dots in different rows and in the same column may be quantum dots of different colors, and the color arrangement rule of the quantum dots in each group color light emitting region may also be different as long as it is ensured that the group color light emitting regions in the same row can form white light, and therefore, the color arrangement rule of the quantum dots is not limited.
Further, when the quantum dots are deposited in the deposition areas with at least two colors, the driving substrate is electrically connected with the anode of the electrophoretic deposition device provided with the quantum dot solution pool, and the first electrode is electrically connected with the cathode of the electrophoretic deposition device to form a closed loop. Fig. 14 is a schematic diagram of the connection between the electrophoretic deposition apparatus and the LED device to be deposited with quantum dots.
Note that the flip-chip LED epitaxial structure 2 includes: the first electrode layer 20 covers the top corner of the surface of the driving substrate, and the second electrode layer 21 covers the other areas of the surface of the driving substrate except the area where the first electrode layer is located; a second transparent current spreading layer 22(ITO) overlying the second electrode layer 21; a P-type gallium nitride layer 23(P-GaN) overlying the second transparent current spreading layer 22; a multiple quantum well active layer 24(MQW) overlying the P-type gallium nitride layer 23; an N-type gallium nitride layer 25(N-GaN) covering the multiple quantum well active layer 24 and the first electrode layer; the light emitting region is composed of a second electrode layer 21, a second transparent current spreading layer 22, a P-type gallium nitride layer 23, a multi-quantum well active layer 24 and an N-type gallium nitride layer 25, and a first closed cavity 26 located between the first electrode layer 20 and the light emitting region, wherein the first closed cavity 26 is formed by etching from the second electrode layer 21 to a direction away from the driving substrate 1 and etching to a part of the N-type gallium nitride layer 25. And, the flip-chip LED epitaxial structure 2 has a second closed cavity 27 formed by etching from the second electrode layer 21 to a direction away from the driving substrate 1 and etching to a portion of the N-type gallium nitride layer 25, the second closed cavity 27 divides a light emitting region in the flip-chip LED epitaxial structure 2 into a plurality of light emitting cells, and the color deposition regions correspond to the light emitting cells one-to-one, and the first closed cavity 26 is used for isolating the second electrode layer from the light emitting cells.
It should be noted that the second closed cavity 27 functions as a separation groove, and is used to separate each light-emitting region in one light-emitting unit corresponding to one group of color deposition regions, so as to improve the efficiency of emitting white light by the device, reduce the crosstalk of light generated when the light-emitting region emits light, prevent the second electrode layer from contacting with the light-emitting unit, and isolate the second electrode layer from the light-emitting unit. In a possible implementation, a light blocking material may also be deposited in the second closed cavity 27 to further reduce the crosstalk of light rays generated when the light emitting area emits light.
In an alternative implementation, the first electrode layer 20 includes an N electrode, the second electrode layer 21 includes a P electrode, the material of the electrode layer is an electrode metal with a reflective function, such as Ti, Al, Ti, Au, Ni, or Ag, and the material of the driving substrate 1 is a Si substrate with a conductive capability, a Cu substrate.
The utility model provides a white light device, which comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer, wherein the driving substrate is provided with a first transparent current expansion layer; the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source; the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when a light emitting area emits light; the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer. By adopting the device, the traditional mask structure for preparing the white light device is reduced, the volume and the manufacturing difficulty of the white light device are reduced, and the purpose of emitting white light by the LED device can be realized based on the principle of three primary colors. The white light device can realize that the non-white light LED emits white light, wherein a second closed cavity is arranged between each light emitting area to separate each light emitting area, and light crosstalk can be reduced.
In order to make the structure of the present invention more clear, the preparation of the white light device using the blue light epitaxial wafer is exemplified as follows:
firstly, preparing a blue light epitaxial wafer. The buffer layer 6, the N-GaN layer 25, the blue InGaN/GaN multiple quantum well active layer 24, and the P-GaN layer 23 are sequentially grown on the surface of the substrate 5, so as to obtain an LED epitaxial material, which has a structure shown in fig. 4, wherein the substrate 5 may be a Si substrate, a sapphire substrate, a SiC substrate, a gallium nitride substrate, or the like, which is not limited herein.
And secondly, depositing an ITO current expansion layer, namely a second transparent current expansion layer 22, on the prepared LED epitaxial material, namely the surface of the P-GaN layer 23, so as to obtain the LED epitaxial material comprising the ITO current expansion layer 22 shown in FIG. 5. Specifically, the ITO current spreading layer 22 may be deposited by using an electron beam evaporation or measurement and control sputtering technique to deposit the ITO current spreading layer 22 on the surface of the P-GaN layer 23 of the LED epitaxial material.
In the third step, patterning preparation is performed on the LED epitaxial material with the ITO current spreading layer 22. Specifically, a hard mask layer 7 is deposited on the ITO by a Plasma Enhanced Chemical Vapor Deposition (PECVD) technique or an Atomic Layer Deposition (ALD) technique, wherein the material of the hard mask layer 7 may be silicon dioxide or silicon nitride, and the deposition thickness may be 600 nm. Further, a tackifier (HMDS) and a photoresist are sequentially spin-coated on the hard mask layer 7, and after exposure and development, dry etching (ICP) or wet etching is performed, wherein the wet etching is performed by using a BOE solution and an ITO etching solution, and then etching is performed to the surface of the P-GaN layer 23 through the hard mask layer 7, so as to finally obtain the LED epitaxial material with the patterned morphology as shown in fig. 6.
And fourthly, preparing a P electrode Mesa and an N electrode Mesa of the LED epitaxial material by utilizing Mesa etching, namely depositing surfaces for depositing the first electrode layer and the second electrode layer, specifically, continuously using the patterned silicon dioxide, namely the hard mask layer 7, as a mask layer, etching the LED epitaxial material by ICP (inductively coupled plasma), wherein the etching depth is 1.2-1.4 microns, and etching until the N-GaN layer 25 is exposed, thereby preparing the LED epitaxial material shown in figure 7, wherein the Mesa of the P electrode is the P-GaN layer 22, and the Mesa of the N electrode is the N-GaN layer 25.
And fifthly, depositing P, N electrode metal as the first electrode layer and the second electrode layer. After the photolithography and development, electrode metals having a reflection function are deposited on the P, N mesa of the prepared LED epitaxial material, i.e. on the P-GaN layer 22 and the N-GaN layer 25, respectively, by means of electron beam evaporation, for example: Ti/Al/Ti/Au or Ni/Ag, etc., and further forming the first electrode layer 20 and the second electrode layer 21, thereby obtaining the LED epitaxial structure shown in fig. 8.
And sixthly, driving the substrate 1 to be bonded. Bonding P, N nano LED (light emitting diode) evaporated with electrode metal layer (20, 21), namely LED epitaxial structure, with a driving substrate 1 with conductivity, wherein the driving substrate 1 includes but is not limited to Si substrate, Cu substrate, etc., and Bonding (Bonding) the driving substrate 1 with the electrode layer (20, 21) to obtain the device shown in FIG. 9, it can be understood that the LED epitaxial structure becomes a flip-chip LED epitaxial structure after Bonding the driving substrate, and the complete and first closed cavity 26, second closed cavity 27 can also be obtained by Bonding the driving substrate.
In the seventh step, the substrate 5 and the buffer layer 6 in the device to which the driving substrate has been bonded are removed (refer to fig. 10). The substrate 5 and the buffer layer 6 are removed by laser lift-off, mechanical polishing, chemical etching or any combination thereof, and the N-GaN layer 25 is leaked out, resulting in the LED structure shown in fig. 10 except for the substrate 5 and the buffer layer 6, which includes the flip-chip LED epitaxial structure 2 and the driving substrate 1.
In the eighth step, a first transparent current spreading layer 3 is deposited. An ITO conductive layer 3 was deposited on the N-GaN25 of the flip-chip LED epitaxial structure 2 using electron beam evaporation or measurement and control sputtering techniques, resulting in the LED structure shown in fig. 11.
And ninthly, preparing a region to be deposited with the red light quantum dots. A hard mask layer 7 is deposited on the first transparent current spreading layer 3, i.e. the ITO conductive layer, by Plasma Enhanced Chemical Vapor Deposition (PECVD) or Atomic Layer Deposition (ALD), the hard mask layer 7 material may be silicon dioxide or silicon nitride, and the deposition thickness is 300 nm. Spin-coating a tackifier (HMDS) and a photoresist 8 on the hard mask layer 7 in sequence, performing exposure and development, and performing dry etching (ICP) or wet etching (BOE solution) to obtain a patterned morphology, thereby obtaining a to-be-deposited region (a color deposition region 40) and an electrode contact region 201, where the color deposition region is the patterned morphology, which can be referred to in the LED structure shown in fig. 12 and 13, where fig. 12 is a cross-sectional view of the LED structure and fig. 13 is a top view of the LED structure.
And step ten, carrying out electrophoretic deposition on the red light quantum dots. And (3) respectively connecting the anode and the cathode of an electrophoretic deposition device with the driving substrate 1 and the electrode contact region 201 of the LED device obtained in the ninth step, putting the LED device into a solution pool containing an electrophoretic solution of a red light quantum dot material, and conducting a circuit to deposit the red light quantum dots, wherein the electrophoretic deposition device is shown in fig. 14, the structure after deposition is shown in fig. 15 and 16, and fig. 15 is a cross-sectional view of the LED structure on which the red light quantum dots are deposited and fig. 16 is a top view of the LED structure on which the red light quantum dots are deposited.
And step ten, carrying out electrophoretic deposition on the green light quantum dots. The hard mask layer 7 deposited with the red light quantum dot material is coated with photoresist 1, and after exposure and development, a pattern to be deposited of the green light quantum dot material is prepared, so as to obtain a color deposition area 41 and an electrode contact area 201, as shown in fig. 17. The method is the same as the red light quantum dot electrophoretic deposition method, and the green light quantum dot material is deposited in a solution pool containing the green light quantum dot material. The deposition of the red and green quantum dots can be completed in this way twice, and finally the LED structure shown in fig. 2 and fig. 3 is obtained, so that the purpose of emitting white light on a blue light device is realized. The deposition of various quantum dot materials can be realized by adopting a step deposition method and combining a photoetching technology and a patterning technology without a special quantum dot deposition mask.
It will be appreciated that if the device is a violet light source, blue light quantum dot electrophoretic deposition is also required. And coating photoresist on the hard mask on which the red light quantum dot material and the green light quantum dot material are deposited, exposing and developing to prepare a pattern to be deposited of the green light quantum dot material, wherein the blue light quantum dot material is deposited in a solution pool containing the blue light quantum dot material in the same way as the electrophoretic deposition method of the red light quantum dot material and the green light quantum dot material. The deposition of the red, green and blue quantum dots can be completed for three times, so that the purpose of emitting white light on the purple light device is realized.
In one embodiment, there is provided a display apparatus comprising the white light device of any one of fig. 1 or 2.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (13)
1. A white light device, comprising from bottom to top in order: the LED epitaxial structure comprises a driving substrate, an inverted LED epitaxial structure, a first transparent current expansion layer and a quantum dot deposition layer;
the flip-chip LED epitaxial structure comprises a light-emitting region, wherein the light-emitting region comprises a blue light source or a purple light source;
the quantum dot deposition layer comprises at least two types of color deposition areas, the at least two types of color deposition areas form a regular array structure, and the quantum dot deposition layer is used for forming white light when the light emitting area emits light;
the color deposition area is in a patterned shape; and when the color deposition area is prepared, a mask layer is arranged on the first transparent current expansion layer.
2. The white light device of claim 1, wherein the flip-chip LED epitaxial structure comprises: the current spreading device comprises a first electrode layer, a second transparent current spreading layer, a P-type gallium nitride layer, a multi-quantum well active layer and an N-type gallium nitride layer.
3. The white light device of claim 2, wherein the flip-chip LED epitaxial structure further comprises:
the first electrode layer covers the top corner of the surface of the driving substrate, and the second electrode layer covers the other areas of the surface of the driving substrate except the area where the first electrode layer is located;
the second transparent current spreading layer is covered on the second electrode layer;
the P-type gallium nitride layer covers the second transparent current spreading layer;
the multiple quantum well active layer covers the P-type gallium nitride layer;
the N-type gallium nitride layer covers the multiple quantum well active layer and the first electrode layer;
the light-emitting region is composed of the second electrode layer, a second transparent current expansion layer, a P-type gallium nitride layer, a multi-quantum well active layer and an N-type gallium nitride layer.
4. The white light device of claim 3, wherein the flip-chip LED epitaxial structure further comprises: and the first closed cavity is formed by etching from the second electrode layer to a direction far away from the driving substrate and etching to part of the N-type gallium nitride layer.
5. The white light device of claim 3, wherein the array structure is H x L, when H is equal to 1, the number of the first electrode layers is two, when H is greater than 1, the number of the second electrode layers is four, H represents the number of rows of the array structure, L represents the number of columns of the array structure, and H and L both take positive integers.
6. The white light device of claim 3, wherein the flip-chip LED epitaxial structure has a second closed cavity formed by etching from the second electrode layer in a direction away from the driving substrate and etching to a portion of the N-type gallium nitride layer, the second closed cavity divides a light emitting region in the flip-chip LED epitaxial structure into a plurality of light emitting units, and the color deposition regions correspond to the light emitting units one to one.
7. The white light device of claim 1, wherein a row of the array structure comprises at least one set of color deposition areas, the set of color deposition areas comprising a first color deposition area and a second color deposition area arranged in sequence in a row, or a third color deposition area, a fourth color deposition area and a fifth color deposition area arranged in sequence in a row.
8. The white light device of claim 2, wherein when the at least two types of color deposition areas deposit quantum dots, the driving substrate is electrically connected with a positive electrode of the electrophoretic deposition device provided with a quantum dot solution pool, and the first electrode is electrically connected with a negative electrode of the electrophoretic deposition device to form a closed loop.
9. The white light device of claim 1, wherein the light-emitting region is a blue light source, and the at least two types of color deposition regions include a first color deposition region and a second color deposition region, and the first color deposition region and the second color deposition region are configured to form white light when the light-emitting region emits light;
alternatively, the first and second electrodes may be,
the light-emitting region is a purple light source, the at least two types of color deposition regions comprise a third color deposition region, a fourth color deposition region and a fifth color deposition region, and the third color deposition region, the fourth color deposition region and the fifth color deposition region are used for forming white light when the light-emitting region emits light.
10. The white light device of claim 2, wherein the first electrode layer comprises an N electrode and the second electrode layer comprises a P electrode.
11. The white light device of claim 2, wherein the electrode layer is made of Ti, Al, Ti, Au, Ni or Ag, which is an electrode metal having a reflective function.
12. The white light device of claim 1, wherein the driving substrate is made of a conductive Si substrate or a conductive Cu substrate.
13. A display device, characterized in that the display device comprises a white light device as claimed in any one of claims 1 to 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122370431.5U CN216288506U (en) | 2021-09-28 | 2021-09-28 | White light device and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122370431.5U CN216288506U (en) | 2021-09-28 | 2021-09-28 | White light device and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216288506U true CN216288506U (en) | 2022-04-12 |
Family
ID=81066233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122370431.5U Active CN216288506U (en) | 2021-09-28 | 2021-09-28 | White light device and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216288506U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114792750A (en) * | 2022-06-24 | 2022-07-26 | 西安赛富乐斯半导体科技有限公司 | Full-color Micro-LED flip chip structure and preparation method thereof |
-
2021
- 2021-09-28 CN CN202122370431.5U patent/CN216288506U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114792750A (en) * | 2022-06-24 | 2022-07-26 | 西安赛富乐斯半导体科技有限公司 | Full-color Micro-LED flip chip structure and preparation method thereof |
| CN114792750B (en) * | 2022-06-24 | 2022-11-01 | 西安赛富乐斯半导体科技有限公司 | Full-color Micro-LED flip chip structure and preparation method thereof |
| WO2023246308A1 (en) * | 2022-06-24 | 2023-12-28 | 西安赛富乐斯半导体科技有限公司 | Full-color micro-led flip chip structure and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7015512B2 (en) | High power flip chip LED | |
| US7064356B2 (en) | Flip chip light emitting diode with micromesas and a conductive mesh | |
| US20230109132A1 (en) | Display panel and manufacturing method thereof | |
| CN110911537B (en) | Common cathode LED chip and manufacturing method thereof | |
| US20220037393A1 (en) | Optoelectronic device comprising pixels which emit three colours | |
| CN108831979B (en) | Broadband efficient two-dimensional photonic crystal LED flip array chip and preparation method thereof | |
| CN109148652A (en) | Inorganic light-emitting diode display panel and preparation method thereof and display device | |
| CN103000778A (en) | Light emitting diode structure and manufacturing method thereof | |
| CN216288506U (en) | White light device and display device | |
| CN115020439A (en) | LED display screen manufacturing method for small spacing and LED display screen | |
| CN209929349U (en) | Display panel | |
| CN110808315A (en) | Method for increasing GaN Micro-LED color conversion efficiency | |
| CN209929308U (en) | Display panel | |
| CN115458645B (en) | Manufacturing method of crosstalk prevention structure of integrated color Micro LED | |
| CN113206176B (en) | Selective etching epitaxial Micro-LED chip and design and preparation method thereof | |
| CN116314162A (en) | Full-color Micro-LED chip with vertical structure and preparation method thereof | |
| CN215342604U (en) | LED chip structure and display module | |
| US20230096459A1 (en) | Monolithic led pixel | |
| CN115020440A (en) | Manufacturing method of small-spacing high-brightness LED display screen and LED display screen | |
| CN209929348U (en) | Display panel | |
| CN114005911B (en) | Display device and preparation method thereof | |
| CN209929299U (en) | Display panel | |
| TWI804685B (en) | Micrometer scale light emitting diode displays on patterned templates and substrates | |
| KR101166132B1 (en) | Light Emitting Diode with the secrificial materials and Its manufacturing method | |
| KR20050063254A (en) | Display using light emitting diode doped with phosphor and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |