CN104868023B - III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof - Google Patents
III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof Download PDFInfo
- Publication number
- CN104868023B CN104868023B CN201510237489.9A CN201510237489A CN104868023B CN 104868023 B CN104868023 B CN 104868023B CN 201510237489 A CN201510237489 A CN 201510237489A CN 104868023 B CN104868023 B CN 104868023B
- Authority
- CN
- China
- Prior art keywords
- layer
- white light
- quantum dot
- light led
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 50
- 238000005516 engineering process Methods 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 40
- 239000003292 glue Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 239000011258 core-shell material Substances 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 230000012010 growth Effects 0.000 claims description 8
- 208000027418 Wounds and injury Diseases 0.000 claims description 5
- 230000006378 damage Effects 0.000 claims description 5
- 208000014674 injury Diseases 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000011049 filling Methods 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 23
- 238000009616 inductively coupled plasma Methods 0.000 description 19
- 238000001194 electroluminescence spectrum Methods 0.000 description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002061 nanopillar Substances 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of III nitride semiconductor/quantum dot mixed white light LED component, region of the white light LED part outside p-type electrode and n-type electrode is provided with orderly nanohole array, the depth of nanohole array passes through mqw active layer from device surface, until inside n-type nitride layer, II VI races quantum dot is filled with the nanohole array.Also disclose its preparation method.Non-radiative recombination energy transfer in such devices use indium gallium nitrogen (InGaN) SQW and II VI quantum dots between exciton, improve device light emitting efficiency；By changing the species and proportioning of filling quantum dot, to adjust emission wavelength and intensity, the white light LED part of nitride/quantum dot mixed structure of superelevation colour rendering index can be realized.
Description
Technical field
The present invention relates to a kind of III nitride semiconductor/quantum dot mixed white light LED component and its preparation side
Method, belong to field of semiconductor illumination.
Background technology
III-nitride material is direct band-gap semicondictor, and its band gap is covered from infrared visible ray to ultraviolet band, is
Realize solid-state illumination and the ideal material of low power consumption display.Solid-state illumination is a brand-new lighting field, and it is mainly with half
Conductor chip is light emitting source, directly converts electrical energy into luminous energy, high conversion efficiency.LED is as solid-state illumination semiconductor light source
Core component, have energy consumption is low, long lifespan, small volume, it is green, safe to use, can be worked under various adverse circumstances, be
Lighting source of new generation after incandescent lamp, fluorescent lamp.With light emitting diode (LED) continuous development, solid-state illumination skill
Art will progressively substitute existing lighting engineering, welcome the new illumination epoch.
Current white light LEDs element major technique be blue-ray LED+yellow fluorescent powder (such as：) or the color of ultraviolet LED+three YAG
Fluorescent material, because its process costs is relatively low, used extensively by industrial quarters.But this fluorescent material scheme it is inevitable the shortcomings that
Including：Self-absorption, decay, yellow fluorescence pink colour conversion efficiency are low for a long time.What is more important, it is existing to be based on fluorescent material light
The LED chip of conversion, with the increase of injected current density, radiation recombination efficiency is not improved, and non-radiative recombination increase,
Such as auger recombination, defect is compound, and therefore, under big injection condition, LED luminous efficiency progressively declines, this in experiment
Phenomenon is referred to as droop effects.
Although researchers employ many methods, mqw active layer, AlGaN potential barriers such as non-polar plane growth stop
Layer, GaN isoepitaxial growths etc., with partial reduction or quantum confinement Stokes effect can be eliminated, but droop effects according to
It is old still to overcome.In order to further weaken quantum confinement Stokes effect and droop effects, light emitting diode is improved
Luminous efficiency, it is a kind of effective implementation to prepare nano-pillar (hole) type light emitting diode.This ordered nano post (hole) type
The stress of active layer structure is released in light LED material structure, so as to reduce the built in field inside active layer,
It is overlapping to be advantageous to the Spatial Wave Function of electron hole, reduces quantum confinement Stokes effect；Add electron hole simultaneously
Combined efficiency, and this nano-pillar (hole) reduces defect recombination probability, is expected to overcome droop effects.
At present, most of in the market white light LEDs use monochromatic light excitated fluorescent powder, and white light is produced using photochromic principle.Its
In it is more ripe and what is had been commercialized is to excite yellow fluorescent powder using blue light gallium nitride base chip to obtain white light.But fluorescence
The luminous efficiency of powder is relatively low, and spectrum is in shaped like narrow, and colour rendering is poor, and colour temperature is higher.Therefore, this white light source is not soft to eyes
With, it is uncoordinated.Another relatively conventional LED structure is to excite red, blue, green three primary colors fluorescent powder by ultraviolet light or purple light chip
To obtain white light, principle is ditto similar.Although colour rendering can be improved, colour temperature is adjusted, because this method equally uses
Fluorescent material, has that the effective transformation efficiency of light is low, and particularly the efficiency of red fluorescence powder needs to be greatly improved.Meanwhile fluorescence
The stability of powder is poor, largely effects on its service life.Therefore, the White light LED technology of unstressed configuration powder is increasingly taken seriously.From mesh
(referring to Chinese patent CN201210052040.1, CN201410422581.8) in preceding disclosed unstressed configuration powder White light LED technology,
It there is no the nano-pore mixed white light LED device that light conversion is realized using quantum dot.
At present, patent document CN103383980A is disclosed one kind and made using ultraviolet soft nanometer embossing (UV-NIL)
Have the method for sequence gallium nitride nanohole array.This method is using the ultraviolet soft impressing system of PMMA and uv-curable glue bilayer glue technology
Standby large area, the gallium nitride nano-pillar (hole) of low defect, and realize that dielectric layer mask is straight using reactive ion etching (RIE) technology
Footpath adjustable nano-pillar (hole) array, so as to realize the adjustable gallium nitride nano-pillar (hole) of diameter.
The content of the invention
It is an object of the invention to provide a kind of white light LED part without fluorescent material.
To reach goal of the invention, the technical solution adopted by the present invention is：One kind is based on III nitride semiconductor/quantum
The white light LED part of point mixing nanostructured, region of the white light LED part outside p-type electrode and n-type electrode is provided with orderly
Nanohole array, the depth of nanohole array passes through mqw active layer from device surface, until inside n-type nitride layer,
II-VI group quantum dot is filled with the nanohole array.
Preferably, the device includes：
One substrate；
One is grown in n-type gallium nitride (GaN) layer on substrate；
One is grown in indium gallium nitrogen/gallium nitride (In in n-type gallium nitride layerxGa1-xN/GaN) mqw active layer；
One is grown in the p-type GaN layer on mqw active layer；
One is grown in tin indium oxide (ITO) layer on p-type gallium nitride layer；
One p-type electrode, make on the ito layer；
One n-type electrode, is produced in n-type GaN layer；
One orderly nanohole array, the nanohole array are arranged at ITO layer surface, avoid p-type electrode zone, nanometer
The depth of hole array passes through mqw active layer from device surface, until inside n-type GaN layer, is filled in the nanohole array
There is II-VI group quantum dot, the color matching formula of wherein quantum dot and white light LED part is：
Swhite(λ)=SMQW(λ)+kNC1·SNC1(λ)+kNC2·SNC2(λ)+...,
Wherein S represents Energy distribution；Subscript white, MQW, NC1, NC2 represent white light LEDs, MQW, first respectively
Kind quantum dot, second of quantum dot；K represents the peak intensity value after this kind of quantum dot is normalized with quantum well radiation peak intensity.
Preferably, the substrate is Sapphire Substrate, the x scopes：0.12≤x≤0.25, mqw active layer light
Wavelength is in 430nm to 480nm, the periodicity of SQW 10~15,300~500nm of thickness of p-type GaN layer, ITO layer thickness
For 100~200nm.
Preferably, a diameter of 100~260nm of the nanohole array, cycle are 300~700nm.
Preferably, CdSe/ZnS quantum dot, CdSe of the II-VI group quantum dot from core shell structureYS1-Y/ ZnS quantum
Point, and the CdSe quantum dot of mononuclear structure, ZnZCd1-ZArbitrarily selected in Te quantum dots, nuclear radius is 1.3~2.5nm, shell
Thickness is 1.4~2.8nm, and the emission wavelength of quantum dot is 520nm to 650nm, and the species of quantum dot is filled by adjusting and is matched somebody with somebody
Than the emission wavelength for carrying out adjusting means.
Present invention also offers a kind of preparation method of above-mentioned white light LED part, its step includes：
1) one layer of ITO layer is deposited on 430~480nm of emission wavelength InGaN/GaN SQW LED substrates；
2) in the layer insulating of ITO layer superficial growth one, layer of metal film layer is grown in surface of insulating layer, by SU8 glue and purple
Outer solidification glue is spin-coated on metal film layer surface successively, and insulating barrier uses the fine and close insulating materials with high-k, metal film
The work function that the metal that layer uses contacts with p-type GaN gold-half matches；
3) UV-NIL technologies are utilized, form the ordered nano hole array of gross area in uv-curable glue using soft template；
4) RIE technologies are utilized, are passed through CHF3And O2Mixed gas etching uv-curable glue remnant layer, then with ultraviolet
Solidification glue is mask, using RIE technologies, is passed through O2SU8 layers are performed etching, nano-pore array structure is transferred to SU8 layers；
5) inductively coupled plasma etching (ICP) technology is used, Ar gas etching metallic diaphragm is passed through, by nanohole array
Structure is transferred to metallic diaphragm, removes the SU8 glue of metallic diaphragm nanohole array surface；
6) the LED component unit of standard is made in device surface using photoetching technique, removes region beyond photoresist
Metallic diaphragm, then remove photoresist；
7) photoetching, p-type electrode zone is made in device surface, using RIE technologies, is passed through CF4And O2Mixed gas etching
Insulating barrier, the nanohole array of metallic diaphragm is transferred to insulating barrier, remove photoresist；
8) ICP technologies are used, are passed through Cl2ITO layer is etched with Ar mixed gas, nano-pore array structure is situated between from insulation
Matter layer is transferred to ITO layer；
9) ICP technologies are used, are passed through Cl2With Ar mixed gas, anisotropic etching p-type gallium nitride layer, SQW have
Active layer, n-type gallium nitride layer, form the nanometer for through ITO layer, p-type gallium nitride layer, mqw active layer, being deep to n-type gallium nitride layer
Hole array, sample is placed on inorganic acid, aqueous slkali water-bath removal etching injury, then removes remnants insulating barrier；
10) photoetching technique is used, p-type electrode and n-type electrode is deposited；
11) certain density II-VI group quantum dot is matched, is spin-coated on device surface.
Preferably, the insulating barrier selects SiO2 or SiNx, and metallic diaphragm selects Ni, Cr or Al.
Preferably, the thickness of insulating layer of growth is 30~300nm, and metallic diaphragm thickness is 10~50nm, and SU8 glue thickness is
200~600nm, uv-curable glue thickness are 30~300nm.
The present invention is turned using the non-radiative recombination energy between exciton in indium gallium nitrogen (InGaN) SQW and II-VI quantum dots
Move, improve device light emitting efficiency；By changing the species and proportioning of filling quantum dot, emission wavelength and intensity, energy can be adjusted
Enough realize the white light LED part of nitride/quantum dot mixed structure of superelevation colour rendering index.Using ultraviolet soft stamping technique system
It is standby, large area low cost can be achieved and prepare, the defects of overcoming nitride quantum well LED rough surface, nanohole array
Shape, diameter are adjustable.Nanohole array made from the inventive method can be kept and the specification of original design template one substantially
Cause.In addition, the device architecture and technique extend to inorganic/organic mixed hybridization light emitting semiconductor device, and with current standard
Blue-ray LED device chip manufacture craft is completely compatible, is highly susceptible to being integrated into existing LED producing lines production.
Brief description of the drawings
Fig. 1 is the white light LED part structural representation that step 1) obtains in embodiment 1.
Fig. 2 is the white light LED part structural representation that step 2) obtains in embodiment 1.
Fig. 3 is the white light LED part structural representation that step 3) obtains in embodiment 1.
Fig. 4 is the white light LED part structural representation that step 4) obtains in embodiment 1.
Fig. 5 is the white light LED part structural representation that step 5) obtains in embodiment 1.
Fig. 6 is the white light LED part structural representation that step 6) obtains in embodiment 1.
Fig. 7 is the white light LED part structural representation that step 7) obtains in embodiment 1.
Fig. 8 is the white light LED part structural representation that step 9) obtains in embodiment 1.
Fig. 9 is the white light LED part structural representation that step 10) obtains in embodiment 1.
Figure 10 is the white light LED part structural representation that step 11) obtains in embodiment 1.
Figure 11 is the overlooking the structure diagram of white light LED part.
Figure 12 is the scanning electron microscopy picture for the ordered nano hole array for not being mixed into quantum dot in embodiment 1.
Figure 13 is the cross sectional scanning electron micro-image for the white light LED part being mixed into embodiment 1 after quantum dot.
Figure 14 is the transmission electron microscope image on white light LED part surface in embodiment 1, and wherein amplifier section is quantum
Point.
Figure 15 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 1.
Figure 16 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 2.
Figure 17 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 3.
Figure 18 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 4.
Figure 19 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 5.
Figure 20 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 6.
Figure 21 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 7.
Figure 22 is the electroluminescence spectrum of the mixed white light LED of high color rendering index (CRI) in embodiment 8.
Figure 23 is the mixed white light LED of high color rendering index (CRI) chromaticity coordinates figure.
Wherein 1 represents Sapphire Substrate, and 2 represent n-type GaN layer, and 3 represent mqw active layer, and 4 represent p-type GaN layer, 5 generations
Table I TO layers, 6 represent insulating barrier, and 7 represent metallic diaphragm, and 8 represent SU8 glue, and 9 represent uv-curable glue, and 10 represent p-type electrode, and 11
N-type electrode is represented, 12 represent nano-pore, and 13 represent quantum dot.
Embodiments of the present invention are further elaborated below in conjunction with the accompanying drawings.
Embodiment
Embodiment 1
As shown in figs. 1-11, the preparation method of this white light LED part, its step include：
1) it is 0.12 to select x, emission wavelength 430nm, and the periodicity of SQW is 10, p-type GaN thickness 300nm's
InGaN/GaN SQW LED substrates, thereon utilize electron beam evaporation technique be deposited one layer of ITO layer, thickness 100nm, then
Sample is subjected to high annealing, 450 DEG C of annealing temperature, time 2min in quick anneal oven (RTA)；
2) using plasma strengthens chemical vapor deposition method in one layer of SiO of ITO layer superficial growth2Layer, thickness 30nm,
Using physical vapor deposition in SiO2Layer surface grows layer of Ni metallic diaphragm, thickness 10nm, by the thick SU8 glue of 200nm
Thick uv-curable glue is spin-coated on Ni metal film layer surfaces successively with 30nm；
3) UV-NIL technologies are utilized, will in advance prepare and did the soft template and device ultra-violet curing glue-line of release treatment
Intimate surface contact, fully exposure makes ultra-violet curing adhesive curing under uviol lamp, then the demoulding, makes soft template and device surface point
Open, the ordered nano hole array of gross area is formed on the ultra-violet curing glue-line of device surface, nanohole array is a diameter of
260nm, cycle 600nm；
4) RIE technologies are utilized, are passed through CHF3And O2Mixed gas etching uv-curable glue remnant layer, then with ultraviolet
Solidification glue is mask, using RIE technologies, is passed through O2SU8 layers are performed etching, nano-pore array structure is transferred to SU8 layers；
5) ICP technologies are used, Ar gas etching Ni metallic diaphragms is passed through, nano-pore array structure is transferred to Ni metal films
Layer, removes glue using photoresist or is continuing with reactive ion etching technology, removes metallic diaphragm nanohole array surface table
The SU8 glue in face；
6) device is cleaned with acetone, isopropanol and deionized water, makes the LED of standard in device surface using photoetching technique
Device cell, sample is soaked in mineral acid 30 seconds, remove the Ni metallic diaphragms in the region beyond photoresist, gone using acetone
Fall photoresist, O is passed through with RIE technologies2Residual gum is removed, is cleaned, drying；
7) photoetching, p-type electrode zone is made in device surface, using RIE technologies, is passed through CF4And O2Mixed gas etching
SiO2Layer, makes the nanohole array of Ni metallic diaphragms be transferred to SiO2Layer, now p-type electrode zone has photoresist protection, is not carved
Erosion, reactive ion etching condition：The flow CF of reactive ion etching gas4:30sccm；O2:4sccm, power 30W, pressure 1.0Pa, carve
Lose time 1min；Photoresist is removed with method above；
8) ICP technologies are used, are passed through Cl2ITO layer is etched with Ar mixed gas, by nano-pore array structure from insulating barrier
It is transferred to ITO layer, etching condition：Cl2It is respectively 15 ± 10sccm and 50 ± 25sccm with Ar flows, cavity air pressure：10±
5mTorr, DC are biased：550 ± 60V, RF 150 ± 30w of power, ICP power：300 ± 200W, frequency 13.56MHz, during etching
Between：2min；
9) ICP technologies are used, are passed through Cl2With Ar mixed gas, anisotropic etching p-type gallium nitride layer, SQW have
Active layer, n-type gallium nitride layer, form the nanometer for through ITO layer, p-type gallium nitride layer, mqw active layer, being deep to n-type gallium nitride layer
Hole array, etching parameters：Cl2It is respectively 25 ± 10sccm and 10 ± 3sccm with Ar flows, cavity air pressure：10 ± 5mTorr, DC
Bias：300 ± 60V, RF 50 ± 30w of power, ICP power：200 ± 100W, frequency 13.56MHz, etch period：5min；By sample
Product are placed on inorganic acid, the C water bath of aqueous slkali 40 heats 5min and removes etching injury, are then removed using hydrofluoric acid remaining
Insulating barrier；
10) photoetching technique is used, p-type electrode and n-type electrode is deposited；
11) matched proportion density is that two amounts of 10mg/mL CdSe/ZnS core shell structures is put in toluene solution, its core/
Radius/thickness of shell is 1.3nm/1.4nm and 2.2nm/2.5nm, and the emission wavelength of quantum dot is respectively 518nm and 600nm, is revolved
It is coated in device surface.
As shown in figures 10-14, its electroluminescence spectrum is as shown in Figure 15 for obtained white light LED part.
Embodiment 2
As shown in figs. 1-11, the preparation method of this white light LED part, its step include：
1) it is 0.25 to select x, emission wavelength 480nm, and the periodicity of SQW is 15, p-type GaN thickness 500nm's
InGaN/GaN SQW LED substrates, thereon utilize electron beam evaporation technique be deposited one layer of ITO layer, thickness 200nm, then
Sample is subjected to high annealing, 600 DEG C of annealing temperature, time 10min in quick anneal oven (RTA)；
2) using plasma strengthens chemical vapor deposition method in ITO layer superficial growth layer of sinxLayer, thickness are
300nm, using physical vapor deposition in Si3N4Layer surface grows one layer of Cr metallic diaphragm, thickness 50nm, by 600nm thickness
The uv-curable glue of SU8 glue and 300nm thickness is spin-coated on Cr metal film layer surfaces successively；
3) UV-NIL technologies are utilized, will in advance prepare and did the soft template and device ultra-violet curing glue-line of release treatment
Intimate surface contact, fully exposure makes ultra-violet curing adhesive curing under uviol lamp, then the demoulding, makes soft template and device surface point
Open, the ordered nano hole array of gross area is formed on the ultra-violet curing glue-line of device surface, nanohole array is a diameter of
100nm, cycle 300nm；
4) RIE technologies are utilized, are passed through CHF3And O2Mixed gas etching uv-curable glue remnant layer, then with ultraviolet
Solidification glue is mask, using RIE technologies, is passed through O2SU8 layers are performed etching, nano-pore array structure is transferred to SU8 layers；
5) ICP technologies are used, Ar gas etching Ni metallic diaphragms is passed through, nano-pore array structure is transferred to Ni metal films
Layer, removes glue using photoresist or is continuing with reactive ion etching technology, removes metallic diaphragm nanohole array surface table
The SU8 glue in face；
6) device is cleaned with acetone, isopropanol and deionized water, makes the LED of standard in device surface using photoetching technique
Device cell, sample is soaked in mineral acid 120 seconds, remove the Cr metallic diaphragms in the region beyond photoresist, using acetone
Remove photoresist, O is passed through with RIE technologies2Residual gum is removed, is cleaned, drying；
7) photoetching, p-type electrode zone is made in device surface, using RIE technologies, is passed through CF4And O2Mixed gas etching
SiO2Layer, makes the nanohole array of Cr metallic diaphragms be transferred to SiO2Layer, now p-type electrode zone has photoresist protection, is not carved
Erosion, reactive ion etching condition：The flow CF of reactive ion etching gas4:100sccm；O2:20sccm, power 100W, pressure 10Pa,
Etch period 20min；Photoresist is removed with method above；
8) ICP technologies are used, are passed through Cl2ITO layer is etched with Ar mixed gas, by nano-pore array structure from insulating barrier
It is transferred to ITO layer, etching condition：Cl2It is respectively 15 ± 10sccm and 50 ± 25sccm with Ar flows, cavity air pressure：10±
5mTorr, DC are biased：550 ± 60V, RF 150 ± 30w of power, ICP power：300 ± 200W, frequency 13.56MHz, during etching
Between：6min；
9) ICP technologies are used, are passed through Cl2With Ar mixed gas, anisotropic etching p-type gallium nitride layer, SQW have
Active layer, n-type gallium nitride layer, form the nanometer for through ITO layer, p-type gallium nitride layer, mqw active layer, being deep to n-type gallium nitride layer
Hole array, etching parameters：Cl2It is respectively 25 ± 10sccm and 10 ± 3sccm with Ar flows, cavity air pressure：10 ± 5mTorr, DC
Bias：300 ± 60V, RF 50 ± 30w of power, ICP power：200 ± 100W, frequency 13.56MHz, etch period：10min；Will
Sample is placed on inorganic acid, the C water bath of aqueous slkali 90 heats 10min and removes etching injury, is then removed using hydrofluoric acid residual
Remaining insulating barrier；
10) photoetching technique is used, p-type electrode and n-type electrode is deposited；
11) matched proportion density is that two amounts of 10mg/mL CdSe/ZnS core shell structures is put in toluene solution, its core/
Radius/thickness of shell is 1.4nm/1.4nm and 2.5nm/2.8nm, and the emission wavelength of quantum dot is respectively 546nm and 621nm, is revolved
It is coated in device surface.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 16.
Embodiment 3
As shown in figs. 1-11, the preparation method of this white light LED part, its step include：
1) it is 0.18 to select x, emission wavelength 450nm, and the periodicity of SQW is 12, p-type GaN thickness 400nm's
InGaN/GaN SQW LED substrates, thereon utilize electron beam evaporation technique be deposited one layer of ITO layer, thickness 150nm, then
Sample is subjected to high annealing, 500 DEG C of annealing temperature, time 6min in quick anneal oven (RTA)；
2) using plasma strengthens chemical vapor deposition method in ITO layer superficial growth layer of sinxLayer, thickness are
160nm, using physical vapor deposition in Si3N4Layer surface grows one layer of Al metallic diaphragm, thickness 30nm, by 450nm thickness
The uv-curable glue of SU8 glue and 160nm thickness is spin-coated on Al metal film layer surfaces successively；
3) UV-NIL technologies are utilized, will in advance prepare and did the soft template and device ultra-violet curing glue-line of release treatment
Intimate surface contact, fully exposure makes ultra-violet curing adhesive curing under uviol lamp, then the demoulding, makes soft template and device surface point
Open, the ordered nano hole array of gross area is formed on the ultra-violet curing glue-line of device surface, nanohole array is a diameter of
180nm, cycle 700nm；
4) RIE technologies are utilized, are passed through CHF3And O2Mixed gas etching uv-curable glue remnant layer, then with ultraviolet
Solidification glue is mask, using RIE technologies, is passed through O2SU8 layers are performed etching, nano-pore array structure is transferred to SU8 layers；
5) ICP technologies are used, Ar gas etching Al metallic diaphragms is passed through, nano-pore array structure is transferred to Ni metal films
Layer, removes glue using photoresist or is continuing with reactive ion etching technology, removes metallic diaphragm nanohole array surface table
The SU8 glue in face；
6) device is cleaned with acetone, isopropanol and deionized water, makes the LED of standard in device surface using photoetching technique
Device cell, sample is soaked in mineral acid 80 seconds, remove the Ni metallic diaphragms in the region beyond photoresist, gone using acetone
Fall photoresist, O is passed through with RIE technologies2Residual gum is removed, is cleaned, drying；
7) photoetching, p-type electrode zone is made in device surface, using RIE technologies, is passed through CF4And O2Mixed gas etching
SiO2Layer, makes the nanohole array of Al metallic diaphragms be transferred to SiO2Layer, now p-type electrode zone has photoresist protection, is not carved
Erosion, reactive ion etching condition：The flow CF of reactive ion etching gas4:60sccm；O2:10sccm, power 60W, pressure 5Pa, carve
Lose time 10min；Photoresist is removed with method above；
8) ICP technologies are used, are passed through Cl2ITO layer is etched with Ar mixed gas, by nano-pore array structure from insulating barrier
It is transferred to ITO layer, etching condition：Cl2It is respectively 15 ± 10sccm and 50 ± 25sccm with Ar flows, cavity air pressure：10±
5mTorr, DC are biased：550 ± 60V, RF 150 ± 30w of power, ICP power：300 ± 200W, frequency 13.56MHz, during etching
Between：4min；
9) ICP technologies are used, are passed through Cl2With Ar mixed gas, anisotropic etching p-type gallium nitride layer, SQW have
Active layer, n-type gallium nitride layer, form the nanometer for through ITO layer, p-type gallium nitride layer, mqw active layer, being deep to n-type gallium nitride layer
Hole array, etching parameters：Cl2It is respectively 25 ± 10sccm and 10 ± 3sccm with Ar flows, cavity air pressure：10 ± 5mTorr, DC
Bias：300 ± 60V, RF 50 ± 30w of power, ICP power：200 ± 100W, frequency 13.56MHz, etch period：8min；By sample
Product are placed on inorganic acid, the C water bath of aqueous slkali 60 heats 8min and removes etching injury, are then removed using hydrofluoric acid remaining
Insulating barrier；
10) photoetching technique is used, p-type electrode and n-type electrode is deposited；
11) matched proportion density is that two amounts of 10mg/mL CdSe mononuclear structures is put in toluene solution, and its nuclear radius is
1.3nm and 2.2nm, the emission wavelength of quantum dot is respectively 520nm and 620nm, is spin-coated on device surface.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 17.
Embodiment 4
The embodiment step and embodiment 3 are basically identical, and it, which is distinguished, is quantum dot from CdSeS/ZnS core shell structures
The sub- point of two amounts, radius/thickness of its core shell is 1.3nm/1.4nm and 2.7nm/2.9nm, and the emission wavelength of quantum dot is distinguished
For 520nm and 650nm, device surface is spin-coated on.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 18.
Embodiment 5
The embodiment step and embodiment 3 are basically identical, and it, which is distinguished, is quantum dot selects ZnCdTe mononuclear structures two
Kind quantum dot, the radius of its core is 1.5nm and 2.5nm, and the emission wavelength of quantum dot is respectively 530nm and 610nm, is spin-coated on device
Part surface.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 19.
Embodiment 6
The embodiment step and embodiment 3 are basically identical, and its difference is that the x of InGaN/GaN SQW LED substrates is
0.22, emission wavelength 465nm, the periodicity of SQW is 10, and p-type GaN thickness is 200nm, and quantum dot selects ZnCdTe
The sub- point of two amounts of mononuclear structure and CdSeS/ZnS core shell structures, wherein ZnCdTe nuclear radius are 1.5nm, emission wavelength is
530nm, CdSeS/ZnS nuclear radius are 2.7nm, shell radius is 2.9nm, emission wavelength 650nm, are spin-coated on device surface.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 20.
Embodiment 7
The embodiment step and embodiment 6 are basically identical, and its difference is that quantum dot selects CdSe, ZnCdTe mononuclear structure
And three kinds of quantum dots of CdSe/ZnS core shell structures, wherein CdSe nuclear radius be 1.3nm, emission wavelength 520nm,
ZnCdTe nuclear radius is 2.5nm, emission wavelength 610nm, CdSe/ZnS nuclear radius are 1.8nm, shell radius be 2.2nm,
Emission wavelength is 586nm, is spin-coated on device surface.
The electroluminescence spectrum of obtained white light LED part is as shown in figure 21.
Embodiment 8
The embodiment step and embodiment 3 are basically identical, and its difference is that the x of InGaN/GaN SQW LED substrates is
0.16, emission wavelength 440nm, the periodicity of SQW is 10, and p-type GaN thickness is 200nm, and quantum dot selects CdSeS/
The quantum dot of two kinds of core shell structures of ZnS and CdSe/ZnS, CdSeS/ZnS nuclear radius is 1.3nm, shell radius is 1.4nm, hair
Light wave a length of 520nm, CdSe/ZnS nuclear radius are 2.2nm, shell radius is 2.5nm, emission wavelength 600nm, are spin-coated on device
Part surface.The electroluminescence spectrum of obtained white light LED part is as shown in figure 22.
Claims (7)
1. a kind of preparation method of white light LED part, its step include：
1) one layer of ITO layer is deposited on 430~480nm of emission wavelength InGaN/GaN SQW LED substrates；
2) in the layer insulating of ITO layer superficial growth one, layer of metal film layer is grown in surface of insulating layer, by SU8 glue and ultraviolet solid
Change glue and be spin-coated on metal film layer surface successively, insulating barrier uses the fine and close insulating materials with high-k, and metallic diaphragm is adopted
The work function that metal contacts with p-type GaN gold-half matches；
3) UV-NIL technologies are utilized, form the ordered nano hole array of gross area in uv-curable glue using soft template；
4) RIE technologies are utilized, are passed through CHF3And O2Mixed gas etching uv-curable glue remnant layer, then with ultra-violet curing
Glue is mask, using RIE technologies, is passed through O2SU8 layers are performed etching, nano-pore array structure is transferred to SU8 layers；
5) ICP technologies are used, Ar gas etching metallic diaphragm is passed through, nano-pore array structure is transferred to metallic diaphragm, removes gold
Belong to the SU8 glue of film layer nanohole array surface；
6) the LED component unit of standard is made in device surface using photoetching technique, removes the metal in the region beyond photoresist
Film layer, then remove photoresist；
7) photoetching, p-type electrode zone is made in device surface, using RIE technologies, is passed through CF4And O2Mixed gas etching insulation
Layer, the nanohole array of metallic diaphragm is transferred to insulating barrier, remove photoresist；
8) ICP technologies are used, are passed through Cl2ITO layer is etched with Ar mixed gas, by nano-pore array structure from insulating medium layer
It is transferred to ITO layer；
9) ICP technologies are used, are passed through Cl2With Ar mixed gas, anisotropic etching p-type gallium nitride layer, mqw active layer, n
Type gallium nitride layer, form the nano-pore battle array for through ITO layer, p-type gallium nitride layer, mqw active layer, being deep to n-type gallium nitride layer
Row, sample is placed on inorganic acid, aqueous slkali water-bath removal etching injury, then removes remnants insulating barrier；
10) photoetching technique is used, p-type electrode and n-type electrode is deposited；
11) certain density II-VI group quantum dot is matched, is spin-coated on device surface；
Region of the wherein described white light LED part outside p-type electrode and n-type electrode is provided with orderly nanohole array, nano-pore
The depth of array passes through mqw active layer from device surface, until inside n-type nitride layer, is filled in the nanohole array
There is II-VI group quantum dot.
2. the preparation method of white light LED part according to claim 1, it is characterised in that：The device includes：
One substrate；
One is grown in the n-type GaN layer on substrate；
One is grown in the In in n-type gallium nitride layerxGa1-xN/GaN mqw active layers；
One is grown in the p-type GaN layer on mqw active layer；
One is grown in the ITO layer on p-type gallium nitride layer；
One p-type electrode, make on the ito layer；
One n-type electrode, is produced in n-type GaN layer；
One orderly nanohole array, the nanohole array are arranged at ITO layer surface, avoid p-type electrode zone, nano-pore battle array
The depth of row passes through mqw active layer from device surface, until inside n-type GaN layer, II- is filled with the nanohole array
The color matching formula of VI races quantum dot, wherein quantum dot and white light LED part is：Swhite(λ)=SMQW(λ)+kNC1·SNC1(λ)+
kNC2·SNC2(λ)+...,
Wherein S represents Energy distribution；Subscript white, MQW, NC1, NC2 represent white light LEDs, MQW, the first amount respectively
Sub- point, second of quantum dot；K represents the peak intensity value after this kind of quantum dot is normalized with quantum well radiation peak intensity.
3. the preparation method of white light LED part according to claim 2, it is characterised in that：The substrate serves as a contrast for sapphire
Bottom, the x scopes：0.12≤x≤0.25, mqw active layer emission wavelength is in 430nm to 480nm, the periodicity of SQW
10~15,300~500nm of thickness of p-type GaN layer, ITO layer thickness is 100~200nm.
4. the preparation method of white light LED part according to claim 3, it is characterised in that：The nanohole array it is straight
Footpath is 100~260nm, and the cycle is 300~700nm.
5. the preparation method of the white light LED part according to any one of claim 1-4, it is characterised in that：The II-VI
CdSe/ZnS quantum dot, CdSeYS1-Y/ZnS quantum dot of race's quantum dot from core shell structure, and the CdSe quantum of mononuclear structure
Arbitrarily selected in point, ZnZCd1-ZTe quantum dots, nuclear radius is 1.3~2.5nm, and shell thickness is 1.4~2.8nm, quantum dot
Emission wavelength be 520nm to 650nm, by adjust fill quantum dot species and proportioning come the emission wavelength of adjusting means.
6. the preparation method of white light LED part according to claim 1, it is characterised in that：The insulating barrier selects SiO2Or
Si3N4, individual layer or combination multilayer of the metallic diaphragm from Ni, Cr, Al.
7. the preparation method of white light LED part according to claim 6, it is characterised in that：The thickness of insulating layer of growth is
30~300nm, metallic diaphragm thickness are 10~50nm, and SU8 glue thickness is 200~600nm, uv-curable glue thickness is 30~
300nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510237489.9A CN104868023B (en) | 2015-05-11 | 2015-05-11 | III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510237489.9A CN104868023B (en) | 2015-05-11 | 2015-05-11 | III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104868023A CN104868023A (en) | 2015-08-26 |
| CN104868023B true CN104868023B (en) | 2018-02-16 |
Family
ID=53913720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510237489.9A Active CN104868023B (en) | 2015-05-11 | 2015-05-11 | III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104868023B (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977350B (en) * | 2016-05-23 | 2019-01-08 | 吉林大学 | The preparation method of light emitting diode with quantum dots based on energy transfer mechanism |
| WO2019027820A1 (en) * | 2017-07-31 | 2019-02-07 | Yale University | Nanoporous micro-led devices and methods for making |
| CN108389941A (en) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof |
| CN108615740B (en) * | 2018-05-26 | 2020-11-10 | 矽照光电（厦门）有限公司 | Flexible active color semiconductor light-emitting display module and flexible display screen |
| CN109119436B (en) * | 2018-09-29 | 2024-04-09 | 华南理工大学 | Surface roughened nano-pore LED array chip and preparation method thereof |
| CN111200043B (en) * | 2018-11-20 | 2021-08-27 | 中国科学院半导体研究所 | Electrically pumped quantum dot single photon source and preparation method thereof |
| CN109841711A (en) * | 2019-02-01 | 2019-06-04 | 中国科学院半导体研究所 | White light LEDs and preparation method thereof based on non-radiative resonance energy transfer mechanism |
| CN110112172B (en) * | 2019-05-22 | 2021-06-22 | 南京大学 | Full-color micron LED display chip based on gallium nitride nanopore array/quantum dot mixed structure and preparation method thereof |
| CN110197790B (en) * | 2019-06-17 | 2021-07-27 | 苏州长瑞光电有限公司 | Annealing method of III-V semiconductor wafer |
| CN110491986B (en) * | 2019-07-12 | 2021-11-19 | 纳晶科技股份有限公司 | Photoelectric device, preparation method thereof and assembly of photoelectric device |
| CN110808315A (en) * | 2019-09-29 | 2020-02-18 | 北京工业大学 | Method for increasing GaN Micro-LED color conversion efficiency |
| CN110783434B (en) * | 2019-11-18 | 2021-06-11 | 深圳远芯光路科技有限公司 | LED chip and preparation method thereof |
| CN110835766B (en) * | 2019-11-19 | 2021-03-23 | 南京集芯光电技术研究院有限公司 | Surface plasmon enhanced InGaN/GaN multi-quantum well photoelectrode and preparation method thereof |
| CN113122243A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Quantum dot, preparation method thereof and quantum dot light-emitting diode |
| CN113451465B (en) * | 2020-08-12 | 2022-04-01 | 重庆康佳光电技术研究院有限公司 | Light emitting diode, manufacturing method thereof and display screen |
| CN113013299B (en) * | 2021-01-27 | 2022-04-12 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
| CN113257966B (en) * | 2021-04-13 | 2022-05-31 | 深圳市思坦科技有限公司 | LED chip structure, preparation method thereof and display module |
| CN113421952A (en) * | 2021-06-23 | 2021-09-21 | 南方科技大学 | Micro LED chip and preparation method thereof |
| CN114551693A (en) * | 2022-02-21 | 2022-05-27 | 东莞市中麒光电技术有限公司 | Efficient quantum dot filling method, light color conversion structure and light emitting chip |
| CN114792750B (en) * | 2022-06-24 | 2022-11-01 | 西安赛富乐斯半导体科技有限公司 | Full-color Micro-LED flip chip structure and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103229316A (en) * | 2010-11-26 | 2013-07-31 | 首尔Opto仪器股份有限公司 | Light emitting device and method of fabricating same |
| CN104051587A (en) * | 2014-06-19 | 2014-09-17 | 中国科学院半导体研究所 | Manufacturing method of surface-plasmon-enhanced GaN-based nanopore LED |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214742B (en) * | 2011-06-02 | 2013-02-13 | 华中科技大学 | Method for preparing two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode) |
| CN102623590A (en) * | 2012-03-31 | 2012-08-01 | 中国科学院半导体研究所 | Method for producing nanometer gallium nitride light-emitting diode (LED) |
| CN103094434B (en) * | 2012-11-27 | 2015-11-18 | 南京大学 | ICP etches the method that GaN base Multiple Quantum Well prepares nano-array figure |
| CN103383980B (en) * | 2013-06-25 | 2016-01-13 | 南京大学 | A kind of method utilizing the orderly gallium nitride nano column array of the soft impression preparation of ultraviolet |
-
2015
- 2015-05-11 CN CN201510237489.9A patent/CN104868023B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103229316A (en) * | 2010-11-26 | 2013-07-31 | 首尔Opto仪器股份有限公司 | Light emitting device and method of fabricating same |
| CN104051587A (en) * | 2014-06-19 | 2014-09-17 | 中国科学院半导体研究所 | Manufacturing method of surface-plasmon-enhanced GaN-based nanopore LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104868023A (en) | 2015-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104868023B (en) | III nitride semiconductor/quantum dot mixed white light LED component and preparation method thereof | |
| CN100442559C (en) | White led and manufacturing method therefor | |
| KR101140096B1 (en) | Nanorod Light Emitting Diode and Method for Fabricating the Same | |
| CN103383980B (en) | A kind of method utilizing the orderly gallium nitride nano column array of the soft impression preparation of ultraviolet | |
| KR102227771B1 (en) | Nano-sturucture semiconductor light emitting device | |
| CN110518101B (en) | UV LED epitaxial structure and growth method thereof | |
| US20130200334A1 (en) | Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes | |
| US9647183B2 (en) | Vertical light emitting diode with photonic nanostructures and method of fabrication thereof | |
| KR20120113191A (en) | Photonic crystal structure and light emitting diode including the same and method for manufacturing the same | |
| CN102368526A (en) | Manufacturing method for near ultraviolet LED device | |
| CN107293625B (en) | AlGaN hetero-junctions nano column array luminescent device and preparation method thereof | |
| CN105895759B (en) | A kind of DUV LED epitaxial wafer structure | |
| JP2009260350A (en) | Zinc oxide-based light emitting diode | |
| Yang et al. | InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes | |
| JP2008034482A (en) | Compound semiconductor light-emitting element, illumination apparatus using the same and method of manufacturing the compound semiconductor element | |
| CN107785462A (en) | A kind of nitride semiconductor LED and preparation method thereof | |
| JP2008034483A (en) | Compound semiconductor element, illumination apparatus using the same and method of manufacturing the same | |
| CN110783434B (en) | LED chip and preparation method thereof | |
| CN105957936B (en) | A kind of DUV LED epitaxial wafer structure | |
| Lee et al. | Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes | |
| Wu et al. | Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography | |
| CN109285927B (en) | White light emitting diode and preparation method thereof | |
| Wong et al. | High external quantum efficiency III-nitride micro-light-emitting diodes | |
| Byeon et al. | Enhancement of the photon extraction of green and blue LEDs by patterning the indium tin oxide top layer | |
| CN102104101A (en) | Surface plasma light emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |