CN114762108A - 一种集成电路 - Google Patents

一种集成电路 Download PDF

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Publication number
CN114762108A
CN114762108A CN201980102524.2A CN201980102524A CN114762108A CN 114762108 A CN114762108 A CN 114762108A CN 201980102524 A CN201980102524 A CN 201980102524A CN 114762108 A CN114762108 A CN 114762108A
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China
Prior art keywords
inductor
transistor
pgs
integrated circuit
layer
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Pending
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CN201980102524.2A
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English (en)
Inventor
黄继超
闵卿
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN114762108A publication Critical patent/CN114762108A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

一种集成电路，其中，该集成电路包括：芯片(102)和用于封装所述芯片(102)的封装层(101)。其中，芯片(102)包括衬底(1022)和设于衬底(1022)之上的电感(1021)，封装层(101)包括第一图案接地屏蔽结构(1011)，第一图案接地屏蔽结构(1011)位于封装层(101)内的金属层，第一图案接地屏蔽结构(1011)由金属层的金属刻蚀而成，且第一图案接地屏蔽结构(1011)位于电感(1021)之上，第一图案接地屏蔽结构(1011)用于减少电感(1021)在金属层中引起的感应电流。当电感(1021)处于工作状态时，由于第一图案接地屏蔽结构(1011)的存在，电感(1021)上变化的电流在第一图案接地屏蔽结构(1011)中所产生的感应电流很小，能够减小电子元件的涡流效应，提高电子元件的性能。

Description

PCT国内申请，说明书已公开。

Claims (12)

  1. PCT国内申请，权利要求书已公开。
CN201980102524.2A 2019-11-29 2019-11-29 一种集成电路 Pending CN114762108A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/122063 WO2021102940A1 (zh) 2019-11-29 2019-11-29 一种集成电路

Publications (1)

Publication Number Publication Date
CN114762108A true CN114762108A (zh) 2022-07-15

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ID=76129037

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CN201980102524.2A Pending CN114762108A (zh) 2019-11-29 2019-11-29 一种集成电路

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CN (1) CN114762108A (zh)
WO (1) WO2021102940A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792635B2 (ja) * 2001-12-14 2006-07-05 富士通株式会社 電子装置
CN101483434A (zh) * 2008-01-11 2009-07-15 上海锐协微电子科技有限公司 一种低调谐增益变化的压控振荡器
JP2009194302A (ja) * 2008-02-18 2009-08-27 Mitsubishi Electric Corp 半導体集積回路
JP5551480B2 (ja) * 2010-03-24 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
CN102738124B (zh) * 2012-06-29 2015-05-13 杭州电子科技大学 一种分形图案接地屏蔽结构
US10068856B2 (en) * 2016-07-12 2018-09-04 Mediatek Inc. Integrated circuit apparatus
TWI624113B (zh) * 2016-11-03 2018-05-11 矽品精密工業股份有限公司 電子模組

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