CN114734543A - Cutting method of large-size ultrathin silicon wafer - Google Patents
Cutting method of large-size ultrathin silicon wafer Download PDFInfo
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- CN114734543A CN114734543A CN202210465088.9A CN202210465088A CN114734543A CN 114734543 A CN114734543 A CN 114734543A CN 202210465088 A CN202210465088 A CN 202210465088A CN 114734543 A CN114734543 A CN 114734543A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 claims abstract description 35
- 229910000831 Steel Inorganic materials 0.000 claims description 19
- 239000010959 steel Substances 0.000 claims description 19
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for cutting a large-size ultrathin silicon wafer, which comprises the following steps of: a pair of guide wheels are divided into three sections for slotting, namely the lengths of the guide wheels are divided into three parts, and the guide wheels are sequentially divided into L parts from the incoming line to the outgoing line1、L2、L3Three regions; l is a radical of an alcohol1The zone slot distance is determined according to the thickness of the target piece and the wire diameter of the cutting rigid wire; l is2Zone slot pitch equal to L1Zone groove spacing minus 1um, L3Zone slot pitch equal to L2The distance between the area grooves is reduced by 1 um; the theoretical number of sheets n is the ratio of the length x of the bar to the distance y of the guide wheel slot, i.e. L1The groove pitch of the region is y, L2The groove pitch of the region is y-1, L3The groove distance of the area is y-2, and the adjusted actual number of the sheets n1(= x/y + x/(y-1) + x/(y-2)) at the groove pitchThe method is used for conventional cutting. The invention has the advantages that the uniformity of the thickness of the silicon wafer can be maintained, more silicon wafers can be cut, and the cost of the silicon wafers is reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaic slicing processes, in particular to a method for cutting a large-size ultrathin silicon wafer.
Background
The silicon chip is used as one of main raw materials of downstream batteries and component products in the photovoltaic industry, and is subjected to technical replacement from mortar cutting to diamond wire cutting, so that the silicon chip product is driven to continuously reduce cost and improve efficiency. In the silicon wafer link, the continuous promotion of the development of the silicon wafer towards the direction of large size and flaking becomes an important measure for continuously reducing cost and improving efficiency in the future. The large size of the silicon wafer is beneficial to increasing the output of the silicon wafer under the condition of not increasing equipment and manpower, so that the cost of the silicon wafer is reduced; the thinning of the silicon wafer is beneficial to increasing the output of the silicon wafer and reducing the consumption of silicon materials in the same cutting time, so that the cost of the silicon wafer is reduced.
However, in slicing production, the number of the silicon slices depends on grooving parameters, and the uniform grooving distance is adopted in the prior art, so that the position with more serious wear is worn along with the wear of a steel wire in the cutting process, the silicon slice is thicker, and certain thickness waste exists.
Disclosure of Invention
The invention aims to solve the problems of uneven slicing thickness and material waste of the existing silicon wafer, and provides a method for cutting a large-size ultrathin silicon wafer, which can keep the uniformity of the thickness of the wafer, cut more silicon wafers and reduce the cost of the silicon wafer.
In order to achieve the purpose, the invention adopts the following technical scheme:
a cutting method of large-size ultrathin silicon wafers comprises the following steps of:
(1) and (3) grooving in sections: a pair of guide wheels are divided into three sections for slotting, namely the lengths of the guide wheels are divided into three parts, and the guide wheels are sequentially divided into L parts from the incoming line to the outgoing line1、L2、L3Three regions;
(2) determination of L1Zone groove pitch: the target thickness is the difference between the groove distance of the guide wheel and the effective wire diameter of the cutting steel wire, the steel wire is continuously worn during the cutting process, and the wire diameter follows the target thicknessDecrease, so L3Has a groove pitch of less than L2Groove distance, L2Is again less than L1A groove pitch of L1The zone slot distance is determined according to the thickness of the target piece and the wire diameter of the cutting rigid wire;
(3) determination of L2Zone groove pitch: l is2Zone slot pitch equal to L1The groove distance of the region is reduced by 1um so as to offset the worn wire diameter of the cutting steel wire;
(4) determination of L3Zone groove pitch: l is3Zone slot pitch equal to L2The distance between the area grooves is reduced by 1 um;
(5) calculating the actual number of the cutting pieces: the theoretical number of sheets n is the ratio of the length x of the bar to the distance y of the guide wheel slot, i.e. L1The groove pitch of the region is y, L2The groove pitch of the region is y-1, L3The groove distance of the area is y-2, and the adjusted actual number of the sheets n1And (3) carrying out conventional cutting according to the groove pitch setting method by using the method of = x/y + x/(y-1) + x/(y-2).
Further, in the step (2), L1The area slot pitch is the sum of the thickness of the target slice and the outer diameter of the cutting steel wire.
Furthermore, in the steps (1) - (5), a diamond wire of 40um is selected as the cutting steel wire, and the thickness of the cutting sheet is set to be 165 um.
Furthermore, in the steps (2) to (3), the distance between the guide wheels is set to be 226um and L1The distance between the area slots is 226um, L2The zone slot pitch is 225um, L3The zone slot pitch is 224 um.
Further, in the step (5), the wire cutting tension is set to 4N, the wire speed is 2100m/min, and the main body cutting speed is 2.8 mm/min.
According to the technical scheme, the consistency of the thickness of the silicon wafer is better through groove distance adjustment, the part with the excessive thickness is extracted, more silicon wafers are cut, the output of the silicon wafers is increased, the consumption of silicon materials is reduced, and the purpose of reducing the cost of the silicon wafers is achieved within the same cutting time under the condition that the manpower of equipment and machines is not increased.
Drawings
FIG. 1 is a schematic diagram of a method for cutting a large-size ultra-thin silicon wafer according to the present invention.
Detailed Description
Example 1
In order to make the present invention more clear, the following is a further description of the method for cutting large-sized ultra-thin silicon wafer according to the present invention with reference to the attached drawings, and the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention.
Referring to fig. 1, the cutting method of the large-size ultrathin silicon wafer, the used device comprises a guide wheel and a cutting steel wire which are matched with each other, and the method comprises the following specific steps:
(1) and (3) grooving in a segmented manner: a pair of guide wheels are divided into three sections for slotting, namely the lengths of the guide wheels are divided into three sections which are sequentially divided into L sections from the incoming line to the outgoing line1、L2、L3Three regions;
(2) determination of L1Zone groove pitch: the target thickness is the difference between the groove pitch of the guide wheel and the effective wire diameter of the cutting steel wire, the steel wire is continuously worn during the cutting process, the wire diameter is reduced, so L3Is less than L2Distance of grooves, L2Is again less than L1Groove distance of (L)1The area slot distance is the sum of the thickness of the target sheet and the outer diameter of the cutting steel wire;
(3) determination of L2Zone groove pitch: l is2Zone slot pitch equal to L1The groove distance of the region is reduced by 1um so as to offset the worn wire diameter of the cutting steel wire;
(4) determination of L3Zone groove pitch: l is a radical of an alcohol3Zone slot pitch equal to L2The distance between the area grooves is reduced by 1 um;
(5) calculating the actual number of the cutting pieces: the theoretical number of sheets n is the ratio of the length x of the bar to the distance y of the guide wheel slot, i.e. L1The groove pitch of the region is y, the groove pitch of the region L2 is y-1, the groove pitch of the region L3 is y-2, the actual number of sheets n1 after adjustment is = x/y + x/(y-1) + x/(y-2), and the cutting is performed conventionally according to the groove pitch setting method.
In this embodiment, the thickness of 165um pieces is cut by a 40-diamond wire, the conventional slot pitch is set to 226um, and the number of the pieces is 830/0.226=3672 according to the fixed bar length of 830 mm. After the three-section type slotting method provided by the invention is used, L1Zone groove pitch 226mm，L2Zone slot pitch 225um, L3The distance between the grooves of the regions is 224um, and the theoretical number of the blades is 276.6/0.224+276.6/0.225+276.6/0.226=3688, so that 16 blades can be added to each cutter bar.
According to the invention, as the target slice thickness = guide wheel groove distance-steel wire effective wire diameter, the steel wire is continuously abraded in the cutting process, the wire diameter is reduced, and the silicon slice thickness is gradually increased and exceeds the target slice thickness under the condition that the guide wheel groove distance is uniform and unchanged. The invention keeps the consistency of the thickness of the silicon wafer by adjusting the slotting distance, extracts the part with excessive thickness, cuts out more silicon wafers, reduces the cost of the silicon wafers, divides a pair of guide wheels into three sections for slotting, namely, the length is divided into three parts, and the three parts are sequentially divided into L parts from the wire inlet direction to the wire outlet direction1、L2、L3Three regions, L1The zone groove pitch is determined according to the target thickness and the wire diameter of the diamond wire, L2Zone slot pitch of L1The groove distance is reduced by 1um, L3Zone slot pitch of L2The groove pitch is reduced by 1 um. Theoretical number of sheets = rod length/guide wheel slot pitch, and after the technical scheme is adopted, compared with L1Region, L2、L3The distance between the grooves is reduced, and the number of the theoretical chips to be cut is more than L1And the purpose of multiple sheets of a pair of guide wheels is achieved.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.
Claims (5)
1. A cutting method of large-size ultrathin silicon wafers comprises the following steps of:
(1) and (3) grooving in sections: a pair of guide wheels are divided into three sections for slotting, namely the lengths of the guide wheels are divided into three sections which are sequentially divided into L sections from the incoming line to the outgoing line1、L2、L3Three regions;
(2) determination of L1Zone groove pitch: the target thickness is the difference between the groove pitch of the guide wheel and the effective wire diameter of the cutting steel wire, the steel wire is continuously worn during the cutting process, the wire diameter is reduced, so L3Has a groove pitch of less than L2Distance of grooves, L2Is again less than L1A groove pitch of L1The area slot distance is determined according to the thickness of the target piece and the wire diameter of the cutting rigid wire;
(3) determination of L2Zone groove pitch: l is2Zone slot pitch equal to L1The groove distance of the region is reduced by 1um so as to offset the worn wire diameter of the cutting steel wire;
(4) determination of L3Zone groove pitch: l is3Zone slot pitch equal to L2The distance between the area grooves is reduced by 1 um;
(5) calculating the actual number of the cutting pieces: the theoretical number of sheets n is the ratio of the length x of the bar to the distance y of the guide wheel slot, i.e. L1The groove pitch of the region is y, L2The groove pitch of the region is y-1, L3The groove distance of the area is y-2, and the adjusted actual number of the sheets is n1And (3) carrying out conventional cutting according to the groove pitch setting method by using the method of = x/y + x/(y-1) + x/(y-2).
2. The method for slicing a large-sized ultra-thin silicon wafer as claimed in claim 1, wherein:
in the step (2), L1The area slot pitch is the sum of the thickness of the target slice and the outer diameter of the cutting steel wire.
3. The method for cutting a large-sized ultra-thin silicon wafer as claimed in claim 1 or 2, wherein:
in the steps (1) to (5), a diamond wire of 40um is selected as the cutting steel wire, and the thickness of the cutting piece is set to be 165 um.
4. The method for cutting a large-sized ultra-thin silicon wafer as claimed in claim 1 or 2, wherein:
in the steps (2) to (3), the groove distance of the guide wheel is set to be 226um and L1The distance between the area slots is 226um, L2The zone groove distance is 225um, L3The zone slot pitch is 224 um.
5. The method for cutting a large-sized ultra-thin silicon wafer as claimed in claim 1 or 2, wherein:
in the step (5), the tension of the cutting steel wire is set to be 4N, the linear speed is 2100m/min, and the main cutting speed is 2.8 mm/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210465088.9A CN114734543A (en) | 2022-04-29 | 2022-04-29 | Cutting method of large-size ultrathin silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210465088.9A CN114734543A (en) | 2022-04-29 | 2022-04-29 | Cutting method of large-size ultrathin silicon wafer |
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| CN114734543A true CN114734543A (en) | 2022-07-12 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101391464A (en) * | 2008-10-28 | 2009-03-25 | 林永健 | Home roll for line cutting machine |
| CN101618519A (en) * | 2008-07-01 | 2010-01-06 | 内蒙古晟纳吉光伏材料有限公司 | Method and device thereof for linearly cutting silicon slice |
| WO2015043384A1 (en) * | 2013-09-30 | 2015-04-02 | 凡登（江苏）新型材料有限公司 | Multi-line cutting guide wheel with customized groove type, and manufacturing method therefor |
| CN106938504A (en) * | 2017-03-31 | 2017-07-11 | 江苏美科硅能源有限公司 | A kind of efficient, low cost diamond wire work sheet polysilicon chip method |
| CN112776195A (en) * | 2019-11-01 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer processing method, grooving main roller and slicing equipment |
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2022
- 2022-04-29 CN CN202210465088.9A patent/CN114734543A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101618519A (en) * | 2008-07-01 | 2010-01-06 | 内蒙古晟纳吉光伏材料有限公司 | Method and device thereof for linearly cutting silicon slice |
| CN101391464A (en) * | 2008-10-28 | 2009-03-25 | 林永健 | Home roll for line cutting machine |
| WO2015043384A1 (en) * | 2013-09-30 | 2015-04-02 | 凡登（江苏）新型材料有限公司 | Multi-line cutting guide wheel with customized groove type, and manufacturing method therefor |
| CN106938504A (en) * | 2017-03-31 | 2017-07-11 | 江苏美科硅能源有限公司 | A kind of efficient, low cost diamond wire work sheet polysilicon chip method |
| CN112776195A (en) * | 2019-11-01 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer processing method, grooving main roller and slicing equipment |
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Application publication date: 20220712 |