CN115489040A - Slotting method of main roller for processing solar-grade large-size flaky silicon wafer - Google Patents

Slotting method of main roller for processing solar-grade large-size flaky silicon wafer Download PDF

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Publication number
CN115489040A
CN115489040A CN202211149318.7A CN202211149318A CN115489040A CN 115489040 A CN115489040 A CN 115489040A CN 202211149318 A CN202211149318 A CN 202211149318A CN 115489040 A CN115489040 A CN 115489040A
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main
silicon wafer
main roller
area
distance
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CN202211149318.7A
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伍金军
彭云祥
陈欣琪
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Yichun Yuze New Energy Co ltd
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Yichun Yuze New Energy Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The application provides a slotting method of a main roller for processing a solar-grade large-size flaky silicon wafer, which comprises the following steps: determining the target thickness of the silicon wafer according to the requirement; (2) measuring and determining the effective wire diameter of the steel wire; (3) Dividing the main roller into three sections of grooves, and uniformly dividing the lengths of the grooves from the steel wire inlet to the outlet direction into LI, L2 and L3 areas; (31) Determining the main roll groove distance of the L1 area as the target sheet thickness and the effective wire diameter of the steel wire; (32) Determining that the main roll groove distance of the L2 area is the main roll groove distance minus M distance of the L1 area; (33) The main roll groove distance of the L3 area is determined to be the N distance reduced by the main roll groove distance of the L2 area, the structure is reasonable, the silicon wafer thickness is uniform, more silicon wafers are produced, and the cost is saved.

Description

Slotting method of main roller for processing solar-grade large-size flaked silicon wafer
Technical Field
The application relates to a slotting method for a main roller, in particular to a slotting method for a solar-grade large-size flaked main roller for processing a silicon wafer.
Background
The silicon chip is used as one of main raw materials of downstream batteries and component products in the photovoltaic industry, and the technology change from mortar cutting to diamond wire cutting is carried out, so that the continuous cost reduction and efficiency improvement of the silicon chip product are driven. In the link of silicon wafers, the development of silicon wafers towards the directions of large size and flaking can become an important measure for continuously reducing cost and improving efficiency in the future. The large size of the silicon wafer is beneficial to increasing the output of the silicon wafer under the condition of not increasing equipment and manpower, so that the cost of the silicon wafer is reduced; the thinning of the silicon wafer is beneficial to increasing the output of the silicon wafer and reducing the consumption of silicon materials in the same cutting time, so that the cost of the silicon wafer is reduced.
In the prior art, the silicon wafer discharging quantity depends on slotting parameters, uniform slotting distances are adopted, and the thicker the silicon wafer is along with the abrasion of steel wires in the cutting process, the more serious the abrasion is, the more uneven the thickness of the silicon wafer is, certain thickness waste exists, and the production cost is increased, so that a slotting method of a main roller for processing a solar-grade large-size flaky silicon wafer is urgently needed to solve the problems.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a slotting method for a main roller for processing a solar-grade large-size flaky silicon wafer, so as to solve the problems in the background technology.
In order to achieve the above object, the present application provides a method for grooving a main roller for processing a solar-grade large-size flaked silicon wafer, comprising the steps of:
(1) Determining the target thickness of the silicon wafer according to the requirement;
(2) Measuring and determining the effective wire diameter of the steel wire;
(3) Dividing the main roller into three sections of grooves, and uniformly dividing the lengths of the grooves from the steel wire inlet to the outlet direction into LI, L2 and L3 areas;
(31) Determining the main roll groove distance of the L1 area as the target sheet thickness and the effective wire diameter of the steel wire;
(32) Determining that the main roll groove distance of the L2 area is the main roll groove distance minus M distance of the L1 area;
(33) And determining that the main roll groove distance of the L3 area is equal to the main roll groove distance of the L2 area minus the N distance.
Furthermore, the number of the main rollers is two, and a reserved main roller groove distance is diagonally arranged at one end of each of the two main rollers.
Further, the main roller groove distances of the steel wire between the two main rollers on the same vertical surface are the same.
Further, the effective wire diameter of the steel wire in the step (31) is an average value of the effective wire diameters of the steel wires in the regions L1, L2, and L3.
Further, M in the step (32) and N in the step (33) have the same value.
Further, the value of M in the step (32) is 0.5-1.5um, and the value of N in the step (33) is 0.5-1.5um.
Further, the value of M in step (32) is 1um, and the value of N in step (33) is 1um.
Furthermore, the main roll groove distance of the L1 area, the main roll groove distance of the L2 area and the main roll groove distance of the L3 area are all U-shaped structures, and the bottom surfaces of the main roll groove distances of the U-shaped structures are matched with the bottom surfaces of steel wires at the corresponding positions.
According to the grooving method of the main roller for processing the solar-grade large-size flaked silicon wafer, compared with the L1 area, the groove distance of the main roller in the L2 and L3 areas is reduced, the number of the theoretical slices of the linear cutting is more than that in the L1 area, the purpose of excessive slices is achieved, the phenomenon that the silicon wafer is thicker and the thickness is wasted due to abrasion of a steel wire is avoided, the production cost is saved, and the groove distance of the main roller at the local position of the main roller is reduced through the use of the grooving method, so that the thickness uniformity of the silicon wafer is kept.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments with reference to the attached drawings in which:
FIG. 1 is a flow chart of a method for grooving a solar grade large-size flaked main roll for silicon wafer processing according to an embodiment of the present application;
fig. 2 is a structural view illustrating a grooving method of a main roll for processing a solar-grade large-sized flaked silicon wafer according to an embodiment of the present application;
in the figure: 1-main roller, 2-main roller groove distance and 3-steel wire.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the application easier to understand, the application is further described in the following combined with the specific embodiments.
As shown in fig. 1, the present application provides a technical solution: a slotting method of a main roller for processing a solar-grade large-size flaky silicon wafer comprises the following steps:
(1) Determining the target thickness of the silicon wafer according to the requirement;
(2) Measuring and determining the effective wire diameter of the steel wire 3;
(3) The main roller 1 is slotted into three sections, and the length from the steel wire 3 to the slotting part in the outgoing direction is evenly divided into three areas, namely LI, L2 and L3;
(31) Determining the main roll groove distance 2 of the L1 area as the target sheet thickness and the effective wire diameter of the steel wire 3;
(32) Determining that the main roll groove distance 2 of the L2 area is the distance of subtracting M from the main roll groove distance 2 of the L1 area;
(33) The main roll groove distance 2 of the L3 area is determined to be the distance N reduced from the main roll groove distance 2 of the L2 area, compared with the L1 area, the main roll groove distances 2 of the L2 area and the L3 area are reduced, the number of the wire-cutting theoretical sheets is more than that of the L1 area, the purpose of excessive sheet discharging is achieved, the phenomenon that the silicon wafers are thicker and have thickness waste due to abrasion of a steel wire 3 is avoided, production cost is saved, and the main roll groove distance 2 of the local position of the main roll 1 is reduced through use, so that the uniformity of the thickness of the silicon wafers is kept.
Referring to fig. 2, the number of the main rollers 1 is two, the reserved main roller groove distances 2 are diagonally arranged at one ends of the two main rollers 1, the reserved main roller groove distances 2 are designed to prevent all grooves from being formed and causing damage to grooving cutters, the main roller groove distances 2 on the same vertical plane where the steel wires 3 between the two main rollers 1 are located are the same, and the design facilitates the thickness of silicon slices cut by the steel wires 3 to be more uniform and improves the uniformity of the thickness of the silicon slices.
Referring to fig. 1, the effective wire diameter of the steel wire 3 in step (31) is the average value of the effective wire diameters of the steel wires 3 in the L1, L2 and L3 regions, M in step (32) is the same as N in step (33), the design improves the accuracy of obtaining the value of the main roll groove pitch 2 in the L1 region, M in step (32) is 0.5-1.5um, N in step (33) is 0.5-1.5um, M in step (32) is 1um, and N in step (33) is 1um.
Referring to fig. 1, the main roll groove distance 2 in the L1 region, the main roll groove distance 2 in the L2 region and the main roll groove distance 2 in the L3 region are all U-shaped structures, and the bottom surfaces of the main roll groove distances 2 in the U-shaped structures are matched with the bottom surfaces of the steel wires 3 at the positions corresponding to the main roll groove distances 2, so that the design improves the stability of the connection positions of the steel wires 3 and the main roll groove distances 2, and prevents the steel wires 3 from being damaged due to the dislocation of the steel wires 3 and the main roll groove distances 2.
Referring to fig. 1-2, as an embodiment of the present application: the method comprises the steps that a worker determines the target thickness of a silicon wafer according to requirements, then measures and determines the effective wire diameter of a steel wire 3, a main roller 1 is divided into three sections for slotting, the length from a wire inlet of the steel wire 3 to the slotting part in the wire outlet direction is sequentially and uniformly divided into three areas LI, L2 and L3, the main roller groove distance 2 of the L1 area is sequentially determined to be the target thickness plus the effective wire diameter of the steel wire 3, the main roller groove distance 2 of the L2 area is determined to be the distance between the main roller groove distance 2 of the L1 area and the distance between the main roller groove distance 2 of the L1 area, the main roller groove distance 2 of the L3 area is determined to be the distance between the main roller groove distance 2 of the L2 area and the main roller groove distance 2 of the L1 area, the theoretical number of slices of the silicon wafer is greater than that of the L1 area, the purpose of the silicon wafer more slices is achieved, the phenomenon that the thickness of the silicon wafer is wasted due to abrasion of the steel wire 3 is avoided, and the production cost is saved, and the uniformity of the silicon wafer thickness is kept by using the main roller groove distance 2 of the main roller 1 which reduces the local position.
Taking the wire diameter of a product with the specification of 40um and the thickness of 165um pieces in the size of 182 um wire-electrode cutting as an example, the conventional parameter groove distance is set to 226um, the groove distance 2 of a process main roller is calculated according to the fixed silicon rod length of 830mm, the theoretical number of the obtained pieces is 3672 pieces (830/0.226), and the theoretical number of the obtained pieces = the silicon rod length/the groove distance 2 of the main roller.
By adopting the three-section type slotting method provided by the invention, the main roller groove distance in the L1 area is 226um, the main roller groove distance in the L2 area is 225um, the main roller groove distance in the L3 area is 224um, the theoretical number of generated sheets is 3688 sheets (276.6/0.224 +276.6/0.225+ 276.6/0.226), 16 sheets can be increased by one linear cutting, and the yield can be increased by 104 ten thousand yuan per month according to the calculation of 10000 blades per month (10000 x 16=16 ten thousand, and 16 ten thousand =104 ten thousand yuan per unit price of 6.5 yuan.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (8)

1. A slotting method of a main roller for processing a solar-grade large-size flaked silicon wafer is characterized by comprising the following steps:
(1) Determining the target thickness of the silicon wafer according to the requirement;
(2) Measuring and determining the effective wire diameter of the steel wire (3);
(3) Dividing the main roller (1) into three sections of grooves, and uniformly dividing the lengths of the grooves from the wire inlet of the steel wire (3) to the wire outlet direction into LI, L2 and L3 areas;
(31) Determining the main roll groove distance (2) of the L1 area as the target sheet thickness and the effective wire diameter of the steel wire (3);
(32) Determining that the main roll groove distance (2) of the L2 area is the main roll groove distance (2) minus M distance of the L1 area;
(33) And determining the main roll groove distance (2) of the L3 area as the main roll groove distance (2) of the L2 area minus the N distance.
2. The grooving method for the solar-grade large-size flaked silicon wafer processing main roller according to claim 1, wherein the number of the main rollers (1) is two, and a reserved main roller groove distance (2) is arranged on one end of the two main rollers (1) in a diagonal manner.
3. The grooving method for the main roller for processing the solar-grade large-size flaked silicon wafer according to claim 2, wherein the main roller groove pitch (2) on the same vertical plane where the steel wire (3) is located between the two main rollers (1) is the same.
4. The grooving method for a solar-grade large-size flaked silicon wafer processing main roller according to claim 1, wherein the effective wire diameter of the steel wire (3) in the step (31) is an average value of the effective wire diameters of the steel wire (3) in the regions of L1, L2, and L3.
5. The method for grooving the main roll for processing a solar-grade large-size flaked silicon wafer according to claim 1, wherein M in step (32) and N in step (33) have the same value.
6. The method for grooving the main roll for processing a solar-grade large-size flaked silicon wafer according to claim 5, wherein the value of M in step (32) is 0.5 to 1.5um, and the value of N in step (33) is 0.5 to 1.5um.
7. The method of claim 6, wherein M in step (32) has a value of 1um, and N in step (33) has a value of 1um.
8. The grooving method for the main roller for processing the solar-grade large-size flaked silicon wafer according to claim 1, wherein the main roller groove pitch (2) in the L1 region, the main roller groove pitch (2) in the L2 region and the main roller groove pitch (2) in the L3 region are all U-shaped structures, and the bottom surfaces of the main roller groove pitches (2) in the U-shaped structures are matched with the bottom surfaces of the steel wires (3) corresponding to the main roller groove pitches.
CN202211149318.7A 2022-09-21 2022-09-21 Slotting method of main roller for processing solar-grade large-size flaky silicon wafer Pending CN115489040A (en)

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CN202211149318.7A CN115489040A (en) 2022-09-21 2022-09-21 Slotting method of main roller for processing solar-grade large-size flaky silicon wafer

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Application Number Priority Date Filing Date Title
CN202211149318.7A CN115489040A (en) 2022-09-21 2022-09-21 Slotting method of main roller for processing solar-grade large-size flaky silicon wafer

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CN115489040A true CN115489040A (en) 2022-12-20

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