CN114695593A - 背接触电池的制备方法及背接触电池 - Google Patents
背接触电池的制备方法及背接触电池 Download PDFInfo
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- CN114695593A CN114695593A CN202011611034.6A CN202011611034A CN114695593A CN 114695593 A CN114695593 A CN 114695593A CN 202011611034 A CN202011611034 A CN 202011611034A CN 114695593 A CN114695593 A CN 114695593A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 83
- 239000010703 silicon Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 230000005641 tunneling Effects 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 239000005360 phosphosilicate glass Substances 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims 1
- 238000009501 film coating Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Substances BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
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CN202011611034.6A CN114695593B (zh) | 2020-12-30 | 2020-12-30 | 背接触电池的制备方法及背接触电池 |
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CN114695593A true CN114695593A (zh) | 2022-07-01 |
CN114695593B CN114695593B (zh) | 2024-05-14 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024012162A1 (zh) * | 2022-07-15 | 2024-01-18 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 一种p型ibc电池的制作方法 |
Citations (14)
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FR2906405A1 (fr) * | 2006-09-22 | 2008-03-28 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
WO2013087458A1 (de) * | 2011-12-16 | 2013-06-20 | International Solar Energy Research Center Konstanz E.V. | Rückkontakt-solarzelle und verfahren zur herstellung einer rückkontakt-solarzelle |
CN104282782A (zh) * | 2013-07-05 | 2015-01-14 | Lg电子株式会社 | 太阳能电池及其制造方法 |
US9059341B1 (en) * | 2014-01-23 | 2015-06-16 | E I Du Pont De Nemours And Company | Method for manufacturing an interdigitated back contact solar cell |
US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
CN106784069A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背表面隧道氧化钝化交指式背结背接触电池制作方法 |
CN108075017A (zh) * | 2016-11-10 | 2018-05-25 | 上海凯世通半导体股份有限公司 | Ibc电池的制作方法 |
CN108538962A (zh) * | 2018-05-07 | 2018-09-14 | 泰州中来光电科技有限公司 | 一种钝化接触的ibc电池的制备方法 |
CN108649079A (zh) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | 具有钝化接触结构的指状交叉背接触太阳电池及其制备方法 |
CN110660881A (zh) * | 2019-08-30 | 2020-01-07 | 泰州中来光电科技有限公司 | 一种无掩膜去除钝化接触电池多晶硅绕镀的方法 |
CN111564503A (zh) * | 2019-09-03 | 2020-08-21 | 国家电投集团西安太阳能电力有限公司 | 一种背结背接触太阳能电池结构及其制备方法 |
US20200279970A1 (en) * | 2017-02-10 | 2020-09-03 | Tempress Ip B.V. | Method of Manufacturing a Passivated Solar Cell and Resulting Passivated Solar Cell |
CN111987188A (zh) * | 2020-08-25 | 2020-11-24 | 常州时创能源股份有限公司 | 一种钝化接触电池的制备方法 |
CN112133793A (zh) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种背结背接触太阳能电池及其制作方法 |
-
2020
- 2020-12-30 CN CN202011611034.6A patent/CN114695593B/zh active Active
Patent Citations (14)
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FR2906405A1 (fr) * | 2006-09-22 | 2008-03-28 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
WO2013087458A1 (de) * | 2011-12-16 | 2013-06-20 | International Solar Energy Research Center Konstanz E.V. | Rückkontakt-solarzelle und verfahren zur herstellung einer rückkontakt-solarzelle |
CN104282782A (zh) * | 2013-07-05 | 2015-01-14 | Lg电子株式会社 | 太阳能电池及其制造方法 |
US9059341B1 (en) * | 2014-01-23 | 2015-06-16 | E I Du Pont De Nemours And Company | Method for manufacturing an interdigitated back contact solar cell |
CN106784069A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背表面隧道氧化钝化交指式背结背接触电池制作方法 |
CN108075017A (zh) * | 2016-11-10 | 2018-05-25 | 上海凯世通半导体股份有限公司 | Ibc电池的制作方法 |
US20200279970A1 (en) * | 2017-02-10 | 2020-09-03 | Tempress Ip B.V. | Method of Manufacturing a Passivated Solar Cell and Resulting Passivated Solar Cell |
CN108538962A (zh) * | 2018-05-07 | 2018-09-14 | 泰州中来光电科技有限公司 | 一种钝化接触的ibc电池的制备方法 |
CN108649079A (zh) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | 具有钝化接触结构的指状交叉背接触太阳电池及其制备方法 |
CN110660881A (zh) * | 2019-08-30 | 2020-01-07 | 泰州中来光电科技有限公司 | 一种无掩膜去除钝化接触电池多晶硅绕镀的方法 |
CN111564503A (zh) * | 2019-09-03 | 2020-08-21 | 国家电投集团西安太阳能电力有限公司 | 一种背结背接触太阳能电池结构及其制备方法 |
CN111987188A (zh) * | 2020-08-25 | 2020-11-24 | 常州时创能源股份有限公司 | 一种钝化接触电池的制备方法 |
CN112133793A (zh) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种背结背接触太阳能电池及其制作方法 |
Non-Patent Citations (3)
Title |
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NAUMAN BIN TANVIR等: "Codiffusion Sources and Barriers for the Assembly of Back-Contact Back-Junction Solar Cells", IEEE JOURNAL OF PHOTOVOLTAICS, vol. 05, no. 06, 30 November 2015 (2015-11-30) * |
李力;姜辰明;黄铭;沈辉: "基于IBC太阳电池的二氧化硅掩膜研究", 中山大学学报(自然科学版), no. 005, 31 December 2014 (2014-12-31) * |
鲁贵林: "N型高效晶体硅太阳电池关键技术研究", 中国博士学位论文全文数据库 工程科技Ⅱ辑, no. 08, pages 042 - 130 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024012162A1 (zh) * | 2022-07-15 | 2024-01-18 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 一种p型ibc电池的制作方法 |
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Effective date of registration: 20240710 Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI CELLS Co.,Ltd. Country or region after: China Patentee after: Atlas Energy Storage Technology Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI CELLS Co.,Ltd. Country or region before: China Patentee before: Atlas sunshine Power Group Co.,Ltd. |