CN111524982A - 太阳电池 - Google Patents

太阳电池 Download PDF

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CN111524982A
CN111524982A CN201910105210.XA CN201910105210A CN111524982A CN 111524982 A CN111524982 A CN 111524982A CN 201910105210 A CN201910105210 A CN 201910105210A CN 111524982 A CN111524982 A CN 111524982A
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李华
靳玉鹏
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Taizhou Longi Solar Technology Co Ltd
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Taizhou Lerri Solar Technology Co Ltd
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Abstract

本申请公开了一种太阳电池，包括p型基底，所述p型基底的正面依次设置有n型掺杂层及正面钝化减反射层，所述p型基底的背面依次设置有背面隧穿钝化层、p型掺杂膜层及背面介质膜层；所述正面钝化减反射层上形成有正面电极，所述正面电极贯穿所述正面钝化减反射层并与所述n型掺杂层接触；所述背面介质膜层上形成有背面铝电极，所述背面铝电极贯穿所述背面介质膜层并与所述p型掺杂膜层接触。随着对p型掺杂膜层掺杂溶度的降低，则不会影响p型基底的少数载流子寿命，因此，背面的横向传输电阻被大幅度降低，提升了电池的整体性能。

Description

太阳电池
技术领域
本发明一般涉及太阳能光伏发电技术领域，具体涉及一种太阳电池。
背景技术
太阳电池是将太阳的光能转换为电能的装置。太阳电池利用光生伏特原理产生载流子，然后使用电极将载流子引出，形成可供利用的电能。
常规钝化发射极背表面电池(Passivated Emitter and Rear Cell；PERC)，钝化发射极背面全扩散电池(Passivated Emitter and Rear Total-diffused Cell；PERT)的使用越来越广泛。然而背面电极的接触区域的复合速率仍然较大，横向传输电阻较高的问题无法同时得到良好的解决，严重的阻碍了太阳电池的效率提升。
目前市场上商业化的PERC结构的背面，均使用局部金属接触的方式，形成电极。这种电池结构在背面，由于收集电流时需要横向传输，硅基底未进行掺杂，电阻率较高，所以横向传输电阻较大，影响太阳电池效率。
而PERT使用背面扩散掺杂，虽然可以降低横向传输电阻。但由于使用银电极，并且高浓度的掺杂无法避免的成为了复合中心，导致降低钝化效率，降低了少数载流子寿命，从而降低的太阳电池的效率。
发明内容
鉴于现有技术中的上述缺陷或不足，期望提供一种太阳电池，用以解决PERC电阻率较高，横向传输电阻较大及PERT随掺杂浓度的增高会形成复合中心，降低了钝化效率，且降低了少数载流子寿命，影响太阳电池效率的问题。
本发明提供一种太阳电池，包括p型基底，所述p型基底的正面依次设置有n型掺杂层及正面钝化减反射层，所述p型基底的背面依次设置有背面隧穿钝化层、p型掺杂膜层及背面介质膜层；所述正面钝化减反射层上形成有正面电极，所述正面电极贯穿所述正面钝化减反射层并与所述n型掺杂层接触；所述背面介质膜层上形成有背面铝电极，所述背面铝电极贯穿所述背面介质膜层并与所述p型掺杂膜层接触。
进一步地，所述背面铝电极包括多条平行设置的铝栅线。
进一步地，所述铝栅线的宽度为50um～200um，相邻所述铝栅线之间的距离为500-2000um。
进一步地，所述背面隧穿钝化层的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅、碳化硅和非晶硅中的任一种。
进一步地，所述背面隧穿钝化层的厚度为1-5nm。
进一步地，p型掺杂膜层的材料包括多晶硅。
进一步地，p型掺杂膜层的材料还包括非晶硅。
进一步地，所述p型掺杂膜层掺杂有IIIA族元素。
进一步地，所述p型掺杂膜层的厚度为10-1000nm。
进一步地，所述p型掺杂膜层的掺杂浓度大于1×1018个/cm3。
进一步地，所述背面介质膜层的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅和碳化硅中的一种或多种组合。
进一步地，所述背面介质膜层的厚度为50-200nm。
上述方案，在p型基底背面形成p型掺杂膜层及背面铝电极，铝作为IIIA族元素，对p型掺杂膜层具有一定的掺杂作用，因此可以降低对p型掺杂膜层区域自身掺杂浓度的要求，随着对掺杂溶度的降低，克服了复合中心的问题，降低了电阻率，减小了横向传输电阻，提高了太阳电池的效率。此外，背面隧穿钝化层及p型掺杂膜层可以为该太阳电池提供良好的表面钝化，有利于提高该太阳电池的光电转换效率。还有，随着对p型掺杂膜层掺杂溶度的降低，则不会影响p型基底的少数载流子寿命，因此，背面的横向传输电阻被大幅度降低，提升了电池的整体性能。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1为本发明实施例提供的太阳电池的结构示意图；
图2为本发明实施例提供的太阳电池的电极示意图；
图3为本发明实施例提供的另一结构太阳电池的结构示意图；
图4为本发明另一实施例提供的太阳电池的结构示意图；
图5为本发明实施例提供的太阳电池的后视图。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释相关发明，而非对该发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与发明相关的部分。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。
如图1-图3所示，本发明提供的太阳电池，包括p型基底1，p型基底1的正面依次设置有n型掺杂层4及正面钝化减反射层2，p型基底1的背面依次设置有背面隧穿钝化层3、p型掺杂膜层9及背面介质膜层8；正面钝化减反射层2上形成有正面电极5，正面电极5贯穿正面钝化减反射层2并与n型掺杂层4接触；背面介质膜层8上形成有背面铝电极6，背面铝电极6贯穿背面介质膜层8并与p型掺杂膜层9接触。
本文所指的正面是该太阳电池使用时迎向太阳的一面，背面是背对太阳的一面。
上述方案，在p型基底1背面形成p型掺杂膜层9及背面铝电极6，铝作为IIIA族元素，对p型掺杂膜层9具有一定的掺杂作用，因此可以降低对p型掺杂膜层9自身掺杂浓度的要求，随着对掺杂溶度的降低，克服了复合中心的问题，降低了电阻率，减小了横向传输电阻，提高了太阳电池的效率。此外，背面隧穿钝化层3及p型掺杂膜层9可以为该太阳电池提供良好的表面钝化，有利于提高该太阳电池的光电转换效率。还有，随着对p型掺杂膜层9掺杂溶度的降低，则不会影响p型基底1的少数载流子寿命，因此，背面的横向传输电阻被大幅度降低，提升了电池的整体性能。
进一步地，背面铝电极6包括多条平行设置的铝栅线14，例如但不限于设置100根铝栅线14，铝栅线14之间可以连接多条栅连接线10，铝栅线14可以与栅连接线10垂直。
作为一种实现方式，正面电极5可以为多条平行设置的银栅线15，银栅线15之间可以连接多条栅连接线7，栅连接线7可以与银栅线15垂直。
进一步地，铝栅线14的宽度为50um～200um，相邻铝栅线14之间的距离为500-2000um，以提高电子收集能力。
此外，如图4、图5所示，铝电极还可以是面状电极12，在采用面状电极12时可以在面状电极12内均匀设置多个银电极13，例如以4×4排布的方式设置16个银电极13，每个银电极的尺寸例如可以是2mm×20mm。
进一步地，正面钝化减反射层2可以是层状结构，例如包括层叠设置的第一膜层和第二膜层，第一膜层与n型掺杂层4接触，第一膜层的折射率大于第二膜层的折射率。例如，第一膜层及第二膜层的材料均可以为氮化硅，第一膜层的折射率可以为2.2，第二膜层的折射率可以为2.0，一定角度的光从光密介质的第一膜层入射到光疏介质的第二膜层后，会发生全反射，因此降低了光线被反射出该太阳电池，故提高了该太阳电池的光利用率，进而提高光电转换能力。当然，除了上述的两层结构外，还可以是多层结构，只要其可以在层间形成全反射，达到减反射即可。
进一步地，背面隧穿钝化层3的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅、碳化硅和非晶硅中的任一种。
进一步地，背面隧穿钝化层3的厚度为1-5nm，以保证其具有较好的钝化性能。
进一步地，p型掺杂膜层9的材料包括多晶硅。
进一步地，p型掺杂膜层9的材料还可以包括非晶硅。
进一步地，p型掺杂膜层9掺杂有IIIA族元素。
进一步地，p型掺杂膜层9的厚度为10-1000nm。
进一步地，p型掺杂膜层9的掺杂浓度大于1×1018个/cm3。
进一步地，背面介质膜层8的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅和碳化硅中的一种或多种组合。
进一步地，背面介质膜层8的厚度为50-200nm，已对其所覆盖的层状结构进行良好的保护。
下面对上述太阳电池的制作工艺进行举例说明：
1、对p型基底1进行正表明结构化。
具体的，取用p型单晶硅片作为基底，使用含有KOH的溶液对该p型基底1正面进行制绒，形成2-5um高的金字塔绒面，以完成正表面织构化。其中，KOH溶液的浓度可以为5％wt，温度80℃。并在此过程使用含有氢氟酸的溶液进行清洗，并在清洗后进行水洗及烘干等工序。
2、在p型基底1的背面形成背面隧穿钝化层3。
例如，背面隧穿钝化层3可以为非晶硅薄层，厚度为5nm。背面p型掺杂层9为掺杂有III族硼元素的非晶硅和多晶硅混合膜层，其中多晶硅比例80％，此掺杂膜层的厚度为200nm，其中硼元素的掺杂浓度为8×1019/cm3。背面隧穿钝化层3的厚度可以为1～5nm。
3、在背面隧穿钝化层3上形成p型掺杂膜层9。
具体地，可以使用低压化学气相沉积方法在背面隧穿钝化层3上沉积非晶硅和多晶硅混合膜层，其中多晶硅比例80％。此非晶硅和多晶硅混合膜层的厚度例如可为100nm、150nm、200nm、500nm等。在非晶硅和多晶硅混合膜层上采用含硼掺杂浆料进行涂布，并使含硼掺杂浆料布满整个非晶硅和多晶硅混合膜层。在涂布过含硼掺杂浆料后，通过900℃热扩散完成背面p型掺杂膜层9的制备，其中硼元素的掺杂浓度为8×1019/cm3。在形成p型掺杂膜层9的过程中，不需要对p型掺杂膜层9进行高浓度的硼掺杂，即可和后续的铝电极形成较好的接触，也不需要高温推进。从而可以降低工艺的温度，从而避免了较高温度的热过程带来的负面效果。
4、在p型基底1的正面形成n型掺杂层4。
可以使用低压化学气相沉积方法在p型基底1的正面上沉积本征多晶硅层。通过管式扩散炉进行POCl3热扩散，一次性形成正面PN结，整个工艺条件为温度750～840℃，时间为85分钟，以完成n型掺杂层的制备。n型掺杂层4的方块电阻可以为150ohm/sq。
5、在n型掺杂层4上形成正面钝化减反射层2。
将上述第4步骤形成过n型掺杂层4后的构件，送入含氢氟酸的漕式清洗机以去除硼硅玻璃和磷硅玻璃及多边缘掺杂。然后然后先后经过NaOH、水洗、氢氟酸洗、以及去离子水的清洗并烘干。随后使用增强型等离子化学气相沉积(Plasma Enhanced ChemicalVapor Deposition；PECVD)在n型掺杂层4的表面沉积SiNx作为正面钝化减反射层2，其中，可以沉积两层SiNx，其中一层SiNx为第一膜层，其折射率可以为2.2，厚度为30nm，另一层SiNx为第二膜层，其折射率可以为2.0,厚度为90nm，这里仅是实例，不是对该发明的限定。
6、在p型掺杂膜层9上形成背面介质膜层8。
例如但不限于背面介质膜层8可以是复合膜层，即可以在p型掺杂膜层上通过原子层沉积(Atomic Layer Deposition；ALD)沉积5-15nm氧化铝作为背面钝化层，例如为5nm、10nm或15nm等，然后背面钝化层通过PECVD沉积60-90nm厚的氮化硅，例如为70nm、85nm、150nm等。氮化硅的折射率可以为2.10。
7、电极制备。
在背面介质膜层8上通过激光等方式刻蚀形成背面铝电极图案通过丝网印刷的方式在背面铝电极图案处涂布含导电成分的电极浆料层，电极浆料层可以是含铝浆料。随后，将其在烧结炉中完成金属化热处理形成相应的电极，其中，电极可以包括背面铝电极及栅连接线10，背面铝电极包括多条平行设置的铝栅线14等。
在正面钝化减反射层2上通过激光等方式刻蚀形成正面电极图案通过丝网印刷的方式在正面电极处涂布含导电成分的电极浆料层，电极浆料层可以是含银浆料。随后，将其在烧结炉中完成金属化热处理形成相应的电极，其中，电极可以包括正面电极及栅连接线7，正面电极包括多条平行设置的银栅线15。
其中，背面铝电极除了采用铝栅线14的方式外，还可以是铝电场。在制作时，首先在背面介质膜层8上通过激光等方式刻蚀形成背面银电极图案及铝电极连接孔11，银电极图案可以是暴露p型掺杂膜层9的孔，例如以4×4排布的方式设置16个孔，每个孔的尺寸例如可以在2mm×20mm左右。在孔的位置涂覆含银浆料，随后在背面介质膜层8上除涂覆含银浆料的其余位置涂覆含铝浆料，含铝浆料亦填充于铝电极连接孔内，然后进行金属化热处理，且金属化热处理的加热峰值温度可以为400-750℃，例如，优选的加热峰值温度为650℃，以形成银电极13。
以上描述仅为本申请的较佳实施例以及对所运用技术原理的说明。本领域技术人员应当理解，本申请中所涉及的发明范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离发明构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本申请中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。

Claims (12)

1.一种太阳电池，其特征在于，包括p型基底，所述p型基底的正面依次设置有n型掺杂层及正面钝化减反射层，所述p型基底的背面依次设置有背面隧穿钝化层、p型掺杂膜层及背面介质膜层；所述正面钝化减反射层上形成有正面电极，所述正面电极贯穿所述正面钝化减反射层并与所述n型掺杂层接触；所述背面介质膜层上形成有背面铝电极，所述背面铝电极贯穿所述背面介质膜层并与所述p型掺杂膜层接触。
2.根据权利要求1所述的太阳电池，其特征在于，所述背面铝电极包括多条平行设置的铝栅线。
3.根据权利要求2所述的太阳电池，其特征在于，所述铝栅线的宽度为50um～200um，相邻所述铝栅线之间的距离为500-2000um。
4.根据权利要求1-3任一项所述的太阳电池，其特征在于，所述背面隧穿钝化层的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅、碳化硅和非晶硅中的任一种。
5.根据权利要求1-3任一项所述的太阳电池，其特征在于，所述背面隧穿钝化层的厚度为1-5nm。
6.根据权利要求1-3任一项所述的太阳电池，其特征在于，p型掺杂膜层的材料包括多晶硅。
7.根据权利要求6所述的太阳电池，其特征在于，p型掺杂膜层的材料还包括非晶硅。
8.根据权利要求6所述的太阳电池，其特征在于，所述p型掺杂膜层掺杂有IIIA族元素。
9.根据权利要求6所述的太阳电池，其特征在于，所述p型掺杂膜层的厚度为10-1000nm。
10.根据权利要求8所述的太阳电池，其特征在于，所述p型掺杂膜层的掺杂浓度大于1×1018个/cm3。
11.根据权利要求1-3任一项所述的太阳电池，其特征在于，所述背面介质膜层的材料包括氧化硅、氧化铝、氧化钛、氮化硅、氮氧化硅和碳化硅中的一种或多种组合。
12.根据权利要求11所述的太阳电池，其特征在于，所述背面介质膜层的厚度为50-200nm。
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