CN111564521A - 一种全绒面ibc太阳电池制备方法 - Google Patents
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Abstract
本专利提供了一种全绒面IBC太阳电池制备方法,包括清洗制绒工艺、选择性发射极工艺、沉积掩膜层工艺、制备表面场工艺、制备减反射层工艺和电极制作工艺。本发明通过将电极移至背面而增加前表面光吸收率,由此提高短路电流。同时所得电池两面全为绒面极大减小了光反射率,进一步提高光照俘获量,大大简化了工艺流程及降低了成本。
Description
技术领域
本发明属于太阳电池领域,特别是涉及一种全绒面太阳电池。
背景技术
基于降低度电成本提高电池效率的宗旨,IBC(Interdigitatedbackcontact)电池以优异的光学吸收及较低内阻的特点被光伏研究者所青睐。相比N-PERT、PERC高效电池而言,IBC电池的电极均位于背面不仅方便了组件封装而且为优化串联电阻提供了较大空间。目前生产IBC电池在制作P+掺杂区及N+掺杂区时采用光刻掩膜法,因工艺流程繁多导致生产成本大幅增加。与现有技术的IBC电池工艺相比,本发明所涉及的制备方法具有生产成本低且工艺步骤少的优点。
发明内容
本发明的主要目的在于研制一种全绒面IBC太阳电池制备方法,提出采用氮化硅作为掩膜层,然后通过激光烧蚀法开窗实现另一区的掺杂,大大简化了工艺流程及降低了成本。
一种全绒面IBC太阳电池制备方法,其特征在于,包括清洗制绒工艺、选择性发射极工艺、沉积掩膜层工艺、制备表面场工艺、制备减反射层工艺和电极制作工艺;
所述清洗制绒工艺包括:
1)将N型硅片放置NaOH及H2O2液中进行硅片表面的机械损伤层和表面油污的清洗;
2)在NaOH及单晶制绒添加剂混合液中进行硅片表面织构化处理;
3)在HCl/HF混酸液中进行硅片表面所沾NaOH液的中和、金属离子及氧化层的清洗;
4)进行预脱水及热烘干处理;
所述选择性发射极工艺包括:
1)将所述清洗制绒工艺处理后的硅片单槽双片正面贴正面放置,在三溴化硼氛围中对电池背面进行硼掺杂;
2)在硼扩散结束降温,通入氧气对硼扩散面进行氧化形成硼硅玻璃(BSG)层;
3)在HF酸液湿法设备中完成在硼扩散时在电池背面所形成BSG的减薄处理;
所述制备沉积掩膜层工艺为在所述选择性发射极工艺中减薄处理后的BSG层上用PECVD完成背面氮化硅层的沉积;
所述制备表面场工艺包括:
1)通过激光烧蚀法在电池背面进行磷掺杂区的开窗,去除BSG层和BSG层上的氮化硅层;
2)经18%-20%的碱液处理去除开窗区表面处的硅,降低因激光烧蚀造成的表面损伤而引入的载流子复合速率;
3)再将硅片单槽单片放置,在管式炉中进行双面磷掺杂,同时形成前表面场和背表面场区;
4)将形成背表面场区和前表面场的硅片放置在HF酸液中进行表面磷扩散形成磷硅玻璃(PSG)的减薄处理;
所述制备减反射层工艺包括
1)将所述减薄后的硅片用PECVD设备完成电池正面减反射层的沉积;
2)将所述完成正面减反射层沉积的硅片在PECVD中进行电池背面减反射层的沉积处理;
所述电极制作工艺包括
1)将所述制备减反射层工艺完成后的硅片印刷第一道烧穿型浆料,形成点断式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
2)再将完成所述第一道印刷烧穿型浆料的硅片印刷第二道线式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
3)第三道及第四道均分步印刷绝缘浆料,二次印刷绝缘浆料的目的为保证主栅线与硼掺杂区及磷掺杂区副栅线间的良好绝缘性;
4)最后将印刷完所述第四道绝缘浆料的硅片进行第五道主栅线银铝浆料的印刷,用于导出电池所产生的电流;
优选的,在所述选择性发射极工艺中,所述电池背面硼掺杂的扩散方阻为130-155Ω·cm,扩散温度为700-1100℃。
优选的,在所述选择性发射极工艺中,所述硼扩散结束后降温至700-900℃。
优选的,在所述制备沉积掩膜层工艺的背面氮化硅层沉积膜厚为40-100nm。
优选的,在所述制备表面场工艺中,将去除开窗区对应衬底表面处约4-7um的硅。
优选的,在所述制备表面场工艺中,形成背表面场区的温度为700-1100℃,方阻为100-200Ω·cm。
优选的,在所述制备表面场工艺中,所述形成前表面场的扩散方阻为100-200Ω·cm,扩散温度为700-1100℃。
优选的,在所述制备减反射层工艺中,所述电池正面减反射层沉积的折射率在2.0-2.2,温度为300-600℃。
优选的,在所述制备减反射层工艺中,所述电池背面减反射层的折射率在2.0-2.2,工艺温度为300-600℃。
本发明是一种全绒面IBC太阳电池制备方法,通过将电极移至背表面而增加前表面光吸收率,由此提高短路电流。同时所得电池前表面和背表面全为绒面极大减小了光反射率,进一步提高光照俘获量。本发明与现有技术相比存在以下优点和积极效果:
1)优化工艺方案降低制造成本;
2)工艺简单,降低了引入缺陷的概率;
3)方便了出现电池效率下降及缺陷问题时的工艺段源头分析。
附图说明
图1 IBC电池结构图
图2 IBC电池工艺流程图
具体实施方式
实施例
下面结合实施例对本发明作进一步的说明。本发明包含以下内容,但并不仅限于以下内容。
为了解决上述现有技术的不足,本发明提供一种全绒面IBC太阳电池制备方法,其步骤如下:
(1)所述清洗制绒包括:
1)将N型硅片放置NaOH及H2O2液中进行硅片表面的机械损伤层和表面油污的清洗;
2)在NaOH及单晶制绒添加剂混合液中进行硅片表面织构化处理;
3)在HCl/HF混酸液中进行硅片表面所沾NaOH液的中和、金属离子及氧化层的清洗;
4)进行预脱水及热烘干处理;
(2)所述制备选择性发射极包括:
1)将步骤(1)处理后的硅片单槽双片正面贴正面放置,在三溴化硼氛围中对电池背面进行硼掺杂;
2)在硼扩散结束降温,通入氧气对硼扩散面进行氧化形成BSG层;
3)在HF酸液湿法设备中完成在硼扩散时在电池背面所形成BSG的减薄处理;
(3)所述沉积掩膜层包括:
1)在步骤(2)中减薄BSG后的硅片上用PECVD设备完成背面氮化硅层的沉积,膜厚控制范围40-120nm;
(4)所述制备表面场包括:
1)首先通过激光烧蚀法在电池背面进行磷掺杂区的开窗,去除BSG层和BSG层上的氮化硅层;
2)其次,经18%-20%的碱液处理去除开窗区表面处的硅,,降低因激光烧蚀造成的表面损伤而引入的载流子复合速率;
3)再将硅片单槽单片放置,在管式炉中进行双面磷掺杂,同时形成前表面场和背表面场区;最后,将完成表面场的硅片在HF酸液中进行表面磷扩散形成PSG的减薄处理;
(5)所述制备减反射层工艺包括:
1)将步骤(4)中经PSG减薄后,利用PECVD在PSG上完成电池正面减反射层的沉积,折射率范围在2.0-2.2,工艺温度为300-600℃;
2)其次,在PECVD中进行电池背面减反射层处理,折射率范围在2.0-2.2,工艺温度为300-600℃;
(6)所述电极制作工艺包括五步丝网印刷,具体为:
1)第一道印刷烧穿型浆料,形成点断式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
2)第二道印刷线式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
3)第三道及第四道均分步印刷绝缘浆料,二次印刷绝缘浆料的目的为保证主栅线与P+区及N+区副栅线间的良好绝缘性;
4)第五道同时印刷正负主栅线银铝浆料,用于导出电池所产生的电流;
以上所述,仅为本发明的较佳实施例,并非对本发明任何形式上和实质上的限制,应当指出,对于本技术领域的普通技术人员,在不脱离本发明方法的前提下,还将可以做出若干改进和补充,这些改进和补充也应视为本发明的保护范围。凡熟悉本专业的技术人员,在不脱离本发明的精神和范围的情况下,当可利用以上所揭示的技术内容而做出的些许更动、修饰与演变的等同变化,均为本发明的等效实施例;同时,凡依据本发明的实质技术对上述实施例所作的任何等同变化的更动、修饰与演变,均仍属于本发明的技术方案的范围内。
Claims (9)
1.一种全绒面IBC太阳电池制备方法,其特征在于,包括清洗制绒工艺、选择性发射极工艺、沉积掩膜层工艺、制备表面场工艺、制备减反射层工艺和电极制作工艺;
所述清洗制绒工艺包括:
1)将N型硅片放置NaOH及H2O2液中进行硅片表面的机械损伤层和表面油污的清洗;
2)在NaOH及单晶制绒添加剂混合液中进行硅片表面织构化处理;
3)在HCl/HF混酸液中进行硅片表面所沾NaOH液的中和、金属离子及氧化层的清洗;
4)进行预脱水及热烘干处理;
所述选择性发射极工艺包括:
1)将所述清洗制绒工艺处理后的硅片单槽双片正面贴正面放置,在三溴化硼氛围中对电池背面进行硼掺杂;
2)在硼扩散结束降温,通入氧气对硼扩散面进行氧化形成BSG层;
3)在HF酸液湿法设备中完成在硼扩散时在电池背面所形成BSG的减薄处理;
所述制备沉积掩膜层工艺为在所述选择性发射极工艺中减薄处理后的BSG层上用PECVD完成背面氮化硅层的沉积;
所述制备表面场工艺包括:
1)通过激光烧蚀法在电池背面进行磷掺杂区的开窗,去除BSG层和BSG层上的氮化硅层;
2)经18%-20%的碱液处理去除开窗区表面处的硅;
3)再将硅片单槽单片放置,在管式炉中进行双面磷掺杂,同时形成前表面场和背表面场区;
4)将形成背表面场区和前表面场的硅片放置在HF酸液中进行表面磷扩散形成PSG的减薄处理;
所述制备减反射层工艺包括
1)将所述减薄后的硅片用PECVD设备完成电池正面减反射层的沉积;
2)将所述完成正面减反射层沉积的硅片在PECVD中进行电池背面减反射层的沉积处理;
所述电极制作工艺包括
1)将所述制备减反射层工艺完成后的硅片印刷第一道烧穿型浆料,形成点断式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
2)再将完成所述第一道印刷烧穿型浆料的硅片印刷第二道线式副栅线银、铜、镀银铜、镀镍铜、镀锡铜或合金浆料;
3)第三道及第四道均分步印刷绝缘浆料;
4)最后将印刷完所述第四道绝缘浆料的硅片进行第五道主栅线银铝浆料的印刷。
2.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述选择性发射极工艺中,所述电池背面硼掺杂的扩散方阻为130-155Ω·cm,扩散温度为700-1100℃。
3.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述选择性发射极工艺中,所述硼扩散结束后降温至700-900℃。
4.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备沉积掩膜层工艺的背面氮化硅层沉积膜厚为40-120nm。
5.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备表面场工艺中,将去除开窗区表面处约4-7um的硅。
6.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备表面场工艺中,形成背表面场区的温度为700-1100℃,方阻为100-200Ω·cm。
7.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备表面场工艺中,所述形成前表面场的扩散方阻为100-200Ω·cm,扩散温度为700-1100℃。
8.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备减反射层工艺中,所述电池正面减反射层沉积的折射率在2.0-2.2,温度为300-600℃。
9.根据权利要求1所述的一种全绒面IBC太阳电池制备方法,其特征在于,在所述制备减反射层工艺中,所述电池背面减反射层的折射率在2.0-2.2,工艺温度为300-600℃。
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