CN110634973A - 一种新型晶硅太阳电池及其制备方法 - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 190
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- 238000002161 passivation Methods 0.000 claims abstract description 71
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052796 boron Inorganic materials 0.000 abstract description 17
- 238000005215 recombination Methods 0.000 abstract description 15
- 230000006798 recombination Effects 0.000 abstract description 15
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- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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Abstract
本发明公开了一种新型晶硅太阳电池,包括:第一背面N型硅和背面N型硅,所述第一背面N型硅和所述背面N型硅交替设置连接,第一背面N型硅的磷掺杂浓度大于背面N型硅的磷掺杂浓度;在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
Description
技术领域
本发明涉及太阳电池技术领域,具体涉及一种新型晶硅太阳电池及其制备方法。
背景技术
相比于常规的晶硅太阳电池,IBC(Interdigitated Back Contact)电池的正面没有电极,不会对光线造成遮挡,因此光学损失少,能够实现更高的光电转换效率,是光伏行业的研究热点。目前大部分IBC电池的研究均基于N型硅片进行,但是N型硅片成本较高,不利于商业化应用,而随着P型硅片少子寿命的不断提高,P型IBC电池将成为未来晶硅太阳电池的重要发展方向。
在IBC电池的正面通常需要制作一层浓度较高的掺杂层,称为前表面场,以场效应钝化作用减小电池正表面的复合速率。但是,现有技术采用硼扩散工艺制备P型IBC电池的前表面场,需要多次掩膜和清洗,制备流程复杂,而且950℃以上的高温硼扩散工艺会影响P型硅片的少子寿命,进而影响电池效率。此外,现有技术背面N型硅掺杂浓度较高,复合速率较快。
因此,亟待一种新型晶硅太阳电池及其制备方法的出现,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
发明内容
为了解决上述技术问题,本发明提出了一种新型晶硅太阳电池及其制备方法,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
为了达到上述目的,本发明的技术方案如下:
一种新型晶硅太阳电池,包括:第一背面N型硅和背面N型硅,所述第一背面N型硅和所述背面N型硅交替设置连接,第一背面N型硅的磷掺杂浓度大于背面N型硅的磷掺杂浓度。
本发明提供的一种新型晶硅太阳电池及其制备方法,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在上述技术方案的基础上,还可做如下改进:
作为优选的方案,新型晶硅太阳电池,包括:第二金属电极和背面钝化层,所述二金属电极穿透过所述背面钝化层并与第一背面N型硅欧姆接触。
作为优选的方案,所述背面钝化层正面设有背面N型硅。
作为优选的方案,新型晶硅太阳电池,包括:第一金属电极和P型硅,在所述背面N型硅和背面钝化层中开设有开槽,所述第一金属电极穿透过开槽与所述P型硅欧姆接触,所述第一金属电极与所述背面N型硅之间间隔设有背面钝化层。
作为优选的方案,从背面N型硅的正面由里到外依次设有P型硅片、正面N型硅和正面钝化层。
作为优选的方案,一种新型晶硅太阳电池的制备方法,包括以下步骤:
1)P型硅片表面制绒,P型硅片背面抛光;
2)P型硅片正面和背面均磷扩散,在P型硅片正面和背面形成正面N型硅、背面N型硅、正面磷硅玻璃和背面磷硅玻璃;
3)P型硅片背面激光掺杂,增大激光掺杂区域的磷掺杂浓度;
4)P型硅片正面和背面去除正面磷硅玻璃和背面磷硅玻璃,对P型硅片背面激光开槽,开槽区域内去除背面N型硅,步骤3)的激光掺杂图形与步骤4)的激光开槽图形相互错位设置;
5)P型硅片正面和背面沉积有正面钝化层和背面钝化层;
6)P型硅片背面激光开槽,步骤6)激光开槽图形与步骤4)激光开槽图形位置相同,开槽宽度小于步骤4)中的开槽宽度,去除激光开槽区域内的背面钝化层;
7)P型硅片的背面印刷铝浆和银浆,铝浆印刷对准激光开槽区域,银浆对准激光掺杂区域,烧结。
作为优选的方案,步骤4)中用氢氟酸去除P型硅片正面和背面的正面磷硅玻璃和背面磷硅玻璃,激光开槽图形为栅线。
作为优选的方案,步骤5)中P型硅片正面和背面均热氧化,形成氧化硅层,在氧化硅层正面和背面沉积氮化硅,形成正面钝化层和背面钝化层,所述正面钝化层和所述背面钝化层为氧化硅和氮化硅叠层。
作为优选的方案,步骤7)中P型硅片背面印刷铝浆和银浆,铝栅线对准步骤6)的激光开槽区域,银栅线对准步骤3)的激光掺杂区域,烧结后,铝浆和P型硅片的界面处形成P型硅,银浆烧穿过背面钝化层并与第一背面N型硅接触。
作为优选的方案,步骤7)中P型硅片背面印刷铝浆和银浆图形均为栅线。
附图说明
图1为本发明实施例提供的一种新型晶硅太阳电池的结构图;
图2为本发明实施例提供的一种新型晶硅太阳电池的制备方法的流程图。
1.正面钝化层,2.正面N型硅,3.P型硅片,4.背面N型硅,5.背面钝化层,6.P型硅,7.第一金属电极,8.第一背面N型硅,9.第二金属电极。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
下面结合附图详细说明本发明的优选实施方式。
为了达到本发明的目的,如图1-2所示,本实施例中的一种新型晶硅太阳电池,包括:第一背面N型硅8和背面N型硅4,所述第一背面N型硅8和所述背面N型硅4交替设置连接,第一背面N型硅8的磷掺杂浓度大于背面N型硅4的磷掺杂浓度。
本发明提供的一种新型晶硅太阳电池及其制备方法,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,新型晶硅太阳电池,包括:第二金属电极9和背面钝化层5,所述二金属电极9穿透过所述背面钝化层5并与第一背面N型硅8欧姆接触。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,所述背面钝化层5正面设有背面N型硅4。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,新型晶硅太阳电池,包括:第一金属电极7和P型硅6,在所述背面N型硅4和背面钝化层5中开设有开槽,所述第一金属电极7穿透过开槽与所述P型硅6欧姆接触,所述第一金属电极7与所述背面N型硅4之间间隔设有背面钝化层5。
采用上述实施例,当所述第一金属电极与所述背面N型硅之间间隔设有背面钝化层,这样可以防止第一金属电极7和背面N型硅4两者接触出现漏电。
在一些实施例中,从背面N型硅4的正面由里到外依次设有P型硅片3、正面N型硅2和正面钝化层1。
采用上述实施例,正面钝化层1起到减反射的作用。
在一些实施例中,一种新型晶硅太阳电池的制备方法,包括以下步骤:
1)P型硅片3表面制绒,P型硅片3背面抛光;
2)P型硅片3正面和背面均磷扩散,在P型硅片3正面和背面形成正面N型硅2、背面N型硅4、正面磷硅玻璃和背面磷硅玻璃;
3)P型硅片3背面激光掺杂,增大激光掺杂区域的磷掺杂浓度;
4)P型硅片3正面和背面去除正面磷硅玻璃和背面磷硅玻璃,对P型硅片3背面激光开槽,开槽区域内去除背面N型硅4,步骤3)的激光掺杂图形与步骤4)的激光开槽图形相互错位设置;
5)P型硅片3正面和背面沉积有正面钝化层1和背面钝化层5;
6)P型硅片3背面激光开槽,步骤6)激光开槽图形与步骤4)激光开槽图形位置相同,步骤6)的开槽宽度小于步骤4)中的开槽宽度,去除激光开槽区域内的背面钝化层5;
7)P型硅片3的背面印刷铝浆和银浆,铝浆印刷对准激光开槽区域,银浆对准激光掺杂区域,烧结。
采用上述实施例,在保证正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,步骤4)中用氢氟酸去除P型硅片3正面和背面的正面磷硅玻璃和背面磷硅玻璃,激光开槽图形为栅线。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,步骤5)中P型硅片3正面和背面均热氧化,形成氧化硅层,在氧化硅层正面和背面沉积氮化硅,形成正面钝化层1和背面钝化层5,所述正面钝化层1和所述背面钝化层5为氧化硅和氮化硅叠层。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,步骤7)中P型硅片3背面印刷铝浆和银浆,铝栅线对准步骤6)的激光开槽区域,银栅线对准步骤3)的激光掺杂区域,烧结后,铝浆和P型硅片3的界面处形成P型硅,银浆烧穿过背面钝化层5并与第一背面N型硅8接触。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
在一些实施例中,步骤7)中P型硅片3背面印刷铝浆和银浆图形均为栅线。
采用上述实施例,在保证P型硅片正表面钝化效果的前提下,规避硼扩散工艺,简化制备流程,此外,还减小背面N型硅区域的复合速率,提高电池效率。
本发明提供的新型晶硅太阳电池,其中P型硅片3为硼或镓掺杂的P型硅基体,在P型硅片3的正面设有磷掺杂浓度较低的正面N型硅2,正面N型硅2与P型硅片3连接形成浮动结。在正面N型硅2的正面设有正面钝化层1,该正面钝化层1同时起到减反射的作用,正面钝化层1为氮化硅或氧化硅和氮化硅叠层。在P型硅片3的背面设有磷掺杂浓度较低的背面N型硅4,背面N型硅4与P型硅片3连接形成PN结。在N型硅4的背面设有背面钝化层5,背面钝化层5为氮化硅或氧化硅和氮化硅叠层。在背面N型硅4和背面钝化层5上均开设有开槽,所述开槽为开孔,第一金属电极7穿透过开槽与P型硅6欧姆接触,第一金属电极7可以为铝,P型硅6又称为局部背表面场,P型硅6为铝掺杂浓度较高的硅。第一金属电极7和背面N型硅4被背面钝化层5隔开,防止第一金属电极7和背面N型硅4两者接触出现漏电。此外,磷掺杂浓度较高的第一背面N型硅8与所述背面N型硅4交替设置连接,第二金属电极9穿透过背面钝化层5与第一背面N型硅8欧姆接触,第二金属电极9可以为银。
磷掺杂浓度较低的正面N型硅2,其方阻为100~200Ω/sq;磷掺杂浓度较低的背面N型硅4,其方阻为100~200Ω/sq;磷掺杂浓度较高的第一背面N型硅8,其方阻为50~100Ω/sq;P型硅6为铝掺杂浓度较高的硅,其掺杂浓度为1E18cm-3~1E19cm-3。
本发明提供的新型晶硅太阳电池,包括以下步骤:
1)P型硅片3表面制绒,背面抛光,形成P型硅片3正面为绒面、P型硅片3背面平整的结构;
2)P型硅片3正面和背面双面磷扩散,在P型硅片3正面和背面两面形成磷掺杂浓度较低的N型硅,N型硅包括:正面N型硅2和背面N型硅4,在N型硅的表面还有磷扩散形成的磷硅玻璃;
3)P型硅片3背面对背面N型硅4激光掺杂,增大激光掺杂区域的磷掺杂浓度,得到第一背面N型硅8,激光掺杂图形为栅线。
4)用氢氟酸去除P型硅片3正面和背面的磷硅玻璃,对背面激光开槽,去除开槽区域内的背面N型硅4,开槽图形为栅线,步骤3)的激光掺杂图形与步骤4)的激光开槽图形相互错位设置。
5)P型硅片3正面和背面热氧化,形成氧化硅薄层,氧化硅薄层的厚度为1~10nm,在P型硅片3正面和背面分别通过PECVD(等离子增强化学气相沉积技术)沉积氮化硅,形成正面钝化层1和背面钝化层5,正面钝化层1和背面钝化层5均为氧化硅和氮化硅叠层。
6)P型硅片3背面激光开槽,步骤6)激光开槽图形与步骤4)激光开槽图形位置相同,但栅线宽度更细,去除开槽区域内的背面钝化层5,露出P型硅片3。
7)P型硅片3背面印刷铝浆和银浆,印刷图形均为栅线,铝栅线对准步骤6)的激光开槽区域,银栅线对准步骤3)的激光掺杂区域,烧结后,铝浆和P型硅片3的界面处形成铝掺杂浓度较高的P型硅6,银浆烧穿背面钝化层5,银浆与背面磷掺杂浓度较高的第一背面N型硅8接触。
本发明提供一种新型晶硅太阳电池及其制备方法,具有以下有益效果:
1)本发明提供一种新型晶硅太阳电池及其制备方法,采用浮动结作为P型硅片正表面的钝化结构,在保证正表面钝化效果的前提下,规避了高温硼扩散工艺,一方面简化制备流程,另一方面避免了硼扩散的高温对P型硅基体少子寿命的影响。
2)P型硅片正面和背面的磷掺杂用一步扩散完成,提高了扩散反应效率;
3)本发明提供一种新型晶硅太阳电池及其制备方法,在P型硅片背表面采用选择性接触结构,在保证背面N型硅与金属电极有较小接触电阻的同时,减小背面N型硅区域的复合速率,提高电池效率。
一种新型晶硅太阳电池的制备方法在太阳电池产品中的应用。
以上的仅是本发明的优选实施方式,应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (10)
1.一种新型晶硅太阳电池,其特征在于,包括:第一背面N型硅和背面N型硅,所述第一背面N型硅和所述背面N型硅交替设置连接,第一背面N型硅的磷掺杂浓度大于背面N型硅的磷掺杂浓度。
2.根据权利要求1所述的新型晶硅太阳电池,其特征在于,包括:第二金属电极和背面钝化层,所述二金属电极穿透过所述背面钝化层并与第一背面N型硅欧姆接触。
3.根据权利要求2所述的新型晶硅太阳电池,其特征在于,所述背面钝化层正面设有背面N型硅。
4.根据权利要求3所述的新型晶硅太阳电池,其特征在于,包括:第一金属电极和P型硅,在所述背面N型硅和背面钝化层中开设有开槽,所述第一金属电极穿透过开槽与所述P型硅欧姆接触,所述第一金属电极与所述背面N型硅之间间隔设有背面钝化层。
5.根据权利要求4所述的新型晶硅太阳电池,其特征在于,从背面N型硅的正面由里到外依次设有P型硅片、正面N型硅和正面钝化层。
6.一种新型晶硅太阳电池的制备方法,其特征在于,包括以下步骤:
1)P型硅片表面制绒,P型硅片背面抛光;
2)P型硅片正面和背面均磷扩散,在P型硅片正面和背面形成正面N型硅、背面N型硅、正面磷硅玻璃和背面磷硅玻璃;
3)P型硅片背面激光掺杂,增大激光掺杂区域的磷掺杂浓度;
4)P型硅片正面和背面去除正面磷硅玻璃和背面磷硅玻璃,对P型硅片背面激光开槽,开槽区域内去除背面N型硅,步骤3)的激光掺杂图形与步骤4)的激光开槽图形相互错位设置;
5)P型硅片正面和背面沉积有正面钝化层和背面钝化层;
6)P型硅片背面激光开槽,步骤6)激光开槽图形与步骤4)激光开槽图形位置相同,开槽宽度小于步骤4)中的开槽宽度,去除激光开槽区域内的背面钝化层;
7)P型硅片的背面印刷铝浆和银浆,铝浆印刷对准激光开槽区域,银浆对准激光掺杂区域,烧结。
7.根据权利要求6所述的新型晶硅太阳电池的制备方法,其特征在于,步骤4)中用氢氟酸去除P型硅片正面和背面的正面磷硅玻璃和背面磷硅玻璃,激光开槽图形为栅线。
8.根据权利要求6所述的新型晶硅太阳电池的制备方法,其特征在于,步骤5)中P型硅片正面和背面均热氧化,形成氧化硅层,在氧化硅层正面和背面沉积氮化硅,形成正面钝化层和背面钝化层,所述正面钝化层和所述背面钝化层为氧化硅和氮化硅叠层。
9.根据权利要求6所述的新型晶硅太阳电池的制备方法,其特征在于,步骤7)中P型硅片背面印刷铝浆和银浆,铝栅线对准步骤6)的激光开槽区域,银栅线对准步骤3)的激光掺杂区域,烧结后,铝浆和P型硅片的界面处形成P型硅,银浆烧穿过背面钝化层并与第一背面N型硅接触。
10.根据权利要求6所述的新型晶硅太阳电池的制备方法,其特征在于,步骤7)中P型硅片背面印刷铝浆和银浆图形均为栅线。
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