CN114512556B - Photoelectric detector based on asymmetric metamaterial structure - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention discloses a photoelectric detector based on an asymmetric metamaterial structure. The photoelectric detector based on the asymmetric metamaterial structure can be composed of one metamaterial sensitive unit or a plurality of metamaterial sensitive units in an array mode. The metamaterial sensitive unit consists of an asymmetric electromagnetic resonance structure and a conversion structure. When the electromagnetic wave-based direct-current conversion device works, electromagnetic waves are coupled with an asymmetric electromagnetic resonance structure to generate a local strong magnetic field, free carriers of the electromagnetic wave-based direct-current conversion device are deflected under the action of generated Lorentz force by placing the conversion structure in the local strong magnetic field and have directional movement components, and then direct-current potential difference is formed by accumulating at the physical boundary of the conversion structure, so that the conversion from a high-frequency electromagnetic wave (light) signal to direct current is realized. The photoelectric detector provided by the invention has the outstanding advantages of simple structure, high detection speed, wide response wave band range, low processing difficulty and manufacturing cost and the like.
Description
Technical Field
The invention belongs to the technical field of novel photoelectricity, and particularly relates to a photoelectric detector based on an asymmetric structure.
Background
Optical signals are one of important signals that we can directly accept in daily life, and photoelectric conversion is one of important ways to effectively use optical signals. At present, photoelectric conversion and detection are mainly realized based on semiconductor photoelectric effect and PN solid, and the existing photoelectric detection means have obvious limitations in the aspects of response speed, detection wave band and the like due to the limitation of physical mechanism of materials, so that the photoelectric detection technology for realizing quick and broadband response becomes an important research direction. On the other hand, a new material-metamaterial with artificially constructed wavelength magnitude has been developed rapidly in recent years, and has special advantages in the aspect of electromagnetic wave control. By utilizing the design thought of the metamaterial, a novel photoelectric detection method is obtained, and the defects of the traditional method in the aspects of response speed and applicable wave bands are overcome.
Disclosure of Invention
The invention aims to provide a photoelectric detector based on an asymmetric metamaterial structure.
The photoelectric detector based on the asymmetric metamaterial structure provided by the invention comprises at least one metamaterial sensitive unit.
The photoelectric detector based on the asymmetric metamaterial structure can be composed of only a single metamaterial sensitive unit, and can also be composed of a plurality of metamaterial sensitive units in an array mode. The detector array formed by the metamaterial sensitive units can improve the photoelectric detection performance, and can widen the application range, such as imaging, photoelectric calculation and the like, of a series of functions related to photoelectric conversion.
The metamaterial sensitive unit consists of an asymmetric electromagnetic resonance structure and a conversion structure, the conversion structure is arranged in an area surrounded by the asymmetric electromagnetic resonance structure, and the whole structure is arranged on a low-loss substrate. When electromagnetic waves irradiate the metamaterial sensitive unit, resonant current or an electric field is formed on the asymmetric electromagnetic resonant structure, so that a local magnetic field is generated, and the intensity of the local magnetic field is obviously enhanced compared with that of the incident electromagnetic waves. The conversion structure in the metamaterial sensitive unit is placed in a local strong magnetic field, and free carrier movement of the conversion structure is deflected under the combined action of an electric field and a magnetic field due to the generated lorentz force. The lorentz force has components along the same direction in the oscillation period of the electromagnetic wave, so that the free carrier motion in the conversion structure also comprises directional movement components, thereby accumulating to generate negative potential at one end of the physical boundary of the conversion structure and inducing to generate positive potential at the other end, and forming direct current potential difference. By arranging electrodes at two ends of the physical boundary of the conversion structure, direct current or voltage signal output can be obtained, so that the conversion from high-frequency electromagnetic wave (light) signals to direct current is realized.
The asymmetric electromagnetic resonance structure has asymmetry under single or multiple symmetry standards and has sub-wavelength dimensions, and the asymmetric structure mainly aims to realize coupled resonance with the electromagnetic wave to be measured and generate high electric field and magnetic field enhancement. The asymmetric electromagnetic resonant structure may be geometrically continuous in shape or a multimeric structure composed of a plurality of discrete structures. Specifically, as shown in fig. 1, the asymmetric electromagnetic resonance structure may be formed by a U-shaped groove and a flat plate, the region surrounded by the U-shaped groove and the flat plate forms a resonance cavity, and the conversion structure is disposed in the resonance cavity.
The component materials of the asymmetric electromagnetic resonance structure need to meet the basic requirements of electromagnetic resonance on materials, and can be gold, silver, copper and other good conductor metals, or heavy doped or undoped semiconductors such as silicon, germanium, gallium arsenide and the like, wherein the elements doped in the heavy doped or undoped semiconductors comprise boron element, phosphorus element, arsenic element and the like; tiO may also be 2 、BaTiO 3 And dielectric materials.
The conversion structure is a structure which actually generates photoelectric conversion and is required to be positioned in a magnetic field enhancement area generated by the asymmetric resonance structure so as to generate Lorentz force. The conversion structure can be a single structure separated from each other or a continuous structure; either as a structure with a separate geometry or as a block of doped regions on the substrate. The conversion structure is composed of a material with free carriers, and can be semiconductor materials such as Si, gaAs and the like doped with n-type or p-type, or Bi and Cd 3 As 2 The semi-metal materials can also beIs graphene and MoS 2 And two-dimensional materials.
The substrate is made of materials with low loss to the incident electromagnetic wave, such as Teflon, FR-4 and the like in a microwave band, high-purity Si, high-purity GaAs and the like in a terahertz band, glass, quartz and the like in a visible light band, and the specific selection depends on a working band.
The metamaterial sensitive units can be arranged in a periodic array, and the cumulative enhancement of the total conversion voltage can be realized by connecting the units in series; by connecting the units in parallel, a cumulative enhancement of the total switching current can be achieved. The cascade mode of the periodic structure is not limited to simple series connection or parallel connection, and can be mixed in series and parallel connection, and the specific mode is determined according to requirements.
The beneficial effects of the invention are as follows:
1) The photoelectric conversion process is completely realized by artificial structural coupling, and a PN junction structure which is necessary for a traditional photoelectric detection device is not needed, so that various parasitic effects are avoided, and the photoelectric detection device can have the highest femtosecond-level ultra-fast photoelectric detection speed according to the working wavelength;
2) In the invention, the response wavelength of the target electromagnetic wave can be adjusted by changing the parameters of the sensitive unit, including the period size, the structural size and the dielectric constant of the substrate, and the adjustable range can cover the range from radio frequency to visible light (the wavelength range can comprise 300nm-3 m);
3) The invention has no strict requirement on the composition materials, so that the lower processing difficulty and the lower manufacturing cost can be realized by selecting the materials which are easier to process.
Drawings
FIG. 1 is a schematic diagram of a sensitive unit of a photoelectric detection method based on an asymmetric metamaterial structure in embodiment 1; wherein 1 is a conversion structure, 2 is an asymmetric electromagnetic resonance structure, and 3 is a substrate;
like reference numerals in the drawings denote like parts.
Fig. 2 is a frequency domain response of the sensing unit in the terahertz frequency band in embodiment 1.
Fig. 3 is a current distribution on the sensing unit in embodiment 1.
Fig. 4 is a lorentz force frequency signal of the center of the conversion structure in the sensing unit in example 1.
Fig. 5 shows the voltage signal intensity detected on the sensor unit in example 1.
FIG. 6 is a schematic diagram of an array photodetector formed using the sensing cells of FIG. 1, connected in series to increase the voltage strength of the output.
Detailed Description
The invention will be further illustrated with reference to the following specific examples, but the invention is not limited to the following examples. The methods are conventional methods unless otherwise specified. The starting materials are available from published commercial sources unless otherwise specified.
Example 1,
The embodiment provides an asymmetric metamaterial structure photoelectric detector working in a terahertz wave band (the frequency is 0.63 THz), a single metamaterial sensitive unit structure of the detector is shown in fig. 1, the metamaterial structure can be prepared by adopting ultraviolet lithography or laser direct writing technology, and the metamaterial sensitive unit consists of the following parts:
part 1 in FIG. 1 is a conversion structure, and a specific material is n-type doped GaAs, and the dimension is 20 μm×35 μm, and the thickness is 400nm;
the part 2 in the figure 1 is an asymmetric electromagnetic resonance structure, the A-A axis in the figure is asymmetric, the specific material is gold, the width is 6 mu m, the outer side length is 50 mu m, the width of two notches is 6 mu m, and the thickness of a gold layer is 400nm;
the part 3 in FIG. 1 is a substrate with low loss in terahertz wave band, and the specific material is high-purity GaAs (corrosion defect density is 1500-5000cm 2 ) Thickness is 10 μm; the sensitive unit can be periodically expanded in the x and y directions with the period of 60 mu m.
Fig. 2 is an overall frequency response curve of a periodic structure, an incident wave is normally incident by using a plane wave, the resonant frequency is designed to be 0.63THz, and the calculation result is consistent with the design.
Fig. 3 is a current distribution of the metamaterial sensitive unit in embodiment 1 at resonance, and it can be seen that a ring-shaped current is generated on the asymmetric electromagnetic resonance structure, and electrons in the conversion structure are driven to move by local electric field force.
Fig. 4 shows the lorentz force calculated from the center point of the conversion structure, and the electric field intensity of the incident terahertz wave is 10 7 V/m, frequency 0.63THz, a significant DC driving force component was seen.
Fig. 5 shows the voltage values detected by a single metamaterial sensitive unit in embodiment 1, the detection mode is shown in fig. 6, and only the voltage value in one sensitive unit is obtained. In the present embodiment, the electric field intensity of the incident terahertz wave is 10 7 V/m, a voltage of 3.2mV can be obtained, and a fundamental frequency voltage obtained due to the electric field force action of an incident electric field can be detected.
Fig. 6 is a schematic diagram of a connection mode of voltage series connection of a 3×3 periodic structure, the number of the metamaterial sensitive units is not limited to 3×3, and the larger the number of the units, the larger the obtained voltage value. The cascade mode of the periodic structure is not limited to simple series connection or parallel connection, and can be mixed in series and parallel connection, and the specific mode is determined according to requirements.
In the invention, the response wavelength of the target electromagnetic wave can be adjusted by changing the parameters of the metamaterial sensitive unit, including the period size, the structure size, the dielectric constant of the substrate and the like (for example, the period is enlarged, the structure size is enlarged, the response wavelength is moved to a long wavelength, the period is reduced, the structure size is reduced, the response wavelength is moved to a short wavelength, and the adjustable range can cover the range from radio frequency to visible light (the wavelength range is 300nm-3 m).
Claims (8)
1. A photoelectric detector based on an asymmetric metamaterial structure comprises at least one metamaterial sensitive unit;
the metamaterial sensitive unit consists of an asymmetric electromagnetic resonance structure and a conversion structure, the conversion structure is arranged in an area surrounded by the asymmetric electromagnetic resonance structure, and the whole structure is arranged on the substrate;
the asymmetric electromagnetic resonance structure has asymmetry under single or multiple symmetry standards and has a sub-wavelength dimension;
the shape of the asymmetric electromagnetic resonance structure is a geometric continuous structure or a polymer structure composed of a plurality of discrete structures;
the asymmetric electromagnetic resonance structure consists of a U-shaped groove and a flat plate, a resonance cavity is formed in the area surrounded by the U-shaped groove and the flat plate, and the conversion structure is arranged in the resonance cavity;
the conversion structure is required to be positioned in a magnetic field enhancement area generated by the asymmetric resonance structure so as to generate Lorentz force.
2. The photodetector of claim 1, wherein: the component materials of the asymmetric electromagnetic resonance structure are required to meet the requirements of electromagnetic resonance on the materials; the asymmetric electromagnetic resonance structure is made of any one of the following materials: good conductor metal, heavily doped or undoped semiconductor and dielectric material.
3. The photodetector of claim 1, wherein: the switching structure is a single structure separated from each other or a continuous structure; the conversion structure is a structure with an independent geometry or a block of doped regions on the substrate.
4. The photodetector of claim 1, wherein: the switching structure is composed of a material having free carriers.
5. The photodetector of claim 4, wherein: the material with free carriers is selected from any one of the following materials: metal materials, n-type or p-type doped semiconductor materials, semi-metal materials, and two-dimensional materials.
6. The photodetector of claim 1, wherein: the substrate is made of a material with low loss to incident electromagnetic waves, and comprises Teflon, FR-4, high-purity Si, high-purity GaAs, glass and quartz.
7. The photodetector of any one of claims 1 to 6, wherein: the photoelectric detector based on the asymmetric metamaterial structure consists of a single metamaterial sensitive unit;
or the photoelectric detector based on the asymmetric metamaterial structure is formed by a plurality of metamaterial sensitive units in an array mode.
8. The photodetector of claim 7, wherein: the metamaterial sensitive units are arranged in a periodic array; the cascade mode of the periodic array arrangement comprises series connection, parallel connection or series-parallel connection mixing.
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| CN104241401A (en) * | 2014-09-09 | 2014-12-24 | 华中科技大学 | Schottky type terahertz multi-spectrum signal detector based on metamaterial and manufacturing method thereof |
| CN104538721A (en) * | 2014-12-31 | 2015-04-22 | 清华大学 | Metamaterial harmonic oscillator based on metal-structure LC resonator and application thereof |
| CN105891609A (en) * | 2014-12-25 | 2016-08-24 | 北京大学 | Thermal mechanical type electromagnetic radiation detector |
| CN111029416A (en) * | 2019-10-30 | 2020-04-17 | 北京大学 | Circularly polarized light detector and preparation method thereof |
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| CN110061068A (en) * | 2014-06-20 | 2019-07-26 | 帕特里克·K·布拉迪 | The system for converting electromagnetic radiation into electric energy using Meta Materials |
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| CN104241401A (en) * | 2014-09-09 | 2014-12-24 | 华中科技大学 | Schottky type terahertz multi-spectrum signal detector based on metamaterial and manufacturing method thereof |
| CN105891609A (en) * | 2014-12-25 | 2016-08-24 | 北京大学 | Thermal mechanical type electromagnetic radiation detector |
| CN104538721A (en) * | 2014-12-31 | 2015-04-22 | 清华大学 | Metamaterial harmonic oscillator based on metal-structure LC resonator and application thereof |
| CN111029416A (en) * | 2019-10-30 | 2020-04-17 | 北京大学 | Circularly polarized light detector and preparation method thereof |
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