CN114512556A - Photoelectric detector based on asymmetric metamaterial structure - Google Patents
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention discloses a photoelectric detector based on an asymmetric metamaterial structure. The photoelectric detector based on the asymmetric metamaterial structure can be composed of a metamaterial sensitive unit or a plurality of metamaterial sensitive units in an array form. The metamaterial sensitive unit consists of an asymmetric electromagnetic resonance structure and a conversion structure. When the conversion structure works, electromagnetic waves are coupled with the asymmetric electromagnetic resonance structure to generate a local strong magnetic field, free carriers of the conversion structure are deflected under the action of Lorentz force generated by the conversion structure and have directional movement components, and direct current potential difference is accumulated on the physical boundary of the conversion structure to form direct current potential difference, so that conversion of high-frequency electromagnetic wave (light) signals to direct current is realized. The photoelectric detector provided by the invention has the outstanding advantages of simple structure, high detection speed, large response waveband range, low processing difficulty, low manufacturing cost and the like.
Description
Technical Field
The invention belongs to the field of novel photoelectric technology, and particularly relates to a photoelectric detector based on an asymmetric structure.
Background
Optical signals are one of important signals that we can directly accept in daily life, and photoelectric conversion is one of important ways to effectively utilize optical signals. At present, photoelectric conversion and detection are mainly performed based on semiconductor photoelectric effect and PN robustness, and due to the limitation of a physical mechanism of a material, the conventional photoelectric detection means has obvious limitations in response speed, detection wave band and the like, so that the realization of a rapid and broadband response photoelectric detection technology becomes an important research direction. On the other hand, in recent years, a new artificially-constructed material, i.e., a metamaterial, has been rapidly developed and has a specific advantage in the control of electromagnetic waves. By utilizing the design idea of the metamaterial, a novel photoelectric detection method is obtained, and the defects of the traditional method in the aspects of response speed and applicable wave band are overcome.
Disclosure of Invention
The invention aims to provide a photoelectric detector based on an asymmetric metamaterial structure.
The invention provides a photoelectric detector based on an asymmetric metamaterial structure, which comprises at least one metamaterial sensitive unit.
The photoelectric detector based on the asymmetric metamaterial structure can be composed of only a single metamaterial sensitive unit, and can also be composed of a plurality of metamaterial sensitive units in an array form. The detector array formed by a plurality of metamaterial sensitive units can improve the photoelectric detection performance and widen the application range, such as a series of functions related to photoelectric conversion, such as imaging, photoelectric calculation and the like.
The metamaterial sensitive unit is composed of an asymmetric electromagnetic resonance structure and a conversion structure, the conversion structure is arranged in a region surrounded by the asymmetric electromagnetic resonance structure, and the whole structure is arranged on a low-loss substrate. When electromagnetic waves irradiate the metamaterial sensitive unit, resonance current or electric field is formed on the asymmetric electromagnetic resonance structure, so that a local magnetic field is generated, and the intensity of the local magnetic field is obviously enhanced compared with the intensity of the magnetic field of incident electromagnetic waves. The conversion structure in the metamaterial sensitive unit is arranged in a local strong magnetic field, and free carrier motion of the conversion structure can be deflected under the combined action of the electric field and the magnetic field due to Lorentz force generated. The Lorentz force has components along the same direction in the oscillation period of the electromagnetic wave, so that the free carrier motion in the conversion structure also contains directional movement components, so that a negative potential is accumulated at one end of the physical boundary of the conversion structure, and a positive potential is induced at the other end to form a direct current potential difference. By arranging electrodes at two ends of the physical boundary of the conversion structure, direct current or voltage signal output can be obtained, so that conversion of high-frequency electromagnetic wave (light) signals into direct current is realized.
The asymmetric electromagnetic resonance structure has asymmetry under single or multiple symmetric standards and has sub-wavelength size, and the asymmetric structure mainly aims at realizing coupling resonance with electromagnetic waves to be detected and generating high electric field and magnetic field enhancement. The shape of the asymmetric electromagnetic resonance structure can be geometrically continuous or a polymer structure consisting of a plurality of discrete structures. Specifically, as shown in fig. 1, the asymmetric electromagnetic resonance structure may be formed by a U-shaped groove and a flat plate, an area surrounded by the U-shaped groove and the flat plate forms a resonant cavity, and the conversion structure is disposed in the resonant cavity.
The component materials of the asymmetric electromagnetic resonance structure need to meet the basic requirements of electromagnetic resonance on the materials, can be good conductor metals such as gold, silver, copper and the like, and can also be heavily doped or undoped semiconductors such as silicon, germanium, gallium arsenide and the like, and the doped elements in the heavily doped or undoped semiconductors comprise boron, phosphorus, arsenic and the like; or may be TiO2、BaTiO3And the like.
The conversion structure is a structure which actually generates photoelectric conversion, and is required to be positioned in a magnetic field enhancement area generated by the asymmetric resonance structure so as to generate Lorentz force. The switching structure may be a single structure separated from each other or a continuous structure; either a structure with independent geometry or a doped region on the substrate. The above-mentionedThe conversion structure is made of materials with free carriers, can be n-type or p-type doped semiconductor materials such as Si, GaAs and the like, and can also be Bi and Cd3As2The semi-metal material can be graphene or MoS2Etc. of two-dimensional material.
The substrate should be made of a material with low loss on incident electromagnetic waves, such as teflon, FR-4 and the like in a microwave band, high-purity Si, high-purity GaAs and the like in a terahertz band, glass, quartz and the like in a visible light band, and the specific selection depends on an operating band.
The metamaterial sensitive units can be arranged in a periodic array mode, and the accumulation and the enhancement of the total conversion voltage can be realized by connecting the units in series; by connecting the cells in parallel, cumulative enhancement of the total switching current can be achieved. The cascade mode of the periodic structure is not limited to simple series or parallel connection, and can also be a series-parallel connection mixture, and the specific mode depends on the requirement.
The invention has the beneficial effects that:
1) the photoelectric conversion process of the invention is completely realized by artificial structure coupling, and a PN junction structure required by the traditional photoelectric detection device is not needed, so various parasitic effects are avoided, and the photoelectric conversion device can have the highest femtosecond ultrafast photoelectric detection speed according to the working wavelength;
2) in the invention, the response wavelength of the target electromagnetic wave can be adjusted by changing the parameters of the sensitive unit, including the period size, the structure size and the substrate dielectric constant, and the adjustable range can cover the radio frequency to visible light wave band (the wavelength range can include 300nm-3 m);
3) the invention has no strict requirement on the composition materials, so that the lower processing difficulty and the lower manufacturing cost can be realized by selecting the materials which are easier to process.
Drawings
FIG. 1 is a schematic diagram of a sensing unit of a photodetection method based on an asymmetric metamaterial structure in embodiment 1; wherein, 1 is a conversion structure, 2 is an asymmetric electromagnetic resonance structure, and 3 is a substrate;
like reference symbols in the various drawings indicate like elements.
Fig. 2 is a frequency domain response of the sensing unit in embodiment 1 in the terahertz frequency band.
Fig. 3 is a current distribution on the sensing unit in example 1.
Fig. 4 shows the lorentz force frequency signal at the center of the conversion structure in the sensing unit of example 1.
Fig. 5 shows the detected voltage signal strength on the sensing unit in example 1.
Fig. 6 is a schematic diagram of an array photodetector formed by using the sensing units shown in fig. 1, wherein the array photodetector is connected in series to increase the output voltage.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples, but the present invention is not limited to the following examples. The method is a conventional method unless otherwise specified. The starting materials are commercially available from the open literature unless otherwise specified.
Examples 1,
The embodiment provides an asymmetric metamaterial structure photodetector working in a terahertz waveband (with a frequency of 0.63THz), a single metamaterial sensitive unit structure of the photodetector is shown in fig. 1, an ultraviolet lithography or laser direct writing technology can be adopted to prepare a metamaterial structure, and the metamaterial sensitive unit is composed of the following parts:
part 1 in fig. 1 is a conversion structure, and the specific material is n-type doped GaAs, the size is 20 μm × 35 μm, and the thickness is 400 nm;
Fig. 2 is an overall frequency response curve of a periodic structure, an incident wave adopts a plane wave normal incidence, a resonant frequency is designed to be 0.63THz, and a calculation result is consistent with the design.
Fig. 3 is a current distribution of the metamaterial sensitive unit in example 1 at resonance, and it can be seen that a circular current is generated on the asymmetric electromagnetic resonance structure, and electrons in the conversion structure move under the drive of a local electric field force.
FIG. 4 shows the calculated Lorentz force at the center point of the conversion structure, with an incident terahertz wave electric field intensity of 107V/m, at a frequency of 0.63THz, a significant DC driving force component is seen.
Fig. 5 shows the voltage values detected by a single metamaterial sensitive unit in example 1, and the detection is as shown in fig. 6, except that the voltage values in one sensitive unit are obtained here. In the present embodiment, the incident terahertz wave electric field intensity is 107At V/m, 3.2mV of voltage can be obtained, and simultaneously, the fundamental frequency voltage obtained by the action of the electric field force of an incident electric field can be detected.
Fig. 6 is a schematic diagram of a designed connection mode of voltage series connection of a 3 × 3 periodic structure, the number of the metamaterial sensitive units is not limited to 3 × 3, and the larger the number of the units is, the larger the obtained voltage value is. The cascade mode of the periodic structure is not limited to simple series or parallel connection, and can also be a series-parallel connection mixture, and the specific mode depends on the requirement.
In the invention, the response wavelength of the target electromagnetic wave can be adjusted by changing the parameters of the metamaterial sensitive unit, such as the period size, the structure size, the substrate dielectric constant and the like (for example, the period is enlarged, the structure size is enlarged, the response wavelength is moved to a long wavelength, the period is reduced, the structure size is reduced, and the response wavelength is moved to a short wavelength), and the adjustable range can cover a radio frequency to visible light wave band (the wavelength range is 300nm-3 m).
Claims (10)
1. A photoelectric detector based on an asymmetric metamaterial structure comprises at least one metamaterial sensitive unit;
the metamaterial sensitive unit is composed of an asymmetric electromagnetic resonance structure and a conversion structure, the conversion structure is arranged in an area surrounded by the asymmetric electromagnetic resonance structure, and the whole structure is arranged on the substrate.
2. The photodetector of claim 1, wherein: the asymmetric electromagnetic resonance structure has asymmetry under single or multiple symmetry standards and has sub-wavelength dimensions.
3. The photodetector of claim 1 or 2, wherein: the shape of the asymmetric electromagnetic resonance structure is a geometrically continuous structure or a multimeric structure composed of a plurality of discrete structures.
4. The photodetector of any one of claims 1 to 3, wherein: the material of the asymmetric electromagnetic resonance structure needs to meet the requirement of electromagnetic resonance on the material; the composition material of the asymmetric electromagnetic resonance structure is selected from any one of the following materials: good conductor metals, heavily doped or undoped semiconductors, and dielectric materials.
5. The photodetector of any one of claims 1 to 4, wherein: the switching structures are individual structures separated from each other or continuous structures; the conversion structure is a structure with independent geometry or a doped region on the substrate.
6. The photodetector of any one of claims 1 to 5, wherein: the conversion structure is composed of a material having free carriers.
7. The photodetector of claim 6, wherein: the material with free carriers is selected from any one of the following: metallic materials, n-type or p-type doped semiconductor materials, semi-metallic materials, and two-dimensional materials.
8. The photodetector of any one of claims 1 to 7, wherein: the substrate is made of materials with low loss on incident electromagnetic waves, and the materials comprise Teflon, FR-4, high-purity Si, high-purity GaAs, glass and quartz.
9. The photodetector of any one of claims 1 to 8, wherein: the photoelectric detector based on the asymmetric metamaterial structure consists of a single metamaterial sensitive unit;
or the photoelectric detector based on the asymmetric metamaterial structure is composed of a plurality of metamaterial sensitive units in an array form.
10. The photodetector of claim 9, wherein: the plurality of metamaterial sensitive units are arranged in a periodic array; the cascade mode of the periodic array arrangement comprises series connection, parallel connection or series-parallel connection mixture.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115598647A (en) * | 2022-12-13 | 2023-01-13 | 三微电子科技（苏州）有限公司（Cn） | Film piezoelectric sound pressure sensor and detection imaging device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115598647A (en) * | 2022-12-13 | 2023-01-13 | 三微电子科技（苏州）有限公司（Cn） | Film piezoelectric sound pressure sensor and detection imaging device |
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