CN208157437U - A kind of microcavity array coupled structure for quantum well detector - Google Patents
A kind of microcavity array coupled structure for quantum well detector Download PDFInfo
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- CN208157437U CN208157437U CN201820606657.6U CN201820606657U CN208157437U CN 208157437 U CN208157437 U CN 208157437U CN 201820606657 U CN201820606657 U CN 201820606657U CN 208157437 U CN208157437 U CN 208157437U
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Abstract
The utility model relates to a kind of microcavity array coupled structures for quantum well detector comprising：Multiple substrates being located at below the microcavity unit in the microcavity unit of array distribution and one, wherein each microcavity unit includes：Metal electrode and one epitaxial layer in the quantum well detector on the lower surface of the upper metal electrode is set on one, the geometric dimension of the epitaxial layer is identical as the geometric dimension of the upper metal electrode；All microcavity units further include：The one shared lower metal electrode board being arranged on for the epitaxial layer, the lower metal electrode board are arranged on the upper surface of the substrate.The normal incidence coupling of light not only may be implemented in the utility model, Quantum Well is effectively improved to the absorption efficiency of light, the dark current of quantum well detector is reduced, improves its operating temperature, and can achieve the effect of microcavity internal electric field enhancing, improve the coupling efficiency of quantum well detector.
Description
Technical field
The utility model relates to a kind of photonic semiconductor detector more particularly to a kind of microcavitys for quantum well detector
Array coupled structure.
Background technique
Terahertz (Terahertz, THz) wave typically refers to frequency from 100GHz to 10THz, and respective wavelength is in 3mm to 30 μ
Electromagnetic wave within the scope of m, between millimeter wave and infrared light.THz wave occupies special position in electromagnetic spectrum, in electricity
Son is to the transitional region of photonics, and long wave end coincides with submillimeter wave, and shortwave end coincides with far infrared band,
THz wave technology all has very in technical field of information communication, biomedicine, space exploration and global environmental testing
It is widely applied potentiality.However, research and application development to THz wave band are also due to lacking effective radiation source and detector
Stage in initial stage starting.Therefore, the key of THz technical application development is to make economic, efficient radiation source and detection
Device.
THz detector is the core component of Terahertz Technology application.According to the principle of detection can be divided into thermal detector and
Photon type detector two major classes.Common THz thermal detector mainly includes：Golay cell, pyroelectricity detector, silicon
Bolometer detector etc..Common THz photon detector mainly includes：Adulterate the Semiconductors At Low Temperatures detection of HIGH-PURITY SILICON, germanium
Device, Schottky diode and high mobility transistor plasma wave THz room temperature detector, the Terahertz based on intersubband transitions
Quantum well detector (THz Quantum-Well Photodetectors, THz QWPs) and Terahertz quantum point detector
(THz Quantum-Dot Photodetectors,THz QDPs).Compared with thermal detector, THz photon detector usually has
Standby very high detectivity and capability of fast response, photon detector is better than thermal detector in many applications.And and its
His THz photon detector is compared, and THz QWPs has and photon action section is big, detectivity is high, damage threshold is big, loud
Answer speed is fast, linear response range is wide, response frequency range can required design, Material growth and device preparation technology are mature, can prepare
The advantages that extensive imaging array.
THz QWPs is natural expansion of the infrared detector (QWIPs) in THz frequency range, thus its response physical mechanism with
The QWIPs of infrared band is identical.As shown in Figure 1, infrared in commonly used in the prior art and THz QWPs structure includes：GaAs
Substrate 1 ', the lower contact layer 2 ' for being successively set on 1 ' upper surface of GaAs substrate from the bottom to top, active area 3 ' and upper contact layer 4 ' are set
It sets in 1 ' upper surface of GaAs substrate and is located at the lower electrode 5 ' of lower 2 ' two sides of contact layer and be arranged in upper 4 ' upper surface of contact layer
Top electrode 6 ', wherein active area 3 ' is by GaAs/AlxGa1-xAs multiple quantum wells periodic structure is constituted, the beam in Quantum Well
Continuous state is transitted to after tiing up Electron absorption THz photon, forms photoelectric current under applying bias, by measuring and analyzing photoelectric current
Variation is to complete the detection to THz wave.
It can be seen that lower Intersubband absorption efficiency is to restrict the key factor of THz QWPs performance.Optical coupling mode
Improvement be obtain the more preferable performance of THz QWPs key factor.Since the light absorption of QWPs is derived from intersubband transitions, intersubband
Transition speed determines THz QWPs to the light of normal incidence without response.In recent years, people introduced new optical coupling mechanism
Into QWPs device, these new coupled modes can not only change the polarization direction of light as grating, also can change detection
The state density of device active area light, allows us to design and produce out more efficient sensitive detection parts.
Currently, the common two kinds of coupled modes of THz QWPs are：45 ° of polishing inclined plane substrate couplings and metal scattered grating coupling
Close, wherein 45 ° of polishing inclined plane substrate coupling mechanisms can not achieve light normal incidence (as shown in Figure 1, GaAs substrate 1 ' need into
45 ° of polishing inclined planes of row, incident light are needed from 45 ° of inclined-plane incidences), it is integrated to be also unfavorable for device, although grating coupling can be real
The now normal incidence coupling of light, but there is no too big promotion on device performance.
In conclusion studying efficient optical coupling structure for performances such as the response rate of raising THz QWPs and operating temperatures
It has very important significance.
Utility model content
In order to solve the above-mentioned problems of the prior art, the utility model is intended to provide a kind of for quantum well detector
Microcavity array coupled structure, to realize the normal incidence coupling of light, improve quantum well detector to the absorption efficiency of incident light and
Response rate.
A kind of microcavity array coupled structure for quantum well detector described in the utility model comprising：It is multiple to be in
The microcavity unit of array distribution and a substrate below the microcavity unit, wherein
Each microcavity unit includes：On one metal electrode and one the upper metal electrode is set lower surface
On the quantum well detector in epitaxial layer, the geometric dimension phase of the geometric dimension of the epitaxial layer and the upper metal electrode
Together；
All microcavity units further include：The one shared lower metal electrode board being arranged on for the epitaxial layer,
The lower metal electrode board is arranged on the upper surface of the substrate；
Multiple microcavity units of each column are sequentially connected in series by microcavity connecting line；
Wherein, the upper metal electrode is sub-wavelength paster antenna.
In the above-mentioned microcavity array coupled structure for quantum well detector, the upper metal electrode and lower metal electricity
Pole plate is all made of the Ti and Au of no-alloyed or is made of Pd, Ge, Ti and the Au continuously growing；The substrate uses N+ type
GaAs is made.
In the above-mentioned microcavity array coupled structure for quantum well detector, the microcavity connecting line includes：It is described
Lower metal electrode board, and from the lower metal electrode board epitaxial layer sequentially connected from the bottom to top and upper metal electrode.
In the above-mentioned microcavity array coupled structure for quantum well detector, multiple microcavity units of first row
An electric connection board is connected to simultaneously by the microcavity connecting line respectively, multiple microcavity units of last row lead to respectively
It crosses the microcavity connecting line while being connected to another electric connection board, two electric connection boards pass through connecting terminal company respectively
It is connected to external circuit.
In the above-mentioned microcavity array coupled structure for quantum well detector, the electric connection board and connecting terminal are equal
Including：The lower metal electrode board, and from the lower metal electrode board epitaxial layer sequentially connected from the bottom to top and upper gold
Belong to electrode.
Due to using above-mentioned technical solution, the utility model is by using sub-wavelength paster antenna as each
The upper surface metal of microcavity unit, the lower surface metal using lower metal electrode board as all microcavity units shareds, thus shape
At the microcavity cell array of double-sided metal, so as to the quantum well detector extension effectively coupled light into microcavity unit
The normal incidence coupling of light thus not only may be implemented in layer (i.e. the upper contact layer of quantum well detector, active area and lower contact layer),
Quantum Well is effectively improved to the absorption efficiency of light, reduces the dark current of quantum well detector, improves its operating temperature, and can be with
Achieve the effect that microcavity internal electric field enhances, improves the coupling efficiency of quantum well detector, and to realize the extensive of THz wave band
Focal plane array image-forming and the integrated of THz detection system lay the foundation.
Detailed description of the invention
Fig. 1 is infrared in commonly used in the prior art and THz QWPs structural schematic diagram；
Fig. 2 is a kind of stereoscopic schematic diagram of microcavity array coupled structure for quantum well detector of the utility model；
Fig. 3 is the upper surface scale diagrams of the microcavity unit and microcavity connecting line in Fig. 2；
Fig. 4 is the partial structurtes sectional view in Fig. 2 at A；
Fig. 5 is the schematic diagram of step S1 in the production method of the utility model；
Fig. 6 a, 6b are the schematic diagrames of step S2 in the production method of the utility model；
Fig. 7 is the schematic diagram of step S3 in the production method of the utility model；
Fig. 8 is the schematic diagram of step S4 in the production method of the utility model；
Fig. 9 is the schematic diagram of step S5 in the production method of the utility model；
Figure 10 is the schematic diagram of step S7 in the production method of the utility model.
Specific embodiment
With reference to the accompanying drawing, the preferred embodiment of the utility model is provided, and is described in detail.
As in Figure 2-4, the utility model, i.e., a kind of microcavity array coupled structure for quantum well detector, including：
Multiple microcavity units 1 in array distribution and the substrate 7 below microcavity unit 1, wherein
Each microcavity unit 1 includes：Upper metal electrode 2 and one quantum on the lower surface of upper metal electrode 2 is set
The epitaxial layer 3 (geometric dimension of epitaxial layer 3 is identical as the geometric dimension of upper metal electrode 2) of well detector, all microcavity units 1
It further include a shared lower metal electrode board 4 being arranged on for the epitaxial layer 3 of quantum well detector, the lower metal electrode board
4 are arranged on the upper surface of substrate 7；
Multiple microcavity units 1 of each column are sequentially connected in series by microcavity connecting line 5；
Multiple microcavity units 1 of first row are connected to an electric connection board 6 simultaneously by a microcavity connecting line 5 respectively,
Multiple microcavity units 1 of last row pass through a microcavity connecting line 5 respectively while being connected to another electric connection board 6, and two
Electric connection board 6 is connected to external circuit by a connecting terminal 8 respectively；
Wherein, the upper metal electrode 2 in microcavity unit 1 is sub-wavelength paster antenna (since microcavity unit 1 is in array point
Cloth, therefore constitute sub-wavelength patch antenna array), the epitaxial layer 3 of quantum well detector includes sequentially connected from top to bottom
Upper contact layer 31, active area 32 (the semiconductor superlattice structure including GaAs and AlGaAs alternating growth) and lower contact layer 33.
Above-mentioned microcavity connecting line 5, electric connection board 6 and connecting terminal 8 all has to be tied with 1 identical layer of rank of microcavity unit
Structure, that is, from lower metal electrode board 4 sequentially connected epitaxial layer 3 and upper metal electrode 2 from the bottom to top.
The above-mentioned microcavity unit 1 in array distribution array laterally and longitudinally on number can required design, this
In embodiment, in order to be compared with shown in Fig. 1 using the quantum well detector of conventional 45 ° of polishing inclined plane substrate coupled structures,
The number of microcavity unit 1 can be equal to Fig. 1 in quantum well detector photosensitive area divided by microcavity unit 1 upper surface face
Product；Specifically, as shown in figure 3, the geometric parameter of the upper surface (i.e. paster antenna) of microcavity unit 1 includes：Paster antenna
Lateral dimension s and longitudinal size w；The geometric parameter of microcavity connecting line 5 between microcavity unit 1 includes：Connect line length dw and
Connect line width stri；After the intrinsic look-in frequency of quantum well detector material has been determined, above-mentioned geometric parameter can be designed,
So that microcavity unit 1 supports the mode of electromagnetic wave equal with the intrinsic look-in frequency of quantum well detector material.
In addition, in the present embodiment, upper metal electrode 2 and lower metal electrode board 4 can using no-alloyed Ti and
Au is made of Pd, Ge, Ti and the Au continuously growing, and the latter is selected to would be even more beneficial to metal electrode 2 and lower metal electricity
The GaAs material that the upper and lower contact layer 31,33 of pole plate 4 and epitaxial layer 3 adulterates forms good Ohmic contact.
Below with reference to Fig. 5-10, the production method of the utility model is described in detail：
Step S1, as shown in figure 5, providing the sample material layer 101 made of Semi-insulating GaAs, and in the sample material layer
101 upper surface successively grows GaAs buffer layer (not shown), etching barrier layer 102 (AlGaAs material) and amount from the bottom to top
The epitaxial layer 3 of sub- well detector, wherein epitaxial layer 3 includes contact layer, active area under sequentially connected n-type doping from the bottom to top
32 and n-type doping on contact layer；
Step S2 provides the substrate material layer 201 made of N+ type GaAs, as in coupled structure as shown in Fig. 6 a, 6b
Substrate 7, and the plane geometry size of the substrate material layer 201 is greater than the plane geometry size of sample material layer 101, and in step
The upper surface of epitaxial layer 3 and substrate material layer 201 in rapid S1 is respectively formed the by electron beam evaporation (or magnetron sputtering)
One metal material layer 103 and the second metal material layer 202；
Step S3, as shown in fig. 7, at 320 DEG C of temperature and the pressure of 8MPa, to 103 He of the first metal material layer
Second metal material layer 202 carries out no less than 20 minutes golden gold bondings, to form third metal material layer 203 (such as institute in Fig. 8
Show), as the lower metal electrode board 4 in coupled structure；
Step S4, as shown in figure 8, with polisher lapper by sample material layer 101 cut it is thin after, will be remained with wet etching solution
Remaining 102 erosion removal of sample material layer 101 and etching barrier layer is connect under the n-type doping in step S1 epitaxial layers 3 with exposing
Contact layer, as the upper contact layer 31 of epitaxial layer 3, at this point, in n-type doping in step S1 epitaxial layers 3 contact layer then with third
Metal material layer 203 connects, the lower contact layer 33 as epitaxial layer 3；
Step S5, as shown in figure 9, the upper surface of epitaxial layer 3 in step s 4 is by electron beam evaporation, (or magnetic control splashes
Penetrate) the 4th metal layer 204 is formed, as the upper metal electrode 2 in coupled structure；
Step S6 in the upper surface photoetching patch antenna array figure of the 4th metal layer 204, and does exposure mask with photoresist,
Etching forms microcavity unit 1, microcavity connecting line 5, electric connection board 6 and connecting terminal 8 in coupled structure；
Step S7, as shown in Figure 10, by substrate material layer 201 cut it is thin after on its lower surface (i.e. the back side) growth regulation hardware
Belong to layer 205, so that coupled structure can be more securely affixed together with heat sink, and keeps its thermal diffusivity more preferable；
Step S8, not less than 350 DEG C at a temperature of carry out no less than 30 seconds high temperature rapid thermal annealings so that coupled structure
In upper metal electrode 2 and lower metal electrode board 4 form good Ohmic contact, the dark electricity of the sub- well detector of effective inhibitory amount
Stream；
Step S9, cleavage device, spun gold welding, encapsulation, so far completes the production of coupled structure.
In above-mentioned manufacturing process, the first metal material layer 103, the second metal material layer 202 and the 4th metal layer 204 are
It can be made using the Ti and Au of no-alloyed or using Pd, Ge, Ti and the Au continuously grown, the latter is selected to would be even more beneficial to
The GaAs material that the upper and lower contact layer 31,33 of metal material layer and epitaxial layer 3 adulterates forms good Ohmic contact.
In conclusion the utility model has the following advantages that：
1, the utility model can effectively increase effective absorption of quantum well detector photosurface using sub-wavelength paster antenna
Area improves quantum well detector to the absorption efficiency of incident light；
2, the utility model can make microcavity interior plasma bulk wave and THz light field using the microcavity unit of double-sided metal structure
It realizes resonant check, improves the response rate of quantum well detector；
3, the utility model has the effect of similar grating using the array structure that multiple microcavity units are constituted, and can be changed just
The direction of incident THz light, complies with transition speed, to be absorbed by the active area of quantum well detector.
4, the design freedom of the utility model is high, and designer can be according to the intrinsic look-in frequency of quantum well detector to micro-
The geometric dimension of chamber unit upper surface is designed, and microcavity unit is made to support the electromagnetic wave of specific oscillation frequency, to reach
The resonant check of ion bulk wave and incident field.
5, the microcavity array coupled structure with sub-wavelength paster antenna of the utility model is applicable not only to THz wave band,
It is applied equally to the quantum well detector of infrared band, therefore, in infrared and THz wave band extensive focal plane array image-forming
It is with a wide range of applications in field.
Above-described, the only preferred embodiment of the utility model is not intended to limit the scope of the utility model, this
Above-described embodiment of utility model can also make a variety of changes.It all claims according to the present utility model application and says
Simple, equivalent changes and modifications, fall within the claims of the utility model patent made by bright book content.This reality
What it is with novel not detailed description is routine techniques content.
Claims (5)
1. a kind of microcavity array coupled structure for quantum well detector, which is characterized in that the coupled structure includes：It is multiple
The substrate being located at below the microcavity unit in the microcavity unit of array distribution and one, wherein
Each microcavity unit includes：Metal electrode and one it is arranged on the lower surface of the upper metal electrode on one
Epitaxial layer in the quantum well detector, the geometric dimension of the epitaxial layer are identical as the geometric dimension of the upper metal electrode；
All microcavity units further include：The one shared lower metal electrode board being arranged on for the epitaxial layer, under this
Metal electrode board is arranged on the upper surface of the substrate；
Multiple microcavity units of each column are sequentially connected in series by microcavity connecting line；
Wherein, the upper metal electrode is sub-wavelength paster antenna.
2. the microcavity array coupled structure according to claim 1 for quantum well detector, which is characterized in that on described
Metal electrode and lower metal electrode board are all made of the Ti and Au of no-alloyed or using Pd, Ge, Ti and Au systems continuously grown
At；The substrate is made of N+ type GaAs.
3. the microcavity array coupled structure according to claim 1 for quantum well detector, which is characterized in that described micro-
Chamber connecting line includes：The lower metal electrode board, and from the lower metal electrode board extension sequentially connected from the bottom to top
Layer and upper metal electrode.
4. the microcavity array coupled structure according to claim 1 for quantum well detector, which is characterized in that first row
Multiple microcavity units pass through the microcavity connecting line respectively while being connected to an electric connection board, last row it is multiple
The microcavity unit passes through the microcavity connecting line respectively while being connected to another electric connection board, two electric connection boards point
External circuit is not connected to by a connecting terminal.
5. the microcavity array coupled structure according to claim 4 for quantum well detector, which is characterized in that the electricity
Connecting plate and connecting terminal include：The lower metal electrode board, and be sequentially connected from the bottom to top from the lower metal electrode board
The epitaxial layer and upper metal electrode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428762A (en) * | 2018-04-26 | 2018-08-21 | 中国科学院上海微***与信息技术研究所 | A kind of microcavity array coupled structure and preparation method thereof for quantum well detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428762A (en) * | 2018-04-26 | 2018-08-21 | 中国科学院上海微***与信息技术研究所 | A kind of microcavity array coupled structure and preparation method thereof for quantum well detector |
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