CN114460826B - 用于制造硅钟表部件的方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000010453 quartz Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 21
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 19
- 230000008021 deposition Effects 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
根据本发明的方法包括以下步骤:a)提供衬底(1),该衬底(1)包括第一硅层(2)、第二硅层(3)以及在第一硅层(2)和第二硅层(3)之间的中间氧化硅层(4);b)蚀刻第一硅层(2)以在其中形成钟表部件;c)从衬底(1)释放至少由经蚀刻的第一硅层(2)的全部或部分形成的、并包括钟表部件的晶圆;d)对钟表部件进行热氧化然后脱氧;e)在钟表部件上通过热氧化或沉积形成氧化硅层;f)从晶圆(8)中分离钟表部件。
Description
本申请是申请号为2019800201567,申请日为2019年3月19日,发明名称为“用于制造硅钟表部件的方法”的申请的分案申请。
技术领域
本发明涉及一种用于制造由硅制成的诸如游丝、擒纵叉、轮、指针、摇杆、杠杆、弹簧或摆轮的钟表部件的方法。
背景技术
尤其在文献EP 0732635、EP 1422436、EP 2215531和EP 3181938中已经描述制造硅钟表部件的方法。
发明内容
本发明的目的是提出一种用于制造高质量硅钟表部件的方法。
为此,提供根据权利要求1或2所述的方法及其从属权利要求。
本发明进一步提出一种支撑构件,该支撑构件有助于实现该方法,并且更普遍地有助于实现晶圆的热处理。该支撑构件由权利要求18及其从属权利要求来限定。
附图说明
阅读以下参照附图的详细描述,本发明的其他特征和优点将显现,其中:
图1至图11示意性地示出根据本发明的特定实施例的方法的连续步骤;
图12和图13分别是根据本发明的特定实施例的方法中用于在硅晶圆的热氧化处理期间支撑硅晶圆的支撑构件的透视图和侧视图;
图14和图15示意性地示出根据本发明的特定实施例的方法的步骤,其中从复合衬底中释放经蚀刻的硅晶圆;
图16示出可以实施根据本发明的另一实施例的方法的复合衬底。
具体实施方式
根据本发明的特定实施例,制造尤其是用于腕表的硅钟表部件的方法包括图1至图11所示的连续步骤。
在第一步骤(图1),提供绝缘体上硅(SOI)型衬底1。衬底1包括上部硅层2、下部硅层3以及在上部硅层2和下部硅层3之间的中间氧化硅层4。硅是单晶质、多晶质或非晶质的。它可以掺杂也可以不掺杂。根据待生产的部件的厚度来选择上部硅层2的厚度。下部硅层3用于赋予衬底1足够的刚度,以有助于将在下文中描述的对衬底1的处理和操作的实施。
在第二步骤中(图2),在上部硅层2上沉积光刻胶层5,并且该层5通过光刻形成。更准确地说,光刻胶层5通过通常由玻璃或石英制成的掩模6而暴露于紫外线下,掩模6支承待转移的结构7,结构7通常由铬制成。然后显影并固化光刻胶层5(图3)。在这些操作结束时,光刻胶层5具有与结构7相同的形状,并且转而构成掩模,该形状对应于待制造的一批钟表部件的形状。
在随后的步骤(图4)中,通过深反应离子蚀刻(DRIE)经由光刻胶掩模5来蚀刻上部硅层2,以在该层2中形成钟表部件。蚀刻被中间氧化硅层4阻止,从而允许为钟表部件限定精确的厚度。可以根据部件来调整刻蚀参数,以获得例如粗糙度或侧面角(flank angle)方面的特定特性。形成在上部硅层2中的钟表部件优选地是相同的,但是可以可替代地分成几个组,每个组对应于一种部件类型。例如,钟表部件包括以下类型的部件中的至少一种:游丝、擒纵叉、轮,尤其是擒纵轮、指针、摇杆、杠杆、弹簧、摆轮或这些部件的一部分。根据本发明的方法特别适用于调节装置部件(regulating organ component),并且更普遍地适用于要求低质量和/或低惯性的钟表运动部件。
然后,通过化学蚀刻或等离子蚀刻去除光刻胶掩模5(图5)。
在随后的步骤(图6)中,由至少全部或部分的蚀刻的上部硅层2形成的晶圆8以稍后将描述的方式从衬底1释放。该晶圆8包括基本结构和通过蚀刻期间留下的材料桥来附接到基本结构的钟表部件。
然后将晶圆8放入氧化炉中以经受通常在600℃和1300℃之间的热处理,氧化钟表部件的整个外表面(图7)。随后覆盖晶圆8且特别是钟表部件的氧化硅(SiO2)层9是通过消耗来自晶圆8的硅而形成的,这使得硅和氧化硅之间的界面后退并削弱硅的表面缺陷。随后,通过湿法蚀刻、蒸汽蚀刻或干法蚀刻来去除氧化硅(图8),获得具有良好表面光洁度的钟表部件。特别地,由于DRIE蚀刻而产生的侧面粗糙度和表面晶体缺陷大大降低。
在本方法的这个阶段,可以测量钟表部件或钟表部件中的一部分的物理特性,特别是它们的尺寸。由于之前的氧化-脱氧步骤,这些物理特性被良好地限定,并且因此这些物理特性的测量因不受表面缺陷的干扰而可以是精确。对于游丝,可以确定它们的刚度。对于给定的游丝,当该游丝仍然附接到晶圆8上或从晶圆8上分离时,通过将游丝与预定惯性的摆轮连接,测量摆轮-游丝组件的频率并通过计算从该测量中推导出游丝的刚度,可以确定刚度。更具体地,可以实施专利申请EP 3181938中描述的方法,即确定游丝的刚度、计算待从游丝中去除的材料厚度以获得所期望的刚度、然后去除该材料厚度以获得所期望的刚度的游丝。为了去除该材料厚度,晶圆8及其钟表部件可以按照与上述参照图7和图8相同的方式进行热氧化(图9)然后脱氧(图10)。如有必要,可重复确定刚度、计算待去除的厚度以及通过氧化-脱氧来去除该厚度的操作,以提高游丝的尺寸精度。
在本方法的另一步骤中(图11),例如通过热氧化或通过化学或物理气相沉积(CVD、PVD)在晶圆8及其钟表部件上形成氧化硅(SiO2)层10。涂覆钟表部件的该氧化硅层10增加了钟表部件的机械强度。对于游丝来说,如专利EP 1422436和EP 2215531所描述的,氧化硅层10具有使其能够补偿硅芯的弹性模量随温度的变化、以及游丝拟配备至的摆轮的惯性矩随温度的变化的厚度,使得摆轮-游丝振荡器的频率对温度不敏感。
最后一步,将钟表部件与晶圆8的底部结构分离。
在氧化步骤期间(图7和图9,以及图11(如果适用)),如图12和图13所示,晶圆8优选地由支撑板11水平支撑,该支撑板可手动或由机器人操作。该支撑板11由与氧化处理兼容的材料制成,例如石英、硅或碳化硅。为了允许晶圆8的均匀氧化,晶圆8相对于支撑板11被垫片12垫起,垫片12在不包含任何部件(尤其是在部件之间)的区域支撑晶圆8。通过与晶圆8的***边缘配合的保持元件13来防止晶圆8水平移动。垫片12和保持元件13通常为圆柱形。它们相对于支撑板11固定,例如通过卡口式连接附接至支撑板11。垫片12和保持元件13例如由石英或碳化硅制成,并且可以由相同的材料或不同的材料制成。在优选实施例中,支撑板11由硅制成,垫片和保持元件12、13由石英制成。当图11中的步骤包括CVD或PVD沉积操作时,在该步骤期间也可使用这种支撑板11及其垫片12和保持元件13。
优选地,在图9的氧化处理期间,晶圆8以相对于图7的氧化处理反向的位置放置在支撑板11上。同样地,在图11的氧化或沉积处理期间,晶圆8以相对于图9的氧化处理反向的位置放置在支撑板11上。这防止或至少限制钟表部件在重力和热作用下的永久变形。
通过以化学蚀刻或等离子蚀刻去除整个下部硅层3及整个中间氧化硅层4,可以实施从衬底1(图6)释放晶圆8的步骤。可替代地,下部硅层3和中间氧化硅层4只能在部件或部件组的背面去除,由此晶圆8保留这些层3、4中的一部分。然而,这些操作既耗时又昂贵。在本发明中,优选地,晶圆8由上部硅层2的一部分形成,并且以下文描述且图14和图15所示的方式执行从衬底1上释放晶圆8。
如图5所示的经蚀刻的衬底1被固定在封闭腔室15中的加热元件14上(图14),其中上部硅层2朝下,而因此朝上的下部硅层3抵靠加热元件14。将衬底1固定在加热元件14上的方法可以是静电(通过施加电场)或机械方法。将氢氟酸(HF)溶液加入腔室15中,氢氟酸(HF)溶液与衬底1不接触。随后充满腔室15内部的氢氟酸的蒸汽蚀刻中间氧化硅层4,而不蚀刻硅。由温度调节的加热元件14防止氢氟酸和氧化硅之间的反应产生的水冷凝,水的冷凝会导致待释放的部件粘附到衬底1的其余部分。
由在蚀刻上部硅层2期间形成的凹槽预先限定待释放的部分,即晶圆8,该凹槽形成晶圆8的***边缘。在对上部硅层2进行该同一蚀刻期间,在包含部件的中心区域17周围的晶圆8中蚀刻例如以图15所示的阴影形式的开口16。这些开口16允许氢氟酸蒸汽通过。
图15示出晶圆8的示例,其形状由矩形或方形部分组成。当然,也可以考虑其他形状,例如圆形。在图15中可以看到由晶圆8承载的钟表部件18,在此,该钟表部件18由游丝组成。为了便于阅览附图,这些钟表部件以比它们的实际数量少的数量示出。
根据本发明的方法制造的钟表部件可以具有非常精确的尺寸和良好的表面光洁度,这将提高操作精度和将使用该钟表部件的机械装置的性能。
当然可以如上所述对根据本发明的方法进行修改。
例如,虽然用于分别提高钟表部件的表面光洁度和调整钟表部件的刚度(在有游丝的情况下)的两次氧化-脱氧步骤(图7、图8和图9、图10)是特别有利的,但在确定刚度之前,可以仅提供一次既能提高表面光洁度又能调整刚度的氧化-脱氧步骤。
可选地,可以从双重或三重SOI衬底开始,或者甚至更多,即包括两个以上的由中间氧化硅层分离的硅层的衬底,诸如图16所示的衬底20,并且在一组随后将从衬底释放的上部层中蚀刻钟表部件。然后,钟表部件将具有包括一个或多个中间氧化硅层的复合结构。
用于构造上部硅层2(图3)的光刻胶掩模5可以被氧化硅掩模代替。还可以将光刻胶掩模和氧化硅掩模相结合,以通过在上部硅层或一组上部层中进行蚀刻来制造多层钟表部件。
在其他变型中,衬底可以从其两侧蚀刻。
用于停止蚀刻的(多个)氧化硅层可由一个或多个聚对二甲苯型的层来加强。
最后,本发明不排除使用一个或多个金属层来阻止蚀刻。
Claims (4)
1.一种用于热处理硅晶圆(8)的方法,在所述晶圆(8)中蚀刻钟表部件,其中,所述晶圆(8)在氧化炉中被热氧化并且在氧化期间被支撑构件支撑,所述支撑构件包括支撑板(11)以及由所述支撑板(11)承载的垫片(12)和保持元件(13),其中所述垫片(12)通过在不包含任何部件的区域中支撑所述晶圆(8)而保持所述支撑板(11)和所述晶圆(8)之间的间隙,并且其中所述保持元件(13)防止所述晶圆(8)水平移动。
2.根据权利要求1所述的方法,其中所述支撑板(11)由硅、石英或碳化硅制成。
3.根据权利要求1或2所述的方法,其中所述垫片(12)和所述保持元件(13)由石英或碳化硅制成。
4.根据权利要求1或2所述的方法,其中所述垫片(12)和所述保持元件(13)通过卡口式连接固定到所述支撑板(11)。
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EP3907565A1 (fr) | 2020-05-07 | 2021-11-10 | Patek Philippe SA Genève | Procede de fabrication d'un composant horloger en silicium |
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