CN114256733A - 光模块 - Google Patents

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Publication number
CN114256733A
CN114256733A CN202111040177.0A CN202111040177A CN114256733A CN 114256733 A CN114256733 A CN 114256733A CN 202111040177 A CN202111040177 A CN 202111040177A CN 114256733 A CN114256733 A CN 114256733A
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China
Prior art keywords
dielectric substrate
electrode
region
lower electrode
bypass capacitor
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CN202111040177.0A
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CN114256733B (zh
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野口大辅
山本宽
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Cambridge Optoelectronics Co ltd
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Cambridge Optoelectronics Co ltd
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Abstract

本发明提供一种光模块，其目的在于抑制特性阻抗的下降。光模块具有：光半导体元件(10)，其具有半导体激光器(12)的阳极电极(16)、光调节器(14)的阳极电极(18)以及在半导体激光器及光调节器中共通的阴极电极(20)；旁通电容器(22)，其具有下电极(24)以及上电极(26)且并联连接于半导体激光器；电介质基板(28)，其具有上表面及下表面，光半导体元件以及旁通电容器表面安装在上表面，在上表面具有接合阴极电极以及下电极的导体图案(30)；支撑电介质基板的下表面的导体块(58)。旁通电容器的下电极包括与电介质基板的上表面重合的重合区域(36)、从电介质基板的上表面突出的悬垂区域(38)。

Description

光模块
技术领域
本发明涉及光模块。
背景技术
在光模块中不仅要求高速化还要求低消耗电力化。在50Gbit/s级的高速动作中适用电场吸收型调节器集聚激光器(EML)。EML是集聚有激光二极管(LD)与电场吸收型(EA)调节器的光半导体元件，LD以及EA调节器共有阴极电极(专利文献1)。若为了低消耗电力化而用差动信号驱动EML，则由于调节电信号从阴极电极流入LD，因此波形品质劣化。为了防止该情况，在LD的阳极与阴极之间连接有旁通电容器。
现有技术文献
专利文献1：日本特开2019-134056号公报
为了适用表面安装并在基板上安装旁通电容器，必须扩大配线图案的面积，因此特性阻抗下降而波形品质下降。
发明内容
本发明的目的在于抑制特性阻抗的下降。
(1)本发明的光模块的特征在于，具有：光半导体元件，其集聚有半导体激光器以及光调节器，具有上述半导体激光器的阳极电极、上述光调节器的阳极电极、以及在上述半导体激光器及上述光调节器中共通的阴极电极；旁通电容器，其具有下电极及上电极且并联连接于上述半导体激光器；电介质基板，其具有上表面以及下表面，上述光半导体元件以及上述旁通电容器表面安装在上述上表面上，且在上述上表面具有接合有上述阴极电极以及上述下电极的导体图案；以及导体块，其支撑上述电介质基板的上述下表面，上述旁通电容器的上述下电极包括与上述电介质基板的上述上表面重合的重合区域和从上述电介质基板的上述上表面突出的悬垂区域。
根据本发明，电介质基板未介于旁通电容器的下电极的悬垂区域与导体块之间。因此，寄生电容变小，能够抑制特性阻抗的下降。
(2)根据(1)所述的光模块，其特征在于，上述导体图案包括与上述阴极电极接合的结合部和在从上述结合部向上述旁通电容器的方向延伸且至少局部与上述下电极重合的延长部，上述延长部的位于上述下电极的外侧的部分的面积比上述下电极的上述悬垂区域的面积小。
(3)根据(2)所述的光模块，其特征在于，上述延长部包括与上述重合区域接合的垫片、连接上述结合部和上述垫片的线。
(4)根据(2)或(3)所述的光模块，其特征在于，还具有介于上述下电极的上述重合区域与上述导体图案的上述延长部之间且电连接上述重合区域和上述延长部的衬垫。
(5)本发明的光模块的特征在于，具有：光半导体元件，其集聚有半导体激光器以及光调节器，具有上述半导体激光器的阳极电极、上述光调节器的阳极电极、以及在上述半导体激光器及上述光调节器中共通的阴极电极；旁通电容器，其具有下电极及上电极且并联连接于上述半导体激光器；电介质基板，其具有上表面及下表面，上述光半导体元件及上述旁通电容器表面安装在上述上表面上，且在上述上表面具有连接上述阴极电极及上述下电极的导体图案；衬垫，其介于上述旁通电容器与上述导体图案之间，且电连接上述旁通电容器和上述导体图案；以及导体块，其支撑上述电介质基板的上述下表面，上述导体图案包括与上述阴极电极接合的结合部以及连接于上述下电极的垫片，上述下电极的面积上比上述垫片的面积大。
根据本发明，由于旁通电容器的下电极从导体块离开，因此寄生电容变小，能够抑制特性阻抗的下降。
(6)根据(4)或(5)所述的光模块，其特征在于，上述衬垫包括绝缘基板和贯通上述绝缘基板的导电体。
(7)根据(4)或(5)所述的光模块，其特征在于，上述衬垫包括在侧面具有凹部的绝缘基板和位于上述凹部的去势电极。
(8)根据(7)所述的光模块，其特征在于，上述去势电极通过金锡焊料接合于上述导体图案的上述延长部。
(9)根据(1)至(4)任一项所述的光模块，其特征在于，上述电介质基板的上述下表面的整体与上述导体块对置地被固定。
(10)根据(1)至(4)任一项所述的光模块，其特征在于，上述电介质基板的第一部分被固定于上述导体块，上述电介质基板的第二部分从上述导体块悬垂。
(11)根据(10)所述的光模块，其特征在于，上述电介质基板的上述第一部分以及上述第二部分仅在一个方向上相邻。
(12)根据(10)所述的光模块，其特征在于，上述电介质基板的上述第一部分以及上述第二部分在交叉的至少两个方向上相邻。
(13)根据(10)至(12)任一项所述的光模块，其特征在于，上述导体块在上表面具有第一区域以及第二区域，上述第二区域比上述第一区域低，上述电介质基板的上述第一部分被固定于上述第一区域，上述电介质基板的上述第二部分空出间隔地与上述第二区域对置。
(14)根据(13)所述的光模块，其特征在于，上述下电极的上述悬垂区域不与上述第一区域对置，空出间隔地与上述第二区域对置。
(15)根据(10)至(12)任一项所述的光模块，其特征在于，上述电介质基板的上述第二部分不与上述导体块对置。
(16)根据(15)所述的光模块，其特征在于，上述下电极的上述悬垂区域不与上述导体块对置。
附图说明
图1是第一实施方式的光模块的立体图。
图2是表示图1所示的光组件的内部结构的立体图。
图3是图2所示的结构的局部放大侧视图。
图4是导体图案的俯视图。
图5是光模块的等价电路图。
图6是表示第二实施方式的光组件的内部结构的立体图。
图7是图6所示的衬垫的放大立体图。
图8是在变形例中使用的衬垫的立体图。
图9是用于说明变形例的接合过程的图。
图10是用于说明变形例的接合过程的图。
图11是用于说明变形例的接合过程的图。
图12是用于说明变形例的接合过程的图。
图13是表示第三实施方式的光组件的内部结构的立体图。
图14是图13所示的结构的局部放大侧视图。
图15是表示第四实施方式的光组件的内部结构的立体图。
图16是表示通过使用三维电场解析工具的模拟实验得到的频率特性的图。
图中：10—光半导体元件，12—半导体激光器，14—光调节器，16—阳极电极，18—阳极电极，20—阴极电极，22—旁通电容器，24—下电极，26—上电极，28—电介质基板，30—导体图案，32—结合部，34—焊接材料，36—重合区域，38—悬垂区域，40—延长部，42—焊接材料，44—垫片，46—线，48—第一线部，50—第二线部，52—导线棒，54—接地件，56—终端电阻器，58—导体块，60—电介质块，62—导电层，64—副导体块，66—副电介质基板，68—第一导电层，70—第二导电层，72—电流源，74—同轴线路，76—衬垫，78—绝缘基板，80—导电体，100—光组件，102—柔性基板，104—印刷电路板，176—衬垫，178—绝缘基板，182—凹部，184—去势电极，186—金锡焊料，188—导电性粘接剂，328—电介质基板，358—导体块，390—第一部分，392—第二部分，394—第一区域，396—第二区域，428—电介质基板，458—导体块，490—第一部分，492—第二部分，D1—第一方向，D2—第二方向，W1—金属丝，W2—金属丝，W3—金属丝，W4—金属丝，W5—金属丝，W6—金属丝，W7—金属丝。
具体实施方式
以下，参照附图，具体且详细地说明本发明的实施方式。在全图中标注同一符号的部件是具有相同或同等功能的部件，省略其重复的说明。并且，图形的大小并不是必须与倍率一致的大小。
[第一实施方式]
图1是第一实施方式的光模块的立体图。光模块具有光组件100。光组件100是TO-CAN(Transistor Outline-Can)型封装，可以是内置发光元件的发送光组件(TOSA：Transmitter Optical Sub-Assembly)或内置发光元件以及受光元件两者的双向光组件(BOSA：Bidirectional Optical Sub-Assembly)中的任一个。光组件100连接于柔性基板102。柔性基板102连接于印刷电路板104。
[光半导体元件]
图2是表示图1所示的光组件100的内部结构的立体图。图3是图2所示的结构的局部放大侧视图。光组件具有光半导体元件10。在光半导体元件10上集聚有半导体激光器12以及光调节器14。光半导体元件10具有半导体激光器12的阳极电极16。光半导体元件10具有光调节器14的阳极电极18。光半导体元件10具有在半导体激光器12以及光调节器14中共通的阴极电极20(图3)。
[旁通电容器]
光模块具有旁通电容器22。旁通电容器22是平行平板电容器，具有下电极24以及上电极26。上电极26通过1根以上的金属丝W1连接于半导体激光器12的阳极电极16。
[电介质基板]
光模块具有电介质基板28。电介质基板28优选热传导率优异。电介质基板28具有上表面以及下表面。电介质基板28在上表面具有导体图案30。光半导体元件10表面安装于电介质基板28的上表面。旁通电容器22表面安装于电介质基板28的上表面。
图4是导体图案30的俯视图。导体图案30包括搭载光半导体元件10的结合部32。图3所示的阴极电极20连接于导体图案30(结合部32)。在结合中使用图3所示的焊接材料34(焊料、钎料)。
旁通电容器22部分地从电介质基板28鼓出。如图4所示，下电极24包括与电介质基板28的上表面重合的重合区域36、从电介质基板28的上表面突出的悬垂区域38。
导体图案30包括在从结合部32向旁通电容器22的方向上延伸的延长部40。延长部40至少局部地与下电极24重合。下电极24(重合区域36的至少一部分)接合于导体图案30。在结合中使用焊接材料42(焊料、钎料)。延长部40包括接合于重合区域36的垫片44、连接结合部32和垫片44的线46。延长部40的位于下电极24的外侧(与下电极24不重合)的部分在面积上比下电极24的悬垂区域38小。下电极24的面积比垫片44大。
导体图案30包括从结合部32延伸的第一线部48。第一线部48在与旁通电容器22(下电极24)的相反侧具有端部。导体图案30具有接近结合部32但不连接的第二线部50。第二线部50也在与旁通电容器22(下电极24)的相反侧具有端部。第一线部48的端部以及第二线部50的端部分别相邻。导体图案30包括从结合部32延伸的导线棒52与接地件54。在导线棒52与接地件54之间连接终端电阻器56。终端电阻器56被表面安装。连接终端电阻器56的接地件54通过金属丝W2连接于光调节器14的阳极电极18。终端电阻器56并联连接于光调节器14。
[导体块]
光模块具有导体块58。电介质基板28在下表面被导体块58支撑(粘接)。电介质基板28的下表面的整体与导体块58对置地被固定。导体块58连接于基准电位(例如接地)。导体块58可以搭载于具有未图示的珀尔帖元件的热电冷却器。
在导体块58上搭载由玻璃等的电介质构成的电介质块60。在电介质块60上形成有导电层62。旁通电容器22的上电极26通过金属丝W3连接于电介质块60的导电层62。
在导体块58上空出间隔地排列副导体块64。导体块58与副导体块64热分离。副导体块64也连接于基准电位(例如接地)。导体块58通过一根以上的金属丝W4连接于副导体块64。
在副导体块64上搭载副电介质基板66。在副电介质基板66上形成有第一导电层68以及第二导电层70，两者彼此相邻地排列。导体图案30的第一线部48通过一根以上的金属丝W5连接于第一导电层68。导体图案30的第二线部50通过一根以上的金属丝W6连接于第二导电层70。而且，第二线部50通过金属丝W7连接于光调节器14的阳极电极18。
[等价电路]
图5是光模块的等价电路图。在半导体激光器12中从电流源72输入额定电流。在光调节器14中通过一对同轴线路74输入差动信号(正相信号以及逆相信号)。半导体激光器12与光调节器14共有阴极电极20，但在半导体激光器12上并联连接旁通电容器22。由此，差动信号被旁通而不会混入半导体激光器12。
在本实施方式中，电介质基板28未介于旁通电容器22的下电极24的悬垂区域38与导体块58之间。位于悬垂区域38与导体块58之间的空气在电介质常数中比电介质基板28的材料(如陶瓷)小。因此，寄生电容变小，能够抑制特性阻抗的下降。
[第二实施方式]
图6是表示第二实施方式的光组件的内部结构的立体图。光模块具有衬垫76。本实施方式除了衬垫76与第一实施方式相同。衬垫76介于下电极24(重合区域36)与导体图案30(延长部40)之间，电连接两者(参照图3以及图4)。
图7是图6所示的衬垫76的放大立体图。衬垫76包括绝缘基板78和贯通绝缘基板78的导电体80。导电体80在绝缘基板78的上表面以及下表面上扩大。导电体80比下电极24的重合区域36小。
由于衬垫76而旁通电容器22变高，下电极24的重合区域36(从垫片44鼓出的部分)进一步从导体块58离开。因此，寄生电容进一步变小，能够进一步抑制特性阻抗的下降。
[变形例]
图8是在变形例中使用的衬垫的立体图。衬垫176具有在侧面具有凹部182的绝缘基板178。衬垫176包含位于凹部182的去势电极184。去势电极184在绝缘基板178的上表面以及下表面扩大。
图9～图12是用于说明变形例的接合过程的图。如图9所示，在垫片44上通过蒸镀而设置金锡焊料。
如图10所示，利用被蒸镀的金锡焊料186在垫片44上接合衬垫176。金锡焊料186因加热而熔化，在形成于凹部82的去势电极184的侧面扩大。因此，由于能够用目视确认垫片44与衬垫176的电连接部，因此可抑制不良情况的产生。另外，熔化的金锡焊料186由于沿去势电极184而向上方扩大，因此能够抑制沿电介质基板28上表面的扩大、抑制寄生电容的增加。
金锡焊料186通过由蒸镀形成，能抑制熔化时的流动性。因此，吸附衬垫176的吸盘(未图示)不会吸入熔化的焊料，能够防止吸盘的损伤。去势电极184没有助焊剂而通过金锡焊料186接合于导体图案30的延长部40(垫片44)。
如图11所示，在衬垫176上设置导电性粘接剂188。导电性粘接剂188在绝缘基板178的上表面设置于去势电极184。如图12所示，在衬垫176上接合旁通电容器22。
[第三实施方式]
图13是表示第三实施方式的光组件的内部结构的立体图。图14是图13所示的结构的局部放大侧视图。电介质基板328的第一部分390被固定于导体块358。电介质基板328的第二部分392从导体块358悬垂。电介质基板328的第一部分390以及第二部分392仅在一个方向上相邻。
导体块358在上表面具有第一区域394以及第二区域396。第二区域396比第一区域394低。电介质基板328的第一部分390被固定于第一区域394。电介质基板328的第二部分392与第二区域396空出间隔地对置。旁通电容器22的下电极24的悬垂区域38不与第一区域394对置，与第二区域396空出间隔地对置。
在本实施方式中，由于第二区域396低，因此下电极24的重合区域36进一步从导体块358离开。因此，寄生电容进一步变小，能够进一步抑制特性阻抗的下降。
导体图案30的垫片44(参照图4)避免与第一区域394的重合，位于第二区域396的上方。另外，旁通电容器22的下电极24也避免与第一区域394的重合，位于第二区域396的上方。垫片44以及下电极24从导体块358离开。另外，空气介于垫片44与导体块358之间。因此，寄生电容进一步变小，能够进一步抑制特性阻抗的下降。
[第四实施方式]
图15是表示第四实施方式的光组件的内部结构的立体图。电介质基板428的第一部分490被固定于导体块458。电介质基板428的第二部分492从导体块458悬垂。电介质基板428的第二部分492不与导体块458对置。旁通电容器22的下电极24的悬垂区域38(参照图4)不与导体块458对置。因此，寄生电容进一步变小，能够进一步抑制特性阻抗的下降。
电介质基板428的第一部分490以及第二部分492在交叉的至少两个方向(图15所示的第一方向D1以及第二方向D2)上相邻。因此，电介质基板428难以倾斜。关于这方面，在第三实施方式中，由于第一部分490与第二部分492的边界线为一条直线，因此电介质基板328容易倾斜。其他内容可适用在第三实施方式中说明的内容。
图16是表示通过使用三维电场解析工具的模拟实验而获得的频率特性的图。频率特性是差动信号的传送特性。在比较例中，旁通电容器的下电极的整体与电介质基板重合。可以看出，寄生电容越小则传送特性越优异。
本发明并未限于上述的实施方式，可有多种变形。例如，在实施方式中说明的结构能够用实质性相同的结构、能够起到相同的作用效果的结构或能够实现同一目的的结构进行置换。

Claims (16)

1.一种光模块，其特征在于，
具有：
光半导体元件，其集聚有半导体激光器以及光调节器，具有上述半导体激光器的阳极电极、上述光调节器的阳极电极、以及在上述半导体激光器以及上述光调节器中共通的阴极电极；
旁通电容器，其具有下电极以及上电极且并联连接于上述半导体激光器；
电介质基板，其具有上表面以及下表面，上述光半导体元件以及上述旁通电容器表面安装在上述上表面上，在上述上表面上具有接合有上述阴极电极以及上述下电极的导体图案；以及
支撑上述电介质基板的上述下表面的导体块，
上述旁通电容器的上述下电极包括与上述电介质基板的上述上表面重合的重合区域、以及从上述电介质基板的上述上表面突出的悬垂区域。
2.根据权利要求1所述的光模块，其特征在于，
上述导体图案包括与上述阴极电极接合的结合部、在从上述结合部向上述旁通电容器的方向上延伸且至少局部地与上述下电极重合的延长部，
上述延长部的位于上述下电极的外侧的部分的面积比上述下电极的上述悬垂区域的面积小。
3.根据权利要求2所述的光模块，其特征在于，
上述延长部包括与上述重合区域接合的垫片、以及连接上述结合部和上述垫片的线。
4.根据权利要求2所述的光模块，其特征在于，
还具有介于上述下电极的上述重合区域与上述导体图案的上述延长部之间且电连接上述重合区域和上述延长部的衬垫。
5.根据权利要求1所述的光模块，其特征在于，
上述电介质基板的上述下表面的整体与上述导体块对置地被固定。
6.根据权利要求1所述的光模块，其特征在于，
上述电介质基板的第一部分固定于上述导体块，
上述电介质基板的第二部分从上述导体块悬垂。
7.根据权利要求6所述的光模块，其特征在于，
上述电介质基板的上述第一部分以及上述第二部分仅在一个方向上相邻。
8.根据权利要求6所述的光模块，其特征在于，
上述电介质基板的上述第一部分以及上述第二部分在交叉的至少两个方向上相邻。
9.根据权利要求6至8任一项所述的光模块，其特征在于，
上述导体块在上表面具有第一区域以及第二区域，上述第二区域比上述第一区域低，
上述电介质基板的上述第一部分固定于上述第一区域，
上述电介质基板的上述第二部分与上述第二区域空出间隔地对置。
10.根据权利要求9所述的光模块，其特征在于，
上述下电极的上述悬垂区域不与上述第一区域对置，与上述第二区域空出间隔地对置。
11.根据权利要求6至8任一项所述的光模块，其特征在于，
上述电介质基板的上述第二部分不与上述导体块对置。
12.根据权利要求11所述的光模块，其特征在于，
上述下电极的上述悬垂区域不与上述导体块对置。
13.一种光模块，其特征在于，
具有：
光半导体元件，其集聚有半导体激光器以及光调节器，具有上述半导体激光器的阳极电极、上述光调节器的阳极电极、以及在上述半导体激光器及上述光调节器中共通的阴极电极；
旁通电容器，其具有下电极以及上电极且并联连接于上述半导体激光器；
电介质基板，其具有上表面以及下表面，上述光半导体元件以及上述旁通电容器表面安装在上述上表面上，在上述上表面具有接合有上述阴极电极以及上述下电极的导体图案；
衬垫，其介于上述旁通电容器与上述导体图案之间，且电连接上述旁通电容器和上述导体图案；以及
支撑上述电介质基板的上述下表面的导体块，
上述导体图案包括与上述阴极电极接合的结合部、以及与上述下电极接合的垫片，
上述下电极的面积比上述垫片的面积大。
14.根据权利要求4或13所述的光模块，其特征在于，
上述衬垫包括绝缘基板和贯通上述绝缘基板的导电体。
15.根据权利要求4或13所述的光模块，其特征在于，
上述衬垫包括在侧面具有凹部的绝缘基板和位于上述凹部的去势电极。
16.根据权利要求15所述的光模块，其特征在于，
上述去势电极通过金锡焊料与上述导体图案接合。
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