CN114075653B - Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device - Google Patents
Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device Download PDFInfo
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- CN114075653B CN114075653B CN202010836244.9A CN202010836244A CN114075653B CN 114075653 B CN114075653 B CN 114075653B CN 202010836244 A CN202010836244 A CN 202010836244A CN 114075653 B CN114075653 B CN 114075653B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The invention discloses a conductive film, a preparation method of the conductive film, a current collection and transmission material and an energy storage device, and relates to the technical field of conductive films, wherein the conductive film comprises a film base material, a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating; the double-sided first metal coating is formed on two surfaces of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water plating device; the double-sided PI film is single-sided compounded on the outer surfaces of the double-sided second metal plating layers through coating compounding equipment; the double-sided third metal coating is formed on the surface of the PI film through magnetron sputtering coating equipment, and the double-sided fourth metal coating is formed on the double-sided third metal coating through a vacuum evaporation device; the double-sided fifth metal coating is formed on the double-sided fourth metal coating through a water plating device; the beneficial effects of the invention are as follows: the limit on the thickness of the outer film substrate is relaxed, and the strength and compactness of the coating material are improved.
Description
Technical Field
The invention relates to the technical field of conductive films, in particular to a conductive film, a preparation method of the conductive film and application of the conductive film as a current collection and transmission material in an energy storage device.
Background
At present, the vacuum coating technology is widely applied to the high-tech fields of electronic products, optical elements, sensors and the like, and researchers develop various vacuum coating equipment suitable for different technical requirements according to the characteristics of various production chains.
The vacuum coating technology is mainly divided into two types of evaporation coating and sputtering coating. The evaporating coating method is to make the evaporating material become clusters, molecules or atoms by means of current heating, electron beam heating or laser heating in vacuum environment, and to make free motion in relatively great free range. The evaporation coating method has the advantages of high purity and good crystallization, and is commonly used for producing and manufacturing metal films, semiconductor films and thin film solar cell materials.
When the conductive film is produced, a process line of combining an evaporation coating with a water plating coating is generally adopted. In order to meet the thickness requirement of the conductive film, there is a specific requirement on the thickness of the base film, which makes it necessary to limit the thickness of the base film when the conductive film is produced, and the thickness of the base film can be only within a certain range and cannot be too thin or too thick. In addition, when evaporation coating is carried out, a material (such as copper) to be evaporated is added into a crucible, the material is heated, the phenomenon of uneven heating is unavoidable, the situation that the local temperature is too high occurs when the material is heated unevenly, the base film is scalded through when meeting the base film, holes are formed, and therefore the qualification rate of products is affected.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides the conductive film, which widens the limit on the thickness of an outer film substrate, avoids the phenomenon of holes and improves the product yield.
The technical scheme adopted for solving the technical problems is as follows: in a conductive film, the improvement comprising: the metal coating comprises a film substrate, a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating;
the double-sided first metal coating is formed on one surface of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water plating device;
the double-sided PI film is coated on the outer surface of the double-sided second metal coating through coating composite equipment, the double-sided third metal coating is formed on the outer surface of the double-sided PI film through magnetron sputtering coating equipment, the double-sided fourth metal coating is formed on the third metal coating through a vacuum evaporation coating device, and the fifth metal layer is formed on the fourth metal coating through a water coating device;
and the film substrate is stripped between the formed double-sided fifth metal coating and the double-sided first metal layer, and the two rolls of finished films of the conductive film are formed after the film substrate is stripped.
In the above structure, the film substrate includes, but is not limited to, PP film, PE film or PET film.
In the above structure, the transition film is any one of PP film, PE film and PET film.
In the structure, the thickness of the film base material is 12-20 mu m, and the thickness of the finished film of the conductive film is 3-6 mu m;
in the structure, the thickness of the first metal coating is 50-200nm;
in the structure, the thickness of the second metal coating is 600-900nm;
in the above structure, the thickness of the PI film is 1-4 μm;
in the structure, the thickness of the third metal coating is 5-50nm;
in the structure, the thickness of the fourth metal coating is 50-200nm;
in the above structure, the thickness of the fifth metal plating layer is 600-900nm;
in the above structure, the first metal plating layer, the second metal plating layer, the third metal plating layer, the fourth metal plating layer and the fifth metal plating layer are copper plating layers.
The invention also provides a preparation method of the conductive film, which is improved in that: the method comprises the following steps:
s1, coating release agents with the thickness of 0.3-1um on the upper surface and the lower surface of the film substrate. Forming a double-sided release coating;
s2, synchronously coating films on the surfaces of the double-sided release coatings by adopting vacuum coating equipment, and respectively forming 50-200nm double-sided first metal coatings;
s3, synchronously forming a 600-900nm double-sided second metal coating on the outer surface of the double-sided first metal coating through a water plating device;
s4, coating PI material on the outer surface of the double-sided second metal coating by using coating composite equipment, and then performing heat curing to synchronously form a double-sided PI film of 1-4 mu m on the surface of the double-sided second metal coating;
s5, coating films on the double-sided PI film surfaces by adopting double-sided magnetron sputtering coating equipment, and forming double-sided third metal coatings of 5-50nm respectively;
s6, synchronously coating films on the double-sided third metal coating by adopting double-sided vacuum evaporation coating equipment to form a double-sided fourth metal coating with the thickness of 50-200nm;
s7, adopting a water plating device to perform synchronous plating on the double-sided fourth metal plating layers to form 600-900nm double-sided fifth metal plating layers respectively;
s8, stripping the film base material along the first metal layers on the two sides, so that a finished film of the two rolls of conductive films is formed.
Further, in the step S1, the film substrate includes but is not limited to PP film, PE film or PET film.
Further, in the step S2, the vacuum coating apparatus includes, but is not limited to, a vacuum evaporation coating apparatus or a magnetron sputtering coating apparatus.
Further, the PI material in step S4 is coated by double-sided synchronous coating or by single-sided coating, and then the other side is coated.
Further, the thickness of the film base material is 12-20 mu m; the thickness of the finished film of the conductive film is 3-6 mu m.
Further, the double-sided first metal coating, the double-sided second metal coating, the double-sided third metal coating, the double-sided fourth metal coating and the double-sided fifth metal coating are all copper plating layers.
Further, in the step S3 and the step S7, the water plating device is an alkaline water plating device or an acidic water plating device.
Further, in the step S8, the single-sided sheet resistance of the finished film obtained after the peeling is within 20mΩ.
Further, in the step S8, a stripper is used to strip the film substrate.
The invention also discloses a current collection and transmission material, which is improved in that: including the finished film described above.
The invention also discloses an energy storage device, which comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, and is characterized in that: the cathode plate uses the current collector.
The beneficial effects of the invention are as follows: the limit on the thickness of the substrate of the external film is relaxed; avoiding the phenomenon that the base material in the prior art is easy to generate bubbles and holes in the evaporation plating process; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
Drawings
Fig. 1 is a schematic cross-sectional view of a conductive film formed according to the present invention.
Fig. 2 is a schematic cross-sectional view of a finished film of a conductive film according to the present invention.
Fig. 3 is a schematic flow chart of a method for preparing a conductive film according to the present invention.
Detailed Description
The invention will be further described with reference to the drawings and examples.
The conception, specific structure, and technical effects produced by the present invention will be clearly and completely described below with reference to the embodiments and the drawings to fully understand the objects, features, and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention. In addition, all the coupling/connection relationships referred to in the patent are not direct connection of the single-finger members, but rather, it means that a better coupling structure can be formed by adding or subtracting coupling aids depending on the specific implementation. The technical features in the invention can be interactively combined on the premise of no contradiction and conflict.
Example 1
Referring to fig. 1, the present invention discloses a conductive film, which specifically includes a film substrate 10, a double-sided first metal plating layer 30, a double-sided second metal plating layer 40, a double-sided PI film 50, a double-sided third metal plating layer 60, a double-sided fourth metal plating layer 70, and a double-sided fifth metal plating layer 80; the double-sided first metal plating layer 20 is formed on two surfaces of the film substrate 10 by a vacuum plating device, the double-sided second metal plating layer 40 is formed on the double-sided first metal plating layer 30 by a water plating device, in this embodiment, the film substrate 10 is a PET film with a thickness of 12 μm, the thickness of the double-sided first metal plating layer 30 is 50nm, and the thickness of the double-sided second metal plating layer 40 is 900nm. Further, the PI film 50 is coated on the outer surface of the double-sided second metal coating 40 by a coating composite device, wherein the thickness of the double-sided PI film 50 is 1 μm, the double-sided third metal coating 60 is formed on the outer surface of the double-sided PI film 50 by a magnetron sputtering coating device, the double-sided fourth metal coating 70 is formed on the double-sided third metal coating 60 by a vacuum evaporation device, and the double-sided fifth metal coating 80 is formed on the double-sided fourth metal coating 70 by a water plating device; the thickness of the double-sided third metal plating layer 60 is 5nm, the thickness of the double-sided fourth metal plating layer 70 is 200nm, and the thickness of the double-sided fifth metal plating layer 80 is 800nm. Referring to fig. 1, the film substrate 10 is peeled off along the gap between the film substrate 10 and the double-sided first metal layer after the fifth metal plating layer 80 is formed, and the film thickness of the two rolls of finished product after peeling off the film substrate 10 is 3 μm. In the above embodiment, the double-sided first metal plating layer 30, the double-sided second metal plating layer 40, the double-sided third metal plating layer 60, the double-sided fourth metal plating layer 70, and the double-sided fifth metal plating layer 80 are copper plating layers.
As shown in fig. 3, in this embodiment, there is also provided a method for preparing a conductive film, and the detailed steps of the preparation method are as follows:
s1, coating release agents on the upper surface and the lower surface of a film substrate 10 with the thickness of 12 mu m to form a release agent layer (not shown in the drawing) with the thickness of 0.3 mu m, wherein the film substrate 10 is a PET film.
S2, coating the surface of the release agent layer with the thickness of 0.3 mu m by adopting vacuum coating equipment to form a 50 nm-thick double-sided first metal coating 30, wherein the vacuum coating equipment is vacuum evaporation coating equipment, and the double-sided first metal coating 30 is a copper plating layer;
s3, forming a 900nm double-sided second metal coating 40 on the outer surface of the double-sided first metal coating 30 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the double-sided second metal coating 40 is a copper plating layer;
s4, using coating composite equipment, firstly coating PI material on one outer surface of the double-sided second metal coating 30, then coating PI material on the double-sided second metal coating 30 positioned on the other surface of the film substrate, and then performing heat curing on the PI material to form PI films 40 with the thickness of 1 mu m respectively;
s5, synchronously coating films on the surfaces of the double-sided PI films 50 by adopting double-sided magnetron sputtering coating equipment to form a 5nm double-sided third metal coating 60, wherein the double-sided third metal coating 60 is a copper plating layer;
s6, synchronously coating films on the surfaces of the double-sided third metal coating 60 by adopting double-sided vacuum evaporation coating equipment to form a 200nm fourth metal coating 70, wherein the fourth metal coating 70 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 800nm fifth metal plating layer 80, wherein in the step, the water plating device is the same as the water plating device in the step S3 and is alkaline water plating equipment, and the same alkaline water plating equipment or two same alkaline water plating equipment can be adopted; likewise, the fifth metal layer is a copper plating layer; fig. 1 is a schematic diagram of a structure of a double-sided fifth metal plating 80 after being formed;
s8, stripping the film substrate 10 along the first metal layers on the two sides by using a stripping machine to form two rolls of 3 mu m finished film, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
In this embodiment, the thickness of the film substrate 10 is 12 μm, and based on the preparation method of the present invention, the thickness of the film substrate 10 can be arbitrarily selected from 12-20 μm, thereby relaxing the limitation on the thickness of the outer film substrate 10. In the prior art, a process line adopting evaporation coating has the problem of bubble formation and the problem of holes, wherein the bubble formation problem is that when the evaporation coating process is carried out, the deformation of a base film is deteriorated due to the higher temperature of the evaporation coating process, and a series of deformations in the film running direction are generated; the cross foam can affect the product quality on one hand, and the consistency of the product on the other hand, so that about 30% quality loss is formed for the product. The problem of holes is that when the evaporation coating process is carried out, the base film is broken down easily by high-temperature metal particles due to high process temperature and tiny fluctuation, so that holes are formed, and the holes can cause the phenomenon of material leakage in the surface treatment process in the process of processing and using a rear industrial chain, so that a certain probability can cause great safety risk to terminal products. The preparation method of the conductive film avoids the phenomenon that the base material in the prior art is easy to generate bubbles and holes in the evaporation plating process; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collector, which comprises the conductive film formed in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is provided with the current collector.
Example 2
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, which comprises the following steps:
s1, coating a release agent on the upper surface and the lower surface of a film substrate 10 with the thickness of 20 mu m to form a release agent layer (not shown in the drawing) with the thickness of 1 mu m, wherein the film substrate 10 is a PE film.
S2, coating a film on the surface of the release agent layer with the thickness of 1 mu m by adopting vacuum coating equipment to form a 200 nm-thick double-sided first metal coating 30, wherein the vacuum coating equipment is magnetron sputtering coating equipment, and the double-sided first metal coating 30 is a copper plating layer;
s3, forming a 600nm double-sided second metal coating 40 on the outer surface of the double-sided first metal coating 30 through a water plating device, wherein the water plating device is acid water plating equipment, and the double-sided second metal coating 40 is a copper plating layer;
s4, using a coating composite device, firstly coating PI material on one outer surface of the double-sided second metal coating 30, then synchronously coating PI material on the surfaces of the double-sided second metal coating 30, and then thermally curing the PI material to form PI films 40 with the thickness of 3 mu m respectively, wherein the coating composite device is very mature in the prior art, and the structure and the principle of the coating composite device are not described in detail in the embodiment;
s5, synchronously coating films on the surfaces of the double-sided PI films 50 by adopting double-sided magnetron sputtering coating equipment to form 50nm double-sided third metal coating layers 60, wherein the double-sided third metal coating layers 60 are copper plating layers;
s6, synchronously coating films on the surfaces of the double-sided third metal coating 60 by adopting double-sided evaporation coating equipment to form a 200nm double-sided fourth metal coating 70, wherein the double-sided fourth metal coating 70 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 600nm double-sided fifth metal plating layer 80, wherein in the step, the water plating device is acid water plating equipment, and the double-sided fifth metal layer is a copper plating layer; fig. 1 is a schematic diagram of a structure of a double-sided fifth metal plating 80 after being formed;
s8, stripping the film substrate 10 along the first metal layers on the two sides by using a stripping machine to form two rolls of 5 mu m finished film, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
Based on the preparation method, the limit on the thickness of the external film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the prior art line is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collector, which comprises the conductive film formed in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is provided with the current collector.
Example 3
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, which comprises the following steps:
s1, coating release agents on the upper surface and the lower surface of a film substrate 10 with the thickness of 18 mu m to form a 0.5 mu m double-sided release agent layer, wherein the film substrate 10 is a PP film.
S2, synchronously coating a film on the surface of the release agent layer with the thickness of 0.5 mu m by adopting vacuum coating equipment to form a double-sided first metal coating 30 with the thickness of 100nm, wherein the vacuum coating equipment is vacuum evaporation coating equipment, and the double-sided first metal coating 30 is a copper plating layer;
s3, synchronously forming a 850nm double-sided second metal coating 40 on the outer surface of the double-sided first metal coating 30 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the double-sided second metal coating 40 is a copper plating layer;
s4, using a coating composite device, firstly coating PI material on one outer surface of the double-sided second metal coating 30, then coating PI material on the double-sided second metal coating 30 positioned on the other surface of the film substrate, and then performing heat curing to form 4 mu m PI films 40 respectively, wherein the coating composite device is very mature in the prior art, and the structure and principle of the coating composite device are not described in detail in the embodiment;
s5, synchronously coating films on the surfaces of the double-sided PI films 50 by adopting double-sided magnetron sputtering coating equipment to form a 15nm double-sided third metal coating 60, wherein the double-sided third metal coating 60 is a copper plating layer;
s6, synchronously coating films on the surfaces of the double-sided third metal coating 60 by adopting double-sided evaporation coating equipment to form a 200nm double-sided third metal coating 60, wherein the double-sided third metal coating 80 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 800nm fifth metal plating layer 80, wherein in the step, the water plating device is acid water plating equipment, and the double-sided fifth metal layer is a copper plating layer; fig. 1 is a schematic diagram of a structure of a double-sided fifth metal plating 80 after being formed;
s8, stripping the film substrate 10 along the gap between the film substrate and the double-sided first metal layer to form two rolls of 6 mu m finished film, wherein the single-sided sheet resistance is within 20mΩ; as shown in fig. 2, a schematic cross-sectional view of the finished film.
Based on the preparation method, the limit on the thickness of the external film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the prior art line is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
In addition, the invention also discloses a current collector, which comprises the conductive film formed in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the cathode pole piece is provided with the current collector.
Example 4
Referring to fig. 1, the present invention discloses a conductive film, which specifically includes a film substrate 10, a double-sided first metal plating layer 30, a double-sided second metal plating layer 40, a double-sided PI film 50, a double-sided third metal plating layer 60, a double-sided fourth metal plating layer 70, and a double-sided fifth metal plating layer 80; the double-sided first metal plating layer 30 is formed on the surface of the double-sided release agent layer 20 by a vacuum plating apparatus, and the double-sided second metal plating layer 40 is formed on the double-sided first metal plating layer 30 by a water plating device, thereby forming the double-sided first metal plating layer 30 and the double-sided second metal plating layer 40 on the surface of the film base material 10, in this embodiment, the film base material 10 is a PET film with a thickness of 15 μm, the thickness of the double-sided first metal plating layer 30 is 150nm, and the thickness of the double-sided second metal plating layer 40 is 800nm.
Further, the double-sided PI film 50 is formed by simultaneously coating PI material on the outer surface of the double-sided second metal plating layer 40 by a coating composite device, wherein the thickness of the double-sided PI film 50 is 2 μm, the double-sided third metal plating layer 60 is formed on the outer surface of the PI film 50 by a magnetron sputtering coating device, and the double-sided fourth metal plating layer 70 is formed on the double-sided third metal plating layer 60 by a vacuum evaporation coating device; the thickness of the double-sided third metal plating layer 60 is 5nm, the thickness of the double-sided fourth metal plating layer 70 is 100nm, and the thickness of the double-sided fifth metal plating layer 80 is 900nm. As shown in fig. 1 and 2, the film substrate 10 was peeled off after the formation of the double-sided fifth metal plating layer 80, and the thickness of the final film formed after peeling off the film substrate 10 was 4 μm. In this embodiment, the double-sided first metal plating layer 20, the double-sided second metal plating layer 30, the double-sided third metal plating layer 60, the double-sided fourth metal plating layer 70 and the double-sided fifth metal plating layer are copper plating layers.
In the above embodiment 4, the vacuum coating apparatus is a magnetron sputtering coating apparatus, and the water plating device is an alkaline water plating apparatus.
In this embodiment, the limitation on the thickness of the outer film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in the evaporation plating in the prior art circuit is avoided; the PI raw material is used for replacing the original formed film, so that the production energy consumption and the material cost are reduced, and the product rate can be improved to a great extent.
Example 5
In this embodiment, a method for manufacturing a conductive thin film is provided, which is exactly the same as that of embodiment 1, and thus the steps of the manufacturing method are not described in detail in this embodiment, but only the thickness of the thin film base material 10 and each plating layer is different, wherein in this embodiment, the thickness of the thin film base material 10 is 15 μm, the thickness of the double-sided first metal plating layer 20 is 200nm, the thickness of the double-sided second metal plating layer 30 is 800nm, the thickness of the pi film 40 is 3 μm, the thickness of the double-sided third metal plating layer 60 is 10nm, and the thickness of the double-sided fourth metal plating layer 70 is 200nm. The thickness of the finished product film after molding is 5 μm because of the 800nm of the double-sided fifth metal coating.
In all the above embodiments, the thickness of the PI film is controlled between 1-4 μm, and the PI film has the advantages of smaller resistance, higher capacity density, lighter weight and the like compared with the common copper foil or other copper-plated films. The magnetron sputtering coating equipment generally comprises a vacuum cavity, and an unreeling mechanism, a reeling mechanism, a cooling main drum, an unreeling swing frame and a reeling swing frame which are arranged in the vacuum cavity, wherein the unreeling mechanism and the reeling mechanism are arranged up and down, one side of the film substrate 10 is coated through one cooling main drum after passing through the unreeling mechanism, and the reeling mechanism is used for reeling materials to realize coating on the film substrate 10. The alkaline water plating device generally comprises an unreeling roll, a reeling roll and a plurality of electroplating devices arranged between the unreeling roll and the reeling roll, wherein each electroplating device comprises a plurality of plating baths and oxidation resistance baths, and further comprises a transition roll, a flattening roll, a tension roll and other structures, and the purpose of the alkaline water plating device is to sequentially pass through the plurality of plating baths for the film substrate 10 to form a metal plating layer meeting requirements on the surface of the film substrate 10. In addition, since the structure of the vacuum evaporation plating and acid water plating apparatuses is also mature in the prior art, the above-described embodiments have not been described in detail.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.
Claims (18)
1. A conductive film, characterized in that: the metal coating comprises a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating;
the double-sided first metal coating is formed on the surface of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water plating device;
the PI film is compounded on the outer surface of the double-sided second metal coating through coating compounding equipment, and the double-sided third metal coating is formed on the outer surface of the double-sided PI film through magnetron sputtering coating equipment;
the double-sided fourth metal coating is formed on the double-sided third metal coating through a vacuum evaporation device, and the outer surface of the double-sided fourth metal coating is formed through water plating equipment;
and the film substrate is stripped between the formed double-sided fifth metal coating and the double-sided first metal layer, and two rolls of conductive film finished products are formed after the film substrate is stripped.
2. The conductive film according to claim 1, wherein: the film substrate includes, but is not limited to, PP film, PE film or PET film.
3. The conductive film according to claim 1, wherein: the thickness of the film base material is 12-20 mu m; the thickness of the finished film of the conductive film is 3-6 mu m.
4. The conductive film according to claim 1, wherein: the thickness of the first metal coating is 50-200nm.
5. The conductive film according to claim 1, wherein: the thickness of the second metal coating is 600-900nm.
6. The conductive film according to claim 1, wherein: the thickness of the PI film is 1-4 mu m.
7. The conductive film according to claim 1, wherein: the thickness of the third metal coating is 5-50nm.
8. The conductive film according to claim 1, wherein: the thickness of the fourth metal coating is 50-200nm.
9. The conductive film according to claim 1, wherein: the thickness of the fifth metal coating is 600-900nm.
10. The conductive film according to claim 1, wherein: the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are copper plating layers.
11. A method for preparing a conductive film, comprising the steps of:
s1, coating release agents with the thickness of 0.3-1 mu m on the upper surface and the lower surface of a film substrate to form a double-sided release coating;
s2, synchronously coating films on the surfaces of the double-sided release coatings by adopting vacuum coating equipment, and respectively forming double-sided first metal coatings with the thickness of 50-200nm;
s3, synchronously forming a 600-900nm thick double-sided second metal coating on the outer surface of the double-sided first metal coating through a water plating device;
s4, coating PI material on the outer surface of the double-sided second metal coating by using coating composite equipment, and then performing heat curing to synchronously form a double-sided PI film of 1-4 mu m on the surface of the double-sided second metal coating;
s5, coating films on the double-sided PI film surfaces synchronously by adopting double-sided magnetron sputtering coating equipment to form a double-sided third metal coating;
s6, synchronously coating films on the double-sided third metal coating by adopting double-sided vacuum evaporation coating equipment to form a double-sided fourth metal coating with the thickness of 50-200nm;
s7, adopting a water plating device to perform synchronous plating on the double-sided fourth metal plating layers to form double-sided fifth metal plating layers with the thickness of 600-900nm;
s8, stripping the film base material along the first metal layers on the two sides, so that a finished film of the two rolls of conductive films is formed.
12. The method for producing a conductive film according to claim 11, wherein: in the step S1, the film substrate includes but is not limited to PP film, PE film or PET film.
13. The method for producing a conductive film according to claim 11, wherein: in the step S2, the vacuum coating apparatus includes, but is not limited to, a vacuum evaporation coating apparatus or a magnetron sputtering coating apparatus.
14. The method for producing a conductive film according to claim 11 or 12, characterized in that: the thickness of the film base material is 12-20 mu m; the thickness of the finished film of the conductive film is 3-6 mu m.
15. The method for producing a conductive film according to claim 11, wherein: the PI material in step S4 is coated in a double-sided synchronous coating manner or coated on the other side after the single-sided coating is completed.
16. The method for producing a conductive film according to claim 11, wherein: the double-sided first metal coating, the double-sided second metal coating, the double-sided third metal coating, the double-sided fourth metal coating and the double-sided fifth metal coating are all copper plating layers.
17. The method for producing a conductive film according to claim 11, wherein: in the step S3 and the step S7, the water plating device is alkaline water plating equipment or acid water plating equipment.
18. The method for producing a conductive film according to claim 11, wherein: in the step S8, a stripper is used to strip the film substrate.
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| CN202010836244.9A CN114075653B (en) | 2020-08-22 | 2020-08-22 | Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device |
| PCT/CN2020/123847 WO2022041447A1 (en) | 2020-08-22 | 2020-10-27 | Conductive thin film, method for manufacturing conductive thin film, current collecting and transmitting material, and energy storage apparatus |
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| JP2004079661A (en) * | 2002-08-13 | 2004-03-11 | Tokai Rubber Ind Ltd | Method of manufacturing flexible printed board |
| US6933077B2 (en) * | 2002-12-27 | 2005-08-23 | Avestor Limited Partnership | Current collector for polymer electrochemical cells and electrochemical generators thereof |
| JP4872257B2 (en) * | 2005-07-19 | 2012-02-08 | 住友金属鉱山株式会社 | Two-layer plated substrate and manufacturing method thereof |
| WO2009050970A1 (en) * | 2007-10-18 | 2009-04-23 | Nippon Mining & Metals Co., Ltd. | Metal covered polyimide composite, process for producing the composite, and apparatus for producing the composite |
| KR20150020621A (en) * | 2012-06-04 | 2015-02-26 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Method for producing multilayer printed wiring board |
| CN103668094A (en) * | 2013-12-05 | 2014-03-26 | 江苏科技大学 | Method for making five-layer flexible non-glued double-sided copper clad by adopting sputtering process |
| TWI490115B (en) * | 2014-03-07 | 2015-07-01 | Azotek Co Ltd | Metal substrate and fabricating method thereof |
| CN104960278A (en) * | 2015-04-09 | 2015-10-07 | 柏弥兰金属化研究股份有限公司 | Method for manufacturing single-surface thin type metal substrate |
| TWI585245B (en) * | 2015-04-09 | 2017-06-01 | 柏彌蘭金屬化研究股份有限公司 | Method for producing single sided thin metal clad laminate |
| TWI564145B (en) * | 2015-06-17 | 2017-01-01 | 長興材料工業股份有限公司 | Metal-clad laminate and method of manufacturing the same |
| CN106981665A (en) * | 2017-04-14 | 2017-07-25 | 深圳鑫智美科技有限公司 | A kind of negative current collector, its preparation method and its application |
| CN107221676A (en) * | 2017-06-30 | 2017-09-29 | 江苏道赢科技有限公司 | A kind of lithium rechargeable battery of composite current collector and the application collector |
| CN108531876A (en) * | 2018-03-26 | 2018-09-14 | 安徽金美新材料科技有限公司 | A kind of coating process flow for lithium battery collector |
| CN210295930U (en) * | 2019-08-20 | 2020-04-10 | 昆山汉品电子有限公司 | High-temperature-resistant conductive film |
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