CN114075653A - Conductive film, preparation method of conductive film, current collection and transmission material and energy storage device - Google Patents
Conductive film, preparation method of conductive film, current collection and transmission material and energy storage device Download PDFInfo
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- CN114075653A CN114075653A CN202010836244.9A CN202010836244A CN114075653A CN 114075653 A CN114075653 A CN 114075653A CN 202010836244 A CN202010836244 A CN 202010836244A CN 114075653 A CN114075653 A CN 114075653A
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
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- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
The invention discloses a conductive film, a preparation method of the conductive film, a current collection transmission material and an energy storage device, and relates to the technical field of conductive films, wherein the conductive film comprises a film substrate, a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating; the double-sided first metal coating is formed on two surfaces of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water coating device; the double-sided PI film is compounded on the outer surface of the double-sided second metal coating layer through a single side of coating compounding equipment; the double-sided third metal coating is formed on the surface of the PI film through magnetron sputtering coating equipment, and the double-sided fourth metal coating is formed on the double-sided third metal coating through a vacuum evaporation device; the double-sided fifth metal coating is formed on the double-sided fourth metal coating through a water plating device; the invention has the beneficial effects that: the limitation on the thickness of the outer layer film substrate is relaxed, and the strength and the compactness of the coating material are improved.
Description
Technical Field
The invention relates to the technical field of conductive films, in particular to a conductive film, a preparation method of the conductive film and application of the conductive film as a current collection and transmission material in an energy storage device.
Background
At present, vacuum coating technology is widely used in high-tech fields such as electronic products, optical elements, sensors and the like, and researchers develop various vacuum coating devices suitable for different technical requirements according to the characteristics of various production chains.
The vacuum coating technology is mainly divided into two types, namely evaporation coating and sputtering coating. The evaporation coating method is that the evaporation material is changed into clusters, molecules or atoms by using methods such as current heating, electron beam heating or laser heating and the like in a vacuum environment, the evaporation material moves near freely with a larger free path, when the freely moving molecules or atoms collide with a base film with lower temperature, the molecules or atoms are condensed on the base film, and the base film is deposited and covered to form a thin film metal coating. The evaporation coating method has the advantages of high purity and good crystallization, and is commonly used for producing and manufacturing metal films, semiconductor films and thin-film solar cell materials.
In the production of conductive films, the process line is generally formed by combining evaporation coating with water plating coating. In order to meet the thickness requirement of the conductive film, the thickness of the base film has specific requirements, so that the thickness of the base film is limited when the conductive film is produced, and the thickness of the base film can only be within a certain range and cannot be too thin or too thick. In addition, when evaporation coating is carried out, materials to be evaporated (such as copper) are added into a crucible and heated, the phenomenon of nonuniform heating is inevitable, the situation of overhigh local temperature can occur when the materials are unevenly heated, and the base film can be scalded and penetrated to form holes when meeting the base film, so that the qualification rate of products is influenced.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides the conductive film, which relaxes the limitation on the thickness of the outer layer film substrate, avoids the phenomenon of holes and improves the product yield.
The technical scheme adopted by the invention for solving the technical problems is as follows: in a conductive film, the improvement comprising: the film comprises a film substrate, a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating;
the double-sided first metal coating is formed on one surface of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water plating device;
the double-sided PI film is coated on the outer surface of the double-sided second metal coating through coating composite equipment, the double-sided third metal coating is formed on the outer surface of the double-sided PI film through magnetron sputtering coating equipment, the double-sided fourth metal coating is formed on the third metal coating through a vacuum evaporation coating device, and the fifth metal coating is formed on the fourth metal coating through a water coating device;
the film substrate is stripped from the double-sided first metal layer after the double-sided fifth metal plating layer is formed, and two rolls of finished films of the conductive film are formed after the film substrate is stripped.
In the above structure, the film substrate includes, but is not limited to, a PP film, a PE film, or a PET film.
In the above structure, the transition film is any one of a PP film, a PE film and a PET film.
In the structure, the thickness of the film base material is 12-20 μm, and the thickness of the finished conductive film is 3-6 μm;
in the above structure, the first metal plating layer has a thickness of 50 to 200 nm;
in the above structure, the thickness of the second metal plating layer is 600-900 nm;
in the above structure, the thickness of the PI film is 1-4 μm;
in the above structure, the thickness of the third metal plating layer is 5 to 50 nm;
in the above structure, the thickness of the fourth metal plating layer is 50 to 200 nm;
in the above structure, the thickness of the fifth metal plating layer is 600-900 nm;
in the above structure, the first metal plating layer, the second metal plating layer, the third metal plating layer, the fourth metal plating layer and the fifth metal plating layer are all copper plating layers.
The invention also provides a preparation method of the conductive film, and the improvement is that: the method comprises the following steps:
s1, coating a release agent with the thickness of 0.3-1um on the upper surface and the lower surface of the film base material. Forming a double-sided release coating;
s2, synchronously coating films on the surfaces of the double-sided release coatings by adopting vacuum coating equipment to respectively form double-sided first metal coatings of 50-200 nm;
s3, forming a 600-900nm double-sided second metal plating layer on the outer surface of the double-sided first metal plating layer synchronously through a water plating device;
s4, coating the PI material on the outer surface of the double-sided second metal plating layer by using coating composite equipment, and then performing thermocuring to synchronously form a 1-4 mu m double-sided PI film on the surface of the double-sided second metal plating layer;
s5, coating on the PI film surfaces on the two sides by adopting double-sided magnetron sputtering coating equipment to respectively form 5-50nm double-sided third metal coatings;
s6, synchronously coating the double-sided third metal coating by adopting double-sided vacuum evaporation coating equipment to form a double-sided fourth metal coating with the thickness of 50-200 nm;
s7, adopting a water plating device to perform synchronous film plating on the double-sided fourth metal plating layers to respectively form 600-900nm double-sided fifth metal plating layers;
and S8, peeling the film substrate along the space between the double-sided first metal layer to form two rolls of finished films of the conductive film.
Further, in step S1, the film substrate includes, but is not limited to, a PP film, a PE film or a PET film.
Further, in step S2, the vacuum coating device includes, but is not limited to, a vacuum evaporation coating device or a magnetron sputtering coating device.
Further, the PI material is coated in step S4 in a double-sided synchronous coating manner or coated on the other side after one-sided coating is completed.
Further, the thickness of the film substrate is 12-20 μm; the thickness of the finished film of the conductive film is 3-6 μm.
Furthermore, the double-sided first metal plating layer, the double-sided second metal plating layer, the double-sided third metal plating layer, the double-sided fourth metal plating layer and the double-sided fifth metal plating layer are copper plating layers.
Further, in the step S3 and the step S7, the water plating apparatus is an alkaline water plating device or an acidic water plating device.
Further, in the step S8, the sheet resistance of the single side of the finished film obtained after the peeling is within 20m Ω.
Further, in step S8, a peeling machine is used to peel the film substrate.
The invention also discloses a current collection and transmission material, and the improvement is that: including the finished films described above.
The invention also discloses an energy storage device, which comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, and the improvement is as follows: the cathode pole piece uses the current collector.
The invention has the beneficial effects that: the limitation on the thickness of the outer layer film substrate is relaxed; the phenomenon that the base material in the circuit in the prior art is easy to generate serial bubbles and holes in evaporation plating is avoided; the PI raw material is used for replacing the original formed film, thereby reducing the production energy consumption and the material cost and improving the excellent rate of the product to a great extent.
Drawings
Fig. 1 is a schematic cross-sectional view of a conductive film according to the present invention after forming.
FIG. 2 is a schematic cross-sectional view of a finished conductive film of the present invention.
Fig. 3 is a schematic flow chart of a method for manufacturing a conductive film according to the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
The conception, the specific structure, and the technical effects produced by the present invention will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the features, and the effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention. In addition, all the connection/connection relations referred to in the patent do not mean that the components are directly connected, but mean that a better connection structure can be formed by adding or reducing connection auxiliary components according to specific implementation conditions. All technical characteristics in the invention can be interactively combined on the premise of not conflicting with each other.
Example 1
Referring to fig. 1, the present invention discloses a conductive film, specifically, the conductive film includes a film substrate 10, a double-sided first metal plating layer 30, a double-sided second metal plating layer 40, a double-sided PI film 50, a double-sided third metal plating layer 60, a double-sided fourth metal plating layer 70, and a double-sided fifth metal plating layer 80; the double-sided first metal plating layer 20 is formed on two surfaces of the film base material 10 through vacuum coating equipment, and the double-sided second metal plating layer 40 is formed on the double-sided first metal plating layer 30 through a water plating device. Further, the PI film 50 is coated on the outer surface of the double-sided second metal coating 40 through a coating and compounding device, wherein the thickness of the double-sided PI film 50 is 1 μm, the double-sided third metal coating 60 is formed on the outer surface of the double-sided PI film 50 through a magnetron sputtering coating device, the double-sided fourth metal coating 70 is formed on the double-sided third metal coating 60 through a vacuum evaporation device, and the double-sided fifth metal coating 80 is formed on the double-sided fourth metal coating 70 through a water coating device; the thickness of the double-sided third metal plating layer 60 is 5nm, the thickness of the double-sided fourth metal plating layer 70 is 200nm, and the thickness of the double-sided fifth metal plating layer 80 is 800 nm. Referring to fig. 1, the film substrate 10 is peeled along the space between the film substrate 10 and the double-sided first metal layer after the fifth metal plating layer 80 is formed, and the thickness of two rolls of finished films formed after the film substrate 10 is peeled is 3 μm. In the above embodiments, the double-sided first metal plating layer 30, the double-sided second metal plating layer 40, the double-sided third metal plating layer 60, the double-sided fourth metal plating layer 70, and the double-sided fifth metal plating layer 80 are all copper plating layers.
As shown in fig. 3, in this embodiment, a method for preparing a conductive film is further provided, and the detailed steps of the method for preparing the conductive film are as follows:
s1, coating a release agent on the upper and lower surfaces of the film substrate 10 with a thickness of 12 μm to form a release agent layer (not shown in the drawing) with a thickness of 0.3um, wherein the film substrate 10 is a PET film.
S2, coating the surface of the 0.3-micron release agent layer by adopting vacuum coating equipment to form a double-sided first metal coating 30 with the thickness of 50nm, wherein the vacuum coating equipment is vacuum evaporation coating equipment, and the double-sided first metal coating 30 is a copper coating layer;
s3, forming 900nm double-sided second metal plating layers 40 on the outer surfaces of the double-sided first metal plating layers 30 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the double-sided second metal plating layers 40 are copper plating layers;
s4, coating a PI material on one outer surface of the double-sided second metal plating layer 30 by using coating and compounding equipment, then coating the PI material on the double-sided second metal plating layer 30 on the other surface of the film substrate, and then thermally curing the PI material to respectively form a 1-micron PI film 40;
s5, synchronously coating the surface of the double-sided PI film 50 by adopting double-sided magnetron sputtering coating equipment to form a 5nm double-sided third metal coating 60, wherein the double-sided third metal coating 60 is a copper coating layer;
s6, synchronously plating a film on the surface of the double-sided third metal plating layer 60 by adopting double-sided vacuum evaporation plating equipment to form a 200nm fourth metal plating layer 70, wherein the fourth metal plating layer 70 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 800nm fifth metal plating layer 80, wherein in the step, the water plating device is the same as the water plating device in the step S3 and is alkaline water plating equipment, and the same alkaline water plating equipment or two same alkaline water plating equipment can be adopted; similarly, the fifth metal layer is a copper plating layer; FIG. 1 is a schematic structural diagram of the double-sided fifth metal plating layer 80 after molding;
s8, peeling the film substrate 10 along the space between the double-sided first metal layer by adopting a peeling machine to form two rolls of finished films with the thickness of 3 mu m, wherein the square resistance of the single side is within 20m omega; as shown in fig. 2, which is a schematic cross-sectional view of the finished film.
In this embodiment, the thickness of the film substrate 10 is 12 μm, and in this embodiment, the thickness of the film substrate 10 can be arbitrarily selected from 12 to 20 μm based on the preparation method of the present invention, so that the limitation on the thickness of the outer film substrate 10 is relaxed. In the prior art, a process line adopting evaporation coating has the problems of bubble crossing and holes, wherein the problem of bubble crossing is that when the evaporation coating process is carried out, the deformation of a base film is deteriorated due to higher temperature of the evaporation coating process, and a series of deformations are generated in the film moving direction; the foam string affects the product goodness on the one hand and the consistency of the product on the other hand, resulting in a goodness loss of about 30% for the product. The problem of the holes is that when an evaporation coating process is carried out, due to high process temperature and small fluctuation, high-temperature metal particles are easy to break down a base film to form the holes, and the holes can cause material leakage in the surface treatment process in the post-industrial chain processing and using process, so that a great safety risk can be caused to a terminal product with a certain probability. The preparation method of the conductive film avoids the phenomenon that the base material in the circuit in the prior art is easy to generate bubbles and holes in evaporation plating; the PI raw material is used for replacing the original formed film, thereby reducing the production energy consumption and the material cost and improving the excellent rate of the product to a great extent.
In addition, the invention also discloses a current collector, which comprises the formed conductive film in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the current collector of the cathode pole piece is disclosed.
Example 2
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, in this embodiment, the detailed steps of the method are as follows:
s1, coating release agent on the upper and lower surfaces of the film substrate 10 with a thickness of 20 μm to form a release agent layer (not shown in the figure) with a thickness of 1um, wherein the film substrate 10 is a PE film.
S2, coating the surface of the release agent layer with the thickness of 1 mu m by adopting vacuum coating equipment to form a double-sided first metal coating 30 with the thickness of 200nm, wherein the vacuum coating equipment is magnetron sputtering coating equipment, and the double-sided first metal coating 30 is a copper coating layer;
s3, forming a 600nm double-sided second metal plating layer 40 on the outer surface of the double-sided first metal plating layer 30 through a water plating device, wherein the water plating device is acid water plating equipment, and the double-sided second metal plating layer 40 is a copper plating layer;
s4, using a coating and compositing device, coating a PI material on an outer surface of the double-sided second metal plating layer 30, then synchronously coating the PI material on the surface of the double-sided second metal plating layer 30, and then thermally curing the PI material to form PI films 40 of 3 μm, respectively, since the coating and compositing device is mature in the prior art, the structure and principle of the PI film are not described in detail in this embodiment;
s5, synchronously coating on the surface of the double-sided PI film 50 by adopting double-sided magnetron sputtering coating equipment to form a 50nm double-sided third metal coating 60, wherein the double-sided third metal coating 60 is a copper coating layer;
s6, synchronously plating a film on the surface of the double-sided third metal plating layer 60 by adopting double-sided evaporation plating equipment to form a 200nm double-sided fourth metal plating layer 70, wherein the double-sided fourth metal plating layer 70 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 600nm double-sided fifth metal plating layer 80, wherein in the step, the water plating device is acid water plating equipment, and the double-sided fifth metal layer is a copper plating layer; FIG. 1 is a schematic structural diagram of the double-sided fifth metal plating layer 80 after molding;
s8, peeling the film substrate 10 along the space between the double-sided first metal layer by adopting a peeling machine to form two rolls of finished films with the thickness of 5 mu m, wherein the square resistance of the single side is within 20m omega; as shown in fig. 2, which is a schematic cross-sectional view of the finished film.
Based on the preparation method, the limitation on the thickness of the outer-layer film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the circuit in the prior art is avoided; the PI raw material is used for replacing the original formed film, thereby reducing the production energy consumption and the material cost and improving the excellent rate of the product to a great extent.
In addition, the invention also discloses a current collector, which comprises the formed conductive film in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the current collector of the cathode pole piece is disclosed.
Example 3
As shown in fig. 3, the present invention discloses a method for preparing a conductive film, in this embodiment, the detailed steps of the method are as follows:
s1, coating release agents on the upper surface and the lower surface of the film base material 10 with the thickness of 18 microns to form a double-sided release agent layer with the thickness of 0.5 microns, wherein the film base material 10 is a PP film.
S2, synchronously coating the surface of the release agent layer with the thickness of 0.5 mu m by adopting vacuum coating equipment to form a double-sided first metal coating 30 with the thickness of 100nm, wherein the vacuum coating equipment is vacuum evaporation coating equipment, and the double-sided first metal coating 30 is a copper coating layer;
s3, synchronously forming 850nm double-sided second metal plating layers 40 on the outer surfaces of the double-sided first metal plating layers 30 through a water plating device, wherein the water plating device is alkaline water plating equipment, and the double-sided second metal plating layers 40 are copper plating layers;
s4, using a coating and compositing device, coating the PI material on one outer surface of the double-sided second metal plating layer 30, then coating the PI material on the double-sided second metal plating layer 30 on the other surface of the film substrate, and then performing thermal curing to form PI films 40 of 4 μm, respectively, since the coating and compositing device is mature in the prior art, the structure and principle of the coating and compositing device are not described in detail in this embodiment;
s5, synchronously coating the surface of the double-sided PI film 50 by adopting double-sided magnetron sputtering coating equipment to form a 15nm double-sided third metal coating 60, wherein the double-sided third metal coating 60 is a copper coating layer;
s6, synchronously plating a film on the surface of the double-sided third metal plating layer 60 by adopting double-sided evaporation coating equipment to form a 200nm double-sided third metal plating layer 60, wherein the double-sided third metal plating layer 80 is a copper plating layer;
s7, synchronously plating a film on the surface of the double-sided fourth metal plating layer 70 through a water plating device to form a 800nm fifth metal plating layer 80, wherein in the step, the water plating device is acid water plating equipment, and the double-sided fifth metal layer is a copper plating layer; FIG. 1 is a schematic structural diagram of the double-sided fifth metal plating layer 80 after molding;
s8, peeling the film substrate 10 along the space between the film substrate and the first metal layers on the two sides to form two rolls of finished films with the thickness of 6 mu m, wherein the square resistance of the single side is within 20m omega; as shown in fig. 2, which is a schematic cross-sectional view of the finished film.
Based on the preparation method, the limitation on the thickness of the outer-layer film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the circuit in the prior art is avoided; the PI raw material is used for replacing the original formed film, thereby reducing the production energy consumption and the material cost and improving the excellent rate of the product to a great extent.
In addition, the invention also discloses a current collector, which comprises the formed conductive film in the embodiment; the lithium battery comprises a cathode pole piece, an anode pole piece, a separation film, electrolyte and a packaging material, wherein the current collector of the cathode pole piece is disclosed.
Example 4
Referring to fig. 1, the present invention discloses a conductive film, specifically, the conductive film includes a film substrate 10, a double-sided first metal plating layer 30, a double-sided second metal plating layer 40, a double-sided PI film 50, a double-sided third metal plating layer 60, a double-sided fourth metal plating layer 70, and a double-sided fifth metal plating layer 80; the double-sided first metal plating layer 30 is formed on the surface of the double-sided release agent layer 20 through vacuum coating equipment, and the double-sided second metal plating layer 40 is formed on the double-sided first metal plating layer 30 through a water plating device, so that the double-sided first metal plating layer 30 and the double-sided second metal plating layer 40 are formed on the surface of the film substrate 10, in this embodiment, the film substrate 10 is a PET film with a thickness of 15 μm, the double-sided first metal plating layer 30 is 150nm, and the double-sided second metal plating layer 40 is 800 nm.
Further, the double-sided PI film 50 is formed by coating PI material on the outer surface of the double-sided second metal plating layer 40 through a coating composite device, wherein the thickness of the double-sided PI film 50 is 2 μm, the double-sided third metal plating layer 60 is formed on the outer surface of the PI film 50 through a magnetron sputtering coating device, and the double-sided fourth metal plating layer 70 is formed on the double-sided third metal plating layer 60 through a vacuum evaporation coating device; the thickness of the double-sided third metal plating layer 60 is 5nm, the thickness of the double-sided fourth metal plating layer 70 is 100nm, and the thickness of the double-sided fifth metal plating layer 80 is 900 nm. Referring to fig. 1 and 2, the film substrate 10 is peeled off after the double-sided fifth metal plating layer 80 is formed, and the thickness of a finished film formed after the film substrate 10 is peeled off is 4 μm. In the present embodiment, the double-sided first metal plating layer 20, the double-sided second metal plating layer 30, the double-sided third metal plating layer 60, the double-sided fourth metal plating layer 70, and the double-sided fifth metal plating layer are all copper plating layers.
In the above embodiment 4, the vacuum coating apparatus is a magnetron sputtering coating apparatus, and the water plating device is an alkaline water plating apparatus.
In the embodiment, the limitation on the thickness of the outer-layer film substrate 10 is relaxed, and the phenomenon that the substrate is easy to generate bubbles and holes in evaporation plating in the circuit in the prior art is avoided; the PI raw material is used for replacing the original formed film, thereby reducing the production energy consumption and the material cost and improving the excellent rate of the product to a great extent.
Example 5
In this embodiment, a method for preparing a conductive thin film is provided, which is completely the same as the method in embodiment 1, and therefore, the steps of the preparation method are not described in detail in this embodiment, but only the difference is that the thicknesses of the thin film substrate 10 and the respective plating layers are different, wherein, in this embodiment, the thickness of the thin film substrate 10 is 15 μm, the thickness of the double-sided first metal plating layer 20 is 200nm, the thickness of the double-sided second metal plating layer 30 is 800nm, the thickness of the PI film 40 is 3 μm, the thickness of the double-sided third metal plating layer 60 is 10nm, and the thickness of the double-sided fourth metal plating layer 70 is 200 nm. The double-sided fifth metal plating layer is 800nm, so the thickness of the finished film after molding is 5 μm.
In all the embodiments, the thickness of the PI film is controlled to be 1-4 μm, and compared with the common copper foil or other copper-plated films, the PI film has the advantages of lower resistance, higher capacity density, lighter weight and the like. The magnetron sputtering coating equipment generally comprises a vacuum cavity, an unwinding mechanism, a winding mechanism, a cooling main drum, an unwinding swing frame and a winding swing frame, wherein the unwinding mechanism, the winding mechanism and the cooling main drum are arranged in the vacuum cavity, one surface of a film substrate 10 is coated by the cooling main drum after passing through the unwinding mechanism, and then the winding mechanism is used for collecting the material so as to coat the film on the film substrate 10. The alkaline water plating device generally comprises a material discharging coil, a material receiving coil and a plurality of electroplating devices arranged between the material discharging coil and the material receiving coil, wherein each electroplating device comprises a plurality of plating baths and an anti-oxidation bath, and further comprises structures such as a transition roller, a flattening roller, a tension roller and the like, and the purpose is to enable the film base material 10 to sequentially pass through the plurality of plating baths to form a metal coating meeting the requirements on the surface of the film base material 10. In addition, since the structures of the vacuum evaporation plating and the acidic water plating apparatus are well known in the art, the above-described embodiments do not describe the structures in detail.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (20)
1. A conductive film, characterized by: the coating comprises a double-sided first metal coating, a double-sided second metal coating, a double-sided PI film, a double-sided third metal coating, a double-sided fourth metal coating and a double-sided fifth metal coating;
the double-sided first metal coating is formed on the surface of the film substrate through vacuum coating equipment, and the double-sided second metal coating is formed on the double-sided first metal coating through a water plating device;
the PI film is compounded on the outer surface of the double-sided second metal coating through coating compounding equipment, and the double-sided third metal coating is formed on the outer surface of the double-sided PI film through magnetron sputtering coating equipment;
the double-sided fourth metal coating is formed on the double-sided third metal coating through a vacuum evaporation device, and the double-sided fifth metal coating is formed on the outer surface of the double-sided fourth metal coating through water plating equipment;
the film substrate is stripped between the formed double-sided fifth metal coating and the double-sided first metal layer, and two rolls of conductive film finished products are formed after the film substrate is stripped.
2. The conductive film of claim 1, wherein: the film substrate includes but is not limited to a PP film, a PE film or a PET film.
3. The conductive film of claim 1, wherein: the thickness of the film base material is 12-20 μm; the thickness of the finished film of the conductive film is 3-6 μm.
4. The conductive film of claim 1, wherein: the thickness of the first metal plating layer is 50-200 nm.
5. The conductive film of claim 1, wherein: the thickness of the second metal plating layer is 600-900 nm.
6. The conductive film of claim 1, wherein: the thickness of the PI film is 1-4 mu m.
7. The conductive film of claim 1, wherein: the thickness of the third metal plating layer is 5-50 nm.
8. The conductive film of claim 1, wherein: the thickness of the fourth metal plating layer is 50-200 nm.
9. The conductive film of claim 1, wherein: the thickness of the fifth metal plating layer is 600-900 nm.
10. The conductive film of claim 1, wherein: the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer are all copper plating layers.
11. A method for preparing a conductive film, comprising the steps of:
s1, coating a release agent with the thickness of 0.3-1um on the upper surface and the lower surface of the film base material to form a double-sided release coating;
s2, synchronously coating films on the surfaces of the double-sided release coatings by adopting vacuum coating equipment to respectively form double-sided first metal coatings with the thickness of 50-200 nm;
s3, forming a double-sided second metal plating layer with the thickness of 600-900nm on the outer surface of the double-sided first metal plating layer synchronously through a water plating device;
s4, coating the PI material on the outer surface of the double-sided second metal plating layer by using coating composite equipment, and then performing thermocuring to synchronously form a 1-4 mu m double-sided PI film on the surface of the double-sided second metal plating layer;
s5, synchronously coating films on the PI film surfaces on the two sides by adopting double-sided magnetron sputtering coating equipment to form double-sided third metal coating layers;
s6, synchronously coating the double-sided third metal coating by adopting double-sided vacuum evaporation coating equipment to form a double-sided fourth metal coating with the thickness of 50-200 nm;
s7, adopting a water plating device to perform synchronous film plating on the double-sided fourth metal plating layers to respectively form 600-900nm thick double-sided fifth metal plating layers;
and S8, peeling the film substrate along the space between the double-sided first metal layer to form two rolls of finished films of the conductive film.
12. The method for producing a conductive film according to claim 11, characterized in that: in step S1, the film substrate includes, but is not limited to, a PP film, a PE film or a PET film.
13. The method for producing a conductive film according to claim 11, characterized in that: in the step S2, the vacuum coating device includes, but is not limited to, a vacuum evaporation coating device or a magnetron sputtering coating device.
14. The method for producing a conductive film according to claim 11 or 12, characterized in that: the thickness of the film base material is 12-20 μm; the thickness of the finished film of the conductive film is 3-6 μm.
15. The method for producing a conductive film according to claim 11, characterized in that: the coating mode of the PI material in the step S4 is double-sided synchronous coating or coating the other side after single-sided coating is finished.
16. The method for producing a conductive film according to claim 11, characterized in that: the double-sided first metal plating layer, the double-sided second metal plating layer, the double-sided third metal plating layer, the double-sided fourth metal plating layer and the double-sided fifth metal plating layer are copper plating layers.
17. The method for producing a conductive film according to claim 11, wherein: in the step S3 and the step S7, the water plating apparatus is an alkaline water plating facility or an acidic water plating facility.
18. The method for producing a conductive film according to claim 11, wherein: in step S8, a peeling machine is used to peel the film substrate.
19. An electric current collection and transport material, comprising: comprising the conductive film of any one of claims 1-18.
20. The utility model provides an energy storage device, includes negative pole piece, positive pole piece, barrier film, electrolyte and packaging material, its characterized in that: the cathode pole piece using the current sink-transporting material of claim 19.
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| CN202010836244.9A CN114075653B (en) | 2020-08-22 | 2020-08-22 | Conductive film, method for producing conductive film, current collecting and transmitting material, and energy storage device |
| PCT/CN2020/123847 WO2022041447A1 (en) | 2020-08-22 | 2020-10-27 | Conductive thin film, method for manufacturing conductive thin film, current collecting and transmitting material, and energy storage apparatus |
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