CN113934115B - Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine - Google Patents
Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine Download PDFInfo
- Publication number
- CN113934115B CN113934115B CN202111235304.2A CN202111235304A CN113934115B CN 113934115 B CN113934115 B CN 113934115B CN 202111235304 A CN202111235304 A CN 202111235304A CN 113934115 B CN113934115 B CN 113934115B
- Authority
- CN
- China
- Prior art keywords
- data
- data unit
- target
- characteristic
- photoetching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001259 photo etching Methods 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000012545 processing Methods 0.000 claims abstract description 55
- 238000001459 lithography Methods 0.000 claims description 98
- 238000004590 computer program Methods 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 12
- 238000004422 calculation algorithm Methods 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 101100201843 Cyprinus carpio rsph1 gene Proteins 0.000 description 2
- 101100328516 Mus musculus Cnpy2 gene Proteins 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
Abstract
The invention discloses a method for controlling a direct-writing type photoetching machine and the direct-writing type photoetching machine, wherein the direct-writing type photoetching machine comprises a spatial light modulation device, and the method comprises the following steps: acquiring an original photoetching pattern; obtaining a deformed photoetching pattern for the exposure and extracting a second characteristic pattern data unit; inquiring a pre-stored data warehouse; determining that the same type of target deformed photoetching patterns exist in a data warehouse; comparing the second characteristic graphic data unit with a third characteristic graphic data unit in the data sequence; determining that a target third characteristic graphic data unit which can be replaced with the second characteristic graphic data unit exists, and converting the data required by the corresponding spatial light modulation device into spatial light modulation device target data corresponding to the second characteristic graphic data unit; and controlling a spatial light modulation device of the direct-writing type photoetching machine. The method for controlling the direct-writing type photoetching machine has short processing time, can realize the processing of data through software, and improves the productivity of the direct-writing type photoetching machine.
Description
Technical Field
The invention relates to the technical field of data processing, in particular to a method for controlling a direct-writing type photoetching machine and the direct-writing type photoetching machine.
Background
Direct-write lithography is a technique in which a pattern having features is printed on the surface of a photosensitive material, such as a photoresist or film, and maskless lithography generally uses a digital micromirror system to generate a pattern, and an image is projected onto a photosensitive substrate at a magnification by an optical projection element, resulting in the pattern of features. In the fields of mask and wafer level packaging of semiconductors, in the processes of packaging carrier boards, carrier-like boards, HDI (High Density Interconnector, high density interconnect), and mSAP (ultra thin copper skin analog SAP method) in the PCB (Printed Circuit Board ) industry, the production materials have the characteristics of being dense, small in line width and line spacing, repeated, and the like, so for a direct writing lithography machine, a series of processes, such as contouring, strip cutting, polygonal decomposition, data recombination, filling, and the like, need to be performed on each vector data to Process the vector data into grating data required by a spatial light modulation device. In addition, in the production process, the requirements on the position accuracy, the position accuracy and the like are very high, so that after each position alignment, the layer data are required to be processed by the position parameters of different position alignment models, in each processing process, the target pattern is ensured to be lossless, or the accuracy of a single grid of a direct-writing photoetching machine is ensured to be lower, and therefore, the layer data are required to be repeatedly processed by data processing each time.
In the related art, in the process of repeatedly processing data, the processing time is long, the processing speed is easy to be slow, and with the requirements of finer and finer field and high-end plate making in the direct-writing lithography, the more complicated and finer plate making lines are, the more pattern units are distributed in a unit area, so that the data processed each time cannot be effectively utilized, and the capacity requirement of the direct-writing lithography machine cannot be met by means of hardware acceleration alone.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, one of the purposes of the present invention is to provide a method for controlling a direct-writing type photoetching machine, which can realize the repeated use of the data required by the processed spatial light modulation device, has short processing time, can realize the processing of the data through software, and improves the productivity of the direct-writing type photoetching machine.
The second object of the present invention is to provide a direct-writing type lithography machine.
The third object of the present invention is to provide a direct-writing type lithography machine.
To achieve the above object, an embodiment of a first aspect of the present invention provides a method of controlling a direct-write lithography machine, the direct-write lithography machine including a spatial light modulation device, the method comprising: acquiring an original photoetching pattern, and extracting a first characteristic pattern data unit in the original photoetching pattern; performing deformation processing on the original photoetching graph according to exposure alignment information to obtain a deformed photoetching graph for the exposure, and extracting second characteristic graph data units corresponding to the first characteristic graph data units from the deformed photoetching graph for the exposure; querying a pre-stored data warehouse, wherein the data warehouse comprises data sequences of deformed photoetching patterns of different types, and each data sequence comprises a third characteristic pattern data unit in the deformed photoetching patterns and data required by a spatial light modulation device corresponding to the third characteristic pattern data unit; determining that a target deformed photoetching pattern which is the same as the deformed photoetching pattern used for the exposure exists in the data warehouse; acquiring a data sequence of the target deformed photoetching graph, and comparing the second characteristic graph data unit with a third characteristic graph data unit in the data sequence of the target deformed photoetching graph; determining that a target third characteristic graph data unit which can be mutually replaced with the second characteristic graph data unit exists in the data sequence of the photoetching graph after the target is deformed, and converting the data required by the spatial light modulation device corresponding to the target third characteristic graph data unit into the spatial light modulation device target data corresponding to the second characteristic graph data unit; and controlling the spatial light modulation device of the direct-writing photoetching machine according to the target data of the spatial light modulation device.
According to the method for controlling the direct-writing type photoetching machine, when the direct-writing type photoetching machine directly writes an original photoetching pattern on an imaging surface coated with a photosensitive material, after the deformed photoetching pattern is obtained, a pre-stored data warehouse is firstly inquired, when the target deformed photoetching pattern which is the same as the deformed photoetching pattern used for the exposure exists in the data warehouse, and when the target third characteristic pattern data unit which can be mutually replaced with the second characteristic pattern data unit exists in a data sequence of the target deformed photoetching pattern is determined, the data required by a spatial light modulation device corresponding to the target third characteristic pattern data unit is directly converted into the spatial light modulation device target data corresponding to the second characteristic pattern data unit. Therefore, the repeated use of the data required by the processed spatial light modulator is realized, the processing time of the deformed photoetching graph is saved, the data processing speed is improved, the productivity of the direct-writing photoetching machine is further improved, the whole data processing process is realized through software, and the dependence on hardware resources of a processing server can be reduced.
In some embodiments of the present invention, determining that there is a target post-deformation lithographic pattern in the data repository that is the same type as the post-deformation lithographic pattern for the present exposure includes: obtaining the comparison parameters of the deformed photoetching patterns for the exposure, wherein the comparison parameters comprise at least one of the number of pattern vertexes, the gray scale image orders, the pattern formats and the gray scale image pixel values; determining that the deformed photoetching patterns with the same comparison parameters as the deformed photoetching patterns for the exposure exist in the data warehouse; and taking the deformed photoetching patterns in the data warehouse, which are the same as the comparison parameters of the deformed photoetching patterns used for the exposure, as the target deformed photoetching patterns.
In some embodiments of the present invention, comparing the second feature pattern data unit with a third feature pattern data unit in the data sequence of the target deformed lithographic pattern comprises: calculating a graph eigenvalue of a third characteristic graph data unit and the second characteristic graph data unit in the data sequence of the target deformed photoetching graph, and determining that the third characteristic graph data unit is equal to the second characteristic graph data unit if the graph eigenvalue is smaller than or equal to an equal threshold value; obtaining a graph eigenvalue of a third characteristic graph data unit and the second characteristic graph data unit in a data sequence of the target deformed photoetching graph, and if the graph eigenvalue is smaller than a similarity threshold, determining that the third characteristic graph data unit is similar to the second characteristic graph data unit, wherein the similarity threshold is larger than the equal threshold; and if the difference value is larger than the similarity threshold value, determining that a third characteristic graphic data unit which can be mutually replaced with the second characteristic graphic data unit does not exist in the data sequence of the target deformed photoetching graphic.
In some embodiments of the present invention, determining that there is a target third feature pattern data unit in the data sequence of the target deformed lithographic pattern that is interchangeable with the second feature pattern data unit, and converting data required by the digital micromirror device corresponding to the target third feature pattern data unit into digital micromirror device target data corresponding to the second feature pattern data unit includes: if the third characteristic graphic data unit is equal to the second characteristic graphic data unit, taking the third characteristic graphic data unit which is equal to the second characteristic graphic data unit as the target third characteristic graphic data unit, and taking the data required by the digital micro-mirror device corresponding to the target third characteristic graphic data unit as the target data of the digital micro-mirror device; and if the third characteristic graphic data unit is similar to the second characteristic graphic data unit, taking the third characteristic graphic data unit similar to the second characteristic graphic data unit as the target third characteristic graphic data unit, and converting the data required by the digital micromirror device corresponding to the target third characteristic graphic data unit to obtain the target data of the digital micromirror device.
In some embodiments of the present invention, converting the data required by the digital micromirror device corresponding to the target third feature pattern data unit includes: and performing at least one of rotation, expansion, translation, rounding and sharpening on the data required by the digital micro-mirror device corresponding to the target third characteristic graph data unit.
In some embodiments of the invention, after determining that there is no third feature pattern data unit in the data sequence of the target post-deformation lithographic pattern that is interchangeable with the second feature pattern data unit, the method further comprises: performing data processing on the second characteristic graph data unit according to a conventional flow to obtain spatial light modulation device target data corresponding to the second characteristic graph data unit; and storing the second characteristic graph data unit and the target data of the spatial light modulation device corresponding to the second characteristic graph data unit in a data sequence of the photoetching graph after the target is deformed.
In some embodiments of the invention, the data warehouse comprises a plurality of data sub-warehouses, each of which stores data sequences of deformed lithographic patterns of the same type or of different types; the method further comprises the steps of: recording a data sequence of the deformed photoetching graph or accumulated use data of the data sub-warehouse, wherein the accumulated use data comprises at least one of accumulated use frequency, accumulated use time and accumulated integration; and replacing the data sequence or the data sub-warehouse of the deformed photoetching graph in the data warehouse according to the LRU algorithm based on the accumulated use data.
In some embodiments of the present invention, the data warehouse is a cache pool or a memory pool, and the data stored by the data warehouse includes at least one of a numerical value, a graph, a digital set, and an image.
In order to achieve the above object, a direct-write lithography machine according to a second aspect of the present invention includes: a processor and a memory communicatively coupled to the processor; wherein the memory stores a data warehouse and a computer program executable by the processor, the processor implementing the method of controlling a direct write lithography machine as described in any one of the above when executing the computer program.
The direct-writing type photoetching machine provided by the embodiment of the invention comprises a processor and a memory, wherein a data warehouse and a computer program which can be executed by the processor are stored in the memory, when the computer program runs, the operating parameters of each structure in the direct-writing type photoetching machine can be obtained for analysis and calculation, and the processor can control and read the data in the data warehouse to process the deformed photoetching graph. Therefore, the method for controlling the direct-write lithography machine in the above embodiment is realized, and the method can be directly applied to the existing direct-write lithography machine, can repeatedly use the data required by the processed spatial light modulation device during batch production of the same production material number, accelerates the direct-write lithography data processing, can further improve the productivity of the direct-write lithography machine 100, realizes the whole data processing process through software, and can also reduce the dependence on hardware resources of a processing server.
In order to achieve the above object, a direct-write lithography machine according to a second aspect of the present invention includes: a light source, a spatial light modulation device, and an imaging system; and the controller is connected with the spatial light modulation device and is used for controlling the spatial light modulation device according to the method for controlling the direct-writing type photoetching machine.
According to the direct-writing type photoetching machine provided by the embodiment of the invention, the controller is used for obtaining the data required by the spatial light modulation device by executing the method for controlling the direct-writing type photoetching machine of any one of the embodiments, and controlling the spatial light modulation device according to the data required by the spatial light modulation device, so that the target image value is written on the surface of the substrate coated with the photosensitive material. By adopting the method for controlling the direct-writing photoetching machine according to any one of the embodiments, the method can be realized by software without repeatedly processing the same or similar characteristic graph data units, thereby simplifying the process of acquiring the data required by the spatial light modulation device by the controller, shortening the processing time, improving the processing speed of the data and effectively utilizing the processed data each time.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a method of controlling a direct write lithography machine according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a process of creating a data warehouse according to one embodiment of the invention;
FIG. 3 is a flow chart of a method of controlling a direct write lithography machine according to another embodiment of the present invention;
FIG. 4 is a flow chart of a method of controlling a direct write lithography machine according to yet another embodiment of the present invention;
FIG. 5 is a block diagram of a direct write lithography machine according to one embodiment of the invention;
FIG. 6 is a schematic diagram of an original lithographic patterning process according to one embodiment of the invention;
FIG. 7 is a block diagram of a direct write lithography machine according to another embodiment of the present invention.
Reference numerals:
a direct-write lithography machine 100;
a processor 10, a memory 20, a data warehouse 21;
a light source 1, a spatial light modulation device 2, an imaging system 3, and a controller 4.
Detailed Description
Embodiments of the present invention will be described in detail below, by way of example with reference to the accompanying drawings.
A method of controlling a direct write lithography machine according to an embodiment of the present invention is described below with reference to fig. 1-4.
In some embodiments of the invention, the direct write lithography machine includes a spatial light modulation device, wherein the spatial light modulation device may employ a DMD (Digital Micromirror Device ) device or LCLV (Liquid Crystal Light Valve, liquid crystal light valve) or other suitable digital light spatial light modulator for effecting modulation of light.
Referring to fig. 1, a flowchart of a method for controlling a direct-write lithography machine according to an embodiment of the present invention includes at least steps S1 to S7, which are specifically described below.
S1, acquiring an original photoetching pattern, and extracting a first characteristic pattern data unit in the original photoetching pattern.
The original photoetching pattern is needed to be directly written into the photoetching pattern of the imaging surface coated with the photosensitive material, and the original photoetching pattern can be composed of various pattern data units. For example, the original lithographic pattern is denoted by G0, the pattern data units in the original lithographic pattern G0 are extracted and collectively referred to as first feature pattern data units, which are denoted as P0, P1, P2, P3 … Pi, respectively, where i is a natural number greater than 0.
S2, performing deformation processing on the original photoetching pattern according to the exposure alignment information to obtain a deformed photoetching pattern used for the exposure, and extracting second characteristic pattern data units corresponding to the first characteristic pattern data units in the deformed photoetching pattern used for the exposure.
In writing an original lithographic pattern directly onto an imaging surface coated with a photosensitive material, it is necessary to subject the original lithographic pattern to a para-exposure process. For example, after the original lithography pattern G0 is subjected to the G-th alignment exposure according to the exposure alignment information, the obtained G-th post-exposure deformed lithography pattern is recorded as Gg, the post-deformation lithography pattern Gg also contains various pattern data units, the pattern data units in the post-deformation lithography pattern Gg are extracted and collectively referred to as second feature pattern data units, wherein the second feature pattern data units correspond to the first feature pattern data units, and the second feature pattern data units are respectively represented as N0, N1, N2 … Nk, and k is a natural number greater than 0.
S3, inquiring a pre-stored data warehouse, wherein the data warehouse comprises data sequences of different types of deformed photoetching patterns, and each data sequence comprises a third characteristic pattern data unit in the deformed photoetching patterns and data required by a spatial light modulation device corresponding to the third characteristic pattern data unit.
The data warehouse is a cache pool or a memory pool, and the data stored in the data warehouse comprises at least one of numerical values, graphics, digital sets and images.
The process of creating a data warehouse may be described with reference to fig. 2, and fig. 2 is a schematic diagram of a process of creating a data warehouse according to an embodiment of the present invention, specifically, when creating a data warehouse, a large number of original lithography patterns may be collected, and the original lithography patterns may be subjected to deformation processing according to exposure alignment information to obtain deformed lithography patterns used after exposure, and second feature pattern data units in the deformed lithography patterns may be obtained, and after the second feature pattern data units are subjected to data processing according to a conventional flow, spatial light modulation device target data corresponding to the second feature pattern data units may be obtained, where the spatial light modulation device target data may be a pattern, a value, an image, or a digital set.
When the graphic data unit is subjected to data processing according to a conventional flow, the graphic data unit is generally subjected to various processes such as contouring, strip cutting, polygonal decomposition, data recombination or filling, and finally the target data of the spatial light modulation device is obtained, and the controller is used for adaptively adjusting the state of the digital micromirror device in the spatial light modulation device according to the obtained target data of the spatial light modulation device. For example, for a direct-writing type photoetching machine, when the spatial light modulation device is a DMD device, two-dimensional bit data of M rows and N columns of a frame can be given according to the target data of the spatial light modulation device so as to independently control each digital micro-mirror device in the DMD device, one-time refreshing of the digital micro-mirror device in the DMD device can be completed, and display of images of different frames can be completed by loading two-dimensional data of different frames, so that direct writing of an original photoetching pattern on an imaging surface coated with photosensitive materials is realized.
Further, the second characteristic graph data unit and the spatial light modulation device target data corresponding to the second characteristic graph data unit are stored in a data warehouse and recorded as a third characteristic graph data unit, and a plurality of groups of third characteristic graph data units of similar types and the spatial light modulation device target data corresponding to the third characteristic graph data units form a data sequence. Specifically, when the original lithography pattern G0 is directly written, first, the first feature pattern data units P0, P1, P2, P3 … Pi in the original lithography pattern G0 are extracted, and the 1 st alignment exposure is performed on the original lithography pattern G0, so as to obtain a deformed lithography pattern G1, where the deformed lithography pattern G1 may be obtained by directly writing the original lithography pattern G0 through deformation, or may be directly equal. The third feature pattern data unit to be stored in the data warehouse is further extracted and denoted as M0, M1, M2 … Mj, and the data required by the spatial light modulation device corresponding to the third feature pattern data unit is further denoted as T0, T1, T2 … Tj, wherein j is a natural number greater than 0. The third feature pattern data unit Mj may be obtained by deforming the first feature pattern data unit Pi, or the third feature pattern data unit Mj may be a part of the first feature pattern data unit Pi.
Still further, the data warehouse may also include a plurality of data sub-warehouses, e.g., denoted as D0, D1, D2 … Db, each storing a data sequence of the same type or different types of post-deformation lithographic patterns, where b is a natural number greater than 0. The data sequences of the deformed photoetching patterns of the same type are stored in the same or different data sub-warehouses, for example, the data sequences are marked as Mt0, mt1 and Mt2 …, and the target data of the spatial light modulation devices corresponding to the third characteristic pattern data units are marked as Tt0, tt1 and Tt2 …, wherein 0 is less than or equal to s is less than or equal to b, and 0 is less than or equal to t is less than or equal to j.
In an embodiment, when a product such as a PCB board is repeatedly mass-produced, the deformed data obtained after reading and each alignment is similar to the original layer data for the graphic data of the same material number. By establishing a data warehouse, a large number of characteristic pattern data units in the deformed photoetching patterns after exposure of the original photoetching patterns are extracted in advance and stored in the data warehouse in advance. In the actual production process, when the second characteristic graph data unit needs to be processed, the data warehouse is searched first to perform characteristic matching on the deformed photoetching graph exposed at this time and the pre-stored deformed photoetching graph, that is, the second characteristic graph data unit does not need to be processed according to the conventional flow first to obtain the spatial light modulation device target data corresponding to the second characteristic graph data unit. In addition, when sample screening or feature matching is performed, the data sub-warehouse with the least and optimal data storage and the data sequence of the deformed photoetching graph can be preferentially searched, so that the time can be saved, and the processing speed of the data can be improved.
S4, determining that the target deformed photoetching patterns which are the same as the deformed photoetching patterns used for the exposure exist in the data warehouse.
Specifically, a comparison parameter of the deformed lithography graph for the exposure can be obtained first, wherein the comparison parameter includes at least one of a graph vertex number, a gray scale image order, a graph format and a gray scale image pixel value. And searching the deformed photoetching patterns which are the same as at least one of the number of the pattern vertexes, the gray scale image orders, the pattern formats or the gray scale image pixel values of the deformed photoetching patterns exposed at the time in a data warehouse. And determining that the deformed photoetching patterns with the same comparison parameters as those of the deformed photoetching patterns for the exposure exist in the data warehouse, and taking the deformed photoetching patterns as target deformed photoetching patterns.
S5, acquiring a data sequence of the target deformed photoetching pattern, and comparing the second characteristic pattern data unit with a third characteristic pattern data unit in the data sequence of the target deformed photoetching pattern.
The relationship between the second feature graphic data unit and the third feature graphic data unit may be established, for example, a deduction formula may be set, the second feature graphic data unit may be deduced according to the set deduction formula, or may be converted by a variety of formulas, the second feature graphic data unit may be converted according to a variety of formulas, or the two graphic data units may be compared according to other reasonable judging methods, such as an equality or similarity method. For example, the data sequence of the target deformed lithographic pattern, which is the same as the deformed lithographic pattern used for the exposure, in the data warehouse may be denoted as Mt, and when the second feature pattern data unit Nk is compared with a plurality of third feature pattern data units in the data sequence Mt, it may be further determined that the third feature pattern data unit is matched with, e.g. equal to or similar to, the second feature pattern data unit Nk according to the comparison result, or it may be determined that there is no third feature pattern data unit in the data sequence of the target deformed lithographic pattern, which is interchangeable with the second feature pattern data unit Nk.
S6, determining that a target third characteristic graph data unit which can be mutually replaced with the second characteristic graph data unit exists in the data sequence of the photoetching graph after the target is deformed, and converting the data required by the spatial light modulation device corresponding to the target third characteristic graph data unit into the spatial light modulation device target data corresponding to the second characteristic graph data unit.
Specifically, when the two feature graphic data units are similar or equal according to the comparison result, determining that a target third feature graphic data unit which can be mutually replaced with the second feature graphic data unit exists in the data sequence.
For example, when it is determined that the third feature pattern data unit Mt1 in the feature data sequence matches the second feature pattern data unit Nk, data required for the spatial light modulation device corresponding to the target third feature pattern data unit Mt1 may be directly denoted as Tt1 as the spatial light modulation device target data corresponding to the second feature pattern data unit. Therefore, the data required by the processed spatial light modulator can be reused, the processing time of the identical or similar deformed photoetching patterns is saved, and the data processing speed is improved.
S7, controlling the spatial light modulation device of the direct-writing photoetching machine according to the target data of the spatial light modulation device.
Specifically, the controller can control the spatial light modulation device according to the target data of the spatial light modulation device, for example, control the angles of the reflectors in the spatial light modulation device to adaptively adjust the state of the spatial light modulation device, so that the spatial light modulation device can reflect the light carrying the target image information, and the writing of the target image value on the surface of the substrate coated with the photosensitive material is realized.
According to the method for controlling the direct-writing type photoetching machine, when the direct-writing type photoetching machine directly writes an original photoetching pattern on an imaging surface coated with a photosensitive material, after the deformed photoetching pattern is obtained, a pre-stored data warehouse is firstly inquired, when the target deformed photoetching pattern which is the same as the deformed photoetching pattern used for the exposure exists in the data warehouse, and when the target third characteristic pattern data unit which can be mutually replaced with the second characteristic pattern data unit exists in a data sequence of the target deformed photoetching pattern is determined, the data required by a spatial light modulation device corresponding to the target third characteristic pattern data unit is directly converted into the spatial light modulation device target data corresponding to the second characteristic pattern data unit. Therefore, the repeated use of the data required by the processed spatial light modulator is realized, the processing time of the deformed photoetching graph is saved, the data processing speed is improved, the productivity of the direct-writing photoetching machine is further improved, the whole data processing process is realized through software, and the dependence on the hardware resource of a processing server is also reduced.
In some embodiments of the present invention, as shown in fig. 3, a flowchart of a method for controlling a direct-write lithography machine according to another embodiment of the present invention is shown, wherein the second feature pattern data unit is compared with a third feature pattern data unit in a data sequence of a target deformed lithography pattern, i.e. the step S5 above includes the steps S51-S53, which are specifically as follows.
S51, calculating the graph eigenvalue difference value of the third characteristic graph data unit and the second characteristic graph data unit in the data sequence of the photoetching graph after the target deformation, and determining that the third characteristic graph data unit is equal to the second characteristic graph data unit if the graph eigenvalue difference value is smaller than or equal to the equal threshold value.
Specifically, a relationship may be established between the second feature graphic data unit and the third feature graphic data unit, for example, a deduction formula is set, the second feature graphic data unit is deduced according to the set deduction formula, a graphic eigenvalue difference value of the second feature graphic data unit and the third feature graphic data unit is calculated, and the graphic eigenvalue difference value is compared with an equality threshold, where the equality threshold is very small, for example, a value greater than 0 or close to 0 may be set for the equality threshold, and when the graphic eigenvalue difference value is determined to be less than or equal to the equality threshold, it is determined that the second feature graphic data unit is very close to or completely equal to the third feature graphic data unit, and at this time, it may be determined that the second feature graphic data unit is equal to the third feature graphic data unit, and it may be determined that the third feature graphic data unit is obtained by translating or rotating the second feature graphic data unit.
Further, in other embodiments, when it is determined that the target third feature graphic data unit, which is interchangeable with the second feature graphic data unit, exists in the data sequence of the lithographic graphic after the target deformation, the data required by the digital micromirror device corresponding to the target third feature graphic data unit is converted into the target data of the digital micromirror device corresponding to the second feature graphic data unit, if the third feature graphic data unit is equal to the second feature graphic data unit, the third feature graphic data unit equal to the second feature graphic data unit is used as the target third feature graphic data unit, and the data required by the digital micromirror device corresponding to the target third feature graphic data unit is used as the target data of the digital micromirror device.
For example, the second feature pattern data unit is denoted as Nk, and the data sequence of the target deformed lithographic pattern is denoted as Mt, and if a third feature pattern data unit similar to or equal to the second feature pattern data unit Nk exists in the data sequence Mt of the target deformed lithographic pattern and denoted as Mt1, the spatial light modulation device target data corresponding to the third feature pattern data unit Mt1 is denoted as Tt1 as a result of processing the second feature pattern data unit Nk. The spatial light modulation device target data Tt1, that is, data required by the digital micromirror device, can be understood as angle data of each mirror in the spatial light modulation device that the controller needs to adjust, and when the controller adjusts the angles of each mirror in the spatial light modulation device to the target angle according to the data required by the digital micromirror device, the spatial light modulation device 2 reflects light carrying target image information, so that the target image can be directly written on the surface of the substrate coated with the photosensitive material.
S52, obtaining the graph eigenvalue difference value of the third characteristic graph data unit and the second characteristic graph data unit in the data sequence of the photoetching graph after the target deformation, and determining that the third characteristic graph data unit is similar to the second characteristic graph data unit if the graph eigenvalue difference value is smaller than a similarity threshold value.
In an embodiment, it is determined that a second feature pattern data unit and a third feature pattern data unit have a pattern eigenvalue, and if the pattern eigenvalue is greater than an equal threshold, it is determined that the second feature pattern data unit and the third feature pattern data unit are not equal, and the pattern eigenvalue is compared with a similarity threshold, wherein the similarity threshold is greater than the equal threshold. If the difference value is smaller than the similarity threshold, the second feature graphic data unit and the third feature graphic data unit are not equal, but the second feature graphic data unit is only partially or slightly different from the third feature graphic data unit, and the second feature graphic data unit and the third feature graphic data unit can be considered to be similar. For example, the similarity threshold may be set to 100nm, and when the pattern eigenvalue is less than 100nm, then the second feature pattern data unit is determined to be similar to the third feature pattern data unit.
Further, when determining that a target third characteristic graphic data unit which can be mutually replaced with the second characteristic graphic data unit exists in the data sequence of the photoetching graphic after the target deformation, converting the data required by the digital micro-mirror device corresponding to the target third characteristic graphic data unit into the target data of the digital micro-mirror device corresponding to the second characteristic graphic data unit, if the third characteristic graphic data unit is similar to the second characteristic graphic data unit, taking the third characteristic graphic data unit similar to the second characteristic graphic data unit as the target third characteristic graphic data unit, and converting the data required by the digital micro-mirror device corresponding to the target third characteristic graphic data unit to obtain the target data of the digital micro-mirror device.
When the third feature graphic data unit is similar to the second feature graphic data unit, the third feature graphic data unit indicates that a certain difference exists between the local or fine parts of the second feature graphic data unit, but the difference is small. Therefore, at least one of rotation, expansion, translation, rounding, sharpening and the like is required to be performed on the data required by the digital micromirror device corresponding to the third feature image data unit, but the processing mode is not limited to one or more of rotation, expansion, translation, rounding and sharpening, so as to obtain the target data of the digital micromirror device corresponding to the second feature image data unit, thereby meeting the requirements of position precision, alignment precision and the like of the target image written directly on the surface of the substrate coated with the photosensitive material.
For the fields of mask plates of semiconductors, wafer level packaging and the like, especially for the manufacturing process requirements of packaging carrier plates, carrier-like plates, HDI, mSAP and the like in the PCB industry, even under the conditions that production material numbers are dense, line width line spacing is small, and requirements on position precision, alignment precision and the like are very high, target images on the surface of a substrate coated with a photosensitive material can be guaranteed to be damaged according to the requirements on precision and the like of direct writing lithography patterns.
And S53, if the difference value is larger than the similarity threshold value, determining that a third characteristic pattern data unit which can be mutually replaced with the second characteristic pattern data unit does not exist in the data sequence of the target deformed photoetching pattern.
If the graph eigenvalue difference value of the second feature graph data unit and the third feature graph data unit is larger than the similarity threshold value, the difference between the second feature graph data unit and the third feature graph data unit is larger, and the second feature graph data unit and the third feature graph data unit are neither similar nor equal, so that it is determined that the third feature graph data unit which can be mutually replaced with the second feature graph data unit does not exist in the data sequence of the photoetching graph after the target deformation.
Further, after determining that a third characteristic graphic data unit which can be replaced with the second characteristic graphic data unit does not exist in the data sequence of the photoetching graphic after the target deformation, performing data processing on the second characteristic graphic data unit according to a conventional flow to obtain the target data of the spatial light modulation device corresponding to the second characteristic graphic data unit.
Specifically, when a data warehouse is established, a third characteristic graph data unit which can be mutually replaced with the second characteristic graph data unit is not pre-stored, namely, the direct-writing photoetching machine carries out data processing on the data unit for the first time, namely, the graph data unit is subjected to such processing as contouring, strip cutting, polygonal decomposition, data recombination or filling according to a conventional flow, finally, the target data of the spatial light modulation device is obtained, and the controller further adaptively adjusts the element states in the spatial light modulation device according to the obtained target data of the spatial light modulation device.
Further, the second characteristic graph data unit and the target data of the spatial light modulation device corresponding to the second characteristic graph data unit are stored in a data sequence of the photoetching graph after the target is deformed. That is, the direct-writing type photoetching machine combines with the machine learning model, so that the direct-writing type photoetching machine has the function of learning characteristic data, can ensure continuous iteration of data in a data warehouse, and can ensure that a processing result of real-time data can be obtained quickly when each data processing is performed, thereby improving the data processing capacity of the direct-writing type photoetching machine and improving the productivity.
According to the method for controlling the direct-writing type photoetching machine, the second characteristic graphic data unit is compared with the third characteristic graphic data unit in the data sequence of the photoetching graphic after the target deformation, so that the existence or the nonexistence of the third characteristic graphic data unit which can be mutually replaced with the second characteristic graphic data unit in the data sequence of the photoetching graphic after the target deformation is judged. If the data exists, the data required by the digital micro-mirror device corresponding to the target third characteristic graph data unit can be further converted into the target data of the digital micro-mirror device corresponding to the second characteristic graph data unit, so that the data required by the third characteristic graph data unit of the same kind and the spatial light modulation device corresponding to the third characteristic graph data unit in the data sequence stored in the data warehouse can be reduced, excessive query time consumption caused by excessive stored data types is avoided, and the data storage space is reasonably arranged.
In some embodiments of the invention, the data warehouse includes a plurality of data sub-warehouses, each data sub-warehouse storing data sequences of the same type or different types of deformed lithographic patterns. As shown in fig. 4, in order to illustrate a flowchart of a method for controlling a direct-write lithography machine according to another embodiment of the present invention, the method for controlling a direct-write lithography machine further includes step S8 and step S9, which are specifically described below.
S8, recording the data sequence of the deformed photoetching graph or the accumulated use data of the data sub-warehouse, wherein the accumulated use data comprises at least one of accumulated use frequency, accumulated use time and accumulated integration.
Specifically, a space threshold of the data warehouse may be preset, and when it is determined that the storage space of the data warehouse is smaller than the space threshold, cleaning is required to be performed on part of data in the data warehouse, so as to ensure that enough storage space can be reserved in the data warehouse. For example, the data sequence or the data sub-warehouse of the deformed lithography pattern that uses the least amount may be searched and replaced within the preset time domain, for example, the frequency data of use of the data sequence or the data sub-warehouse of the deformed lithography pattern may be accumulated, or the time data of use of the data sequence or the data sub-warehouse of the deformed lithography pattern may be accumulated, or the integral data of the data sequence or the data sub-warehouse of the deformed lithography pattern may be accumulated.
S9, replacing the data sequence or the data sub-warehouse of the deformed photoetching graph in the data warehouse according to an LRU (Least Recently Used ) algorithm based on the accumulated use data.
The LRU algorithm is a page replacement algorithm for memory management, and for a data block (memory block) that is in memory but is not used, called LRU, the operating system will make room to load additional data by removing the data from the memory according to which data belongs to LRU.
Specifically, according to the accumulated usage data, searching the data sequence or the data sub-warehouse of the deformed photoetching graph with the shortest usage time or the longest usage time or the lowest usage frequency or the smallest integral data according to the LRU algorithm, and replacing the data sequence or the data sub-warehouse to update the data warehouse. And the condition that excessive query time is consumed or the system processing is slow caused by excessive stored data is avoided, and the space for storing the data in the data warehouse is reasonably arranged.
In some embodiments of the present invention, as shown in FIG. 5, a block diagram of a direct write lithography machine according to one embodiment of the present invention is shown, wherein the direct write lithography machine 100 includes a processor 10 and a memory 20 in communication with the processor 10.
Wherein the memory 20 has stored therein a data warehouse 21 and a computer program executable by the processor 10, the processor 10 implementing the method of controlling a direct write lithography machine of any of the above embodiments when executing the computer program.
In an embodiment, the data warehouse 21 is set in the memory 20, then the third feature pattern data unit of the deformed lithographic pattern and the data required by the spatial light modulation device corresponding to the third feature pattern data unit are stored in the data warehouse 21, and the memory 20 further stores a computer program, and when the processor 10 executes the computer program, the operating parameters of each structure in the write-through lithographic apparatus 100 can be obtained for analysis and calculation, so as to implement the method for controlling a write-through lithographic apparatus according to any one of the above embodiments.
Specifically, taking the original photolithography graphic processing process as shown in fig. 6 as an example, a method for controlling a direct-writing type photolithography machine according to an embodiment of the present invention is described. Taking a polygon B as an example of an original lithography pattern, acquiring a deformed lithography pattern after exposure of the original lithography pattern, extracting a feature pattern data unit in the deformed lithography pattern, and matching a second feature pattern data unit in a data warehouse, wherein a third feature pattern data unit and data required by a spatial light modulation device corresponding to the third feature pattern data unit are prestored in the data warehouse, for example, a feature polygon a capable of being replaced by the deformed lithography pattern after exposure of the polygon B exists in the data warehouse, acquiring data Tri-A required by the spatial light modulation device corresponding to the feature polygon a, converting the data Tri-A required by the spatial light modulation device to acquire data F (Tri-A), and taking the data F (Tri-A) as data (Tri-B) of a digital micromirror device corresponding to the deformed lithography pattern after exposure of the polygon B.
The direct-writing lithography machine 100 according to the embodiment of the present invention includes a processor 10 and a memory 20, where the memory 20 stores a data warehouse 21 and a computer program executable by the processor 10, and when the computer program runs, the processor 10 can control to read data in the data warehouse 21 to process the deformed lithography pattern by acquiring the operation parameters of each structure in the direct-writing lithography machine 100 for analysis and calculation. Therefore, the method for controlling the direct-write lithography machine in the above embodiment is realized, and the method can be directly applied to the existing direct-write lithography machine 100, and can repeatedly use the data required by the processed spatial light modulation device during batch production of the same production material number, thereby accelerating the direct-write lithography data processing, further improving the productivity of the direct-write lithography machine 100, realizing the whole data processing process through software, and reducing the dependence on hardware resources of a processing server.
In some embodiments of the present invention, as shown in FIG. 7, a block diagram of a direct-write lithography machine according to another embodiment of the present invention is shown, wherein the direct-write lithography machine 100 includes a light source 1, a spatial light modulation device 2, and an imaging system 3, and a controller 4.
The light source 1 is used for emitting a direct writing light beam, and the direct writing light beam is projected to the spatial light modulation device 2, wherein the direct writing light beam and a photosensitive material on the surface of the substrate can generate photosensitive reaction.
In an embodiment, the spatial light modulator 2 may be a DMD device or LCLV or other suitable digital light spatial light modulator, where the DMD device includes a digital micromirror, and the digital micromirror is composed of a plurality of tiny aluminized digital micromirror devices, and can rotate around a yoke by ±12°, and the digital micromirror devices are used to reflect the incident light to different places at different rotation angles. The number of the mirror surfaces is determined by the display resolution, one small mirror surface corresponds to one pixel, and the DMD device has high reflectivity and large contrast. The spatial light modulation device 2 reflects light carrying the target image information.
Wherein the controller 4 is connected to the spatial light modulator 2 for controlling the spatial light modulator 2 according to the method of controlling a direct-write lithography machine according to any of the above embodiments. The controller 4 may include a device having a data processing function, such as a data processing chip or a computer, and the controller 4 may control the spatial light modulation device 2 to be turned on and control the angles of the respective mirrors in the spatial light modulation device 2 according to the queried target data of the spatial light modulation device 2, so that the spatial light modulation device 2 reflects the light carrying the target image information.
The imaging system 3 is used to project light carrying the target image information onto the surface of the substrate coated with the photosensitive material to form a target image on the surface of the substrate coated with the photosensitive material.
The direct writing lithography machine 100 of the present invention may employ maskless lithography techniques using a digital micromirror system such as a spatial light modulator 2 to generate a pattern, and an image is projected onto a photosensitive substrate at a magnification by an optical projection element, i.e., an imaging system 3, to generate a pattern of features. The maskless lithography technology can effectively reduce the complexity of a lithography system, a mask table and mask transmission and mask processing are not needed, the frame structure is simple and the cost is low, and the maskless lithography method based on the spatial light modulator is flexible to manufacture, high in reliability and considerable in yield, and can be used for manufacturing PCBs, TFTs (Thin Film Transi stor, thin film liquid crystal panels), MEMS (Micro electro mechanical Systems, micro-electromechanical systems) and the like.
In an embodiment, the direct-writing lithography machine 100 performs deformation processing on the original lithography pattern according to the exposure alignment information to obtain a deformed lithography pattern for the present exposure, and extracts a second feature pattern data unit corresponding to the first feature pattern data unit in the deformed lithography pattern for the present exposure. The controller 4 may obtain the data required by the spatial light modulation device according to the second feature pattern data unit according to the method of controlling the direct-writing lithography machine according to any one of the above embodiments, and adaptively adjust the state of the spatial light modulation device 2, so that the spatial light modulation device 2 reflects the light carrying the target image information, and after the light carrying the target image information passes through the imaging system 3, the light carrying the target image information is projected on the surface of the substrate coated with the photosensitive material to form the target image, so that the target image can be directly written on the surface of the substrate coated with the photosensitive material.
According to the direct-write type lithography machine 100 according to the embodiment of the present invention, the controller 4 obtains the data required by the spatial light modulation device 2 by executing the method of controlling the direct-write type lithography machine according to any one of the above embodiments, and controls the spatial light modulation device 2 according to the data required by the spatial light modulation device 2 to achieve writing of the target image value on the surface of the substrate coated with the photosensitive material. By adopting the method for controlling the direct-writing photoetching machine according to any one of the embodiments, the method can be realized by software without repeatedly processing the same or similar characteristic graph data units, thereby simplifying the process of acquiring the data required by the spatial light modulation device by the controller 4, shortening the processing time, improving the processing speed of the data and effectively utilizing the processed data each time.
Other components and operations of the direct-write lithography machine 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A method of controlling a direct write lithography machine, said direct write lithography machine comprising a spatial light modulation device, said method comprising:
acquiring an original photoetching pattern, and extracting a first characteristic pattern data unit in the original photoetching pattern;
performing deformation processing on the original photoetching graph according to exposure alignment information to obtain a deformed photoetching graph for the exposure, and extracting second characteristic graph data units corresponding to the first characteristic graph data units from the deformed photoetching graph for the exposure;
querying a pre-stored data warehouse, wherein the data warehouse comprises data sequences of deformed photoetching patterns of different types, and each data sequence comprises a third characteristic pattern data unit in the deformed photoetching patterns and data required by a spatial light modulation device corresponding to the third characteristic pattern data unit;
Determining that a target deformed photoetching pattern which is the same as the deformed photoetching pattern used for the exposure exists in the data warehouse;
acquiring a data sequence of the target deformed photoetching graph, and comparing the second characteristic graph data unit with a third characteristic graph data unit in the data sequence of the target deformed photoetching graph;
determining that a target third characteristic graph data unit which can be mutually replaced with the second characteristic graph data unit exists in the data sequence of the photoetching graph after the target is deformed, and converting the data required by the spatial light modulation device corresponding to the target third characteristic graph data unit into the spatial light modulation device target data corresponding to the second characteristic graph data unit;
and controlling the spatial light modulation device of the direct-writing photoetching machine according to the target data of the spatial light modulation device.
2. The method of controlling a direct write lithography machine as claimed in claim 1, wherein determining that there is a target post-deformation lithography pattern in the data warehouse that is the same type as the post-deformation lithography pattern for the present exposure comprises:
obtaining the comparison parameters of the deformed photoetching patterns for the exposure, wherein the comparison parameters comprise at least one of the number of pattern vertexes, the gray scale image orders, the pattern formats and the gray scale image pixel values;
Determining that the deformed photoetching patterns with the same comparison parameters as the deformed photoetching patterns for the exposure exist in the data warehouse;
and taking the deformed photoetching patterns in the data warehouse, which are the same as the comparison parameters of the deformed photoetching patterns used for the exposure, as the target deformed photoetching patterns.
3. The method of controlling a direct write lithography machine as claimed in claim 1, wherein comparing the second feature pattern data unit with a third feature pattern data unit in the data sequence of the target deformed lithography pattern comprises:
calculating a graph eigenvalue of a third characteristic graph data unit and the second characteristic graph data unit in the data sequence of the target deformed photoetching graph, and determining that the third characteristic graph data unit is equal to the second characteristic graph data unit if the graph eigenvalue is smaller than or equal to an equal threshold value;
obtaining a graph eigenvalue of a third characteristic graph data unit and the second characteristic graph data unit in a data sequence of the target deformed photoetching graph, and if the graph eigenvalue is smaller than a similarity threshold, determining that the third characteristic graph data unit is similar to the second characteristic graph data unit, wherein the similarity threshold is larger than the equal threshold;
And if the difference value is larger than the similarity threshold value, determining that a third characteristic graphic data unit which can be mutually replaced with the second characteristic graphic data unit does not exist in the data sequence of the target deformed photoetching graphic.
4. A method of controlling a direct write lithography machine according to claim 3, wherein determining that there is a target third feature pattern data unit in the data sequence of the target post-deformation lithography pattern that is interchangeable with the second feature pattern data unit, converting data required for the spatial light modulation device corresponding to the target third feature pattern data unit into spatial light modulation device target data corresponding to the second feature pattern data unit, comprises:
if the third characteristic graphic data unit is equal to the second characteristic graphic data unit, taking the third characteristic graphic data unit which is equal to the second characteristic graphic data unit as the target third characteristic graphic data unit, and taking the data required by the spatial light modulation device corresponding to the target third characteristic graphic data unit as the target data of the spatial light modulation device;
and if the third characteristic graphic data unit is similar to the second characteristic graphic data unit, taking the third characteristic graphic data unit similar to the second characteristic graphic data unit as the target third characteristic graphic data unit, and converting the data required by the spatial light modulation device corresponding to the target third characteristic graphic data unit to obtain the target data of the spatial light modulation device.
5. The method of claim 4, wherein converting the data required by the spatial light modulator corresponding to the target third feature pattern data unit, comprises:
and performing at least one of rotation, expansion, translation, rounding and sharpening on the data required by the spatial light modulation device corresponding to the target third characteristic graph data unit.
6. The method of controlling a direct write lithography machine as claimed in claim 4, wherein after determining that there is no third feature pattern data unit in the data sequence of the target post-deformation lithography pattern that is interchangeable with the second feature pattern data unit, the method further comprises:
performing data processing on the second characteristic graph data unit according to a conventional flow to obtain spatial light modulation device target data corresponding to the second characteristic graph data unit;
and storing the second characteristic graph data unit and the target data of the spatial light modulation device corresponding to the second characteristic graph data unit in a data sequence of the photoetching graph after the target is deformed.
7. The method of controlling a direct write lithography machine as claimed in claim 1,
The data warehouse comprises a plurality of data sub-warehouses, and each data sub-warehouse stores data sequences of deformed photoetching patterns of the same type or different types;
the method further comprises the steps of:
recording a data sequence of the deformed photoetching graph or accumulated use data of the data sub-warehouse, wherein the accumulated use data comprises at least one of accumulated use frequency, accumulated use time and accumulated integration;
and replacing the data sequence or the data sub-warehouse of the deformed photoetching graph in the data warehouse according to the LRU algorithm based on the accumulated use data.
8. The method of any one of claims 1-7, wherein the data repository is a cache pool or a memory pool, and the data repository stores data including at least one of values, graphics, sets of numbers, and images.
9. A direct-write lithography machine, comprising:
a processor and a memory communicatively coupled to the processor;
wherein the memory has stored therein a data warehouse and a computer program executable by the processor, the processor implementing the method of controlling a direct write lithography machine according to any one of claims 1-8 when executing the computer program.
10. A direct-write lithography machine, comprising:
a light source, a spatial light modulation device, and an imaging system;
a controller connected to the spatial light modulator for controlling the spatial light modulator according to the method of controlling a direct-write lithography machine according to any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111235304.2A CN113934115B (en) | 2021-10-22 | 2021-10-22 | Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111235304.2A CN113934115B (en) | 2021-10-22 | 2021-10-22 | Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113934115A CN113934115A (en) | 2022-01-14 |
| CN113934115B true CN113934115B (en) | 2023-10-27 |
Family
ID=79283943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111235304.2A Active CN113934115B (en) | 2021-10-22 | 2021-10-22 | Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113934115B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006162955A (en) * | 2004-12-07 | 2006-06-22 | Dainippon Screen Mfg Co Ltd | Generating device for pattern formation data, and method for generating the pattern formation data |
| CN101146408A (en) * | 2002-05-28 | 2008-03-19 | 新光电气工业株式会社 | Wiring forming system and wiring forming method for forming wiring on wiring board |
| JP2012198313A (en) * | 2011-03-18 | 2012-10-18 | Dainippon Screen Mfg Co Ltd | Drawing data correction device and drawing device |
| CN106647181A (en) * | 2016-12-19 | 2017-05-10 | 电子科技大学 | High-speed image exposure method for maskless lithography machine of DMD |
| CN110989289A (en) * | 2019-12-25 | 2020-04-10 | 中国科学院微电子研究所 | Method for improving photoetching performance of layout, corrected layout and simulation method |
| CN112987501A (en) * | 2019-12-17 | 2021-06-18 | 苏州苏大维格科技集团股份有限公司 | Direct-write lithography system and direct-write lithography method |
-
2021
- 2021-10-22 CN CN202111235304.2A patent/CN113934115B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101146408A (en) * | 2002-05-28 | 2008-03-19 | 新光电气工业株式会社 | Wiring forming system and wiring forming method for forming wiring on wiring board |
| JP2006162955A (en) * | 2004-12-07 | 2006-06-22 | Dainippon Screen Mfg Co Ltd | Generating device for pattern formation data, and method for generating the pattern formation data |
| JP2012198313A (en) * | 2011-03-18 | 2012-10-18 | Dainippon Screen Mfg Co Ltd | Drawing data correction device and drawing device |
| CN106647181A (en) * | 2016-12-19 | 2017-05-10 | 电子科技大学 | High-speed image exposure method for maskless lithography machine of DMD |
| CN112987501A (en) * | 2019-12-17 | 2021-06-18 | 苏州苏大维格科技集团股份有限公司 | Direct-write lithography system and direct-write lithography method |
| CN110989289A (en) * | 2019-12-25 | 2020-04-10 | 中国科学院微电子研究所 | Method for improving photoetching performance of layout, corrected layout and simulation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113934115A (en) | 2022-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5596067B2 (en) | Lithographic apparatus and device manufacturing method using 2D run-length encoding for image data compression | |
| JP2004343127A (en) | Lithographic mask layout developing method, lithographic mask layout developing apparatus, and computer-readable medium containing one or more sequences of one or more commands for executing method of developing lithographic mask layout | |
| CN112650029B (en) | Method, computer system, and non-transitory computer readable medium for correcting non-uniform image patterns on a substrate | |
| CN101111850A (en) | Method and system for a maskless lithography rasterization technique based on global optimization | |
| KR20110091903A (en) | Gradient assisted image resampling in micro-lithographic printing | |
| CN109073986B (en) | Segmented alignment modeling method | |
| CN107810448B (en) | Non-uniform pattern correction using time-shifted exposure | |
| CN104375384B (en) | A kind of exposure method and its exposure device | |
| TW202221421A (en) | Process, system, and software for maskless lithography systems | |
| CN113934115B (en) | Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine | |
| CN113454537B (en) | Halftoning scheme for maskless lithography | |
| JP2005521253A (en) | Method and apparatus for printing large data flows | |
| JP4350096B2 (en) | Method and system for interpolating pixel gray tones with constraints to rasterize patterns | |
| CN113454536B (en) | Halftoning scheme for maskless lithography | |
| WO2021041100A1 (en) | Multi-tone scheme for maskless lithography | |
| US11868700B2 (en) | Use of adaptive replacement maps in digital lithography for local cell replacement | |
| US20230288812A1 (en) | Methods to improve process window and resolution for digital lithography with two exposures | |
| US20230152684A1 (en) | Mura reduction method | |
| JP7166435B2 (en) | A Method for Improving Maskless Lithography Resolution While Maintaining High Image Contrast | |
| US20230314953A1 (en) | Methods to improve process window and resolution for digital lithography with auxiliary features | |
| US20160284044A1 (en) | Low-latency high bandwidth data path | |
| CN116088279A (en) | Direct-writing type photoetching machine, photoetching pattern compensation method thereof and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |