CN104375384B - A kind of exposure method and its exposure device - Google Patents
A kind of exposure method and its exposure device Download PDFInfo
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- CN104375384B CN104375384B CN201310351942.XA CN201310351942A CN104375384B CN 104375384 B CN104375384 B CN 104375384B CN 201310351942 A CN201310351942 A CN 201310351942A CN 104375384 B CN104375384 B CN 104375384B
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Abstract
The present invention discloses a kind of exposure device, for the exposure figure in substrate, including：One laser instrument, for providing exposure light source；One light source adjusting module, for adjusting the exposure light source；One spatial light modulator, for the exposure light source is modulated into a figure；One object lens, for by the pattern imaging to the substrate；One work stage, for supporting and driving the basement movement；And a synchronous control unit, for the Synchronization Control work stage, spatial light modulator and the laser instrument.Present invention simultaneously discloses a kind of exposure method.
Description
Technical field
The present invention relates to a kind of IC manufacturing manufacture field, more particularly to a kind of maskless lithography exposure method and
Its exposure device.
Background technology
Projection aligner can by the circuitous pattern on mask through optical systems such as projection objectives necessarily amplifying
Or the multiplying power for reducing is projected in the substrate for scribbling photoresists.Projection aligner is widely used to the system of integrated circuit at present
Make, and range of application expands to the fields such as FPD, printed circuit board (PCB) manufacture in recent years.
For generally adopting scanning projection formula exposure device, the manufacture of mask, management and maintenance cost constantly to rise at present,
Simultaneously mask platform, mask transmission, framework are put forward higher requirement.Maskless lithography can be effectively reduced answering for etching system
Miscellaneous degree (simple without the need for mask platform, mask transmission, frame structure) and processing, the maintenance cost of mask, and it is based on space light modulation
Device（Spatial Light Modulatro, hereinafter referred to as SLM）Maskless lithography method because its making flexibly, reliability it is high
It is being increasingly used to make printed circuit board (PCB) etc. advantage（PCB）, film liquid crystal panel（TFT）, MEMS（MEMS）.
US7612865, US7253882, US20090086182, US2008258069 respectively Dainippon Screen,
The maskless lithography apparatus of the companies such as Fujifilm, Maskless Lithography Inc, ORC, its feature is：Mercury lamp swashs
The ultraviolet light of optical diode (Laser Diode, hereinafter referred to as LD) outgoing incides digital micromirror array Jing after illuminator
(Digital Micromirror Device, hereinafter referred to as DMD) surface, DMD generate figure to be exposed, through projection objective
Gluing substrate surface is imaged onto, substrate does scanning motion, and DMD is constantly changing figure, so as to obtain complete figure to be exposed.
There is a very big defect in the system described in each document above.In maskless exposure system, spatial light
The figure generated by modulator (such as DMD) is discrete, and substrate is doing continuous scanning.Every width exposure figure is generated by SLM
After can keep a period of time, display cycle (or referred to as frame rate) of the time for SLM, by taking DMD as an example, at present which is maximum
Refresh rate is 32K fps, i.e. 31.25us, according to continuous light sources such as mercury lamp or LD, it is assumed that substrate is swept with the speed of 0.5m/s
Motion is retouched, then equivalent to the fading for generating 0.5m/s × 31.25us=15.625um.This defect significantly limit
The application of maskless lithography, is allowed to carry out the exposure of high graphics, or can only enter under very slow sweep speed
Row exposure, extreme influence yield.
Can be seen that for the maskless lithography system based on SLM from background above technology, resolution ratio and yield are present
Conflict, in order to expand the application of maskless lithography, needs to consider the feelings maskless lithography system resolution ratio is ensured
Under condition, the method for improving its yield.
The content of the invention
In order to overcome defect present in prior art, the present invention to provide a kind of exposure method of maskless lithography and its exposure
Electro-optical device, to improve resolution ratio and yield simultaneously.
In order to realize foregoing invention purpose, the present invention discloses a kind of exposure device, for the exposure figure in substrate, bag
Include：One laser instrument, for providing exposure light source；One light source adjusting module, for adjusting the exposure light source；One space light modulation
Device, for the exposure light source is modulated into a figure；One object lens, for by the pattern imaging to the substrate；One work stage, is used for
Support and drive the basement movement；And a synchronous control unit, for the Synchronization Control work stage, spatial light modulator and
The laser instrument.
Further, the laser instrument generates pulse laser.The light source adjusting module includes：One expands unit, for inciting somebody to action
The emergent light of the laser instrument is expanded；One variable attenuator, the emergent light for unit is expanded for this provides 0% ~ 99% continuous can
Adjust decay；Even light illuminating unit, for the emergent light of the variable attenuator to be modulated to be illumination.The spatial light modulator is
Digital micromirror array.The digital micromirror array includes some micro-reflectors, and the micro-reflector can be according to the Synchronization Control list
The control signal that unit sends is fixed angular deflection.The work stage takes scanning step motion.
Present invention simultaneously discloses a kind of exposure method, including：Step 1, loading mask data, expose according to spatial light modulator
The data of each exposure field in substrate are split as several exposure bars by width of the light visual field along scanning direction；Step 2, general
The figure of each exposure bar is converted to gray-scale map to obtain the distribution of the exposure dose in image space grid；Step 3, will be obtained in step 2
The gray-scale map for obtaining is converted to some binaryzation figure sequences and is stored；Step 4, make pulse laser, the figure sequence and carrying
The work stage of substrate works asynchronously and exposes.
Further, in the step 1, the form of mask data provides form or polar plot form for sequential.The step 2
Further include：Step 2.1, the figure is carried out rasterizing, grid size is with the spatial light modulator pixel in the basal surface
On it is in the same size；Step 2.2, determine the rasterizing figure gray value, to obtain the exposure dose in each grid point
Cloth.In the step 2.2, the computational methods of the gray value are：。
Following principle is followed in binaryzation figure sequence transfer process in the step 3：In exposure process, the spatial light is adjusted
Device exposure field processed passes through each image space grid at least n times, wherein, the N values are equal to the gray scale exponent number of the gray-scale map.
Wherein, the synchronous working in the step 4 is referred to：When the work stage scanning motion is to default position, correspondence
Figure sequence exported, while laser instrument output pulse laser.
Compared with prior art, the advantage of the technical program is：Firstth, using pulsed light pulse width the characteristics of, keep away
Figure fading caused by the spatial light modulator display time is exempted from；Secondth, dosage is split into N parts to be exposed, is conducive to carrying
High dose control accuracy；3rd, work stage can high-speed and continuous scanning, be conducive to improve yield.
Description of the drawings
Can be described in detail by invention below with regard to the advantages and spirit of the present invention and institute's accompanying drawings are obtained further
Solution.
Fig. 1 is the exposure device shown by the present invention；
Fig. 2 is DMD modulation principle schematic diagrames；
Fig. 3 is the mask pattern data schematic diagram shown by the present invention；
Fig. 4 is the schematic diagram of each exposure field on silicon chip；
Fig. 5 is each strip schematic diagram on silicon chip；
Fig. 6 is the mask graph gray processing schematic diagram in the Strip on silicon chip；
Fig. 7 is the Strip visual field scanning schematic diagrames on silicon chip；
Fig. 8 is the Strip binaryzation figure sequence diagrams on silicon chip；
Fig. 9 is mask digitized process schematic diagram；
Figure 10 is the Strip figure sequences synchronization schematic diagram on silicon chip；
Figure 11 is the work stage schematic diagram synchronous with figure sequence shown by the present invention.
Specific embodiment
Describe the specific embodiment of the present invention below in conjunction with the accompanying drawings in detail.
Exposure device disclosed in the technical program as shown in figure 1, including pulse laser 104, expand unit 103, can
Become attenuator 102, even light illuminating unit 101, SLM（Spatial light modulator）, object lens 106, work stage 108, silicon chip 107 and same
Step control unit 105 is constituted.
Pulse laser 104 provides exposure light source for exposure device, its wavelength should within the sensitive volume of photoresist, one
As require that wavelength ratio ultraviolet band is shorter.The technical program requires that light source is necessary for pulsed light, and its reason has two：One is to provide
The light source that duration is shorter but energy is higher, it is to avoid continuous light figure virtualization phenomenon produced when exposing；Two can be with
Work stage and SLM form synchronization, it is ensured that image quality.
Expand unit 103 to expand the light that laser instrument 104 sends, make after illumination, beam area and SLM modulation areas
Matching, it is ensured that the utilization rate of the upper each modulating units of SLM.
Variable attenuator 102 provides 0% ~ 99% continuously adjustabe decay for the pulse that laser instrument 104 sends, for controlling to shine
It is mapped to the energy of pulse on 107 surface of silicon chip.
The light modulation that laser instrument 104 is sent by even light illuminating unit 101 is Uniform Illumination, is irradiated to SLM surface.
SLM is used to form modulation pattern, equivalent to the mask graph in conventional projection photoetching, only covers in this programme
Mould figure changes in real time, and the figure shown by which is controlled output by synchronous control unit 105.
SLM employed in the present embodiment is DMD（Digital micromirror array）, DMD is selected in SLM the present embodiment, it is
A kind of MEMS, each micro-reflector can be fixed angular deflection according to the control signal on its substrate address electrode.Such as Fig. 2
It is shown, some non deflected micro-reflectors 202 and deflection micro-reflector 203 are set on the substrate address electrode 201 of DMD.When certain
Micro-reflector receive control signal for 1 when, its deflection turn 12 °, reflected light will be into subsequent optical system, such as in the present embodiment
Object lens；When it is 0 to receive signal, -12 ° are deflected.Control signal corresponds to mask pattern data to be exposed.According to DMD
Characteristic, it is desirable to the incidence angle of illumination light（Relative to the DMD working faces in the case of zero deflection）For 23 °.
Object lens 106 are for being imaged onto 107 surface of silicon chip by the modulation pattern on SLM.
Work stage 108 drives silicon chip 107 to be moved, and in this programme, work stage takes scanning step motion.
Synchronous control unit 105 is responsible for：Synchronization Control between work stage 108, SLM, pulse laser 104, while together
Also comprising mask graph sliding-model control, storage, transmission function in step control unit.
Exposure method corresponding to the present embodiment is as follows：
Mask data is loaded first, and the mask data for now being loaded is usually GDS II format（Sequential provides form）Or
Polar plot form.As shown in Figure 3.Here at least need to load a die（Exposure field）Mask data.On loading Wafer
Exposure field data, i.e., according to exposure technology prescription, obtain each die（Exposure field）Distribution on wafer, such as Fig. 3 institutes
Show.
According to the exposure field of SLM along scanning direction width, by each die（Exposure field）Data be split as it is some
Individual strip（Exposure bar）, as shown in Figure 5.
Figure on each Strip is converted to into gray-scale map by polar plot form, as shown in Figure 6.First by vector graphics
The mask graph of formula carries out rasterizing, grid size（Image space Pixel Size）With DMD pixels（Speculum）On silicon chip face
It is in the same size.Need mask graph is carried out gray processing further after rasterizing, can be obtained in each grid by gray processing
Exposure dose is distributed, to have the exposure dose under mask state as full dose（Full dosage）, dosage in each grid or it is
Full dose, or of some points for full dose.Dosage in the present embodiment, in image space grid（I.e. corresponding gray scale
Value）Can according to mask graph in the grid occupied area ratio-dependent, i.e.,：
Wherein gray-scale level is several can be adjusted according to different graphic live width, typically can be by lithography simulations such as such as prolith
Software is calculated.In the present embodiment, gray scale exponent number is set to 4 ranks by us.In each grid after gray processing, need to carry out
The grid of exposure is labeled by 1 ~ 69 sequence number.Gray processing figure is converted to binaryzation figure sequence to be stored.First
As shown in fig. 7, the grid size of SLM image spaces is consistent with the image space grid after mask graph gray processing, as grey exponent number is
In 4, therefore scanning process, it is necessary to assure SLM visual fields through each image space grid at least 4 times, due to SLM be it is static, therefore
Corresponding to work stage every time through the 1/4 of SLM image space width, according to this principle, by the inserting drawing after gray processing it is
Figure sequence, as shown in Figure 8.
In figure sequence, each figure both corresponds to 1/4 Full Dose（Full dosage）Dosage.Whole digitized process is such as
Shown in Fig. 9, final all of figure sequence is stored to synchronous control unit.In Fig. 9,901 obtain each die（Exposure field）
Distribution on wafer；902 by each die（Exposure field）Data be split as several strip；903 by each Strip
On figure gray-scale map is converted to by polar plot form；Inserting drawing after gray processing is figure sequence by 904；905 will exposure
The silicon chip for completing is put into the storage box.
During exposure, pulsed light, figure sequence, work stage three synchronize, as shown in Figure 10, Figure 11, work stage motion
To default position X1, during X2 ... X9, corresponding figure sequence is followed successively by Frame1, Frame2 ... Frame9, while swashing
Light device exports pulse, and within a Frame cycle, its output gross energy should be the 1/4 of mask exposure dosage, the energy hole
Realized by the various variable attenuation piece of system.Move distance of the work stage between two Frame for SLM visual field widths 1/4,
So repeat, complete scanning.
Compared with prior art, the advantage of the technical program is：Firstth, using pulsed light pulse width the characteristics of, keep away
Figure fading caused by the spatial light modulator display time is exempted from；Secondth, dosage is split into N parts to be exposed, is conducive to carrying
High dose control accuracy；3rd, work stage can high-speed and continuous scanning, be conducive to improve yield.
The preferred embodiment of the simply present invention described in this specification, above example is only to illustrate the present invention
Technical scheme rather than limitation of the present invention.All those skilled in the art pass through logic analysis, reasoning under this invention's idea
Or the available technical scheme of limited experiment, all should be within the scope of the present invention.
Claims (6)
1. a kind of exposure method, using a kind of exposure device, for the exposure figure in substrate, the exposure device includes：
One laser instrument, for providing exposure light source；
One light source adjusting module, for adjusting the exposure light source；
One spatial light modulator, for the exposure light source is modulated into a figure；
One object lens, for by the pattern imaging to the substrate；
One work stage, for supporting and driving the basement movement；And
One synchronous control unit, for work stage, spatial light modulator and the laser instrument described in Synchronization Control；
Characterized in that, the exposure method includes：
Step 1, loading mask data, according to spatial light modulator exposure field along scanning direction width, by substrate each
The data of exposure field are split as several exposure bars；
Step 2, by it is each exposure bar figure be converted to gray-scale map with obtain the exposure dose in image space grid distribution；
Step 3, the gray-scale map obtained in step 2 is converted to some binaryzation figure sequences is stored；
Step 4, the work stage of pulse laser, the figure sequence and bearing basement is made to work asynchronously and expose.
2. exposure method as claimed in claim 1, it is characterised in that the form of mask data is carried for sequential in the step 1
For form or polar plot form.
3. exposure method as claimed in claim 1, it is characterised in that the step 2 is further included：
Step 2.1, the figure is carried out rasterizing, grid size is with the spatial light modulator pixel on the basal surface
It is in the same size；
Step 2.2, determine the rasterizing figure gray value, with obtain the exposure dose in each grid distribution.
4. exposure method as claimed in claim 3, it is characterised in that the computational methods of gray value described in the step 2.2
For：
5. exposure method as claimed in claim 1, it is characterised in that converted in binaryzation figure sequence in the step 3
Following principle is followed in journey：In exposure process, cause the spatial light modulator exposure field to pass through each image space grid at least
N times, wherein, the N values are equal to the gray scale exponent number of the gray-scale map.
6. exposure method as claimed in claim 1, it is characterised in that the synchronous working in the step 4 is referred to：The workpiece
When platform scanning motion is to default position, corresponding figure sequence is exported, while laser instrument output pulse laser.
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| CN201310351942.XA CN104375384B (en) | 2013-08-14 | 2013-08-14 | A kind of exposure method and its exposure device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI627440B (en) * | 2017-05-17 | 2018-06-21 | 力晶科技股份有限公司 | Reconfiguring image brightness module and related method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301912B (en) * | 2014-07-11 | 2018-01-19 | 上海微电子装备（集团）股份有限公司 | A kind of exposure device and exposure method for lithographic equipment |
| CN104865800A (en) * | 2015-05-27 | 2015-08-26 | 中山新诺科技股份有限公司 | Synchronous pulse exposure method for maskless lithography equipment and digital laser direct-writing system |
| CN110967931A (en) * | 2018-09-30 | 2020-04-07 | 上海微电子装备（集团）股份有限公司 | Exposure apparatus and exposure method |
| CN109445253B (en) * | 2018-12-25 | 2021-03-05 | 合肥芯碁微电子装备股份有限公司 | Rapid scanning exposure method based on DMD leveling state |
| CN112799285B (en) * | 2019-11-14 | 2022-04-22 | 苏州苏大维格科技集团股份有限公司 | Three-dimensional micro-nano structure photoetching system and method thereof |
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| US7532378B2 (en) * | 2006-02-21 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device |
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| CN1602451A (en) * | 2001-11-07 | 2005-03-30 | 应用材料有限公司 | Maskless photon-electron spot-grid array printer |
| CN1639642A (en) * | 2002-02-25 | 2005-07-13 | 麦克罗尼克激光***公司 | An image forming method and apparatus |
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