CN1138337C - Common collector-common base and common collector-common base-common collector transistor amplifier circuit - Google Patents
Common collector-common base and common collector-common base-common collector transistor amplifier circuit Download PDFInfo
- Publication number
- CN1138337C CN1138337C CNB99121322XA CN99121322A CN1138337C CN 1138337 C CN1138337 C CN 1138337C CN B99121322X A CNB99121322X A CN B99121322XA CN 99121322 A CN99121322 A CN 99121322A CN 1138337 C CN1138337 C CN 1138337C
- Authority
- CN
- China
- Prior art keywords
- altogether
- collection
- cobasis
- circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The present invention relates to two amplifying circuits, which are formed by the serial connection of optimized transistor 'common collector, common base' basic configuration circuits according to an optimized combination way of 'common collector-common base' or 'common collector-common base-common collector'. The present invention uses one stage amplification to realize wide band linear amplification with high resistance input, low noise, low distortion, low attached phase shift, high gains, high conversion rates and high stability, which is not achieved by two to three stage amplification in the past, and is a new circuit suitable for micro signal detection, linear integrated circuits and high frequency high power oscillation or transmission.
Description
The present invention relates to two kinds and be connected in series the amplifying circuit that forms, genus transistor circuit technical field by " collection-cobasis altogether ", " collection-cobasis-collect altogether " altogether mode respectively by preferred transistor " altogether collection ", " cobasis " two basic configuration circuit.
Since nineteen forty-seven in the world first transistor come out, so far surplus in the of 50 year, but transistor is little with its volume, power consumption is low, long Highgrade integration of life-span, be convenient to all advantages such as large-scale industrialization production, has replaced the vacuum tube with one-hundred-year history in the numerous areas of society already.
Though semiconductor technology is outshined othersOne branch of the tree is particularly thriving, in some specific field: for example high-frequency, high-power emission, vacuum tube are so far but still in occupation of unshakable absolute leading position.Even at H
i-F
iIn audio-frequency amplification this and the closely-related common engineering technology problem of people's daily life, the senior older generations to the vacuum tube amplifier tone color that meaningful to clearly to alcohol especially feelings only bell is arranged.In these fields, the transistor and the circuit thereof of reality can't be equal to mutually with vacuum tube.The vacuum tube that is made of untouchable electrode is especially suitable for use as the linear amplification of high-frequency, high-power, low noise, low distortion.
Five during the last ten years, and people a kind ofly to replace vacuum tube fully with transistor and make the method for linear amplification and made unremitting effort in order to look for.Sixties end, the U.S. have at first produced " FETRON " (the compound technotron of high pressure) device, in order to replace the small-sized sparate heater valve of part and to be widely used in the instrument and equipments such as telephone exchange, communication and navigation.But it is the just reprint of vacuum tube " shaded place-grid ground " amplifying circuit in fact, and this " cascode-cobasis " circuit that is limited to the vacuum circuit theory and is transplanted in the transistor circuit often shows unsatisfactoryly at high-frequency, low noise linear amplifier circuit in using.In the last few years, each big semiconductor device manufacturers of the world had been released a lot of low noise microwave transistors unexpectedly mutually, but compare with vacuum tube, will really realize high-frequency, high-power, the gap all too is big.
The world today, semiconductor and integrated circuit technique thereof just stride forward towards the nanometer stage.But, climb up the moon already, enter space and roam as the mankind, it is the same but not to be able to do in time to understand fully the rely earth even the mankind itself that stay in of the mankind as yet.Five during the last ten years, semiconductor technology research, use and the process of development in too and depositing so unluckily basic theory with practical application is top-heavy, mutual unbalance serious problems.
The objective of the invention is for further improving the transistor circuit basic theory, by the serial connection amplifying circuit of transistor " altogether collection-cobasis " and " collection-cobasis-collection " altogether altogether these two kinds of patterns is provided, broke the general layout of only using simple " cascode ", " collection altogether ", " cobasis " or " cascode-cobasis " these conventional transistor basic amplifier circuits and use pipe and number of stages of amplification the more also to be apt in the transistor amplifier circuit in the past; Fully excavate the internal potential of transistor basic amplifier circuit, extended transistor amplifies and high frequency limit, the improvement of oscillating circuit are linear, reduce noise; In present stage, be to major general's vacuum tube from Detection of Weak Signals and the height very relevant with people's daily life protected the audio engineering and thoroughly eliminated, vacuum tube is eliminated gradually in high-frequency, these last specific areas of high-power emission and is established down solid foundation the most at last.
Technical scheme of the present invention is as follows:
One, transistor " collection-cobasis altogether " amplifying circuit, its special character is: sort circuit is connected in series transistorized " altogether collection ", " cobasis " two kinds of basic configuration circuit to form by the mode of " collection-cobasis altogether " circuit and makes one-level and amplify, and this serial connection amplification mode is equally applicable to field effect transistor or mixes the transistor amplifier circuit of use with field effect transistor.
Review and the comparator transistor circuit in " cascode ", " altogether collection ", " cobasis " three kinds of basic configuration circuit, be not difficult to find out: " collection altogether ", " cobasis " these two kinds of basic configuration circuit all have high frequency characteristics, favorable linearity and lower noise relatively preferably." collection altogether " configuration circuits has higher current gain " cobasis " configuration circuits that very big voltage gain is then arranged.It is essential: the output impedance of " collection altogether " configuration circuits is connected in series formation " collection-cobasis altogether " circuit with " cobasis " if the input impedance of configuration circuits is in the same order of magnitude substantially, impedance between them can be mated just, and natural energy is realized lossless, undistorted transmission between the two.The institute that the new-type circuit that this optimum organization forms has had both " collection altogether ", " cobasis " these two kinds of basic configuration circuit has superiority, and has the dual isolation so the circuit of " base-ground ", " collection-ground " circuit very stable between output signal and the input signal in addition.
Analyze very similar with it traditional transistor " cascode-cobasis " circuit again: there is inadequate natural endowment in " cascode " configuration apparent, that " cascode-cobasis " circuit prime is partly used: input impedance is not high enough, linearity is poor, noise is big, frequency band is narrow; Crucial problem is: the serious mismatch of the impedance between " cascode-cobasis ", result are to cause system linearity further to worsen naturally; Although it has high electric current, voltage gain, but is difficult to enable in high-frequency, low noise linear circuit.
Below in conjunction with circuit diagram transistor " collection-cobasis altogether " amplifying circuit is further described:
Fig. 1 is the basic circuit configuration picture of transistor " collection-cobasis altogether " amplifying circuit: for improving the transistor Q among input impedance, the figure
1Adopt field effect transistor and worked in " altogether collection " (leaking altogether) configuration of low-voltage power supply, transistor Q
2Work in " cobasis " configuration of high voltage supply; Resistance R
cBe output loading, R
1, R
2And R
bBe the input biasing resistor, resistance R
bExcept the effect of playing stable operating point, also produce electric current series connection negative feedback simultaneously to improve input impedance, the characteristic of improving circuit and the ride gain of " cobasis " configuration circuits part.
This circuit working is in the serial connection magnifying state, and it is long-pending with the current gain of " cobasis " configuration that the total current gain of circuit equals " collection altogether " (leaking altogether) configuration; Because the current gain of " cobasis " configuration is slightly less than 1, so the total current gain of circuit is similar to the current gain of " collection altogether " (leaking altogether) configuration; In like manner, because the voltage gain of " collection altogether " (leaking altogether) configuration is slightly less than 1, so the total voltage gain of circuit is similar to the voltage gain of " cobasis " configuration.
" cobasis " configuration has very high voltage gain, can accomplish hundreds of thousands of times, and the voltage gain of " collection altogether " (leaking altogether) configuration is slightly less than 1, power supply ± E
c(± E
D) ratio answer the height of root voltage gain to choose, general desirable ten to tens of ratios one.
The prime of circuit partly is in low-voltage, little electric current " collection altogether " (leaking altogether) configuration, so power consumption is minimum.
When we replaced " cascode " circuit and make high frequency and amplify with " cobasis " circuit after, the frequency of utilization parameter was by from f
βExpanded to f
α, the upper limit of operating frequency has been enhanced at least one order of magnitude.Consider that present high-frequency, powerful Production of Transistor make difficulty, therefore, this employing " collection-cobasis altogether " amplifying circuit, with frequency of utilization from f
βBe converted into f
αThereby, realize that the high-frequency that institute in the past can not carry out, the method for high-power amplification have the ten minutes active operation significance
This new-type circuit is compared characteristic between them with the vacuum tube amplifying circuit have surprising similarly, and particularly importantly: it only amplifies with the wide-band linearity that one-level is amplified the high resistant input that just realized needing two to three grades of amplifications just can reach, low noise, low distortion, low additional phase shift, high-gain, high conversion rate, high stability in the past.Thereby, this circuit is all to be suitable for the novel circuit that uses from Detection of Weak Signals, linear integrated circuit and even high-frequency, high-power vibration or emission.
Two, transistor " common collection-cobasis-collect altogether " amplifying circuit, its special character is: sort circuit is connected in series transistorized " altogether collection ", " cobasis " two kinds of basic configuration circuit to form by the mode of " collection-cobasis-collection " altogether altogether circuit and makes one-level and amplify, and it is that the low-resistance of transistor " collection-cobasis altogether " amplifying circuit is exported pattern; This serial connection amplification mode also is equally applicable to field effect transistor or mixes the transistor amplifier circuit of use with field effect transistor.
Transistor " altogether collection-cobasis " though the amplifying circuit function admirable thisly seem intimate perfect circuit and drawn a unidirectional significant deficiency of following of emitter follower; It is particularly outstanding that this defective seems when voltage gain is higher, its output is that high impedance, carrying load ability are weak, event is necessary this circuit is done further improvement in addition: circuit is connected in series complementation to it if we introduce known ＂ SRPP ＂ (Shunt Regulated Push-Pull) [(or shunting) in parallel adjustment type is recommended amplification], and problem will greatly be taken on a new look:
Below in conjunction with circuit diagram transistor " common collection-cobasis-collect altogether " amplifying circuit is further described:
Fig. 1 transistor " collection-cobasis altogether " is amplified the load resistance R in the basic circuit configuration picture
cReplace with a transistor circuit that works in " being total to collection " (or leaking altogether) configuration, amplifying circuit is connected in series complementation just can " to be total to collection-cobasis " to transistor, thus pie graph 2
aShown transistor " altogether collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether amplifying circuit.When using " depletion type " field effect transistor in newly-increased " collection altogether " (leaking altogether) configuration circuits, circuit can be reduced to Fig. 2
bForm.
At Fig. 2
aAnd Fig. 2
bIn, transistor Q
1The main negative sense of being responsible for signal voltage is followed, and transistor Q
3Then the forward of mainly being responsible for signal voltage is followed.
According to H
i-F
iThe principle of amplifying circuit " succinctly supreme ", this circuit composes in series the one-level in-phase amplification circuit to " collection altogether ", " cobasis ", " collection altogether " three transistor basic configuration circuit, and newly-increased " collection altogether " configuration circuits has lower output impedance simultaneously except that very high apparent resistance is arranged; As can be seen: this circuit also has the Low ESR than transistor " collection-cobasis altogether " the more good linearity of amplifying circuit with exporting except all advantages with transistor " collection-cobasis altogether " amplifying circuit.
Fig. 1 is the basic circuit configuration picture that shows " collection-cobasis altogether " of the present invention amplifying circuit.
Fig. 2
aAnd Fig. 2
bIt is the basic circuit configuration picture that shows " common collection-cobasis-collect altogether " of the present invention amplifying circuit.
Fig. 3
aBe a configuration of circuit figure who shows according to the structure of the 1st embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
Fig. 3
bBe a configuration of circuit figure who shows according to the structure of the 1st embodiment of " altogether collection-cobasis-collect altogether " of the present invention amplifying circuit.
Fig. 4
aBe a configuration of circuit figure who shows according to the structure of the 2nd embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
Fig. 4
bBe Fig. 4
aThe distortion circuit.
Fig. 4
cBe a configuration of circuit figure who shows according to the structure of the 2nd embodiment of " altogether collection-cobasis-collect altogether " of the present invention amplifying circuit.
Fig. 5
aBe a configuration of circuit figure who shows according to the structure of the 3rd embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
Fig. 5
bBe a configuration of circuit figure who shows according to the structure of the 3rd embodiment of " altogether collection-cobasis-collect altogether " of the present invention amplifying circuit.
Fig. 6
aBe a configuration of circuit figure who shows according to the structure of the 4th embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
Fig. 6
bBe a configuration of circuit figure who shows according to the structure of the 4th embodiment of " altogether collection-cobasis-collect altogether " of the present invention amplifying circuit.
Fig. 7 is a configuration of circuit figure who shows according to the structure of the 5th embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
Fig. 8 is a configuration of circuit figure who shows according to the structure of the 6th embodiment of " altogether collection-cobasis " of the present invention amplifying circuit.
But content of the present invention is not limited to shown in the accompanying drawing.
Embodiments of the invention are done the explanation of detail below in conjunction with accompanying drawing:
Transistor complementation " common collection-cobasis ", " collection-cobasis-common collection altogether " amplifying circuit:
Fig. 3
aBe transistor " collection (leaking the altogether)-cobasis altogether " amplifying circuit that adopts complementary input mode:
For overcoming the unidirectional contradiction of following of emitter follower, this circuit has adopted the mode of complementary input.
The Q of " collection altogether " (leaking altogether) configuration circuits among the figure
1, Q
2What use is depletion field effect transistor, and the positive negative sense of responsible signal voltage is followed respectively, and the signal voltage after process is amplified is by transistor Q
3, Q
4Collector electrode take out; After these two output voltages are synthetic at last, just emitter-base bandgap grading can be exported unidirectional follow not enough and thoroughly eliminate.
Fig. 3
bBe the transistor that adopts complementary input mode " collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether altogether amplifying circuit, it is Fig. 3
aLow-resistance output pattern.In this circuit, owing to having carried out parallel and the dual complementation of serial, so the distortion of circuit is than Fig. 3
aLittler.
Transistor " common collection-cobasis ", " collection-cobasis-common collection altogether " difference channel:
Solve the unidirectional contradiction of following of above-mentioned emitter follower and also have another good method, that adopts transistor " common collection-cobasis ", " collection-cobasis-common collection altogether " difference channel exactly.
The same with other traditional transistor circuit, transistor " common collection-cobasis ", " collection-cobasis-common collection altogether " circuit can work in the direct current magnifying state equally and be applicable to difference channel.
More traditional transistor both-end input, both-end output difference channel and the Fig. 4 that newly provides
aThe input of transistor both-end, both-end output " collection (leaking altogether)-cobasis altogether " difference channel:
Traditional both-end input transistors difference channel: the low drift of sort circuit also has very strong common-mode rejection ratio.But two difference amplifier transistors all are operated in " cascode " configuration, and input impedance is not high enough, linearity is poor, noise is big, frequency band is narrow; These deficiencies early have final conclusion in the basic theory of transistor circuit.If two difference amplifier transistors use field effect transistor, then input impedance will greatly improve, but voltage gain certainly will can descend again to some extent.The best approach that solves this contradiction is to adopt transistor " collection-cobasis altogether " or " collection-cobasis-be total to collect " altogether differential amplifier circuit.
Fig. 4
aBe both-end input, both-end output transistor " collection (leaking the altogether)-cobasis altogether " difference channel that newly provides:
Fig. 4
aCircuit not only can overcome fully traditional both-end input transistors difference channel circuit not high enough, the many drawbacks such as linearity is poor, noise is big, frequency band is narrow of intrinsic input impedance, but also very high voltage gain can be arranged.
For improving the Q among input impedance, the figure
1, Q
2Can use field effect transistor, obtain high voltage gain, work in the Q of " cobasis " configuration
3, Q
4Should adopt high back-pressure bipolar transistor.
Work in the transistor Q of " collection altogether " (leaking altogether) configuration
1, Q
2, with work in the transistor Q of " cobasis " configuration
3, Q
4Each performs its own functions: one group is used to improve input impedance, takes over from the past and sets a new course for the future, reduces noise, spread bandwidth; Another group then is used for the wide-band linearity of high-gain, low noise, low distortion and amplifies.
Except the element that uses about on the circuit the strict symmetry, work in the bipolar transistor Q of " cobasis " configuration
3, Q
4With the field-effect transistor Q that works in " collection altogether " (leaking altogether) configuration
1, Q
2Between also exist can be complementary positive and negative temperature coefficient, this has obtained further raising with regard to the characteristic that makes the low drift of this circuit.
Owing to work in the Q of " cobasis " configuration
3, Q
4Very high voltage gain is arranged, and the transistor of therefore this both-end input, both-end output " collection-cobasis altogether " difference channel also has relative stronger common-mode rejection ratio when the input with traditional both-end input transistors difference channel is all high impedance.
Fig. 4
bBe Fig. 4
aThe distortion circuit.
Fig. 4
cBe both-end input, both-end output transistor " collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether altogether difference channel:
As previously mentioned, owing to all carried out the complementation of positive negative sense serial connection emitter following in every arm of circuit, " collection altogether " (leaking altogether) configuration circuits as the load of " cobasis " configuration circuits has very high apparent resistance value again, like this, all good characteristics of " cobasis " configuration low distortion in the circuit, low noise, high-gain broadband linear amplification are just demonstrated nothing left during this time, thereby can be at the voltage gain of accomplishing on each single armed more than at least 60 dB; Meanwhile, the common-mode rejection ratio of circuit has also correspondingly been mentioned higher level.
Embodiment 3
Transistor " common collection-cobasis ", " collection-cobasis-common collection altogether " oscillating circuit:
" collection altogether " configuration high input impedance of " collection-cobasis altogether " circuit, and signal source high degree of isolation because transistor; And the base earth of " cobasis " configuration, with the amplifying signal and the prime isolation of collector electrode output; Therefore transistor " collection-cobasis altogether ", " collection-cobasis-be total to collect " altogether circuit also possess this excellent characteristic of high stability are arranged except having very high input impedance, existing higher current gain, having the good characteristics such as very big voltage gain, wideband sound, low noise, low distortion, high conversion rate again.
It is very little that another key factor that makes circuit have this good characteristic of high stability is that transistor " altogether collection-cobasis " or " collection-cobasis-collect altogether " altogether circuit have only been made the additional phase shift of the amplification of one-level homophase, circuit altogether, so circuit is not prone to self-excitation.
For transistor oscillating circuit, especially high-frequency oscillating circuit, must possess low noise and the good frequency-amplitude characteristic except requiring circuit, also require circuit to have fabulous phase-width of cloth characteristic simultaneously, to keep the highly stable of oscillating circuit.Transistor " common collection-cobasis ", " collection-cobasis-common collection altogether " circuit satisfy such condition fully.
Another benefit that adopts transistor " collection-cobasis altogether " or " collection-cobasis-collection " altogether altogether circuit to make oscillating circuit is: though circuit is highly stable because of importing and exporting homophase, it is but very easy to introduce positive feedback for transistor " collection-cobasis altogether ", " collection-cobasis-collection " altogether altogether.The transistor oscillating circuit that generally uses as the RC phase shift uses two-stage " cascode " to amplify or three grades of RC phase shifts usual, necessary.This will make additional phase shift increase, and circuit is difficult to be operated in stable state.It is quite different to vibrate with transistor " altogether collection-cobasis " or " collection-cobasis-collection " altogether altogether circuit work, and only needs one-level just can be competent at well.
Fig. 5
aAnd Fig. 5
bBe respectively pierce circuit figure by one-level transistor " altogether collection (leaking altogether)-cobasis " and one-level " collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether altogether circuit formation.
Consider Fig. 5
aOr Fig. 5
bTransistor Q in the oscillating circuit
1Work in can with " altogether collection " (leaking altogether) circuit configurations of signal source high degree of isolation, high input impedance, therefore, as long as from Q
1Base stage (drain electrode) inject a low frequency signal, just these two oscillating circuits can be made easily two amplitude-modulated signal reflectors that work in high resistant output or low-resistance output respectively.
Embodiment 4
Fig. 6
aIt is a transistor " collection (leaking altogether)-cobasis altogether " single armed output audio power amplifier circuit.
This circuit has only used the one-level amplification:
Adopt high voltage supply and high-power double pole triode two pipes of high back-pressure in parallel for obtaining high voltage gain and adding high-power output, circuit output " cobasis " configuration circuits partly, wherein, R
cIt is the collector current equalizing resistance of efferent duct in parallel.
Mainly play the effect of impedance conversion and enough current gains be provided as input " collection altogether " (leaking altogether) configuration circuits partly because its supply power voltage is very low and |+E
c|＞＞|-E
c| so the power that input partly consumes is little.
Base resistance R
bOn the electric current series connection negative feedback of 12dB is arranged, as collector current I
c=120mA, collector electrode pay(useful) load R
_ L＇=2400 Ω, when input signal is 0.78V, at the secondary R of output transformer
_ LCan obtain the maximum power output of 18W in the load of=8 Ω.
Fig. 6
bIt is a audio-frequency power amplifier circuit of forming by transistor " altogether collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether amplifying circuit.
Circuit is made up of one-level transistor " altogether collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether amplifying circuit, has very good high frequency characteristics.
" collection (leaking altogether)-cobasis-collection (leaking altogether) " altogether altogether amplifying circuit output is Low ESR because transistor, so output can directly be used loud speaker to do load and needn't do impedance conversion by output transformer.
When being 0.32V or 0.45V, in the load of 8 Ω or 4 Ω, can obtain the undistorted output of 13W by parameter among the figure and input signal.
Embodiment 5
Fig. 7 is a audio-frequency power amplifier circuit of being made up of complementary transistor " collection (leaking altogether)-cobasis altogether " amplifying circuit with conventional transistor circuit-mode.
Circuit is made up of one-level complementary transistor " collection (leaking altogether)-cobasis altogether " amplifying circuit.
Under " cascode " configuration condition, along with the rising of operating frequency, the symmetry of high-power complementary pair pipe characterisitic parameter will be damaged gradually.High-power complementary pair pipe is subjected to the restriction of prior art, frequency of utilization f
βCan not do very highly; Therefore, want under " cascode " configuration condition, to realize that the high-gain complementary push-pull linear power amplification of upper frequency is very difficult.
Transistor complementary pair pipe work in " cobasis " configuration with the frequency of utilization parameter from f
βBring up to f
αThe time also with the f of complementary pair pipe
αThe symmetry of parameter continues to extend to front end, thereby the high-gain complementary push-pull linear power that makes high-power complementary pair pipe be used for upper frequency zooms into for possibility.
The complementary power output stage of traditional transistor generally adopts emitter-base bandgap grading output, voltage gain perseverance less than 1, requires the higher promotion voltage of prime output, and this just makes the progression of amplifier at least secondary will be arranged.This routine complementary transistor " altogether collection (leaking altogether)-cobasis " audio-frequency power amplifier is quite different: it not only can have with the equal current gain of the complementary emitter power output stage of conventional transistor but also also can have the voltage gain more than the 24dB at least simultaneously, corresponding to the input sensitivity of this audio-frequency power amplifier below 1V, and the audio signal of our normally used compact disc or video disc player, their output is all more than 1V, thus more than the two driving be unchallenged.
Embodiment 6
Fig. 8 is that the transistor that a final stage works under " collection (leaking altogether)-cobasis altogether " both-end input, the both-end output state is recommended the output audio power amplifier circuit.
Then export one group of anti-phase each other driving signal as the traditional differential circuit of the single-ended input of prestage, both-end output is mainly negative; For the gain that reduces distortion, this grade is restricted to 12dB.Final stage " collection (leaking altogether)-cobasis altogether " is recommended the power output amplification and is removed resistance R
bThe electric current series connection negative feedback of last 12dB still has the voltage gain of 24dB outward.
As static set electrode current I
c=100mA, collector electrode-collector electrode pay(useful) load R
_ L＇=2400 Ω, input signal are 039V, maximum collector current I
CmaxDuring for 300mA, at the secondary R of output transformer
_ LCan obtain the maximum undistorted output of 68W in the load of=8 Ω.
Be not difficult to find out: Fig. 6, good characteristic that Fig. 8 circuit had can compare favourably with the vacuum tube audio-frequency power amplifier that begin again in recent years to get damp again fully, the demeanour of their not only sufficient tool vacuum tube amplifying circuits, but more than corresponding vacuum circuit for succinct.
In sum: transistor " collection-cobasis altogether " amplifying circuit, be the amplifying circuit that is formed by transistor " collection altogether ", " cobasis " two kinds of basic configuration serial connections, it amplifies branch with common one-level and is finished by transistorized " collection altogether ", " cobasis " two kinds of basic configuration serial connections.With " altogether collection " configuration with the input impedance that improves circuit, take over from the past and set a new course for the future, reduce noise, spread bandwidth, and provide current gain; Realize the wide-band linearity amplification of low noise, low distortion, high voltage gain with " cobasis " configuration.The advantage of sort circuit set transistor " collection altogether ", " cobasis " two kinds of basic configurations is the whole body: have high input impedance, existing higher current gain, not only have very big voltage gain, wideband sound, low noise, linear good, working stability, be difficult for self-excitation and but also high conversion rate is arranged, be all to be suitable for a kind of new-type circuit of using from Detection of Weak Signals, linear integrated circuit and even high-frequency, high-power vibration or emission.The characterisitic parameter of sort circuit and vacuum circuit quite similar replaces vacuum tube as H so can yet be regarded as again
i-F
iA kind of good method of audio-frequency amplification or high-frequency, high-power emission; And transistor " altogether collection-cobasis-altogether collection " amplifying circuit has only used one-level to amplify just to have reached easily in the past the set objective that must amplify with two high resistant input, low distortion, low noise, low phase shift, high-gain, high conversion rate, the wide-band linearity that still are difficult to realize to three-stage amplifier, thus not only be in addition Low ESR output it than the transistor amplifying circuit that " is total to collection-cobasis " but also have more purposes widely.
Claims (2)
1, a kind of transistor " altogether collection---cobasis " amplifying circuit is characterized in that: sort circuit is connected in series transistorized " collection altogether ", " cobasis " two kinds of basic configuration circuit to form by the mode of " collection---cobasis altogether " circuit and makes one-level and amplify; Wherein: the collector electrode of " altogether collection " basic configuration circuit transistor connects the signal input part of the one-level amplifier that power supply, base stage form as serial connection, the base stage of " cobasis " basic configuration circuit transistor exchanges the signal output part of the one-level amplifier that ground connection, collection earth polar then form as serial connection and is connected to the other end of power supply by load, " collection altogether " emitter of basic configuration circuit transistor directly links to each other with the emitter of " cobasis " basic configuration circuit transistor, makes " collection altogether ", " cobasis " two basic configuration circuit be serially connected with between the power supply mutually.
2, a kind of transistor " collection---cobasis---collects altogether altogether " amplifying circuit, it is characterized in that: sort circuit seals in " collection altogether " configuration circuits altogether again on the basis of transistor " collection---cobasis " amplifying circuit, transistorized " collection altogether ", " cobasis " two kinds of basic configuration circuit is connected in series by the mode of " collection---cobasis---collection " altogether altogether makes one-level and amplify; Wherein: the collector load that is used as common base configuration circuit transistor in the basic transistor of serial connection " collection---the cobasis altogether " amplifying circuit is replaced by a transistor " collection altogether " configuration circuits, should " collection altogether " transistorized base stage of configuration circuits exchange and connect the transistorized collector electrode of " cobasis " configuration circuits, collector electrode connects the other end of power supply, emitter then becomes the output of " collection---cobasis---collects altogether altogether " the one-level amplifier that forms after the serial connection again, and be connected to the transistorized collector electrode of " cobasis " configuration circuits through load, make " collection---cobasis altogether " amplifying circuit with should " collect " configuration circuits altogether and be serially connected with between the power supply again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB99121322XA CN1138337C (en) | 1999-10-08 | 1999-10-08 | Common collector-common base and common collector-common base-common collector transistor amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB99121322XA CN1138337C (en) | 1999-10-08 | 1999-10-08 | Common collector-common base and common collector-common base-common collector transistor amplifier circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1269633A CN1269633A (en) | 2000-10-11 |
| CN1138337C true CN1138337C (en) | 2004-02-11 |
Family
ID=5281934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB99121322XA Expired - Fee Related CN1138337C (en) | 1999-10-08 | 1999-10-08 | Common collector-common base and common collector-common base-common collector transistor amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1138337C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101729027B (en) * | 2009-10-30 | 2012-09-05 | 华南理工大学 | High gain amplifier circuit |
| CN102832883B (en) * | 2012-08-30 | 2015-08-12 | 海能达通信股份有限公司 | Voltage-controlled oscillating circuit and Wireless Telecom Equipment |
| CN104459359A (en) * | 2014-12-14 | 2015-03-25 | 东北电力大学 | VDMOS device low-frequency noise measuring device |
| US10014829B2 (en) * | 2015-12-23 | 2018-07-03 | Omni Design Technologies, Inc. | Non-inverting amplifier circuits |
| CN107196612B (en) * | 2017-05-22 | 2019-07-02 | 电子科技大学 | A kind of push-pull amplifier with high gain characteristics |
-
1999
- 1999-10-08 CN CNB99121322XA patent/CN1138337C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1269633A (en) | 2000-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102820857A (en) | Transimpedance amplifier with broad band and high gain, design method and amplifier chip | |
| CN1909364A (en) | BTL-type amplifier circuit | |
| CN1758533A (en) | Variable gain amplifier | |
| CN101056093A (en) | Variable gain amplifier | |
| CN1138337C (en) | Common collector-common base and common collector-common base-common collector transistor amplifier circuit | |
| CN1407716A (en) | Gain variable amplifier | |
| CN1234649A (en) | Gain-changeable amplifier circuit | |
| CN104333335B (en) | Adaptive bipolar transistor power amplifier linearity biasing circuit | |
| CN1996748A (en) | A balanced amplifier | |
| CN103944521B (en) | A kind of electric current injecting type audio-frequency power amplifier | |
| CN1770627A (en) | Automatic feedback control method for self-adaptive setover variable gain low noise amplifier | |
| CN1619950A (en) | Variable amplifier and mobile wireless terminal using same | |
| CN206743199U (en) | A kind of high power audio-frequency power amplifier | |
| CN1288839C (en) | Fully differential, variable-gain amplifier and a multidimensional amplifier arrangement | |
| CN205356278U (en) | MOS manages amplifier circuit | |
| CN111277234B (en) | Power amplifier | |
| CN2849790Y (en) | Auxiliary circuit, voltage regulator and circuit apparatus for improving rejection ratio of low frequency power | |
| CN206547077U (en) | A kind of microphone preamplifier | |
| CN1682438A (en) | Push-pull amplifier and frequency conversion circuit | |
| CN2422778Y (en) | Electric current audio frequency amplifier | |
| CN206251224U (en) | Amplifier circuit for sound frequency signal and television set | |
| CN211701985U (en) | Linear high-gain heterojunction bipolar transistor power amplifier | |
| CN210007676U (en) | audio amplifying circuit based on operational amplifier | |
| CN204633718U (en) | Power amplifier device | |
| CN203788269U (en) | Optical detection drive circuit used for optical coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040211 Termination date: 20091109 |