CN205356278U - MOS manages amplifier circuit - Google Patents
MOS manages amplifier circuit Download PDFInfo
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- CN205356278U CN205356278U CN201620110185.6U CN201620110185U CN205356278U CN 205356278 U CN205356278 U CN 205356278U CN 201620110185 U CN201620110185 U CN 201620110185U CN 205356278 U CN205356278 U CN 205356278U
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Abstract
The utility model discloses a MOS manages amplifier circuit, manage Q1, triode VT2 and triode VT3 including resistance R1, electric capacity C1, triode VT1, MOS, incoming signal vi is connected to triode VT1 base, electric capacity C2 and triode VT2 projecting pole are connected respectively to triode VT1 projecting pole, triode VT1 collecting electrode is connecting resistance R1 respectively, electric capacity C1 and triode VT4 base, triode VT2 collecting electrode is connecting resistance R2 and triode VT3 base respectively, triode VT3 grounded collector, triode VT3 projecting pole is connecting resistance R3 and triode VT4 projecting pole respectively, triode VT5 collecting electrode is connected to triode VT4 collecting electrode. The utility model discloses MOS manages amplifier circuit adopts triode cooperation MOS pipe to use, and VT5, R4, R6 constitute the constant voltage source circuit, for VT6, VT7 provide appropriate DC bias, prevents that Q1, Q2 from producing crossover distortion, and stability is high.
Description
Technical field
This utility model relates to a kind of amplifying circuit, specifically a kind of metal-oxide-semiconductor amplifying circuit.
Background technology
Differential amplifier circuit is again difference channel, it can not only amplify AC signal effectively, and can effectively reduce the null offset owing to power-supply fluctuation and transistor vary with temperature and cause, thus obtain and be widely applied, particularly substantial amounts of being applied to integrated operational amplifier circuit, it is often used as the prestage of multistage amplifier.
Existing differential amplifier adopts one big common resistance of connection on two transistor emitters mostly, thus keeping the stability of triode operation point, but the negative supply needed is very low, so could allow triode emission pole tension and the base voltage will not be significantly high, now with the extensive utilization of metal-oxide-semiconductor, a lot of designs begin to use audion and metal-oxide-semiconductor cooperation to be amplified, but, a lot of existing designs all also exist the phenomenon of metal-oxide-semiconductor intermodulation distortion, and the amplifier stability obtained is relatively low.
Utility model content
The purpose of this utility model is in that to provide a kind of metal-oxide-semiconductor amplifying circuit, with the problem solving to propose in above-mentioned background technology.
For achieving the above object, this utility model provides following technical scheme:
A kind of metal-oxide-semiconductor amplifying circuit, including resistance R1, electric capacity C1, audion VT1, metal-oxide-semiconductor Q1, audion VT2 and audion VT3, described audion VT1 base stage connects input signal Vi, audion VT1 emitter stage connects electric capacity C2 and audion VT2 emitter stage respectively, audion VT1 colelctor electrode connects resistance R1 respectively, electric capacity C1 and audion VT4 base stage, audion VT2 colelctor electrode connects resistance R2 and audion VT3 base stage respectively, audion VT3 grounded collector, audion VT3 emitter stage connects resistance R3 and audion VT4 emitter stage respectively, audion VT4 colelctor electrode connecting triode VT5 colelctor electrode, audion VT5 base stage connects resistance R4 and resistance R6 respectively, the resistance R4 other end connects the electric capacity C1 other end and audion VT6 base stage respectively, resistance R6 other end connecting triode VT7 base stage, audion VT7 emitter stage connects resistance R7, the G pole of the resistance R7 other end connecting triode VT6 emitter stage and metal-oxide-semiconductor Q1 respectively, the D pole of metal-oxide-semiconductor Q1 connects power supply VCC respectively, the resistance R3 other end, the resistance R2 other end and the resistance R1 other end, the S pole of metal-oxide-semiconductor Q1 connects output end vo respectively, the D pole of metal-oxide-semiconductor Q2 and resistance R5, resistance R5 other end connecting triode VT2 base stage, the G pole of metal-oxide-semiconductor Q2 is connecting triode VT7 colelctor electrode and resistance R8 respectively, the resistance R8 other end connects the S pole of metal-oxide-semiconductor Q2 respectively, audion VT5 emitter stage and the electric capacity C2 other end ground connection.
As this utility model further scheme: described power supply VCC voltage is 5V.
Compared with prior art, the beneficial effects of the utility model are: this utility model metal-oxide-semiconductor amplifying circuit adopts audion to coordinate metal-oxide-semiconductor to use, and VT5, R4, R6 form constant voltage power supply circuit, provide suitable direct current biasing for VT6, VT7, preventing Q1, Q2 from producing intermodulation distortion, stability is high.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of metal-oxide-semiconductor amplifying circuit.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of this utility model, rather than whole embodiments.Based on the embodiment in this utility model, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of this utility model protection.
Refer to Fig. 1, in this utility model embodiment, a kind of metal-oxide-semiconductor amplifying circuit, including resistance R1, electric capacity C1, audion VT1, metal-oxide-semiconductor Q1, audion VT2 and audion VT3, described audion VT1 base stage connects input signal Vi, audion VT1 emitter stage connects electric capacity C2 and audion VT2 emitter stage respectively, audion VT1 colelctor electrode connects resistance R1 respectively, electric capacity C1 and audion VT4 base stage, audion VT2 colelctor electrode connects resistance R2 and audion VT3 base stage respectively, audion VT3 grounded collector, audion VT3 emitter stage connects resistance R3 and audion VT4 emitter stage respectively, audion VT4 colelctor electrode connecting triode VT5 colelctor electrode, audion VT5 base stage connects resistance R4 and resistance R6 respectively, the resistance R4 other end connects the electric capacity C1 other end and audion VT6 base stage respectively, resistance R6 other end connecting triode VT7 base stage, audion VT7 emitter stage connects resistance R7, the G pole of the resistance R7 other end connecting triode VT6 emitter stage and metal-oxide-semiconductor Q1 respectively, the D pole of metal-oxide-semiconductor Q1 connects power supply VCC respectively, the resistance R3 other end, the resistance R2 other end and the resistance R1 other end, the S pole of metal-oxide-semiconductor Q1 connects output end vo respectively, the D pole of metal-oxide-semiconductor Q2 and resistance R5, resistance R5 other end connecting triode VT2 base stage, the G pole of metal-oxide-semiconductor Q2 is connecting triode VT7 colelctor electrode and resistance R8 respectively, the resistance R8 other end connects the S pole of metal-oxide-semiconductor Q2 respectively, audion VT5 emitter stage and the electric capacity C2 other end ground connection；Described power supply VCC voltage is 5V.
Operation principle of the present utility model is: referring to Fig. 1, VT1 and VT2 and form differential input level, its circuit form is single ended input, both-end export structure, and the output of VT1 pipe is connected with the base stage of VT4；The output of VT2 pipe is connected with the emitter stage of VT4 through the Hyblid Buffer Amplifier of voltage follower of VT3, R3 composition, here insert voltage follower in order that the too low shortcoming of equiva lent impedance when overcoming emitter stage to input, VT4 and peripheral cell thereof constitute the interstage amplifier section of high-gain, VT6, VT7 constitute complementary symmetry circuit as driving stage, are used for driving Q1 and Q2 to constitute output stage；VT5, R4, R6 form constant voltage power supply circuit, and its effect is to provide suitable direct current biasing for VT6, VT7, to prevent Q1, Q2 from producing intermodulation distortion.
It is obvious to a person skilled in the art that this utility model is not limited to the details of above-mentioned one exemplary embodiment, and when without departing substantially from spirit of the present utility model or basic feature, it is possible to realize this utility model in other specific forms.Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, scope of the present utility model is limited by claims rather than described above, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in this utility model.Any accompanying drawing labelling in claim should be considered as the claim that restriction is involved.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, and the technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that.
Claims (2)
1. a metal-oxide-semiconductor amplifying circuit, including resistance R1, electric capacity C1, audion VT1, metal-oxide-semiconductor Q1, audion VT2 and audion VT3, it is characterized in that, described audion VT1 base stage connects input signal Vi, audion VT1 emitter stage connects electric capacity C2 and audion VT2 emitter stage respectively, audion VT1 colelctor electrode connects resistance R1 respectively, electric capacity C1 and audion VT4 base stage, audion VT2 colelctor electrode connects resistance R2 and audion VT3 base stage respectively, audion VT3 grounded collector, audion VT3 emitter stage connects resistance R3 and audion VT4 emitter stage respectively, audion VT4 colelctor electrode connecting triode VT5 colelctor electrode, audion VT5 base stage connects resistance R4 and resistance R6 respectively, the resistance R4 other end connects the electric capacity C1 other end and audion VT6 base stage respectively, resistance R6 other end connecting triode VT7 base stage, audion VT7 emitter stage connects resistance R7, the G pole of the resistance R7 other end connecting triode VT6 emitter stage and metal-oxide-semiconductor Q1 respectively, the D pole of metal-oxide-semiconductor Q1 connects power supply VCC respectively, the resistance R3 other end, the resistance R2 other end and the resistance R1 other end, the S pole of metal-oxide-semiconductor Q1 connects output end vo respectively, the D pole of metal-oxide-semiconductor Q2 and resistance R5, resistance R5 other end connecting triode VT2 base stage, the G pole of metal-oxide-semiconductor Q2 is connecting triode VT7 colelctor electrode and resistance R8 respectively, the resistance R8 other end connects the S pole of metal-oxide-semiconductor Q2 respectively, audion VT5 emitter stage and the electric capacity C2 other end ground connection.
2. a kind of metal-oxide-semiconductor amplifying circuit according to claim 1, it is characterised in that described power supply VCC voltage is 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620110185.6U CN205356278U (en) | 2016-02-03 | 2016-02-03 | MOS manages amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620110185.6U CN205356278U (en) | 2016-02-03 | 2016-02-03 | MOS manages amplifier circuit |
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| Publication Number | Publication Date |
|---|---|
| CN205356278U true CN205356278U (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620110185.6U Expired - Fee Related CN205356278U (en) | 2016-02-03 | 2016-02-03 | MOS manages amplifier circuit |
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| CN (1) | CN205356278U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505986A (en) * | 2016-09-30 | 2017-03-15 | 华北水利水电大学 | A kind of differential signal output circuit |
| CN107196612A (en) * | 2017-05-22 | 2017-09-22 | 电子科技大学 | A kind of push-pull amplifier with high gain characteristics |
-
2016
- 2016-02-03 CN CN201620110185.6U patent/CN205356278U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505986A (en) * | 2016-09-30 | 2017-03-15 | 华北水利水电大学 | A kind of differential signal output circuit |
| CN106505986B (en) * | 2016-09-30 | 2019-05-03 | 华北水利水电大学 | A kind of differential signal output circuit |
| CN107196612A (en) * | 2017-05-22 | 2017-09-22 | 电子科技大学 | A kind of push-pull amplifier with high gain characteristics |
| CN107196612B (en) * | 2017-05-22 | 2019-07-02 | 电子科技大学 | A kind of push-pull amplifier with high gain characteristics |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160629 Termination date: 20170203 |