CN113805428A - Proximity exposure photomask - Google Patents
Proximity exposure photomask Download PDFInfo
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- CN113805428A CN113805428A CN202110618642.8A CN202110618642A CN113805428A CN 113805428 A CN113805428 A CN 113805428A CN 202110618642 A CN202110618642 A CN 202110618642A CN 113805428 A CN113805428 A CN 113805428A
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- 238000002834 transmittance Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 8
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 230000010363 phase shift Effects 0.000 abstract 6
- 230000000694 effects Effects 0.000 description 14
- 239000011651 chromium Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photomask capable of stably resolving a fine hole pattern. The photomask includes a transmission portion exposing the transparent substrate, and a first phase shift portion and a second phase shift portion for inverting the phase of the exposure light so as to surround the transmission portion. The second phase shift portion is interposed between the first phase shift portion and the transmission portion, and has a lower transmittance for the exposure light than the first phase shift portion. In addition, the second phase shifter may be formed of a laminated structure of the phase shift film of the first phase shifter and the semi-transmissive film.
Description
Technical Field
The present invention relates to a proximity exposure photomask.
Background
For a photomask used for manufacturing a pattern for a black matrix, the line width and pitch width of the pattern are required to be narrower as the pattern is miniaturized, and various techniques corresponding to the line width and pitch width are developed. For example, in the case of use in color filters of large flat panel displays and the like, it is premised that g-rays (wavelength 436nm), h-rays (wavelength 405nm), i-rays (wavelength 365nm), and the like are used as exposure wavelengths, and therefore how to accurately form line widths equal to or smaller than the resolution limit becomes important.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2016-004174
Patent document 2: japanese patent laid-open publication No. 2013-235036
Patent document 3: japanese laid-open patent application No. 2010-128440
Disclosure of Invention
Technical problem to be solved by the invention
In a proximity exposure photomask for forming a black matrix using a negative photoresist, when a "thin line pattern" having a line width smaller than that of the thin line pattern and a "thick line pattern" having a line width thicker than that of the thin line pattern coexist, the thick line pattern is satisfactorily resolved, and the thin line pattern is poorly resolved. This is particularly remarkable when the line width of the thin line pattern is equal to or less than the resolution limit of the exposure wavelength.
Fig. 7 shows a photomask 50 of a negative pattern in which the thin line pattern 1 and the thick line pattern 2 are mixed. The photomask 50 has a pattern B of a light-shielding film formed on a transparent substrate. If the diffraction effect is neglected, the exposure light cannot pass through the pattern B of the light shielding film but passes only through the light transmitting portion W. The narrower the line width, the greater the diffraction effect. The diffraction effect is also increased or decreased by adjusting the proximity gap (proximity gap) and the half angle of parallel light (Collimation angle).
Fig. 6 is a graph showing the exposure intensity of the thin line pattern 1 and the thick line pattern 2. As shown in the thin line pattern 1, even when the line width of the thin line pattern is equal to or less than the resolution limit of the exposure wavelength, the diffraction effect is improved by using a pattern having an opening width wider than the target line width in advance and adjusting the close gap, and the thin line pattern as designed can be resolved.
However, focusing on the thick line pattern 2 under the same exposure conditions, it is known that: the exposure intensity at both ends (edge portions) of the thick line pattern 2 is increased, while the exposure intensity near the center portion of the pattern is decreased. This is considered to be a phenomenon that diffracted light cannot reach the center of the line width in the case of a thick line pattern. As a result, the following problems occur: in the case of a negative photoresist film, the curing of the resist at the center of the pattern becomes insufficient, and the pattern cannot be formed depending on the conditions.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a photomask capable of eliminating pattern nonuniformity due to a difference in intensity of diffracted light when two types of line patterns (space patterns) having different line widths are simultaneously formed.
Note that the reason why the "line pattern (space pattern)" is adopted is that not the "line pattern" but the "space pattern" when the pattern forming the black matrix is viewed from the mask side. In the present specification, the pattern forming the black matrix is hereinafter referred to as a "spatial pattern".
Means for solving the technical problem
The photomask according to the present invention is a proximity exposure photomask for forming a black matrix, the photomask including a pattern formation region in which only one of a light-shielding portion formed of a pattern of a light-shielding film and a semi-transmissive portion formed of a pattern of a semi-transmissive film is formed, the photomask further including a light-shielding layer formed of a pattern of a light-shielding film, and the semi-transmissive film having a light-transmissive layer formed of a pattern of a semi-transmissive film
A first auxiliary pattern and a second auxiliary pattern having a size not resolved by exposure light are provided at a boundary portion between the light shielding portion and the semi-transmissive portion in the pattern forming region,
the pattern of the light shielding film is a pattern shape which defines at least two kinds of space patterns having different line widths after exposure,
the two auxiliary patterns are in the shape of patterns with certain line width, so that the uniformity of the exposure intensity is relatively improved when the boundary part is exposed after the exposure compared with the case without the auxiliary patterns, and the two auxiliary patterns are in the shape of patterns with certain line width
The first auxiliary pattern is formed at an end of the space pattern having the first line width,
the second auxiliary pattern is formed at the end of the space pattern with a second line width thicker than the first line width,
the second auxiliary pattern has a thicker line width than the first auxiliary pattern.
The "semi-transmissive film" and the "light-shielding film" have a magnitude relation of relatively large transmittance, and the light-shielding rate of the light-shielding film is not necessarily 100% with respect to the exposure light. The positional relationship between the semi-permeable film and the light-shielding film may be "top half (half) type" in which the semi-permeable film is formed on the upper layer of the light-shielding film, or "bottom half type" in which the semi-permeable film is formed on the opposite layer. However, it is considered that there are differences in manufacturing methods, for example, in the case of the top half type, accurate positioning (alignment) is required at the time of the 2 nd exposure, and the like, and there are also short points.
Here, the "first line width" means a line width that is as thin as possible to exhibit an effect of improving the light intensity distribution at the exposure wavelength, and the second line width means a line width that is thicker than the first line width and does not exhibit such an effect. Namely, the technical significance of the invention lies in: when a grid pattern (negative pattern) which is supposed to be used for a photomask for a proximity exposure machine is formed in a black matrix layer, the difference in exposure intensity which occurs when a thin line pattern exhibiting a significant effect of improving the light intensity distribution at the exposure wavelength and a thick line pattern not having the effect are mixed is averaged.
In the above configuration, the first auxiliary pattern and the second auxiliary pattern may have the same transmittance. This is because the first auxiliary pattern and the second auxiliary pattern may be simultaneously formed on the same layer of the upper layer or the lower layer of the light-shielding film.
In the above configuration, the transmittance of the first auxiliary pattern and the second auxiliary pattern may be 30% to 50%. This is due to: the transmittance of the auxiliary pattern needs to be smaller than that of the light shielding film, and the results of the simulation show that: if the transmittance is in this range, the exposure intensity can be made uniform.
In the above configuration, the line widths of the first auxiliary pattern and the second auxiliary pattern may be 1.0 μm to 6.0 μm. The fine line pattern has a line width that exhibits a significant effect of improving the light intensity distribution at the exposure wavelength, and for example, when the line width is about 5 to 15 μm in the case of g-ray, the line width of the first auxiliary pattern is about 1.0 μm. Since the space pattern is formed in the exposed portion of the transparent substrate and the boundary portion with the light shielding film is present on both sides, the first auxiliary pattern is formed on both ends (both sides) of the space pattern. The width of the second auxiliary pattern is not particularly limited, and for example, when the width is about 20 to 60 μm, the line width of the second auxiliary pattern is about 3 to 6 μm at both ends.
In the above configuration, the phase difference between the first auxiliary pattern and the second auxiliary pattern may be 5 ° or less. In the above configuration, the first auxiliary pattern and the second auxiliary pattern may be formed of an oxide of chromium. In the above configuration, the first auxiliary pattern and the second auxiliary pattern may be formed of a semi-transmissive film having a small dependency of the exposure wavelength on the transmittance, for example, a semi-transmissive film having a transmittance of less than 1% among at least g-rays, h-rays, and i-rays. Note that, as a document which refers to a semi-permeable membrane having such characteristics, patent document 3 and the like are included.
Effects of the invention
According to the present invention, it is possible to provide a photomask capable of eliminating pattern nonuniformity due to a difference in intensity of diffracted light when two kinds of space patterns having different line widths are simultaneously formed.
Drawings
Fig. 1 shows a part of a pattern of a negative photomask 40 for proximity exposure including a thin line pattern having a line width of 9 μm and a thick line pattern having a line width of 40 μm.
Fig. 2(a) shows an enlarged view of the region (i) in fig. 1, and fig. 2(B) shows an enlarged view of the region (ii) in fig. 1.
Fig. 3 is a graph showing the exposure intensity of g-rays applied to the photomask 40 provided with two types of assist patterns.
Fig. 4 shows the results of examining the relationship between the transmittance of g-rays and the film thickness.
Fig. 5 a is a graph showing the exposure intensity of a binary mask (photomask 50) in which no assist pattern is used, by color tone analysis. Fig. 5(B) is a graph showing the exposure intensity of the photomask 40 provided with the auxiliary patterns 10 and 20 by color.
Fig. 6 is a graph showing the exposure intensity of the thin line pattern 1 and the thick line pattern 2.
Fig. 7 shows a photomask 50 of a negative pattern in which the thin line pattern 1 and the thick line pattern 2 are mixed.
Detailed Description
(principle for solving problems)
The basic idea of the invention is that: in order to suppress the intensity of exposure light concentrated on a thin line pattern when the diffracted light is amplified on the exposure machine side, and to obtain uniform exposure light at both end portions and a central portion of a thick line pattern, an assist pattern is provided. The auxiliary patterns are set to have a size corresponding to the line width, and are each composed of a semi-transparent film having a predetermined width and not resolved by an exposure device.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are not intended to provide a limiting explanation in the spirit of the present invention. The same reference numerals are used for the same or similar members, and the description thereof may be omitted.
(embodiment mode 1)
Fig. 1 shows a part of a pattern of a negative-type proximity exposure photomask 40 including a thin line pattern having a line width of 9 μm and a thick line pattern having a line width of 40 μm as an example. Auxiliary patterns 10 and 20 having different line widths are formed at the respective ends of the thin line pattern 1 and the thick line pattern 2. The auxiliary pattern 10 formed at the end of the thin line pattern 1 is configured to have a line width smaller than that of the auxiliary pattern 20 formed at the end of the thick line pattern 20.
Fig. 2(a) shows an enlarged view of the region (i) in fig. 1, and fig. 2(B) shows an enlarged view of the region (ii) in fig. 1. The line width of the auxiliary pattern 10 is 1.0 μm, and the line width of the auxiliary pattern 20 is 4.0 μm. This numerical example is a configuration example of obtaining a pattern having a line width of about 5.0 μm in a final target size of a thin line pattern in a g-ray exposure machine. The auxiliary pattern uses a semi-transparent film having a transmittance of about 40% for g-rays.
Fig. 3 is a graph showing the exposure intensity of g-rays applied to the photomask 40 provided with two types of assist patterns. From this graph, it can be seen that: the peak near the center of the thin line pattern 1 and the peaks near both ends of the thick line pattern 2 can be suppressed, and the exposure intensity near the center of the thick line pattern can be increased to obtain a substantially uniform exposure intensity as a whole. However, the light intensity distribution improvement effect must be maintained with respect to the exposure wavelength. If the intensity curve is narrow and steep, a "thin line" can be formed, but if the intensity curve sags and the tail widens, a thin line cannot be formed.
As described above, according to the present embodiment, the semi-transmissive film having a predetermined width corresponding to the line width is provided at both end portions (edge portions) of the space pattern, whereby the exposure intensity can be made uniform while maintaining the effect of improving the light intensity distribution with respect to the exposure wavelength.
< semi-permeable Membrane >
As the semi-permeable film, an oxide of chromium Cr (Cr) may be used2O3)。
Fig. 4 shows the results of examining the relationship between the transmittance of g-rays and the film thickness. When the relationship between the film thickness and the transmittance is expressed by a logarithmic approximation formula, the transmittance Tr for g-rays exhibits the following result:
Tr＝-18.83ln+78.966
the semi-permeable film can be used as a film for replacing chromium Cr oxide (Cr)2O3) WhileThe metal is chromium, chromium nitride film, molybdenum silicide, tantalum, aluminum, silicon, nickel, or the like, or metal nitride, metal carbide, or the like of chromium, molybdenum silicide, tantalum, aluminum, silicon, nickel, or the like. In particular, chromium and chromium nitride are preferable because a flat translucent film having a flat transmittance distribution in the wavelength range of 300nm to 450nm can be formed.
< effects of the embodiment >
Fig. 5 a is a graph showing the exposure intensity of a binary mask (photomask 50) in which no assist pattern is used at all, by tone analysis. Although black and white are not clear, the exposure intensity of the thick line pattern is low in the center portion, and the result that the state can be understood is shown by referring to the graph shown in fig. 6.
On the other hand, fig. 5(B) is a graph showing the exposure intensity of the photomask 40 provided with the auxiliary patterns 10 and 20 by color tone analysis. Both the thin line pattern 1 and the thick line pattern 2 are exposed to light with sufficient exposure intensity. Therefore, the following steps are carried out: when the color tone is analyzed, uniform exposure intensity is exhibited without color tone separation. If the graph shown in fig. 3 is referred to, a result that the state can be understood is presented.
< method of production >
The semi-transmissive film constituting the auxiliary pattern may be formed on the upper layer of the light-shielding film or on the lower layer of the light-shielding film, but is preferably formed on the upper layer of the light-shielding film from the viewpoint of ensuring dimensional accuracy. That is, the photomask 40 described above can be obtained by adding a step of forming an auxiliary pattern to a normal binary mask manufacturing method. The details of the manufacturing method will be described in embodiment 2. In this case, since the second exposure is required, alignment is required at the time of the second exposure. For example, when forming the pattern of the light shielding film, an alignment mark may be provided outside the pattern region in advance, and at the time of the second patterning, the alignment mark may be used for positioning to form the first auxiliary pattern and the second auxiliary pattern. This process is the same as the process for manufacturing an upper halftone multi-tone mask in which a semi-transmissive film is formed on a pattern of a light-shielding film. The method of alignment is not limited to the above method.
In the case of a film in which a semi-transmissive film is formed below a light-shielding film, the semi-transmissive film is formed below a transparent substrate, and then patterned to form a light-shielding film in a predetermined portion, or an Etching Stopper (Etching Stopper) film is formed between the light-shielding film and the semi-transmissive film, or a material having Etching selectivity is used to form a pattern on the light-shielding film and the semi-transmissive film.
Industrial applicability
According to the present invention, even when a fine line pattern and a coarse line pattern having a line width that significantly exhibits an effect of improving a light intensity distribution at an exposure wavelength are mixed in a proximity exposure photomask for forming a black matrix using a negative photoresist, a uniform final product can be obtained. As a result, insufficient curing of the resist due to the difference in strength can be prevented, and the yield can be improved, which has a great industrial applicability.
Description of the reference numerals
1 fine line pattern
2 thick line pattern
20 first auxiliary pattern
30 second auxiliary pattern
40. 50 photo mask
B pattern of light-shielding film
W light transmission part
i. ii region
Claims (7)
1. A photomask for proximity exposure for forming a black matrix, comprising a substrate,
the photomask includes a pattern forming region in which only one of a light-shielding portion composed of a pattern of a light-shielding film and a semi-transmissive portion composed of a pattern of a semi-transmissive film is formed, and
a first auxiliary pattern and a second auxiliary pattern having a size not resolved by exposure light are provided at a boundary portion between the light-shielding portion and the semi-transmissive portion in the pattern forming region,
the pattern of the light shielding film is a pattern shape which specifies at least two kinds of space patterns having different line widths after exposure,
the two auxiliary patterns are both in the shape of a pattern with a certain line width, so that the uniformity of the exposure intensity at the time of exposure of the boundary portion after exposure is relatively improved compared with the case without the auxiliary pattern, and
the first auxiliary pattern is formed at an end of the space pattern of the first line width,
the second auxiliary pattern is formed at an end of the space pattern having a second line width thicker than the first line width,
the second auxiliary pattern has a thicker line width than the first auxiliary pattern.
2. The photomask of claim 1, wherein the first auxiliary pattern and the second auxiliary pattern have equal transmittance.
3. The photomask according to claim 1 or 2, wherein the transmittance of the first auxiliary pattern and the second auxiliary pattern is 30% to 50%.
4. The photomask according to any one of claims 1 to 3, wherein the line widths of the first auxiliary pattern and the second auxiliary pattern are 1.0 μm to 6.0 μm.
5. The photomask according to any one of claims 1 to 4, wherein the phase difference between the first auxiliary pattern and the second auxiliary pattern is 5 ° or less.
6. The photomask according to any one of claims 1 to 5, wherein the first auxiliary pattern and the second auxiliary pattern are formed of chromium oxide.
7. The photomask according to any one of claims 1 to 4, wherein the first auxiliary pattern and the second auxiliary pattern have a small dependence of exposure wavelength on transmittance at least among g-rays, h-rays and i-rays.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020103242A JP7475209B2 (en) | 2020-06-15 | 2020-06-15 | Proximity exposure photomask |
| JP2020-103242 | 2020-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113805428A true CN113805428A (en) | 2021-12-17 |
| CN113805428B CN113805428B (en) | 2024-07-02 |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20210155361A (en) | 2021-12-22 |
| JP7475209B2 (en) | 2024-04-26 |
| TWI787852B (en) | 2022-12-21 |
| KR102618940B1 (en) | 2023-12-29 |
| JP2021196515A (en) | 2021-12-27 |
| TW202201119A (en) | 2022-01-01 |
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