TWI770736B - Photomask - Google Patents

Photomask Download PDF

Info

Publication number
TWI770736B
TWI770736B TW109145883A TW109145883A TWI770736B TW I770736 B TWI770736 B TW I770736B TW 109145883 A TW109145883 A TW 109145883A TW 109145883 A TW109145883 A TW 109145883A TW I770736 B TWI770736 B TW I770736B
Authority
TW
Taiwan
Prior art keywords
phase shift
film
transmittance
shift portion
semi
Prior art date
Application number
TW109145883A
Other languages
Chinese (zh)
Other versions
TW202138907A (en
Inventor
田中千惠
山田步實
齊藤隆史
Original Assignee
日商Ｓｋ電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｓｋ電子股份有限公司 filed Critical 日商Ｓｋ電子股份有限公司
Publication of TW202138907A publication Critical patent/TW202138907A/en
Application granted granted Critical
Publication of TWI770736B publication Critical patent/TWI770736B/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)

Abstract

本發明提供能夠穩定地解像微細的孔圖案的光掩模。該光掩模具備：露出透過性基板的透過部；以及包圍透過部的、將曝光光的相位反轉的第1相移部和第2相移部。第2相移部介於第1相移部與透過部之間，第2相移部對曝光光的透射率比第1相移部的透射率低。另外，第2相移部能夠由第1相移部的相移膜與半透過膜的層疊結構而構成。 The present invention provides a photomask capable of stably resolving a fine hole pattern. This photomask includes a transmissive portion exposing the transmissive substrate, and a first phase shift portion and a second phase shift portion surrounding the transmissive portion and inverting the phase of exposure light. The second phase shift portion is interposed between the first phase shift portion and the transmission portion, and the transmittance of the second phase shift portion to exposure light is lower than the transmittance of the first phase shift portion. In addition, the second phase shift portion can be constituted by a lamination structure of the phase shift film and the semi-permeable film of the first phase shift portion.

Description

光掩模 photomask

本發明涉及一種在光刻工序中所使用的光掩模。 The present invention relates to a photomask used in a photolithography process.

在用於製造平板顯示器等電子設備的光刻工序中使用光掩模。一直以來，用於將孔圖案轉印至光致抗蝕劑的光掩模使用的是具備遮光部和透過部、並且與孔圖案對應的部位成為透過部的二元掩模。 Photomasks are used in photolithography processes for manufacturing electronic devices such as flat panel displays. Conventionally, as a photomask for transferring a hole pattern to a photoresist, a binary mask including a light shielding portion and a transmitting portion, and a portion corresponding to the hole pattern serving as a transmitting portion has been used.

近年來，例如，為了能夠形成2[μm]以下的微細的孔圖案，提出了相移掩模作為用於孔的圖案化的光掩模。已知相移掩模與以往的二元掩模相比不僅具有分辨率的提高效果，而且還具有焦深(DOF)的改善效果。(例如參照專利文獻1的第4段落) In recent years, in order to be able to form a fine hole pattern of 2 [μm] or less, for example, a phase shift mask has been proposed as a photomask for patterning holes. It is known that a phase-shift mask has not only an effect of improving the resolution but also an effect of improving the depth of focus (DOF) compared with the conventional binary mask. (For example, refer to the fourth paragraph of Patent Document 1)

先前技術文獻 prior art literature

專利文獻 Patent Literature

專利文獻1：日本特開2018-163335號公報 Patent Document 1: Japanese Patent Laid-Open No. 2018-163335

但是，在使用相移掩模而將微細的孔圖案轉印至光致抗蝕劑的情況下，雖然可得到焦深的提高效果，但是需要高曝光量(Dose)。因此，具有曝光時間增大、曝光裝置的節拍時間增大的問題。 However, when a fine hole pattern is transferred to a photoresist using a phase shift mask, although the effect of improving the depth of focus can be obtained, a high exposure dose (Dose) is required. Therefore, there is a problem that the exposure time increases and the tact time of the exposure apparatus increases.

鑒於上述課題，本發明的目的在於提供能夠穩定地解像微細的孔圖案的光掩模。 In view of the above-mentioned problems, an object of the present invention is to provide a photomask capable of stably resolving a fine hole pattern.

本發明涉及的光掩模，其特徵在於，其具備透過部、第1相移部和第2相移部，所述第1相移部及第2相移部包圍所述透過部，所述第2相移部介於所述第1相移部與所述透過部之間，所述第2相移部及所述第1相移部將曝光光的相位反轉，所述第2相移部的透射率比所述第1相移部的透射率低。 The photomask according to the present invention is characterized in that it includes a transmissive portion, a first phase shift portion, and a second phase shift portion, wherein the first phase shift portion and the second phase shift portion surround the transmissive portion, and the A second phase shift portion is interposed between the first phase shift portion and the transmission portion, the second phase shift portion and the first phase shift portion invert the phase of exposure light, and the second phase shift portion The transmittance of the shift portion is lower than the transmittance of the first phase shift portion.

另外，本發明涉及的光掩模，其特徵在於，所述第1相移部的透射率為8~15%，所述第2相移部的透射率為3~7%。 Further, in the photomask according to the present invention, the transmittance of the first phase shift portion is 8 to 15%, and the transmittance of the second phase shift portion is 3 to 7%.

另外，本發明涉及的光掩模，其特徵在於，所述第1相移部及所述第2相移部的相移量為160[°]以上且210[°]以下的範圍。 The photomask according to the present invention is characterized in that the phase shift amount of the first phase shift portion and the second phase shift portion is in a range of 160 [°] or more and 210 [°] or less.

通過設為這樣的構成，從而可以提供能夠改善光刻工序中的DOF及所需曝光量的光掩模。 By setting it as such a structure, it becomes possible to provide the photomask which can improve the DOF and the required exposure amount in a photolithography process.

另外，本發明涉及的光掩模，其特徵在於，所述第1相移部的相移量為160[°]以上且190[°]以下的範圍，所述第2相移部的相移量為180[°]以上且210[°]以下的範圍。 Further, in the photomask according to the present invention, the phase shift amount of the first phase shift portion is in a range of 160 [°] or more and 190 [°] or less, and the phase shift of the second phase shift portion is The amount is in the range of 180[°] or more and 210[°] or less.

通過設為這樣的構成，從而容易調整第1相移部及第2相移部的相移量。 By setting it as such a structure, it becomes easy to adjust the phase shift amount of a 1st phase shift part and a 2nd phase shift part.

另外，本發明涉及的光掩模，其特徵在於，所述第2相移部是構成所述第1相移部的相移膜與半透過膜的層疊。 Further, in the photomask according to the present invention, the second phase shift portion is a lamination of a phase shift film and a semi-permeable film that constitute the first phase shift portion.

通過設為這樣的構成，從而容易製造光掩模。 By setting it as such a structure, it becomes easy to manufacture a photomask.

根據本發明，可以提供能夠穩定地解像微細的孔圖案的光掩模。 According to the present invention, a photomask capable of stably resolving a fine hole pattern can be provided.

1:透過性基板 1: Permeable substrate

2:半透過膜 2: Semi-permeable membrane

3:圖案 3: Pattern

4:開口部 4: Opening

5:相移膜 5: Phase shift film

6:抗蝕劑膜 6: Resist film

7:第1相移區域 7: 1st Phase Shift Region

8:第2相移區域 8: 2nd phase shift area

9:抗蝕劑膜 9: Resist film

10:抗蝕劑膜 10: Resist film

51:相移膜 51: Phase shift film

100:光掩模 100: Photomask

101:透過部 101: Through the Department

102:第1相移部 102: 1st phase shift part

103:第2相移部 103: 2nd phase shift part

圖1(a)是實施方式1的光掩模的俯視圖，圖1(b)、圖1(c)用於說明其光刻特性(DOF及所需曝光量)的改善效果的圖表。 1( a ) is a plan view of the photomask according to Embodiment 1, and FIGS. 1( b ) and 1( c ) are graphs for explaining the effect of improving the lithography characteristics (DOF and required exposure amount).

圖2(a)、圖2(b)是表示實施方式1的光掩模的主要工序的剖視圖，圖2(c)是其俯視圖。 FIGS. 2( a ) and 2 ( b ) are cross-sectional views showing main steps of the photomask according to Embodiment 1, and FIG. 2( c ) is a plan view thereof.

圖3(a)~圖3(c)是表示實施方式1的光掩模的主要工序的剖視圖，圖3(d)是其俯視圖。 FIGS. 3( a ) to 3( c ) are cross-sectional views showing main steps of the photomask according to Embodiment 1, and FIG. 3( d ) is a plan view thereof.

圖4是表示實施方式2的光掩模的主要工序的剖視圖。 4 is a cross-sectional view showing a main process of the photomask according to Embodiment 2. FIG.

圖5(a)是表示實施方式2的光掩模的主要工序的剖視圖，圖5(b)是其俯視圖。 FIG. 5( a ) is a cross-sectional view showing a main process of the photomask according to Embodiment 2, and FIG. 5( b ) is a plan view thereof.

以下，參照附圖對本發明的實施方式進行說明。但是，以下的實施方式均不在本發明的主旨的認定中給出限定性的解釋。另外，有時對相同或同種構件標注相同的參照符號而省略說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are not intended to give a limited interpretation in identifying the gist of the present invention. In addition, the same reference numerals may be attached to the same or similar members, and descriptions may be omitted.

(實施方式1) (Embodiment 1)

圖1(a)是表示本發明涉及的光掩模100的俯視圖，圖1(b)、圖1(c)是就對光致抗蝕劑進行曝光時的DOF及所需曝光量來說明本光掩模100的改善效果的圖表。通過將光掩模100用於光刻工序，從而能夠將微細孔(尤其是1.5[μm]~2.0[μm]的尺寸)穩定地解像到作為曝光對象的光致抗蝕劑上。 FIG. 1( a ) is a plan view showing a photomask 100 according to the present invention, and FIGS. 1( b ) and 1( c ) illustrate the present invention in terms of DOF and required exposure amount when exposing a photoresist A graph of the improvement effect of the photomask 100 . By using the photomask 100 for the photolithography process, it is possible to stably resolve micropores (in particular, a size of 1.5 [μm] to 2.0 [μm]) on a photoresist to be exposed.

光掩模100以包圍用於在抗蝕劑上形成孔圖案的透過部101的方式形成第1相移部102，第2相移部(凸緣(外緣)部)103介於透過部101(開口部)與第1相移部102之間。因此，透過部101與第2相移部103相接，第2相移部103與第1相移部102相接。 In the photomask 100 , the first phase shift portion 102 is formed so as to surround the transmission portion 101 for forming a hole pattern in the resist, and the second phase shift portion (the flange (outer edge) portion) 103 is interposed between the transmission portion 101 (opening portion) and the first phase shift portion 102 . Therefore, the transmissive portion 101 is in contact with the second phase shift portion 103 , and the second phase shift portion 103 is in contact with the first phase shift portion 102 .

第1相移部102及第2相移部103具有能夠將用於製造電子設備的光刻工序中所使用的曝光光反轉的相移量。 The first phase shift unit 102 and the second phase shift unit 103 have a phase shift amount capable of inverting exposure light used in a photolithography process for manufacturing an electronic device.

相當於透過部101(開口部)與第1相移部102的相對距離的、第2相移部的寬度R(參照圖1)為0[μm]<R

Figure 109145883-A0305-02-0006-1
1[μm]，更優選為0.5[μm]
Figure 109145883-A0305-02-0006-2
R
Figure 109145883-A0305-02-0006-3
1[μm]。與第1相移部102相比，第2相移部(凸緣部)103對曝光光的透射率較低。即，以依次包圍孔開口用圖案的透過部101的周圍的方式來形成低透射率的相移部(第2相移部103)及高透射率的相移部(第1相移部102)。 The width R (see FIG. 1 ) of the second phase shift portion corresponding to the relative distance between the transmission portion 101 (opening portion) and the first phase shift portion 102 is 0 [μm]<R
Figure 109145883-A0305-02-0006-1
1 [μm], more preferably 0.5 [μm]
Figure 109145883-A0305-02-0006-2
R
Figure 109145883-A0305-02-0006-3
1 [μm]. The transmittance of the second phase shift portion (flange portion) 103 to exposure light is lower than that of the first phase shift portion 102 . That is, a low transmittance phase shift portion (second phase shift portion 103 ) and a high transmittance phase shift portion (first phase shift portion 102 ) are formed so as to surround the periphery of the transmission portion 101 of the hole opening pattern in order. .

透過部101對光刻工序中的曝光光(i射線)的透射率為90~100%(90%

Figure 109145883-A0305-02-0006-4
透射率
Figure 109145883-A0305-02-0006-5
100%)，取決於光掩模的透過性基板。 The transmittance of the transmissive portion 101 to exposure light (i-rays) in the photolithography process is 90 to 100% (90%
Figure 109145883-A0305-02-0006-4
Transmittance
Figure 109145883-A0305-02-0006-5
100%), depending on the transparent substrate of the photomask.

第1相移部102相對於曝光光(i射線)的相移量(相位差)為大致180[°]，透射率為8~15%(8%

Figure 109145883-A0305-02-0006-6
透射率
Figure 109145883-A0305-02-0006-7
15%)。 The phase shift amount (phase difference) of the first phase shift portion 102 with respect to the exposure light (i-ray) is approximately 180 [°], and the transmittance is 8 to 15% (8%
Figure 109145883-A0305-02-0006-6
Transmittance
Figure 109145883-A0305-02-0006-7
15%).

第2相移部103相對於曝光光(i射線)的相移量為大致180[°]，透射率為3~7%(3%

Figure 109145883-A0305-02-0006-8
透射率
Figure 109145883-A0305-02-0006-9
7%)。 The phase shift amount of the second phase shift portion 103 with respect to the exposure light (i-ray) is approximately 180 [°], and the transmittance is 3 to 7% (3%
Figure 109145883-A0305-02-0006-8
Transmittance
Figure 109145883-A0305-02-0006-9
7%).

如上所述，第1相移部102及第2相移部103均為大致180[°](具體而言為160[°]

Figure 109145883-A0305-02-0006-10
相移量
Figure 109145883-A0305-02-0006-11
210[°])而將曝光光的相位反轉。另外，第2相移部103的透射率比第1相移部102的透射率低。 As described above, the first phase shift unit 102 and the second phase shift unit 103 are both approximately 180[°] (specifically, 160[°]).
Figure 109145883-A0305-02-0006-10
Phase shift amount
Figure 109145883-A0305-02-0006-11
210[°]) to reverse the phase of the exposure light. In addition, the transmittance of the second phase shift portion 103 is lower than the transmittance of the first phase shift portion 102 .

予以說明，如後所述，例如在第1相移部102由單層結構構成、且第2相移部103由層疊結構構成的情況下，第1相移部102及第2相移部103的相移量可以分別設為例如160[°]

Figure 109145883-A0305-02-0007-12
相移量
Figure 109145883-A0305-02-0007-13
190[°]及180[°]
Figure 109145883-A0305-02-0007-14
相移量
Figure 109145883-A0305-02-0007-15
210[°]。通過設定這些相移量的規格，從而容易調整第1相移部102及第2相移部103的相移量，並且也容易製造光掩模。 It should be noted that, as will be described later, for example, when the first phase shift unit 102 is formed of a single-layer structure and the second phase shift unit 103 is formed of a laminated structure, the first phase shift unit 102 and the second phase shift unit 103 The amount of phase shift can be set to e.g. 160[°]
Figure 109145883-A0305-02-0007-12
Phase shift amount
Figure 109145883-A0305-02-0007-13
190[°] and 180[°]
Figure 109145883-A0305-02-0007-14
Phase shift amount
Figure 109145883-A0305-02-0007-15
210[°]. By setting the specifications of these phase shift amounts, the phase shift amounts of the first phase shift unit 102 and the second phase shift unit 103 can be easily adjusted, and the photomask can also be easily manufactured.

製造具有微細圖案的LSI的半導體工藝的DOF要求值最多為1[μm]左右，與此相比，在對平板顯示器等電子設備的光刻工序中，例如在穩定地轉印尺寸2.0[μm]以下的孔的圖案的情況下，要求DOF比半導體工藝的DOF值高10倍以上。 The DOF required for the semiconductor process for manufacturing LSIs with fine patterns is at most about 1 [μm]. In contrast to this, in the photolithography process for electronic devices such as flat panel displays, for example, the transfer size is 2.0 [μm] stably. In the case of the following hole patterns, the DOF is required to be 10 times or more higher than the DOF value of the semiconductor process.

根據本發明，確認到能夠滿足這樣的苛刻條件，進而確認到相比於專利文獻1所公開的最小所需曝光量(EOP)得到進一步的降低效果。 According to the present invention, it has been confirmed that such severe conditions can be satisfied, and further, it has been confirmed that a further reduction effect can be obtained compared to the minimum required exposure (EOP) disclosed in Patent Document 1.

另外，對第2相移部103的寬度R進行了調查，結果確認到特別優選的寬度R為0.5~1.0[μm]。 In addition, as a result of investigating the width R of the second phase shift portion 103, it was confirmed that the particularly preferable width R is 0.5 to 1.0 [μm].

將DOF及EOP的改善效果示於圖1(b)、圖1(c)中。圖1(b)、圖1(c)是表示在光致抗蝕劑膜上與掩模上的S(邊的長度)大致同等尺寸地形成2[μm]尺寸的孔圖案時的DOF和所需曝光量(EOP)的條件依賴性的圖表。圖1(b)、圖1(c)的圖表的縱軸的“DOF”及“EOP” 分別表示相對於由透過部和遮光部形成的以往的二元掩模的DOF及EOP而言的比值。 The improvement effects of DOF and EOP are shown in Fig. 1(b) and Fig. 1(c). FIGS. 1(b) and 1(c) show the DOF and the total number of DOFs when a hole pattern of 2 [µm] size is formed on the photoresist film with approximately the same size as S (side length) on the mask. Graph of conditional dependence of required exposure (EOP). "DOF" and "EOP" on the vertical axis of the graphs of Figs. 1(b) and 1(c) The ratios with respect to DOF and EOP of the conventional binary mask formed by the transmission part and the light shielding part are respectively shown.

在圖1(b)、圖1(c)中，“PS”是指使用了對曝光光(i射線)的透射率為5%的單層(不具有第2相移部103)相移膜的光掩模。“PS+PS-Rim”是指具備高透射率的第1相移部102和低透射率的第2相移部103的光掩模，第1相移部102的透射率為12%，第2相移部103的透射率為5%。 In FIGS. 1( b ) and 1 ( c ), “PS” refers to a single-layer (without the second phase shift portion 103 ) phase shift film having a transmittance of 5% to exposure light (i-rays) used photomask. "PS+PS-Rim" refers to a photomask including a first phase shift portion 102 with high transmittance and a second phase shift portion 103 with low transmittance. The transmittance of the first phase shift portion 102 is 12%, and the 2 The transmittance of the phase shift portion 103 was 5%.

予以說明，相移量均為180[°]。 It should be noted that the phase shift amounts were all 180 [°].

在“PS”的情況下，與以往的二元掩模相比，DOF增大至約1.5倍，確認到改善效果，但是存在EOP增加至1.3倍的問題。 In the case of "PS", the DOF was increased by about 1.5 times compared with the conventional binary mask, and the improvement effect was confirmed, but there was a problem that the EOP was increased by 1.3 times.

在“PS+PS-Rim”的情況下，確認到DOF與以往的二元掩模相比增加至约1.9倍，即便與“PS”相比，也具有進一步的改善效果。另一方面，EOP為約1.1倍，與以往的二元掩模為同等程度。 In the case of "PS+PS-Rim", it was confirmed that the DOF was increased by about 1.9 times compared with the conventional binary mask, and even compared with "PS", there was a further improvement effect. On the other hand, the EOP is about 1.1 times, which is about the same level as the conventional binary mask.

即，通過具備第1相移部102和第2相移部103的光掩模，確認到既抑制(減輕)所需曝光量的增大，又得到DOF的大幅改善效果。 That is, with the photomask including the first phase shift portion 102 and the second phase shift portion 103, it was confirmed that the increase in the required exposure amount was suppressed (reduced) and the effect of significantly improving DOF was obtained.

另外，通過將第2相移部103的透射率設為5%，並且在8~15%的範圍增加第1相移部102的透射率，確認到DOF具有增加的傾向，EOP幾乎沒有變化(反而稍微減少)。因此，具有對透射率而言的餘量(margin)(例 如對光掩模的面內透射率的均勻性而言的餘量)，能夠實現穩定的曝光條件。 In addition, by setting the transmittance of the second phase shift portion 103 to 5%, and increasing the transmittance of the first phase shift portion 102 in the range of 8 to 15%, it was confirmed that the DOF tends to increase, and the EOP hardly changes ( slightly reduced). Therefore, there is a margin for transmittance (eg As a margin for the uniformity of the in-plane transmittance of the photomask), stable exposure conditions can be realized.

予以說明，上述的傾向在第2相移部103的透射率為3~7%的範圍時也同樣。 It should be noted that the above-mentioned tendency is also the same when the transmittance of the second phase shift portion 103 is in the range of 3 to 7%.

另一方面，在僅使用了不具備低透射率的第2相移部103的單層相移膜的相移掩模的情況下，確認到EOP對於相移膜的透射率的依賴性高，容易因相移膜的透射率發生變動而受到影響。 On the other hand, in the case of using only the phase shift mask of the single-layer phase shift film without the second phase shift portion 103 of low transmittance, it was confirmed that the dependence of EOP on the transmittance of the phase shift film is high, It is easily affected by the change in transmittance of the phase shift film.

這樣，光掩模100具有充分高的DOF，對抗蝕劑的膜厚而言可確保充分的光刻工藝的餘量。進而還能抑制孔開口所需的曝光量的增大。因此，可以滿足製造電子設備時對光刻工序的要求而在抗蝕劑膜上穩定地形成孔圖案。 In this way, the photomask 100 has a sufficiently high DOF, and a sufficient margin for the photolithography process can be secured with respect to the film thickness of the resist. Furthermore, it is possible to suppress an increase in the exposure amount required for hole opening. Therefore, the hole pattern can be stably formed in the resist film while satisfying the requirements of the photolithography process in the manufacture of electronic equipment.

予以說明，雖然對曝光光為i射線的情況進行了說明，但是曝光光並不限定於i射線，可以為i射線、h射線及g射線或它們的混合光。相移量、透射率可以對應於曝光光的代表波長來設定。予以說明，在其他實施方式中也同樣。 In addition, although the case where the exposure light is i-ray was demonstrated, the exposure light is not limited to i-ray, and may be i-ray, h-ray, g-ray, or a mixed light thereof. The phase shift amount and transmittance can be set according to the representative wavelength of the exposure light. In addition, it is the same also in other embodiment.

以下，詳細地說明本實施方式的光掩模100的製造工序。 Hereinafter, the manufacturing process of the photomask 100 of this embodiment is demonstrated in detail.

如圖2(a)所示，準備合成石英玻璃等透過性基板1，利用濺射法、蒸鍍法等在透過性基板1上形成(例如膜厚 5[nm]~20[nm])由例如Cr系金屬化合物等形成的半透過膜2(半色調膜)。 As shown in FIG. 2( a ), a transmissive substrate 1 such as synthetic quartz glass is prepared, and formed on the transmissive substrate 1 by sputtering, vapor deposition, etc. 5 [nm] to 20 [nm]) semi-permeable film 2 (halftone film) formed of, for example, a Cr-based metal compound or the like.

此時，半透過膜2對曝光光(i射線)的透射率例如通過調整組成及膜厚而設定成40~70%。 At this time, the transmittance of the semi-permeable film 2 to exposure light (i-rays) is set to 40 to 70%, for example, by adjusting the composition and film thickness.

接著，如圖2(b)所示，在半透過膜2上形成(光刻)抗蝕劑膜，利用曝光及顯影工藝將抗蝕劑膜圖案化。之後，以圖案化的抗蝕劑膜作為掩模，利用濕蝕刻法或乾蝕刻法將半透過膜2進行蝕刻，形成由半透過膜2形成的圖案3。之後，通過灰化法或浸漬於抗蝕劑剝離液來除去抗蝕劑膜。 Next, as shown in FIG. 2( b ), a (photolithography) resist film is formed on the semi-permeable film 2 , and the resist film is patterned by exposure and development processes. Then, using the patterned resist film as a mask, the semi-permeable film 2 is etched by a wet etching method or a dry etching method to form a pattern 3 formed of the semi-permeable film 2 . After that, the resist film is removed by an ashing method or immersion in a resist stripping solution.

圖案3的截面的寬度設定為圖1(a)的第2相移部的寬度R。 The width of the cross section of the pattern 3 is set to the width R of the second phase shift portion in FIG. 1( a ).

予以說明，為了後續的光刻，也可以將半透過膜2圖案化而適當形成對準標記。 It should be noted that, for the subsequent photolithography, the semi-permeable film 2 may be patterned to appropriately form alignment marks.

圖2(c)是圖2(b)所示工序中的光掩模100的俯視圖，其表示圖案3的輪廓(layout)。圖案3以包圍用於形成孔圖案的開口部4的周圍的凸緣部(外邊緣部)的形式來形成。 FIG. 2( c ) is a plan view of the photomask 100 in the process shown in FIG. 2( b ), which shows the layout of the pattern 3 . The pattern 3 is formed in the form of a flange portion (outer edge portion) surrounding the periphery of the opening portion 4 for forming the hole pattern.

例如在將2.0[μm]的孔圖案轉印至光致抗蝕劑膜的情況下，光掩模100的開口部4的優選尺寸S(邊的長度)為2.2~2.4[μm]。 For example, when a hole pattern of 2.0 [μm] is transferred to a photoresist film, the preferable dimension S (side length) of the opening 4 of the photomask 100 is 2.2 to 2.4 [μm].

接著，如圖3(a)所示，利用濺射法、蒸鍍法等形成(例如膜厚50[nm]~100[nm])由例如Cr系金屬化合物等形成的相移膜5(相位反轉膜)。調整組成及膜厚，以使相移膜5對曝光光(i射線)的透射率為8~15%、相移量為160~190[°]。 Next, as shown in FIG. 3( a ), a phase shift film 5 (phase shift film 5 , which is formed of, for example, a Cr-based metal compound or the like) is formed (for example, with a film thickness of 50 [nm] to 100 [nm]) by a sputtering method, a vapor deposition method, or the like. reversal film). The composition and film thickness are adjusted so that the transmittance of the phase shift film 5 to exposure light (i-rays) is 8 to 15% and the phase shift amount is 160 to 190 [°].

例如，圖案3(半透過膜2)和相移膜5可優選使用相同的膜種類(相同組成)，也可以為不同的膜種類。例如可以為Ti系金屬化合物。 For example, the pattern 3 (semi-permeable membrane 2 ) and the phase shift membrane 5 may preferably use the same membrane type (same composition), or may be different membrane types. For example, it may be a Ti-based metal compound.

接著，如圖3(b)所示，形成抗蝕劑膜6，利用曝光及顯影工藝將抗蝕劑膜6圖案化。在該工序中，除去相當於開口部4的部位的抗蝕劑膜6。即，圖案化的抗蝕劑膜6在被圖案3包圍的區域中露出相移膜5。 Next, as shown in FIG. 3( b ), a resist film 6 is formed, and the resist film 6 is patterned by exposure and development processes. In this step, the resist film 6 at the portion corresponding to the opening portion 4 is removed. That is, the patterned resist film 6 exposes the phase shift film 5 in the region surrounded by the pattern 3 .

接著，如圖3(c)所示，以圖案化的抗蝕劑膜6作為掩模，利用濕蝕刻法或乾蝕刻法將相移膜5進行蝕刻而圖案化。之後，通過灰化法或浸漬於抗蝕劑剝離液來除去抗蝕劑膜6。 Next, as shown in FIG. 3( c ), using the patterned resist film 6 as a mask, the phase shift film 5 is etched and patterned by a wet etching method or a dry etching method. After that, the resist film 6 is removed by an ashing method or immersion in a resist stripping solution.

如圖3(c)所示，形成由相移膜5形成的第1相移區域7以及由構成圖案3的半透過膜2與相移膜5的層疊形成的第2相移區域8。另外，在開口部4中，露出透過性基板1。 As shown in FIG.3(c), the 1st phase shift area|region 7 formed by the phase shift film 5, and the 2nd phase shift area|region 8 formed by the lamination|stacking of the semi-permeable film 2 and the phase shift film 5 which comprise the pattern 3 are formed. In addition, in the opening portion 4, the transparent substrate 1 is exposed.

圖3(d)是圖3(c)所示工序中的光掩模的俯視圖。以包圍開口部4的方式形成第2相移區域8，進而，以包圍第2相移區域8的方式形成第1相移區域7。因此，第 2相移區域8的內周與開口部4的外周相接，第1相移區域7的內周與第2相移區域8的外周相接。 Fig. 3(d) is a plan view of the photomask in the step shown in Fig. 3(c). The second phase shift region 8 is formed so as to surround the opening portion 4 , and the first phase shift region 7 is further formed so as to surround the second phase shift region 8 . Therefore, the first The inner circumference of the second phase shift region 8 is in contact with the outer circumference of the opening portion 4 , and the inner circumference of the first phase shift region 7 is in contact with the outer circumference of the second phase shift region 8 .

第1相移區域7相當於圖1的第1相移部102，第2相移區域8相當於第2相移部103，開口部4相當於透過部101。 The first phase shift region 7 corresponds to the first phase shift portion 102 in FIG. 1 , the second phase shift region 8 corresponds to the second phase shift portion 103 , and the opening portion 4 corresponds to the transmission portion 101 .

第1相移區域7由相移膜5形成，對曝光光的透射率為8~15%，相移量為160~190[°]。 The first phase shift region 7 is formed of the phase shift film 5 , has a transmittance of 8 to 15% with respect to exposure light, and a phase shift amount of 160 to 190 [°].

第2相移區域8由半透過膜2與相移膜5層疊而形成，對曝光光的透射率為3~7%，相移量為180~210[°]。只要能夠設定成半透過膜2與相移膜5的層疊的相移量為180~210[°]即可，半透過膜2本身的相移量並無特別限定。例如半透過膜2本身的相移量可以設定得較小(大致0[°]，例如0~20[°])。即使在半透過膜2與相移膜5為相同的膜種類的情況下，也可以將半透過膜2處的相移量設定得較小(減薄膜厚)、將層疊結構的第2相移區域8中的相移量設為大致180[°]、將透射率調整得較低。 The second phase shift region 8 is formed by laminating the semi-permeable film 2 and the phase shift film 5 , the transmittance to exposure light is 3 to 7%, and the phase shift amount is 180 to 210 [°]. The amount of phase shift of the semipermeable membrane 2 itself is not particularly limited as long as the amount of phase shift of the lamination of the semipermeable membrane 2 and the phase shift membrane 5 can be set to 180 to 210 [°]. For example, the phase shift amount of the semi-permeable membrane 2 itself can be set to be small (approximately 0 [°], for example, 0 to 20 [°]). Even when the semi-permeable membrane 2 and the phase-shift membrane 5 are of the same membrane type, the amount of phase shift at the semi-permeable membrane 2 can be set to be small (film thickness reduction), and the second phase shift of the laminated structure can be reduced. The amount of phase shift in the region 8 was set to approximately 180 [°], and the transmittance was adjusted to be low.

以下，示出代表性的成膜條件例。予以說明，下層膜是指在層疊結構的第2相移區域8中形成於下層側(透過性基板1側)的膜(此時為半透過膜2)，上層膜是指形成於上層側(下層膜上)的膜(此時為相移膜5)。 Hereinafter, typical examples of film-forming conditions are shown. In addition, the lower layer film refers to a film (the semi-permeable film 2 in this case) formed on the lower layer side (the permeable substrate 1 side) in the second phase shift region 8 of the laminated structure, and the upper layer film refers to a film formed on the upper layer side ( film on the lower layer film) (phase shift film 5 in this case).

<條件1> <Condition 1>

：材質：膜種類：膜厚：透射率：相位差 : Material: Film type: Film thickness: Transmittance: retardation

下層膜：Cr系化合物：半色調膜：7nm：60%：- Underlayer film: Cr-based compound: Halftone film: 7nm: 60%: -

上層膜：Cr系化合物：相移膜：75nm：10%：185° Upper layer film: Cr-based compound: Phase shift film: 75nm: 10%: 185°

層疊：：層疊結構：：5%：194° Lamination::Laminated Structure::5%:194°

<條件2> <Condition 2>

：材質：膜種類：膜厚：透射率：相位差 : Material: Film type: Film thickness: Transmittance: retardation

下層膜：Cr系化合物：半色調膜：15nm：47%：- Underlayer film: Cr-based compound: Halftone film: 15nm: 47%: -

上層膜：Cr系化合物：相移膜：67nm：12%：174° Upper layer film: Cr-based compound: Phase shift film: 67 nm: 12%: 174°

層疊：：層疊結構：：5%：185° Laminated::Laminated Structure::5%:185°

<條件3> <Condition 3>

：材質：膜種類：膜厚：透射率：相位差 : Material: Film type: Film thickness: Transmittance: retardation

下層膜：Cr系化合物：半色調膜：17nm：44%：- Underlayer film: Cr-based compound: Halftone film: 17nm: 44%: -

上層膜：Cr系化合物：相移膜：62nm：12%：180° Upper layer film: Cr-based compound: Phase shift film: 62 nm: 12%: 180°

層疊：：層疊結構：：5%：200° Lamination::Laminated Structure::5%:200°

在上述例中，透射率低的第2相移區域8由半透過膜2與相移膜5的層疊形成，通過相移膜5來確定相移量的值的大部分。 In the above example, the second phase shift region 8 with low transmittance is formed by laminating the semi-permeable film 2 and the phase shift film 5 , and most of the value of the phase shift amount is determined by the phase shift film 5 .

相移膜5可以優選使用相移量的波長依賴性低的、例如相移的變動為20[°]以內的非波長依賴型半色調膜(所謂“FLAT膜”)。但是，由於只要滿足上述條件即可，因此並不限定於非波長依賴型半色調膜。另外，關於半透過膜2，例如也可以採用相移量小的條件(膜厚等)，無需特別採用非波長依賴型半色調膜，可以採用通常的半透過膜(波 長依賴型半色調膜)或非波長依賴型半色調膜中的任一種膜。 As the phase shift film 5, a wavelength-independent halftone film (so-called "FLAT film") having a low wavelength dependence of the phase shift amount, for example, a phase shift variation within 20 [°] can be preferably used. However, as long as the above-mentioned conditions are satisfied, it is not limited to the wavelength-independent halftone film. In addition, for the semi-permeable film 2, for example, a condition (film thickness, etc.) with a small amount of phase shift may be used, and there is no need to use a wavelength-independent halftone film in particular, and a normal semi-permeable film (wavelength film) may be used. Either a long-dependent halftone film) or a wavelength-independent halftone film.

予以說明，半透過膜2及相移膜5的圖案化方法並不限定於上述圖2、圖3所示的方法。例如在圖2(b)的工序中，將相當於第1相移部102的區域的半透過膜2蝕刻(即保留相當於透過部101和第2相移部103的區域的半透過膜2)，之後形成相移膜5，在圖3(b)的工序中，可以將相當於開口部4(透過部101)的區域的半透過膜2及相移膜5的層疊蝕刻。 In addition, the patterning method of the semi-permeable film 2 and the phase shift film 5 is not limited to the method shown in the said FIG. 2, FIG. 3. FIG. For example, in the process of FIG. 2( b ), the semi-permeable film 2 in the region corresponding to the first phase shift portion 102 is etched (that is, the semi-permeable film 2 in the region corresponding to the transmission portion 101 and the second phase shift portion 103 remains) ), then the phase shift film 5 is formed, and in the process of FIG. 3(b), the stack of the semi-permeable film 2 and the phase shift film 5 in the region corresponding to the opening 4 (transmissive portion 101) can be etched.

予以說明，半透過膜2及相移膜5的材質並不限定於Cr金屬化合物。也可以使用已知的其他金屬系化合物。 In addition, the material of the semi-permeable film 2 and the phase shift film 5 is not limited to a Cr metal compound. Other known metal-based compounds can also be used.

(實施方式2) (Embodiment 2)

在上述實施方式1中，對在透過性基板1上形成半透過膜2並在圖案化後形成相移膜5來製造光掩模100的方法進行了說明。 In the above-mentioned Embodiment 1, the method of manufacturing the photomask 100 by forming the semi-transmissive film 2 on the transmissive substrate 1 and then forming the phase shift film 5 after patterning has been described.

但是，也可以在透過性基板1上形成相移膜5後再形成半透過膜2。即，在第2相移部103中，半透過膜2與相移膜5的上下關係可以構成為與實施方式1相反。 However, the semi-permeable film 2 may be formed after the phase shift film 5 is formed on the transparent substrate 1 . That is, in the second phase shift portion 103 , the vertical relationship between the semi-permeable film 2 and the phase shift film 5 may be reversed from that of the first embodiment.

以下，對實施方式2的光掩模100的製造工序進行說明。 Hereinafter, the manufacturing process of the photomask 100 of Embodiment 2 is demonstrated.

如圖4(a)所示，利用濺射法、蒸鍍法等在透過性基板1上形成相移膜5(相位反轉膜)。相移膜5的透射率及相移量如上述所示。 As shown in FIG. 4( a ), a phase shift film 5 (phase inversion film) is formed on the transparent substrate 1 by sputtering, vapor deposition, or the like. The transmittance and phase shift amount of the phase shift film 5 are as described above.

接著，如圖4(b)所示，利用濺射法、蒸鍍法等形成半透過膜2。半透過膜2的透射率如上述所示。之後，形成抗蝕劑膜9(第1抗蝕劑膜)，利用曝光及顯影工藝將抗蝕劑膜9圖案化。在該工序中，除去相當於開口部4的部位的抗蝕劑膜9。 Next, as shown in FIG. 4( b ), the semi-permeable film 2 is formed by sputtering, vapor deposition, or the like. The transmittance of the semi-permeable film 2 is as described above. After that, a resist film 9 (first resist film) is formed, and the resist film 9 is patterned by exposure and development processes. In this step, the resist film 9 at the portion corresponding to the opening portion 4 is removed.

接著，如圖4(c)所示，以抗蝕劑膜9作為掩模，利用例如濕蝕刻法或乾蝕刻法將半透過膜2及相移膜5進行蝕刻。在半透過膜2及相移膜5形成開口部4，露出透過性基板1。之後，通過灰化法或浸漬於抗蝕劑剝離液來除去抗蝕劑膜9。 Next, as shown in FIG. 4( c ), using the resist film 9 as a mask, the semi-permeable film 2 and the phase shift film 5 are etched by, for example, wet etching or dry etching. Openings 4 are formed in the semi-permeable film 2 and the phase shift film 5 to expose the permeable substrate 1 . After that, the resist film 9 is removed by an ashing method or immersion in a resist stripping solution.

予以說明，為了後續的光刻，也可以將半透過膜2及相移膜5的層疊進行圖案化而適當形成對準標記。 It should be noted that, for the subsequent photolithography, the stack of the semi-permeable film 2 and the phase shift film 5 may be patterned to appropriately form alignment marks.

接著，如圖4(d)所示，形成抗蝕劑膜10(第2抗蝕劑膜)，利用曝光及顯影工藝將抗蝕劑膜10圖案化。抗蝕劑膜10的圖案以包圍開口部4、且與半透過膜2及相移膜5的層疊膜重疊的方式來構成。重疊寬度設定為R。保留由開口部4和包圍該開口部4的第2相移區域8構成的圖案區域的抗蝕劑膜10。 Next, as shown in FIG. 4( d ), a resist film 10 (second resist film) is formed, and the resist film 10 is patterned by exposure and development processes. The pattern of the resist film 10 is formed so as to surround the opening 4 and to overlap with the laminated film of the semi-permeable film 2 and the phase shift film 5 . The overlap width is set to R. The resist film 10 of the pattern region including the opening 4 and the second phase shift region 8 surrounding the opening 4 remains.

予以說明，重疊寬度可以考慮在後續的半透過膜2的蝕刻工序中的側蝕刻量而設定成R加上側蝕刻量所得的值。 It should be noted that the overlap width can be set to a value obtained by adding the amount of side etching to R in consideration of the amount of side etching in the subsequent etching process of the semi-permeable film 2 .

接著，如圖5(a)所示，以抗蝕劑膜10作為掩模，利用例如濕蝕刻法或乾蝕刻法將相移膜5上的半透過膜2進行蝕刻。之後，通過灰化法或浸漬於抗蝕劑剝離液來除去抗蝕劑膜10。 Next, as shown in FIG. 5( a ), using the resist film 10 as a mask, the semi-permeable film 2 on the phase shift film 5 is etched by, for example, wet etching or dry etching. After that, the resist film 10 is removed by an ashing method or immersion in a resist stripping solution.

予以說明，為了保留相移膜5而對相移膜5上的半透過膜2進行蝕刻，相移膜5和半透過膜2可優選由不同的材料構成。例如可以使用相移膜5和半透過膜2中的一者由Cr系金屬化合物構成、另一者由Ti系金屬化合物構成的組合。其結果可以選擇性地蝕刻相移膜5上的半透過膜2。 In addition, in order to etch the semi-permeable film 2 on the phase-shift film 5 in order to leave the phase-shift film 5, the phase-shift film 5 and the semi-permeable film 2 may preferably be formed of different materials. For example, a combination in which one of the phase shift film 5 and the semi-permeable film 2 is made of a Cr-based metal compound and the other is made of a Ti-based metal compound can be used. As a result, the semi-permeable film 2 on the phase shift film 5 can be selectively etched.

另外，也可以通過使相移膜5和半透過膜2由相同材料構成，並且將蝕刻時間設定成與半透過膜2的蝕刻時間相同，從而除去相移膜5上的半透過膜2。 Alternatively, the semi-permeable film 2 on the phase shift film 5 may be removed by making the phase shift film 5 and the semi-permeable film 2 made of the same material and setting the etching time to be the same as the etching time of the semi-permeable film 2 .

圖5(b)是圖5(a)中的光掩模的俯視圖。 Fig. 5(b) is a top view of the photomask in Fig. 5(a).

以包圍開口部4的方式形成寬度R的第2相移區域8，進而，以包圍第2相移區域8的方式形成第1相移區域7。 The second phase shift region 8 having the width R is formed so as to surround the opening portion 4 , and the first phase shift region 7 is further formed so as to surround the second phase shift region 8 .

與圖3(d)所示的第2相移區域8在半透過膜2上形成相移膜5不同，圖5(b)所示的第2相移區域8在相移膜5上形成半透過膜2。 Unlike the second phase shift region 8 shown in FIG. 3( d ) where the phase shift film 5 is formed on the semi-permeable film 2 , the second phase shift region 8 shown in FIG. through membrane 2.

在本實施方式2中，能夠得到DOF和曝光量的改善效果是不言而喻的。 In the second embodiment, it is self-evident that the effects of improving the DOF and the exposure amount can be obtained.

與實施方式1的光掩模的製造方法相比，實施方式2的光掩模的製造方法是在平坦的相移膜5上形成半透過膜2，因此容易進行半透過膜2的成膜。另一方面，與實施方式1的光掩模的製造方法相比，實施方式2的光掩模的製造方法需要將形成於第2相移區域8的上層的膜在形成於下層的膜上進行蝕刻，因此需要準確地進行蝕刻的控制。 Compared with the method of manufacturing the photomask of the first embodiment, the method of manufacturing the photomask of the second embodiment forms the semi-transmissive film 2 on the flat phase shift film 5 , so that the semi-transmissive film 2 can be easily formed. On the other hand, compared with the method of manufacturing a photomask of Embodiment 1, the method of manufacturing a photomask of Embodiment 2 requires that the film formed on the upper layer of the second phase shift region 8 be formed on the film formed on the lower layer. Etching requires accurate etching control.

予以說明，在上述實施方式2中，在相移膜5上形成了半透過膜2，但是在相移膜5和半透過膜2由相同材質構成的情況下，也可以不採用層疊結構而形成與相移膜5的膜厚和半透過膜2的膜厚之和相等的相移膜51。在圖4(b)的工序中，將相移膜5與半透過膜2的層疊置換為單層的相移膜51，然後使用抗蝕劑膜9進行蝕刻，可以利用圖4(c)~圖5(a)的工序來形成第1相移區域7及第2相移區域8。 In the above-described second embodiment, the semi-permeable film 2 is formed on the phase shift film 5. However, when the phase shift film 5 and the semi-permeable film 2 are made of the same material, they may be formed without a laminated structure. The phase shift film 51 is equal to the sum of the film thickness of the phase shift film 5 and the film thickness of the semi-permeable film 2 . In the process of FIG. 4( b ), the lamination of the phase shift film 5 and the semi-permeable film 2 is replaced with a single-layer phase shift film 51 , and then etching is performed using the resist film 9 . The process of FIG.5(a) forms the 1st phase shift area|region 7 and the 2nd phase shift area|region 8.

在該情況下，在圖5(a)的工序中調整相移膜51的蝕刻量(蝕刻時間)，第2相移區域8可以構成為比第1相移區域7厚出所期望的厚度。其結果能夠將第2相移區域8的透射率設定得比第1相移區域7低。 In this case, the etching amount (etching time) of the phase shift film 51 is adjusted in the step of FIG. As a result, the transmittance of the second phase shift region 8 can be set lower than that of the first phase shift region 7 .

[產業上的可利用性] [Industrial Availability]

根據本發明，可以提供能夠穩定地解像微細的孔圖案的光掩模，可優選利用於例如平板顯示器等顯示裝置用電子設備的製造工序中，產業上的可利用性大。 According to the present invention, a photomask capable of stably resolving a fine hole pattern can be provided, which can be preferably used in the manufacturing process of electronic equipment for display devices such as flat panel displays, and has high industrial applicability.

可特別優選利用於像顯示裝置用電子設備的製造那樣對DOF的要求值嚴格的光刻工序中。 In particular, it can be preferably used in a photolithography process that requires a strict DOF value, such as the manufacture of electronic equipment for display devices.

100:光掩模 100: Photomask

101:透過部 101: Through the Department

102:第1相移部 102: 1st phase shift part

103:第2相移部 103: 2nd phase shift part

Claims (5)

一種光掩模，其特徵在於，具備透過部、第1相移部和第2相移部，所述第1相移部及所述第2相移部包圍所述透過部，所述第2相移部介於所述第1相移部與所述透過部之間，所述第2相移部及所述第1相移部將曝光光的相位反轉，所述第2相移部的透射率比所述第1相移部的透射率低。 A photomask comprising a transmissive portion, a first phase shift portion, and a second phase shift portion, the first phase shift portion and the second phase shift portion surrounding the transmissive portion, and the second phase shift portion A phase shift portion is interposed between the first phase shift portion and the transmission portion, the second phase shift portion and the first phase shift portion invert the phase of exposure light, and the second phase shift portion The transmittance is lower than the transmittance of the first phase shift portion. 如請求項1所述的光掩模，其中，所述第1相移部的透射率為8~15%，所述第2相移部的透射率為3~7%。 The photomask according to claim 1, wherein the transmittance of the first phase shift portion is 8 to 15%, and the transmittance of the second phase shift portion is 3 to 7%. 如請求項1所述的光掩模，其中，所述第1相移部及所述第2相移部的相移量為160[°]以上且210[°]以下的範圍。 The photomask according to claim 1, wherein the phase shift amount of the first phase shift portion and the second phase shift portion is in a range of 160 [°] or more and 210 [°] or less. 如請求項3所述的光掩模，其中，所述第1相移部的相移量為160[°]以上且190[°]以下的範圍，所述第2相移部的相移量為180[°]以上且210[°]以下的範圍。 The photomask according to claim 3, wherein the phase shift amount of the first phase shift portion is in a range of 160 [°] or more and 190 [°] or less, and the phase shift amount of the second phase shift portion It is the range of 180 [°] or more and 210 [°] or less. 如請求項1~4中任一項所述的光掩模，其中，所述第2相移部是構成所述第1相移部的相移膜與半透過膜的層疊。 The photomask according to any one of claims 1 to 4, wherein the second phase shift portion is a lamination of a phase shift film and a semi-permeable film constituting the first phase shift portion.
TW109145883A 2020-01-07 2020-12-24 Photomask TWI770736B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-000749 2020-01-07
JP2020000749A JP7383490B2 (en) 2020-01-07 2020-01-07 photo mask

Publications (2)

Publication Number Publication Date
TW202138907A TW202138907A (en) 2021-10-16
TWI770736B true TWI770736B (en) 2022-07-11

Family

ID=76878234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109145883A TWI770736B (en) 2020-01-07 2020-12-24 Photomask

Country Status (4)

Country Link
JP (1) JP7383490B2 (en)
KR (1) KR102555946B1 (en)
CN (1) CN113156758A (en)
TW (1) TWI770736B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018153872A1 (en) * 2017-02-25 2018-08-30 Asml Netherlands B.V. Patterning device, a method of making the same, and a patterning device design method
CN108594594A (en) * 2017-03-10 2018-09-28 Hoya株式会社 The manufacturing method of display device manufacture photomask and display device
TW201837553A (en) * 2017-03-24 2018-10-16 日商Ｈｏｙａ股份有限公司 Photomask for use in manufacturing a display device and method of manufacturing a display device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0798493A (en) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd Phase shift mask and its production
JP3449857B2 (en) * 1996-06-03 2003-09-22 株式会社リコー Halftone phase shift mask and method of manufacturing the same
JP2924804B2 (en) * 1996-08-01 1999-07-26 日本電気株式会社 Photomask, method of manufacturing the same, and photomask blanks
JPH1124231A (en) * 1997-07-01 1999-01-29 Sony Corp Halftone phase shift mask and its manufacture
JPH1152539A (en) * 1997-07-31 1999-02-26 Toshiba Corp Photomask
US6255023B1 (en) * 1999-11-04 2001-07-03 United Microelectronics Corp. Method of manufacturing binary phase shift mask
JP3738267B2 (en) * 1999-11-08 2006-01-25 松下電器産業株式会社 Pattern layout creation method and mask drawing data creation method
JP2003121977A (en) * 2001-10-12 2003-04-23 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device and mask
JP3984625B2 (en) * 2001-12-26 2007-10-03 松下電器産業株式会社 How to create mask data
WO2003062923A1 (en) * 2001-12-26 2003-07-31 Matsushita Electric Industrial Co., Ltd. Photomask, method of producing it and pattern froming method using the photomask
JP3727318B2 (en) * 2002-04-30 2005-12-14 松下電器産業株式会社 Photomask and method for producing the same
JP3727331B2 (en) 2002-04-30 2005-12-14 松下電器産業株式会社 Pattern formation method
TWI269935B (en) * 2005-12-30 2007-01-01 Quanta Display Inc Mask and fabrication method thereof and application thereof
JP6139826B2 (en) * 2012-05-02 2017-05-31 Hoya株式会社 Photomask, pattern transfer method, and flat panel display manufacturing method
JP6093117B2 (en) * 2012-06-01 2017-03-08 Hoya株式会社 Photomask, photomask manufacturing method, and pattern transfer method
KR101414556B1 (en) * 2013-12-13 2014-07-01 주식회사 피케이엘 Photo mask for improving a resolution and a throughput on flat panel display and method for manufacturing the same
JP6581759B2 (en) * 2014-07-17 2019-09-25 Hoya株式会社 Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method
JP6335735B2 (en) * 2014-09-29 2018-05-30 Hoya株式会社 Photomask and display device manufacturing method
JP6259509B1 (en) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス Halftone mask, photomask blank, and method of manufacturing halftone mask
JP6368000B1 (en) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス Photomask, photomask blank, and photomask manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018153872A1 (en) * 2017-02-25 2018-08-30 Asml Netherlands B.V. Patterning device, a method of making the same, and a patterning device design method
CN108594594A (en) * 2017-03-10 2018-09-28 Hoya株式会社 The manufacturing method of display device manufacture photomask and display device
TW201837553A (en) * 2017-03-24 2018-10-16 日商Ｈｏｙａ股份有限公司 Photomask for use in manufacturing a display device and method of manufacturing a display device

Also Published As

Publication number Publication date
KR102555946B1 (en) 2023-07-17
KR20210089086A (en) 2021-07-15
CN113156758A (en) 2021-07-23
JP2021110770A (en) 2021-08-02
TW202138907A (en) 2021-10-16
JP7383490B2 (en) 2023-11-20

Similar Documents

Publication Publication Date Title
JP5555789B2 (en) Photomask, manufacturing method thereof, and pattern transfer method
TWI658320B (en) Method of transferring a pattern and method of manufacturing a display device
KR102195658B1 (en) Photomask, the method of manufacturing photomask, photomask blank and the method of manufacturing display device
JP7384695B2 (en) Photomask, photomask manufacturing method, and display device manufacturing method
JP6259509B1 (en) Halftone mask, photomask blank, and method of manufacturing halftone mask
JP5372403B2 (en) Multi-tone photomask and pattern transfer method
CN107817648B (en) Method for manufacturing photomask, photomask and method for manufacturing display device
JP2011095744A (en) Halftone phase shift photomask blank, halftone phase shift photomask, and fabricating method thereof
JP6271803B1 (en) Photomask, photomask blank, and photomask manufacturing method
TWI770736B (en) Photomask
TWI777402B (en) Photomask for use in manufacturing a display device and method of manufacturing a display device
TWI691783B (en) Photomask for use in manufacturing a display device and method of manufacturing a display device
KR102387740B1 (en) Method for manufacturing photomask, photomask, and method for manufacturing display device
JP7507100B2 (en) Photomask, photomask manufacturing method, and display device manufacturing method
JP3173314B2 (en) Method for manufacturing phase shift mask
JP7489821B2 (en) Photomask manufacturing method
JP6840807B2 (en) Photomask design method and manufacturing method, and display device manufacturing method
JP2005181722A (en) Halftone phase shift mask
KR20060109680A (en) Mask having assist pattern and method of manufacturing the same