CN204790305U - Photomask for proximity printing - Google Patents
Photomask for proximity printing Download PDFInfo
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- CN204790305U CN204790305U CN201520328358.7U CN201520328358U CN204790305U CN 204790305 U CN204790305 U CN 204790305U CN 201520328358 U CN201520328358 U CN 201520328358U CN 204790305 U CN204790305 U CN 204790305U
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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Abstract
The utility model provides a be applicable to the photomask for proximity printing who forms large -scale panel display panel. Shown like 1 (A), photomask for proximity printing possesses: detach on the transparency carrier of surface formation photomask shading portion partly and expose in the pattern (10a) of the printing opacity portion of transparency carrier, and the both sides edge of the pattern of printing opacity portion forms half banding, as to make the looks bit shift pattern (12a) that sees through the membrane to there is not direct contact's part including (carrying out the shading to the light that exposes through the photomask) shading portion and (detach photomask see through the membrane with half and expose in the transparency carrier) printing opacity portion in that the patterning is regional.
Description
Technical field
The utility model relates to a kind of in the manufacturing process of the larger panel such as panel display board, will be formed the proximity printing photomask of line image by proximity printing owner.
Background technology
When making patterns of openings expose by proximity printing machine, if A/F is close to resolution limit, be then difficult to form live width.At present, by shortening close to gap (hereinafter referred to as " gap "), namely by the distance shortening mask and be exposed between object, these problems are processed.
For proximity printing, patent documentation 1 discloses a kind of when manufacturing the colored filter for liquid crystal indicator, is preferred for the proximity printing grayscale mask (patent documentation 1) in halftone exposure.
Prior art document
Patent documentation 1: Japanese Unexamined Patent Publication 2008-122698 publication
Utility model content
Technical matters
Generally speaking, if shorten A/F, then can be reduced by the exposure of peristome, the contrast therefore near opening edge portion reduces, thus is difficult to differentiate.For this reason, be the minimizing being suppressed exposure by shortening mask and the gap be exposed between object at present.But when carrying out proximity printing for large-scale masks such as panel display boards, mask is not necessarily smooth, therefore once close to gap turn narrow, be then mixed into gap or be exposed the problem that object contacts with Mask portion also can be obvious further for foreign matter.
From above-mentioned item, when being obtained the pattern etc. of the black matrix" used in the colored filter of large flat display panel by current proximity printing method, in the experiment of the applicant of the application, to obtain A/F be the line image of 6 μm of degree has been the limit.
In view of above problem, the utility model provides a kind of and forms suitable proximity printing photomask at large flat display panel.
Technical scheme
The proximity printing photomask that the utility model relates to possesses: the transparency carrier forming photomask on surface removes a part for described light shielding part and is exposed to the pattern of the transmittance section of described transparency carrier; The pattern of semi-permeable film that is banded, that make phase-shifts is formed in the both sides of the edge of the pattern of described transmittance section.Further, the part comprising light shielding part in pattern forming region and directly do not contact with transmittance section, wherein, light shielding part carries out shading by photomask to exposure light, and transmittance section is for eliminating photomask and semi-permeable film thus being exposed to transparency carrier.
In this instructions, so-called " making the semi-permeable film of phase-shifts " refers to, makes the semi-permeable film of the phase reversal of incident light (that is, phase differential is 180 degree) relative to common phase shift film, the phase differential of the semi-permeable film of low phase place is less than it, such as, be the semi-permeable film of less than 90 degree.
It should be noted that at this, the manufacture method of the proximity printing photomask that the utility model relates to is, directly can be suitable for the formation method of current masstone photomask, the film formation etc. of the photomask therefore only obtained from sectional view, looks substantially identical with the known many gray-level light mask employing semi-permeable film.But because this photomask is, premised on proximity printing, be therefore the pattern of the negativity of light shielding part beyond pattern, so the etchant resist employing used during exposure is negativity etchant resist, only considering from rectangular line image, is inherently different.
Further, technical problem to be solved in the utility model is the contrast by improving the line image formed close to exposure, instead of for realizing many gray scales, this point should be noticed.For masstone (gray scale) photomask, because semi-permeable portion itself forms a part for exposing patterns, therefore there is the pattern that light shielding part and transmittance section adjoin in the broader context, but the pattern of semi-permeable film of the present utility model is only configured in the edge part of light shielding part and transmittance section to improve contrast, this point, when wishing to get fine pattern, forms low phase place semi-permeable film this point in light shielding part and the boundary portion of transmittance section different from masstone photomask in principle.But the configuration of this pattern is also limited to this, and each pattern can be coordinated to change.According to the contrast of which part improving the pattern be replicated, carrying out specified configuration, therefore for there is no need the pattern of size improving contrast, the adjacent part of light shielding part and transmittance section can be had.
Proximity printing photomask according to first scheme of the present utility model possesses: the pattern of transmittance section, the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier, the pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section.Wherein, described semi-permeable film is, phase differential is 10 ~ 90 degree, and transmitance is the semi-permeable film of low phase place of 30 ~ 70% scopes.Further, comprise in pattern forming region the part that light shielding part directly do not contact with transmittance section, and light shielding part carries out shading according to photomask to exposure light, transmittance section for eliminate photomask and semi-permeable film and be exposed to transparency carrier.
Proximity printing photomask according to alternative plan of the present utility model possesses: the pattern of transmittance section, and the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier; The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section.Wherein, described semi-permeable film is, phase differential is 20 ~ 80 degree, and transmitance is the semi-permeable film of low phase place of 40 ~ 60% scopes.Further, comprise in pattern forming region: light shielding part shading being carried out to exposure light by photomask with eliminate photomask with semi-permeable film and the part that directly do not contact of the transmittance section being exposed to transparency carrier.
Proximity printing photomask according to third program of the present utility model possesses: the pattern of transmittance section, and the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier; The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section.Wherein, described semi-permeable film is, phase differential is 50 ~ 72 degree, and transmitance is the semi-permeable film of low phase place of 40 ~ 60% scopes.Further, comprise in pattern forming region: light shielding part shading being carried out to exposure light by photomask with eliminate photomask and semi-permeable film and the part that directly do not contact of the transmittance section being exposed to transparency carrier.
Proximity printing photomask according to fourth program of the present utility model possesses: the pattern of transmittance section, and the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier; The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section.Wherein, described semi-permeable film is, width is 0.3 ~ 3.0 μm, phase differential is 10 ~ 90%, and transmitance is the semi-permeable film of low phase place of 30 ~ 70% scopes.And, comprise in pattern forming region: light shielding part shading being carried out to exposure light by photomask with eliminate photomask with semi-permeable film and the part that directly do not contact of the transmittance section being exposed to transparency carrier.
Preferably, the material of the semi-permeable film of described low phase place comprises any one in chromium oxide film, chromium nitride film.
Preferably, described proximity printing photomask uses the light being mixed with g line, h line, i line when exposing.
Preferably, the width of described pattern is less than 6 μm.
Preferably, the width of the semi-permeable film adjoined with described light shielding part is 0.3 ~ 3.0 μm.
Preferably, the width of the semi-permeable film adjoined with described light shielding part is 0.5 ~ 1.5 μm.
Beneficial effect
The proximity printing photomask that the utility model relates to is, arranges the semi-permeable film controlling phasing degree and transmitance, thus can increase the exposure of adjacent edges, improve the contrast of transmitting image in the boundary portion (both sides or around) of pattern.
Accompanying drawing explanation
Fig. 1 (A) represents the pattern of the proximity printing photomask that the first embodiment relates to.
Fig. 1 (B) represents the pattern of existing proximity printing photomask.
Fig. 2 (A) ~ Fig. 2 (E) represents the series of process sectional view of the manufacturing process of the photomask shown in Fig. 1 (A).
Fig. 3 represents the intensity distributions of exposure light when being exposed by proximity printing machine for the photomask 1 shown in Fig. 1 (A).
Fig. 4 (A) ~ Fig. 4 (E) represents the series of process sectional view of the manufacturing process of the photomask of the second embodiment.
Fig. 5 represents other example of the pattern of proximity printing photomask of the present embodiment.Fig. 5 (A) represents the pattern near the pixel boundary portion of black matrix", and Fig. 5 (B) represents that poroid pattern is applicable to figure of the present utility model.
Fig. 6 (A) represents the effect of the proximity printing photomask verifying above-mentioned present embodiment and the proximity printing photomask 50 made.Fig. 6 (B) is the picture taken near the boundary portion to exposure region and non-exposed area.
Fig. 7 (A) ~ (F) is the picture to taking at the various patterns being formed at area of the pattern formation.
Primary symbols illustrates:
Proximity printing photomask in 1 embodiment
10 transparency carriers
The pattern of 10a transmittance section
The pattern of 11a photomask
12 semi-permeable films
The pattern of the semi-permeable film of 12a
20a is relative to the corrosion-resisting pattern of the second layer (semi-permeable film)
100 existing proximity printing photomasks
The pattern of 110a transmittance section
The pattern of 111a light shielding part
Embodiment
Below, with reference to the accompanying drawings embodiment of the present utility model is described.It should be noted that at this, these are not to limited explanation of the present utility model.In addition, the symbol being attached with minuscule a, b in reference symbol refers to, by pattern that arbitrary method is formed from the state of film forming.
(the first embodiment)
Fig. 1 (A) is the figure of the pattern representing the proximity printing photomask that the first embodiment relates to, Fig. 1 (B) is the figure of the pattern representing existing proximity printing photomask.
Photomask shown in Fig. 1 (A) and Fig. 1 (B) is all that the colored filter in order to form panel display board designs, and is mainly used in " minus (the ネ ガ type) pattern " that form clathrate or striated.Pattern is line image substantially, and the region beyond area of the pattern is all light shielding part.Further, negative photoresist (making the light-struck zone-hardened resist of exposure) is used to form pattern by proximity printing.The representative purposes of the photomask of present embodiment is, provides the lattice-shaped pattern etc. needed during colored filters such as manufacturing black matrix".Time most of, compare the proximity printing photomask being applicable to form pattern by using negative photoresist described above, but be not limited to these embodiments above-mentioned.
Photomask 1 shown in Fig. 1 (A) is provided with and makes the pattern 10a of the transmittance section of exposure light transmission and the pattern 11a of the photomask that exposure light is interdicted, and is also provided with the pattern 12a of the semi-permeable film only transmitting part exposure light.Described photomask 1 has: the transmittance section making exposure light transmission; The light shielding part of blocking exposure light; And while the phase place of exposure light is shifted a little, make the semi light transmitting part of part exposure light transmission.
Compare therewith, the photomask 100 shown in Fig. 1 (B) is the existing photomask of same purposes, and is only made up of the pattern 111a of the photomask making the pattern 110a of the transmittance section of exposure light transmission and blocking exposure light.
The pattern 12a of semi-permeable film is made up of the semi-permeable film of low phase place, and experimentally, its condition is: phase differential is 10 ~ 90 degree, and preferred phase range is 20 ~ 80 degree.Further, transmitance is 30 ~ 70%, and preferred transmitance scope is 40 ~ 60%, and now effect is good.
For the width of the semi-permeable film of low phase place adjoined with photomask, according to the optical condition of proximity printing device or the design load (i.e. A/F) of line image, its optimum value is also different, it is probably 0.3 μm ~ 3 μm, be preferably 0.5 ~ 1.5 μm, now effect can be better.
At this, be described to the material of the semi-permeable film of low phase place.In theory, the composition making MoSi (molybdenum silicide) film can be adjusted, make MoSi film become low phase place, control transmitance simultaneously.Described MoSi film in the manufacture process of conductor integrated circuit device, as phase-shift mask phase shifter and be widely used.But MoSi film price, when the manufacture for large flat display panel, becomes the principal element that manufacturing cost increases.
On the other hand, when using the semi-permeable film of chromium system, the phase differential of the semi-permeable film of low phase place near the edge part being arranged on pattern and transmittance section is set in less than 90 degree, control the interference by the exposure light of transmittance section and the exposure light by the semi-permeable film of low phase place with this, therefore can improve the exposure of the pattern of peristome.Particularly confirm by experiment: during line image for the formation of proximity printing photomask, compare existing line image, finer line image can be formed.
Fig. 2 (A) ~ Fig. 2 (E) represents the series of process sectional view of the photomask manufacturing process shown in (A) in Fig. 1.Fig. 2 (A) represents at the surface of transparency carrier 10 formation photomask 11, and is formed the pattern 11a of photomask by photoetching process.Fig. 2 (B) represents to cover the mode comprising the surface integral of the pattern 11a of the photomask being formed at photomask-blank under the state of Fig. 2 (A), forms the semi-permeable film 12 of low phase place.Fig. 2 (C) represents from the state of Fig. 2 (B), forms not shown photoresist, makes photoresist film patterning, and form photoresist 20a on the surface of the semi-permeable film of low phase place 12.
It should be noted that at this, when carrying out patterning to the semi-permeable film 12 of low phase place, need critically to carry out position alignment with the pattern of the photomask of lower floor.Give an example, when the pattern 11a of the photomask of ground floor is formed, in the outside as " alignment mark " the pattern forming region on photomask-blank, form the photomask pattern of not shown position alignment.Further, when forming the semi-permeable film of the low phase place of the second layer, only the part of this alignment mark is covered, do not form the semi-permeable film of low phase place of the second layer with the surface of the photomask pattern making the part of alignment mark.Accordingly, exposing the pattern of photomask in the most surface of alignment mark, is effective at the describing device of the reflected light type measuring the alignment light of irradiating from the face side of substrate.In addition, position alignment can also be carried out by image procossing.No matter be any, the pattern importantly enabling the photomask of ground floor carries out high-precision position alignment with the pattern of the semi-permeable film of the phase-shifts making the second layer.The gimmick of this position alignment can be directly used in the manufacture method of the first half (tophalf) the type photomask used in many gray-level light mask of panel display board.
Fig. 2 (D) represents: by the pattern 20a of photoresist, according to wet etching, forms the pattern 12a making the semi-permeable film of the phase-shifts of the second layer.In present embodiment, as mentioned above, the material as the semi-permeable film 12 of low phase place uses the chromium based material such as chromium oxide film or chromium nitride film, therefore can be suitable for known wet etching technique.Finally, remove the pattern 20a of photoresist thus complete the photomask shown in Fig. 2 (E).Photomask shown in Fig. 2 (E) represents: the part cutting off the sectional view of the photomask of Fig. 1 (A) with the cross section vertical with line image.
It should be noted that at this, viewed from plane during completed pattern, is not simple line image, but the cross part of pattern or kink is graded and combine, and can form the pattern of clathrate or striated etc. accordingly.For this pattern, the pattern of semi-permeable film forming banded phase-shifts along line image is adjoined with the pattern of photomask, thus makes by photomask exposing light shielding part that light carries out shading and being removed photomask and semi-permeable film and the part that directly do not contact of the transmittance section of exposing transparency carrier.
Accordingly, for as above this part, in the pattern 110a of transmittance section in the existing pattern shown in the edge part (Fig. 1 (B)) of line image and the boundary portion (the X portion in figure) of the pattern 112a of light shielding part, the phase differential of the semi-permeable film of low phase place arranged near the edge part of pattern and transmittance section is set as less than 90 degree, the interference by the exposure light of transmittance section and the exposure light by the semi-permeable film of low phase place can be suppressed thus, therefore can not reduce exposure, thus change the contrast of transmitting image.
The intensity distributions of exposure light when being exposed by proximity printing machine is represented relative to the photomask 1, Fig. 3 shown in Fig. 1 (A).Transverse axis in figure is that the longitudinal axis is the coordinate representing exposure (exposure intensity) with arbitrary scale (order Sheng) with the central authorities of line image for the coordinate (unit for μm) during initial point.The thickness of pattern 12a that make the photomask of the curve of (i) shown in figure ~ (iv), that especially make the semi-permeable film of phase-shifts is different, changes phase differential and transmitance in three ways accordingly, and investigates the distribution of exposure intensity.
The phase differential of the semi-permeable film of low phase place and transmitance
(i) phase differential 50 degree, transmitance 60.0%
(ii) phase differential 72 degree, transmitance 40.0%
(iii) phase differential 90 degree, transmitance 31.7%
(iv) semi-permeable film (existing) is not had
From the result of this experiment, the intensity distributions of light is exposed as curve (i) in the semi-permeable film that thickness is the thinnest, phase-difference control can be made minimum, and transmitance controls the highest, and expose if carry out under this condition, the contrast near edge of opening can significantly be improved.It should be noted that at this, because phase differential or transmitance also have impact to exposure wavelength, therefore need the relation investigating exposure light source and thickness in advance, check the phase differential and transmitance that can realize and thickness at that time with this.
It should be noted that at this, as the photomask arranging photomask and semi-permeable film on the transparent substrate, that be widely known by the people is the many gray scales (Duo Bands Tone used in the manufacturing process of the thin film transistor (TFT) of phase-shift mask or the panel display board used in the manufacturing process of semiconductor device) photomask etc., but these are compared with of the present utility model, at least following in some, the function of semi-permeable film exists different in essence.
The first, the former semi-permeable film is to form the fine pattern exceeding resolution limit and the film be attached in existing pattern, for making the film (phaser) of phase reversal (being shifted 180 degree).The semi-permeable film of the latter is conceived to the transmitance of semi-permeable film, for the film for being realized the medium tone (halftone) of transmittance section and light shielding part by exposure, the film for functioning as follows: semi-permeable film makes the part exposure of pattern be medium tone.To this, as mentioned above, in the utility model, for semi-permeable film, control phase shift and transmitance both sides, and less than 90 degree that phase-shift phase needs to be set in much smaller than 180 degree.
Second, the latter is the proximity printing photomask that the black matrix pattern of panel display board is formed, therefore comprise: such as many gray-level light mask, at least in pattern forming region, light shielding part shading being carried out to exposure light because of photomask with eliminate photomask and semi-permeable film and part that the transmittance section of exposing transparency carrier does not directly contact.In contrast to this, in phase-shift mask or many gray-level light mask, the part that light shielding part directly contacts with transmittance section is certainly existed.
When carrying out proximity printing in existing scale-of-two mask, the light of mixing g line, h line, i line is adopted to make to be about 100 μm close to gap (プ ロ キ シ ミ テ ィ ギ ャ ッ プ) in exposure light, thus obtain 6 A/Fs obtained, this has been the limit, if but adopt the photomask of present embodiment, then exposure is improved greatly, even if therefore expose with the same terms close to gap identical, also can realize the A/F of 4 μm.Wherein, G line wavelength is 436nm, I line wavelength be 365nm, H line wavelength is 405nm.
(the second embodiment)
In present embodiment, (that is, the so-called Lower Half type photomask) manufacture method first forming the semi-permeable film of low phase place is described.Even if manufacture method changes, during from the pattern of viewed in plan photomask, the configuration of transmittance section, translucent portion, light shielding part or size are also identical with the first embodiment.But photomask is different with the lamination order of the semi-permeable film of low phase place, on the semi-permeable film of low phase place, be formed with photomask, therefore the part forming photomask above of the semi-permeable film of low phase place becomes light shielding part.
Fig. 4 (A) ~ Fig. 4 (E) represents the series of process sectional view of the manufacturing process of the photomask of the second embodiment.Fig. 4 (A) expression forms the semi-permeable film 22 of low phase place and photomask 21 in the surface order of transparency carrier 10.Fig. 4 (B) represents under the state of Fig. 4 (A), by known photoetching process, forms the pattern 30a of photoresist after the surface formation photoresist of the photomask 21 on upper strata.
Fig. 4 (C) represents under the state of Fig. 4 (B), the pattern 30a of photoresist is carried out Wet-type etching as the photomask 21 of mask to upper strata, then removes the pattern 30a of photoresist.Accordingly, the pattern 21a of photomask is formed on semi-permeable film 22.Fig. 4 (D) represent under the state of Fig. 4 (C), by known photoetching process, comprise upper strata photomask pattern 21a photomask-blank 10 surface integral on form photoresist, then form the pattern 40a of photoresist.
Then, by the pattern 40a of photoresist, according to wet etching, form the pattern 12a making the semi-permeable film of the phase-shifts of ground floor, then finally remove the pattern 40a of photoresist, thus complete the photomask shown in Fig. 4 (E).
Even if according to above-mentioned technique, the photomask possessing the function identical with the proximity printing photomask illustrated in the first embodiment also can be completed.
It should be noted that at this, in above-mentioned embodiment (the first and second embodiment), to such as shown in Fig. 1 (A), the situation of the line image of the linearity do not bent is illustrated, even but shown in Fig. 5 (A), there is the line image of the boundary portion of the black matrix" figure of kink, or the poroid pattern that the pattern 10b of the transmittance section that the pattern 11b of the photomask shown in Fig. 5 (B) is arranged is formed, in both boundary portion, make the pattern 12b of the semi-permeable film of phase-shifts be set to band shape, therefore the exposure near edge part is increased, the contrast of transmitting image can be improved.
Experimental example
Fig. 6 (A) expression makes for the effect of the proximity printing photomask verifying above-mentioned present embodiment, proximity printing photomask 50.The middle body of photomask 50 is exposure region 51, is non-exposed area 52 outside it.Multiple pattern forming region 53 being provided with the various patterns (isolated line image, line and blank, rectangle (square) poroid pattern, isolated rectangular patterns) made for testing is set in exposure region 51.On the other hand, the identification sign etc. of alignment mark 54 or not shown photomask is provided with in non-exposed area 52.
Fig. 6 (B) is the picture taken near the boundary portion to exposure region and non-exposed area.The part that in this picture, dotted line represents is for being equivalent to the part in the bight of exposure region.Confirm: near secondary edge part, have a small amount of residue, but forming pattern there is no problem.
Fig. 7 (A) ~ (F) is the picture taken the various patterns formed in pattern forming region.It is in the isolated line image of 3.0 μm at A/F that Fig. 7 (A) ~ (C) represents, width is respectively the pattern of the semi-permeable film of 1.0 μm, 1.5 μm and 2.0 μm in banded.
Fig. 7 (D) for A/F be line and the blank of 3 μm.Fig. 7 (E) represents that width is the poroid pattern of the rectangle (square) of 3 μm, and Fig. 7 (F) represents that same width is the island-shaped pattern (Islandpattern) of 3 μm.In the pattern of the island system of Fig. 7 (F), semi-permeable film is almost beyond recognition, live width also cannot be measured, but any one in the pattern of Fig. 7 (A) ~ (C) and Fig. 7 (D) can form the clear pattern of the semi-permeable film making the band shape of phase-shifts.
Claims (9)
1. a proximity printing photomask, is characterized in that, possesses:
The pattern of transmittance section, the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier;
The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section,
Wherein, described semi-permeable film is, phase differential is 10 ~ 90 degree, and transmitance is the semi-permeable film of low phase place of 30 ~ 70% scopes,
Further, comprise in pattern forming region the part that light shielding part directly do not contact with transmittance section, and light shielding part carries out shading according to photomask to exposure light, transmittance section for eliminate photomask and semi-permeable film and be exposed to transparency carrier.
2. a proximity printing photomask, is characterized in that, possesses:
The pattern of transmittance section, the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier;
The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section,
Wherein, described semi-permeable film is, phase differential is 20 ~ 80 degree, and transmitance is the semi-permeable film of low phase place of 40 ~ 60% scopes,
Further, comprise in pattern forming region the part that light shielding part directly do not contact with transmittance section, and light shielding part carries out shading according to photomask to exposure light, transmittance section for eliminate photomask and semi-permeable film and be exposed to transparency carrier.
3. a proximity printing photomask, is characterized in that, possesses:
The pattern of transmittance section, the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier;
The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section,
Wherein, described semi-permeable film is, phase differential is 50 ~ 72 degree, and transmitance is the semi-permeable film of low phase place of 40 ~ 60% scopes,
Further, comprise in pattern forming region: light shielding part shading being carried out to exposure light by photomask with eliminate photomask and semi-permeable film and the part that directly do not contact of the transmittance section being exposed to transparency carrier.
4. a proximity printing photomask, is characterized in that, possesses:
The pattern of transmittance section, the transparency carrier of surface formation photomask removes a part for described light shielding part to be exposed to the transmittance section of described transparency carrier;
The pattern of semi-permeable film, forms the banded semi-permeable film making phase-shifts in the pattern both sides of the edge of described transmittance section,
Wherein, described semi-permeable film is, width is 0.3 ~ 3.0 μm, phase differential is 10 ~ 90%, and transmitance is the semi-permeable film of low phase place of 30 ~ 70% scopes,
And, comprise in pattern forming region: light shielding part shading being carried out to exposure light by photomask with eliminate photomask with semi-permeable film and the part that directly do not contact of the transmittance section being exposed to transparency carrier.
5. the proximity printing photomask according to Claims 1-4 any one, is characterized in that,
The material of the semi-permeable film of described low phase place comprise in chromium oxide film, chromium nitride film any one.
6. the proximity printing photomask according to Claims 1-4 any one, is characterized in that,
Described proximity printing photomask uses the light being mixed with g line, h line, i line when exposing.
7. the proximity printing photomask according to Claims 1-4 any one, is characterized in that, the width of described pattern is less than 6 μm.
8. the proximity printing photomask according to Claims 2 or 3, is characterized in that,
The width of the semi-permeable film adjoined with described light shielding part is 0.3 ~ 3.0 μm.
9. the proximity printing photomask according to Claims 1-4 any one, is characterized in that,
The width of the semi-permeable film adjoined with described light shielding part is 0.5 ~ 1.5 μm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-124833 | 2014-06-17 | ||
| JP2014124833A JP5668168B1 (en) | 2014-06-17 | 2014-06-17 | Proximity exposure photomask |
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| CN204790305U true CN204790305U (en) | 2015-11-18 |
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| CN201520328358.7U Active CN204790305U (en) | 2014-06-17 | 2015-05-20 | Photomask for proximity printing |
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| Country | Link |
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| JP (1) | JP5668168B1 (en) |
| KR (1) | KR101593366B1 (en) |
| CN (1) | CN204790305U (en) |
| TW (1) | TWI499861B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892142A (en) * | 2016-06-29 | 2016-08-24 | 武汉华星光电技术有限公司 | Black matrix photomask, method for preparing black matrix and application of black matrix photomask |
| CN113805428A (en) * | 2020-06-15 | 2021-12-17 | 株式会社Sk电子 | Proximity exposure photomask |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6557638B2 (en) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
| TW201823855A (en) * | 2016-09-21 | 2018-07-01 | 日商Ｈｏｙａ股份有限公司 | Method of manufacturing a photomask, photomask, and method of manufacturing a display device |
| TWI712851B (en) * | 2018-10-22 | 2020-12-11 | 日商Ｈｏｙａ股份有限公司 | Photomask, method of manufacturing a photomask, and method of manufacturing an electronic device |
| KR102367141B1 (en) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | Photomask, method for manufacturing photomask, and method for manufacturing display device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (en) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| US7045255B2 (en) * | 2002-04-30 | 2006-05-16 | Matsushita Electric Industrial Co., Ltd. | Photomask and method for producing the same |
| KR100676651B1 (en) * | 2004-12-03 | 2007-01-31 | 주식회사 에스앤에스텍 | Process of Blank Mask for Liquid Crystal Display |
| JP4848932B2 (en) | 2006-11-13 | 2011-12-28 | 大日本印刷株式会社 | Tone mask for proximity exposure |
| JP5702920B2 (en) * | 2008-06-25 | 2015-04-15 | Hoya株式会社 | Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank |
| TWI461833B (en) * | 2010-03-15 | 2014-11-21 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
| KR101151685B1 (en) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | Blankmask and photomask |
| JP2011186506A (en) * | 2011-07-01 | 2011-09-22 | Sk Electronics:Kk | Halftone photomask |
| JP6127977B2 (en) * | 2011-10-21 | 2017-05-17 | 大日本印刷株式会社 | Large phase shift mask and manufacturing method of large phase shift mask |
| JP2013246339A (en) * | 2012-05-28 | 2013-12-09 | Toppan Printing Co Ltd | Photomask and pattern exposure method using the same |
| KR102056509B1 (en) * | 2012-07-13 | 2019-12-16 | 호야 가부시키가이샤 | Mask blank and method for manufacturing phase-shift mask |
-
2014
- 2014-06-17 JP JP2014124833A patent/JP5668168B1/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892142A (en) * | 2016-06-29 | 2016-08-24 | 武汉华星光电技术有限公司 | Black matrix photomask, method for preparing black matrix and application of black matrix photomask |
| US10324325B2 (en) | 2016-06-29 | 2019-06-18 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Black matrix mask, method for manufacturing black matrix, and application thereof |
| CN113805428A (en) * | 2020-06-15 | 2021-12-17 | 株式会社Sk电子 | Proximity exposure photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI499861B (en) | 2015-09-11 |
| TW201531794A (en) | 2015-08-16 |
| JP5668168B1 (en) | 2015-02-12 |
| JP2016004174A (en) | 2016-01-12 |
| KR20150144684A (en) | 2015-12-28 |
| KR101593366B1 (en) | 2016-02-11 |
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