CN113777547A - Calibration judgment method and device for on-chip S parameter measurement system and terminal - Google Patents

Calibration judgment method and device for on-chip S parameter measurement system and terminal Download PDF

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CN113777547A
CN113777547A CN202110864583.2A CN202110864583A CN113777547A CN 113777547 A CN113777547 A CN 113777547A CN 202110864583 A CN202110864583 A CN 202110864583A CN 113777547 A CN113777547 A CN 113777547A
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CN113777547B (en
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霍晔
吴爱华
王一帮
梁法国
栾鹏
刘晨
孙静
张立飞
丁立强
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CETC 13 Research Institute
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Abstract

The invention provides a calibration judgment method, a calibration judgment device and a calibration judgment terminal for an on-chip S parameter measurement system. The method comprises the following steps: acquiring a reference S parameter of the passive device based on a reference on-chip calibration method and an on-chip S parameter measurement system; acquiring a target S parameter of the passive device based on a target on-chip calibration method and an on-chip S parameter measurement system; and determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is effective or not according to the maximum deviation. The invention can improve the reliability of the on-chip S parameter measuring system.

Description

Calibration judgment method and device for on-chip S parameter measurement system and terminal
Technical Field
The invention relates to the technical field of on-chip S parameter measurement, in particular to a method, a device and a terminal for calibrating and judging an on-chip S parameter measurement system.
Background
In the microelectronics industry, before using the "on-chip S parameter measurement system", a calibration method is selected to calibrate the system. The accuracy of the measurement of the parameters of the sheet S depends on the calibration method and calibration piece used. The on-chip calibration method mainly comprises a multi-Line TRL (Thru-reflector-Line), a SOLT (Short-Open-Load-Thru), an LRRM (Line-reflector-Match) and the like, each calibration method corresponds to different calibration algorithms, and the test efficiency and the test accuracy are different.
At present, most of calibration methods are only used for calibrating an on-chip S parameter measurement system, and whether the result of a passive device measured by the on-chip S parameter measurement system is real, effective or not cannot be accurately judged, so that hidden danger exists.
Disclosure of Invention
The embodiment of the invention provides a method, a device and a terminal for calibrating and judging an on-chip S parameter measuring system, which aim to solve the problem that whether the result of measuring a passive device by the on-chip S parameter measuring system is real, effective or not cannot be accurately judged.
In a first aspect, an embodiment of the present invention provides a method for determining calibration of an on-chip S parameter measurement system, including:
acquiring a reference S parameter of the passive device based on a reference on-chip calibration method and an on-chip S parameter measurement system;
acquiring a target S parameter of the passive device based on a target on-chip calibration method and an on-chip S parameter measurement system;
and determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is effective or not according to the maximum deviation.
In one possible implementation, determining the maximum deviation of the target S parameter from the reference S parameter based on the reference S parameter, the target S parameter, and the conversion relationship between the T parameter and the S parameter includes:
determining a target transmission matrix relational expression of the target on-chip calibration method based on the reference S parameter and the target S parameter;
and determining a maximum deviation calculation formula according to the target transmission matrix relation and the conversion relation between the T parameter and the S parameter, and determining the maximum deviation of the target S parameter relative to the reference S parameter according to the maximum deviation calculation formula.
In one possible implementation, the target transmission matrix relation is:
Figure BDA0003186852790000021
wherein the content of the first and second substances,
Figure BDA0003186852790000022
|ΔY1|<<1，X11、X12、X21、X22is a matrix DeltaX1Element (ii) Y11、Y12、Y21、Y22Is a matrix DeltaY1Element (E) is an identity matrix, TSFor the target transmission matrix, TMLReference transmission matrix, X, for reference on-chip calibration methodsMLFirst reference error network for reference on-chip calibration method, YMLTo reference the second reference error network of the on-chip calibration method,
Figure BDA0003186852790000023
XSfirst target error network, Y, for a target on-chip calibration methodSFor a second target error network of the target on-chip calibration method,
Figure BDA0003186852790000024
in one possible implementation, the conversion relationship between the T parameter and the S parameter includes:
reference parameter conversion relationship:
Figure BDA0003186852790000025
wherein S is11、S12、S21、S22Reference S parameter, T, for passive devices11、T12、T21、T22Is a reference T parameter;
target parameter conversion relationship:
Figure BDA0003186852790000031
wherein S is11S、S12S、S21S、S22SIs a target S parameter, T, of a passive device11S、T12S、T21S、T22SIs the target T parameter.
In one possible implementation, the maximum deviation calculation includes one or more of:
S11Smaximum deviation calculation formula of (1), S22SMaximum deviation calculation formula of (1), S12SMaximum deviation calculation formula of (1), S21SThe maximum deviation calculation formula of (4);
S11Sthe maximum deviation of (d) is calculated as:
|S11S-S11|≤|X11+X22Y11-X22-X11Y11|+(|X12|+|X21|)|1-Y11|+(|1+X11|+|X11-X22|+|X12|+2|X21|)|Y21|
S22Sthe maximum deviation of (d) is calculated as:
|S22S-S22|≤|Y11+X22Y11-Y22-X22Y22|+(|Y12|+|Y21|)|1+X22|+(|1-Y22|+|Y12+Y11|+|Y12|+2|Y21|)|X21|
S12Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000032
S21Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000033
wherein the S parameter of the passive device satisfies | Sij|≤1，i＝1,2，j＝1,2。
In one possible implementation, the determining whether the calibration of the target on-chip calibration method for the on-chip S parameter measurement system is valid according to the maximum deviation includes:
within a preset frequency band, if the maximum deviation is not greater than the maximum value of the maximum deviation in a predetermined maximum deviation curve, judging that the target on-chip calibration method is effective for calibration of the on-chip S parameter measurement system;
the method further comprises the following steps:
and respectively measuring the standard passive devices by using a reference S parameter calibration method and a target S parameter calibration method, calculating the maximum deviation value of each frequency in a preset frequency band according to the measured result, and drawing a predetermined maximum deviation curve according to the maximum deviation value of each frequency.
In one possible implementation, the reference on-chip calibration method is a multi-line TRL on-chip calibration method;
the target on-chip calibration method is a SOLT on-chip calibration method, an LRRM on-chip calibration method or a multi-line TRL on-chip calibration method.
In a second aspect, an embodiment of the present invention provides an apparatus for determining calibration of an on-chip S parameter measurement system, including:
the first acquisition module is used for acquiring a reference S parameter of the passive device based on a reference on-chip calibration method and an on-chip S parameter measurement system;
the second acquisition module is used for acquiring a target S parameter of the passive device based on the target on-chip calibration method and the on-chip S parameter measurement system;
and the calibration judging module is used for determining the maximum deviation of the target S parameter relative to the reference S parameter based on the reference S parameter, the target S parameter and the conversion relation between the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measuring system by the target on-chip calibration method is effective or not according to the maximum deviation.
In a third aspect, an embodiment of the present invention provides a terminal, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor, when executing the computer program, implements the steps of the method for determining calibration of a slice S parameter measurement system according to the first aspect or any possible implementation manner of the first aspect.
In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, where a computer program is stored, and the computer program, when executed by a processor, implements the steps of the method for determining calibration of a S-slice parameter measurement system according to the first aspect or any one of the possible implementations of the first aspect.
The embodiment of the invention provides a calibration judgment method, a calibration judgment device and a calibration judgment terminal for an on-chip S parameter measurement system, wherein a reference S parameter of a passive device is obtained by a reference on-chip calibration method and the on-chip S parameter measurement system; acquiring a target S parameter of the passive device based on a target on-chip calibration method and an on-chip S parameter measurement system; and determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is effective or not according to the maximum deviation. By calculating the maximum deviation of the target on-chip S calibration method relative to the reference on-chip S calibration method, whether the calibration of the target on-chip S calibration method is effective or not can be effectively judged, and the reliability of the on-chip S parameter measurement system is further improved.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a flowchart of an implementation of a calibration determination method for an on-chip S parameter measurement system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram comparing a target calibration method and a reference calibration method according to an embodiment of the present invention;
FIG. 3 shows the calibration S of the on-chip SOLT calibration method, the on-chip LRRM calibration method, and the on-chip multi-line TRL calibration method according to the embodiment of the present invention11Maximum deviation graph;
FIG. 4 shows the calibration S of the on-chip SOLT calibration method, the on-chip LRRM calibration method, and the on-chip multi-line TRL calibration method according to the embodiment of the present invention21Maximum deviation graph;
FIG. 5 shows the calibration S of the SOLT on-chip calibration method, LRRM on-chip calibration method, and multi-line TRL on-chip calibration method according to the embodiment of the present invention12Maximum deviation graph;
FIG. 6 shows the calibration S of the SOLT on-chip calibration method, LRRM on-chip calibration method, and multi-line TRL on-chip calibration method according to the embodiment of the present invention22Maximum deviation graph;
FIG. 7 is a schematic structural diagram of an on-chip S parameter measurement system calibration determination apparatus according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a terminal according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
Referring to fig. 1, it shows a flowchart of an implementation of the calibration determination method for an on-chip S parameter measurement system according to an embodiment of the present invention. As shown in fig. 1, a calibration determination method for an on-chip S parameter measurement system may include:
s101, acquiring reference S parameters of the passive device based on a reference on-chip calibration method and an on-chip S parameter measurement system.
Alternatively, in the microelectronics industry, the on-chip S-parameter measurement system needs to be error-calibrated when in use, so that the real S-parameters of the device under test can be obtained when the on-chip S-parameter measurement system is used for measurement. The reference on-chip calibration method is a reference on-chip calibration method, and in practical application, the calibration method with the highest calibration accuracy can be selected as the reference on-chip calibration method.
Optionally, the passive device is an electronic component capable of displaying its characteristics without an external power supply, and may be a resistor, a capacitor, an inductor, a converter, a fader, a matching network, a resonator, a filter, a mixer, a switch, or the like.
S102, acquiring target S parameters of the passive device based on the target on-chip calibration method and the on-chip S parameter measurement system.
Optionally, the target on-chip calibration method is a calibration method that needs to determine whether to calibrate effectively.
For example, refer to fig. 2, which shows a schematic diagram comparing a target calibration method and a reference calibration method provided by an embodiment of the present invention. As shown in fig. 2, the difference between the target calibration method and the reference calibration method is represented by a and B in the figure.
S103, determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is effective or not according to the maximum deviation.
Optionally, the T parameter is also referred to as a transmission parameter, and a conversion relationship exists between the T parameter and the S parameter.
The embodiment of the invention can quickly determine the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, has short time consumption due to the maximum deviation of the target S parameter relative to the reference S parameter, can reduce the calibration judgment time of the on-chip S parameter measuring system, can judge whether the on-chip S parameter measuring system adopting the target calibration method is successfully calibrated or not according to the maximum deviation, and is favorable for improving the reliability of the on-chip S parameter measuring system.
In some embodiments of the present invention, the "determining the maximum deviation of the target S-parameter from the reference S-parameter based on the conversion relationship between the reference S-parameter, the target S-parameter and the T-parameter and the S-parameter" in S103 may include:
step one, determining a target transmission matrix relational expression of the target on-chip calibration method based on the reference S parameter and the target S parameter.
Optionally, the reference transmission matrix relation of the reference S parameter may be obtained by referring to the passive device measured by the on-chip S parameter measurement system calibrated by the on-chip calibration method, and the target transmission matrix relation of the reference S parameter may be obtained by referring to the passive device measured by the on-chip S parameter measurement system calibrated by the target on-chip calibration method. Theoretically, for the same passive device, the transmission matrices are consistent, and therefore, a target transmission matrix relational expression in which the reference transmission matrix represents the target transmission matrix can be obtained by equalizing the reference transmission matrix relational expression and the target transmission matrix relational expression.
For example, after the on-chip S parameter measurement system is calibrated by using the calibration method, the following formula can be obtained:
Figure BDA0003186852790000071
wherein the content of the first and second substances,
Figure BDA0003186852790000072
Miis a transmission matrix, T, of a two-port passive device measured by an uncorrected on-chip S parameter measurement systemiFor the two-port passive device transmission matrix, X, Y is the error term for the two ports obtained by the selected calibration method.
And step two, determining a maximum deviation calculation formula according to the target transmission matrix relation and the conversion relation between the T parameter and the S parameter, and determining the maximum deviation of the target S parameter relative to the reference S parameter according to the maximum deviation calculation formula.
In some embodiments of the invention, the target transmission matrix relation is:
Figure BDA0003186852790000081
wherein the content of the first and second substances,
Figure BDA0003186852790000082
|ΔY1|<<1，X11、X12、X21、X22is a matrix DeltaX1Element (ii) Y11、Y12、Y21、Y22Is a matrix DeltaY1Element (E) is an identity matrix, TSFor the target transmission matrix, TMLReference transmission matrix, X, for reference on-chip calibration methodsMLFirst reference error network for reference on-chip calibration method, YMLTo reference the second reference error network of the on-chip calibration method,
Figure BDA0003186852790000083
XSfirst target error network, Y, for a target on-chip calibration methodSFor a second target error network of the target on-chip calibration method,
Figure BDA0003186852790000084
optionally, the process of determining the target transmission matrix relation is as follows:
s201, measuring the passive device by using a reference on-chip calibration method to obtain a reference transmission matrix, wherein the reference transmission matrix comprises the following steps:
Figure BDA0003186852790000085
s202, measuring the passive device by using a target on-chip calibration method to obtain a target transmission matrix, wherein the target transmission matrix comprises the following steps:
Figure BDA0003186852790000086
s203, ideally MMLAnd MSEqual, therefore, can make MMLAnd MSEqualisation to give the formula
Figure BDA0003186852790000087
S204, order
Figure BDA0003186852790000088
Ideally, X1、Y1Should be an identity matrix, but X due to different calibration methods1、Y1Not ideal and biased from the identity matrix. The deviation is represented by the following formula:
Figure BDA0003186852790000089
Figure BDA00031868527900000810
wherein, the unit matrix:
Figure BDA0003186852790000091
s205, obtaining formula (7) from formulae (1) to (6), as follows:
Figure BDA0003186852790000092
s206, due to | Δ Y1|<<1, formula (8) can be obtained as follows:
Figure BDA0003186852790000093
s207, the target transmission matrix relation (9) can be obtained from the equations (7) and (8), as follows:
Figure BDA0003186852790000094
in some embodiments of the present invention, the transformation relationship between the T parameter and the S parameter comprises:
reference parameter conversion relationship:
Figure BDA0003186852790000095
wherein S is11、S12、S21、S22Reference S parameter, T, for passive devices11、T12、T21、T22Is a reference T parameter;
target parameter conversion relationship:
Figure BDA0003186852790000096
wherein S is11S、S12S、S21S、S22SIs a target S parameter, T, of a passive device11S、T12S、T21S、T22SIs the target T parameter.
Alternatively to this, the first and second parts may,
Figure BDA0003186852790000097
in some embodiments of the invention, the maximum deviation calculation includes one or more of:
S11Smaximum deviation calculation formula of (1), S22SMaximum deviation calculation formula of (1), S12SMaximum deviation calculation formula of (1), S21SThe maximum deviation calculation formula of (4);
S11Sthe maximum deviation of (d) is calculated as:
|S11S-S11|≤|X11+X22Y11-X22-X11Y11|+(|X12|+|X21|)|1-Y11|+(|1+X11|+|X11-X22|+|X12|+2|X21|)|Y21|
S22Sthe maximum deviation of (d) is calculated as:
|S22S-S22|≤|Y11+X22Y11-Y22-X22Y22|+(Y12|+|Y21|)|1+X22|+(|1-Y22|+|Y12+Y11|+|Y12|+2|Y21|)|X21|
S12Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000101
S21Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000102
wherein the S parameter of the passive device satisfies | Sij|≤1，i＝1,2，j＝1,2。
Optionally, the process of determining the maximum deviation calculation formula is as follows:
s301, a deviation matrix relation (10) is obtained from the expressions (1) to (9) and the reference parameter conversion relation and the target parameter conversion relation, as follows:
Figure BDA0003186852790000103
wherein the content of the first and second substances,
A＝T11+T11X11+T21X12-T11Y22-T12Y12-T11X11Y22-T21X12Y22-T12X11Y12-T22X12Y12
B＝T12+T12X11+T22Y12-T11Y21-T12Y11-T11X11Y21-T21X12Y21-T12X11Y11-T22X12Y11
C＝T21+T11X21+T21X22-T21Y22-T22Y12-T11X21Y22-T21X22Y22-T12X21Y12-T22X22Y12
D＝T22+T12X21+T22X22-T21Y21-T22Y11-T11X21Y21-T21X22Y21-T12X21Y11-T22X22Y11
where A, B, C, D is an element in the deviation matrix.
S302, determining S11SThe maximum deviation calculation formula of (2) is as follows:
equation (11) can be derived from the reference parameter conversion relationship, the target parameter conversion relationship, and equation (10), as follows:
Figure BDA0003186852790000104
formula (12) is derived from formula (11) as follows:
Figure BDA0003186852790000111
formula (13) is derived from formula (12) as follows:
Figure BDA0003186852790000112
formula (14) is derived from formula (13) as follows:
Figure BDA0003186852790000113
formula (15) is derived from formula (14) as follows:
Figure BDA0003186852790000114
the S parameter of the passive device satisfies | S ij1,2, and S is derived from formula (15)11SThe maximum deviation calculation formula of (c) is as follows:
|S11S-S11|≤|X11+X22Y11-X22-X11Y11|+(|X12|+|X21|)|1-Y11|+(|1+X11|+|X11-X22|+|X12|+2|X21|)|Y21|
s303, determining S21SThe maximum deviation calculation formula of (2) is as follows:
equation (16) can be derived from the reference parameter conversion relationship, the target parameter conversion relationship, and equation (10), as follows:
Figure BDA0003186852790000115
formula (17) is derived from formula (16) as follows:
Figure BDA0003186852790000116
equation (18) is derived from equation (17) as follows:
Figure BDA0003186852790000117
equation (19) is derived from equation (18) as follows:
Figure BDA0003186852790000121
equation (20) is derived from equation (19) as follows:
Figure BDA0003186852790000122
the S parameter of the passive device satisfies | S ij1,2, and S is derived from formula (20)21SThe maximum deviation calculation formula of (c) is as follows:
Figure BDA0003186852790000123
s304, determining S12SThe maximum deviation calculation formula of (2) is as follows:
equation (21) is derived from the reference parameter conversion relationship, the target parameter conversion relationship, and equation (10), as follows:
Figure BDA0003186852790000124
equation (22) is derived from equation (21) as follows:
Figure BDA0003186852790000125
equation (23) is derived from equation (22) as follows:
Figure BDA0003186852790000126
equation (24) is derived from equation (23) as follows:
Figure BDA0003186852790000127
equation (25) is derived from equation (24) as follows:
Figure BDA0003186852790000131
the S parameter of the passive device satisfies | S ij1,2, S is obtained from formula (25)12SThe maximum deviation calculation formula of (c) is as follows:
Figure BDA0003186852790000132
s305, determining S22SThe maximum deviation calculation formula of (2) is as follows:
equation (26) is derived from the reference parameter transformation relationship, the target parameter transformation relationship, and equation (10), as follows:
Figure BDA0003186852790000133
equation (27) is derived from equation (26) as follows:
Figure BDA0003186852790000134
equation (28) is derived from equation (27) as follows:
Figure BDA0003186852790000135
equation (29) is derived from equation (28) as follows:
Figure BDA0003186852790000137
equation (30) is derived from equation (29) as follows:
Figure BDA0003186852790000136
the S parameter of the passive device satisfies | S ij1,2, S is obtained from formula (25)22SThe maximum deviation calculation formula of (c) is as follows:
|S22S-S22|≤|Y11+X22Y11-Y22-X22Y22|+(|Y12|+|Y21|)|1+X22|+(|1-Y22|+|Y12+Y11|+|Y12|+2|Y21|)|X21|
in some embodiments of the present invention, the "determining whether the calibration of the on-chip S parameter measurement system by the target on-chip calibration method is valid according to the maximum deviation" in S103 may include:
within a preset frequency band, if the maximum deviation is not greater than the maximum value of the maximum deviation in a predetermined maximum deviation curve, judging that the target on-chip calibration method is effective for calibration of the on-chip S parameter measurement system;
the method further comprises the following steps:
and respectively measuring the standard passive devices by using a reference S parameter calibration method and a target S parameter calibration method, calculating the maximum deviation value of each frequency in a preset frequency band according to the measured result, and drawing a predetermined maximum deviation curve according to the maximum deviation value of each frequency.
Optionally, the selection of each frequency point in the preset frequency band may be selected according to the actual sampling interval.
Optionally, the method may further include:
and in a preset frequency band, if the maximum deviation is greater than the maximum value of the maximum deviation in a predetermined maximum deviation curve, judging that the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is invalid.
Optionally, the method may further include:
if the maximum deviation is not larger than the maximum deviation value of the frequency point in a predetermined maximum deviation curve at the measured frequency point, judging that the target on-chip calibration method is effective for calibrating the on-chip S parameter measurement system;
and at the measured frequency point, if the maximum deviation is greater than the maximum deviation value of the frequency point in the predetermined maximum deviation curve, judging that the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is invalid.
In some embodiments of the invention, the reference on-chip calibration method is a multi-line TRL on-chip calibration method;
the target on-chip calibration method is a SOLT on-chip calibration method, an LRRM on-chip calibration method or a multi-line TRL on-chip calibration method.
The calibration judgment method of the on-chip S parameter measurement system provided by the embodiment of the present invention is explained by using a test analysis example. In this example, the calibration determination method of the on-chip S parameter measurement system is used to process and obtain the curves of the maximum deviation in the frequency band of 0 to 67GHz between each two calibration methods of the salt on-chip calibration method, the LRRM on-chip calibration method, and the multi-line TRL on-chip calibration method, which are specifically referred to fig. 3 to 6.
Referring to fig. 3, it shows calibration S of the sol lt on-chip calibration method, the LRRM on-chip calibration method, and the multi-line TRL on-chip calibration method provided by the embodiment of the present invention11Maximum deviation graph; wherein S is11Deviation using | S11S-S11MLAnd l represents that MTRL _ LRRM is the maximum deviation of the measurement results of the LRRM calibration method and the multi-line TRL calibration method, MTRL _ SOLT represents the maximum deviation of the measurement results of the SOLT calibration method and the multi-line TRL calibration method, and MTRL _ MTRL represents the maximum deviation of the measurement results of the multi-line TRL calibration method twice.
Referring to fig. 4, it shows calibration S of the sol lt on-chip calibration method, the LRRM on-chip calibration method, and the multi-line TRL on-chip calibration method provided by the embodiment of the present invention21Maximum deviation graph; wherein S is21Deviation using | S21S-S21ML|/S21MLAnd l represents that MTRL _ LRRM is the maximum deviation of the measurement results of the LRRM calibration method and the multi-line TRL calibration method, MTRL _ SOLT represents the maximum deviation of the measurement results of the SOLT calibration method and the multi-line TRL calibration method, and MTRL _ MTRL represents the maximum deviation of the measurement results of the multi-line TRL calibration method twice.
Referring to fig. 5, it shows calibration S of the sol lt on-chip calibration method, the LRRM on-chip calibration method, and the multi-line TRL on-chip calibration method provided by the embodiment of the present invention12Maximum deviation graph; wherein S is12Deviation using | S12S-S12ML|/S12MLAnd l represents that MTRL _ LRRM is the maximum deviation of the measurement results of the LRRM calibration method and the multi-line TRL calibration method, MTRL _ SOLT represents the maximum deviation of the measurement results of the SOLT calibration method and the multi-line TRL calibration method, and MTRL _ MTRL represents the maximum deviation of the measurement results of the multi-line TRL calibration method twice.
Referring to fig. 6, it shows calibration S of the sol lt on-chip calibration method, the LRRM on-chip calibration method, and the multi-line TRL on-chip calibration method provided by the embodiment of the present invention22Maximum deviation graph; wherein S is22Deviation using | S22S-S22MLAnd l represents that MTRL _ LRRM is the maximum deviation of the measurement results of the LRRM calibration method and the multi-line TRL calibration method, MTRL _ SOLT represents the maximum deviation of the measurement results of the SOLT calibration method and the multi-line TRL calibration method, and MTRL _ MTRL represents the maximum deviation of the measurement results of the multi-line TRL calibration method twice.
From the above, the following conclusions can be drawn:
1) for the passive device, if the maximum deviation of the measurement results of the two multi-line TRL calibration methods is not larger than the maximum value in MTRL _ MTRL, the maximum deviation of the measurement results of the LRRM calibration method and the multi-line TRL calibration method is not larger than the maximum value in MTRL _ LRRM, and the maximum deviation of the measurement results of the SOLT calibration method and the multi-line TRL calibration method is not larger than the maximum value in MTRL _ SOLT, the fact that the passive device is really effective in the S parameter measurement result is shown. If the maximum deviation value is exceeded, the calibration of the S parameter measurement system on the wafer is not ideal, the deviation occurs, the test data is unreliable, and the recalibration is needed.
2) In the 0-67 GHz band, the accuracy of SOLT is equal to that of LRRM in the 40GHz and lower bands, and the accuracy of LRRM is higher than that of SOLT in the 40GHz and higher bands. The appropriate calibration method can be guided in the test of the passive device.
The embodiment of the invention has the characteristics that:
and establishing a relational expression of error term differences under other calibration methods and the multi-line TRL calibration method by using the multi-line TRL calibration method as a reference standard and a matrix cascade method.
And calculating to obtain the maximum deviation of the four S parameters of the passive device measured by other calibration methods and the multi-line TRL calibration method through the relational expression of the error term difference.
The calculation is performed by interconversion between the S-parameters and the T-parameters.
According to the invention, the maximum deviation of four S parameters of the passive device is respectively calculated by combining the conversion relation between the T parameter and the S parameter through the relational expression of error term difference under other calibration methods and a multi-line TRL calibration method. In the aspect of S parameter calibration and test of passive devices, optimization of a calibration method and maximum deviation under different calibration methods can be realized, better indexes are achieved, the on-chip S parameter calibration and test work for commercial use in the market is met, and certain economic and social benefits are achieved.
In the embodiment of the invention, the multiline TRL calibration method with the highest calibration accuracy is used as a reference standard, and the maximum deviation of S parameters of the passive device measured by other calibration methods and the multiline TRL calibration method is calculated by comparing the difference of error items of different calibration methods, so that whether the on-chip S parameter measurement result of the passive device is real and effective is judged, a proper calibration method is selected in the test, the time is saved, and the efficiency is improved.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
The following are embodiments of the apparatus of the invention, reference being made to the corresponding method embodiments described above for details which are not described in detail therein.
Fig. 7 is a schematic structural diagram of an on-chip S parameter measurement system calibration determination apparatus according to an embodiment of the present invention, and for convenience of description, only the parts related to the embodiment of the present invention are shown, which is detailed as follows:
as shown in fig. 7, the on-chip S parameter measurement system calibration determination device 40 may include:
a first obtaining module 410, configured to obtain a reference S parameter of the passive device based on a reference on-chip calibration method and an on-chip S parameter measurement system;
a second obtaining module 420, configured to obtain a target S parameter of the passive device based on the target on-chip calibration method and the on-chip S parameter measurement system;
and the calibration judging module 430 is configured to determine a maximum deviation of the target S parameter relative to the reference S parameter based on the reference S parameter, the target S parameter, and a conversion relationship between the T parameter and the S parameter, and judge whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is valid according to the maximum deviation.
In some embodiments of the present invention, the calibration determining module 430 may include:
the matrix calculation unit is used for determining a target transmission matrix relational expression of the target on-chip calibration method based on the reference S parameter and the target S parameter;
and the deviation calculation unit is used for determining a maximum deviation calculation formula according to the target transmission matrix relation and the conversion relation between the T parameter and the S parameter, and determining the maximum deviation of the target S parameter relative to the reference S parameter according to the maximum deviation calculation formula.
In some embodiments of the invention, the target transmission matrix relation is:
Figure BDA0003186852790000171
wherein the content of the first and second substances,
Figure BDA0003186852790000172
|ΔY1|<<1，X11、X12、X21、X22is a matrixΔX1Element (ii) Y11、Y12、Y21、Y22Is a matrix DeltaY1Element (E) is an identity matrix, TSFor the target transmission matrix, TMLReference transmission matrix, X, for reference on-chip calibration methodsMLFirst reference error network for reference on-chip calibration method, YMLTo reference the second reference error network of the on-chip calibration method,
Figure BDA0003186852790000181
XSfirst target error network, Y, for a target on-chip calibration methodSFor a second target error network of the target on-chip calibration method,
Figure BDA0003186852790000182
in some embodiments of the present invention, the transformation relationship between the T parameter and the S parameter comprises:
reference parameter conversion relationship:
Figure BDA0003186852790000183
wherein S is11、S12、S21、S22Reference S parameter, T, for passive devices11、T12、T21、T22Is a reference T parameter;
target parameter conversion relationship:
Figure BDA0003186852790000184
wherein S is11S、S12S、S21S、S22SIs a target S parameter, T, of a passive device11S、T12S、T21S、T22SIs the target T parameter.
In some embodiments of the invention, the maximum deviation calculation includes one or more of:
S11Smaximum deviation calculation formula of (1), S22SMaximum deviation calculation formula of (1), S12SMaximum deviation calculation formula of (1), S21SThe maximum deviation calculation formula of (4);
S11Sthe maximum deviation of (d) is calculated as:
|S11S-S11|≤|X11+X22Y11-X22-X11Y11|+(X12|+|X21|)|1-Y11|+(|1+X11|+|X11-X22|+|X12|+2|X21|)|Y21|
S22Sthe maximum deviation of (d) is calculated as:
|S22S-S22|≤|Y11+X22Y11-Y22-X22Y22|+(Y12|+|Y21|)|1+X22|+(|1-Y22|+|Y12+Y11|+|Y12|+2|Y21|)|X21|
S12Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000191
S21Sthe maximum deviation of (d) is calculated as:
Figure BDA0003186852790000192
wherein the S parameter of the passive device satisfies | Sij|≤1，i＝1,2，j＝1,2。
In some embodiments of the present invention, the calibration determining module 430 may further include:
the first calibration judgment unit is used for judging that the target on-chip calibration method is effective to the calibration of the on-chip S parameter measurement system if the maximum deviation is not greater than the maximum value of the maximum deviation in a predetermined maximum deviation curve in a preset frequency band;
the calibration determining module 430 may further include:
and the curve drawing module is used for respectively measuring the standard passive devices by the reference S parameter calibration method and the target S parameter calibration method, calculating the maximum deviation value of each frequency in the preset frequency band according to the respectively measured result, and drawing a predetermined maximum deviation curve according to the maximum deviation value of each frequency.
In some embodiments of the present invention, the calibration determining module 430 may further include:
and the second calibration judgment unit is used for judging that the calibration of the target on-chip calibration method to the on-chip S parameter measurement system is invalid if the maximum deviation is larger than the maximum value of the maximum deviation in the predetermined maximum deviation curve in the preset frequency band.
In some embodiments of the present invention, the calibration determining module 430 may further include:
the third calibration judging unit is used for judging that the target on-chip calibration method is effective to the calibration of the on-chip S parameter measuring system if the maximum deviation is not greater than the maximum deviation value of the frequency point in a predetermined maximum deviation curve at the measured frequency point;
and the fourth calibration judging unit is used for judging that the calibration of the target on-chip calibration method on the on-chip S parameter measuring system is invalid if the maximum deviation of the measured frequency point is greater than the maximum deviation value of the frequency point in a predetermined maximum deviation curve.
In some embodiments of the invention, the reference on-chip calibration method is a multi-line TRL on-chip calibration method;
the target on-chip calibration method is a SOLT on-chip calibration method, an LRRM on-chip calibration method or a multi-line TRL on-chip calibration method.
Fig. 8 is a schematic diagram of a terminal according to an embodiment of the present invention. As shown in fig. 8, the terminal 50 of this embodiment includes: a processor 500, a memory 501, and a computer program 502 stored in the memory 501 and executable on the processor 500. The processor 500, when executing the computer program 502, implements the various steps described above in the embodiments of the calibration determination method for the S-slice parameter measurement system, such as S101 to S103 shown in fig. 1. Alternatively, the processor 500, when executing the computer program 502, implements the functions of the modules/units in the above-described device embodiments, such as the modules/units 410 to 430 shown in fig. 7.
Illustratively, the computer program 502 may be partitioned into one or more modules/units, which are stored in the memory 501 and executed by the processor 500 to implement the present invention. One or more of the modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution of the computer program 502 in the terminal 50. For example, the computer program 502 may be divided into the modules/units 410 to 430 shown in fig. 7.
The terminal 50 may be a computing device such as a desktop computer, a notebook, a palm top computer, and a cloud server. The terminal 50 may include, but is not limited to, a processor 500, a memory 501. Those skilled in the art will appreciate that fig. 5 is merely an example of a terminal 50 and does not constitute a limitation of terminal 50 and may include more or fewer components than shown, or some of the components may be combined, or different components, e.g., the terminal may also include input-output devices, network access devices, buses, etc.
The Processor 500 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The storage 501 may be an internal storage unit of the terminal 50, such as a hard disk or a memory of the terminal 50. The memory 501 may also be an external storage device of the terminal 50, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like provided on the terminal 50. Further, the memory 501 may also include both an internal storage unit of the terminal 50 and an external storage device. The memory 501 is used for storing computer programs and other programs and data required by the terminal. The memory 501 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules, so as to perform all or part of the functions described above. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus/terminal and method may be implemented in other ways. For example, the above-described apparatus/terminal embodiments are merely illustrative, and for example, a module or a unit may be divided into only one logical function, and may be implemented in other ways, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow of the method according to the above embodiments may be implemented by a computer program, which is stored in a computer readable storage medium and used for instructing related hardware to implement the steps of the calibration determination method for an on-chip S parameter measurement system when executed by a processor. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may include any suitable increase or decrease as required by legislation and patent practice in the jurisdiction, for example, in some jurisdictions, computer readable media may not include electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.

Claims (10)

1. A calibration judgment method for an on-chip S parameter measurement system is characterized by comprising the following steps:
acquiring a reference S parameter of the passive device based on a reference on-chip calibration method and the on-chip S parameter measurement system;
acquiring a target S parameter of the passive device based on a target on-chip calibration method and the on-chip S parameter measurement system;
and determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip S parameter measurement system by the target on-chip calibration method is effective or not according to the maximum deviation.
2. The on-chip S-parameter measurement system calibration judgment method of claim 1, wherein the determining the maximum deviation of the target S-parameter from the reference S-parameter based on the reference S-parameter, the target S-parameter and a conversion relationship between T-parameter and S-parameter comprises:
determining a target transmission matrix relation of the target on-chip calibration method based on the reference S parameter and the target S parameter;
and determining a maximum deviation calculation formula according to the target transmission matrix relation and the conversion relation between the T parameter and the S parameter, and determining the maximum deviation of the target S parameter relative to the reference S parameter according to the maximum deviation calculation formula.
3. The on-chip S parameter measurement system calibration determination method of claim 2,
the target transmission matrix relational expression is as follows:
Figure FDA0003186852780000011
wherein the content of the first and second substances,
Figure FDA0003186852780000012
|ΔY1|<<1，X11、X12、X21、X22is a matrix DeltaX1Element (ii) Y11、Y12、Y21、Y22Is a matrix DeltaY1Element (E) is an identity matrix, TSFor the target transmission matrix, TMLReference transmission matrix, X, for said reference on-chip calibration methodMLA first reference error network, Y, for said reference on-chip calibration methodMLA second reference error network for the reference on-chip calibration method,
Figure FDA0003186852780000021
XSa first target error network, Y, of an on-chip calibration method for said targetSA second target error network for the target on-chip calibration method,
Figure FDA0003186852780000022
4. the on-chip S parameter measurement system calibration judgment method of claim 3, wherein the conversion relationship between the T parameter and the S parameter comprises:
reference parameter conversion relationship:
Figure FDA0003186852780000023
wherein S is11、S12、S21、S22Is a reference S parameter, T, of the passive device11、T12、T21、T22Is a reference T parameter;
target parameter conversion relationship:
Figure FDA0003186852780000024
wherein S is11S、S12S、S21S、S22SIs a target S parameter, T, of the passive device11S、T12S、T21S、T22SIs the target T parameter.
5. The on-chip S parameter measurement system calibration decision method of claim 3, wherein the maximum deviation calculation includes one or more of:
S11Smaximum deviation calculation formula of (1), S22SMaximum deviation calculation formula of (1), S12SMaximum deviation calculation formula of (1), S21SThe maximum deviation calculation formula of (4);
said S11SThe maximum deviation of (d) is calculated as:
|S11S-S11|≤
|X11+X22Y11-X22-X11Y11|+(|X12|+|X21|)|1-Y11|+(|1+X11|+|X11-X22|+|X12|+2|X21|)|Y21|
said S22SThe maximum deviation of (d) is calculated as:
|S22S-S22|≤
|Y11+X22Y11-Y22-X22Y22|+(|Y12|+|Y21|)|1+X22|+(|1-Y22|+|Y12+Y11|+|Y12|+2|Y21|)|X21|
said S12SThe maximum deviation of (d) is calculated as:
Figure FDA0003186852780000031
said S21SThe maximum deviation of (d) is calculated as:
Figure FDA0003186852780000032
wherein the S parameter of the passive device satisfies | Sij|≤1，i＝1,2，j＝1,2。
6. The on-chip S parameter measurement system calibration determination method of claim 1, wherein said determining whether calibration of the on-chip S parameter measurement system by the target on-chip calibration method is valid according to the maximum deviation comprises:
within a preset frequency band, if the maximum deviation is not greater than the maximum value of the maximum deviation in a predetermined maximum deviation curve, judging that the target on-chip calibration method is effective in calibrating the on-chip S parameter measurement system;
the method further comprises the following steps:
and respectively measuring standard passive devices by the reference S parameter calibration method and the target S parameter calibration method, calculating the maximum deviation value of each frequency in the preset frequency band according to the measured result, and drawing the predetermined maximum deviation curve according to the maximum deviation value of each frequency.
7. The on-chip S parameter measurement system calibration determination method according to any one of claims 1 to 6,
the reference on-chip calibration method is a multi-line TRL on-chip calibration method;
the target on-chip calibration method is a SOLT on-chip calibration method, an LRRM on-chip calibration method or a multi-line TRL on-chip calibration method.
8. An on-chip S parameter measurement system calibration judgment device, comprising:
the first acquisition module is used for acquiring a reference S parameter of the passive device based on a reference on-chip calibration method and the on-chip S parameter measurement system;
the second acquisition module is used for acquiring a target S parameter of the passive device based on a target on-chip calibration method and the on-chip S parameter measurement system;
and the calibration judging module is used for determining the maximum deviation of the target S parameter relative to the reference S parameter based on the conversion relation among the reference S parameter, the target S parameter and the T parameter and the S parameter, and judging whether the calibration of the target on-chip calibration method on the on-chip S parameter measurement system is effective or not according to the maximum deviation.
9. A terminal comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor when executing the computer program implements the steps of the method for determining calibration of an S-parameter measuring system according to any of the preceding claims 1 to 7.
10. A computer-readable storage medium, in which a computer program is stored, which, when being executed by a processor, carries out the steps of the method for determining calibration of an S-parameter measurement system according to any one of claims 1 to 7.
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