CN111025214A - Method for obtaining power calibration model and terminal equipment - Google Patents
Method for obtaining power calibration model and terminal equipment Download PDFInfo
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- CN111025214A CN111025214A CN201911185123.6A CN201911185123A CN111025214A CN 111025214 A CN111025214 A CN 111025214A CN 201911185123 A CN201911185123 A CN 201911185123A CN 111025214 A CN111025214 A CN 111025214A
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Abstract
The invention is suitable for the technical field of non-real-time on-chip load traction measurement, and provides a method for acquiring a power calibration model and terminal equipment, wherein the method comprises the following steps: obtaining S parameters and reflection coefficients of each component in the sheet load traction system; calibrating the output power of a straight-through piece accessed in the piece load traction system based on different source powers of a signal source in the piece load traction system, and obtaining the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece according to the S parameter and the reflection coefficient; the power calibration model is constructed according to the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece, so that the power measurement is carried out by adopting the power calibration model, the calibration of the output power can be carried out before the output power measurement is carried out in a nonlinear state, the system measurement index and performance when the power device is measured can be improved, and the complexity of the measurement process is reduced.
Description
Technical Field
The invention belongs to the technical field of non-real-time on-chip load traction measurement, and particularly relates to a method for acquiring a power calibration model and terminal equipment.
Background
When the sheet load traction measurement system is used for measuring the output power, self calibration is required according to the prompt of system measurement software, wherein the self calibration comprises source power calibration measurement and S parameter calibration measurement. After self calibration is completed, the S parameter stored in the on-chip load traction measurement system software is used for measurement, namely the output power end face measured by the microwave power meter in the on-chip load traction measurement system is calculated to the output probe end face 2 of the measured piece from the end face 4, so that the output power measurement of the measured piece under different load reflection coefficients is realized. However, the prior art can only verify the measurement performance of the system in the linear working area, cannot ensure the measurement indexes and performance of the system when measuring the power device in the nonlinear state, and has a complex measurement process.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method and a terminal device for obtaining a power calibration model, which calibrate output power before output power measurement in a nonlinear state, so as to improve system measurement indexes and performance when measuring a power device and reduce complexity of a measurement process.
A first aspect of an embodiment of the present invention provides a method for obtaining a power calibration model, including:
obtaining S parameters and reflection coefficients of each component in the sheet load traction system;
calibrating the output power of a straight-through member accessed into the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtaining the output power of each power measurement end face of the straight-through member and the input power of the straight-through member according to the S parameter and the reflection coefficient;
and constructing a power calibration model according to the output power of each power measurement end surface of the straight-through piece and the input power of the straight-through piece, so as to measure the power by adopting the power calibration model.
In one embodiment, the obtaining of the S-parameters and the reflection coefficients of the respective components in the sheet load traction system comprises:
calibrating S parameters from a power measuring end face 3 to a power measuring end face 1, S parameters from a power measuring end face 2 to a power measuring end face 4 and a reflection coefficient of a microwave power meter in a chip load traction system by adopting a vector network analyzer;
adopting a vector network analyzer to calibrate S parameters of the impedance tuner in different impedance states;
and acquiring the calibrated S parameter and the reflection coefficient.
In one embodiment, the through piece is connected between the power measuring end face 1 and the power measuring end face 2 in the plate load traction system;
the obtaining of the output power of each power measurement end surface of the feedthrough and the input power of the feedthrough includes:
based on different source powers of the signal source in the on-chip load traction system, a microwave power meter in the on-chip load traction system is adopted to calibrate the output power of the through piece at the power measurement end face 4, so that the output power displayed by the microwave power meter in the calibration process and the reflection coefficients of different power measurement end faces are obtained;
and obtaining the output power of each power measuring end face of the straight-through piece and the input power of the straight-through piece according to the S parameter, the output power and the reflection coefficients of the different power measuring end faces.
In an embodiment, the obtaining the output power of each power measuring end surface of the feedthrough and the input power of the feedthrough according to the S parameter, the output power, and the reflection coefficients of the different power measuring end surfaces includes:
calculating to obtain the output power of the power measuring end face 2 according to the S parameter from the power measuring end face 2 to the power measuring end face 4 when the load impedance tuner in the chip load traction system is in the initial state, the output power and the reflection coefficient of the power measuring end face 4;
calculating and obtaining the reflection coefficients from the power measuring end surface 2 to the load end according to the S parameters from the power measuring end surface 2 to the power measuring end surface 4 and the reflection coefficients of the power measuring end surface 4 when the load impedance tuner in the chip load traction system is in the initial state;
calculating to obtain the output power of the power measuring end face 1 according to the S parameter of the straight-through piece, the reflection coefficient from the power measuring end face 2 to the load end and the output power of the power measuring end face 2;
calculating to obtain the output power of the power measuring end face 3 according to the S parameter from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 1 to the load end, the reflection coefficient from the power measuring end face 3 to the signal source end, the reflection coefficient from the power measuring end face 3 to the load end and the output power of the power measuring end face 1 when the source impedance tuner in the chip load traction system is in the initial state;
and calculating to obtain the input power of the through piece according to the S parameter from the power measuring end surface 3 to the power measuring end surface 1, the reflection coefficient from the power measuring end surface 3 to the signal source end and the output power of the power measuring end surface 3 when the source impedance tuner in the chip load traction system is in the initial state.
In one embodiment, the calculating to obtain the output power of the power measuring end face 2 includes:
according to
Calculating to obtain the output power of the power measuring end face 2;
wherein, P2Represents the output power of the power measuring end face 2,
is representative of the output power of the power converter,
power measuring terminalPower gain, Γ, between the surface 2 and the power measuring end surface 4PDenotes the reflection coefficient, s, of the power-measuring end face 4ijS-parameters of the power measuring end surfaces 2 to 4 are shown when the load impedance adapter in the chip load traction system is in the initial state.
In one embodiment, the calculating to obtain the output power of the power measuring end face 1 includes:
according to
Calculating to obtain the output power of the power measuring end face 1;
wherein, P1Denotes the output power, G, of the power measuring end face 1thruRepresenting the power gain, Γ, of the feedthroughLRepresenting the reflection coefficient from the power measuring end face 2 to the load end,
the S parameter of the straight-through is indicated.
In one embodiment, the calculating to obtain the output power of the power measuring end face 3 includes:
according to
Calculating to obtain the output power of the power measuring end face 3;
wherein, P3Representing the output power of the signal source at the power measuring end face 3 transmitted to the non-reflective load,
denotes the conversion power gain, Γ, from the power measuring end face 3 to the power measuring end face 1SRepresenting the reflection coefficient from the power measuring facet 3 to the signal source,
representing the S-parameter, Γ, of the power measuring end surface 3 to the power measuring end surface 1 when the source impedance adapter in a sheet-load traction system is in an initial stateaRepresenting the inverse of the power measuring end face 3 to the load endEjection coefficient, Γ'LThe reflection coefficient from the power measuring end face 1 to the load end is shown.
In one embodiment, the calculating to obtain the input power of the through-via comprises:
according to
The calculation obtains the input power of the through piece;
wherein, PinRepresenting the input power of said feed-through, Γ2Representing the reflection coefficient of the end face 1 looking towards the source end.
A second aspect of the embodiments of the present invention provides an apparatus for obtaining a power calibration model, including:
the acquisition module is used for acquiring S parameters and reflection coefficients of all components in the sheet load traction system;
the calibration module is used for calibrating the output power of a straight-through piece accessed to the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtaining the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece according to the S parameter and the reflection coefficient;
and the model building module is used for building a power calibration model according to different output powers of the signal source and the input power of the through piece so as to measure power by adopting the power calibration model.
A third aspect of an embodiment of the present invention provides a terminal device, including: a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the method of obtaining a power calibration model as described in any of the above embodiments when executing the computer program.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: calibrating the output power of a straight-through member accessed into the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtaining the output power of each power measurement end face of the straight-through member and the input power of the straight-through member according to the S parameter and the reflection coefficient; and constructing a power calibration model according to different output powers of the signal source and the input power of the through piece to measure the power by adopting the power calibration model, so that the output power can be calibrated before the output power is measured in a nonlinear state, the system measurement index and performance can be improved when the power device is measured, and the complexity of the measurement process is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart of an implementation of a method for obtaining a power calibration model according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an on-chip load traction system provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of the output power displayed by the microwave power meter during calibration and the reflection coefficients of different power measuring end surfaces provided by the embodiment of the invention;
FIG. 4 is a schematic diagram of an apparatus for obtaining a power calibration model according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a terminal device according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic flow chart of an implementation of the method for obtaining a power calibration model according to the embodiment of the present invention, which is described in detail below.
Optionally, as shown in fig. 2, the on-chip load traction system includes a signal source, a power amplifier, an isolator, a bias network, a dc power supply, an impedance tuner, a microwave probe, a probe station, an attenuator, a microwave power meter, and a microwave cable for connecting the components. The impedance tuner may include a source impedance tuner and a load impedance tuner, among others. The 2 microwave probes are respectively used for detecting two ends of a tested piece, an end face 1 and an end face 2 are formed on the tested piece, an end face 3 is formed between the isolator and the bias network, and an end face 4 is formed between the bias network and the attenuator.
The device comprises a signal source, a power amplifier, an impedance tuner, a direct current power supply, a bias network, an attenuator, a microwave power meter and a probe station, wherein the signal source and the power amplifier are used for providing an excitation signal, the impedance tuner is used for changing the input or output impedance state of a tested piece, the direct current power supply and the bias network are used for applying bias voltage to the tested power device, the attenuator and the microwave power meter are used for measuring the output power of the device, and the probe station and the microwave.
In radio frequency microwave circuit and system analysis, scattering parameters of components are generally used, the scattering parameters are S parameters, and measurement of the S parameters is generally realized by a Vector Network Analyzer (VNA), which may be referred to as Vector Network for short. The vector network adopts a calibration piece to perform characterization measurement on original hardware performance (such as directivity), connecting cables, probes and the like which form the vector network measurement capability, so as to improve the actual measurement performance, and the process is generally called self-calibration.
The S-parameters and reflection coefficients of the various components in the sheet load traction system obtained in this step can be obtained by:
calibrating S parameters from a power measuring end face 3 to a power measuring end face 1, S parameters from a power measuring end face 2 to a power measuring end face 4 and a reflection coefficient of a microwave power meter in a chip load traction system by adopting a vector network analyzer;
adopting a vector network analyzer to calibrate S parameters of the impedance tuner in different impedance states;
and acquiring the calibrated S parameter and the reflection coefficient.
Optionally, the obtained calibrated S-parameter may be stored for subsequent use when the sheet load traction system moves the power measuring end face.
By calibrating and measuring the S parameters of each component, error vector correction of output power measurement can be achieved.
Optionally, the pass-through component is connected between the power measurement end face 1 and the power measurement end face 2 in the on-chip load traction system, and based on different source powers of the signal source in the on-chip load traction system, the microwave power meter in the on-chip load traction system is adopted to calibrate the output power of the pass-through component at the power measurement end face 4, so as to obtain the output power displayed by the microwave power meter in the calibration process and the reflection coefficients of the different power measurement end faces; and then obtaining the output power of each power measuring end surface of the straight-through member and the input power of the straight-through member according to the S parameter, the output power and the reflection coefficients of the different power measuring end surfaces obtained in the step 101.
Optionally, as shown in fig. 3, obtaining the output power of each power measuring end surface of the feedthrough and the input power of the feedthrough according to the S parameter, the output power, and the reflection coefficients of the different power measuring end surfaces may include the following steps.
Optionally, in the power calibration process of step 102, the output power displayed by the microwave power meter, that is, the reading of the microwave power meter, is obtained.
Optionally, the power gain between the power measuring end face 2 and the power measuring end face 4 is calculated according to the S parameter between the power measuring end face 2 and the power measuring end face 4 when the load impedance tuner in the chip load traction system is in the initial state and the reflection coefficient of the power measuring end face 4; and then calculating to obtain the output power of the power measuring end face 2 according to the power gain between the power measuring end face 2 and the power measuring end face 4 and the output power displayed by the microwave power meter.
Optionally, according to
Calculating to obtain the output power of the power measuring end face 2; wherein, P2Represents the output power of the power measuring end face 2,
is representative of the output power of the power converter,
power gain, Γ, between the power measuring end surface 2 and the power measuring end surface 4PDenotes the reflection coefficient, s, of the power-measuring end face 4ij(s11、s12、s22、s21) S-parameters of the power measuring end surfaces 2 to 4 are shown when the load impedance adapter in the chip load traction system is in the initial state.
Optionally, according to
And calculating to obtain the reflection coefficient from the power measuring end face 2 to the load end.
Optionally, calculating to obtain a power gain of the straight-through member according to the S parameter of the straight-through member and the reflection coefficient from the power measurement end surface 2 to the load end; and calculating to obtain the output power of the power measuring end face 1 according to the power gain of the through piece and the output power of the power measuring end face 2.
Optionally, according to
Calculating to obtain the output power of the power measuring end face 1;
wherein, P1Denotes the output power, G, of the power measuring end face 1thruRepresenting the power gain, Γ, of the feedthroughLRepresenting the reflection coefficient from the power measuring end face 2 to the load end,
the S parameter of the straight-through is indicated.
And 304, calculating to obtain the output power of the power measuring end face 3 according to the S parameter from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 1 to the load end, the reflection coefficient from the power measuring end face 3 to the signal source end, the reflection coefficient from the power measuring end face 3 to the load end and the output power of the power measuring end face 1 when the source impedance tuner in the on-chip load traction system is in the initial state.
Optionally, the conversion power gain from the power measuring end face 3 to the power measuring end face 1 is obtained through calculation according to the S parameter from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 1 to the load end, the reflection coefficient from the power measuring end face 3 to the signal source end, and the reflection coefficient from the power measuring end face 3 to the load end when the source impedance tuner in the chip load traction system is in the initial state;
and calculating to obtain the output power of the power measuring end face 3 according to the conversion power gain from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 3 to the load end and the output power of the power measuring end face 1.
Wherein the reflection coefficient from the power measuring end face 3 to the load end can pass
And (6) calculating. Wherein the content of the first and second substances,
the conversion relation with the T parameter is obtained, and the specific conversion process is as follows: that is to say, the
And [ s ]ij]Conversion of three S parameters into a T matrix, e.g. of
Is converted into
[sij]、
The conversion formula is the same, and according to the transmission matrix characteristic, [ Tjl]＝[TC][TT][T]. According to the formula
Will be provided with
Is converted into
Optionally, according to
Calculating to obtain the output power of the power measuring end face 3;
wherein, P3Representing the output power of the signal source at the power measuring end face 3 transmitted to the non-reflective load,
denotes the conversion power gain, Γ, from the power measuring end face 3 to the power measuring end face 1SRepresenting the reflection coefficient from the power measuring facet 3 to the signal source,
representing the S-parameter, Γ, of the power measuring end surface 3 to the power measuring end surface 1 when the source impedance adapter in a sheet-load traction system is in an initial stateaDenotes the reflection coefficient, Γ ', from the power measuring end face 3 to the load end'LThe reflection coefficient from the power measuring end face 1 to the load end is shown.
Optionally, according to
The calculation obtains the input power of the through piece;
wherein, PinRepresenting the input power of said feed-through, Γ2Representing the reflection coefficient of the end face 1 looking towards the source end.
Optionally, after obtaining different output powers of the signal source and the input power of the pass-through, the different output powers of the signal source and the input power of the pass-through are combined to form a power calibration model.
According to the method for obtaining the power calibration model, the output power of the through piece connected to the on-chip load traction system is calibrated based on different source powers of a signal source in the on-chip load traction system, and the output power of each power measurement end face of the through piece and the input power of the through piece are obtained according to the S parameter and the reflection coefficient; and constructing a power calibration model according to the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece, so as to measure the power by adopting the power calibration model, thereby calibrating the output power before measuring the output power in a nonlinear state, improving the system measurement index and performance when measuring the power device, and reducing the complexity of the measurement process.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
Corresponding to the method for obtaining the power calibration model described in the above embodiments, fig. 4 shows an exemplary diagram of a device for power calibration at a chip load traction provided by an embodiment of the present invention. As shown in fig. 4, the apparatus may include: an acquisition module 401, a calibration module 402 and a model building module 403.
An obtaining module 401, configured to obtain S-parameters and reflection coefficients of each component in the sheet load traction system;
a calibration module 402, configured to calibrate output power of a pass-through connected to a chip load traction system based on different source powers of a signal source in the chip load traction system, and obtain output power of each power measurement end face of the pass-through and input power of the pass-through according to the S parameter and the reflection coefficient;
a model building module 403, configured to build a power calibration model according to the output power of each power measurement end face of the pass-through and the input power of the pass-through, so as to perform power measurement using the power calibration model.
Optionally, the obtaining module 401 may be configured to: calibrating S parameters from a power measuring end face 3 to a power measuring end face 1, S parameters from a power measuring end face 2 to a power measuring end face 4 and a reflection coefficient of a microwave power meter in a chip load traction system by adopting a vector network analyzer; adopting a vector network analyzer to calibrate S parameters of the impedance tuner in different impedance states; and acquiring the calibrated S parameter and the reflection coefficient.
Optionally, the through piece is connected between the power measuring end face 1 and the power measuring end face 2 in the plate load traction system; the calibration module 402 may calibrate the output power of the pass-through component at the power measurement end surface 4 by using a microwave power meter in the on-chip load traction system based on different source powers of the signal source in the on-chip load traction system, so as to obtain the output power displayed by the microwave power meter and reflection coefficients of different power measurement end surfaces in a calibration process;
and obtaining the output power of each power measuring end face of the straight-through piece and the input power of the straight-through piece according to the S parameter, the output power and the reflection coefficients of the different power measuring end faces.
Optionally, when the calibration module 402 obtains the output power of each power measurement end surface of the through member and the input power of the through member according to the S parameter, the output power, and the reflection coefficients of the different power measurement end surfaces, the calibration module 402 may be configured to calculate and obtain the output power of the power measurement end surface 2 according to the S parameter, the output power, and the reflection coefficient of the power measurement end surface 4 of the power measurement end surface 2 to the power measurement end surface 4 when the load impedance tuner in the sheet load traction system is in the initial state;
calculating and obtaining the reflection coefficients from the power measuring end surface 2 to the load end according to the S parameters from the power measuring end surface 2 to the power measuring end surface 4 and the reflection coefficients of the power measuring end surface 4 when the load impedance tuner in the chip load traction system is in the initial state;
calculating to obtain the output power of the power measuring end face 1 according to the S parameter of the straight-through piece, the reflection coefficient from the power measuring end face 2 to the load end and the output power of the power measuring end face 2;
calculating to obtain the output power of the power measuring end face 3 according to the S parameter from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 1 to the load end, the reflection coefficient from the power measuring end face 3 to the signal source end, the reflection coefficient from the power measuring end face 3 to the load end and the output power of the power measuring end face 1 when the source impedance tuner in the chip load traction system is in the initial state;
and calculating to obtain the input power of the through piece according to the S parameter from the power measuring end surface 3 to the power measuring end surface 1, the reflection coefficient from the power measuring end surface 3 to the signal source end and the output power of the power measuring end surface 3 when the source impedance tuner in the chip load traction system is in the initial state.
Optionally, when the calibration module 402 calculates and obtains the output power of the power measurement end face 2, it may be configured to:
according to
Calculating to obtain the output power of the power measuring end face 2;
wherein, P2Represents the output power of the power measuring end face 2,
is representative of the output power of the power converter,
power measurementMeasuring the power gain, Γ, between the end face 2 and the power measuring end face 4PDenotes the reflection coefficient, s, of the power-measuring end face 4ijS-parameters of the power measuring end surfaces 2 to 4 are shown when the load impedance adapter in the chip load traction system is in the initial state.
Optionally, when the calibration module 402 calculates and obtains the output power of the power measurement end face 1, it may be configured to:
according to
Calculating to obtain the output power of the power measuring end face 1;
wherein, P1Denotes the output power, G, of the power measuring end face 1thruRepresenting the power gain, Γ, of the feedthroughLRepresenting the reflection coefficient from the power measuring end face 2 to the load end,
the S parameter of the straight-through is indicated.
Optionally, when the calibration module 402 calculates and obtains the output power of the power measurement end face 3, it may be configured to:
according to
Calculating to obtain the output power of the power measuring end face 3;
wherein, P3Representing the output power of the signal source at the power measuring end face 3 transmitted to the non-reflective load,
denotes the conversion power gain, Γ, from the power measuring end face 3 to the power measuring end face 1SRepresenting the reflection coefficient from the power measuring facet 3 to the signal source,
representing the S-parameter, Γ, of the power measuring end surface 3 to the power measuring end surface 1 when the source impedance adapter in a sheet-load traction system is in an initial stateaTo representReflection coefficient, Γ ', from power measuring end face 3 to load end'LThe reflection coefficient from the power measuring end face 1 to the load end is shown.
Optionally, when the calibration module 402 obtains the input power of the pass-through, the calculation may be used to:
according to
The calculation obtains the input power of the through piece;
wherein, PinRepresenting the input power of said feed-through, Γ2Representing the reflection coefficient of the end face 1 looking towards the source end.
According to the device for calibrating the power of the on-chip load traction, the calibration module calibrates the output power of the through piece accessed to the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtains the output power of each power measurement end face of the through piece and the input power of the through piece according to the S parameter and the reflection coefficient; the model building module builds a power calibration model according to the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece, so that the power calibration model is adopted to carry out power measurement, the output power can be calibrated before the output power measurement is carried out in a nonlinear state, the system measurement index and performance when the power device is measured can be improved, and the complexity of the measurement process is reduced.
Fig. 5 is a schematic diagram of a terminal device according to an embodiment of the present invention. As shown in fig. 5, the terminal device 500 of this embodiment includes: a processor 501, a memory 502 and a computer program 503 stored in said memory 502 and executable on said processor 501, such as a program for power calibration at chip load traction. The processor 501 executes the computer program 503 to implement the steps in the above-mentioned method embodiment of power calibration for chip load traction, such as steps 101 to 103 shown in fig. 1, or steps 301 to 305 shown in fig. 3, and the processor 501 executes the computer program 503 to implement the functions of the modules in the above-mentioned device embodiments, such as the functions of the modules 401 to 403 shown in fig. 4.
Illustratively, the computer program 503 may be partitioned into one or more program modules that are stored in the memory 502 and executed by the processor 501 to implement the present invention. The one or more program modules may be a series of computer program instruction segments capable of performing specific functions for describing the execution of the computer program 503 in the apparatus for power calibration at on-chip load traction or the terminal device 500. For example, the computer program 503 may be divided into an obtaining module 401, a calibration module 402, and a model building module 403, and specific functions of the modules are shown in fig. 4, which is not described in detail herein.
The terminal device 500 may be a desktop computer, a notebook, a palm computer, a cloud server, or other computing devices. The terminal device may include, but is not limited to, a processor 501, a memory 502. Those skilled in the art will appreciate that fig. 5 is merely an example of a terminal device 500 and is not intended to limit the terminal device 500 and may include more or fewer components than those shown, or some components may be combined, or different components, for example, the terminal device may also include input output devices, network access devices, buses, etc.
The Processor 501 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 502 may be an internal storage unit of the terminal device 500, such as a hard disk or a memory of the terminal device 500. The memory 502 may also be an external storage device of the terminal device 500, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like, which are provided on the terminal device 500. Further, the memory 502 may also include both an internal storage unit and an external storage device of the terminal device 500. The memory 502 is used for storing the computer programs and other programs and data required by the terminal device 500. The memory 502 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow of the method according to the embodiments of the present invention may also be implemented by a computer program, which may be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method embodiments may be implemented. . Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A method of obtaining a power calibration model, comprising:
obtaining S parameters and reflection coefficients of each component in the sheet load traction system;
calibrating the output power of a straight-through member accessed into the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtaining the output power of each power measurement end face of the straight-through member and the input power of the straight-through member according to the S parameter and the reflection coefficient;
and constructing a power calibration model according to the output power of each power measurement end surface of the straight-through piece and the input power of the straight-through piece, so as to measure the power by adopting the power calibration model.
2. The method of deriving a power calibration model according to claim 1, wherein said deriving S-parameters and reflection coefficients for each component in a sheet load traction system comprises:
calibrating S parameters from a power measuring end face 3 to a power measuring end face 1, S parameters from a power measuring end face 2 to a power measuring end face 4 and a reflection coefficient of a microwave power meter in a chip load traction system by adopting a vector network analyzer;
adopting a vector network analyzer to calibrate S parameters of the impedance tuner in different impedance states;
and acquiring the calibrated S parameter and the reflection coefficient.
3. The method of obtaining a power calibration model according to claim 2, wherein the feedthrough is connected between a power measuring end face 1 and a power measuring end face 2 in the on-chip load traction system;
the obtaining of the output power of each power measurement end surface of the feedthrough and the input power of the feedthrough includes:
based on different source powers of the signal source in the on-chip load traction system, a microwave power meter in the on-chip load traction system is adopted to calibrate the output power of the through piece at the power measurement end face 4, so that the output power displayed by the microwave power meter in the calibration process and the reflection coefficients of different power measurement end faces are obtained;
and obtaining the output power of each power measuring end face of the straight-through piece and the input power of the straight-through piece according to the S parameter, the output power and the reflection coefficients of the different power measuring end faces.
4. The method of deriving a power calibration model according to claim 3, wherein said deriving the output power of each power measuring facet of the feedthrough and the input power of the feedthrough from the S-parameter, the output power, and the reflection coefficients of the different power measuring facets comprises:
calculating to obtain the output power of the power measuring end face 2 according to the S parameter from the power measuring end face 2 to the power measuring end face 4 when the load impedance tuner in the chip load traction system is in the initial state, the output power and the reflection coefficient of the power measuring end face 4;
calculating and obtaining the reflection coefficients from the power measuring end surface 2 to the load end according to the S parameters from the power measuring end surface 2 to the power measuring end surface 4 and the reflection coefficients of the power measuring end surface 4 when the load impedance tuner in the chip load traction system is in the initial state;
calculating to obtain the output power of the power measuring end face 1 according to the S parameter of the straight-through piece, the reflection coefficient from the power measuring end face 2 to the load end and the output power of the power measuring end face 2;
calculating to obtain the output power of the power measuring end face 3 according to the S parameter from the power measuring end face 3 to the power measuring end face 1, the reflection coefficient from the power measuring end face 1 to the load end, the reflection coefficient from the power measuring end face 3 to the signal source end, the reflection coefficient from the power measuring end face 3 to the load end and the output power of the power measuring end face 1 when the source impedance tuner in the chip load traction system is in the initial state;
and calculating to obtain the input power of the through piece according to the S parameter from the power measuring end surface 3 to the power measuring end surface 1, the reflection coefficient from the power measuring end surface 3 to the signal source end and the output power of the power measuring end surface 3 when the source impedance tuner in the chip load traction system is in the initial state.
5. The method of obtaining a power calibration model according to claim 4, wherein said calculating to obtain the output power of the power measuring end face 2 comprises:
according to
Calculating to obtain the output power of the power measuring end face 2;
wherein, P2Represents the output power of the power measuring end face 2,
is representative of the output power of the power converter,
denotes the power gain, Γ, between the power measuring end face 2 and the power measuring end face 4PDenotes the reflection coefficient, s, of the power-measuring end face 4ijS-parameters of the power measuring end surfaces 2 to 4 are shown when the load impedance adapter in the chip load traction system is in the initial state.
6. The method of obtaining a power calibration model according to claim 4, wherein said calculating to obtain the output power of the power measuring end face 1 comprises:
according to
Calculating to obtain the output power of the power measuring end face 1;
wherein, P1Denotes the output power, G, of the power measuring end face 1thruRepresenting the power gain, Γ, of the feedthroughLRepresenting the reflection coefficient from the power measuring end face 2 to the load end,
the S parameter of the straight-through is indicated.
7. The method of obtaining a power calibration model according to claim 4, wherein said calculating to obtain the output power of the power measuring end face 3 comprises:
according to
Is calculated to obtainObtaining the output power of the power measuring end face 3;
wherein, P3Representing the output power of the signal source at the power measuring end face 3 transmitted to the non-reflective load,
denotes the conversion power gain, Γ, from the power measuring end face 3 to the power measuring end face 1SRepresenting the reflection coefficient from the power measuring facet 3 to the signal source,
representing the S-parameter, Γ, of the power measuring end surface 3 to the power measuring end surface 1 when the source impedance adapter in a sheet-load traction system is in an initial stateaDenotes the reflection coefficient, Γ ', from the power measuring end face 3 to the load end'LThe reflection coefficient from the power measuring end face 1 to the load end is shown.
8. The method of deriving a power calibration model according to claim 4, wherein said calculating to obtain the input power of said pass-through comprises:
according to
The calculation obtains the input power of the through piece;
wherein, PinRepresenting the input power of said feed-through, Γ2Representing the reflection coefficient of the end face 1 looking towards the source end.
9. An apparatus for obtaining a power calibration model, comprising:
the acquisition module is used for acquiring S parameters and reflection coefficients of all components in the sheet load traction system;
the calibration module is used for calibrating the output power of a straight-through piece accessed to the on-chip load traction system based on different source powers of a signal source in the on-chip load traction system, and obtaining the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece according to the S parameter and the reflection coefficient;
and the model building module is used for building a power calibration model according to the output power of each power measurement end face of the straight-through piece and the input power of the straight-through piece so as to measure the power by adopting the power calibration model.
10. A terminal device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any of claims 1 to 8 when executing the computer program.
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