CN113324662A - Uncooled infrared detector and preparation method thereof - Google Patents
Uncooled infrared detector and preparation method thereof Download PDFInfo
- Publication number
- CN113324662A CN113324662A CN202110537411.4A CN202110537411A CN113324662A CN 113324662 A CN113324662 A CN 113324662A CN 202110537411 A CN202110537411 A CN 202110537411A CN 113324662 A CN113324662 A CN 113324662A
- Authority
- CN
- China
- Prior art keywords
- layer
- infrared detector
- uncooled infrared
- tin selenide
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 15
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000002135 nanosheet Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000010521 absorption reaction Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000009413 insulation Methods 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 34
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 23
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 239000004642 Polyimide Substances 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QUEDYRXQWSDKKG-UHFFFAOYSA-M [O-2].[O-2].[V+5].[OH-] Chemical compound [O-2].[O-2].[V+5].[OH-] QUEDYRXQWSDKKG-UHFFFAOYSA-M 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 5
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000058 selane Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000011669 selenium Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000005057 refrigeration Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention provides an uncooled infrared detector which comprises a supporting substrate, a heat insulation layer, a thermal resistor layer, an insulation layer and an absorption layer which are sequentially arranged from bottom to top. The preparation method of the uncooled infrared detector comprises the following steps: providing a support substrate, and sequentially preparing and forming a heat insulation layer, a thermal resistor layer and an insulation layer on the support substrate; growing a vertical tin selenide nanosheet on the insulating layer through a molecular beam epitaxial growth process to form the absorption layer; and preparing and forming a first electrode and a second electrode which are connected with the thermistor layer to obtain the uncooled infrared detector. According to the uncooled infrared detector provided by the invention, the tin selenide nanosheet growing in the vertical shape is used as the absorption layer, so that the range of an infrared absorption waveband can be enlarged, the infrared radiation energy absorbed by the uncooled infrared detector can be improved, and the sensitivity of converting temperature change into voltage (or current) change is further improved.
Description
Technical Field
The invention belongs to the technical field of infrared detectors, and particularly relates to an uncooled infrared detector and a preparation method thereof.
Background
Thermal infrared imagers, also known as infrared imaging systems or infrared detection systems, are high-tech products used to detect infrared radiation of a target object and convert a temperature distribution image of the target object into a video image. The core component in the thermal infrared imager is an infrared detector, and the infrared detector can be divided into a non-refrigeration type detector and a refrigeration type detector according to the working temperature of the chip. The refrigeration type is generally a photodetector manufactured using a narrow bandgap semiconductor, and requires cooling using liquid nitrogen or the like to suppress hot carriers and noise during operation, and therefore, is relatively large in volume and weight and relatively expensive. The non-refrigeration type infrared detector is also called as a room temperature detector, has lower NETD (noise equivalent temperature difference) index, can work under the room temperature condition without refrigeration, and has the advantages of easy portability and the like.
The uncooled infrared detector is generally a thermal detector, and utilizes the specific thermal effect of infrared radiation to convert the infrared radiation into heat and then passes through a sensitive elementThe detector for converting heat into electric signals by materials, in particular to a detector for converting heat into electric signals, wherein infrared rays firstly enter a detection element to cause the temperature change of a sensitive element, thereby causing the change of a certain physical quantity of the sensitive element and finally causing the change of the electric signals. At present, Vanadium Oxide (VO) is mainly used for non-refrigeration type detectorsx) Amorphous silicon (alpha-Si) is used as a heat-sensitive material, the amorphous silicon is easier to realize large-scale production compared with vanadium oxide, and performance indexes (such as temperature measurement precision, sensitivity and the like) of the vanadium oxide are obviously superior to those of the amorphous silicon.
The non-refrigeration infrared detector technology taking vanadium oxide as a sensitive unit is widely applied to a plurality of fields. However, vanadium oxide has poor light absorption performance, a narrow infrared absorption band, and a limited range of detectable infrared wavelengths. Therefore, how to increase the infrared absorption band range of the uncooled infrared detector is a problem to be solved.
Disclosure of Invention
In view of the defects in the prior art, the invention provides an uncooled infrared detector and a preparation method thereof, and aims to solve the problem that the infrared absorption waveband of the uncooled infrared detector is narrow.
In order to solve the problems, the invention adopts the following technical scheme:
an uncooled infrared detector comprises a supporting substrate, a heat insulation layer, a thermistor layer, an insulation layer and an absorption layer which are sequentially arranged from bottom to top, and further comprises a first electrode and a second electrode which are connected with the thermistor layer;
wherein the absorption layer is a tin selenide nanosheet vertically grown on the insulating layer.
Preferably, the height of the tin selenide nanosheets is 1 μm to 2 μm.
Preferably, in the tin selenide nanosheet, the atomic ratio of Sn to Se is 1: 1.6 to 2.2.
Preferably, a reflecting layer is further disposed between the supporting substrate and the thermal insulation layer, and the reflecting layer is a metal aluminum layer.
Preferably, the thermal insulation layer includes a first silicon nitride layer, a polyimide layer, and a second silicon nitride layer sequentially disposed on the reflective layer.
Preferably, the thermistor layer is a vanadium oxide layer having a thickness of 100nm to 150 nm.
Preferably, the insulating layer is a silicon nitride layer having a thickness of 50nm to 100 nm.
The invention also provides a preparation method of the uncooled infrared detector, which comprises the following steps:
providing a support substrate, and sequentially preparing and forming a heat insulation layer, a thermal resistor layer and an insulation layer on the support substrate;
growing a vertical tin selenide nanosheet on the insulating layer through a molecular beam epitaxial growth process to form the absorption layer;
preparing a first electrode and a second electrode which are connected with the thermistor layer to obtain the uncooled infrared detector;
wherein, in the molecular beam epitaxial growth process, the temperature of the supporting substrate is controlled to be 150-250 ℃.
Specifically, the method further comprises a step of performing a thermal annealing process after the tin selenide nanosheet is grown, wherein the step of performing the thermal annealing process comprises the following steps: placing the support substrate of the grown tin selenide nanosheet in H2Se and N2Heating to 200-280 ℃, then preserving the heat for 30-60 min, and then cooling to room temperature; or, the supporting substrate of the grown tin selenide nanosheet is placed in H2S and N2Heating to 200-280 ℃, keeping the temperature for 30-60 min, and then cooling to room temperature.
Specifically, the thermistor layer is a vanadium oxide layer, and the step of preparing and forming the vanadium oxide layer on the heat insulation insulating layer includes:
sputtering on the heat insulation layer in magnetron sputtering equipment to form a vanadium trioxide thin film layer;
and introducing oxygen or mixed gas of oxygen and argon into the magnetron sputtering equipment, heating to oxidize vanadium trioxide into vanadium dioxide, and preparing to obtain the vanadium oxide thermistor layer.
According to the uncooled infrared detector provided by the embodiment of the invention, the tin selenide nanosheet growing in the vertical shape is used as the absorption layer, and the specific light trapping effect of the tin selenide nanosheet with the structure is utilized to expand the range of an infrared absorption wave band, so that the infrared radiation energy absorbed by the uncooled infrared detector can be improved, the capture rate of the energy is improved, and the sensitivity of converting temperature change into voltage (or current) change is further improved.
Drawings
FIG. 1 is a schematic diagram of an uncooled infrared detector in an embodiment of the invention;
fig. 2 is an SEM image of tin selenide nanoplatelets in an embodiment of the invention;
FIG. 3 is a process flow diagram of a method of making an uncooled infrared detector in an embodiment of the invention;
FIG. 4 is a graph showing the absorption rate of the absorption layer of the tin selenide nanosheet in this embodiment in the infrared band;
fig. 5 is a graph showing the reflection intensity of the uncooled infrared detector in the infrared band in the present embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
The embodiment of the invention firstly provides an uncooled infrared detector, and referring to fig. 1, the uncooled infrared detector comprises a supporting substrate 1, a heat insulation layer 2, a thermistor layer 3, an insulation layer 4 and an absorption layer 5 which are sequentially arranged from bottom to top, and further comprises a first electrode 6 and a second electrode 7 which are connected with the thermistor layer 3.
Wherein, the support substrate 1 may be selected to be a silicon substrate, for example. In a preferred embodiment, as shown in fig. 1, a reflective layer 8 is further disposed between the supporting substrate 1 and the insulating and insulating layer 2, and the reflective layer 8 is mainly used for reflecting infrared light that has passed through the absorbing layer 5, the insulating layer 4, the thermistor layer 3, and the insulating and insulating layer 2 above to the absorbing layer 5, so as to improve absorption efficiency of the detector for infrared light. In a most preferred embodiment, the reflective layer 8 is a metal aluminum layer, and the thickness thereof may be set to 20nm to 200 nm.
The thermal insulation layer 2 is mainly used for preventing electric signals and heat of the thermistor layer 3 from being conducted to the support substrate 1 to cause electric signal loss and heat loss, and therefore the thermal insulation layer 2 has electrical insulation and thermal insulation properties.
In a preferred embodiment, as shown in fig. 1, the thermal insulation layer 2 includes a first silicon nitride layer 21, a polyimide layer 22, and a second silicon nitride layer 23 sequentially disposed on the reflective layer 8. The first silicon nitride layer 21 and the second silicon nitride layer 23 mainly serve as electrical insulation, and the polyimide layer 22 mainly serves as thermal insulation. Further, the second silicon nitride layer 23 formed on the polyimide layer 22 serves as an electrical insulation layer, and also serves as a buffer layer for forming the thermistor layer 3 in a subsequent process. In other embodiments, the first silicon nitride layer 21 and the second silicon nitride layer 23 may be replaced with silicon oxide layers, respectively.
Further, the thickness of the first silicon nitride layer 21 and the second silicon nitride layer 23 may be set in the range of 100nm to 150nm, and the thickness of the polyimide layer 22 may be set in the range of 2 μm to 3 μm.
In the embodiment of the present invention, the thermistor layer 3 is a vanadium oxide layer with a thickness of 100nm to 150nm, and the material thereof is specifically vanadium dioxide (VO)2)。
The insulating layer 4 is mainly used to prevent the electric signal of the thermistor layer 3 from being conducted to the absorbing layer 5 to cause the loss of the electric signal, and at the same time, the insulating layer 4 needs to have good heat conduction performance so that the heat of the absorbing layer 5 can be conducted to the thermistor layer 3. In a preferred embodiment, the insulating layer 4 is a silicon nitride layer having a thickness of 50nm to 150 nm.
In the embodiment of the present invention, the absorption layer 5 is a tin selenide nanosheet vertically grown on the insulating layer 4. As shown in fig. 2, the tin selenide nanosheets are grown upright on the substrate and are in an ordered structure. By utilizing the unique light trapping effect of the tin selenide nanosheet with the structure, the range of an infrared absorption wave band is enlarged, so that the infrared radiation energy absorbed by the uncooled infrared detector can be improved, the capture rate of the energy is improved, and the sensitivity of converting temperature change into voltage (or current) change is improved.
In a preferred scheme, the height of the tin selenide nanosheet is 1-2 μm. Further, in the tin selenide nanosheet, the atomic ratio of Sn to Se is 1: 1.6-2.2, and the most preferable atomic ratio of Sn to Se is 1: 1.75.
wherein, the first electrode 6 and the second electrode 7 are both metal electrodes. In a preferred embodiment, as shown in fig. 1, the first electrode 6 and the second electrode 7 are both connected to the upper surface of the thermistor layer 3 and are located on opposite sides of the absorption layer 5.
The embodiment of the present invention further provides a method for manufacturing the uncooled infrared detector, which is described above with reference to fig. 3 and fig. 1, and the method includes the steps of:
step S10, providing a supporting substrate 1, and sequentially preparing and forming a thermal insulation layer 2, a thermal resistor layer 3 and an insulating layer 4 on the supporting substrate 1.
In a preferred embodiment, as shown in fig. 1, a reflective layer 8 is further disposed between the supporting substrate 1 and the insulating and insulating thermal layer 2, so that the reflective layer 8 is first formed on the supporting substrate 1, and then the insulating and insulating thermal layer 2 is formed on the reflective layer 8. Taking the reflecting layer 8 as a metal aluminum layer as an example, the metal aluminum layer may be formed on the supporting substrate 1 by a magnetron sputtering process.
In a preferred embodiment, as shown in fig. 1, the thermal insulation layer 2 includes a first silicon nitride layer 21, a polyimide layer 22 and a second silicon nitride layer 23 sequentially disposed on the reflective layer 8, and the preparation process includes:
preparation of the first silicon nitride layer 21: and a first silicon nitride layer 21 with the thickness of 100 nm-150 nm is formed on the reflecting layer 8 by evaporation through a magnetron sputtering process.
Preparation of polyimide layer 22: coating polyamic acid with a thickness of about 50 μm on the first silicon nitride layer 21 by a coater; then transferring the substrate together with the polyamic acid solution coated on the substrate to a horizontal drying flow platform, drying for 1h at the temperature of 30 ℃, and continuously drying for 2h at the temperature of 60 ℃; then, the sample is transferred to a vacuum drying oven, vacuum pumping is carried out, then under the protection of helium atmosphere, the sample is respectively kept for 1h under the temperature conditions of 80 ℃, 120 ℃, 150 ℃, 200 ℃, 250 ℃ and 300 ℃ in sequence, and then is kept for 30min under the temperature conditions of 330 ℃, 350 ℃ and 370 ℃ in sequence, and thermal imidization reaction is carried out, so that the polyimide layer 22 with the thickness of 2-3 mu m is prepared.
Preparation of the second silicon nitride layer 23: and a second silicon nitride layer 23 with the thickness of 100 nm-150 nm is formed on the polyimide layer 22 through evaporation by a magnetron sputtering process.
In a preferred embodiment, the thermal resistor layer 3 is a vanadium oxide layer with a thickness of 100nm to 150nm, and the preparation process thereof includes:
forming vanadium trioxide (V) on the heat insulation layer 2 in a magnetron sputtering device in a sputtering way2O3) A thin film layer;
introducing oxygen or mixed gas of oxygen and argon (preferably mixed gas with the volume ratio of argon to oxygen being 1.3: 40) into the magnetron sputtering equipment, and heating to oxidize vanadium trioxide into vanadium dioxide (VO)2) And preparing the vanadium oxide thermistor layer.
Preparation of the insulating layer 4: and forming a silicon nitride layer with the thickness of 50 nm-150 nm on the thermal resistor layer 3 by evaporation through a magnetron sputtering process to obtain the insulating layer 4.
Step S20, growing a vertical tin selenide nanosheet on the insulating layer 4 by a molecular beam epitaxial growth process to form the absorption layer 5.
Specifically, a sample is placed in a molecular beam epitaxy apparatus (MBE), a high-purity selenium material source and a high-purity tin material source, preferably having a purity of 99.99%, are added to the molecular beam epitaxy apparatus (MBE), the selenium material source and the tin material source and a support substrate are heated by the molecular beam epitaxy apparatus, respectively, and are sprayed onto the insulating layer 4 in the form of molecular beams or atomic beams, respectively, thereby preparing and obtaining a vertically-grown tin selenide nanosheet, and forming the absorption layer 5.
In step S20, the temperature of the support substrate 1 is controlled to 150 to 250 ℃, the temperature of the selenium source is controlled to 200 to 260 ℃, and the temperature of the tin source is controlled to 1100 to 1300 ℃. The growth time of the tin selenide nano-sheet is 20 min-40 min, and the height of the tin selenide nano-sheet is 1 mu m-2 mu m.
In a preferred embodiment, the method further comprises a step of performing a thermal annealing process after the tin selenide nanosheet is grown, and the thermal annealing process may be performed by one of the following two processes:
the first process is to place the support substrate of the grown tin selenide nanosheet in 2-5% H2Se and 95-98% of N2Heating to 200-280 ℃ in a mixed atmosphere environment, preserving the heat for 30-60 min, and then cooling to room temperature.
Secondly, placing the support substrate of the grown tin selenide nanosheet in 2% -5% H2S and 95% -98% N2Heating to 200-280 ℃, keeping the temperature for 30-60 min, and then cooling to room temperature.
By carrying out the thermal annealing process, Se vacancy and defects in the tin selenide nanosheets can be adjusted, and the absorption efficiency of the tin selenide nanosheets on infrared bands and the absorption band range of the tin selenide nanosheets are improved.
And step S30, preparing and forming a first electrode 6 and a second electrode 7 connected with the thermal resistor layer 3 to obtain the uncooled infrared detector.
In a preferred embodiment, the first electrode 6 and the second electrode 7 are both metal electrodes, and the preparation process may be a magnetron sputtering process.
Example 1
The embodiment provides an uncooled infrared detector and a preparation method thereof.
Referring to fig. 1, the uncooled infrared detector includes a supporting substrate 1, a reflective layer 8, a heat insulating layer 2, a thermal resistor layer 3, an insulating layer 4, and an absorption layer 5, which are sequentially disposed from bottom to top, and further includes a first electrode 6 and a second electrode 7 connected to the thermal resistor layer 3.
Wherein, the supporting substrate 1 is the silicon substrate, the reflection stratum 8 is the aluminium metal layer that thickness is 20nm, thermal-insulated insulating layer 2 includes the thick polyimide layer 22 of the thick first silicon nitride layer 21 of 100nm, 2 μm and the thick second silicon nitride layer 23 of 100nm, thermistor layer 3 is the thick vanadium oxide layer of 150nm, insulating layer 4 is the silicon nitride layer that thickness is 50nm, absorbing layer 5 is the upright form and grows highly being 2 μm tin selenide nanosheets on insulating layer 4, first electrode 6 and second electrode 7 are metal electrode.
The preparation method of the uncooled infrared detector comprises the following steps:
(1) an aluminum metal layer 8 is formed on the silicon substrate 1. Specifically, the aluminum metal layer 8 formed to a thickness of 20nm was prepared by a magnetron sputtering process.
(2) The first silicon nitride layer 21, the polyimide layer 22 and the second silicon nitride layer 23 are sequentially formed on the aluminum metal layer 8. Specifically, a first silicon nitride layer 21 with a thickness of 100nm is first formed on the reflective layer 8 by evaporation through a magnetron sputtering process; then, applying a coating process and combining a thermal imidization reaction to prepare and form a polyimide layer 22 with a thickness of 2 μm on the first silicon nitride layer 21; then, a second silicon nitride layer 23 with a thickness of 100nm is formed on the polyimide layer 22 by evaporation through a magnetron sputtering process.
(3) And preparing and forming a vanadium oxide thermal resistance layer 3 on the second silicon nitride layer 23. Specifically, first, three layers are formed on the heat insulating layer 2 by sputtering in a magnetron sputtering apparatusVanadium oxide (V)2O3) And then introducing oxygen into the magnetron sputtering equipment, and heating to oxidize vanadium trioxide into vanadium dioxide (VO)2) And preparing the vanadium oxide thermistor layer with the thickness of 150 nm.
(4) And preparing and forming the insulating layer 4 on the vanadium oxide thermistor layer 3. Specifically, a silicon nitride layer with a thickness of 50nm is formed on the thermistor layer 3 by evaporation through a magnetron sputtering process.
(5) And preparing a vertically grown tin selenide nanosheet on the insulating layer 4 to form the absorption layer 5. Specifically, in a Molecular Beam Epitaxy (MBE) apparatus, a vertically grown tin selenide nanosheet is prepared by controlling process conditions such as the temperature of the support substrate, the temperature of the selenium source and the tin source, and the growth time. In this embodiment, the height of the tin selenide nanosheet is 2 μm, and the atomic ratio of Sn to Se is controlled to be 1: 1.75.
in this embodiment, after the formation of the vertically grown tin selenide nanosheets is prepared, a thermal annealing process is also performed: placing the support substrate of the grown tin selenide nanosheet in 2% H2Se and 98% N2Heating to 250 ℃ in a mixed atmosphere environment, preserving heat for 60min, and then cooling to room temperature. By carrying out the thermal annealing process, Se vacancy and defects in the tin selenide nanosheets can be adjusted, and the absorption efficiency of the tin selenide nanosheets on infrared bands and the absorption band range of the tin selenide nanosheets are improved.
As shown in fig. 2, which is an SEM image of the tin selenide nanosheets in this example, the tin selenide nanosheets are grown upright on the substrate and are in an ordered structure as shown in fig. 2. The specific light trapping effect of the tin selenide nanosheet with the structure is utilized, and the range of infrared absorption wave bands is enlarged.
(6) And respectively preparing and forming a first electrode 6 and a second electrode 7 on the vanadium oxide thermistor layer 3 and on two opposite sides of the absorption layer 5, thereby preparing and obtaining the uncooled infrared detector.
Fig. 4 is a graph of the absorption rate of the absorption layer of the tin selenide nanosheet prepared in this example in the infrared band. Fig. 5 is a graph showing the reflection intensity of the uncooled infrared detector in the present embodiment in the infrared band, in which a curve L1 is a reflection intensity curve obtained by the test after the aluminum metal layer 8 is prepared in the above step (1), and a curve L2 is a reflection intensity curve obtained by the test after the entire device is prepared in the above step (6).
As can be seen from fig. 4 and 5, the absorption layer of tin selenide nanosheets grown in an upright position in the present invention has a large range of infrared absorption band and a high absorption rate.
In summary, in the uncooled infrared detector provided in the embodiment of the present invention, the tin selenide nanosheet growing in the vertical shape is used as the absorption layer, and the specific light trapping effect of the tin selenide nanosheet with the structure is utilized to expand the range of the infrared absorption band, so that the infrared radiation energy absorbed by the uncooled infrared detector can be improved, the capture rate of the energy is improved, and the sensitivity of converting the temperature change into the voltage (or current) change is further improved.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
1. An uncooled infrared detector is characterized by comprising a supporting substrate, a heat insulation layer, a thermistor layer, an insulation layer and an absorption layer which are sequentially arranged from bottom to top, and a first electrode and a second electrode which are connected with the thermistor layer;
wherein the absorption layer is a tin selenide nanosheet vertically grown on the insulating layer.
2. The uncooled infrared detector of claim 1, wherein the tin selenide nanosheets are 1 to 2 μm in height.
3. The uncooled infrared detector of claim 2, wherein the atomic ratio of Sn to Se in the tin selenide nanosheets is 1: 1.6 to 2.2.
4. The uncooled infrared detector of claim 1, wherein a reflective layer is further disposed between the support substrate and the insulating layer, and the reflective layer is a metal aluminum layer.
5. The uncooled infrared detector of claim 4, wherein the thermal insulation layer includes a first silicon nitride layer, a polyimide layer and a second silicon nitride layer sequentially disposed on the reflective layer.
6. The uncooled infrared detector of claim 1, wherein the thermistor layer is a vanadium oxide layer with a thickness of 100nm to 150 nm.
7. The uncooled infrared detector of claim 1, wherein the insulating layer is a silicon nitride layer having a thickness of 50nm to 100 nm.
8. A method for preparing an uncooled infrared detector as set forth in any one of claims 1 to 7, comprising:
providing a support substrate, and sequentially preparing and forming a heat insulation layer, a thermal resistor layer and an insulation layer on the support substrate;
growing a vertical tin selenide nanosheet on the insulating layer through a molecular beam epitaxial growth process to form the absorption layer;
preparing a first electrode and a second electrode which are connected with the thermistor layer to obtain the uncooled infrared detector;
wherein, in the molecular beam epitaxial growth process, the temperature of the supporting substrate is controlled to be 150-250 ℃.
9. The method for preparing an uncooled infrared detector as claimed in claim 8, further comprising a step of performing a thermal annealing process after the tin selenide nanosheets are grown, comprising:
placing the support substrate of the grown tin selenide nanosheet in H2Se and N2Heating to 200-280 ℃, then preserving the heat for 30-60 min, and then cooling to room temperature; in the alternative, the first and second sets of the first and second sets of the first and second sets of the first and second sets of the first and second sets of the first and second sets of the second,
placing the support substrate of the grown tin selenide nanosheet in H2S and N2Heating to 200-280 ℃, keeping the temperature for 30-60 min, and then cooling to room temperature.
10. The method for preparing an uncooled infrared detector according to claim 9, wherein the thermistor layer is a vanadium oxide layer, and the step of preparing the vanadium oxide layer on the heat insulation layer comprises:
sputtering on the heat insulation layer in magnetron sputtering equipment to form a vanadium trioxide thin film layer;
and introducing oxygen or mixed gas of oxygen and argon into the magnetron sputtering equipment, heating to oxidize vanadium trioxide into vanadium dioxide, and preparing to obtain the vanadium oxide thermistor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110537411.4A CN113324662A (en) | 2021-05-17 | 2021-05-17 | Uncooled infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110537411.4A CN113324662A (en) | 2021-05-17 | 2021-05-17 | Uncooled infrared detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113324662A true CN113324662A (en) | 2021-08-31 |
Family
ID=77415828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110537411.4A Pending CN113324662A (en) | 2021-05-17 | 2021-05-17 | Uncooled infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113324662A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300571A (en) * | 2021-10-22 | 2022-04-08 | 中国石油大学(华东) | Flexible single crystal thin film photoelectric detector and preparation method thereof |
| CN114485949A (en) * | 2022-01-27 | 2022-05-13 | 鸿海精密工业股份有限公司 | Microbolometer and method for manufacturing the same |
| WO2024087338A1 (en) * | 2022-10-25 | 2024-05-02 | 深圳先进技术研究院 | Thermosensitive thin film, infrared detector, and manufacturing method for infrared detector |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060784A1 (en) * | 2004-09-17 | 2006-03-23 | Korea Institute Of Science And Technology | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure |
| WO2010033142A1 (en) * | 2008-05-30 | 2010-03-25 | Regents Of The University Of Minnesota | Detection beyond the standard radiation noise limit using spectrally selective absorption |
| CN101776484A (en) * | 2010-01-07 | 2010-07-14 | 中国电子科技集团公司第十三研究所 | Bolometer and manufacturing method thereof |
| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
| CN104692343A (en) * | 2015-03-17 | 2015-06-10 | 福州大学 | Tin selenide nano material, preparation method and application thereof |
| CN105399061A (en) * | 2015-11-18 | 2016-03-16 | 山东师范大学 | Preparation method for one-dimensional SnSe monocrystal nanowire |
| CN105506554A (en) * | 2015-12-29 | 2016-04-20 | 电子科技大学 | Visible light/infrared band nano-optical absorbing coating and preparation method thereof |
| CN107039556A (en) * | 2017-04-24 | 2017-08-11 | 电子科技大学 | A kind of photovoltaic conversion structure |
| CN107123703A (en) * | 2017-06-22 | 2017-09-01 | 哈尔滨工业大学 | Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice |
| CN110218970A (en) * | 2018-03-02 | 2019-09-10 | 深圳先进技术研究院 | A kind of preparation method of two selenizings tin thin film |
| CN110423984A (en) * | 2019-08-13 | 2019-11-08 | 广东工业大学 | A kind of preparation method of stannic selenide nanometer sheet |
| CN111896523A (en) * | 2020-08-28 | 2020-11-06 | 深圳先进技术研究院 | Surface-enhanced Raman scattering substrate and preparation method and application thereof |
| CN112113669A (en) * | 2020-08-28 | 2020-12-22 | 哈尔滨工业大学 | Fish scale-shaped hollow SnSe nanotube self-powered infrared detector and preparation method thereof |
-
2021
- 2021-05-17 CN CN202110537411.4A patent/CN113324662A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060784A1 (en) * | 2004-09-17 | 2006-03-23 | Korea Institute Of Science And Technology | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure |
| WO2010033142A1 (en) * | 2008-05-30 | 2010-03-25 | Regents Of The University Of Minnesota | Detection beyond the standard radiation noise limit using spectrally selective absorption |
| CN101776484A (en) * | 2010-01-07 | 2010-07-14 | 中国电子科技集团公司第十三研究所 | Bolometer and manufacturing method thereof |
| CN101881667A (en) * | 2010-06-24 | 2010-11-10 | 电子科技大学 | Uncooled microbolometer and preparation method thereof |
| CN104692343A (en) * | 2015-03-17 | 2015-06-10 | 福州大学 | Tin selenide nano material, preparation method and application thereof |
| CN105399061A (en) * | 2015-11-18 | 2016-03-16 | 山东师范大学 | Preparation method for one-dimensional SnSe monocrystal nanowire |
| CN105506554A (en) * | 2015-12-29 | 2016-04-20 | 电子科技大学 | Visible light/infrared band nano-optical absorbing coating and preparation method thereof |
| CN107039556A (en) * | 2017-04-24 | 2017-08-11 | 电子科技大学 | A kind of photovoltaic conversion structure |
| CN107123703A (en) * | 2017-06-22 | 2017-09-01 | 哈尔滨工业大学 | Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice |
| CN110218970A (en) * | 2018-03-02 | 2019-09-10 | 深圳先进技术研究院 | A kind of preparation method of two selenizings tin thin film |
| CN110423984A (en) * | 2019-08-13 | 2019-11-08 | 广东工业大学 | A kind of preparation method of stannic selenide nanometer sheet |
| CN111896523A (en) * | 2020-08-28 | 2020-11-06 | 深圳先进技术研究院 | Surface-enhanced Raman scattering substrate and preparation method and application thereof |
| CN112113669A (en) * | 2020-08-28 | 2020-12-22 | 哈尔滨工业大学 | Fish scale-shaped hollow SnSe nanotube self-powered infrared detector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 刘娇: "硒化锡及硫化亚锡纳米材料的制备及物性研究", 《万方学位论文数据库》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300571A (en) * | 2021-10-22 | 2022-04-08 | 中国石油大学(华东) | Flexible single crystal thin film photoelectric detector and preparation method thereof |
| CN114485949A (en) * | 2022-01-27 | 2022-05-13 | 鸿海精密工业股份有限公司 | Microbolometer and method for manufacturing the same |
| CN114485949B (en) * | 2022-01-27 | 2024-05-28 | 鸿海精密工业股份有限公司 | Microbolometer and method for manufacturing same |
| WO2024087338A1 (en) * | 2022-10-25 | 2024-05-02 | 深圳先进技术研究院 | Thermosensitive thin film, infrared detector, and manufacturing method for infrared detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113324662A (en) | Uncooled infrared detector and preparation method thereof | |
| Zhang et al. | A Two‐Stage Annealing Strategy for Crystallization Control of CH3NH3PbI3 Films toward Highly Reproducible Perovskite Solar Cells | |
| Zerov et al. | Heat-sensitive materials for uncooled microbolometer arrays | |
| Dai et al. | Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method | |
| Huang et al. | Development of once-through manufacturing machine for large-area Perovskite solar cell production | |
| CN113130769A (en) | Two-dimensional layered perovskite single crystal, wide-spectrum photoelectric detector and preparation method thereof | |
| CN106206830B (en) | A kind of infrared detector based on graphene interlayers formula infrared absorption layer | |
| CN109292820A (en) | VO2/ ZnO bilayer film and preparation method thereof | |
| Nam et al. | Electrical properties of vanadium tungsten oxide thin films | |
| CN104659152A (en) | Photoelectric detector based on torsional double-layer graphene as well as preparation method of photoelectric detector | |
| CN109666909B (en) | Method for preparing flexible vanadium oxide composite film by low-temperature buffer layer technology | |
| US5300807A (en) | Thin film detector and method of manufacture | |
| Wang et al. | Modification of electrical properties of amorphous vanadium oxide (a-VOx) thin film thermistor for microbolometer | |
| Zhang et al. | TiO2− x films for bolometer applications: recent progress and perspectives | |
| Khrebtov et al. | High-temperature superconductor bolometers for the IR region | |
| Wang et al. | Preparation of homogeneous VOX thin films by ion beam sputtering and annealing process | |
| CN114107924B (en) | Heat-sensitive film for uncooled infrared micro-measurement bolometer | |
| CN112701188A (en) | Near-infrared photoelectric detector and preparation method thereof | |
| CN202534698U (en) | Ferroelectric tunnel junction room temperature infrared detector | |
| CN209387132U (en) | A kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic | |
| CN109988997B (en) | Thermosensitive film and preparation method and application thereof | |
| Wang et al. | Reactive ion beams sputtering of vanadium oxides films for uncooled microbolometer | |
| Fujishiro et al. | Investigation of fabrication conditions for VO2 thin films by MOD using carbon thermal reduction | |
| JP3727208B2 (en) | Temperature-sensitive resistance change film, manufacturing method thereof, and far-infrared sensor using the same | |
| Lu et al. | Towards high photoresponse of perovskite nanowire/copper phthalocyanine heterostructured photodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210831 |
|
| RJ01 | Rejection of invention patent application after publication |