CN107123703A - Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice - Google Patents
Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims abstract description 6
- 239000011247 coating layer Substances 0.000 claims abstract description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 238000001259 photo etching Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
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- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses the preparation method of the vertical photodetector based on free-standing stannic disulphide nano slice, it is related to photodetector technical field；Its preparation method is：Step one：The stannic disulphide nano slice of stand alone type vertical arrangement is prepared on conductive substrates；Step 2：Dry stannic disulphide nano slice being encapsulated after spin coating layer of transparent insulating barrier；Step 3：Partially transparent insulating barrier is etched away with plasma etching industrial, part stannic disulphide nano slice is exposed again；Step 4：Layer of transparent metal electrode is deposited, device is completed；The preparation technology of the present invention implements simple, it is to avoid the use of cumbersome and complicated photoetching technique；Compared to the photodetector of traditional parallel construction, scattering and doping that the substrate that the vertical electric explorer based on free-standing stannic disulphide nano slice avoids is caused add light absorbs, so as to improve its photodetection performance.
Description
Technical field：
The present invention relates to a kind of vertical photodetector and preparation method based on free-standing stannic disulphide nano slice, belong to
Photodetector technical field.
Background technology：
Photodetector be using semi-conducting material photoelectric effect principle prepared by a kind of Electro-Optical Sensor Set, its
The every field of military and national economy is widely used.In recent years, two-dimensional semiconductor nano material compares table because its is huge
Area, unique electronic structure and photoelectric characteristic turn into the ideal candidates material for preparing high-performance optical electrical part, and then receive
The extensive concern of people and research.At present, the photodetector prepared based on two-dimensional semiconductor nano material is with plane
(Q.H.Wang et al., Nat Nanotechnol, 2012,7,699-712 based on type structure；D.Jariwala et al.,
ACS Nano,2014,8,1102-1120).Have benefited from the ultra-thin characteristic of two-dimensional material, pass through complicated photoetching and micro-nano technology
Technique can prepare ultra-thin photodetector.But the two-dimensional ultrathin photodetector of this planar structure has obvious lack
Point and deficiency (G.Fiori et al., Nat Nanotechnol, 2014,9,768-779)：(1) due to being contacted with metal electrode
Area is larger to cause electric Contacts complicated, is easily caused leakage current；(2) influenceed seriously, easily to cause doping and dissipate by substrate
Penetrate；(3) absorbing ability is limited, reflects serious to incident ray.For problem above, developing two-dimensional semiconductor nano material is
The photodetector with vertical stratification on basis is undoubtedly a kind of very novel and effective solution route.
The content of the invention：
In view of the above-mentioned problems, the technical problem to be solved in the present invention is to provide one kind based on free-standing stannic disulphide nano slice
Vertical photodetector and preparation method.
The preparation method of the vertical photodetector based on free-standing stannic disulphide nano slice of the present invention, its preparation side
Method is：
Step one：The stannic disulphide nano slice of stand alone type vertical arrangement is prepared on conductive substrates；
Step 2：Dry stannic disulphide nano slice being encapsulated after spin coating layer of transparent insulating barrier；
Step 3：Partially transparent insulating barrier is etched away with plasma etching industrial, part stannic disulfide is exposed again
Nanometer sheet；
Step 4：Layer of transparent metal electrode is deposited, device is completed.
Preferably, the preparation technology for the stannic disulphide nano slice that the stand alone type described in the step one is arranged vertically is
Chemical vapour deposition technique, growth conductive substrates used are Fluorin doped tin ash (FTO) transparent conducting glass, and growth temperature is less than
450 DEG C, growth time is 5min.
Preferably, the transparent insulating layer described in the step 2 is polymethyl methacrylate (PMMA)；Spin coating is joined
Then number keeps 30s to keep 30s under 500rpm rotating speeds under 1000rpm rotating speeds, repeat 3-5 times；Drying temperature is 120 DEG C, is protected
The time is held for 5-10min.
Preferably, the plasma etching industrial described in the step 3 is oxygen gas plasma, radio-frequency power supply power
For 18W, etch period is 10-30min, and its purpose is to etch away upper strata PMMA until obtaining again exposed fraction two
Artificial gold nanometer sheet.
Preferably, the evaporation described in the step 4 is hot evaporation, metal electrode is the gold of purity 99.99%, is steamed
Plating thickness is 20nm.
A kind of vertical photodetector based on free-standing stannic disulphide nano slice, it include gold electrode, PMMA insulating barriers,
Vertical stannic disulphide nano slice and conductive substrates FTO glass；The gold electrode is positive pole, and FTO glass is negative pole, vertical curing
Tin nanometer sheet is opto-electronic conversion core cell, and PMMA insulating barriers are coated with the stannic disulphide nano slice of centre, and completely cut off power-on and power-off
Pole prevents short circuit.
Compared with prior art, beneficial effects of the present invention are：
1st, using chemical vapor deposition method, at a lower temperature (<450 DEG C) prepare two sulphur that stand alone type is arranged vertically
Change tin nanometer sheet；
2nd, because growth temperature is relatively low, the good conductive characteristic of FTO substrates is not destroyed, it is ensured that prepared by photodetector
Feasibility and reliability；
3rd, the free-standing distinctive vertical stratification of stannic disulphide nano slice determines that it is contacted with conductive substrates and metal electrode
Area is smaller, with good electrical contact, it is to avoid scattering and the influence of doping that substrate is caused to it；The nanometer of vertical arrangement
Incident light can be mutually reflected or reflected between piece and adds light absorbs, beneficial to raising photodetection performance；
4th, preparation technology implements simple, reproducible, it is to avoid the use of cumbersome and complicated photoetching technique, is two dimension half
The semiconductor nano material of conductor nano material, especially vertical-growth is constructed in photoelectric device and provides reliable system with application aspect
Standby example.
Brief description of the drawings：
For ease of explanation, the present invention is described in detail by following specific implementations and accompanying drawing.
Fig. 1 is structural representation of the invention；
Fig. 2 is arranged vertically the scanning of scanning electron microscope electron microscopic of stannic disulphide nano slice for stand alone type in the present invention
Mirror photo；
Fig. 3 is preparation flow schematic diagram of the invention；
Fig. 4 a, Fig. 4 b, Fig. 4 c are the vertical photodetector of free-standing stannic disulphide nano slice in present embodiment
Electron scanning micrograph；
I-E characteristics of the Fig. 5 for conductive substrates FTO of the invention before and after the free-standing stannic disulphide nano slice of growth
Curve comparison figure；
Fig. 6 is that the vertical stannic disulphide nano slice of stand alone type shown in the embodiment of the present invention 1 is put down with tradition prepared by comparative example 1
UV-visible absorption spectrum of the row stannic disulphide nano slice on FTO substrates；
Fig. 7 is the photoelectric properties test result of the vertical photodetector of free-standing stannic disulphide nano slice in the present invention：
Wherein Fig. 7 a are the current-voltage characteristic curve under different illumination conditions and intensity；Fig. 7 b, Fig. 7 c are that bias is 2V, 490nm ripples
Long, intensity of illumination is 475 μ W/cm2When photoresponse curve；
Fig. 8 is the photoelectric properties of the parallel photodetector prepared based on the stannic disulphide nano slice shown in comparative example 1
Test result：Wherein Fig. 8 a are the current-voltage characteristic curve under different illumination conditions and intensity, and illustration is prepared parallel
Stannic disulphide nano slice photodetector optical photograph；Fig. 8 b are that bias is 2V, and 490nm wavelength, intensity of illumination is 475 μ W/cm2
When photoresponse curve.
In figure：1- gold electrodes；2-PMMA insulating barriers；The vertical stannic disulphide nano slices of 3-；4- conductive substrates FTO glass.
Embodiment：
It is specific below by what is shown in accompanying drawing to make the object, technical solutions and advantages of the present invention of greater clarity
Embodiment describes the present invention.However, it should be understood that these descriptions are merely illustrative, and it is not intended to limit the model of the present invention
Enclose.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring the present invention's
Concept.
Embodiment 1：
As shown in figure 1, present embodiment uses following technical scheme：It includes gold electrode 1, PMMA insulating barriers 2, hung down
Straight stannic disulphide nano slice 3 and conductive substrates FTO glass 4；Gold electrode is positive pole in Fig. 1, and FTO glass 4 is negative pole, vertical two sulphur
It is opto-electronic conversion core cell to change tin nanometer sheet 3, and PMMA insulating barriers 2 are coated with the stannic disulphide nano slice of centre, and completely cut off
Bottom electrode prevents short circuit.
As shown in Fig. 2 using chemical vapor deposition method,, can when growth time is 5min in growth temperature~450 DEG C
The vertical stannic disulphide nano slice of stand alone type is provided in FTO Growns.
As shown in figure 3, one layer of PMMA of spin coating is with by vertical stannic disulfide nanometer on FTO substrates (Fig. 3 b) after growth
Piece is coated completely, and wherein then spin coating parameters keep 30s to keep 30s under 500rpm rotating speeds under 1000rpm rotating speeds, repeat 3-5
After secondary, 5-10min drying (Fig. 3 c) is kept at 120 DEG C.Then oxygen gas plasma is used, is 18W bars in radio-frequency power supply power
Under part, etching 10-30min is to remove upper strata PMMA until obtaining again exposed fraction stannic disulphide nano slice (Fig. 3 d).
It is the golden as electrode (Fig. 3 e) of 20nm that a layer thickness is finally deposited with hot evaporation process.
As shown in figure 4, the scanning of the vertical photodetector of free-standing stannic disulphide nano slice is electric shown in the present embodiment
Sub- microphotograph (figure a-c).The major part that can be seen that vertical stannic disulphide nano slice from Fig. 4 a and Fig. 4 b is wrapped up by PMMA,
The fraction nanometer sheet exposed is the result of oxygen gas plasma etching.Fig. 4 c are the horizontal stroke of prepared vertical photodetector
Cross-sectional scanning electron microphotograph, it can be seen that the stannic disulphide nano slice in device has good contact with FTO substrates, and
Its vertical stratification is maintained, nanometer sheet is largely embedded in PMMA insulating barriers, and upper strata is gold electrode.
As shown in figure 5, it is growing free-standing stannic disulphide nano slice for the conductive substrates FTO shown in the embodiment of the present invention
Front and rear current-voltage characteristic curve comparison diagram.It can be seen that still being protected after being heat-treated at growth temperature~450 DEG C
Its original satisfactory electrical conductivity has been held, and then has demonstrated prepared by the vertical photodetector of stannic disulphide nano slice in the present embodiment
Feasibility and reliability.
As shown in fig. 6, it is shown in the vertical stannic disulphide nano slice of stand alone type and comparative example 1 shown in the embodiment of the present invention
UV-visible absorption spectrum of the Conventional parallel stannic disulphide nano slice on FTO substrates.It can be seen that comparing
For parallel stannic disulphide nano slice shown in comparative example 1, the vertical stannic disulphide nano slice shown in the embodiment of the present invention exists
High UV-Visible absorption ability has been shown in 300-800nm wave-length coverages.
As shown in fig. 7, it is the vertical photodetector of the free-standing stannic disulphide nano slice shown in the embodiment of the present invention
Photoelectric properties test result：Fig. 7 a are the current-voltage characteristic curve under different illumination conditions and intensity；Fig. 7 b, Fig. 7 c is
Bias as 2V, 490nm wavelength, intensity of illumination is 475 μ W/cm2When photoresponse curve.As can be seen that the vertical photodetection
Device is obvious responsed to illumination, and maximum current on-off ratio is 19；The photoresponse time is fast, reproducible, and photoresponse rises and declined
The time of moving back is only 43.4ms and 64.4ms.
Comparative example 1：
This comparative example is prepared for the photodetector of conventional planar structure based on stannic disulphide nano slice, and by its with
The photoelectric properties of the vertical photodetector of free-standing stannic disulphide nano slice shown in the embodiment of the present invention are made comparisons.
As shown in Fig. 2 using chemical vapor deposition method,, can when growth time is 5min in growth temperature~450 DEG C
Vertical stannic disulphide nano slice is provided in FTO Growns.
The FTO substrates that growth has vertical stannic disulphide nano slice are put into ultrasound 5-10s in ethanol, obtained containing two sulphur
Change the ethanol solution of tin nanometer sheet；Then the above-mentioned solution drop coatings of 3-5ml are taken to SiO2/ Si substrates, it is dried at 80 DEG C
To parallel stannic disulphide nano slice；Then it is mask with the copper mesh that rib width is 5 μm, using hot evaporation process in evaporation thickness above
For the golden as conductive electrode of 30nm, remove the stannic disulphide nano slice photodetector that planar structure is obtained after copper mesh；Device
Before test, 30min is annealed at 200 DEG C to ensure to form excellent electric contact between metal electrode and nanometer sheet.
As shown in fig. 6, it is the Conventional parallel stannic disulphide nano slice shown in comparative example 1 and the independence shown in embodiment 1
UV-visible absorption spectrum of the vertical stannic disulphide nano slice of formula on FTO substrates.It can be seen that parallel two sulphur
The stand alone type that ultraviolet-ray visible absorbing intensity of the change tin nanometer sheet in 300-800nm wave-length coverages is below shown in embodiment 1 is hung down
Straight stannic disulphide nano slice.
As shown in figure 8, it is the parallel photodetector prepared based on stannic disulphide nano slice shown in comparative example 1
Photoelectric properties test result：Fig. 8 a are the current-voltage characteristic curve under different illumination conditions and intensity, and illustration is prepared
Parallel stannic disulphide nano slice photodetector optical photograph；Fig. 8 b are that bias is 2V, and 490nm wavelength, intensity of illumination is 475 μ
W/cm2When photoresponse curve.It can be seen that response of the parallel photodetector of the stannic disulphide nano slice to illumination
Excessively poor, current on/off ratio is less than 1.3；Its photoresponse time is very slow, rises and fall time is more than 100s, lag far behind
In the photoelectric properties of the vertical photodetector of the free-standing stannic disulphide nano slice shown in the embodiment of the present invention 1.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as to the claim involved by limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art should
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It may be appreciated other embodiment.
Claims (6)
1. the preparation method of the vertical photodetector based on free-standing stannic disulphide nano slice, it is characterised in that：Its preparation
Method is：
Step one：The stannic disulphide nano slice of stand alone type vertical arrangement is prepared on conductive substrates；
Step 2：Dry stannic disulphide nano slice being encapsulated after spin coating layer of transparent insulating barrier；
Step 3：Partially transparent insulating barrier is etched away with plasma etching industrial, part stannic disulfide nanometer is exposed again
Piece；
Step 4：Layer of transparent metal electrode is deposited, device is completed.
2. the vertical photodetector based on free-standing stannic disulphide nano slice, it is characterised in that：It is exhausted that it includes gold electrode, PMMA
Edge layer, vertical stannic disulphide nano slice and conductive substrates FTO glass；The gold electrode is positive pole, and FTO glass is negative pole, vertically
Stannic disulphide nano slice is opto-electronic conversion core cell, and PMMA insulating barriers are coated with the stannic disulphide nano slice of centre, and completely cut off
Upper/lower electrode prevents short circuit.
3. the preparation method of the vertical photodetector according to claim 1 based on free-standing stannic disulphide nano slice,
It is characterized in that：The preparation technology of the stannic disulphide nano slice of stand alone type vertical arrangement described in the step one is chemical gas
Phase sedimentation, growth conductive substrates used are Fluorin doped tin dioxide transparent conductive glass, and growth temperature is less than 450 DEG C, growth
Time is 5min.
4. the preparation method of the vertical photodetector according to claim 1 based on free-standing stannic disulphide nano slice,
It is characterized in that：Transparent insulating layer described in the step 2 is polymethyl methacrylate；Spin coating parameters turn for 500rpm
Speed is lower to keep 30s, and 30s is then kept under 1000rpm rotating speeds, is repeated 3-5 times；Drying temperature is 120 DEG C, and the retention time is 5-
10min。
5. the preparation method of the vertical photodetector according to claim 1 based on free-standing stannic disulphide nano slice,
It is characterized in that：Plasma etching industrial described in the step 3 is oxygen gas plasma, and radio-frequency power supply power is 18W,
Etch period is 10-30min, and its purpose is to etch away upper strata PMMA until obtaining again exposed fraction stannic disulfide
Nanometer sheet.
6. the preparation method of the vertical photodetector according to claim 1 based on free-standing stannic disulphide nano slice,
It is characterized in that：Evaporation described in the step 4 is hot evaporation, and metal electrode is the gold of purity 99.99%, evaporation thickness
For 20nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710479082.6A CN107123703A (en) | 2017-06-22 | 2017-06-22 | Vertical photodetector and preparation method based on free-standing stannic disulphide nano slice |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110396701A (en) * | 2019-08-19 | 2019-11-01 | 青岛科技大学 | A kind of efficient electro-catalysis reduction carbon dioxide prepares catalyst of formic acid and preparation method thereof |
| CN112479155A (en) * | 2020-11-26 | 2021-03-12 | 同济大学 | Method for enhancing nonlinear optical performance of tin disulfide nanosheet |
| CN112820787A (en) * | 2021-01-27 | 2021-05-18 | 深圳先进技术研究院 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
-
2017
- 2017-06-22 CN CN201710479082.6A patent/CN107123703A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| GUANGBO LIU ET AL.: "Non-planar vertical photodetectors based on free standing two-dimensional SnS2 nanosheets", 《NANOSCALE》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110396701A (en) * | 2019-08-19 | 2019-11-01 | 青岛科技大学 | A kind of efficient electro-catalysis reduction carbon dioxide prepares catalyst of formic acid and preparation method thereof |
| CN110396701B (en) * | 2019-08-19 | 2021-10-22 | 青岛科技大学 | Electrode for preparing formic acid by efficiently electro-catalytically reducing carbon dioxide |
| CN112479155A (en) * | 2020-11-26 | 2021-03-12 | 同济大学 | Method for enhancing nonlinear optical performance of tin disulfide nanosheet |
| CN112479155B (en) * | 2020-11-26 | 2024-04-26 | 同济大学 | Method for enhancing nonlinear optical performance of tin disulfide nanosheets |
| CN112820787A (en) * | 2021-01-27 | 2021-05-18 | 深圳先进技术研究院 | Photoelectric detector based on vertical two-dimensional thin film material and preparation method thereof |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
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