CN110423984A - A kind of preparation method of stannic selenide nanometer sheet - Google Patents
A kind of preparation method of stannic selenide nanometer sheet Download PDFInfo
- Publication number
- CN110423984A CN110423984A CN201910745626.8A CN201910745626A CN110423984A CN 110423984 A CN110423984 A CN 110423984A CN 201910745626 A CN201910745626 A CN 201910745626A CN 110423984 A CN110423984 A CN 110423984A
- Authority
- CN
- China
- Prior art keywords
- stannic selenide
- nanometer sheet
- substrate
- preparation
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of semiconductor material more particularly to a kind of preparation methods of stannic selenide nanometer sheet.This application provides a kind of preparation methods of stannic selenide nanometer sheet, the following steps are included: using vacuum coating method, using stannic selenide as evaporation source, with setting substrate above the stannic selenide evaporation source, the evaporation source is 2.4~2.6cm at a distance from the substrate, and the temperature of the vacuum coating is 460 DEG C -480 DEG C, and the time of the vacuum coating is 5~10min, under vacuum conditions, stannic selenide nanometer sheet is made in the surface of the substrate.The present invention is made the stannic selenide product with nanometer chip architecture, efficiently solves the technical issues of stannic selenide with nanometer sheet microstructure can not be made in existing vacuum thermal evaporation methods by the relevant parameter of improvement vacuum coating.
Description
Technical field
The invention belongs to the technical field of semiconductor material more particularly to a kind of preparation methods of stannic selenide nanometer sheet.
Background technique
IV race selenide material is due to it with unique photoelectricity thermoelectricity capability, in earth resource rich reserves and at low cost
The advantages that honest and clean and receive significant attention.
Stannic selenide SnSe is narrow bandgap semiconductor material, belongs to rhombic system, and crystal is in layer structure, and band gap is
1.0-1.5eV, due to its excellent photoelectric properties, nontoxicity, the advantage of cheap raw material and reserves relative abundance, close red
There is important application prospect in outer photodetection, photovoltaic cell.In addition, SnSe is due to its ultralow thermal conductivity and excellent electrical property
Energy and a kind of very promising thermoelectric material.
Currently, the preparation of SnSe nanostructure can pass through accomplished in many ways: South Korea Sung Yun-Mo etc. is heavy using gas phase
Area method successfully prepares the two-dimentional SnSe nanometer sheet perpendicular to substrate in tube furnace, and this method uses the mixing of argon gas and hydrogen
The growth source of gasification is transported on the substrate of downstream and grows as protective atmosphere and carrier gas by gas, refering to CrystEngComm,
2014,16,5080；The bismuth nano particle of dispersion is passed through solution-liquid-solid method (SLS) mechanism catalytic nanometer by Li Can etc.
Line growth, with Sn [N (SiMe3)2]2With three pungent phosphine selenides (TOP-Se) in oleyl amine (OLA) or OLA/TOPO (trioctylphosphine oxygen
Change phosphine) in the mixed solvent prepares SnSe nano wire.Refering to Angew.Chem.Int.Ed.2011,50,12050-12053；Liu
Shuhao etc. uses chemical vapour deposition technique in tube furnace, using argon hydrogen gaseous mixture as carrier gas and protection gas, furnace temperature setting
For 923K, the SnSe powder of gasification is transported on the substrate of downstream and is grown, substrate uses silicon wafer and mica sheet, growth time 20
Minute, it is prepared for two-dimensional surface SnSe nano flake.Above-mentioned report can be seen that, in existing SnSe nanostructure preparation method,
Liquid phase method needs plurality of raw materials reaction growth for a long time in complicated solution system, and vapour deposition process needs specific gas to exist
Growth is transported in tube furnace, the disadvantages of these method and processes are complicated, condition is harsh, long between growth limits it industrially
Using.And Vacuum sublimation is a kind of traditional film plating process, has preparation process simple, easy to operate, deposition rate is high
The advantages that, preparing SnSe nanostructure using vacuum thermal evaporation is a kind of new preparation thinking, still, using existing conventional true
The SnSe product that empty thermal evaporation method is prepared, it is microcosmic on can not form conventional nanometer chip architecture, limit SnSe nanometers
The application of piece.
Summary of the invention
This application provides a kind of preparation methods of stannic selenide nanometer sheet, efficiently solve existing vacuum thermal evaporation methods
The technical issues of stannic selenide with nanometer sheet microstructure can not be made.
In view of this, this application provides a kind of preparation methods of stannic selenide nanometer sheet, comprising the following steps:
Using vacuum coating method, using stannic selenide as evaporation source, with setting substrate, institute above the stannic selenide evaporation source
It is 2.4~2.6cm that evaporation source, which is stated, at a distance from the substrate, and the temperature of the vacuum coating is 460 DEG C -480 DEG C, the vacuum
The time of plated film is 5~10min, and under vacuum conditions, stannic selenide nanometer sheet is made in the surface of the substrate.
It should be noted that suitable stannic selenide can be added according to actual needs.
It should be noted that poured into after SnSe powder is weighed as evaporation source in crucible, 2.4 above evaporation source~
Substrate is placed at 2.6cm, when vacuum degree reaches 2 × 10 in vacuum thermal evaporation coating machine-5Pa~5 × 10-5When Pa, by evaporation source
460~480 DEG C are equably warming up to, is kept for 5~10 minutes, the SnSe film sample of black deposit is finally obtained on substrate
Product.
Preferably, the substrate is selected from quartz glass, silicon wafer, ITO electro-conductive glass or molybdenum foil.
Preferably, the vacuum degree of the vacuum environment is 2 × 10-5Pa~5 × 10-5Pa。
Preferably, the stannic selenide is selenizing tin powder, the particle size range of the selenizing tin powder is 50 mesh~200
Mesh.
Preferably, the equipment of the vacuum coating is multi-source high vacuum thermal evaporation coating machine.
Preferably, the stannic selenide nanometer sheet is the stannic selenide nanometer sheet of rhombic system.
Preferably, the purity of the selenizing tin powder is >=98%.
It should be noted that the quality of SnSe powder is 0.197g, purity is >=98%.
More preferably, the purity of the selenizing tin powder is 99.999%.
As can be seen from the above technical solutions, the application has the following advantages:
Using vacuum coating method, evaporation source material evaporation or distillation are that vapour particles are conveyed to substrate surface, in substrate
Surface forming core, long great achievement solid film.The invention discloses a kind of preparation methods of stannic selenide nanometer sheet, using stannic selenide as steaming
It rises, with setting substrate above stannic selenide evaporation source, evaporation source is 2.4~2.6cm, the temperature of vacuum coating at a distance from substrate
It is 460 DEG C -480 DEG C, the time of vacuum coating is 5~10min, and under vacuum conditions, stannic selenide nanometer is made in the surface of substrate
Piece.The stannic selenide product with nanometer chip architecture is made by the relevant parameter of improvement vacuum coating in the present invention, and the application is not necessarily to
The stannic selenide of nanometer chip architecture is made without carrying out the extra process such as heating to substrate in catalyst auxiliary, nanometer chip architecture
Stannic selenide is conducive to the preparation and application of various nano-devices, for example can make lithium ion battery due to its specific surface area height,
Because big specific surface area is conducive to more lithium ion insertions and abjection, Er Feina which reduce the diffusion path of lithium ion
Rice chip architecture is without this effect.The preparation method of the application is simple, and environmental pollution is small, and unprotect gas and carrier gas, used time are short, easy
It in operation, promotes, large area preparation can be carried out, thus there is important researching value and wide application prospect.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described.
Fig. 1 is the X ray diffracting spectrum of stannic selenide nanometer sheet made from the embodiment of the present application 1, and display sample is orthorhombic
The SnSe of system, diffraction maximum are consistent with PDF#48-1224 standard card, and in addition there are the diffraction maximums from Si, from substrate
Si piece；
Fig. 2 is the amplification 50k multiple surface Scanning Electron microscope of stannic selenide nanometer sheet made from the embodiment of the present application 1
Figure, display stannic selenide nanometer sheet are the continuous nanometer sheet perpendicular to substrate；
Fig. 3 is the amplification 20k multiple surface Scanning Electron microscope of stannic selenide nanometer sheet made from the embodiment of the present application 1
Figure, display stannic selenide nanometer sheet are the continuous nanometer sheet perpendicular to substrate；
Fig. 4 is the Sn distribution diagram of element of stannic selenide nanometer sheet made from the embodiment of the present application 1, it was demonstrated that Sn element is uniformly distributed
In film；
Fig. 5 is the Se distribution diagram of element of stannic selenide nanometer sheet made from the embodiment of the present application 1, it was demonstrated that Se element is uniformly distributed
In film；
Fig. 6 is the scanning electron microscope diagram of product surface made from the application comparative example 1；
Fig. 7 is the scanning electron microscope diagram of product surface made from the application comparative example 2；
Fig. 8 is the scanning electron microscope diagram of product surface made from the application comparative example 3.
Specific embodiment
The present invention provides a kind of preparation methods of stannic selenide nanometer sheet, efficiently solve existing vacuum thermal evaporation methods
The technical issues of stannic selenide with nanometer sheet microstructure can not be made.
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
Wherein, it is commercially available or self-control that following embodiment is raw materials used, following embodiment is raw materials used be it is commercially available or from
System.
Embodiment 1
The embodiment of the present application 1 provides the preparation method of the first stannic selenide nanometer sheet, the specific steps are as follows:
It pours into crucible after the selenizing tin powder (its purity is 99.999%) of 0.197g is weighed as evaporation source, is steaming
Silicon wafer is placed above rising at 2.5cm as substrate, when vacuum degree reaches 5 × 10 in multi-source high vacuum thermal evaporation coating machine-5Pa
When, evaporation source is equably warming up to 470 DEG C, progress vacuum coating in 5 minutes is kept, black sediment is finally obtained on substrate
Stannic selenide nanometer sheet is made in object.
X-ray diffraction detection is carried out to stannic selenide nanometer sheet made from the embodiment of the present application 1, as shown in Figure 1, it can be seen that
Stannic selenide nanometer sheet is the SnSe of rhombic system, and diffraction maximum is consistent with PDF#48-1224 standard card, and in addition there are come from Si
Diffraction maximum, from the Si piece of substrate.
Electron microscopy is scanned to stannic selenide nanometer sheet made from the embodiment of the present invention 1.As shown in figures 2-3,
Fig. 2 is the scanning electron microscope diagram for amplifying 50k times, and Fig. 3 is the scanning electron microscope diagram for amplifying 20k times, it can be seen that selenium
Changing tin nanometer sheet surface is the continuous film perpendicular to the nanometer sheet composition of substrate.
Elemental redistribution detection is carried out to the microcell of stannic selenide nanometer sheet made from the embodiment of the present invention 1.As shown in Figures 4 and 5,
Fig. 4 is selected areas Sn distribution diagram of element, it can be seen that Sn element is evenly distributed in film.Fig. 5 is selected areas Se element point
Butut, it can be seen that Se element is evenly distributed in film.In conclusion what this film was made of continuous SnSe nanometer sheet.
Embodiment 2
The embodiment of the present application 2 provides the preparation method of second of stannic selenide nanometer sheet, the specific steps are as follows:
It is poured into after the SnSe powder (99.999%) of 0.197g is weighed as evaporation source in crucible, above evaporation source
ITO electro-conductive glass is placed at 2.4cm as substrate, when vacuum degree reaches 2 × 10 in vacuum thermal evaporation coating machine-5When Pa, it will steam
It rises and is equably warming up to 460 DEG C, kept for 6 minutes, the stannic selenide nanometer sheet of black deposit is finally obtained on substrate.
X-ray diffraction result, scanning electron microscope result and the Elemental redistribution inspection of the stannic selenide nanometer sheet of the present embodiment
It is similar to the X-ray diffraction result of embodiment 1, scanning electron microscope result and Elemental redistribution testing result to survey result.
Embodiment 3
The embodiment of the present application 3 provides the preparation method of the third stannic selenide nanometer sheet, the specific steps are as follows:
It is poured into after the SnSe powder (99.999%) of 0.197g is weighed as evaporation source in crucible, above evaporation source
Molybdenum foil is placed at 2.6cm as substrate, when vacuum degree reaches 3.5 × 10 in vacuum thermal evaporation coating machine-5It is when Pa, evaporation source is equal
It is warming up to 480 DEG C evenly, is kept for 5 minutes or so, the stannic selenide nanometer sheet of black deposit is finally obtained on substrate.
X-ray diffraction result, scanning electron microscope result and the Elemental redistribution inspection of the stannic selenide nanometer sheet of the present embodiment
It is similar to the X-ray diffraction result of embodiment 1, scanning electron microscope result and Elemental redistribution testing result to survey result.
Embodiment 4
The embodiment of the present application 4 provides the preparation method of the 4th kind of stannic selenide nanometer sheet, the specific steps are as follows:
It is poured into after the SnSe powder (99.999%) of 0.197g is weighed as evaporation source in crucible, above evaporation source
Silicon wafer is placed at 2.5cm as substrate, when vacuum degree reaches 5 × 10 in vacuum thermal evaporation coating machine-5It is when Pa, evaporation source is uniform
Ground is warming up to 475 DEG C, is kept for 5 minutes or so, the stannic selenide nanometer sheet of black deposit is finally obtained on substrate.
X-ray diffraction result, scanning electron microscope result and the Elemental redistribution inspection of the stannic selenide nanometer sheet of the present embodiment
It is similar to the X-ray diffraction result of embodiment 1, scanning electron microscope result and Elemental redistribution testing result to survey result.
Comparative example 1
The application provides and comparative example 1 similar in embodiment 1, the specific steps are as follows:
It pours into crucible after the selenizing tin powder (its purity is 99.999%) of 0.197g is weighed as evaporation source, is steaming
Silicon wafer is placed above rising at 10cm as substrate, the temperature of substrate is 380 DEG C, when true in multi-source high vacuum thermal evaporation coating machine
Reciprocal of duty cycle reaches 5 × 10-5When Pa, evaporation source is equably warming up to 450 DEG C, progress vacuum coating in 20 minutes is kept, finally in base
On piece obtains deposited samples, and 1 product of comparative example is made.
Electron microscopy is scanned to product made from comparative example 1 of the present invention.As shown in fig. 6, Fig. 6 is comparative example
The scanning electron microscope diagram of 1 product surface, as can be seen from Figure 6, the microcosmic of the product of comparative example 1 is not nanometer chip architecture.
Comparative example 2
The application provides and comparative example 2 similar in embodiment 1, the specific steps are as follows:
It pours into crucible after the selenizing tin powder (its purity is 99.999%) of 0.197g is weighed as evaporation source, is steaming
Silicon wafer is placed above rising at 10cm as substrate, the temperature of substrate is 450 DEG C, when true in multi-source high vacuum thermal evaporation coating machine
Reciprocal of duty cycle reaches 5 × 10-5When Pa, evaporation source is equably warming up to 400 DEG C, progress vacuum coating in 15 minutes is kept, finally in base
On piece obtains deposited samples, and 2 product of comparative example is made.
Electron microscopy is scanned to product made from comparative example 2 of the present invention.As shown in fig. 7, Fig. 7 is comparative example
The scanning electron microscope diagram of 2 product surfaces, as can be seen from Figure 7, the microcosmic of the product of comparative example 2 is not nanometer chip architecture.
Comparative example 3
The application provides and comparative example 3 similar in embodiment 1, the specific steps are as follows:
It pours into crucible after the selenizing tin powder (its purity is 99.999%) of 0.197g is weighed as evaporation source, is steaming
Silicon wafer is placed above rising at 10cm as substrate, the temperature of substrate is 450 DEG C, when true in multi-source high vacuum thermal evaporation coating machine
Reciprocal of duty cycle reaches 5 × 10-5When Pa, evaporation source is equably warming up to 400 DEG C, progress vacuum coating in 10 minutes is kept, finally in base
On piece obtains deposited samples, and 3 product of comparative example is made.
Electron microscopy is scanned to product made from comparative example 3 of the present invention.As shown in figure 8, Fig. 8 is comparative example
The scanning electron microscope diagram of 3 product surfaces, as it can be observed in the picture that the microcosmic of the product of comparative example 3 is not nanometer chip architecture.
The description of the present application and term " first " in above-mentioned attached drawing, " second ", " third ", " the 4th " etc. are (if deposited
) it is to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that use in this way
Data are interchangeable under appropriate circumstances, so that embodiments herein described herein for example can be in addition to illustrating herein
Or the sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that
Cover it is non-exclusive include, for example, containing the process, method, system, product or equipment of a series of steps or units need not limit
In step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, produce
The other step or units of product or equipment inherently.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of preparation method of stannic selenide nanometer sheet, which comprises the following steps:
Using vacuum coating method, using stannic selenide as evaporation source, with setting substrate, the steaming above the stannic selenide evaporation source
It rises for 2.4~2.6cm at a distance from the substrate, the temperature of the vacuum coating is 460 DEG C -480 DEG C, the vacuum coating
Time be 5~10min, under vacuum conditions, stannic selenide nanometer sheet is made in the surface of the substrate.
2. preparation method according to claim 1, which is characterized in that the substrate is selected from quartz glass, silicon wafer, ITO
Electro-conductive glass or molybdenum foil.
3. preparation method according to claim 1, which is characterized in that the vacuum degree of the vacuum environment is 2 × 10-5Pa~
5×10-5Pa。
4. preparation method according to claim 1, which is characterized in that the stannic selenide is selenizing tin powder, the selenizing
The particle size range of tin powder is 50 mesh~200 mesh.
5. preparation method according to claim 1, which is characterized in that the equipment of the vacuum coating is multi-source high vacuum heat
Evaporation coating machine.
6. preparation method according to claim 1, which is characterized in that the stannic selenide nanometer sheet is the selenizing of rhombic system
Tin nanometer sheet.
7. preparation method according to claim 1, which is characterized in that the purity of the selenizing tin powder is >=98%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910745626.8A CN110423984A (en) | 2019-08-13 | 2019-08-13 | A kind of preparation method of stannic selenide nanometer sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910745626.8A CN110423984A (en) | 2019-08-13 | 2019-08-13 | A kind of preparation method of stannic selenide nanometer sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110423984A true CN110423984A (en) | 2019-11-08 |
Family
ID=68414430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910745626.8A Pending CN110423984A (en) | 2019-08-13 | 2019-08-13 | A kind of preparation method of stannic selenide nanometer sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110423984A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261737A (en) * | 2020-01-21 | 2020-06-09 | 广东工业大学 | SnSe/Bi2Se3Nanosheet heterojunction and preparation method thereof |
| CN111908433A (en) * | 2020-07-16 | 2020-11-10 | 深圳大学 | Method for repairing selenium vacancy defect in stannous selenide nanosheet |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
| CN114583160A (en) * | 2022-03-09 | 2022-06-03 | 广东工业大学 | Tin selenide nanosheet array/carbon cloth composite cathode material structure for sodium ion battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420815A (en) * | 2016-01-07 | 2016-03-23 | 中国科学院理化技术研究所 | Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet |
| KR101617953B1 (en) * | 2014-08-06 | 2016-05-03 | 고려대학교 산학협력단 | A method for manufacturing vertically aligned SnSe nanosheets via physical vapor deposition |
-
2019
- 2019-08-13 CN CN201910745626.8A patent/CN110423984A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101617953B1 (en) * | 2014-08-06 | 2016-05-03 | 고려대학교 산학협력단 | A method for manufacturing vertically aligned SnSe nanosheets via physical vapor deposition |
| CN105420815A (en) * | 2016-01-07 | 2016-03-23 | 中国科学院理化技术研究所 | Controllable method for preparing orthogonal-phase stannous sulfide two-dimensional monocrystalline nanosheet |
Non-Patent Citations (1)
| Title |
|---|
| NORDIN SABLI.ET.AL: "SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method", 《ELECTROCHEMISTRY》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261737A (en) * | 2020-01-21 | 2020-06-09 | 广东工业大学 | SnSe/Bi2Se3Nanosheet heterojunction and preparation method thereof |
| CN111261737B (en) * | 2020-01-21 | 2022-08-12 | 广东工业大学 | SnSe/Bi 2 Se 3 Nanosheet heterojunction and preparation method thereof |
| CN111908433A (en) * | 2020-07-16 | 2020-11-10 | 深圳大学 | Method for repairing selenium vacancy defect in stannous selenide nanosheet |
| CN111908433B (en) * | 2020-07-16 | 2022-06-14 | 深圳大学 | Method for repairing selenium vacancy defect in stannous selenide nanosheet |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
| CN114583160A (en) * | 2022-03-09 | 2022-06-03 | 广东工业大学 | Tin selenide nanosheet array/carbon cloth composite cathode material structure for sodium ion battery |
| CN114583160B (en) * | 2022-03-09 | 2024-04-26 | 广东工业大学 | Tin selenide nano-sheet array/carbon cloth composite anode material structure for sodium ion battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110423984A (en) | A kind of preparation method of stannic selenide nanometer sheet | |
| Zhou et al. | Colloidal CZTS nanoparticles and films: preparation and characterization | |
| Jiang et al. | Cu2ZnSnS4 polycrystalline thin films with large densely packed grains prepared by sol-gel method | |
| JP4279455B2 (en) | Solution synthesis of mixed metal chalcogenide nanoparticles and spray deposition of precursor films | |
| CN105463580A (en) | Preparation method of cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet | |
| Chen et al. | Zinc gallium oxide—a review from synthesis to applications | |
| CN108546994B (en) | A kind of two phosphide atom crystal of two-dimentional three selenizing and its preparation method and application | |
| Nakagawa et al. | Fabrication of single-phase polycrystalline BaSi2 thin films on silicon substrates by vacuum evaporation for solar cell applications | |
| Carter et al. | Cu2ZnSn (S, Se) 4 solar cells from inks of heterogeneous Cu–Zn–Sn–S nanocrystals | |
| JP2018113453A (en) | Group 13 selenide nanoparticles | |
| CN109437124B (en) | Method for synthesizing single-layer transition metal chalcogenide | |
| CN107188220B (en) | A kind of two-dimensional nano Ga2In4S9The preparation method and product of crystalline material | |
| Tai et al. | Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction | |
| CN104746144A (en) | Preparation method of stannic disulfide monocrystal nanosheet | |
| Liu et al. | Colloidal synthesis of Cu2FeSnSe4 nanocrystals for solar energy conversion | |
| Pedapudi et al. | A novel high performance photodetection based on axial NiO/β-Ga2O3 pn junction heterostructure nanowires array | |
| Thahab et al. | Influence of substrate type on the structural, optical and electrical properties of CdxZn1− xS MSM thin films prepared by Spray Pyrolysis method | |
| Gu et al. | Chemical vapor deposition of two-dimensional PbS nanoplates for photodetection | |
| CN110028047B (en) | Mono-oriented and compositionally tunable CdSxSe1-xAlloy nanowire array and preparation method thereof | |
| Verma et al. | Heat-up and gram-scale synthesis of Cu-poor CZTS nanocrystals with controllable compositions and shapes | |
| Sahu et al. | Growth and application of ZnO nanostructures | |
| CN102040201A (en) | Solvothermal controllable method for preparing ZnSe and ZnTe nano materials | |
| Luo et al. | Phase-controlled synthesis of SnS2 and SnS flakes and photodetection properties | |
| Tair et al. | n-type SnS2 thin films spray-coated from transparent molecular ink as a non-toxic buffer layer for solar photovoltaics | |
| Azeez et al. | Synthesis and characteristics of screen printed ZnO thick films nanostructures grown using different methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191108 |