CN209387132U - A kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic - Google Patents
A kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic Download PDFInfo
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- CN209387132U CN209387132U CN201822133226.5U CN201822133226U CN209387132U CN 209387132 U CN209387132 U CN 209387132U CN 201822133226 U CN201822133226 U CN 201822133226U CN 209387132 U CN209387132 U CN 209387132U
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Abstract
The application utilizes the characteristic of the electroluminescent phase transformation of vanadium oxide film, proposes a kind of vanadium oxide terahertz detector.It has been abandoned complicated high temperature coefficient of resistance material preparation process and has explored, on the basis of conventional flat detector circuit reading out structure, introduce new design framework, i.e. in vanadium oxide thermosensitive film upper and lower surfaces making alive, by adjusting voltage, the temperature-coefficient of electrical resistance of vanadium oxide film is adjusted, and then improves detector sensitivity.The electrode newly introduced in application scheme is also can serve as the absorbed layer of detector, and by emulation, detector has average 75% absorptivity in 30~100 μm of terahertz wave bands.
Description
Technical field
This application involves non-brake method microbolometer technical fields, are suitable for more particularly to a kind of based on vanadium oxide
The detector of terahertz wave band.
Background technique
Non-brake method microbolometer based on vanadium oxide originates from the last century 80's Mo, the design of the type detector
At the beginning of be detection for 8~14 μm of far infrared bands, mechanism is detected according to its heat radiation, can theoretically detect cover it is close red
The outer heat radiation light for arriving millimeter wave range.By nearly development in 30 years, the non-brake method micrometering based on vanadium oxide thermal resistance sensitive thin film
Bolometer has made great progress in terms of detectivity, can achieve 109cm ﹒ Hz1/2/ w, this is than THz wave field of detecting
The high an order of magnitude of common deuterated l-Alanine triglycine sulfate (DLATGS) pyroelectric detector, but detected than refrigeration mode
Device, such as the still low at least an order of magnitude of liquid helium refrigeration superconductor detector.But, current non-brake method microbolometer limit
Ambient noise detection limit at room temperature has not been reached yet in structure and material, thus there is also certain rooms for improvement.
Currently, improving the 1/f noise and improve oxidation that non-brake method microbolometer performance major way is reduction system
The temperature-coefficient of electrical resistance of vanadium film.Wherein, the 1/f noise of entire detector system depends primarily on consolidating for vanadium oxide film itself
There are attribute, reduced space very little.Thus, the temperature-coefficient of electrical resistance for how improving vanadium oxide film always is the master in the field
Want research direction.There are mainly two types of the temperature-coefficient of electrical resistances that means improve vanadium oxide film at present, first is that heavy using laser pulse
The sophisticated equipments such as product prepare high quality single crystal vanadium oxide film；Second is that using a certain proportion of tungsten is adulterated, the elements such as nitrogen improve electricity
Hinder temperature coefficient.
But, although pulse laser deposition and element doping method can obtain up to 4% and 7% resistance temperature respectively
Coefficient, but the preparation process of the two is still extremely complex, has higher requirement to equipment, material, and it is raw to be unfavorable for high-volume
Produce production.
Utility model content
In view of this, being directed to above-mentioned technical problem of the existing technology, the utility model proposes a kind of new detectors
Bridge deck structure, the temperature-coefficient of electrical resistance of vanadium oxide can be greatlyd improve from the angle of optimization panel detector structure, and then is enhanced and visited
Survey the sensitivity that device is detected in terahertz wave band.
Specifically, the utility model proposes a kind of detector based on vanadium oxide phase-change characteristic, the bridge floors of the detector
Including vanadium oxide thermosensitive film and the first electrode being electrically connected with the vanadium oxide thermosensitive film, it is characterised in that: parallel
In on the direction of the vanadium oxide thermosensitive film test surface, the positive and negative anodes of the first electrode are located at the vanadium oxide temperature-sensitive
The two sides of film；The bridge floor of the detector further includes the second electrode being electrically connected with the vanadium oxide thermosensitive film；Vertical
In on the direction of the vanadium oxide thermosensitive film test surface, the positive and negative anodes of the second electrode are located at the vanadium oxide temperature-sensitive
The two sides of film.Preferably, the second electrode be Ti electrode, the second electrode with a thickness of 2nm.
Further, also there is silicon nitride layer between the second electrode and the vanadium oxide thermosensitive film.The nitridation
The thickness of silicon layer is preferably 10nm.
In addition, the detector further includes monocrystalline substrate and metallic mirror, the metallic mirror is located at the list
The inside of crystalline silicon substrate；The bridge floor of the detector combines to form 1/4 wavelength resonant cavity with the metallic mirror.Preferably,
The monocrystalline substrate is the monocrystalline silicon thickness substrate of 200 μ m thicks.The metallic mirror is made of an aluminium reflecting layer.
Wherein, the monocrystalline substrate can be " U " font structure；Setting is in the vanadium oxide thermosensitive film described in
Silicon nitride layer on the inside of resonant cavity is directly connected with the monocrystalline substrate to constitute supporting layer.Further, the first electrode
It can directly be mounted in and be set to the vanadium oxide thermosensitive film towards on the silicon nitride layer on the inside of the resonant cavity.
According to the utility model proposes have by optimization bridge deck structure detector, compared with the existing technology in system
The standby monocrystalline with high temperature coefficient of resistance, or other elements are adulterated in vanadium oxide film to improve temperature-coefficient of electrical resistance
Scheme is compared, and the characteristic of the electroluminescent phase transformation of vanadium oxide film is utilized, and has been abandoned complicated material preparation process and has been explored, in traditional water
On the basis of flat detector circuit reading out structure, new design framework is introduced, i.e., is added in vanadium oxide thermosensitive film upper and lower surfaces
Voltage realizes the raising of the temperature-coefficient of electrical resistance of vanadium oxide film, so that detector sensitivity is big by adjusting voltage
Increase.In addition, the electrode newly introduced is also can serve as the absorbed layer of detector, by emulation, detector is in 30-100 μm of THz wave
Section has average 75% absorptivity.
The above description is merely an outline of the technical solution of the present invention, in order to better understand the skill of the utility model
Art means, and can be implemented in accordance with the contents of the specification, below on the preferred embodiment of the present invention and the accompanying drawings in detail
It describes in detail bright as after.
Detailed description of the invention
The attached drawing for constituting a part of the utility model is used to provide a further understanding of the present invention, this is practical new
The illustrative embodiments and their description of type are not constituteed improper limits to the present invention for explaining the utility model.?
In attached drawing:
Fig. 1 shows the structure chart of the terahertz wave detector based on vanadium oxide phase-change characteristic of the application；
Fig. 2 shows the simulation absorption spectras of the detector terahertz wave band of the application (30~100 μm).
Appended drawing reference:
1. monocrystalline substrate；2. silicon nitride support layer；3. first electrode；4. metallic mirror；5. second electrode；6. oxidation
Vanadium thermosensitive film；7. silicon nitride dielectric layer.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
Figure of description 1 shows the structure chart of terahertz wave detector of the application based on vanadium oxide phase-change characteristic.Its
Including a U-shaped monocrystalline substrate 1, silicon nitride support layer 2, first electrode 3, metallic mirror 4, second electrode 5, vanadium oxide heat
Sensitive film 6, silicon nitride dielectric layer 7.Wherein monocrystalline substrate 1 can be the monocrystalline silicon thickness substrate of 200 μ m thicks, and the metal is anti-
The medial surface that the monocrystalline substrate 1 is arranged in mirror 4 is penetrated, so that detector bridge floor and the combination of the metallic mirror 4 form 1/4
Wavelength resonant cavity.THz wave enters above detector, and the THz wave that wavelength meets 4 times of length resonant cavity spacing will be close
100% absorbs.Preferably, the metallic mirror 4 can be made of an aluminium reflecting layer.
In traditional vanadium oxide detector, bridge floor includes electrode and vanadium oxide thermosensitive film, bigoted at electrode both ends
Constant-current source, when vanadium oxide absorbs THz wave and resistance is caused to change, the voltage change at measuring electrode both ends can be obtained
Obtain the optical power of THz wave.And the application on this basis further optimizes bridge deck structure.As shown in Figure 1, in oxygen
The upper and lower surface for changing vanadium thermosensitive film 6 also grows the silicon nitride layer or other insulating layer of silicon oxide for having logical thickness respectively, thus
Play necessary insulating effect.Specifically, such as using silicon nitride dielectric layer, the silicon nitride above vanadium oxide thermosensitive film 6 is
Silicon nitride dielectric layer 7 is formed, and the silicon nitride layer below vanadium oxide thermosensitive film 6 can directly be connected with monocrystalline substrate 1
Form silicon nitride support layer 2.Preferably, the silicon nitride layer with a thickness of 10nm.Further, in the silicon nitride dielectric layer 7
On and silicon nitride support layer 2 under again respectively grow one layer of metal material film to form second electrode 5.In view of whole
Requirement of the body structure to absorptivity, the thickness of metal film of above-mentioned second electrode 5 are 1-3nm, preferably 2nm.The material of metal
Preferably titanium.Detector bridge floor tool in this way there are two electrode, i.e., the second electrode 5 of 6 upper and lower ends of vanadium oxide thermosensitive film and
The first electrode 3 of 6 two sides of vanadium oxide thermosensitive film.In the present embodiment, the electrode 3 of 6 two sides of vanadium oxide thermosensitive film is also provided with
In the silicon nitride support layer 2, it is preferable that the first electrode 3 is aluminium electrode.
When detector works, apply certain voltage on such as Ti electrode of second electrode 5, to make vanadium oxide temperature-sensitive
Electroluminescent phase transformation occurs inside film 6, since electroluminescent phase transformation and phase transition temperature have strong correlation, to be applied to by adjusting
Voltage in second electrode 5 can change the temperature-coefficient of electrical resistance of the vanadium oxide thermosensitive film 6, and then obtain biggish spy
Survey sensitivity.In addition, the setting of the second electrode 5 is also used as the absorbed layer of detector.
The framework of the detector so proposed based on the application works as tool in the bigoted constant-current source in 3 both ends of first electrode
When thering is the vanadium oxide thermosensitive film 6 of the temperature-coefficient of electrical resistance of optimization to absorb THz wave and resistance is caused to change, institute is measured
The voltage change for stating 3 both ends of first electrode can be obtained THz wave optical power.It sets the thickness of vanadium oxide thermosensitive film 6 to
40nm, other parameters are as to the description of structure, by emulation, referring to Figure of description 2, detector is in 30-100 μm of terahertz above
Hereby wave band has average 75% absorptivity, and higher absorptivity also illustrates detector integrally sensitivity with higher.
The detector technology scheme based on vanadium oxide phase-change characteristic of the application is illustrated above.By increasing by one
To electrode, temperature-coefficient of electrical resistance bring is modulated using vanadium oxide electroluminescent phase transformation, realizes the raising of detector sensitivity.With
The prior art is compared, and the technical solution of the application is very beneficial for volume-produce without complicated technique.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation, any simple modification, equivalent change and modification made by the above technical examples according to the technical essence of the present invention,
It is still within the scope of the technical solutions of the present invention.
Claims (10)
1. a kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic, the bridge floor of the detector includes oxygen
The first electrode (3) changing vanadium thermosensitive film (6) and being electrically connected with the vanadium oxide thermosensitive film (6), it is characterised in that:
On the direction for being parallel to vanadium oxide thermosensitive film (6) test surface, the positive and negative anodes of the first electrode (3) distinguish position
In the two sides of the vanadium oxide thermosensitive film (6)；
The bridge floor of the detector further includes the second electrode (5) being electrically connected with the vanadium oxide thermosensitive film (6)；Perpendicular to
On the direction of vanadium oxide thermosensitive film (6) test surface, the positive and negative anodes of the second electrode (5) are located at the vanadium oxide
The two sides of thermosensitive film (6).
2. detector as described in claim 1, the second electrode (5) is Ti electrode.
3. detector as claimed in claim 1 or 2, the second electrode (5) with a thickness of 2nm.
4. detector as claimed in claim 1 or 2, between the second electrode (5) and the vanadium oxide thermosensitive film (6)
Also there is silicon nitride layer.
5. detector as claimed in claim 4, the silicon nitride layer with a thickness of 10nm.
6. detector as claimed in claim 1 or 2 further includes monocrystalline substrate (1) and metallic mirror (4), the metal
Reflecting mirror (4) is located at the inside of the monocrystalline substrate (1)；
The bridge floor of the detector is combined with the metallic mirror (4) forms 1/4 wavelength resonant cavity.
7. detector as claimed in claim 6, the monocrystalline substrate (1) is the monocrystalline silicon thickness substrate of 200 μ m thicks.
8. detector as claimed in claim 6, the metallic mirror (4) is made of an aluminium reflecting layer.
9. detector as claimed in claim 6, the monocrystalline substrate (1) is " U " font structure；It is arranged in the vanadium oxide
Thermosensitive film (6) is directly connected with the monocrystalline substrate (1) towards the silicon nitride layer on the inside of the resonant cavity.
10. detector as claimed in claim 9, the first electrode (3), which is mounted in, is set to the vanadium oxide thermosensitive film
(6) towards on the silicon nitride layer on the inside of the resonant cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822133226.5U CN209387132U (en) | 2018-12-18 | 2018-12-18 | A kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822133226.5U CN209387132U (en) | 2018-12-18 | 2018-12-18 | A kind of highly sensitive Terahertz single point detector based on vanadium oxide phase-change characteristic |
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| CN209387132U true CN209387132U (en) | 2019-09-13 |
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