CN113130671A - Silicon heterojunction solar cell and preparation method thereof - Google Patents
Silicon heterojunction solar cell and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 155
- 229910052802 copper Inorganic materials 0.000 claims abstract description 155
- 239000010949 copper Substances 0.000 claims abstract description 155
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 43
- 238000009713 electroplating Methods 0.000 claims description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 13
- 238000000059 patterning Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon heterojunction solar cell and a preparation method thereof. The silicon heterojunction solar cell comprises: the substrate is provided with a front surface and a back surface which are oppositely arranged; a copper thin film electrode disposed on one side of the entire back surface; the patterned copper grid electrode is arranged on one side of the front surface. Compared with the front electrode and the back electrode which are both patterned copper grid line electrodes, the back electrode is a copper film electrode on the whole surface, and the back electrode is not required to be patterned, so that the process flows of patterning the back electrode and the like and the use of a photoetching mask can be saved, the manufacturing cost of the copper electrode is effectively reduced, and the integral preparation cost of the silicon heterojunction solar cell is further reduced; moreover, the whole copper thin film electrode can effectively reduce the series resistance of the solar cell, thereby improving the efficiency of the solar cell.
Description
Technical Field
The invention relates to the technical field of silicon heterojunction solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof.
Background
Different from the conventional crystalline silicon cell, the silicon heterojunction solar cell is formed by depositing an amorphous silicon film on a crystalline silicon wafer substrate to form a pn heterojunction, and the forming temperature of the amorphous silicon film determines the highest preparation process temperature of the cell, and is usually about 200 ℃. In order to meet the requirement of low-temperature preparation, the silicon heterojunction solar cell also needs a low-temperature process and low-temperature slurry in the aspect of preparation of metal electrodes. At present, the metal electrodes of the silicon heterojunction solar cell mainly have two types: one is a silver electrode formed by screen printing of low-temperature silver paste, and the contact performance between the silver electrode and a TCO (transparent conductive oxide) film is to be improved due to the high price of metal silver; the other is a copper electrode, which is usually formed by electroplating or the like, the conductivity of the metal copper is equivalent to that of silver, but the price of copper is low, and the electroplating copper process is expected to further improve the aspect ratio of the electrode, and is an electrode technology actively developed in the industry at present.
The electroplated copper grid line is applied to the silicon heterojunction solar cell, the problem that the traditional silver paste cannot be prepared at a low temperature is solved, and compared with the screen printing low-temperature silver paste, the electroplated copper grid line has the advantages of improving conversion efficiency and reducing production cost. However, the manufacturing cost of the silicon heterojunction solar cell with the copper electrode is still higher at present.
Therefore, research on silicon heterojunction solar cells is awaited.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a low-cost silicon heterojunction solar cell.
In one aspect of the invention, a silicon heterojunction solar cell is provided. According to an embodiment of the present invention, the silicon heterojunction solar cell includes: a substrate having a front side and a back side disposed opposite; a copper thin film electrode disposed on one side of the entire back surface; the patterned copper grid line electrode is arranged on one side of the front surface. Compared with the front electrode and the back electrode which are both patterned copper grid line electrodes, the back electrode is a copper film electrode on the whole surface, and the back electrode is not required to be patterned, so that the process flows of patterning the back electrode and the like and the use of a photoetching mask can be saved, the manufacturing cost of the copper electrode is effectively reduced, and the overall preparation cost of the silicon heterojunction solar cell is further reduced; moreover, the whole copper thin film electrode can effectively reduce the series resistance of the solar cell, thereby improving the efficiency of the solar cell.
According to an embodiment of the present invention, the silicon heterojunction solar cell further comprises: the patterned first copper seed layer is arranged on the front surface, and the copper grid line electrode is arranged on the surface, far away from the base material, of the first copper seed layer; the second copper seed layer is arranged on the whole back surface, and the copper film electrode is arranged on the whole surface, far away from the base material, of the second copper seed layer.
According to the embodiment of the invention, the thickness of the copper thin film electrode is 5-45 micrometers.
According to an embodiment of the invention, the substrate comprises: a crystalline silicon substrate; the intrinsic amorphous silicon thin films are arranged on two surfaces of the crystalline silicon substrate which are oppositely arranged; the doped amorphous silicon thin films are arranged on the surfaces of the two intrinsic amorphous silicon thin films far away from the crystalline silicon substrate; the TCO thin films are arranged on the surfaces, far away from the crystalline silicon substrate, of the two doped amorphous silicon thin films.
In another aspect of the present invention, the present invention provides a method for preparing the aforementioned silicon heterojunction solar cell. According to an embodiment of the invention, a method of fabricating a silicon heterojunction solar cell comprises: providing a substrate, wherein the substrate is provided with a front surface and a back surface which are oppositely arranged; and forming a copper film electrode on one side of the whole back surface, and forming a patterned copper grid electrode on one side of the front surface. Compared with the process for preparing the patterned copper grid line electrode on the front side and the back side, the back side electrode is the copper thin film electrode on the whole surface, and the process flows of patterning the back side electrode and the like and the use of a photoetching mask can be saved without patterning the back side electrode, so that the manufacturing cost of the copper electrode is effectively reduced, and the integral preparation cost of the silicon heterojunction solar cell is further reduced; moreover, the whole copper thin film electrode can effectively reduce the series resistance of the solar cell, thereby improving the efficiency of the solar cell.
According to an embodiment of the present invention, the method of fabricating a silicon heterojunction solar cell further comprises: depositing and forming a whole first copper seed layer on the front surface, and depositing and forming a second copper seed layer on the whole back surface; photoetching the surface of the whole first copper seed layer, which is far away from the substrate, to form a patterned mask; and electroplating to form the copper film electrode on the whole surface of the second copper seed layer far away from the base material, and electroplating to form the copper grid electrode on the surface of the first copper seed layer which is not covered by the mask.
According to an embodiment of the present invention, in the electroplating, the plating solution includes CuSO4And an additive, wherein Cu2+The concentration of the electroplating solution is 15-80 g/L, and the electroplating time is 15-60 minutes.
According to an embodiment of the present invention, after forming the copper thin-film electrode and the copper gate electrode, the method further includes: removing the mask; and removing the part of the whole layer of the first copper seed layer which is not covered by the copper grid line electrode to obtain a first copper seed layer, and exposing the surface of the TCO film in the base material which is not covered by the copper grid line electrode.
Drawings
Fig. 1 is a schematic structural diagram of a silicon heterojunction solar cell in an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a silicon heterojunction solar cell in another embodiment of the invention.
Fig. 3 is a schematic structural diagram of a silicon heterojunction solar cell in yet another embodiment of the invention.
Fig. 4 is a schematic structural diagram of a substrate in a silicon heterojunction solar cell in an embodiment of the invention.
Fig. 5 is a schematic structural diagram of a silicon heterojunction solar cell prepared in another embodiment of the invention.
Fig. 6 is a schematic structural diagram of a silicon heterojunction solar cell prepared in yet another embodiment of the invention.
Fig. 7 is a schematic structural view of the silicon heterojunction solar cell in comparative example 1.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In one aspect of the invention, a silicon heterojunction solar cell is provided. According to an embodiment of the present invention, referring to fig. 1, the silicon heterojunction solar cell includes: a substrate 10, the substrate 10 having a front surface 10A and a back surface 10B oppositely disposed; a copper thin-film electrode 20, the copper thin-film electrode 20 being provided on one side of the entire back surface 10B; and a patterned copper grid electrode 30, the copper grid electrode 30 being disposed on one side of the front surface 10A. Compared with the front electrode and the back electrode which are both patterned copper grid line electrodes, the back electrode is the whole copper film electrode 20, and the back electrode is not required to be patterned, so that the process flows of patterning the back electrode and the like and the use of a photoetching mask can be saved, the manufacturing cost of the copper electrode is effectively reduced, and the integral preparation cost of the silicon heterojunction solar cell is further reduced; moreover, the whole copper thin film electrode 20 can effectively reduce the series resistance of the solar cell, effectively improve the fill factor of the solar cell, and further improve the efficiency of the solar cell, or greatly reduce the cost for manufacturing the solar cell on the premise of keeping the good efficiency of the solar cell.
According to an embodiment of the present invention, referring to fig. 2, the substrate 10 includes: a crystalline silicon substrate 11; intrinsic amorphous silicon thin films 12 (including an intrinsic amorphous silicon thin film 12a and an intrinsic amorphous silicon thin film 12b), the intrinsic amorphous silicon thin films 12 being disposed on both surfaces of the crystalline silicon substrate 11 disposed opposite to each other; the doped amorphous silicon thin films 13 (including a doped amorphous silicon thin film 13a and a doped amorphous silicon thin film 13b) are arranged on the surfaces of the two intrinsic amorphous silicon thin films 12 far away from the crystalline silicon substrate 11; the TCO film 14 (including the TCO film 14a and the TCO film 14b), and the TCO film 14 is arranged on the surfaces of the two doped amorphous silicon films 13 far away from the crystalline silicon substrate 11.
The conductive type of the crystalline silicon substrate 11 has no special requirement, and those skilled in the art can flexibly select the conductive type according to actual requirements, for example, the crystalline silicon substrate is an N-type monocrystalline silicon wafer; furthermore, the crystalline silicon substrate can be an N-type monocrystalline silicon wafer with a pyramid textured structure. Therefore, the service performance of the silicon heterojunction solar cell can be further improved.
One of the doped amorphous silicon thin film 13a and the doped amorphous silicon thin film 13b is an N-type doped amorphous silicon thin film, and the other is a P-type doped amorphous silicon thin film, which can be flexibly set by a person skilled in the art according to actual conditions. In some embodiments, the doped amorphous silicon thin film 13a is a doped P-type amorphous silicon emitter layer, the doped amorphous silicon thin film 13b is a doped N-type amorphous silicon back field layer, and the doped N-type amorphous silicon back field layer is located on the back surface of the silicon heterojunction solar cell. Therefore, the performance requirements of the silicon heterojunction solar cell can be effectively met.
The materials of the TCO films 14a and 14b are not particularly limited, and those skilled in the art can flexibly select the materials according to actual needs. In embodiments of the present invention, the materials forming the TCO film 14a and the TCO film 14b each independently include, but are not limited to, doped indium oxide doped with at least one of tin, tungsten, molybdenum, titanium, gallium, zinc, and the like, such as Indium Tin Oxide (ITO), indium tungsten oxide, indium titanium oxide, aluminum zinc oxide. Therefore, the material has good conductivity, good interface performance with the doped amorphous silicon thin film and the copper electrode, good light transmittance and low resistivity, and is further beneficial to improving the cell performance of the silicon heterojunction solar cell.
According to the embodiment of the invention, the thickness of the copper thin film electrode is 5-45 micrometers, such as 5 micrometers, 10 micrometers, 15 micrometers, 20 micrometers, 25 micrometers, 30 micrometers, 35 micrometers, 40 micrometers or 45 micrometers, so that the copper thin film electrode has better electrical performance due to reduction of series resistance. The thickness of the copper grid line electrode is also 5-45 micrometers, and therefore the copper grid line electrode has good electrical performance.
Further, the specific pattern shape of the patterned copper grid electrode 30 has no special requirement, and the field can be flexibly designed and selected according to the requirements of practical situations such as light transmittance of the copper grid electrode and the front surface of the solar cell, and the requirements are not limited herein.
According to an embodiment of the present invention, referring to fig. 3, the silicon heterojunction solar cell further includes: a patterned first copper seed layer 40, the first copper seed layer 40 being disposed on the front side (i.e., the surface of the TCO film 14a in fig. 3 and 2), and the copper grid electrode 30 being disposed on the surface of the first copper seed layer 40 away from the substrate 10; a second copper seed layer 50, the second copper seed layer 50 being disposed on the entire back surface (i.e., the surface of the TCO film 14b in FIGS. 3 and 2), and the copper film electrode 20 being disposed on the entire surface of the second copper seed layer 50 away from the substrate. Thus, the copper thin-film electrode 20 and the copper gate electrode 30 are prepared by the arrangement of the first copper seed layer 40 and the second copper seed layer 50 so as to be electroplated.
The thicknesses of the first copper seed layer 40 and the second copper seed layer 50 are 70-150 nm, such as 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, or 150 nm, respectively. Thus, the first copper seed layer 40 and the second copper seed layer 50 having the above thicknesses contribute to the formation of the copper gate electrode 30 and the copper thin film electrode 20 having a desired thickness by electroplating.
In another aspect of the present invention, the present invention provides a method for preparing the aforementioned silicon heterojunction solar cell. According to an embodiment of the invention, a method of fabricating a silicon heterojunction solar cell comprises:
s100: a substrate 10 is provided, the substrate 10 having a front side 10A and a back side 10B disposed opposite.
Further, referring to fig. 4, the substrate 10 includes: a crystalline silicon substrate 11; intrinsic amorphous silicon thin films 12 (including an intrinsic amorphous silicon thin film 12a and an intrinsic amorphous silicon thin film 12b), the intrinsic amorphous silicon thin films 12 being disposed on both surfaces of the crystalline silicon substrate 11 disposed opposite to each other; the doped amorphous silicon thin films 13 (including a doped amorphous silicon thin film 13a and a doped amorphous silicon thin film 13b) are arranged on the surfaces of the two intrinsic amorphous silicon thin films 12 far away from the crystalline silicon substrate 11; the TCO film 14 (including the TCO film 14a and the TCO film 14b), the TCO film 14 is disposed on the surfaces of the two doped amorphous silicon films 13 far away from the crystalline silicon substrate 11, and the structural schematic diagram refers to FIG. 2.
The intrinsic amorphous silicon thin film 12 and the doped amorphous silicon thin film 13 can be prepared by a PECVD (plasma enhanced chemical vapor deposition) process, and the TCO thin film 14 can be prepared by a PVD (physical vapor deposition) process, wherein the processes are mature, the industrial production is facilitated, and the prepared thin films have good performance. Wherein, the specific process conditions of PVD and PECVD have no special requirements, and the preparation is carried out according to the preparation process conditions in the prior art.
According to an embodiment of the present invention, referring to fig. 5, the method of manufacturing a silicon heterojunction solar cell further includes:
s110: the entire first copper seed layer 41 is deposited on the front side (i.e., the surface of the TCO film 14a away from the substrate in FIG. 4) and the entire second copper seed layer 50 is deposited on the back side (i.e., the surface of the TCO film 14b away from the substrate in FIG. 4).
The specific deposition process of the whole first copper seed layer 41 and the whole second copper seed layer 50 may be PVD, the process of the method is mature, the industrial production is facilitated, the prepared copper seed layer has uniform thickness and good performance, in some examples, in the PVD process, the power density is 15-40W/cm, and the air pressure is 0.3-0.6 Pa.
S120: and photoetching and forming a patterned mask 60 on the surface of the whole first copper seed layer 41 far away from the substrate, specifically: a complete layer of dry film mask is applied to the surface of the first copper seed layer 41 remote from the substrate, followed by photolithography to obtain a patterned mask 60.
S200: a copper thin-film electrode 20 is formed on the entire rear surface 10B side, and a patterned copper gate electrode 30 is formed on the front surface 10A side.
In some embodiments, referring to fig. 6, a copper thin film electrode 20 is formed by electroplating on the entire surface of the second copper seed layer 50 away from the substrate, and a copper gate electrode 30 is formed by electroplating on the entire surface of the first copper seed layer 41 not covered by the mask 60. Specifically, the semi-finished product (the structure of fig. 5) formed with the mask 60 is immersed in the plating solution for a certain time, so that the copper grid electrode and the copper thin film electrode can be obtained by electroplating deposition on the surfaces of the second copper seed layer 50 and the entire first copper seed layer 41 not covered by the mask 60.
According to an embodiment of the present invention, in the electroplating, the electroplating solution includes CuSO4And an additive, wherein Cu2+The concentration of (a) is 15-80 g/L (such as 15g/L, 20g/L, 25g/L, 30g/L, 35g/L, 38g/L, 40g/L, 42g/L, 45g/L, 48g/L, 50g/L, 53g/L, 55g/L, 58g/L, 60g/L, 65g/L, 70g/L, 75g/L, 80 g/L), and the plating time is 15-60 minutes (such as 15 minutes, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 60 minutes). Therefore, under the above conditions, the electroplating deposition is facilitated to quickly and uniformly obtain the copper grid electrode and the copper thin film electrode with uniform thickness and good performance on the surfaces of the second copper seed layer 50 and the whole first copper seed layer 41 which is not covered by the mask 60.
According to the embodiment of the present invention, after the copper thin film electrode and the copper gate electrode are formed, the method further includes step S300: the mask 60 is removed; removing the whole first copper seed layer part not covered by the copper grid line electrode 30 to obtain a first copper seed layer 40, and exposing the surface of the TCO film 14a in the substrate not covered by the copper grid line electrode 30, with reference to fig. 3 for a schematic structural diagram.
The specific method for removing the mask 60 has no special requirement, and those skilled in the art can flexibly design the mask according to the actual situations such as the specific material of the mask, and the like, and thus, the detailed description is omitted here.
Further, a specific method for removing the whole first copper seed layer portion not covered by the copper grid electrode 30 may be to perform etching by using an acid solution, so as to obtain a silicon heterojunction solar cell with a desired structure.
According to the embodiment of the invention, compared with the process for preparing the patterned copper grid line electrode on the front side and the back side, the back side electrode is the copper thin film electrode on the whole surface, and the patterning of the back side electrode is not needed, so that the process flows of patterning the back side electrode and the like and the use of a photoetching mask can be saved, the manufacturing cost of the copper electrode is effectively reduced, and the integral preparation cost of silicon heterojunction solar electricity is further reduced; moreover, the whole copper thin film electrode can effectively reduce the series resistance of the solar cell, thereby improving the efficiency of the solar cell.
Examples
Example 1
The method for preparing the silicon heterojunction solar cell (the structural schematic diagram of the silicon heterojunction solar cell refers to fig. 3) comprises the following steps:
(1) cleaning and texturing an N-type crystalline silicon substrate 11;
(2) sequentially depositing an intrinsic amorphous silicon thin film 12 and a doped amorphous silicon thin film 13 on two opposite surfaces of a crystalline silicon substrate 11 through PECVD respectively;
(3) depositing TCO films 14 on the surfaces of the front-side and back-side doped amorphous silicon films 13 through PVD respectively;
(4) forming a whole first copper seed layer 41 on the surface of the front TCO film 14a by PVD deposition, and forming a second copper seed layer 50 on the surface of the back TCO film 14b by PVD deposition;
(5) coating a dry film on the surface of the whole first copper seed layer 41, and photoetching to form a patterned mask 60;
(6) immersing the sample obtained in the step (5) into an electroplating solution containing copper sulfate, and depositing to obtain a copper grid electrode 30 and a copper thin film electrode 20;
(7) the mask 60 is removed;
(8) and (5) immersing the sample obtained in the step (7) into an acid solution to remove the whole copper seed layer part which is not covered by the copper grid line electrode, so as to obtain a first copper seed layer 40, and obtain the silicon heterojunction solar cell.
The thicknesses of the first copper seed layer and the second copper seed layer are respectively 90 nanometers, the thicknesses of the copper film electrode and the copper grid electrode are respectively (30 +/-2) micrometers, and the concentration of copper ions in the electroplating solution is 55 g/L.
Comparative example 1
The method for preparing the silicon heterojunction solar cell (the structural schematic diagram of the silicon heterojunction solar cell refers to fig. 7) comprises the following steps:
the steps (1) to (4) are the same as the step of the embodiment 1;
(5) coating dry films on the surfaces of the whole first copper seed layer and the whole second copper seed layer, and photoetching to form a patterned mask;
(6) immersing the sample obtained in the step (5) into a copper sulfate-containing electroplating solution, and depositing to obtain a first copper grid electrode 31 and a copper grid electrode 32 with the average thickness and height of (30 +/-2) micrometers respectively, wherein the electroplating solution and the electroplating conditions are the same as those in the example 1;
(7) removing the mask;
(8) and (5) immersing the sample obtained in the step (7) in an acid solution to remove the copper seed layer which is not covered by the copper grid electrode, so as to obtain a patterned first copper seed layer 42 and a patterned second copper seed layer 52, and obtain the silicon heterojunction solar cell.
The performances of the silicon heterojunction solar cells obtained in example 1 and comparative example 1 were tested, and the test results are as follows:
the solar cell in example 1 had an open circuit voltage of 738.6mV and a short circuit current density of 38.03mA/cm2The fill factor was 80.42%, the cell efficiency was 22.59%;
the solar cell in comparative example 1 had an open circuit voltage of 738.6mV and a short circuit current density of 38.07mA/cm2The fill factor was 80.07% and the cell efficiency was 22.51%.
Therefore, the solar cell in the embodiment 1 not only effectively ensures good filling factor and cell efficiency of the solar cell on the premise of effectively reducing the manufacturing cost, but also improves the filling factor and the cell efficiency compared with the comparative example 1.
The terms "first" and "second" are used herein for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (8)
1. A silicon heterojunction solar cell, comprising:
a substrate having a front side and a back side disposed opposite;
a copper thin film electrode disposed on one side of the entire back surface;
the patterned copper grid line electrode is arranged on one side of the front surface.
2. The silicon heterojunction solar cell of claim 1, further comprising:
the patterned first copper seed layer is arranged on the front surface, and the copper grid line electrode is arranged on the surface, far away from the base material, of the first copper seed layer;
the second copper seed layer is arranged on the whole back surface, and the copper film electrode is arranged on the whole surface, far away from the base material, of the second copper seed layer.
3. The silicon heterojunction solar cell according to claim 1 or 2, wherein the thickness of the copper thin film electrode is 5 to 45 μm.
4. The silicon heterojunction solar cell of claim 1, wherein the substrate comprises:
a crystalline silicon substrate;
the intrinsic amorphous silicon thin films are arranged on two surfaces of the crystalline silicon substrate which are oppositely arranged;
the doped amorphous silicon thin films are arranged on the surfaces of the two intrinsic amorphous silicon thin films far away from the crystalline silicon substrate;
the TCO thin films are arranged on the surfaces, far away from the crystalline silicon substrate, of the two doped amorphous silicon thin films.
5. A method for preparing the silicon heterojunction solar cell as claimed in claims 1 to 4, comprising:
providing a substrate, wherein the substrate is provided with a front surface and a back surface which are oppositely arranged;
and forming a copper film electrode on one side of the whole back surface, and forming a patterned copper grid electrode on one side of the front surface.
6. The method of claim 5, further comprising:
depositing and forming a whole first copper seed layer on the front surface, and depositing and forming a second copper seed layer on the whole back surface;
photoetching the surface of the whole first copper seed layer, which is far away from the substrate, to form a patterned mask;
and electroplating to form the copper film electrode on the whole surface of the second copper seed layer far away from the base material, and electroplating to form the copper grid electrode on the surface of the whole layer of the first copper seed layer which is not covered by the mask.
7. The method as claimed in claim 5 or 6, wherein, in the electroplating, the electroplating solution comprises CuSO4And an additive, wherein Cu2+The concentration of the electroplating solution is 15-80 g/L, and the electroplating time is 15-60 minutes.
8. The method of claim 6, further comprising, after forming the copper thin-film electrode and the copper gate electrode:
removing the mask;
and removing the part of the whole layer of the first copper seed layer which is not covered by the copper grid line electrode to obtain a first copper seed layer, and exposing the surface of the TCO film in the base material which is not covered by the copper grid line electrode.
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