WO2024031958A1 - Solar cell, production device therefor, and copper seed layer coating process and apparatus - Google Patents

Solar cell, production device therefor, and copper seed layer coating process and apparatus Download PDF

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Publication number
WO2024031958A1
WO2024031958A1 PCT/CN2023/077892 CN2023077892W WO2024031958A1 WO 2024031958 A1 WO2024031958 A1 WO 2024031958A1 CN 2023077892 W CN2023077892 W CN 2023077892W WO 2024031958 A1 WO2024031958 A1 WO 2024031958A1
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WO
WIPO (PCT)
Prior art keywords
cooling
chamber
substrate
seed layer
copper seed
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PCT/CN2023/077892
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French (fr)
Chinese (zh)
Inventor
王陈
任民鑫
张成虎
章伟冠
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通威太阳能（安徽）有限公司
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Publication of WO2024031958A1 publication Critical patent/WO2024031958A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials

Definitions

  • the present application relates to the field of battery technology, and in particular to a solar cell and its production equipment, a copper seed layer coating process and a coating device.
  • the PVD (Physical Vapor Deposition) process is performed to deposit the conductive film, and then the electrodes are made by screen printing.
  • silver paste needs to be used. Since silver paste is expensive, the production cost of solar cells is high.
  • the copper seed layer is deposited after the PVD process is completed to make the electrode. Specifically, the PVD process and the deposition of the copper seed layer are completed in the chamber. During this process, the amorphous silicon film layer is easily damaged, resulting in unqualified product quality. Moreover, the deposition of the conductive film and the deposition of the copper seed layer will cause Mutual influence will also have an impact on product quality.
  • a copper seed layer plating process including the following steps:
  • the first substrate that has completed the first cooling treatment is deposited with a copper seed layer in a second process chamber to obtain a first finished product.
  • the step of completing the first cooling treatment of the first substrate in the first cooling chamber includes:
  • the first substrate is subjected to at least two stages of first cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a first preset temperature value.
  • the step of subjecting the first substrate to at least two stages of first cooling treatment includes:
  • the first substrate is sequentially sent into at least two first cooling sub-cavities for cooling, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity is greater than that of the previous one.
  • the cooling power of the first cooling sub-cavity is greater than that of the previous one.
  • the method further includes: performing a transport process on the first substrate.
  • the step of transporting the first substrate includes: transporting the first substrate after completing the first cooling process.
  • the method further includes:
  • the first substrate that has completed the first cooling process is subjected to a first buffering process in the first buffering chamber.
  • a copper seed layer is deposited on the first substrate in the second process chamber to obtain the first finished product.
  • the method further includes: completing a second cooling process on the first substrate in a second cooling chamber.
  • the step of completing the second cooling treatment of the first substrate in the second cooling chamber includes:
  • the first substrate is subjected to at least two stages of second cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a second preset temperature value.
  • the step of subjecting the first substrate to at least two stages of second cooling treatment includes:
  • the first substrate is sent into at least two second cooling sub-cavities in sequence for cooling, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity is greater than that of the previous one.
  • the cooling power of the second cooling sub-cavity is greater than that of the previous one.
  • the method further includes: The first substrate is subjected to a second caching process in a second caching chamber.
  • the method further includes:
  • the first finished product is subjected to a third cooling process in a third cooling chamber.
  • the step of completing the third cooling treatment of the first finished product in the third cooling chamber includes:
  • the first finished product is subjected to at least two stages of a third cooling process, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first finished product is reduced to a third preset temperature value.
  • the step of subjecting the first finished product to at least two stages of third cooling treatment includes:
  • the first finished product is sent into at least two third cooling sub-cavities in sequence for cooling, and along the conveying direction of the first finished product, the cooling power of the latter third cooling sub-cavity is greater than that of the previous one.
  • the cooling power of the third cooling sub-cavity is greater than that of the previous one.
  • the method further includes:
  • the first finished product that has completed the third cooling process is subjected to a third buffering process in a third buffering chamber.
  • the step of completing the deposition of the conductive film in the first process chamber to obtain the first substrate includes:
  • the component to be coated is first passed through the first isolation area, and then a conductive film is deposited on the component to be coated in the first coating area to obtain the first substrate.
  • the step of depositing a copper seed layer on the first substrate after the first cooling process in the second process chamber to obtain the first finished product includes:
  • the first substrate on which the copper seed layer has been deposited on one surface is passed through the second isolation area, and then the copper seed layer is deposited on the other surface of the front and back surfaces of the first substrate, thereby obtaining the first finished product.
  • a solar cell which is produced by adopting the copper seed layer plating process.
  • a copper seed layer plating device including:
  • a first process chamber, the first process chamber is used to complete the deposition of the conductive film to obtain the first substrate;
  • a first cooling chamber the first cooling chamber is used to complete the first cooling process of the first substrate, and the first cooling chamber is connected with the first process chamber;
  • a second process chamber the second process chamber is used to deposit a copper seed layer on the first substrate after the first cooling process to obtain the first finished product, and the second process chamber is connected to the first substrate.
  • the first cooling chamber is connected.
  • the first cooling chamber includes at least two interconnected first cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity is greater than The cooling power of the previous first cooling sub-cavity.
  • the copper seed layer plating device further includes a transfer mechanism, the transfer mechanism is disposed between the first cooling chamber and the second process chamber, and the transfer mechanism is used to The first substrate is transported.
  • the copper seed layer plating device further includes a first cache chamber, and the first cache chamber is When performing the first caching process on the first substrate, the first caching chamber is disposed between the first cooling chamber and the transfer mechanism, and the first caching chamber and the first caching chamber are The cooling chamber is connected.
  • the copper seed layer coating device further includes a second cooling chamber, the second cooling chamber is used to perform a second cooling process on the first substrate, and the second cooling chamber is configured between the second process chamber and the transfer mechanism, and the second cooling chamber is connected with the second process chamber.
  • the second cooling chamber includes at least two interconnected second cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity is greater than The cooling power of the previous second cooling sub-cavity.
  • the copper seed layer plating device further includes a second cache chamber, the second cache chamber is used to perform a second cache process on the first substrate, and the second cache chamber is configured between the second cooling chamber and the transfer mechanism, and the second buffer chamber is connected to the second cooling chamber.
  • the copper seed layer coating device further includes a third cooling chamber, the third cooling chamber is used to complete a third cooling process on the first finished product, and the third cooling chamber is connected to the third cooling chamber.
  • the second process chamber is connected.
  • the third cooling chamber includes at least two interconnected third cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter third cooling sub-cavity is greater than The cooling power of the previous third cooling sub-cavity.
  • the copper seed layer plating device further includes a third cache chamber, the third cache chamber is used to perform a third cache process on the first finished product, and the third cache chamber is configured On one side of the third cooling chamber, the third buffer chamber is connected with the third cooling chamber.
  • the first process chamber includes a first isolation area and a first coating area that are connected to each other, and the first coating area is located close to the first cooling chamber relative to the first isolation area. , and the first coating area is connected with the first cooling chamber.
  • the second process chamber includes a second coating area, a second isolation area, and a third coating area, and the second isolation area is located between the second coating area and the third coating area. space, and the second coating area and the third coating area are both connected to the second isolation area, and the second coating area is connected to the first cooling chamber and is used to clean the front side of the first substrate.
  • the copper seed layer is deposited on one surface of the back surface, and the third plating area is used to deposit the copper seed layer on the other surface of the front surface and the back surface of the first substrate.
  • a solar cell production equipment including the copper seed layer coating device.
  • Figure 1 is a schematic structural diagram of a copper seed layer plating device according to an embodiment
  • Figure 2 is a schematic structural diagram of a copper seed layer plating device according to another embodiment.
  • a solar cell production equipment including a copper seed layer plating device.
  • the copper seed layer plating device can be used to deposit the copper seed layer, which will not cause any damage to non-metallic cells.
  • the crystalline silicon film layer causes damage, and the deposition of the conductive film and the deposition of the copper seed layer will not affect each other, ensuring product quality.
  • a copper seed layer plating device includes a first process chamber 100 , a first cooling chamber 200 and a second process chamber 300 .
  • the first process chamber 100 is used to complete the deposition of the conductive film to obtain the first substrate.
  • the parts to be coated that have completed the deposition of the amorphous silicon film layer are sent into the first process chamber 100, and magnetron sputtering or other methods are used to deposit the conductive film in the first process chamber 100.
  • the first matrix is obtained.
  • the conductive film may be an ITO (Indium tin oxide) film layer.
  • the first process chamber 100 may be any conventional equipment capable of conducting conductive film deposition.
  • the first cooling chamber 200 is disposed at the next process position of the first process chamber 100 , and the first cooling chamber 200 200 is in phase with the first process chamber 100 Interconnection, that is, first obtain the first substrate in the first process chamber 100, and then send the first substrate into the first cooling chamber 200, so that the first cooling chamber 200 is used to complete the first cooling of the first substrate Processing, thereby reducing the temperature of the first substrate to a first preset temperature value.
  • the temperature of the first substrate in the first cooling chamber 200 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the first cooling chamber 200
  • the temperature of the first substrate in the first cooling chamber 200 can be cooled by using methods such as , compressed air, etc., and the temperature of the first substrate in the first cooling chamber 200 can also be cooled by using a cold trap.
  • the first preset temperature value can be flexibly designed or adjusted according to actual process requirements, for example, it can be below 60°C.
  • the second process chamber 300 is arranged at the next process position of the first cooling chamber 200, and the second process chamber 300 and the first cooling chamber 200 are connected to each other, that is, first A first cooling process is performed on the first substrate in the first cooling chamber 200, and then the first substrate that has completed the first cooling process is sent into the second process chamber 300, so that the second process chamber 300 is used to perform the first cooling process on the first substrate.
  • a copper seed layer is deposited on a substrate to obtain a first finished product.
  • the second process chamber 300 may be any traditional equipment capable of depositing a copper seed layer.
  • the traditional method is to complete the deposition of the conductive film and the deposition of the copper seed layer in one chamber, so that the deposition of the conductive film and the deposition of the copper seed layer will interact with each other; moreover, the carrier needs to be replaced after the deposition of the conductive film is completed.
  • Depositing the copper seed layer is extremely complex and reduces production efficiency; moreover, the deposition of the conductive film needs to be performed at a higher temperature, and due to the chemical properties of copper, the deposition of the copper seed layer needs to be performed at a lower temperature. When the temperature is higher than 200°C, the amorphous silicon film layer will be destroyed and the quality will be unqualified; at the same time, frequent heating and cooling in a chamber will have an irreversible impact on the electrochemical temperature performance of the film layer.
  • the conductive film is first deposited in the first process chamber 100 to obtain the first substrate, and then the first substrate is subjected to a sufficient first cooling process in the first cooling chamber 200 , thereby reducing the temperature of the first substrate to the first preset temperature value, and then completing the deposition of the copper seed layer on the first substrate after completing the first cooling process in the second process chamber 300, which not only makes the conductive film
  • the deposition and the deposition of the copper seed layer ensuring the deposition quality of the conductive film and the deposition quality of the copper seed layer; moreover, the deposition of the conductive film and the deposition of the copper seed layer do not require changing the carrier, and the processing is simple and It is convenient and improves production efficiency; and, after completing the deposition of the conductive film at a higher temperature in the first process chamber 100, a sufficient first cooling process is performed in the first cooling chamber 200, and finally in the second process
  • the deposition of the copper seed layer is completed in the chamber
  • the first cooling chamber 200 includes at least two interconnected first cooling sub-chambers 210 , and, along the conveying direction of the first substrate, the latter first cooling chamber
  • the cooling power of the sub-cavity 210 is greater than the cooling power of the previous first cooling sub-cavity 210 .
  • at least two stages of the first cooling process can be performed on the first substrate, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first substrate gradually decreases to the first preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
  • the first substrate is sequentially sent into at least two first cooling sub-cavities 210 for cooling, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity 210 is greater than that of the previous one.
  • the cooling power of the first cooling sub-cavity 210 can achieve progressive cooling and lowering of the first substrate, so that the temperature of the first substrate gradually decreases to the first preset temperature value.
  • the copper seed layer plating device also includes a transfer mechanism 500 .
  • the transfer mechanism 500 is disposed between the first cooling chamber 200 and the second process chamber 300.
  • the transfer mechanism 500 can be used to transfer the first substrate, for example, when only the completed conductive film needs to be obtained When the first substrate is the first substrate, the transfer mechanism 500 can be used to unload.
  • the transfer mechanism 500 can also be used to load the first substrate, so that the first substrate enters the second process chamber 300 for deposition of the copper seed layer.
  • the first cooling chamber 200 is used to perform the first cooling process on the first substrate, and then the transfer mechanism 500 is used to perform the transfer process.
  • the temperature of the first substrate is prevented from being too high and exposed to the air, thereby affecting the quality of the film layer.
  • the transfer mechanism 500 may be a traditional plate-type coating unloading automatic connection machine or other traditional devices capable of loading and unloading the first substrate.
  • the copper seed layer plating device further includes a first cache chamber 400 , and the first cache chamber 400 can be used to perform a first cache process on the first substrate.
  • the first buffer chamber 400 is disposed between the first cooling chamber 200 and the transfer mechanism 500 , and the first buffer chamber 400 is connected with the first cooling chamber 200 .
  • the abnormal first substrate can be cached in the first cache chamber 400 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the first buffer chamber 400 can also be used to buffer the first substrate that cannot be unloaded in the future to avoid damage caused by congestion or collision during the transportation process, so that the production line can be reliable and Stable operation. Furthermore, performing the first cooling process on the first substrate before caching can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the first cooling sub-cavities 210 .
  • the first cache chamber 400 may be a device having a storage space.
  • the copper seed layer plating device further includes a second cooling chamber 600 , so that the second cooling chamber 600 can be used to perform a second cooling process on the first substrate.
  • the second cooling chamber 600 is disposed between the second process chamber 300 and the transfer mechanism 500 , and the second cooling chamber 600 is connected with the second process chamber 300 .
  • the first substrate loaded from the transfer mechanism 500 can be subjected to the second cooling process, so that the temperature of the first substrate is reduced to the second preset temperature value, without damaging the amorphous silicon film layer, ensuring that the product quality.
  • the second cooling chamber 600 is used to further perform a second cooling process on the first substrate that has completed the first cooling process.
  • the cooling effect is better, and the copper seeds are processed
  • the deposition of the layer can more effectively avoid damage to the amorphous silicon film layer.
  • the second preset temperature value can be flexibly designed or adjusted according to actual process requirements, for example, it can be below 60°C.
  • the temperature of the first substrate in the second cooling chamber 600 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the second cooling chamber 600
  • the first substrate in the second cooling chamber 600 can be cooled by using methods such as , compressed air, etc., or the first substrate in the second cooling chamber 600 can be cooled by using a cold trap.
  • the second cooling chamber 600 includes at least two second cooling sub-chambers 610 that communicate with each other, and along the conveying direction of the first substrate, the latter second cooling chamber 610
  • the cooling power of the sub-cavity 610 is greater than the cooling power of the previous second cooling sub-cavity 610 .
  • at least two stages of the second cooling process can be performed on the first base body, so that the cooling power of the later stage is greater than the cooling power of the previous stage, until the temperature of the first base body gradually decreases to the second preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
  • the first substrate is sequentially sent into at least two second cooling sub-cavities 610 for cooling, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity 610 is greater than that of the previous one.
  • the cooling power of the second cooling sub-cavity 610 can achieve progressive cooling and lowering of the first substrate, so that the temperature of the first substrate gradually decreases to the second preset temperature value.
  • the copper seed layer plating device further includes a second cache chamber 700 , and the second cache chamber 700 can be used to perform a second cache process on the first substrate.
  • the second buffer chamber 700 is disposed between the second cooling chamber 600 and the transfer mechanism 500 , and the second buffer chamber 700 is connected with the second cooling chamber 600 .
  • the abnormal first substrate can be cached in the second cache chamber 700 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the second cache chamber 700 can also be used to deposit copper seed layers in the future.
  • the first matrix is cached to avoid damage caused by congestion or collision during the transportation process, so that the production line can operate reliably and stably. Moreover, caching the first substrate first and then performing the second cooling process can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the second cooling sub-cavities 610 .
  • the second cache chamber 700 may be a device having a storage space.
  • the copper seed layer coating device further includes a third cooling chamber 800 , and the third cooling chamber 800 can be used to complete the third cooling process on the first finished product.
  • the third cooling chamber 800 is disposed at the next process position of the second process chamber 300, and the third cooling chamber 800 is connected with the second process chamber 300.
  • the third cooling chamber 800 is used to perform the third step on the first finished product. The cooling process reduces the temperature of the first finished product to the third preset temperature value, thereby preventing the first finished product from being directly exposed to the air and being oxidized.
  • the third preset temperature value can be flexibly designed or adjusted according to actual process requirements, as long as it can prevent the copper seed layer from being oxidized by air.
  • the temperature of the first finished product in the third cooling chamber 800 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the third cooling chamber 800
  • the first finished product in the third cooling chamber 800 can be cooled down by using methods such as , compressed air, etc., and the first finished product in the third cooling chamber 800 can also be cooled down through a cold trap.
  • the third cooling chamber 800 includes at least two interconnected third cooling sub-chambers 810, and, along the conveying direction of the first finished product, the latter third cooling chamber
  • the cooling power of the sub-cavity 810 is greater than the cooling power of the previous third cooling sub-cavity 810 .
  • at least two stages of the third cooling process can be performed on the first finished product, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first finished product gradually decreases to the third preset temperature value, not only It can ensure the cooling effect of the first finished product and avoid the impact on the film layer due to too fast cooling.
  • the first finished product is sequentially sent into at least two third cooling sub-cavities 810 for cooling, and along the conveying direction of the first finished product, the cooling power of the latter third cooling sub-cavity 810 is greater than that of the previous one.
  • the cooling power of the third cooling sub-chamber 810 can achieve progressive cooling and lowering of the first finished product, so that the temperature of the first finished product gradually decreases to the third preset temperature value.
  • the copper seed layer plating device further includes a third buffer chamber 900 , and the third buffer chamber 900 can be used to perform a third buffer process on the first finished product.
  • the third cache chamber 900 is disposed on one side of the third cooling chamber 800 , that is, the third cache chamber 900 is located at the next process position of the third cooling chamber 800 , and the third cache chamber 900 is connected to the third cooling chamber 800 .
  • Three cooling chambers 800 are connected.
  • the abnormal first finished product can be cached in the third cache chamber 900 after completing the third cooling process to avoid This avoids downtime due to abnormalities, allowing the production line to run smoothly and improving production efficiency; in addition, first performing the third cooling process on the first finished product and then caching can also avoid air cross-flow between the third cooling chambers 810 .
  • the third cache chamber 900 may be a device with storage space.
  • the first process chamber 100 includes a first isolation area 110 and a first coating area 120 that are connected to each other.
  • the first coating area 120 is disposed close to the first cooling chamber 200 relative to the first isolation area 110 , and the first coating area 120 is connected to the first cooling chamber 200 . Since the parts to be coated that have completed the deposition of the amorphous silicon film layer need to be heated before entering the first process chamber 100 for deposition of the conductive film to ensure the deposition effect of the conductive film, the parts to be coated enter the first process chamber. After entering the chamber 100, the parts to be coated first pass through the first isolation area 110 and then pass through the first coating area 120, and a conductive film is deposited on the parts to be coated to obtain the first substrate.
  • the first isolation area 110 can be used to isolate the thermal radiation generated by heating. Avoid affecting the deposition of conductive films and ensure the deposition effect of conductive films.
  • the conductive film deposited on the part to be coated in the first coating area 120 can be carried out by traditional magnetron sputtering.
  • the copper seed layer coating device further includes a heating chamber 1000 , and the heating chamber 1000 can be used to heat the parts to be coated.
  • the heating chamber 1000 is disposed at a previous process position of the first process chamber 100, and the heating chamber 1000 is connected with the first process chamber 100.
  • the part to be coated can be preheated so that the temperature of the part to be coated rises to the fourth preset temperature value, so that the part to be coated meets the deposition requirements of the conductive film and ensures the deposition quality of the conductive film.
  • the fourth preset temperature value can be flexibly designed or adjusted according to actual process requirements, as long as it can promote the deposition of the conductive film.
  • the parts to be coated in the heating chamber 1000 can be heated by electric heating or other means.
  • the heating chamber 1000 includes at least two interconnected heating sub-cavities 1100 , and the heating chamber 1000 includes at least two interconnected heating sub-chambers 1100 along the conveying direction of the parts to be coated (direction A in FIGS. 1 and 2 As shown), the heating power of the latter heating sub-cavity 1100 is greater than the heating power of the previous heating sub-cavity 1100.
  • the parts to be coated can be heated in at least two stages, so that the heating power of the latter stage is greater than the heating power of the previous stage, until the temperature of the parts to be coated gradually rises to the fourth preset temperature value, which not only ensures that the parts to be coated are
  • the heating effect of coated parts can also avoid the impact on the film layer due to excessive heating.
  • the parts to be coated are sequentially sent into at least two heating sub-chambers 1100 for heating, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-cavity 1100 is greater than that of the previous heating sub-chamber 1100
  • the heating power can realize progressive heating of the parts to be coated, so that the temperature of the parts to be coated gradually rises to the fourth preset temperature value.
  • the copper seed layer plating device further includes a fourth cache chamber 2000.
  • the four-buffer chamber 2000 can perform a fourth buffering process on the parts to be coated.
  • the fourth cache chamber 2000 is disposed on one side of the heating chamber 1000, that is, the fourth cache chamber 2000 is located at the previous process position of the heating chamber 1000, and the fourth cache chamber 2000 is connected with the heating chamber 1000. .
  • the parts to be coated can be cached in the fourth cache chamber 2000 to avoid shutdowns caused by abnormalities, allowing the production line to run smoothly and improving production efficiency;
  • gas cross-flow between heating sub-chambers 1100 can also be avoided.
  • the fourth cache chamber 2000 may be a device with storage space.
  • the second process chamber 300 includes a second coating area 310 , a second isolation area 320 and a third coating area 330 .
  • the second isolation area 320 is located between the second coating area 310 and the third coating area 330, and both the second coating area 310 and the third coating area 330 are connected with the second isolation area 320.
  • the second coating area 310 Communicated with the first cooling chamber 200 and used to deposit a copper seed layer on one of the front and back surfaces of the first substrate, the third coating area 330 is used to deposit the copper seed layer on the other surface of the front and back surfaces of the first substrate. Complete deposition of the copper seed layer.
  • the first substrate that has completed the first cooling process after the first substrate that has completed the first cooling process enters the second process chamber 300, it first enters the second coating area 310 and in the second coating area 310, one of the front and back surfaces of the first substrate is The copper seed layer is deposited on one surface, and then the first substrate on which the copper seed layer is deposited on one surface passes through the second isolation area 320 , and then the first substrate on which the copper seed layer is deposited on one surface enters the third plating film. area 330, and in the third coating area 330, the deposition of the copper seed layer on the other surface of the front surface and the back surface is completed. With this arrangement, the first substrate that has undergone the first cooling process completes the copper seed layer deposition on one surface in the second coating area 310.
  • the temperature of the first substrate is appropriate, the deposition effect can be ensured. Since the temperature of the first substrate will rise during the deposition of a surface copper seed layer in the second coating area 310, the first substrate is cooled by first passing through the second isolation area 320, and then entering the third coating area. 330 performs copper seed layer deposition on another surface, which can effectively ensure the deposition quality of the third coating area 330 and improve product quality.
  • the depositing of the copper seed layer on the first substrate in the second coating area 310 and the third coating area 330 can be performed using traditional magnetron sputtering.
  • the copper seed layer coating device also includes a residual gas analysis element.
  • the residual gas analysis element is used to monitor and analyze water vapor and other gases in the second process chamber 300 to better control the deposition effect of the copper seed layer.
  • the residual gas analysis component can be a traditional residual gas analyzer and other instruments.
  • a copper seed layer plating process including the following steps:
  • the fourth cache chamber 2000 is disposed on one side of the heating chamber 1000 , that is, the fourth cache chamber 2000 is located at the previous process position of the heating chamber 1000 , and the fourth cache chamber 2000 is connected to the heating chamber 1000 . Chambers 1000 are connected. In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the parts to be coated can be cached in the fourth buffer. It is stored in the chamber 2000 to avoid downtime due to abnormalities, allowing the production line to run smoothly and improving production efficiency; and it can also avoid gas cross-flow between each heating sub-cavity 1100.
  • the heating chamber 1000 is disposed at a previous process position of the first process chamber 100, and the heating chamber 1000 is in communication with the first process chamber 100.
  • the part to be coated can be preheated so that the temperature of the part to be coated rises to the fourth preset temperature value, so that the part to be coated meets the deposition requirements of the conductive film and ensures the deposition quality of the conductive film.
  • the part to be coated is subjected to at least two stages of heating treatment, and the heating power of the latter stage is greater than the heating power of the previous stage until the temperature of the part to be coated rises to the first Four preset temperature values.
  • the heating chamber 1000 includes at least two interconnected heating sub-chambers 1100, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-chamber 1100 is greater than the heating power of the previous heating sub-chamber 1100. power.
  • the parts to be coated can be heated in at least two stages, so that the heating power of the latter stage is greater than the heating power of the previous stage, until the temperature of the parts to be coated gradually rises to the fourth preset temperature value, which not only ensures that the parts to be coated are
  • the heating effect of coated parts can also avoid the impact on the film layer due to excessive heating.
  • the parts to be coated are sequentially sent into at least two heating sub-chambers 1100 for heating, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-cavity 1100 is The heating power is greater than the heating power of the previous heating sub-chamber 1100, so that the parts to be coated can be progressively heated, so that the temperature of the parts to be coated gradually rises to the fourth preset temperature value.
  • the parts to be coated that have been deposited with the amorphous silicon film layer are sent into the first process chamber 100, and a conductive film is deposited in the first process chamber 100 by magnetron sputtering or other methods.
  • the first matrix is obtained.
  • S300 includes S310, where the object to be coated first passes through the first isolation area 110 and then a conductive film is deposited on the object to be coated in the first coating area 120 to obtain the first substrate. Since the parts to be coated that have completed the deposition of the amorphous silicon film layer need to be heated before entering the first process chamber 100 for deposition of the conductive film to ensure the deposition effect of the conductive film, the parts to be coated enter the first process chamber. After entering the chamber 100, the parts to be coated first pass through the first isolation area 110 and then pass through the first coating area 120, and a conductive film is deposited on the parts to be coated to obtain the first substrate.
  • the first isolation area 110 can be used to isolate the thermal radiation generated by heating. Avoid affecting the deposition of conductive films and ensure the deposition effect of conductive films.
  • the first substrate is first obtained in the first process chamber 100, and then the first substrate is sent to the first cold
  • the first cooling chamber 200 is used to complete the first cooling process on the first substrate, thereby reducing the temperature of the first substrate to the first preset temperature value.
  • S400 includes S410, subjecting the first substrate to at least two stages of first cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate decreases. to the first preset temperature value.
  • the first cooling chamber 200 includes at least two interconnected first cooling sub-cavities 210 , and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity 210 is greater than that of the previous one.
  • the cooling power of the first cooling sub-chamber 210 In this way, at least two stages of the first cooling process can be performed on the first substrate, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first substrate gradually decreases to the first preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
  • the first substrate is sequentially sent into at least two first cooling sub-cavities 210 for cooling, and along the conveying direction of the first substrate, the next first cooling sub-cavity
  • the cooling power of 210 is greater than the cooling power of the previous first cooling sub-cavity 210 . In this way, progressive cooling of the first substrate can be achieved, so that the temperature of the first substrate gradually decreases to the first preset temperature value.
  • the first cache chamber 400 is disposed between the first cooling chamber 200 and the transfer mechanism 500 , and the first cache chamber 400 communicates with the first cooling chamber 200 .
  • the first buffer chamber 400 can also be used to buffer the first substrate that cannot be unloaded in the future to avoid damage caused by congestion or collision during the transportation process, so that the production line can be reliable and Stable operation.
  • performing the first cooling process on the first substrate before caching can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the first cooling sub-cavities 210 .
  • the transfer mechanism 500 is disposed between the first cooling chamber 200 and the second process chamber 300. According to actual production requirements, the transfer mechanism 500 can be used to transfer the first substrate, for example, when only When the first substrate of the completed conductive film is obtained, the transfer mechanism 500 can be used for unloading. Of course, the transfer mechanism 500 can also be used to load the first substrate, so that the first substrate enters the second process chamber 300 for deposition of the copper seed layer.
  • S600 includes S610, transferring the first substrate after completing the first cooling process.
  • the first cooling chamber is utilized The chamber 200 performs the first cooling process on the first substrate and then uses the transfer mechanism 500 to perform transfer processing to realize unloading, so as to avoid the temperature of the first substrate being too high and being exposed to the air to affect the quality of the film layer.
  • the second cache chamber 700 is disposed between the second cooling chamber 600 and the transfer mechanism 500 , and the second cache chamber 700 communicates with the second cooling chamber 600 .
  • the abnormal first substrate can be cached in the second cache chamber 700 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the second cache chamber 700 can also be used to cache the first substrate that will not have time to deposit the copper seed layer in the future to avoid damage caused by congestion or collision during the transportation process, which makes the production line Able to operate reliably and stably.
  • caching the first substrate first and then performing the second cooling process can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the second cooling sub-cavities 610 .
  • the second cooling chamber 600 is disposed between the second process chamber 300 and the transfer mechanism 500 , and the second cooling chamber 600 communicates with the second process chamber 300 .
  • the first substrate loaded from the transfer mechanism 500 can be subjected to the second cooling process, so that the temperature of the first substrate is reduced to the second preset temperature value, without damaging the amorphous silicon film layer, ensuring that the product quality.
  • the second cooling chamber 600 is used to further perform a second cooling process on the first substrate that has completed the first cooling process. The cooling effect is better, and the copper seeds are processed The deposition of the layer can more effectively avoid damage to the amorphous silicon film layer.
  • S800 includes S810, subjecting the first substrate to at least two stages of second cooling, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate decreases. to the second preset temperature value.
  • the second cooling chamber 600 includes at least two interconnected second cooling sub-cavities 610, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity 610 is greater than that of the previous one.
  • the cooling power of the second cooling sub-chamber 610 In this way, at least two stages of the second cooling process can be performed on the first base body, so that the cooling power of the later stage is greater than the cooling power of the previous stage, until the temperature of the first base body gradually decreases to the second preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
  • the first substrate is sequentially sent into at least two second cooling sub-cavities 610 for sequential cooling, and along the conveying direction of the first substrate, the latter second cooling sub-cavity
  • the cooling power of 610 is greater than the cooling power of the previous second cooling sub-cavity 610 . In this way, progressive cooling of the first substrate can be achieved, so that the temperature of the first substrate gradually decreases to the second preset temperature value.
  • a first cooling process is performed on the first substrate in the first cooling chamber 200, and then the first substrate that has completed the first cooling process is sent into the second process chamber 300, thereby utilizing the first cooling process.
  • the second process chamber 300 deposits a copper seed layer on the first substrate to obtain a first finished product.
  • S900 includes S910, first completing the deposition of a copper seed layer on one of the front and back surfaces of the first substrate; S920, completing the deposition of the copper seed layer on one surface of the first substrate. After passing through the second isolation area 320, a copper seed layer is deposited on the other surface of the front and back surfaces of the first substrate, thereby obtaining the first finished product. In this way, after the first substrate that has completed the first cooling process enters the second process chamber 300, it first enters the second coating area 310, and in the second coating area 310, copper is completed on one of the front and back surfaces of the first substrate.
  • the seed layer is deposited, and then the first substrate with the copper seed layer deposited on one surface passed through the second isolation area 320, and then the first substrate with the copper seed layer deposited on one surface entered the third plating area 330 and then The third plating area 330 completes the deposition of the copper seed layer on the other surface of the front surface and the back surface.
  • the first substrate that has undergone the first cooling process completes the copper seed layer deposition on one surface in the second coating area 310. Since the temperature of the first substrate is appropriate, the deposition effect can be ensured. Since the temperature of the first substrate will rise during the deposition of a surface copper seed layer in the second coating area 310, the first substrate is cooled by first passing through the second isolation area 320, and then entering the third coating area. 330 performs copper seed layer deposition on another surface, which can effectively ensure the deposition quality of the third coating area 330 and improve product quality.
  • the third cooling chamber 800 is disposed at the next process position of the second process chamber 300 , and the third cooling chamber 800 is connected with the second process chamber 300 .
  • the third cooling chamber 800 is used to perform the third step on the first finished product. The cooling process reduces the temperature of the first finished product to the third preset temperature value, thereby preventing the first finished product from being directly exposed to the air and being oxidized.
  • S1000 includes S1100, subjecting the first finished product to at least two stages of a third cooling process, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first finished product decreases. to the third preset temperature value.
  • the third cooling chamber 800 includes at least two interconnected third cooling sub-chambers 810, and along the conveying direction of the first finished product (as shown in direction A in Figures 1 and 2),
  • the cooling power of a third cooling sub-cavity 810 is greater than the cooling power of the previous third cooling sub-cavity 810 .
  • at least two stages of the third cooling process can be performed on the first finished product, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first finished product gradually decreases to the third preset temperature value, not only It can ensure the cooling effect of the first finished product and avoid Prevent the film from being affected by cooling too quickly.
  • the first finished product is sequentially sent into at least two third cooling sub-chambers 810 for sequential cooling, and along the conveying direction of the first finished product, the last third cooling sub-cavity
  • the cooling power of 810 is greater than the cooling power of the previous third cooling sub-cavity 810 . In this way, progressive cooling can be achieved for the first finished product, so that the temperature of the first finished product gradually decreases to the third preset temperature value.
  • the first finished product that has completed the third cooling process is subjected to the third buffering process in the third buffering chamber 900.
  • the third cache chamber 900 is disposed on one side of the third cooling chamber 800 , that is, the third cache chamber 900 is located at the next process position of the third cooling chamber 800 , and the third cache chamber 900 is located at the next process position of the third cooling chamber 800 .
  • Chamber 900 communicates with third cooling chamber 800.
  • the abnormal first finished product can be cached in the third cache chamber 900 after completing the third cooling process, thereby avoiding downtime caused by the abnormality and causing the production line to It can operate smoothly and improve production efficiency; and, by first performing the third cooling process on the first finished product and then caching, it can also avoid air cross-flow between the third cooling sub-cavities 810 .
  • the copper seed layer plating process of the above embodiment has at least the following advantages: 1. First, complete the deposition of the conductive film in the first process chamber 100 to obtain the first substrate, and then place the first substrate in the first cooling chamber. A sufficient first cooling process is performed in 200 to reduce the temperature of the first substrate to a first preset temperature value, and then the first substrate after the first cooling process is completed with copper seeds in the second process chamber 300 The deposition of the conductive film not only prevents the deposition of the conductive film from interfering with the deposition of the copper seed layer, but also ensures the deposition quality of the conductive film and the deposition quality of the copper seed layer. 2.
  • the deposition of the conductive film and the copper seed layer does not require changing the carrier, the processing is simple and convenient, and the production efficiency is improved. 3. After completing the deposition of the conductive film at a higher temperature in the first process chamber 100, perform a sufficient first cooling process in the first cooling chamber 200, and finally complete the copper seeds in the second process chamber 300 The deposition of layers will not damage the amorphous silicon film layer and ensure product quality. 4. Complete the deposition of the conductive film at a higher temperature in the first process chamber 100, and complete the deposition of the copper seed layer at a lower temperature in the second process chamber 300, which will not affect the electrochemistry of the film layer. Temperature performance has an irreversible impact, ensuring product quality.
  • a solar cell is also provided, which is manufactured by adopting the copper seed layer plating process of any of the above embodiments.
  • the conductive film is first deposited in the first process chamber 100 to obtain the first substrate, and then the first substrate is fully cooled in the first cooling chamber 200 Processing, thereby reducing the temperature of the first substrate to a first preset temperature value, and then completing the deposition of a copper seed layer on the first substrate after completing the first cooling process in the second process chamber 300, not only making the conductive film
  • the deposition of the conductive film and the deposition of the copper seed layer ensuring the deposition quality of the conductive film and the deposition quality of the copper seed layer; moreover, the deposition of the conductive film and the deposition of the copper seed layer do not require changing the carrier, and the processing is simple , convenience, improved production efficiency; and, in the first After completing the deposition of the conductive film at a higher temperature in the first process chamber 100, a sufficient first cooling process is performed in the first cooling chamber 200, and finally the deposition of the copper seed layer is completed in the second process chamber 300
  • the amorphous silicon film layer will not be damaged, ensuring product quality; at the same time, the deposition of the conductive film is completed in the first process chamber 100 at a higher temperature, and the copper seeds are completed in the second process chamber 300 at a lower temperature. The deposition of the film layer will not have an irreversible impact on the electrochemical temperature performance of the film layer, ensuring product quality.
  • a certain body and “a certain part” can be part of the corresponding “component”, that is, “a certain body” and “a certain part” are integrally formed with the “other parts of the component”; they can also be integrated with the “component”
  • An independent component that can be separated from “other parts”, that is, “a certain body” or “a certain part” can be manufactured independently, and then combined with “other parts of the component” to form a whole.
  • the expressions "a certain body” and “a certain part” mentioned above in this application are only one of the embodiments. They are for the convenience of reading and are not intended to limit the scope of protection of this application. As long as the above features are included and the functions are the same, it should be understood as The equivalent technical solution of this application.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.
  • connection In this application, unless otherwise clearly stated and limited, the terms “installation”, “connection”, “connection”, “fixing” and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated into one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interactive relationship between two elements, unless otherwise specified limitations. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
  • a first feature “on” or “below” a second feature may be a third feature.
  • the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediary.
  • the terms “above”, “above” and “above” the first feature is above the second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature.
  • "Below”, “below” and “beneath” the first feature to the second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature has a smaller horizontal height than the second feature.
  • an element when an element is referred to as being “fixed to”, “disposed on”, “anchored to” or “mounted on” another element, it can be directly on the other element or intervening elements may also be present. . When an element is said to be “connected” to another element, it can be directly connected to the other element or there may also be intervening elements present. Furthermore, when one element is considered to be a "fixed transmission connection” to another element, the two can be fixed in a detachable connection, or they can be fixed in a non-detachable connection, as long as they can realize power transmission, such as socket and snap connection. , integrated molding fixation, welding, etc. can be realized in the existing technology, and will not be redundant here.
  • connection relationship or positional relationship of elements although not explicitly described, the connection relationship and positional relationship are interpreted to include an error range, which error range should be acceptable for a specific value determined by a person skilled in the art. within the deviation range. For example, “about,” “approximately,” or “substantially” may mean within one or more standard deviations, without limitation.

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Abstract

A solar cell production device and a copper seed layer coating process and apparatus. Deposition of a conductive thin film is first completed in a first process chamber (100) to obtain a first base body; then, the first base body is fully subjected to first cooling treatment in a first cooling chamber (200), so that the first base body is cooled to a first preset temperature value; and a copper seed layer is deposited on the first base body subjected to the first cooling treatment in a second process chamber (300), so that the deposition of the conductive thin film and deposition of the copper seed layer do not affect each other, thereby ensuring the deposition quality of the conductive thin film and the deposition quality of the copper seed layer. Moreover, the deposition of the conductive thin film and the deposition of the copper seed layer do not require carrier replacement, so that the processing is simple and convenient, and the production efficiency is improved. In addition, an amorphous silicon film layer is not damaged, so that the quality of a product is ensured.

Description

太阳电池及其生产设备、铜种子层镀膜工艺及镀膜装置Solar cells and their production equipment, copper seed layer coating process and coating equipment
相关申请Related applications
本申请要求2022年08月09申请的，申请号为2022109588121，名称为“太阳电池及其生产设备、铜种子层镀膜工艺及镀膜装置”的中国专利申请的优先权，在此将其全文引入作为参考。This application claims priority to the Chinese patent application filed on August 9, 2022, with application number 2022109588121 and titled "Solar Cells and Production Equipment, Copper Seed Layer Coating Process and Coating Device", the full text of which is hereby incorporated as refer to.
技术领域Technical field
本申请涉及电池技术领域，特别是涉及一种太阳电池及其生产设备、铜种子层镀膜工艺及镀膜装置。The present application relates to the field of battery technology, and in particular to a solar cell and its production equipment, a copper seed layer coating process and a coating device.
背景技术Background technique
太阳电池在生产时，完成非晶硅膜层的沉积后再进行PVD(Physical Vapor Deposition，物理气相沉积)工艺进行导电薄膜的沉积，接着采用丝网印刷的方式制作电极。在丝网印刷过程中，需要使用到银浆，由于银浆价格昂贵，导致太阳电池的生产成本较高。为了降低太阳能电池的生产成本，完成PVD工艺后再进行铜种子层的沉积以进行电极的制作。具体地，在腔室内完成PVD工艺以及铜种子层的沉积，在此过程中，非晶硅膜层易遭到破坏而造成产品品质不合格，并且，导电薄膜的沉积以及铜种子层的沉积会产生相互影响，也会对产品品质造成影响。During the production of solar cells, after completing the deposition of the amorphous silicon film layer, the PVD (Physical Vapor Deposition) process is performed to deposit the conductive film, and then the electrodes are made by screen printing. In the screen printing process, silver paste needs to be used. Since silver paste is expensive, the production cost of solar cells is high. In order to reduce the production cost of solar cells, the copper seed layer is deposited after the PVD process is completed to make the electrode. Specifically, the PVD process and the deposition of the copper seed layer are completed in the chamber. During this process, the amorphous silicon film layer is easily damaged, resulting in unqualified product quality. Moreover, the deposition of the conductive film and the deposition of the copper seed layer will cause Mutual influence will also have an impact on product quality.
发明内容Contents of the invention
根据本申请的各自实施例，一方面，提供了一种铜种子层镀膜工艺，包括以下步骤：According to respective embodiments of the present application, on the one hand, a copper seed layer plating process is provided, including the following steps:
在第一工艺腔室内完成导电薄膜的沉积以得到第一基体；Complete the deposition of the conductive film in the first process chamber to obtain the first substrate;
将所述第一基体在第一冷却腔室内完成第一冷却处理；Complete the first cooling treatment of the first substrate in the first cooling chamber;
将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品。The first substrate that has completed the first cooling treatment is deposited with a copper seed layer in a second process chamber to obtain a first finished product.
在一个实施例中，在将所述第一基体在第一冷却腔室内完成第一冷却处理的步骤中，包括：In one embodiment, the step of completing the first cooling treatment of the first substrate in the first cooling chamber includes:
将所述第一基体进行至少两个阶段的第一冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一基体的温度降低至第一预设温度值。 The first substrate is subjected to at least two stages of first cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a first preset temperature value.
在一个实施例中，将所述第一基体进行至少两个阶段的第一冷却处理的步骤中，包括：In one embodiment, the step of subjecting the first substrate to at least two stages of first cooling treatment includes:
将所述第一基体依次送入至少两个第一冷却分腔内先后进行冷却，且沿所述第一基体的输送方向，后一个所述第一冷却分腔的冷却功率大于前一个所述第一冷却分腔的冷却功率。The first substrate is sequentially sent into at least two first cooling sub-cavities for cooling, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity is greater than that of the previous one. The cooling power of the first cooling sub-cavity.
在一个实施例中，在第一工艺腔室内完成导电薄膜的沉积以得到第一基体步骤之后，将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之前，还包括：对所述第一基体进行转运处理。In one embodiment, after completing the deposition of the conductive film in the first process chamber to obtain the first substrate, the first substrate after the first cooling treatment is completed in the second process chamber to complete the deposition of the copper seed layer. Before the step of obtaining the first finished product, the method further includes: performing a transport process on the first substrate.
在一个实施例中，在对所述第一基体进行转运处理的步骤中，包括：将完成第一冷却处理后的所述第一基体进行转运处理。In one embodiment, the step of transporting the first substrate includes: transporting the first substrate after completing the first cooling process.
在一个实施例中，将所述第一基体在第一冷却腔室内完成第一冷却处理步骤之后，对所述第一基体进行转运处理步骤之前，还包括：In one embodiment, after completing the first cooling treatment step of the first substrate in the first cooling chamber and before performing the transfer treatment step on the first substrate, the method further includes:
将完成第一冷却处理后的所述第一基体在第一缓存腔室内进行第一缓存处理。The first substrate that has completed the first cooling process is subjected to a first buffering process in the first buffering chamber.
在一个实施例中，将完成第一冷却处理后的所述第一基体进行转运处理的步骤之后，在所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之前，还包括：将所述第一基体在第二冷却腔室内完成第二冷却处理。In one embodiment, after the step of transporting the first substrate after the first cooling process, a copper seed layer is deposited on the first substrate in the second process chamber to obtain the first finished product. Before the step, the method further includes: completing a second cooling process on the first substrate in a second cooling chamber.
在一个实施例中，在将所述第一基体在第二冷却腔室内完成第二冷却处理的步骤中，包括：In one embodiment, the step of completing the second cooling treatment of the first substrate in the second cooling chamber includes:
将所述第一基体进行至少两个阶段的第二冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一基体的温度降低至第二预设温度值。The first substrate is subjected to at least two stages of second cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a second preset temperature value.
在一个实施例中，将所述第一基体进行至少两个阶段的第二冷却处理的步骤中，包括：In one embodiment, the step of subjecting the first substrate to at least two stages of second cooling treatment includes:
将所述第一基体依次送入至少两个第二冷却分腔内依次进行冷却，且沿所述第一基体的输送方向，后一个所述第二冷却分腔的冷却功率大于前一个所述第二冷却分腔的冷却功率。The first substrate is sent into at least two second cooling sub-cavities in sequence for cooling, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity is greater than that of the previous one. The cooling power of the second cooling sub-cavity.
在一个实施例中，将完成第一冷却处理后的所述第一基体进行转运处理的步骤之后，将所述第一基体在第二冷却腔室内完成第二冷却处理的步骤之前，还包括：将所述第一基体在第二缓存腔室内进行第二缓存处理。In one embodiment, after the step of transferring the first substrate after the first cooling treatment and before the step of completing the second cooling treatment of the first substrate in the second cooling chamber, the method further includes: The first substrate is subjected to a second caching process in a second caching chamber.
在一个实施例中，将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之后，还包括：In one embodiment, after the step of depositing a copper seed layer on the first substrate after the first cooling process in the second process chamber to obtain the first finished product, the method further includes:
将所述第一成品在第三冷却腔室内完成第三冷却处理。The first finished product is subjected to a third cooling process in a third cooling chamber.
在一个实施例中，在将所述第一成品在第三冷却腔室内完成第三冷却处理的步骤中，包括： In one embodiment, the step of completing the third cooling treatment of the first finished product in the third cooling chamber includes:
将所述第一成品进行至少两个阶段的第三冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一成品的温度降低至第三预设温度值。The first finished product is subjected to at least two stages of a third cooling process, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first finished product is reduced to a third preset temperature value.
在一个实施例中，将所述第一成品进行至少两个阶段的第三冷却处理的步骤中，包括：In one embodiment, the step of subjecting the first finished product to at least two stages of third cooling treatment includes:
将所述第一成品依次送入至少两个第三冷却分腔内依次进行冷却，且沿所述第一成品的输送方向，后一个所述第三冷却分腔的冷却功率大于前一个所述第三冷却分腔的冷却功率。The first finished product is sent into at least two third cooling sub-cavities in sequence for cooling, and along the conveying direction of the first finished product, the cooling power of the latter third cooling sub-cavity is greater than that of the previous one. The cooling power of the third cooling sub-cavity.
在一个实施例中，在将所述第一成品在第三冷却腔室内完成第三冷却处理的步骤之后，还包括：In one embodiment, after completing the third cooling process of the first finished product in the third cooling chamber, the method further includes:
将完成第三冷却处理的所述第一成品在第三缓存腔室内进行第三缓存处理。The first finished product that has completed the third cooling process is subjected to a third buffering process in a third buffering chamber.
在一个实施例中，在第一工艺腔室内完成导电薄膜的沉积以得到第一基体的步骤中，包括：In one embodiment, the step of completing the deposition of the conductive film in the first process chamber to obtain the first substrate includes:
使待镀膜件先经过第一隔离区后再在第一镀膜区对所述待镀膜件沉积导电薄膜以得到第一基体。The component to be coated is first passed through the first isolation area, and then a conductive film is deposited on the component to be coated in the first coating area to obtain the first substrate.
在一个实施例中，将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤中，包括：In one embodiment, the step of depositing a copper seed layer on the first substrate after the first cooling process in the second process chamber to obtain the first finished product includes:
先对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积；First, complete the deposition of the copper seed layer on one of the front and back surfaces of the first substrate;
使得完成了一个表面的铜种子层沉积的第一基体经过第二隔离区，再对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积，从而得到所述第一成品。The first substrate on which the copper seed layer has been deposited on one surface is passed through the second isolation area, and then the copper seed layer is deposited on the other surface of the front and back surfaces of the first substrate, thereby obtaining the first finished product.
本申请的另一方面，提供了一种太阳电池，采取所述的铜种子层镀膜工艺制得。In another aspect of the present application, a solar cell is provided, which is produced by adopting the copper seed layer plating process.
本申请的再一方面，提供了一种铜种子层镀膜装置，包括：In yet another aspect of the present application, a copper seed layer plating device is provided, including:
第一工艺腔室，所述第一工艺腔室用于完成导电薄膜的沉积以得到第一基体；A first process chamber, the first process chamber is used to complete the deposition of the conductive film to obtain the first substrate;
第一冷却腔室，所述第一冷却腔室用于对所述第一基体完成第一冷却处理，且所述第一冷却腔室与所述第一工艺腔室连通；及A first cooling chamber, the first cooling chamber is used to complete the first cooling process of the first substrate, and the first cooling chamber is connected with the first process chamber; and
第二工艺腔室，所述第二工艺腔室用于将完成第一冷却处理后的所述第一基体完成铜种子层的沉积以得到第一成品，且所述第二工艺腔室与所述第一冷却腔室连通。A second process chamber, the second process chamber is used to deposit a copper seed layer on the first substrate after the first cooling process to obtain the first finished product, and the second process chamber is connected to the first substrate. The first cooling chamber is connected.
在一个实施例中，所述第一冷却腔室包括至少两个相互连通的第一冷却分腔，且沿所述第一基体的输送方向，后一个所述第一冷却分腔的冷却功率大于前一个所述第一冷却分腔的冷却功率。In one embodiment, the first cooling chamber includes at least two interconnected first cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity is greater than The cooling power of the previous first cooling sub-cavity.
在一个实施例中，所述铜种子层镀膜装置还包括转运机构，所述转运机构设置于所述第一冷却腔室与所述第二工艺腔室之间，所述转运机构用于对所述第一基体进行转运处理。In one embodiment, the copper seed layer plating device further includes a transfer mechanism, the transfer mechanism is disposed between the first cooling chamber and the second process chamber, and the transfer mechanism is used to The first substrate is transported.
在一个实施例中，所述铜种子层镀膜装置还包括第一缓存腔室，所述第一缓存腔室用 于对所述第一基体进行第一缓存处理，所述第一缓存腔室设置于所述第一冷却腔室与所述转运机构之间，且所述第一缓存腔室与所述第一冷却腔室连通。In one embodiment, the copper seed layer plating device further includes a first cache chamber, and the first cache chamber is When performing the first caching process on the first substrate, the first caching chamber is disposed between the first cooling chamber and the transfer mechanism, and the first caching chamber and the first caching chamber are The cooling chamber is connected.
在一个实施例中，所述铜种子层镀膜装置还包括第二冷却腔室，所述第二冷却腔室用于对所述第一基体进行第二冷却处理，所述第二冷却腔室设置于所述第二工艺腔室与所述转运机构之间，且所述第二冷却腔室与所述第二工艺腔室连通。In one embodiment, the copper seed layer coating device further includes a second cooling chamber, the second cooling chamber is used to perform a second cooling process on the first substrate, and the second cooling chamber is configured between the second process chamber and the transfer mechanism, and the second cooling chamber is connected with the second process chamber.
在一个实施例中，所述第二冷却腔室包括至少两个相互连通的第二冷却分腔，且沿所述第一基体的输送方向，后一个所述第二冷却分腔的冷却功率大于前一个所述第二冷却分腔的冷却功率。In one embodiment, the second cooling chamber includes at least two interconnected second cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity is greater than The cooling power of the previous second cooling sub-cavity.
在一个实施例中，所述铜种子层镀膜装置还包括第二缓存腔室，所述第二缓存腔室用于对所述第一基体进行第二缓存处理，所述第二缓存腔室设置于所述第二冷却腔室与所述转运机构之间，且所述第二缓存腔室与所述第二冷却腔室连通。In one embodiment, the copper seed layer plating device further includes a second cache chamber, the second cache chamber is used to perform a second cache process on the first substrate, and the second cache chamber is configured between the second cooling chamber and the transfer mechanism, and the second buffer chamber is connected to the second cooling chamber.
在一个实施例中，所述铜种子层镀膜装置还包括第三冷却腔室，所述第三冷却腔室用于对第一成品完成第三冷却处理，且所述第三冷却腔室与所述第二工艺腔室连通。In one embodiment, the copper seed layer coating device further includes a third cooling chamber, the third cooling chamber is used to complete a third cooling process on the first finished product, and the third cooling chamber is connected to the third cooling chamber. The second process chamber is connected.
在一个实施例中，所述第三冷却腔室包括至少两个相互连通的第三冷却分腔，且沿所述第一基体的输送方向，后一个所述第三冷却分腔的冷却功率大于前一个所述第三冷却分腔的冷却功率。In one embodiment, the third cooling chamber includes at least two interconnected third cooling sub-cavities, and along the conveying direction of the first substrate, the cooling power of the latter third cooling sub-cavity is greater than The cooling power of the previous third cooling sub-cavity.
在一个实施例中，所述铜种子层镀膜装置还包括第三缓存腔室，所述第三缓存腔室用于对所述第一成品进行第三缓存处理，所述第三缓存腔室设置于所述第三冷却腔室一侧，且所述第三缓存腔室与所述第三冷却腔室连通。In one embodiment, the copper seed layer plating device further includes a third cache chamber, the third cache chamber is used to perform a third cache process on the first finished product, and the third cache chamber is configured On one side of the third cooling chamber, the third buffer chamber is connected with the third cooling chamber.
在一个实施例中，所述第一工艺腔室包括相互连通的第一隔离区及第一镀膜区，所述第一镀膜区相对于所述第一隔离区靠近所述第一冷却腔室设置，且所述第一镀膜区与所述第一冷却腔室连通。In one embodiment, the first process chamber includes a first isolation area and a first coating area that are connected to each other, and the first coating area is located close to the first cooling chamber relative to the first isolation area. , and the first coating area is connected with the first cooling chamber.
在一个实施例中，所述第二工艺腔室包括第二镀膜区、第二隔离区及第三镀膜区，所述第二隔离区位于所述第二镀膜区与所述第三镀膜区之间，且所述第二镀膜区及所述第三镀膜区均与所述第二隔离区相连通，所述第二镀膜区与所述第一冷却腔室连通并用于对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积，所述第三镀膜区用于对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积。In one embodiment, the second process chamber includes a second coating area, a second isolation area, and a third coating area, and the second isolation area is located between the second coating area and the third coating area. space, and the second coating area and the third coating area are both connected to the second isolation area, and the second coating area is connected to the first cooling chamber and is used to clean the front side of the first substrate The copper seed layer is deposited on one surface of the back surface, and the third plating area is used to deposit the copper seed layer on the other surface of the front surface and the back surface of the first substrate.
本申请的又一方面，提供了一种太阳电池生产设备，包括所述的铜种子层镀膜装置。In another aspect of the present application, a solar cell production equipment is provided, including the copper seed layer coating device.
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。 The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects and advantages of the application will become apparent from the description, drawings and claims.
附图说明Description of drawings
为了更清楚地说明本申请实施例或传统技术中的技术方案，下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据公开的附图获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present application or the traditional technology, the drawings needed to be used in the description of the embodiments or the traditional technology will be briefly introduced below. Obviously, the drawings in the following description are only for the purpose of explaining the embodiments or the technical solutions of the traditional technology. For the embodiments of the application, those of ordinary skill in the art can also obtain other drawings based on the disclosed drawings without exerting creative efforts.
图1为一个实施例的铜种子层镀膜装置的结构示意图；Figure 1 is a schematic structural diagram of a copper seed layer plating device according to an embodiment;
图2为另一个实施例的铜种子层镀膜装置的结构示意图。Figure 2 is a schematic structural diagram of a copper seed layer plating device according to another embodiment.
附图标记说明：
100、第一工艺腔室；110、第一隔离区；120、第一镀膜区；200、第一冷却腔室；210、
第一冷却分腔；300、第二工艺腔室；310、第二镀膜区；320、第二隔离区；330、第三镀膜区；400、第一缓存腔室；500、转运机构；600、第二冷却腔室；610、第二冷却分腔；700、第二缓存腔室；800、第三冷却腔室；810、第三冷却分腔；900、第三缓存腔室；1000、加热腔室；1100、加热分腔；2000、第四缓存腔室。Explanation of reference symbols:
100. The first process chamber; 110. The first isolation area; 120. The first coating area; 200. The first cooling chamber; 210.
The first cooling sub-chamber; 300, the second process chamber; 310, the second coating area; 320, the second isolation area; 330, the third coating area; 400, the first buffer chamber; 500, transfer mechanism; 600. Second cooling chamber; 610, second cooling chamber; 700, second cache chamber; 800, third cooling chamber; 810, third cooling chamber; 900, third cache chamber; 1000, heating chamber chamber; 1100, heating sub-cavity; 2000, fourth cache chamber.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.
在一个实施例中，提供了一种太阳电池生产设备，包括铜种子层镀膜装置，如此，在太阳电池生产过程中，利用铜种子层镀膜装置能够进行铜种子层的沉积，不仅不会对非晶硅膜层造成破坏，而且导电薄膜的沉积与铜种子层的沉积不会相互影响，保证产品品质。In one embodiment, a solar cell production equipment is provided, including a copper seed layer plating device. In this way, during the solar cell production process, the copper seed layer plating device can be used to deposit the copper seed layer, which will not cause any damage to non-metallic cells. The crystalline silicon film layer causes damage, and the deposition of the conductive film and the deposition of the copper seed layer will not affect each other, ensuring product quality.
如图1及图2所示，在一个实施例中在一个实施例中，铜种子层镀膜装置包括第一工艺腔室100、第一冷却腔室200及第二工艺腔室300。As shown in FIGS. 1 and 2 , in one embodiment, a copper seed layer plating device includes a first process chamber 100 , a first cooling chamber 200 and a second process chamber 300 .
其中，第一工艺腔室100用于完成导电薄膜的沉积，从而得到第一基体。在实际生产过程中，将完成了非晶硅膜层沉积的待镀膜件送入第一工艺腔室100内，采取磁控溅射等方式在第一工艺腔室100内进行导电薄膜的沉积，从而得到第一基体。Among them, the first process chamber 100 is used to complete the deposition of the conductive film to obtain the first substrate. In the actual production process, the parts to be coated that have completed the deposition of the amorphous silicon film layer are sent into the first process chamber 100, and magnetron sputtering or other methods are used to deposit the conductive film in the first process chamber 100. Thus, the first matrix is obtained.
其中，导电薄膜可以是ITO(Indium tin oxide，氧化铟锡)膜层。第一工艺腔室100可以是传统的任意一种能够进行导电薄膜沉积的设备。Among them, the conductive film may be an ITO (Indium tin oxide) film layer. The first process chamber 100 may be any conventional equipment capable of conducting conductive film deposition.
其中，沿第一基体的输送方向(如图1及图2的A方向所示)，第一冷却腔室200设置于第一工艺腔室100的下一工序位置，并且，第一冷却腔室200与第一工艺腔室100相 互连通，即先在第一工艺腔室100内得到第一基体，再将第一基体送入第一冷却腔室200内，从而利用第一冷却腔室200对第一基体完成第一冷却处理，进而使得第一基体的温度降低至第一预设温度值。Wherein, along the conveying direction of the first substrate (shown in direction A in FIGS. 1 and 2 ), the first cooling chamber 200 is disposed at the next process position of the first process chamber 100 , and the first cooling chamber 200 200 is in phase with the first process chamber 100 Interconnection, that is, first obtain the first substrate in the first process chamber 100, and then send the first substrate into the first cooling chamber 200, so that the first cooling chamber 200 is used to complete the first cooling of the first substrate Processing, thereby reducing the temperature of the first substrate to a first preset temperature value.
在一个实施例中，可以通过加装冷泵并结合破真空与抽真空的方式对第一冷却腔室200内的第一基体进行降温，也可以向第一冷却腔室200内通入低温氮气、压缩空气等方式对第一冷却腔室200内的第一基体进行降温，还可以通过冷阱的方式对第一冷却腔室200内的第一基体进行降温。In one embodiment, the temperature of the first substrate in the first cooling chamber 200 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the first cooling chamber 200 The temperature of the first substrate in the first cooling chamber 200 can be cooled by using methods such as , compressed air, etc., and the temperature of the first substrate in the first cooling chamber 200 can also be cooled by using a cold trap.
其中，第一预设温度值可以根据实际工艺要求进行灵活的设计或调整，例如可以是60℃以下。The first preset temperature value can be flexibly designed or adjusted according to actual process requirements, for example, it can be below 60°C.
其中，沿第一基体的输送方向，第二工艺腔室300设置于第一冷却腔室200的下一工序位置，并且，第二工艺腔室300与第一冷却腔室200相互连通，即先在第一冷却腔室200内对第一基体进行第一冷却处理，再将完成了第一冷却处理的第一基体送入第二工艺腔室300内，从而利用第二工艺腔室300对第一基体进行铜种子层的沉积，进而得到第一成品。Wherein, along the conveying direction of the first substrate, the second process chamber 300 is arranged at the next process position of the first cooling chamber 200, and the second process chamber 300 and the first cooling chamber 200 are connected to each other, that is, first A first cooling process is performed on the first substrate in the first cooling chamber 200, and then the first substrate that has completed the first cooling process is sent into the second process chamber 300, so that the second process chamber 300 is used to perform the first cooling process on the first substrate. A copper seed layer is deposited on a substrate to obtain a first finished product.
其中，第二工艺腔室300可以是传统的任意一种能够进行铜种子层沉积的设备。The second process chamber 300 may be any traditional equipment capable of depositing a copper seed layer.
可以理解的是，第一基体在各个腔室内的转移，可以通过输送带等输送装置的输送实现，由于其属于传统技术，在此不再赘述。It can be understood that the transfer of the first substrate in each chamber can be realized by transportation by a conveyor device such as a conveyor belt. Since this is a traditional technology, it will not be described again here.
传统的方式为在一个腔室内先后完成导电薄膜的沉积以及铜种子层的沉积，从而使得导电薄膜的沉积以及铜种子层的沉积会产生相互影响；而且，完成导电薄膜的沉积后需要更换载具再进行铜种子层的沉积，操作极为复杂，降低了生产效率；并且，导电薄膜的沉积需要在较高温度下进行，而受到铜的化学性质的影响，铜种子层的沉积需要在较低温度下进行，温度高于200℃时，会破坏非晶硅膜层而造成质量不合格；同时，在一个腔室内频繁的升温和降温，会对膜层的电化学温度性能造成不可逆的影响。The traditional method is to complete the deposition of the conductive film and the deposition of the copper seed layer in one chamber, so that the deposition of the conductive film and the deposition of the copper seed layer will interact with each other; moreover, the carrier needs to be replaced after the deposition of the conductive film is completed. Depositing the copper seed layer is extremely complex and reduces production efficiency; moreover, the deposition of the conductive film needs to be performed at a higher temperature, and due to the chemical properties of copper, the deposition of the copper seed layer needs to be performed at a lower temperature. When the temperature is higher than 200°C, the amorphous silicon film layer will be destroyed and the quality will be unqualified; at the same time, frequent heating and cooling in a chamber will have an irreversible impact on the electrochemical temperature performance of the film layer.
上述实施例的铜种子层镀膜装置，先在第一工艺腔室100内完成导电薄膜的沉积以得到第一基体，然后将第一基体在第一冷却腔室200内进行充分的第一冷却处理，从而使得第一基体的温度降低至第一预设温度值，再将完成了第一冷却处理后的第一基体在第二工艺腔室300内完成铜种子层的沉积，不仅使得导电薄膜的沉积与铜种子层的沉积之间不会产生相互影响，保证导电薄膜的沉积质量以及铜种子层的沉积质量；而且，导电薄膜的沉积与铜种子层的沉积不需更换载具，加工简单、方便，提高了生产效率；并且，在第一工艺腔室100内于较高温度下完成导电薄膜的沉积后，在第一冷却腔室200内进行充分的第一冷却处理，最后在第二工艺腔室300内完成铜种子层的沉积，不会破坏非晶硅膜层，保证产品质量；同时，在第一工艺腔室100内于较高温度下完成导电薄膜的沉积，在第二工 艺腔室300内于较低温度下完成铜种子层的沉积，也不会对膜层的电化学温度性能造成不可逆的影响，保证产品品质。In the copper seed layer plating device of the above embodiment, the conductive film is first deposited in the first process chamber 100 to obtain the first substrate, and then the first substrate is subjected to a sufficient first cooling process in the first cooling chamber 200 , thereby reducing the temperature of the first substrate to the first preset temperature value, and then completing the deposition of the copper seed layer on the first substrate after completing the first cooling process in the second process chamber 300, which not only makes the conductive film There will be no interaction between the deposition and the deposition of the copper seed layer, ensuring the deposition quality of the conductive film and the deposition quality of the copper seed layer; moreover, the deposition of the conductive film and the deposition of the copper seed layer do not require changing the carrier, and the processing is simple and It is convenient and improves production efficiency; and, after completing the deposition of the conductive film at a higher temperature in the first process chamber 100, a sufficient first cooling process is performed in the first cooling chamber 200, and finally in the second process The deposition of the copper seed layer is completed in the chamber 300 without damaging the amorphous silicon film layer, ensuring product quality; at the same time, the deposition of the conductive film is completed at a higher temperature in the first process chamber 100, and in the second process The deposition of the copper seed layer is completed in the process chamber 300 at a lower temperature, which will not have an irreversible impact on the electrochemical temperature performance of the film layer, ensuring product quality.
如图1及图2所示，在一个实施例中，第一冷却腔室200包括至少两个相互连通的第一冷却分腔210，并且，沿第一基体的输送方向，后一个第一冷却分腔210的冷却功率大于前一个第一冷却分腔210的冷却功率。如此，能够对第一基体进行至少两个阶段的第一冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度逐步降低至第一预设温度值，不仅能够保证第一基体的降温效果，而且能够避免因冷却过快而对膜层造成影响。As shown in FIGS. 1 and 2 , in one embodiment, the first cooling chamber 200 includes at least two interconnected first cooling sub-chambers 210 , and, along the conveying direction of the first substrate, the latter first cooling chamber The cooling power of the sub-cavity 210 is greater than the cooling power of the previous first cooling sub-cavity 210 . In this way, at least two stages of the first cooling process can be performed on the first substrate, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first substrate gradually decreases to the first preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
在一个实施例中，将第一基体依次送入至少两个第一冷却分腔210内先后进行冷却，且沿第一基体的输送方向，后一个第一冷却分腔210的冷却功率大于前一个第一冷却分腔210的冷却功率，从而能够对第一基体实现递进式冷却降温，使得第一基体的温度逐步降低至第一预设温度值。In one embodiment, the first substrate is sequentially sent into at least two first cooling sub-cavities 210 for cooling, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity 210 is greater than that of the previous one. The cooling power of the first cooling sub-cavity 210 can achieve progressive cooling and lowering of the first substrate, so that the temperature of the first substrate gradually decreases to the first preset temperature value.
如图1及图2所示，另外，铜种子层镀膜装置还包括转运机构500。其中，转运机构500设置于第一冷却腔室200与第二工艺腔室300之间，根据实际生产要求，利用转运机构500能够对第一基体进行转运处理，例如，当仅需要获取完成导电薄膜的第一基体时，则可以利用转运机构500进行卸料。当然，也可以利用转运机构500进行第一基体的上料，使得第一基体进入第二工艺腔室300内进行铜种子层的沉积。As shown in FIGS. 1 and 2 , in addition, the copper seed layer plating device also includes a transfer mechanism 500 . Among them, the transfer mechanism 500 is disposed between the first cooling chamber 200 and the second process chamber 300. According to actual production requirements, the transfer mechanism 500 can be used to transfer the first substrate, for example, when only the completed conductive film needs to be obtained When the first substrate is the first substrate, the transfer mechanism 500 can be used to unload. Of course, the transfer mechanism 500 can also be used to load the first substrate, so that the first substrate enters the second process chamber 300 for deposition of the copper seed layer.
在一个实施例中，通过将转运机构500布置在第一冷却腔室200的下一工序位置，利用第一冷却腔室200对第一基体进行第一冷却处理后再利用转运机构500进行转运处理而实现下料，避免第一基体的温度过高而暴露在空气中而影响膜层质量。In one embodiment, by arranging the transfer mechanism 500 at the next process position of the first cooling chamber 200, the first cooling chamber 200 is used to perform the first cooling process on the first substrate, and then the transfer mechanism 500 is used to perform the transfer process. In order to realize blanking, the temperature of the first substrate is prevented from being too high and exposed to the air, thereby affecting the quality of the film layer.
其中，转运机构500可以是传统的板式镀膜下料自动化衔接机台或其他传统的能够实现第一基体上下料的装置。The transfer mechanism 500 may be a traditional plate-type coating unloading automatic connection machine or other traditional devices capable of loading and unloading the first substrate.
如图1及图2所示，另外，铜种子层镀膜装置还包括第一缓存腔室400，利用第一缓存腔室400能够对第一基体进行第一缓存处理。其中，第一缓存腔室400设置于第一冷却腔室200与转运机构500之间，并且，第一缓存腔室400与第一冷却腔室200连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将发生异常的第一基体完成第一冷却处理后缓存在第一缓存腔室400内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；同时，利用第一缓存腔室400也能对未来得及下料的第一基体进行缓存，避免输送过程中造成拥堵或碰撞而导致损坏，使得产线能够可靠、稳定的运行。并且，先对第一基体进行第一冷却处理后再进行缓存，能够适应转运机构500的布置要求，也能避免各个第一冷却分腔210之间发生串气。 As shown in FIGS. 1 and 2 , in addition, the copper seed layer plating device further includes a first cache chamber 400 , and the first cache chamber 400 can be used to perform a first cache process on the first substrate. The first buffer chamber 400 is disposed between the first cooling chamber 200 and the transfer mechanism 500 , and the first buffer chamber 400 is connected with the first cooling chamber 200 . In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the abnormal first substrate can be cached in the first cache chamber 400 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the first buffer chamber 400 can also be used to buffer the first substrate that cannot be unloaded in the future to avoid damage caused by congestion or collision during the transportation process, so that the production line can be reliable and Stable operation. Furthermore, performing the first cooling process on the first substrate before caching can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the first cooling sub-cavities 210 .
其中，第一缓存腔室400可以为具有存储空间的设备。Wherein, the first cache chamber 400 may be a device having a storage space.
如图1及图2所示，进一步地，铜种子层镀膜装置还包括第二冷却腔室600，从而利用第二冷却腔室600能够对第一基体进行第二冷却处理。其中，第二冷却腔室600设置于第二工艺腔室300与转运机构500之间，并且，第二冷却腔室600与第二工艺腔室300连通。如此，能够对从转运机构500处上料而来的第一基体进行第二冷却处理，使得该第一基体的温度降低至第二预设温度值，不会破坏非晶硅膜层，保证产品质量。同时，当不需要利用转运机构500对第一基体进行转运时，利用第二冷却腔室600对完成第一冷却处理的第一基体进行进一步第二冷却处理，冷却效果更好，在进行铜种子层的沉积时能够更有效的避免对非晶硅膜层造成破坏。As shown in FIGS. 1 and 2 , further, the copper seed layer plating device further includes a second cooling chamber 600 , so that the second cooling chamber 600 can be used to perform a second cooling process on the first substrate. The second cooling chamber 600 is disposed between the second process chamber 300 and the transfer mechanism 500 , and the second cooling chamber 600 is connected with the second process chamber 300 . In this way, the first substrate loaded from the transfer mechanism 500 can be subjected to the second cooling process, so that the temperature of the first substrate is reduced to the second preset temperature value, without damaging the amorphous silicon film layer, ensuring that the product quality. At the same time, when there is no need to use the transfer mechanism 500 to transport the first substrate, the second cooling chamber 600 is used to further perform a second cooling process on the first substrate that has completed the first cooling process. The cooling effect is better, and the copper seeds are processed The deposition of the layer can more effectively avoid damage to the amorphous silicon film layer.
其中，第二预设温度值可以根据实际工艺要求进行灵活的设计或调整，例如可以是60℃以下。The second preset temperature value can be flexibly designed or adjusted according to actual process requirements, for example, it can be below 60°C.
在一个实施例中，可以通过加装冷泵并结合破真空与抽真空的方式对第二冷却腔室600内的第一基体进行降温，也可以向第二冷却腔室600内通入低温氮气、压缩空气等方式对第二冷却腔室600内的第一基体进行降温，还可以通过冷阱的方式对第二冷却腔室600内的第一基体进行降温。In one embodiment, the temperature of the first substrate in the second cooling chamber 600 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the second cooling chamber 600 The first substrate in the second cooling chamber 600 can be cooled by using methods such as , compressed air, etc., or the first substrate in the second cooling chamber 600 can be cooled by using a cold trap.
如图1及图2所示，在一个实施例中，第二冷却腔室600包括至少两个相互连通的第二冷却分腔610，并且，沿第一基体的输送方向，后一个第二冷却分腔610的冷却功率大于前一个第二冷却分腔610的冷却功率。如此，能够对第一基体进行至少两个阶段的第二冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度逐步降低至第二预设温度值，不仅能够保证第一基体的降温效果，而且能够避免因冷却过快而对膜层造成影响。As shown in FIGS. 1 and 2 , in one embodiment, the second cooling chamber 600 includes at least two second cooling sub-chambers 610 that communicate with each other, and along the conveying direction of the first substrate, the latter second cooling chamber 610 The cooling power of the sub-cavity 610 is greater than the cooling power of the previous second cooling sub-cavity 610 . In this way, at least two stages of the second cooling process can be performed on the first base body, so that the cooling power of the later stage is greater than the cooling power of the previous stage, until the temperature of the first base body gradually decreases to the second preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
在一个实施例中，将第一基体依次送入至少两个第二冷却分腔610内先后进行冷却，且沿第一基体的输送方向，后一个第二冷却分腔610的冷却功率大于前一个第二冷却分腔610的冷却功率，从而能够对第一基体实现递进式冷却降温，使得第一基体的温度逐步降低至第二预设温度值。In one embodiment, the first substrate is sequentially sent into at least two second cooling sub-cavities 610 for cooling, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity 610 is greater than that of the previous one. The cooling power of the second cooling sub-cavity 610 can achieve progressive cooling and lowering of the first substrate, so that the temperature of the first substrate gradually decreases to the second preset temperature value.
如图1及图2所示，更进一步地，铜种子层镀膜装置还包括第二缓存腔室700，利用第二缓存腔室700能够对第一基体进行第二缓存处理。其中，第二缓存腔室700设置于第二冷却腔室600与转运机构500之间，并且，第二缓存腔室700与第二冷却腔室600连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将发生异常的第一基体完成第一冷却处理后缓存在第二缓存腔室700内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；同时，利用第二缓存腔室700也能对未来得及进行铜种子层沉积的 第一基体进行缓存，避免输送过程中造成拥堵或碰撞而导致损坏，使得产线能够可靠、稳定的运行。并且，先对第一基体进行缓存后进行第二冷却处理，能够适应转运机构500的布置要求，也能避免各个第二冷却分腔610之间发生串气。As shown in FIGS. 1 and 2 , further, the copper seed layer plating device further includes a second cache chamber 700 , and the second cache chamber 700 can be used to perform a second cache process on the first substrate. The second buffer chamber 700 is disposed between the second cooling chamber 600 and the transfer mechanism 500 , and the second buffer chamber 700 is connected with the second cooling chamber 600 . In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the abnormal first substrate can be cached in the second cache chamber 700 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the second cache chamber 700 can also be used to deposit copper seed layers in the future. The first matrix is cached to avoid damage caused by congestion or collision during the transportation process, so that the production line can operate reliably and stably. Moreover, caching the first substrate first and then performing the second cooling process can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the second cooling sub-cavities 610 .
其中，第二缓存腔室700可以为具有存储空间的设备。Wherein, the second cache chamber 700 may be a device having a storage space.
如图1及图2所示，另外，铜种子层镀膜装置还包括第三冷却腔室800，利用第三冷却腔室800能够对第一成品完成第三冷却处理。其中，第三冷却腔室800设置于第二工艺腔室300的下一工序位置，并且，第三冷却腔室800与第二工艺腔室300连通。如此设置，在第二工艺腔室300内，第一基体完成铜种子层的沉积而得到第一成品过程中会使得第一成品温度上升，利用第三冷却腔室800对第一成品进行第三冷却处理而使得第一成品的温度降低至第三预设温度值，能够避免第一成品直接暴露在空气中而被氧化。As shown in FIGS. 1 and 2 , in addition, the copper seed layer coating device further includes a third cooling chamber 800 , and the third cooling chamber 800 can be used to complete the third cooling process on the first finished product. Wherein, the third cooling chamber 800 is disposed at the next process position of the second process chamber 300, and the third cooling chamber 800 is connected with the second process chamber 300. With this arrangement, in the second process chamber 300, when the first substrate completes the deposition of the copper seed layer to obtain the first finished product, the temperature of the first finished product will rise. The third cooling chamber 800 is used to perform the third step on the first finished product. The cooling process reduces the temperature of the first finished product to the third preset temperature value, thereby preventing the first finished product from being directly exposed to the air and being oxidized.
其中，第三预设温度值可以根据实际工艺要求进行灵活的设计或调整，只需满足能够避免铜种子层被空气氧化即可。Among them, the third preset temperature value can be flexibly designed or adjusted according to actual process requirements, as long as it can prevent the copper seed layer from being oxidized by air.
在一个实施例中，可以通过加装冷泵并结合破真空与抽真空的方式对第三冷却腔室800内的第一成品进行降温，也可以向第三冷却腔室800内通入低温氮气、压缩空气等方式对第三冷却腔室800内的第一成品进行降温，还可以通过冷阱的方式对第三冷却腔室800内的第一成品进行降温。In one embodiment, the temperature of the first finished product in the third cooling chamber 800 can be cooled by adding a cold pump and combining vacuum breaking and evacuation, or low-temperature nitrogen can be introduced into the third cooling chamber 800 The first finished product in the third cooling chamber 800 can be cooled down by using methods such as , compressed air, etc., and the first finished product in the third cooling chamber 800 can also be cooled down through a cold trap.
如图1及图2所示，在一个实施例中，第三冷却腔室800包括至少两个相互连通的第三冷却分腔810，并且，沿第一成品的输送方向，后一个第三冷却分腔810的冷却功率大于前一个第三冷却分腔810的冷却功率。如此，能够对第一成品进行至少两个阶段的第三冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一成品的温度逐步降低至第三预设温度值，不仅能够保证第一成品的降温效果，而且能够避免因冷却过快而对膜层造成影响。As shown in Figures 1 and 2, in one embodiment, the third cooling chamber 800 includes at least two interconnected third cooling sub-chambers 810, and, along the conveying direction of the first finished product, the latter third cooling chamber The cooling power of the sub-cavity 810 is greater than the cooling power of the previous third cooling sub-cavity 810 . In this way, at least two stages of the third cooling process can be performed on the first finished product, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first finished product gradually decreases to the third preset temperature value, not only It can ensure the cooling effect of the first finished product and avoid the impact on the film layer due to too fast cooling.
在一个实施例中，将第一成品依次送入至少两个第三冷却分腔810内先后进行冷却，且沿第一成品的输送方向，后一个第三冷却分腔810的冷却功率大于前一个第三冷却分腔810的冷却功率，从而能够对第一成品实现递进式冷却降温，使得第一成品的温度逐步降低至第三预设温度值。In one embodiment, the first finished product is sequentially sent into at least two third cooling sub-cavities 810 for cooling, and along the conveying direction of the first finished product, the cooling power of the latter third cooling sub-cavity 810 is greater than that of the previous one. The cooling power of the third cooling sub-chamber 810 can achieve progressive cooling and lowering of the first finished product, so that the temperature of the first finished product gradually decreases to the third preset temperature value.
如图1及图2所示，此外，铜种子层镀膜装置还包括第三缓存腔室900，利用第三缓存腔室900能够对第一成品进行第三缓存处理。其中，第三缓存腔室900设置于第三冷却腔室800的一侧，即第三缓存腔室900位于第三冷却腔室800的下一工序位置，并且，第三缓存腔室900与第三冷却腔室800连通。如此，在生产过程中，若铜种子层的沉积发生异常，则可以将发生异常的第一成品完成第三冷却处理后缓存在第三缓存腔室900内，避 免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；并且，先对第一成品进行第三冷却处理再进行缓存，也能避免各个第三冷却分腔810之间发生串气。As shown in FIGS. 1 and 2 , in addition, the copper seed layer plating device further includes a third buffer chamber 900 , and the third buffer chamber 900 can be used to perform a third buffer process on the first finished product. The third cache chamber 900 is disposed on one side of the third cooling chamber 800 , that is, the third cache chamber 900 is located at the next process position of the third cooling chamber 800 , and the third cache chamber 900 is connected to the third cooling chamber 800 . Three cooling chambers 800 are connected. In this way, during the production process, if an abnormality occurs in the deposition of the copper seed layer, the abnormal first finished product can be cached in the third cache chamber 900 after completing the third cooling process to avoid This avoids downtime due to abnormalities, allowing the production line to run smoothly and improving production efficiency; in addition, first performing the third cooling process on the first finished product and then caching can also avoid air cross-flow between the third cooling chambers 810 .
其中，第三缓存腔室900可以为具有存储空间的设备。The third cache chamber 900 may be a device with storage space.
如图2所示，同时，第一工艺腔室100包括相互连通的第一隔离区110及第一镀膜区120。其中，第一镀膜区120相对于第一隔离区110靠近第一冷却腔室200设置，并且，第一镀膜区120与第一冷却腔室200连通。由于完成非晶硅膜层沉积的待镀膜件在进入第一工艺腔室100内进行导电薄膜的沉积之前需要对待镀膜件进行加热以保证导电薄膜的沉积效果，使得待镀膜件进入第一工艺腔室100内后，待镀膜件先经过第一隔离区110后再经过第一镀膜区120而对待镀膜件沉积导电薄膜以得到第一基体，利用第一隔离区110能够隔绝加热产生的热辐射，避免对导电薄膜的沉积造成影响，保证导电薄膜的沉积效果。As shown in FIG. 2 , at the same time, the first process chamber 100 includes a first isolation area 110 and a first coating area 120 that are connected to each other. The first coating area 120 is disposed close to the first cooling chamber 200 relative to the first isolation area 110 , and the first coating area 120 is connected to the first cooling chamber 200 . Since the parts to be coated that have completed the deposition of the amorphous silicon film layer need to be heated before entering the first process chamber 100 for deposition of the conductive film to ensure the deposition effect of the conductive film, the parts to be coated enter the first process chamber. After entering the chamber 100, the parts to be coated first pass through the first isolation area 110 and then pass through the first coating area 120, and a conductive film is deposited on the parts to be coated to obtain the first substrate. The first isolation area 110 can be used to isolate the thermal radiation generated by heating. Avoid affecting the deposition of conductive films and ensure the deposition effect of conductive films.
其中，在第一镀膜区120对待镀膜件沉积导电薄膜，可以采用传统的磁控溅射方式进行。The conductive film deposited on the part to be coated in the first coating area 120 can be carried out by traditional magnetron sputtering.
如图1及图2所示，在一个实施例中，铜种子层镀膜装置还包括加热腔室1000，利用加热腔室1000能够对待镀膜件进行加热处理。其中，加热腔室1000设置于第一工艺腔室100的上一工序位置，并且，加热腔室1000与第一工艺腔室100连通。如此，能够对待镀膜件进行预热而使得待镀膜件的温度上升至第四预设温度值，使得待镀膜件满足导电薄膜的沉积要求，保证导电薄膜的沉积质量。As shown in FIGS. 1 and 2 , in one embodiment, the copper seed layer coating device further includes a heating chamber 1000 , and the heating chamber 1000 can be used to heat the parts to be coated. The heating chamber 1000 is disposed at a previous process position of the first process chamber 100, and the heating chamber 1000 is connected with the first process chamber 100. In this way, the part to be coated can be preheated so that the temperature of the part to be coated rises to the fourth preset temperature value, so that the part to be coated meets the deposition requirements of the conductive film and ensures the deposition quality of the conductive film.
其中，第四预设温度值可以根据实际工艺要求进行灵活的设计或调整，只需能够促进导电薄膜的沉积即可。Among them, the fourth preset temperature value can be flexibly designed or adjusted according to actual process requirements, as long as it can promote the deposition of the conductive film.
其中，可以通过电加热等方式对加热腔室1000内的待镀膜件进行加热。Among them, the parts to be coated in the heating chamber 1000 can be heated by electric heating or other means.
如图1及图2所示，在一个实施例中，加热腔室1000包括至少两个相互连通的加热分腔1100，并且，沿待镀膜件的输送方向(如图1及图2的A方向所示)，后一个加热分腔1100的加热功率大于前一个加热分腔1100的加热功率。如此，能够对待镀膜件进行至少两个阶段的加热处理，使得后一个阶段的加热功率大于前一个阶段的加热功率，直至待镀膜件的温度逐步上升至第四预设温度值，不仅能够保证待镀膜件的加热效果，而且能够避免因加热过快而对膜层造成影响。As shown in FIGS. 1 and 2 , in one embodiment, the heating chamber 1000 includes at least two interconnected heating sub-cavities 1100 , and the heating chamber 1000 includes at least two interconnected heating sub-chambers 1100 along the conveying direction of the parts to be coated (direction A in FIGS. 1 and 2 As shown), the heating power of the latter heating sub-cavity 1100 is greater than the heating power of the previous heating sub-cavity 1100. In this way, the parts to be coated can be heated in at least two stages, so that the heating power of the latter stage is greater than the heating power of the previous stage, until the temperature of the parts to be coated gradually rises to the fourth preset temperature value, which not only ensures that the parts to be coated are The heating effect of coated parts can also avoid the impact on the film layer due to excessive heating.
在一个实施例中，将待镀膜件依次送入至少两个加热分腔1100内先后进行加热，且沿待镀膜件的输送方向，后一个加热分腔1100的加热功率大于前一个加热分腔1100的加热功率，从而能够对待镀膜件实现递进式加热，使得待镀膜件的温度逐步上升至第四预设温度值。In one embodiment, the parts to be coated are sequentially sent into at least two heating sub-chambers 1100 for heating, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-cavity 1100 is greater than that of the previous heating sub-chamber 1100 The heating power can realize progressive heating of the parts to be coated, so that the temperature of the parts to be coated gradually rises to the fourth preset temperature value.
如图1及图2所示，进一步地，铜种子层镀膜装置还包括第四缓存腔室2000，利用第 四缓存腔室2000能够对待镀膜件进行第四缓存处理。其中，第四缓存腔室2000设置于加热腔室1000的一侧，即第四缓存腔室2000位于加热腔室1000的上一工序位置，并且，第四缓存腔室2000与加热腔室1000连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将待镀膜件缓存在第四缓存腔室2000内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；并且，也能避免各个加热分腔1100之间发生串气。As shown in Figures 1 and 2, further, the copper seed layer plating device further includes a fourth cache chamber 2000. The four-buffer chamber 2000 can perform a fourth buffering process on the parts to be coated. Among them, the fourth cache chamber 2000 is disposed on one side of the heating chamber 1000, that is, the fourth cache chamber 2000 is located at the previous process position of the heating chamber 1000, and the fourth cache chamber 2000 is connected with the heating chamber 1000. . In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the parts to be coated can be cached in the fourth cache chamber 2000 to avoid shutdowns caused by abnormalities, allowing the production line to run smoothly and improving production efficiency; In addition, gas cross-flow between heating sub-chambers 1100 can also be avoided.
其中，第四缓存腔室2000可以为具有存储空间的设备。The fourth cache chamber 2000 may be a device with storage space.
如图2所示，同时，第二工艺腔室300包括第二镀膜区310、第二隔离区320及第三镀膜区330。其中，第二隔离区320位于第二镀膜区310与第三镀膜区330之间，并且，第二镀膜区310及第三镀膜区330均与第二隔离区320相连通，第二镀膜区310与第一冷却腔室200连通并用于对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积，第三镀膜区330用于对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积。在一个实施例中，完成第一冷却处理的第一基体进入第二工艺腔室300内后，先进入第二镀膜区310而在第二镀膜区310对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积，接着使得完成了一个表面的铜种子层沉积的第一基体经过第二隔离区320，再使得完成了一个表面的铜种子层沉积的第一基体进入第三镀膜区330而在第三镀膜区330完成正面与背面中的另外一个表面的铜种子层的沉积。如此设置，经过第一冷却处理的第一基体在第二镀膜区310完成一个表面的铜种子层沉积，由于第一基体的温度适宜，能够保证沉积效果。由于在第二镀膜区310进行一个表面的铜种子层沉积过程中，第一基体的温度会上升，通过将第一基体先经过第二隔离区320而进行降温冷却，然后再进入第三镀膜区330进行另一个表面的铜种子层沉积，能够有效的保证第三镀膜区330的沉积质量，提升产品品质。As shown in FIG. 2 , at the same time, the second process chamber 300 includes a second coating area 310 , a second isolation area 320 and a third coating area 330 . Among them, the second isolation area 320 is located between the second coating area 310 and the third coating area 330, and both the second coating area 310 and the third coating area 330 are connected with the second isolation area 320. The second coating area 310 Communicated with the first cooling chamber 200 and used to deposit a copper seed layer on one of the front and back surfaces of the first substrate, the third coating area 330 is used to deposit the copper seed layer on the other surface of the front and back surfaces of the first substrate. Complete deposition of the copper seed layer. In one embodiment, after the first substrate that has completed the first cooling process enters the second process chamber 300, it first enters the second coating area 310 and in the second coating area 310, one of the front and back surfaces of the first substrate is The copper seed layer is deposited on one surface, and then the first substrate on which the copper seed layer is deposited on one surface passes through the second isolation area 320 , and then the first substrate on which the copper seed layer is deposited on one surface enters the third plating film. area 330, and in the third coating area 330, the deposition of the copper seed layer on the other surface of the front surface and the back surface is completed. With this arrangement, the first substrate that has undergone the first cooling process completes the copper seed layer deposition on one surface in the second coating area 310. Since the temperature of the first substrate is appropriate, the deposition effect can be ensured. Since the temperature of the first substrate will rise during the deposition of a surface copper seed layer in the second coating area 310, the first substrate is cooled by first passing through the second isolation area 320, and then entering the third coating area. 330 performs copper seed layer deposition on another surface, which can effectively ensure the deposition quality of the third coating area 330 and improve product quality.
其中，在第二镀膜区310和第三镀膜区330对第一基体沉积铜种子层，可以采用传统的磁控溅射方式进行。The depositing of the copper seed layer on the first substrate in the second coating area 310 and the third coating area 330 can be performed using traditional magnetron sputtering.
同时，铜种子层镀膜装置还包括残余气体分析元件，利用残余气体分析元件对第二工艺腔室300内的水汽等气体的监控分析，能够更好的把控铜种子层的沉积效果。At the same time, the copper seed layer coating device also includes a residual gas analysis element. The residual gas analysis element is used to monitor and analyze water vapor and other gases in the second process chamber 300 to better control the deposition effect of the copper seed layer.
其中，残余气体分析元件可以为传统的残余气体分析仪等仪器。Among them, the residual gas analysis component can be a traditional residual gas analyzer and other instruments.
在另一个实施例中，还提供了一种铜种子层镀膜工艺，包括以下步骤：In another embodiment, a copper seed layer plating process is also provided, including the following steps:
S100、对待镀膜件进行第四缓存处理。S100. Perform fourth buffer processing on the parts to be coated.
在一个实施例中，第四缓存腔室2000设置于加热腔室1000的一侧，即第四缓存腔室2000位于加热腔室1000的上一工序位置，并且，第四缓存腔室2000与加热腔室1000连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将待镀膜件缓存在第四缓 存腔室2000内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；并且，也能避免各个加热分腔1100之间发生串气。In one embodiment, the fourth cache chamber 2000 is disposed on one side of the heating chamber 1000 , that is, the fourth cache chamber 2000 is located at the previous process position of the heating chamber 1000 , and the fourth cache chamber 2000 is connected to the heating chamber 1000 . Chambers 1000 are connected. In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the parts to be coated can be cached in the fourth buffer. It is stored in the chamber 2000 to avoid downtime due to abnormalities, allowing the production line to run smoothly and improving production efficiency; and it can also avoid gas cross-flow between each heating sub-cavity 1100.
S200、对待镀膜件进行加热处理。S200. Heat the parts to be coated.
在一个实施例中，加热腔室1000设置于第一工艺腔室100的上一工序位置，并且，加热腔室1000与第一工艺腔室100连通。如此，能够对待镀膜件进行预热而使得待镀膜件的温度上升至第四预设温度值，使得待镀膜件满足导电薄膜的沉积要求，保证导电薄膜的沉积质量。In one embodiment, the heating chamber 1000 is disposed at a previous process position of the first process chamber 100, and the heating chamber 1000 is in communication with the first process chamber 100. In this way, the part to be coated can be preheated so that the temperature of the part to be coated rises to the fourth preset temperature value, so that the part to be coated meets the deposition requirements of the conductive film and ensures the deposition quality of the conductive film.
在一个实施例中，在S200中，包括S210、将待镀膜件进行至少两个阶段的加热处理，且后一个阶段的加热功率大于前一个阶段的加热功率，直至待镀膜件的温度上升至第四预设温度值。In one embodiment, in S200, including S210, the part to be coated is subjected to at least two stages of heating treatment, and the heating power of the latter stage is greater than the heating power of the previous stage until the temperature of the part to be coated rises to the first Four preset temperature values.
在一个实施例中，加热腔室1000包括至少两个相互连通的加热分腔1100，并且，沿待镀膜件的输送方向，后一个加热分腔1100的加热功率大于前一个加热分腔1100的加热功率。如此，能够对待镀膜件进行至少两个阶段的加热处理，使得后一个阶段的加热功率大于前一个阶段的加热功率，直至待镀膜件的温度逐步上升至第四预设温度值，不仅能够保证待镀膜件的加热效果，而且能够避免因加热过快而对膜层造成影响。In one embodiment, the heating chamber 1000 includes at least two interconnected heating sub-chambers 1100, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-chamber 1100 is greater than the heating power of the previous heating sub-chamber 1100. power. In this way, the parts to be coated can be heated in at least two stages, so that the heating power of the latter stage is greater than the heating power of the previous stage, until the temperature of the parts to be coated gradually rises to the fourth preset temperature value, which not only ensures that the parts to be coated are The heating effect of coated parts can also avoid the impact on the film layer due to excessive heating.
在一个实施例中，在S210中，包括S211、将待镀膜件依次送入至少两个加热分腔1100内先后进行加热，且沿待镀膜件的输送方向，后一个加热分腔1100的加热功率大于前一个加热分腔1100的加热功率，从而能够对待镀膜件实现递进式加热，使得待镀膜件的温度逐步上升至第四预设温度值。In one embodiment, in S210, including S211, the parts to be coated are sequentially sent into at least two heating sub-chambers 1100 for heating, and along the conveying direction of the parts to be coated, the heating power of the latter heating sub-cavity 1100 is The heating power is greater than the heating power of the previous heating sub-chamber 1100, so that the parts to be coated can be progressively heated, so that the temperature of the parts to be coated gradually rises to the fourth preset temperature value.
S300、在第一工艺腔室100内完成导电薄膜的沉积以得到第一基体。S300. Complete the deposition of the conductive film in the first process chamber 100 to obtain the first substrate.
在一个实施例中，将完成了非晶硅膜层沉积的待镀膜件送入第一工艺腔室100内，采取磁控溅射等方式在第一工艺腔室100内进行导电薄膜的沉积，从而得到第一基体。In one embodiment, the parts to be coated that have been deposited with the amorphous silicon film layer are sent into the first process chamber 100, and a conductive film is deposited in the first process chamber 100 by magnetron sputtering or other methods. Thus, the first matrix is obtained.
在一个实施例中，在S300中，包括S310、使待镀膜件先经过第一隔离区110后再在第一镀膜区120对待镀膜件沉积导电薄膜以得到第一基体。由于完成非晶硅膜层沉积的待镀膜件在进入第一工艺腔室100内进行导电薄膜的沉积之前需要对待镀膜件进行加热以保证导电薄膜的沉积效果，使得待镀膜件进入第一工艺腔室100内后，待镀膜件先经过第一隔离区110后再经过第一镀膜区120而对待镀膜件沉积导电薄膜以得到第一基体，利用第一隔离区110能够隔绝加热产生的热辐射，避免对导电薄膜的沉积造成影响，保证导电薄膜的沉积效果。In one embodiment, S300 includes S310, where the object to be coated first passes through the first isolation area 110 and then a conductive film is deposited on the object to be coated in the first coating area 120 to obtain the first substrate. Since the parts to be coated that have completed the deposition of the amorphous silicon film layer need to be heated before entering the first process chamber 100 for deposition of the conductive film to ensure the deposition effect of the conductive film, the parts to be coated enter the first process chamber. After entering the chamber 100, the parts to be coated first pass through the first isolation area 110 and then pass through the first coating area 120, and a conductive film is deposited on the parts to be coated to obtain the first substrate. The first isolation area 110 can be used to isolate the thermal radiation generated by heating. Avoid affecting the deposition of conductive films and ensure the deposition effect of conductive films.
S400、将第一基体在第一冷却腔室200内完成第一冷却处理。S400. Complete the first cooling process of the first substrate in the first cooling chamber 200.
在一个实施例中，先在第一工艺腔室100内得到第一基体，再将第一基体送入第一冷 却腔室200内，从而利用第一冷却腔室200对第一基体完成第一冷却处理，进而使得第一基体的温度降低至第一预设温度值。In one embodiment, the first substrate is first obtained in the first process chamber 100, and then the first substrate is sent to the first cold The first cooling chamber 200 is used to complete the first cooling process on the first substrate, thereby reducing the temperature of the first substrate to the first preset temperature value.
在一个实施例中，在S400中，包括S410、将第一基体进行至少两个阶段的第一冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度降低至第一预设温度值。In one embodiment, S400 includes S410, subjecting the first substrate to at least two stages of first cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate decreases. to the first preset temperature value.
在一个实施例中，第一冷却腔室200包括至少两个相互连通的第一冷却分腔210，并且，沿第一基体的输送方向，后一个第一冷却分腔210的冷却功率大于前一个第一冷却分腔210的冷却功率。如此，能够对第一基体进行至少两个阶段的第一冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度逐步降低至第一预设温度值，不仅能够保证第一基体的降温效果，而且能够避免因冷却过快而对膜层造成影响。In one embodiment, the first cooling chamber 200 includes at least two interconnected first cooling sub-cavities 210 , and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity 210 is greater than that of the previous one. The cooling power of the first cooling sub-chamber 210. In this way, at least two stages of the first cooling process can be performed on the first substrate, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first substrate gradually decreases to the first preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
在一个实施例中，在S410中，包括S411、将第一基体依次送入至少两个第一冷却分腔210内先后进行冷却，且沿第一基体的输送方向，后一个第一冷却分腔210的冷却功率大于前一个第一冷却分腔210的冷却功率。如此，能够对第一基体实现递进式冷却降温，使得第一基体的温度逐步降低至第一预设温度值。In one embodiment, in S410, including S411, the first substrate is sequentially sent into at least two first cooling sub-cavities 210 for cooling, and along the conveying direction of the first substrate, the next first cooling sub-cavity The cooling power of 210 is greater than the cooling power of the previous first cooling sub-cavity 210 . In this way, progressive cooling of the first substrate can be achieved, so that the temperature of the first substrate gradually decreases to the first preset temperature value.
S500、将完成第一冷却处理后的第一基体在第一缓存腔室400内进行第一缓存处理。S500. Perform the first buffering process on the first substrate that has completed the first cooling process in the first buffering chamber 400.
在一个实施例中，第一缓存腔室400设置于第一冷却腔室200与转运机构500之间，并且，第一缓存腔室400与第一冷却腔室200连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将发生异常的第一基体完成第一冷却处理后缓存在第一缓存腔室400内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；同时，利用第一缓存腔室400也能对未来得及下料的第一基体进行缓存，避免输送过程中造成拥堵或碰撞而导致损坏，使得产线能够可靠、稳定的运行。并且，先对第一基体进行第一冷却处理后再进行缓存，能够适应转运机构500的布置要求，也能避免各个第一冷却分腔210之间发生串气。In one embodiment, the first cache chamber 400 is disposed between the first cooling chamber 200 and the transfer mechanism 500 , and the first cache chamber 400 communicates with the first cooling chamber 200 . In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the abnormal first substrate can be cached in the first cache chamber 400 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the first buffer chamber 400 can also be used to buffer the first substrate that cannot be unloaded in the future to avoid damage caused by congestion or collision during the transportation process, so that the production line can be reliable and Stable operation. Furthermore, performing the first cooling process on the first substrate before caching can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the first cooling sub-cavities 210 .
S600、对第一基体进行转运处理。S600. Carry out transport processing on the first matrix.
在一个实施例中，转运机构500设置于第一冷却腔室200与第二工艺腔室300之间，根据实际生产要求，利用转运机构500能够对第一基体进行转运处理，例如，当仅需要获取完成导电薄膜的第一基体时，则可以利用转运机构500进行卸料。当然，也可以利用转运机构500进行第一基体的上料，使得第一基体进入第二工艺腔室300内进行铜种子层的沉积。In one embodiment, the transfer mechanism 500 is disposed between the first cooling chamber 200 and the second process chamber 300. According to actual production requirements, the transfer mechanism 500 can be used to transfer the first substrate, for example, when only When the first substrate of the completed conductive film is obtained, the transfer mechanism 500 can be used for unloading. Of course, the transfer mechanism 500 can also be used to load the first substrate, so that the first substrate enters the second process chamber 300 for deposition of the copper seed layer.
在一个实施例中，在S600中，包括S610、将完成第一冷却处理后的第一基体进行转运处理。通过将转运机构500布置在第一冷却腔室200的下一工序位置，利用第一冷却腔 室200对第一基体进行第一冷却处理后再利用转运机构500进行转运处理而实现下料，避免第一基体的温度过高而暴露在空气中而影响膜层质量。In one embodiment, S600 includes S610, transferring the first substrate after completing the first cooling process. By arranging the transfer mechanism 500 at the next process position of the first cooling chamber 200, the first cooling chamber is utilized The chamber 200 performs the first cooling process on the first substrate and then uses the transfer mechanism 500 to perform transfer processing to realize unloading, so as to avoid the temperature of the first substrate being too high and being exposed to the air to affect the quality of the film layer.
S700、将第一基体在第二缓存腔室700内进行第二缓存处理。S700. Perform a second cache process on the first substrate in the second cache chamber 700.
在一个实施例中，第二缓存腔室700设置于第二冷却腔室600与转运机构500之间，并且，第二缓存腔室700与第二冷却腔室600连通。如此，在生产过程中，若导电薄膜的沉积发生异常，则可以将发生异常的第一基体完成第一冷却处理后缓存在第二缓存腔室700内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；同时，利用第二缓存腔室700也能对未来得及进行铜种子层沉积的第一基体进行缓存，避免输送过程中造成拥堵或碰撞而导致损坏，使得产线能够可靠、稳定的运行。并且，先对第一基体进行缓存后进行第二冷却处理，能够适应转运机构500的布置要求，也能避免各个第二冷却分腔610之间发生串气。In one embodiment, the second cache chamber 700 is disposed between the second cooling chamber 600 and the transfer mechanism 500 , and the second cache chamber 700 communicates with the second cooling chamber 600 . In this way, during the production process, if an abnormality occurs in the deposition of the conductive film, the abnormal first substrate can be cached in the second cache chamber 700 after completing the first cooling process, so as to avoid shutdown due to abnormality, so that the production line can Smooth operation improves production efficiency; at the same time, the second cache chamber 700 can also be used to cache the first substrate that will not have time to deposit the copper seed layer in the future to avoid damage caused by congestion or collision during the transportation process, which makes the production line Able to operate reliably and stably. Moreover, caching the first substrate first and then performing the second cooling process can adapt to the layout requirements of the transfer mechanism 500 and avoid air cross-flow between the second cooling sub-cavities 610 .
S800、将第一基体在第二冷却腔室600内完成第二冷却处理。S800. Complete the second cooling process of the first substrate in the second cooling chamber 600.
在一个实施例中，第二冷却腔室600设置于第二工艺腔室300与转运机构500之间，并且，第二冷却腔室600与第二工艺腔室300连通。如此，能够对从转运机构500处上料而来的第一基体进行第二冷却处理，使得该第一基体的温度降低至第二预设温度值，不会破坏非晶硅膜层，保证产品质量。同时，当不需要利用转运机构500对第一基体进行转运时，利用第二冷却腔室600对完成第一冷却处理的第一基体进行进一步第二冷却处理，冷却效果更好，在进行铜种子层的沉积时能够更有效的避免对非晶硅膜层造成破坏。In one embodiment, the second cooling chamber 600 is disposed between the second process chamber 300 and the transfer mechanism 500 , and the second cooling chamber 600 communicates with the second process chamber 300 . In this way, the first substrate loaded from the transfer mechanism 500 can be subjected to the second cooling process, so that the temperature of the first substrate is reduced to the second preset temperature value, without damaging the amorphous silicon film layer, ensuring that the product quality. At the same time, when there is no need to use the transfer mechanism 500 to transport the first substrate, the second cooling chamber 600 is used to further perform a second cooling process on the first substrate that has completed the first cooling process. The cooling effect is better, and the copper seeds are processed The deposition of the layer can more effectively avoid damage to the amorphous silicon film layer.
在一个实施例中，在S800中，包括S810、将第一基体进行至少两个阶段的第二冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度降低至第二预设温度值。In one embodiment, S800 includes S810, subjecting the first substrate to at least two stages of second cooling, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate decreases. to the second preset temperature value.
在一个实施例中，第二冷却腔室600包括至少两个相互连通的第二冷却分腔610，并且，沿第一基体的输送方向，后一个第二冷却分腔610的冷却功率大于前一个第二冷却分腔610的冷却功率。如此，能够对第一基体进行至少两个阶段的第二冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一基体的温度逐步降低至第二预设温度值，不仅能够保证第一基体的降温效果，而且能够避免因冷却过快而对膜层造成影响。In one embodiment, the second cooling chamber 600 includes at least two interconnected second cooling sub-cavities 610, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity 610 is greater than that of the previous one. The cooling power of the second cooling sub-chamber 610. In this way, at least two stages of the second cooling process can be performed on the first base body, so that the cooling power of the later stage is greater than the cooling power of the previous stage, until the temperature of the first base body gradually decreases to the second preset temperature value, not only It can ensure the cooling effect of the first substrate and avoid the impact on the film layer due to excessive cooling.
在一个实施例中，在S810中，包括S811、将第一基体依次送入至少两个第二冷却分腔610内依次进行冷却，且沿第一基体的输送方向，后一个第二冷却分腔610的冷却功率大于前一个第二冷却分腔610的冷却功率。如此，能够对第一基体实现递进式冷却降温，使得第一基体的温度逐步降低至第二预设温度值。In one embodiment, in S810, including S811, the first substrate is sequentially sent into at least two second cooling sub-cavities 610 for sequential cooling, and along the conveying direction of the first substrate, the latter second cooling sub-cavity The cooling power of 610 is greater than the cooling power of the previous second cooling sub-cavity 610 . In this way, progressive cooling of the first substrate can be achieved, so that the temperature of the first substrate gradually decreases to the second preset temperature value.
S900、将完成第一冷却处理后的第一基体在第二工艺腔室300内完成铜种子层的沉积 以得到第一成品。S900. Complete the deposition of the copper seed layer on the first substrate after the first cooling process in the second process chamber 300. to get the first finished product.
在一个实施例中，先在第一冷却腔室200内对第一基体进行第一冷却处理，再将完成了第一冷却处理的第一基体送入第二工艺腔室300内，从而利用第二工艺腔室300对第一基体进行铜种子层的沉积，进而得到第一成品。In one embodiment, a first cooling process is performed on the first substrate in the first cooling chamber 200, and then the first substrate that has completed the first cooling process is sent into the second process chamber 300, thereby utilizing the first cooling process. The second process chamber 300 deposits a copper seed layer on the first substrate to obtain a first finished product.
在一个实施例中，在S900中，包括S910、先对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积；S920、使得完成了一个表面的铜种子层沉积的第一基体经过第二隔离区320，再对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积，从而得到第一成品。如此，完成第一冷却处理的第一基体进入第二工艺腔室300内后，先进入第二镀膜区310而在第二镀膜区310对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积，接着使得完成了一个表面的铜种子层沉积的第一基体经过第二隔离区320，再使得完成了一个表面的铜种子层沉积的第一基体进入第三镀膜区330而在第三镀膜区330完成正面与背面中的另外一个表面的铜种子层的沉积。如此设置，经过第一冷却处理的第一基体在第二镀膜区310完成一个表面的铜种子层沉积，由于第一基体的温度适宜，能够保证沉积效果。由于在第二镀膜区310进行一个表面的铜种子层沉积过程中，第一基体的温度会上升，通过将第一基体先经过第二隔离区320而进行降温冷却，然后再进入第三镀膜区330进行另一个表面的铜种子层沉积，能够有效的保证第三镀膜区330的沉积质量，提升产品品质。In one embodiment, S900 includes S910, first completing the deposition of a copper seed layer on one of the front and back surfaces of the first substrate; S920, completing the deposition of the copper seed layer on one surface of the first substrate. After passing through the second isolation area 320, a copper seed layer is deposited on the other surface of the front and back surfaces of the first substrate, thereby obtaining the first finished product. In this way, after the first substrate that has completed the first cooling process enters the second process chamber 300, it first enters the second coating area 310, and in the second coating area 310, copper is completed on one of the front and back surfaces of the first substrate. The seed layer is deposited, and then the first substrate with the copper seed layer deposited on one surface passed through the second isolation area 320, and then the first substrate with the copper seed layer deposited on one surface entered the third plating area 330 and then The third plating area 330 completes the deposition of the copper seed layer on the other surface of the front surface and the back surface. With this arrangement, the first substrate that has undergone the first cooling process completes the copper seed layer deposition on one surface in the second coating area 310. Since the temperature of the first substrate is appropriate, the deposition effect can be ensured. Since the temperature of the first substrate will rise during the deposition of a surface copper seed layer in the second coating area 310, the first substrate is cooled by first passing through the second isolation area 320, and then entering the third coating area. 330 performs copper seed layer deposition on another surface, which can effectively ensure the deposition quality of the third coating area 330 and improve product quality.
S1000、将第一成品在第三冷却腔室800内完成第三冷却处理。S1000. Complete the third cooling process of the first finished product in the third cooling chamber 800.
在一个实施例中，第三冷却腔室800设置于第二工艺腔室300的下一工序位置，并且，第三冷却腔室800与第二工艺腔室300连通。如此设置，在第二工艺腔室300内，第一基体完成铜种子层的沉积而得到第一成品过程中会使得第一成品温度上升，利用第三冷却腔室800对第一成品进行第三冷却处理而使得第一成品的温度降低至第三预设温度值，能够避免第一成品直接暴露在空气中而被氧化。In one embodiment, the third cooling chamber 800 is disposed at the next process position of the second process chamber 300 , and the third cooling chamber 800 is connected with the second process chamber 300 . With this arrangement, in the second process chamber 300, when the first substrate completes the deposition of the copper seed layer to obtain the first finished product, the temperature of the first finished product will rise. The third cooling chamber 800 is used to perform the third step on the first finished product. The cooling process reduces the temperature of the first finished product to the third preset temperature value, thereby preventing the first finished product from being directly exposed to the air and being oxidized.
在一个实施例中，在S1000中，包括S1100、将第一成品进行至少两个阶段的第三冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一成品的温度降低至第三预设温度值。In one embodiment, S1000 includes S1100, subjecting the first finished product to at least two stages of a third cooling process, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first finished product decreases. to the third preset temperature value.
在一个实施例中，第三冷却腔室800包括至少两个相互连通的第三冷却分腔810，并且，沿第一成品的输送方向(如图1及图2的A方向所示)，后一个第三冷却分腔810的冷却功率大于前一个第三冷却分腔810的冷却功率。如此，能够对第一成品进行至少两个阶段的第三冷却处理，使得后一个阶段的冷却功率大于前一个阶段的冷却功率，直至第一成品的温度逐步降低至第三预设温度值，不仅能够保证第一成品的降温效果，而且能够避 免因冷却过快而对膜层造成影响。In one embodiment, the third cooling chamber 800 includes at least two interconnected third cooling sub-chambers 810, and along the conveying direction of the first finished product (as shown in direction A in Figures 1 and 2), The cooling power of a third cooling sub-cavity 810 is greater than the cooling power of the previous third cooling sub-cavity 810 . In this way, at least two stages of the third cooling process can be performed on the first finished product, so that the cooling power of the latter stage is greater than the cooling power of the previous stage, until the temperature of the first finished product gradually decreases to the third preset temperature value, not only It can ensure the cooling effect of the first finished product and avoid Prevent the film from being affected by cooling too quickly.
在一个实施例中，在S1100中，包括S1110、将第一成品依次送入至少两个第三冷却分腔810内依次进行冷却，且沿第一成品的输送方向，后一个第三冷却分腔810的冷却功率大于前一个第三冷却分腔810的冷却功率。如此，能够对第一成品实现递进式冷却降温，使得第一成品的温度逐步降低至第三预设温度值。In one embodiment, in S1100, including S1110, the first finished product is sequentially sent into at least two third cooling sub-chambers 810 for sequential cooling, and along the conveying direction of the first finished product, the last third cooling sub-cavity The cooling power of 810 is greater than the cooling power of the previous third cooling sub-cavity 810 . In this way, progressive cooling can be achieved for the first finished product, so that the temperature of the first finished product gradually decreases to the third preset temperature value.
S2000、将完成第三冷却处理的第一成品在第三缓存腔室900内进行第三缓存处理。S2000. The first finished product that has completed the third cooling process is subjected to the third buffering process in the third buffering chamber 900.
在一个实施例中，第三缓存腔室900设置于第三冷却腔室800的一侧，即第三缓存腔室900位于第三冷却腔室800的下一工序位置，并且，第三缓存腔室900与第三冷却腔室800连通。如此，在生产过程中，若铜种子层的沉积发生异常，则可以将发生异常的第一成品完成第三冷却处理后缓存在第三缓存腔室900内，避免因异常造成停机，使得产线能够顺畅的运行，提高了生产效率；并且，先对第一成品进行第三冷却处理再进行缓存，也能避免各个第三冷却分腔810之间发生串气。In one embodiment, the third cache chamber 900 is disposed on one side of the third cooling chamber 800 , that is, the third cache chamber 900 is located at the next process position of the third cooling chamber 800 , and the third cache chamber 900 is located at the next process position of the third cooling chamber 800 . Chamber 900 communicates with third cooling chamber 800. In this way, during the production process, if an abnormality occurs in the deposition of the copper seed layer, the abnormal first finished product can be cached in the third cache chamber 900 after completing the third cooling process, thereby avoiding downtime caused by the abnormality and causing the production line to It can operate smoothly and improve production efficiency; and, by first performing the third cooling process on the first finished product and then caching, it can also avoid air cross-flow between the third cooling sub-cavities 810 .
上述实施例的铜种子层镀膜工艺，至少具有以下几个优点：1、先在第一工艺腔室100内完成导电薄膜的沉积以得到第一基体，然后将第一基体在第一冷却腔室200内进行充分的第一冷却处理，从而使得第一基体的温度降低至第一预设温度值，再将完成了第一冷却处理后的第一基体在第二工艺腔室300内完成铜种子层的沉积，不仅使得导电薄膜的沉积与铜种子层的沉积之间不会产生相互影响，保证导电薄膜的沉积质量以及铜种子层的沉积质量。2、导电薄膜的沉积与铜种子层的沉积不需更换载具，加工简单、方便，提高了生产效率。3、在第一工艺腔室100内于较高温度下完成导电薄膜的沉积后，在第一冷却腔室200内进行充分的第一冷却处理，最后在第二工艺腔室300内完成铜种子层的沉积，不会破坏非晶硅膜层，保证产品质量。4、在第一工艺腔室100内于较高温度下完成导电薄膜的沉积，在第二工艺腔室300内于较低温度下完成铜种子层的沉积，也不会对膜层的电化学温度性能造成不可逆的影响，保证产品品质。The copper seed layer plating process of the above embodiment has at least the following advantages: 1. First, complete the deposition of the conductive film in the first process chamber 100 to obtain the first substrate, and then place the first substrate in the first cooling chamber. A sufficient first cooling process is performed in 200 to reduce the temperature of the first substrate to a first preset temperature value, and then the first substrate after the first cooling process is completed with copper seeds in the second process chamber 300 The deposition of the conductive film not only prevents the deposition of the conductive film from interfering with the deposition of the copper seed layer, but also ensures the deposition quality of the conductive film and the deposition quality of the copper seed layer. 2. The deposition of the conductive film and the copper seed layer does not require changing the carrier, the processing is simple and convenient, and the production efficiency is improved. 3. After completing the deposition of the conductive film at a higher temperature in the first process chamber 100, perform a sufficient first cooling process in the first cooling chamber 200, and finally complete the copper seeds in the second process chamber 300 The deposition of layers will not damage the amorphous silicon film layer and ensure product quality. 4. Complete the deposition of the conductive film at a higher temperature in the first process chamber 100, and complete the deposition of the copper seed layer at a lower temperature in the second process chamber 300, which will not affect the electrochemistry of the film layer. Temperature performance has an irreversible impact, ensuring product quality.
在一个实施例中，还提供了一种太阳电池，采取上述任意实施例的铜种子层镀膜工艺制得。In one embodiment, a solar cell is also provided, which is manufactured by adopting the copper seed layer plating process of any of the above embodiments.
上述实施例的太阳电池，制作过程中，先在第一工艺腔室100内完成导电薄膜的沉积以得到第一基体，然后将第一基体在第一冷却腔室200内进行充分的第一冷却处理，从而使得第一基体的温度降低至第一预设温度值，再将完成了第一冷却处理后的第一基体在第二工艺腔室300内完成铜种子层的沉积，不仅使得导电薄膜的沉积与铜种子层的沉积之间不会产生相互影响，保证导电薄膜的沉积质量以及铜种子层的沉积质量；而且，导电薄膜的沉积与铜种子层的沉积不需更换载具，加工简单、方便，提高了生产效率；并且，在第 一工艺腔室100内于较高温度下完成导电薄膜的沉积后，在第一冷却腔室200内进行充分的第一冷却处理，最后在第二工艺腔室300内完成铜种子层的沉积，不会破坏非晶硅膜层，保证产品质量；同时，在第一工艺腔室100内于较高温度下完成导电薄膜的沉积，在第二工艺腔室300内于较低温度下完成铜种子层的沉积，也不会对膜层的电化学温度性能造成不可逆的影响，保证产品品质。During the manufacturing process of the solar cell of the above embodiment, the conductive film is first deposited in the first process chamber 100 to obtain the first substrate, and then the first substrate is fully cooled in the first cooling chamber 200 Processing, thereby reducing the temperature of the first substrate to a first preset temperature value, and then completing the deposition of a copper seed layer on the first substrate after completing the first cooling process in the second process chamber 300, not only making the conductive film There will be no interaction between the deposition of the conductive film and the deposition of the copper seed layer, ensuring the deposition quality of the conductive film and the deposition quality of the copper seed layer; moreover, the deposition of the conductive film and the deposition of the copper seed layer do not require changing the carrier, and the processing is simple , convenience, improved production efficiency; and, in the first After completing the deposition of the conductive film at a higher temperature in the first process chamber 100, a sufficient first cooling process is performed in the first cooling chamber 200, and finally the deposition of the copper seed layer is completed in the second process chamber 300. The amorphous silicon film layer will not be damaged, ensuring product quality; at the same time, the deposition of the conductive film is completed in the first process chamber 100 at a higher temperature, and the copper seeds are completed in the second process chamber 300 at a lower temperature. The deposition of the film layer will not have an irreversible impact on the electrochemical temperature performance of the film layer, ensuring product quality.
需要说明的是，“某体”、“某部”可以为对应“构件”的一部分，即“某体”、“某部”与该“构件的其他部分”一体成型制造；也可以与“构件的其他部分”可分离的一个独立的构件，即“某体”、“某部”可以独立制造，再与“构件的其他部分”组合成一个整体。本申请对上述“某体”、“某部”的表达，仅是其中一个实施例，为了方便阅读，而不是对本申请的保护的范围的限制，只要包含了上述特征且作用相同应当理解为是本申请等同的技术方案。It should be noted that "a certain body" and "a certain part" can be part of the corresponding "component", that is, "a certain body" and "a certain part" are integrally formed with the "other parts of the component"; they can also be integrated with the "component" An independent component that can be separated from "other parts", that is, "a certain body" or "a certain part" can be manufactured independently, and then combined with "other parts of the component" to form a whole. The expressions "a certain body" and "a certain part" mentioned above in this application are only one of the embodiments. They are for the convenience of reading and are not intended to limit the scope of protection of this application. As long as the above features are included and the functions are the same, it should be understood as The equivalent technical solution of this application.
需要说明的是，本申请“单元”、“组件”、“机构”、“装置”所包含的构件亦可灵活进行组合，即可根据实际需要进行模块化生产，以方便进行模块化组装。本申请对上述构件的划分，仅是其中一个实施例，为了方便阅读，而不是对本申请的保护的范围的限制，只要包含了上述构件且作用相同应当理解是本申请等同的技术方案。It should be noted that the components included in the "units", "components", "mechanisms" and "devices" in this application can also be flexibly combined, that is, modular production can be carried out according to actual needs to facilitate modular assembly. The division of the above-mentioned components in this application is only one of the embodiments. It is for the convenience of reading and is not intended to limit the scope of protection of this application. As long as the above-mentioned components are included and have the same function, it should be understood that it is an equivalent technical solution of this application.
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。本申请中使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。In the description of this application, it needs to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axis" The orientation or positional relationship indicated by "radial direction", "circumferential direction", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply the device or device referred to. Elements must have a specific orientation, be constructed and operate in a specific orientation and therefore are not to be construed as limitations on the application. As used in this application, the term "and/or" includes any and all combinations of one or more of the associated listed items.
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited.
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。In this application, unless otherwise clearly stated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. , or integrated into one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interactive relationship between two elements, unless otherwise specified limitations. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第 一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。In this application, unless otherwise expressly stated and limited, a first feature "on" or "below" a second feature may be a third feature. The first and second features are in direct contact, or the first and second features are in indirect contact through an intermediary. Furthermore, the terms "above", "above" and "above" the first feature is above the second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "below" and "beneath" the first feature to the second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature has a smaller horizontal height than the second feature.
需要说明的是，当元件被称为“固定于”、“设置于”、“固设于”或“安设于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。进一步地，当一个元件被认为是“固定传动连接”另一个元件，二者可以是可拆卸连接方式的固定，也可以不可拆卸连接的固定，能够实现动力传递即可，如套接、卡接、一体成型固定、焊接等，在现有技术中可以实现，在此不再累赘。当元件与另一个元件相互垂直或近似垂直是指二者的理想状态是垂直，但是因制造及装配的影响，可以存在一定的垂直误差。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。It should be noted that when an element is referred to as being "fixed to", "disposed on", "anchored to" or "mounted on" another element, it can be directly on the other element or intervening elements may also be present. . When an element is said to be "connected" to another element, it can be directly connected to the other element or there may also be intervening elements present. Furthermore, when one element is considered to be a "fixed transmission connection" to another element, the two can be fixed in a detachable connection, or they can be fixed in a non-detachable connection, as long as they can realize power transmission, such as socket and snap connection. , integrated molding fixation, welding, etc. can be realized in the existing technology, and will not be redundant here. When a component is perpendicular or approximately perpendicular to another component, it means that the ideal state of the two components is perpendicular. However, due to the influence of manufacturing and assembly, there may be a certain vertical error. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation manner. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
还应当理解的是，在解释元件的连接关系或位置关系时，尽管没有明确描述，但连接关系和位置关系解释为包括误差范围，该误差范围应当由本领域技术人员所确定的特定值可接受的偏差范围内。例如，“大约”、“近似”或“基本上”可以意味着一个或多个标准偏差内，在此不作限定。It should also be understood that when explaining the connection relationship or positional relationship of elements, although not explicitly described, the connection relationship and positional relationship are interpreted to include an error range, which error range should be acceptable for a specific value determined by a person skilled in the art. within the deviation range. For example, "about," "approximately," or "substantially" may mean within one or more standard deviations, without limitation.
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-described embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, All should be considered to be within the scope of this manual.
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。 The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims (30)

  1. 一种铜种子层镀膜工艺，其特征在于，包括以下步骤：A copper seed layer plating process, characterized by including the following steps:
    在第一工艺腔室内完成导电薄膜的沉积以得到第一基体；Complete the deposition of the conductive film in the first process chamber to obtain the first substrate;
    将所述第一基体在第一冷却腔室内完成第一冷却处理；Complete the first cooling treatment of the first substrate in the first cooling chamber;
    将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品。The first substrate that has completed the first cooling treatment is deposited with a copper seed layer in a second process chamber to obtain a first finished product.
  2. 根据权利要求1所述的铜种子层镀膜工艺，其特征在于，在将所述第一基体在第一冷却腔室内完成第一冷却处理的步骤中，包括：The copper seed layer plating process according to claim 1, wherein the step of completing the first cooling treatment of the first substrate in the first cooling chamber includes:
    将所述第一基体进行至少两个阶段的第一冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一基体的温度降低至第一预设温度值。The first substrate is subjected to at least two stages of first cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a first preset temperature value.
  3. 根据权利要求2所述的铜种子层镀膜工艺，其特征在于，将所述第一基体进行至少两个阶段的第一冷却处理的步骤中，包括：The copper seed layer plating process according to claim 2, wherein the step of subjecting the first substrate to at least two stages of first cooling treatment includes:
    将所述第一基体依次送入至少两个第一冷却分腔内先后进行冷却，且沿所述第一基体的输送方向，后一个所述第一冷却分腔的冷却功率大于前一个所述第一冷却分腔的冷却功率。The first substrate is sequentially sent into at least two first cooling sub-cavities for cooling, and along the conveying direction of the first substrate, the cooling power of the latter first cooling sub-cavity is greater than that of the previous one. The cooling power of the first cooling sub-cavity.
  4. 根据权利要求1所述的铜种子层镀膜工艺，其特征在于，在第一工艺腔室内完成导电薄膜的沉积以得到第一基体步骤之后，将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之前，还包括：对所述第一基体进行转运处理。The copper seed layer plating process according to claim 1, characterized in that after completing the deposition of the conductive film in the first process chamber to obtain the first substrate, the first substrate after completing the first cooling treatment is Before completing the deposition of the copper seed layer in the second process chamber to obtain the first finished product, the step further includes: transporting the first substrate.
  5. 根据权利要求4所述的铜种子层镀膜工艺，其特征在于，在对所述第一基体进行转运处理的步骤中，包括：将完成第一冷却处理后的所述第一基体进行转运处理。The copper seed layer plating process according to claim 4, wherein the step of transporting the first substrate includes transporting the first substrate after the first cooling process.
  6. 根据权利要求5所述的铜种子层镀膜工艺，其特征在于，将所述第一基体在第一冷却腔室内完成第一冷却处理步骤之后，对所述第一基体进行转运处理步骤之前，还包括：The copper seed layer plating process according to claim 5, characterized in that, after completing the first cooling treatment step of the first substrate in the first cooling chamber and before performing the transfer treatment step on the first substrate, include:
    将完成第一冷却处理后的所述第一基体在第一缓存腔室内进行第一缓存处理。The first substrate that has completed the first cooling process is subjected to a first buffering process in the first buffering chamber.
  7. 根据权利要求5所述的铜种子层镀膜工艺，其特征在于，将完成第一冷却处理后的所述第一基体进行转运处理的步骤之后，在所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之前，还包括：将所述第一基体在第二冷却腔室内完成第二冷却处理。The copper seed layer plating process according to claim 5, characterized in that, after the step of transferring the first substrate after the first cooling treatment, the first substrate is completed in the second process chamber. Before depositing the copper seed layer to obtain the first finished product, the step further includes: completing a second cooling process on the first substrate in a second cooling chamber.
  8. 根据权利要求7所述的铜种子层镀膜工艺，其特征在于，在将所述第一基体在第二冷却腔室内完成第二冷却处理的步骤中，包括： The copper seed layer plating process according to claim 7, wherein the step of completing the second cooling treatment of the first substrate in the second cooling chamber includes:
    将所述第一基体进行至少两个阶段的第二冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一基体的温度降低至第二预设温度值。The first substrate is subjected to at least two stages of second cooling treatment, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first substrate is reduced to a second preset temperature value.
  9. 根据权利要求8所述的铜种子层镀膜工艺，其特征在于，将所述第一基体进行至少两个阶段的第二冷却处理的步骤中，包括：The copper seed layer plating process according to claim 8, wherein the step of subjecting the first substrate to at least two stages of second cooling treatment includes:
    将所述第一基体依次送入至少两个第二冷却分腔内依次进行冷却，且沿所述第一基体的输送方向，后一个所述第二冷却分腔的冷却功率大于前一个所述第二冷却分腔的冷却功率。The first substrate is sent into at least two second cooling sub-cavities in sequence for cooling, and along the conveying direction of the first substrate, the cooling power of the latter second cooling sub-cavity is greater than that of the previous one. The cooling power of the second cooling sub-cavity.
  10. 根据权利要求7所述的铜种子层镀膜工艺，其特征在于，将完成第一冷却处理后的所述第一基体进行转运处理的步骤之后，将所述第一基体在第二冷却腔室内完成第二冷却处理的步骤之前，还包括：将所述第一基体在第二缓存腔室内进行第二缓存处理。The copper seed layer plating process according to claim 7, characterized in that, after the step of transferring the first substrate after the first cooling treatment, the first substrate is completed in the second cooling chamber. Before the step of the second cooling treatment, it also includes: subjecting the first substrate to a second caching treatment in a second caching chamber.
  11. 根据权利要求1至10任一项所述的铜种子层镀膜工艺，其特征在于，将完成第一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤之后，还包括：The copper seed layer plating process according to any one of claims 1 to 10, characterized in that, the first substrate after completing the first cooling treatment is deposited with a copper seed layer in a second process chamber to obtain the third After the finished product step, it also includes:
    将所述第一成品在第三冷却腔室内完成第三冷却处理。The first finished product is subjected to a third cooling process in a third cooling chamber.
  12. 根据权利要求11所述的铜种子层镀膜工艺，其特征在于，在将所述第一成品在第三冷却腔室内完成第三冷却处理的步骤中，包括：The copper seed layer plating process according to claim 11, wherein the step of completing the third cooling treatment of the first finished product in the third cooling chamber includes:
    将所述第一成品进行至少两个阶段的第三冷却处理，且后一个阶段的冷却功率大于前一个阶段的冷却功率，直至所述第一成品的温度降低至第三预设温度值。The first finished product is subjected to at least two stages of a third cooling process, and the cooling power of the latter stage is greater than the cooling power of the previous stage until the temperature of the first finished product is reduced to a third preset temperature value.
  13. 根据权利要求12所述的铜种子层镀膜工艺，其特征在于，将所述第一成品进行至少两个阶段的第三冷却处理的步骤中，包括：The copper seed layer plating process according to claim 12, wherein the step of subjecting the first finished product to at least two stages of third cooling treatment includes:
    将所述第一成品依次送入至少两个第三冷却分腔内依次进行冷却，且沿所述第一成品的输送方向，后一个所述第三冷却分腔的冷却功率大于前一个所述第三冷却分腔的冷却功率。The first finished product is sent into at least two third cooling sub-cavities in sequence for cooling, and along the conveying direction of the first finished product, the cooling power of the latter third cooling sub-cavity is greater than that of the previous one. The cooling power of the third cooling sub-cavity.
  14. 根据权利要求12所述的铜种子层镀膜工艺，其特征在于，在将所述第一成品在第三冷却腔室内完成第三冷却处理的步骤之后，还包括：The copper seed layer plating process according to claim 12, characterized in that, after completing the third cooling process of the first finished product in the third cooling chamber, it further includes:
    将完成第三冷却处理的所述第一成品在第三缓存腔室内进行第三缓存处理。The first finished product that has completed the third cooling process is subjected to a third buffering process in a third buffering chamber.
  15. 根据权利要求1至10任一项所述的铜种子层镀膜工艺，其特征在于，在第一工艺腔室内完成导电薄膜的沉积以得到第一基体的步骤中，包括：The copper seed layer plating process according to any one of claims 1 to 10, wherein the step of completing the deposition of the conductive film in the first process chamber to obtain the first substrate includes:
    使待镀膜件先经过第一隔离区后再在第一镀膜区对所述待镀膜件沉积导电薄膜以得到第一基体。The component to be coated is first passed through the first isolation area, and then a conductive film is deposited on the component to be coated in the first coating area to obtain the first substrate.
  16. 根据权利要求1至10任一项所述的铜种子层镀膜工艺，其特征在于，将完成第 一冷却处理后的所述第一基体在第二工艺腔室内完成铜种子层的沉积以得到第一成品的步骤中，包括：The copper seed layer plating process according to any one of claims 1 to 10, characterized in that the first The step of completing the deposition of a copper seed layer on the cooled first substrate in the second process chamber to obtain the first finished product includes:
    先对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积；First, complete the deposition of the copper seed layer on one of the front and back surfaces of the first substrate;
    使得完成了一个表面的铜种子层沉积的第一基体经过第二隔离区，再对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积，从而得到所述第一成品。The first substrate on which the copper seed layer has been deposited on one surface is passed through the second isolation area, and then the copper seed layer is deposited on the other surface of the front and back surfaces of the first substrate, thereby obtaining the first finished product.
  17. 一种太阳电池，其特征在于，采取如权利要求1至16任一项所述的铜种子层镀膜工艺制得。A solar cell, characterized in that it is produced by adopting the copper seed layer plating process as described in any one of claims 1 to 16.
  18. 一种铜种子层镀膜装置，其特征在于，包括：A copper seed layer coating device, characterized by including:
    第一工艺腔室，所述第一工艺腔室用于完成导电薄膜的沉积以得到第一基体；A first process chamber, the first process chamber is used to complete the deposition of the conductive film to obtain the first substrate;
    第一冷却腔室，所述第一冷却腔室用于对所述第一基体完成第一冷却处理，且所述第一冷却腔室与所述第一工艺腔室连通；及A first cooling chamber, the first cooling chamber is used to complete the first cooling process of the first substrate, and the first cooling chamber is connected with the first process chamber; and
    第二工艺腔室，所述第二工艺腔室用于将完成第一冷却处理后的所述第一基体完成铜种子层的沉积以得到第一成品，且所述第二工艺腔室与所述第一冷却腔室连通。A second process chamber, the second process chamber is used to deposit a copper seed layer on the first substrate after the first cooling process to obtain the first finished product, and the second process chamber is connected to the first substrate. The first cooling chamber is connected.
  19. 根据权利要求18所述的铜种子层镀膜装置，其特征在于，所述第一冷却腔室包括至少两个相互连通的第一冷却分腔，且沿所述第一基体的输送方向，后一个所述第一冷却分腔的冷却功率大于前一个所述第一冷却分腔的冷却功率。The copper seed layer coating device according to claim 18, wherein the first cooling chamber includes at least two interconnected first cooling sub-chambers, and along the conveying direction of the first substrate, the latter one The cooling power of the first cooling sub-cavity is greater than the cooling power of the previous first cooling sub-cavity.
  20. 根据权利要求18所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装置还包括转运机构，所述转运机构设置于所述第一冷却腔室与所述第二工艺腔室之间，所述转运机构用于对所述第一基体进行转运处理。The copper seed layer coating device according to claim 18, characterized in that the copper seed layer coating device further includes a transfer mechanism, the transfer mechanism is disposed in the first cooling chamber and the second process chamber. The transfer mechanism is used to transfer the first substrate.
  21. 根据权利要求20所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装置还包括第一缓存腔室，所述第一缓存腔室用于对所述第一基体进行第一缓存处理，所述第一缓存腔室设置于所述第一冷却腔室与所述转运机构之间，且所述第一缓存腔室与所述第一冷却腔室连通。The copper seed layer coating device according to claim 20, characterized in that the copper seed layer coating device further includes a first cache chamber, the first cache chamber is used to perform a first step on the first substrate. Caching processing, the first cache chamber is disposed between the first cooling chamber and the transfer mechanism, and the first cache chamber is connected with the first cooling chamber.
  22. 根据权利要求20所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装置还包括第二冷却腔室，所述第二冷却腔室用于对所述第一基体进行第二冷却处理，所述第二冷却腔室设置于所述第二工艺腔室与所述转运机构之间，且所述第二冷却腔室与所述第二工艺腔室连通。The copper seed layer coating device according to claim 20, characterized in that the copper seed layer coating device further includes a second cooling chamber, the second cooling chamber is used to perform a second step on the first substrate. Cooling process, the second cooling chamber is disposed between the second process chamber and the transfer mechanism, and the second cooling chamber is connected with the second process chamber.
  23. 根据权利要求22所述的铜种子层镀膜装置，其特征在于，所述第二冷却腔室包括至少两个相互连通的第二冷却分腔，且沿所述第一基体的输送方向，后一个所述第二冷却分腔的冷却功率大于前一个所述第二冷却分腔的冷却功率。The copper seed layer coating device according to claim 22, characterized in that the second cooling chamber includes at least two second cooling sub-chambers connected to each other, and along the conveying direction of the first substrate, the latter one The cooling power of the second cooling sub-cavity is greater than the cooling power of the previous second cooling sub-cavity.
  24. 根据权利要求22所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装 置还包括第二缓存腔室，所述第二缓存腔室用于对所述第一基体进行第二缓存处理，所述第二缓存腔室设置于所述第二冷却腔室与所述转运机构之间，且所述第二缓存腔室与所述第二冷却腔室连通。The copper seed layer coating device according to claim 22, wherein the copper seed layer coating device The device also includes a second cache chamber, the second cache chamber is used to perform a second cache process on the first substrate, the second cache chamber is disposed between the second cooling chamber and the transfer between the mechanisms, and the second buffer chamber is connected with the second cooling chamber.
  25. 根据权利要求18所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装置还包括第三冷却腔室，所述第三冷却腔室用于对第一成品完成第三冷却处理，且所述第三冷却腔室与所述第二工艺腔室连通。The copper seed layer coating device according to claim 18, characterized in that the copper seed layer coating device further includes a third cooling chamber, the third cooling chamber is used to complete a third cooling process on the first finished product. , and the third cooling chamber is connected with the second process chamber.
  26. 根据权利要求25所述的铜种子层镀膜装置，其特征在于，所述第三冷却腔室包括至少两个相互连通的第三冷却分腔，且沿所述第一基体的输送方向，后一个所述第三冷却分腔的冷却功率大于前一个所述第三冷却分腔的冷却功率。The copper seed layer coating device according to claim 25, wherein the third cooling chamber includes at least two interconnected third cooling sub-chambers, and along the conveying direction of the first substrate, the latter one The cooling power of the third cooling sub-cavity is greater than the cooling power of the previous third cooling sub-cavity.
  27. 根据权利要求25所述的铜种子层镀膜装置，其特征在于，所述铜种子层镀膜装置还包括第三缓存腔室，所述第三缓存腔室用于对所述第一成品进行第三缓存处理，所述第三缓存腔室设置于所述第三冷却腔室一侧，且所述第三缓存腔室与所述第三冷却腔室连通。The copper seed layer coating device according to claim 25, characterized in that the copper seed layer coating device further includes a third cache chamber, the third cache chamber is used to perform a third process on the first finished product. For cache processing, the third cache chamber is disposed on one side of the third cooling chamber, and the third cache chamber is connected with the third cooling chamber.
  28. 根据权利要求18至27任一项所述的铜种子层镀膜装置，其特征在于，所述第一工艺腔室包括相互连通的第一隔离区及第一镀膜区，所述第一镀膜区相对于所述第一隔离区靠近所述第一冷却腔室设置，且所述第一镀膜区与所述第一冷却腔室连通。The copper seed layer plating device according to any one of claims 18 to 27, wherein the first process chamber includes a first isolation area and a first plating area that are connected to each other, and the first plating area is opposite to The first isolation area is disposed close to the first cooling chamber, and the first coating area is connected to the first cooling chamber.
  29. 根据权利要求18至27任一项所述的铜种子层镀膜装置，其特征在于，所述第二工艺腔室包括第二镀膜区、第二隔离区及第三镀膜区，所述第二隔离区位于所述第二镀膜区与所述第三镀膜区之间，且所述第二镀膜区及所述第三镀膜区均与所述第二隔离区相连通，所述第二镀膜区与所述第一冷却腔室连通并用于对第一基体的正面与背面中的其中一个表面完成铜种子层的沉积，所述第三镀膜区用于对第一基体的正面与背面中的另外一个表面完成铜种子层的沉积。The copper seed layer plating device according to any one of claims 18 to 27, wherein the second process chamber includes a second plating area, a second isolation area and a third plating area, and the second isolation area The area is located between the second coating area and the third coating area, and both the second coating area and the third coating area are connected to the second isolation area, and the second coating area is connected to the second isolation area. The first cooling chamber is connected and used to complete the deposition of a copper seed layer on one of the front and back surfaces of the first substrate, and the third coating area is used to deposit the copper seed layer on the other one of the front and back surfaces of the first substrate. The copper seed layer is deposited on the surface.
  30. 一种太阳电池生产设备，其特征在于，包括如权利要求18至29任一项所述的铜种子层镀膜装置。 A solar cell production equipment, characterized by including the copper seed layer coating device according to any one of claims 18 to 29.
PCT/CN2023/077892 2022-08-09 2023-02-23 Solar cell, production device therefor, and copper seed layer coating process and apparatus WO2024031958A1 (en)

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