CN113093470A - 基于平面型全耗尽绝缘体上硅器件的图形解析能力的提升方法 - Google Patents
基于平面型全耗尽绝缘体上硅器件的图形解析能力的提升方法 Download PDFInfo
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- CN113093470A CN113093470A CN202110211492.9A CN202110211492A CN113093470A CN 113093470 A CN113093470 A CN 113093470A CN 202110211492 A CN202110211492 A CN 202110211492A CN 113093470 A CN113093470 A CN 113093470A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004458 analytical method Methods 0.000 title claims abstract description 8
- 239000012212 insulator Substances 0.000 title claims abstract description 6
- 238000012216 screening Methods 0.000 claims abstract description 9
- 238000012937 correction Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000013461 design Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004429 Calibre Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
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Priority Applications (1)
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CN202110211492.9A CN113093470A (zh) | 2021-02-25 | 2021-02-25 | 基于平面型全耗尽绝缘体上硅器件的图形解析能力的提升方法 |
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CN202110211492.9A CN113093470A (zh) | 2021-02-25 | 2021-02-25 | 基于平面型全耗尽绝缘体上硅器件的图形解析能力的提升方法 |
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CN113093470A true CN113093470A (zh) | 2021-07-09 |
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CN202110211492.9A Pending CN113093470A (zh) | 2021-02-25 | 2021-02-25 | 基于平面型全耗尽绝缘体上硅器件的图形解析能力的提升方法 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804340A (en) * | 1996-12-23 | 1998-09-08 | Lsi Logic Corporation | Photomask inspection method and inspection tape therefor |
JP2000100692A (ja) * | 1998-09-21 | 2000-04-07 | Toshiba Corp | 設計パターン補正方法 |
TW499707B (en) * | 2001-08-14 | 2002-08-21 | United Microelectronics Corp | Method of optical proximity correction |
US20030044692A1 (en) * | 2001-08-29 | 2003-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical proximity correction verification mask |
CN101105633A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 光学近似修正的方法及其光掩膜图案 |
CN103163727A (zh) * | 2011-12-12 | 2013-06-19 | 无锡华润上华科技有限公司 | 一种掩膜图案的修正方法 |
CN103311236A (zh) * | 2012-03-14 | 2013-09-18 | 台湾积体电路制造股份有限公司 | 用于减少拐角圆化的具有光学邻近度校正的切分拆分 |
CN113614638A (zh) * | 2019-03-21 | 2021-11-05 | Asml荷兰有限公司 | 用于机器学习辅助的光学邻近效应误差校正的训练方法 |
-
2021
- 2021-02-25 CN CN202110211492.9A patent/CN113093470A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804340A (en) * | 1996-12-23 | 1998-09-08 | Lsi Logic Corporation | Photomask inspection method and inspection tape therefor |
JP2000100692A (ja) * | 1998-09-21 | 2000-04-07 | Toshiba Corp | 設計パターン補正方法 |
TW499707B (en) * | 2001-08-14 | 2002-08-21 | United Microelectronics Corp | Method of optical proximity correction |
US20030044692A1 (en) * | 2001-08-29 | 2003-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical proximity correction verification mask |
CN101105633A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 光学近似修正的方法及其光掩膜图案 |
CN103163727A (zh) * | 2011-12-12 | 2013-06-19 | 无锡华润上华科技有限公司 | 一种掩膜图案的修正方法 |
CN103311236A (zh) * | 2012-03-14 | 2013-09-18 | 台湾积体电路制造股份有限公司 | 用于减少拐角圆化的具有光学邻近度校正的切分拆分 |
CN113614638A (zh) * | 2019-03-21 | 2021-11-05 | Asml荷兰有限公司 | 用于机器学习辅助的光学邻近效应误差校正的训练方法 |
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Effective date of registration: 20220810 Address after: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant after: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |