CN113078108A - 晶片加工方法和晶片加工装置 - Google Patents
晶片加工方法和晶片加工装置 Download PDFInfo
- Publication number
- CN113078108A CN113078108A CN202110008119.3A CN202110008119A CN113078108A CN 113078108 A CN113078108 A CN 113078108A CN 202110008119 A CN202110008119 A CN 202110008119A CN 113078108 A CN113078108 A CN 113078108A
- Authority
- CN
- China
- Prior art keywords
- wafer
- laser beam
- unit
- shock wave
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 230000035939 shock Effects 0.000 claims abstract description 57
- 239000007788 liquid Substances 0.000 claims description 85
- 230000006378 damage Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000001902 propagating effect Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000001066 destructive effect Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020000452A JP7436212B2 (ja) | 2020-01-06 | 2020-01-06 | ウエーハ加工方法、及びウエーハ加工装置 |
JP2020-000452 | 2020-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113078108A true CN113078108A (zh) | 2021-07-06 |
Family
ID=76609386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110008119.3A Pending CN113078108A (zh) | 2020-01-06 | 2021-01-05 | 晶片加工方法和晶片加工装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7436212B2 (ja) |
KR (1) | KR20210088422A (ja) |
CN (1) | CN113078108A (ja) |
TW (1) | TW202127530A (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0839500A (ja) * | 1994-07-29 | 1996-02-13 | Hitachi Ltd | 基板製造法 |
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
JP3621587B2 (ja) | 1998-08-20 | 2005-02-16 | 島田理化工業株式会社 | 洗浄装置および洗浄方法 |
JP2007313549A (ja) | 2006-05-29 | 2007-12-06 | Toshiba Corp | 衝撃波発生装置、表面処理方法、非破壊検査方法および治療方法 |
JP4478184B2 (ja) | 2008-01-17 | 2010-06-09 | 株式会社レーザーシステム | レーザ割断方法およびレーザ加工装置 |
JP5513272B2 (ja) | 2010-06-15 | 2014-06-04 | 株式会社ディスコ | チャックテーブルに保持された被加工物の高さ位置計測装置およびレーザー加工機 |
US9102007B2 (en) | 2013-08-02 | 2015-08-11 | Rofin-Sinar Technologies Inc. | Method and apparatus for performing laser filamentation within transparent materials |
-
2020
- 2020-01-06 JP JP2020000452A patent/JP7436212B2/ja active Active
- 2020-12-22 TW TW109145547A patent/TW202127530A/zh unknown
- 2020-12-23 KR KR1020200182004A patent/KR20210088422A/ko active Search and Examination
-
2021
- 2021-01-05 CN CN202110008119.3A patent/CN113078108A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2021111640A (ja) | 2021-08-02 |
JP7436212B2 (ja) | 2024-02-21 |
TW202127530A (zh) | 2021-07-16 |
KR20210088422A (ko) | 2021-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10658171B2 (en) | Wafer processing apparatus | |
CN100577341C (zh) | 激光束加工机 | |
CN101961817A (zh) | 光学***和激光加工装置 | |
KR20160067783A (ko) | 웨이퍼의 생성 방법 | |
JP2016197699A (ja) | ウエーハの生成方法 | |
KR20170028426A (ko) | 2차원의 결정질 기판, 특히 반도체 기판의 레이저 기반 가공을 위한 방법 및 장치 | |
JP2006130691A (ja) | 脆性材料の割断方法とその装置 | |
CN112996628A (zh) | 激光加工装置及激光加工方法 | |
JP5985896B2 (ja) | ウエーハの加工方法およびレーザー加工装置 | |
TW201635357A (zh) | 晶圓的加工方法 | |
JP2005135964A (ja) | ウエーハの分割方法 | |
JP6472332B2 (ja) | ウエーハの生成方法 | |
KR20160086263A (ko) | 웨이퍼의 가공 방법 | |
KR20210095025A (ko) | 웨이퍼 생성 방법, 및 웨이퍼 생성 장치 | |
US11721584B2 (en) | Wafer processing method including crushed layer and wafer processing apparatus | |
CN113078108A (zh) | 晶片加工方法和晶片加工装置 | |
JP2016042516A (ja) | ウエーハの加工方法 | |
KR102537095B1 (ko) | 레이저 가공 장치 및 레이저 가공 방법 | |
JP7408378B2 (ja) | ウエーハ生成方法、及びウエーハ生成装置 | |
JP6552948B2 (ja) | ウエーハの加工方法、及び加工装置 | |
US20210398856A1 (en) | Laser processing method | |
JP2007319921A (ja) | レーザ加工装置およびレーザ加工方法 | |
JP2016058429A (ja) | ウエーハの加工方法 | |
KR102623097B1 (ko) | 레이저 드릴링 장치 | |
TWI825210B (zh) | 雷射加工裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |