CN113035843B - Structure and method for monitoring fin height - Google Patents

Structure and method for monitoring fin height Download PDF

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Publication number
CN113035843B
CN113035843B CN202011390869.3A CN202011390869A CN113035843B CN 113035843 B CN113035843 B CN 113035843B CN 202011390869 A CN202011390869 A CN 202011390869A CN 113035843 B CN113035843 B CN 113035843B
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word line
fin
region
substrate
height
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CN113035843A (en
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纪婉韵
靳怡君
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Winbond Electronics Corp
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Winbond Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention provides a fin portion height monitoring structure and a fin portion height monitoring method. The fin height monitoring structure comprises a substrate, a plurality of isolation structures, a first word line and a second word line. The substrate includes a first region and a second region. The isolation structure is located in the substrate of the first region, and defines at least one active region. The substrate in the active region has a fin higher than the isolation structure. The first word line is located on the isolation structure and the fin portion of the first region. The second word line is located on the substrate of the second region. The fin height monitoring structure can effectively and timely monitor the fin height.

Description

Structure and method for monitoring fin height
Technical Field
The present invention relates to a semiconductor device monitoring structure and a semiconductor device monitoring method, and more particularly, to a fin height monitoring structure and a fin height monitoring method.
Background
The fin height of the semiconductor has a very large influence on the threshold voltage (threshold voltage), so that the fin height change has to be monitored during the manufacturing process. However, the current fin height monitoring method cannot effectively and timely monitor the fin height, and often needs to be verified and quantified by related tools such as physical fault analysis (physical failure analysis, PFA), so that the improvement process of the manufacturing process cannot be shortened.
Disclosure of Invention
The invention provides a fin height monitoring structure and a fin height monitoring method, which can effectively and timely monitor the fin height.
The invention provides a fin height monitoring structure, which comprises a substrate, a plurality of isolation structures, a first word line and a second word line. The substrate includes a first region and a second region. The isolation structure is located in the substrate of the first region, and defines at least one active region. The substrate in the active region has a fin higher than the isolation structure. The first word line is located on the isolation structure and the fin portion of the first region. The second word line is located on the substrate of the second region.
The invention provides a fin height monitoring method, which comprises the following steps. The fin height monitoring structure is provided. A first resistance value of the first word line is measured. A second resistance value of the second word line is measured. The fin height is monitored by the first resistance value and the second resistance value.
Based on the above, in the fin height monitoring structure and the fin height monitoring method provided by the invention, the first word line is located on the isolation structure of the first region and the fin of the substrate, so that the first resistance value of the first word line is affected by the distance from the top of the first word line to the top of the isolation structure and the distance from the top of the first word line to the top of the substrate. In addition, the second word line is located on the substrate of the second region, so that the second resistance value of the second word line is only affected by the distance from the top of the second word line to the top of the substrate. Therefore, the fin height can be monitored through the relativity of the first resistance value and the second resistance value, and the fin height can be effectively and timely monitored.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a top view of a fin height monitoring structure according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along section lines I-I 'and II-II' of FIG. 1;
fig. 3 is a flowchart illustrating a method for fin height monitoring according to an embodiment of the present invention.
Reference numerals illustrate:
10: monitoring structure for fin height
100: substrate
100a: fin part
102: isolation structure
AA1, AA2: active region
D1, D2, D3: direction of extension
d1, d2: distance of
H: height of (1)
L: length of
R1: first zone
R2: second zone
S100, S102, S104, S106, S108: step (a)
SL: cutting path
T: ditch groove
W: width of (L)
WL1, WL2: word line
Detailed Description
Referring to fig. 1 and 2, a fin height monitor structure 10 includes a substrate 100, a plurality of isolation structures 102, a word line WL1 and a word line WL2. The substrate 100 includes a first region R1 and a second region R2. The trenches T may be located in the substrate 100 of the first region R1. The substrate 100 is, for example, a semiconductor substrate 100 such as a silicon substrate. The first region R1 and the second region R2 may be located on a dicing line (SL) of a chip (wafer). The first region R1 may have the same structure as the element region, such as the memory cell region (memory cell region).
The isolation structure 102 is disposed in the substrate 100 of the first region R1, and defines at least one active region AA1. In this embodiment, the isolation structure 102 is, for example, located only in the first region R1. That is, the isolation structure 102 is not located in the second region R2. The isolation structure 102 may be located in the trench T. In addition, the isolation structures 102 and the active areas AA1 may be alternately arranged. The material of the isolation structure 102 is, for example, silicon oxide.
The substrate 100 in the active region AA1 has a fin 100a higher than the isolation structure 102. The fin 100a has a height H. The height H may be set as a distance between the top of the fin 100a and the top of the isolation structure 102.
The word line WL1 is located on the isolation structure 102 and the fin 100a of the first region R1. That is, the word line WL1 may extend through the isolation structure 102 of the first region R1 and over the fin 100a. A portion of word line WL1 may be located in trench T. In the present embodiment, the word line WL1 may be a buried word line (buried word line). The extending direction D1 of the word line WL1 may intersect the extending direction D2 of the fin 100a. In fig. 1, the angle between the extending direction D1 and the extending direction D2 is only an example, and the invention is not limited thereto. One skilled in the art can adjust the angle between the extending direction D1 and the extending direction D2 according to the product design. Further, the distance d1 from the top of the word line WL1 to the top of the isolation structure 102 may be greater than the distance d2 from the top of the word line WL1 to the top of the substrate 100 (i.e., the top of the fin 100 a). The material of the word line WL1 may be a conductive material, such as a metal (e.g., tungsten or aluminum).
The word line WL2 is located on the substrate 100 of the second region R2. In the present embodiment, the substrate 100 of the second region R2 may be regarded as the active region AA2. Since the isolation structure 102 is located only in the first region R1, the word line WL2 is not located on the isolation structure 102. Word line WL1 and word line WL2 may have the same length L and the same width W. In addition, the distance from the top of the word line WL2 to the top of the substrate 100 may be substantially equal to the distance from the top of the word line WL1 to the top of the substrate 100, i.e., the distance d2. The extending direction D3 of the word line WL2 may be parallel to the extending direction D1 of the word line WL 1. Word line WL1 and word line WL2 may be the same material. The material of the word line WL2 may be a conductive material, such as a metal (e.g., tungsten or aluminum).
In addition, the fin height monitor structure 10 may further include a dielectric layer (not shown) disposed between the word line WL1 and the substrate 100 and between the word line WL2 and the substrate 100, thereby isolating the word line WL1 from the substrate 100 and isolating the word line WL2 from the substrate 100. Since the dielectric layer has little influence on the method of monitoring the fin height, the description thereof is omitted here.
Based on the above, in the fin height monitoring structure 10 of the above embodiment, the word line WL1 is located on the isolation structure 102 of the first region R1 and the fin 100a of the substrate 100, so the resistance value of the word line WL1 is affected by the distance d1 from the top of the word line WL1 to the top of the isolation structure 102 and the distance d2 from the top of the word line WL1 to the top of the substrate 100. In addition, the word line WL2 is located on the substrate 100 of the second region R2, and thus the resistance value of the word line WL2 is only affected by the distance d2 from the top of the word line WL2 to the top of the substrate 100. In this way, the height of the fin 100a can be monitored by the relativity of the resistance value of the word line WL1 and the resistance value of the word line WL2, so that the height of the fin 100a can be effectively and timely monitored.
Referring to fig. 1 to 3, step S100 is performed to provide a fin height monitoring structure 10. The materials, arrangement and efficacy of the components in the fin height monitoring structure 10 are described in detail in the above embodiments, and are not described here.
Next, step S102 is performed to measure the resistance Rs1 of the word line WL 1. For example, the resistance value may be measured at both ends of the word line WL1 in the extending direction D1.
Then, step S104 is performed to measure the resistance value Rs2 of the word line WL2. For example, the resistance value may be measured at both ends of the word line WL2 in the extending direction D3. In the present embodiment, the resistance value Rs2 is, for example, larger than the resistance value Rs1.
Next, step S106 is performed to monitor the height of the fin 100a by the resistance Rs1 and the resistance Rs2. The resistance Rs1 of the word line WL1 is affected by the distance d1 and the distance d2, and the resistance of the word line WL2 is affected by the distance d2 only. In this way, the height H of the fin 100a can be monitored by the relativity of the resistance Rs1 and the resistance Rs2, so that the height H of the fin 100a can be effectively and timely monitored.
For example, the height of the fin 100a may be monitored by a ratio of the resistance value Rs1 to the resistance value Rs2. The ratio of the resistance value Rs1 to the resistance value Rs2 may be inversely related to the height of the fin 100a. That is, the lower the ratio of the resistance value Rs1 to the resistance value Rs2, the higher the height of the fin 100a. Further, the higher the ratio of the resistance value Rs1 to the resistance value Rs2, the lower the height of the fin 100a.
Further, step S108 may be performed to calculate the height H of the fin 100a. The method of calculating the height of the fin 100a may include the following steps.
As described above, the resistance value of the word line WL1 is Rs1, the resistance value of the word line WL2 is Rs2, the distance from the top of the word line WL1 to the top of the isolation structure 102 is d1, the distance from the top of the word line WL1 to the top of the substrate 100 and the distance from the top of the word line WL2 to the top of the substrate 100 are d2, and the height of the fin 100a is H.
In the present embodiment, the first region R1 is exemplified by having the same structure as the memory cell region, and the word lines WL1 and WL2 are exemplified by having the same length L, the same width W, and the same material. Since the word line WL1 and the word line WL2 are the same material, the word line WL1 and the word line WL2 may have the same resistivity ρ.
The formula of the resistance law is shown as formula I. In formula I, R represents resistance, ρ represents resistivity, L represents length, and a represents cross-sectional area.
[ I ]
The following simultaneous equations I-I can be obtained using the formula of the resistance law. In formulas I-I, n represents the number of memory cells through which the word line passes, raa1 represents the resistance of the word line WL1 at the active area AA1, rsti represents the resistance of the word line WL1 at the isolation structure 102, and Raa2 represents the resistance of the word line WL2 at the active area AA2.
[ I-I ]
Using the above formulas I-I, equations for d1 and H can be obtained. d1 may be represented by formula 1, and H may be represented by formula 2 below.
[ 1]
[ 2]
Next, the distance from the top of the word line WL2 to the top of the substrate 100 may be measured to obtain the value of d2. Since the isolation structure 102 is not provided in the second region R2, the value of d2 can be correctly measured when the distance measurement from the top of the word line WL2 to the top of the substrate 100 is performed.
In some embodiments, the value of Rs1, the value of Rs2, and the value of d2 may be taken into equation 2 to obtain the value of H.
Furthermore, in some embodiments, the value of Rs1, the value of Rs2, and the value of d2 may be taken into equation 1 to obtain the value of d1. Then, the value of d1 and the value of d2 are brought into formula 2 to obtain the value of H.
In summary, in the fin height monitoring structure and the fin height monitoring method in the above embodiments, the fin height can be monitored by the relativity of the resistance values of the word lines in different environments, so that the fin height can be monitored effectively and timely.
Although the invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather may be modified and practiced by those skilled in the art without departing from the spirit and scope of the present invention.

Claims (17)

1. A fin height monitoring structure, comprising:
a substrate including a first region and a second region;
a plurality of isolation structures in the substrate of the first region defining at least one active region, wherein the substrate in the at least one active region has at least one fin higher than the plurality of isolation structures;
a first word line located on the plurality of isolation structures and the at least one fin of the first region; and
a second word line on the substrate of the second region, wherein
The distance from the top of the first word line to the top of the isolation structure is greater than the distance from the top of the second word line to the top of the substrate of the second region.
2. The fin height monitoring structure of claim 1, wherein the first region and the second region are located on dicing streets of a chip.
3. The fin height monitoring structure of claim 1, wherein the plurality of isolation structures are located only in the first region.
4. The fin height monitoring structure of claim 1, wherein the second word line is not located on the plurality of isolation structures.
5. The fin height monitoring structure of claim 1, wherein the first word line and the second word line have a same length and a same width.
6. The fin height monitoring structure of claim 1, wherein the direction of extension of the first word line intersects the direction of extension of the at least one fin.
7. The fin height monitoring structure of claim 1, wherein the first word line and the second word line are the same material.
8. The fin height monitoring structure of claim 1, wherein a plurality of trenches are located in the substrate of the first region, and the plurality of isolation structures and a portion of the first word line are located in the plurality of trenches.
9. The fin height monitoring structure of claim 1, wherein the first word line comprises a buried word line.
10. The fin height monitoring method is characterized by comprising the following steps of:
providing a fin height monitoring structure as claimed in claim 1;
measuring a first resistance value of the first word line;
measuring a second resistance value of the second word line; and
the height of the at least one fin is monitored by the first resistance value and the second resistance value.
11. The method of claim 10, wherein the height of the at least one fin is monitored by a ratio of the first resistance value to the second resistance value.
12. The method of claim 11, wherein a ratio of the first resistance value to the second resistance value is inversely related to the height of the at least one fin.
13. The method of claim 10, wherein the second resistance value is greater than the first resistance value.
14. The method of claim 10, further comprising calculating a height of the at least one fin, wherein the method of calculating the height of the at least one fin comprises: let Rs1 be the first resistance value, rs2 be the second resistance value, d1 be the distance from the top of the first word line to the top of the plurality of isolation structures, d2 be the distance from the top of the first word line to the top of the substrate and d1 be the distance from the top of the second word line to the top of the substrate, and d1 be represented by formula 1:
[ 1]
15. The method of claim 14, wherein the method of calculating the height of the at least one fin further comprises setting the height of the at least one fin to H, and wherein H is represented by equation 2:
[ 2]
16. The method of claim 15, wherein the method of calculating the height of the at least one fin further comprises:
measuring the distance from the top of the second word line to the top of the substrate to obtain the value of d2: and
bringing the value of Rs1, the value of Rs2 and the value of d2 into the formula 2 to obtain the value of H.
17. The method of claim 15, wherein the method of calculating the height of the at least one fin further comprises:
measuring a distance from a top of the second word line to a top of the substrate to obtain a value of d 2;
bringing the value of Rs1, the value of Rs2 and the value of d2 into the formula 1 to obtain the value of d 1; and
bringing the value of d1 and the value of d2 into the formula 2 to obtain the value of H.
CN202011390869.3A 2019-12-24 2020-12-02 Structure and method for monitoring fin height Active CN113035843B (en)

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TW108147340A TWI722732B (en) 2019-12-24 2019-12-24 Fin height monitoring structure and fin height monitoring method

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CN103208517A (en) * 2012-01-16 2013-07-17 台湾积体电路制造股份有限公司 Control fin heights in FinFET structures
CN103292677A (en) * 2012-03-02 2013-09-11 台湾积体电路制造股份有限公司 Methods of extracting fin heights and overlap capacitance and structures for performing the same
CN107680969A (en) * 2017-11-13 2018-02-09 睿力集成电路有限公司 Asymmetric fin internal memory transistor and forming method thereof, semiconductor devices
KR20180071768A (en) * 2016-12-20 2018-06-28 삼성전자주식회사 Semiconductor device
CN108807534A (en) * 2017-05-03 2018-11-13 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof

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KR102184994B1 (en) * 2014-07-18 2020-12-01 삼성전자주식회사 Semiconductor device and method for fabricating the same
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103208517A (en) * 2012-01-16 2013-07-17 台湾积体电路制造股份有限公司 Control fin heights in FinFET structures
CN103292677A (en) * 2012-03-02 2013-09-11 台湾积体电路制造股份有限公司 Methods of extracting fin heights and overlap capacitance and structures for performing the same
KR20180071768A (en) * 2016-12-20 2018-06-28 삼성전자주식회사 Semiconductor device
CN108807534A (en) * 2017-05-03 2018-11-13 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
CN107680969A (en) * 2017-11-13 2018-02-09 睿力集成电路有限公司 Asymmetric fin internal memory transistor and forming method thereof, semiconductor devices

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CN113035843A (en) 2021-06-25
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