CN112967993A - Wafer bonding-releasing method - Google Patents
Wafer bonding-releasing method Download PDFInfo
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- CN112967993A CN112967993A CN202110145304.7A CN202110145304A CN112967993A CN 112967993 A CN112967993 A CN 112967993A CN 202110145304 A CN202110145304 A CN 202110145304A CN 112967993 A CN112967993 A CN 112967993A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004140 cleaning Methods 0.000 claims abstract description 45
- 239000003292 glue Substances 0.000 claims abstract description 41
- 239000002904 solvent Substances 0.000 claims abstract description 21
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 239000007921 spray Substances 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- -1 polyethylene Polymers 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 142
- 239000011521 glass Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 14
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- 230000001070 adhesive effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012459 cleaning agent Substances 0.000 description 3
- 238000004925 denaturation Methods 0.000 description 3
- 230000036425 denaturation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- 102100030751 Eomesodermin homolog Human genes 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a wafer bonding-breaking method, which comprises the following steps: (1) inputting the bonded wafer into a cleaning cavity; (2) aligning the edge of the bonded wafer by using a nozzle head in a cleaning cavity, and spraying a solvent; (3) removing the edge flash of the bonded wafer; (4) drying the bonded wafer obtained in the step (3); (5) inputting the dried bonded wafer into a laser scanning platform for bonding; the pressure of the nozzle head in the step (2) is 0.1-10 MPa. According to the wafer bonding method, the pressure of the nozzle head in the cleaning cavity is adjusted to enable the nozzle head to be aligned with the edge overflow glue and spray out a proper amount of solvent to dissolve and remove the edge overflow glue, the whole process is simple, the consumed time is short, and the wafer production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of laser de-bonding, in particular to a wafer de-bonding method.
Background
The ultraviolet laser de-bonding technique generally requires the use of two temporary bonding materials, namely a laser release material layer and a temporary bonding adhesive material layer. The temporary bonding material is mainly used for bonding a wafer and a carrier. The laser release material layer is a material layer which can be decomposed and debonded when irradiated by laser to realize the effect of debonding. However, in the actual use process, the laser de-bonding process often needs manual assistance and mechanical external force to separate the wafer pair, wherein the main reason is that the temporary bonding glue is coated in a spin manner due to edge effect, which causes the phenomenon that the glue layer at the edge position is thick in the middle area, during the hot-press bonding, due to high-temperature rheological property, the glue overflow phenomenon is easy to occur, the glue overflow part sticks to the epitaxial part of the wafer pair, and even though the spin-coating process is optimized, the glue overflow phenomenon cannot be effectively reduced. Therefore, the edge portion is not smoothly debonded after laser irradiation. In the actual production operation process, the excessive glue needs to be removed by manually scraping the excessive glue or other means to realize bonding removal, so that the production efficiency is greatly reduced. Meanwhile, if the operation is performed without removing the glue completely, the risk of separating and breaking pieces is likely to be caused, and the yield cannot be guaranteed.
CN111755377A discloses a wafer debonding method, which includes the following steps: step one, etching and removing silicon on the outer ring of the silicon wafer, wherein the silicon is subjected to glue modification or glue overflow; and step two, debonding the silicon wafer and the slide glass. Preparing a mask layer on the wafer side, wherein the mask layer is made of a positive photoresist or a negative photoresist, and the photoresist on the edge of the silicon wafer is removed through exposure and development processes; and directly etching the outer ring of the silicon wafer by a dry etching process. Aiming at the problems of the temporary bonding adhesive denaturation and the 'adhesive extrusion' of the thin wafer, the method discloses a debonding pretreatment method, which removes the adhesive denaturation or the silicon overflowing from the adhesive on the outer ring of the wafer by the pretreatment processes of mask preparation, etching edge removal and the like, and then performs the debonding process, thereby solving the problem that the debonding cannot be smoothly performed due to the temporary bonding adhesive denaturation and avoiding the risk of fragments. The open bonding-removing method is complex in operation and cannot effectively improve the production efficiency.
CN111627845A discloses a debonding apparatus and a debonding method thereof, wherein the debonding apparatus can utilize deformation of a roller to promote contact and adhesion between a tape and an edge of a semiconductor substrate, thereby enhancing adhesion between the tape and the semiconductor substrate, so that the tape can effectively remove bonding glue on the semiconductor substrate, improving production efficiency, and reducing production cost, but the debonding method disclosed herein can improve production efficiency to some extent, but has a limited improvement in cleaning efficiency of subsequent glass from the viewpoint of removing temporary bonding residual glue adhered to the surface of the glass edge.
In summary, it is important to develop a wafer debonding method that is simple and easy to operate and is efficient.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a wafer bonding-breaking method which is simple, easy to operate, efficient and beneficial to improving the production efficiency of wafers.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a wafer bonding-breaking method, which comprises the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) aligning the edge of the bonded wafer by using a nozzle head in a cleaning cavity, and spraying a solvent;
(3) removing the edge flash of the bonded wafer;
(4) drying the bonded wafer obtained in the step (3);
(5) inputting the dried bonded wafer into a laser scanning platform for bonding;
the pressure of the nozzle head in step (2) is 0.1 to 10MPa, for example, 1MPa, 2MPa, 3MPa, 4MPa, 5MPa, 6MPa, 7MPa, 8MPa, 9MPa, etc.
The invention provides a wafer de-bonding method, which aims at the edge overflow glue by adjusting the pressure of a nozzle head in a cleaning cavity to spray a proper amount of solvent to dissolve and remove the edge overflow glue.
The pressure of the nozzle head is adjusted to be 0.1-10MPa, the solvent can be fully cleaned until the edge of the solvent overflows by spraying the solvent in the range, and the direct impact on the wafer and the damage to the wafer caused by the high nozzle pressure can be avoided, so that the quality of the wafer is improved.
Preferably, the included angle between the nozzle head and the bonded wafer in the step (2) is 0-90 °, such as 10 °, 20 °, 30 °, 40 °, 50 °, 60 °, 70 °, 80 °, and the like.
The nozzle head is positioned above the wafer in an inclined mode and is not positioned on the same horizontal line with the wafer, on the premise that the angle of the nozzle head, namely the included angle between the nozzle head and the bonded wafer is set to be 0-90 degrees, edge glue overflow can be fully contacted with a solvent, and the risk of slicing and excessive cleaning caused by the fact that the solvent directly impacts the gap of the bonded wafer is avoided.
Preferably, the edge flash of the bonded wafer is removed in step (3) by using a flash processing part in a shape of a scraper or a brush. The excessive glue processing part in the shape of the scraper has high processing strength on excessive glue, but is easy to damage wafers; the brush-shaped glue overflowing processing part is soft and cannot damage the wafer, but the processing force is correspondingly small, so that the use requirements of the brush-shaped glue overflowing processing part and the wafer are selected according to the material of the wafer and the glue overflowing amount on the side face of the wafer.
Preferably, the material of the flash processing part is any one or a combination of at least two of polyethylene, polypropylene, polytetrafluoroethylene or sponge block.
Preferably, the step (2) specifically comprises: and (3) rotating the bonded wafer by vacuum adsorption on a turntable, and aligning the edge of the rotating bonded wafer by using a nozzle head in a cleaning cavity to spray a solvent.
Preferably, step (3) specifically comprises: and removing the edge flash of the bonded wafer in rotation.
Preferably, the bonded wafers are rotated at a speed of 50-5000rpm, such as 100rpm, 500rpm, 1000rpm, 1500rpm, 2000rpm, 2500rpm, 3000rpm, 3500rpm, 4000rpm, 4500rpm, etc., independently of each other in step (2) and step (3).
The bonded wafer is subjected to edge glue overflow removal in a rotating state, the rotating speed is 50-5000rpm, the rotating speed is adaptively adjusted according to the working condition, and the excessive rotating speed is not beneficial to full contact of a solvent and the edge glue overflow, so that the cleaning effect and efficiency are influenced.
Preferably, the bonded wafer is rotated in steps (2) and (3) for a total time of 10-300 seconds, such as 50 seconds, 100 seconds, 150 seconds, 200 seconds, 250 seconds, and the like.
The rotation time of the bonded wafer is the total time of the step (2) and the step (3), the rotation time is 10-300 seconds, the rotation time is too short, the edge overflow glue is not completely removed, the rotation time is too long, and the cleaning efficiency is low.
Preferably, the drying in step (4) is carried out by blowing nitrogen gas.
Preferably, the de-bonding in step (5) comprises two operations of laser scanning and chuck separation.
As a preferred technical solution, the wafer debonding method includes the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) adsorbing the bonded wafer on a turntable through vacuum and rotating at the speed of 50-5000rpm, adjusting the included angle between a nozzle head in a cleaning cavity and the wafer to be 0-90 degrees, aligning the nozzle head to the edge of the rotating bonded wafer, adjusting the pressure of the nozzle head to be 50-1000KPa, and spraying a solvent;
(3) removing the edge glue overflow of the bonded wafer in rotation by adopting a glue overflow processing part in a scraper shape or a brush shape in the cleaning cavity;
(4) blowing nitrogen gas to the bonded wafer in the step (3) for drying;
(5) and inputting the dried bonded wafer into a laser scanning platform, and performing laser scanning and sucker separation to obtain the unbonded wafer.
Compared with the prior art, the invention has the following beneficial effects:
the time for bonding and debonding the wafer by adopting the wafer bonding and debonding method is within 18.6 minutes, and the cleaning efficiency of the subsequent glass wafer is improved by more than 42 percent compared with the manual glue removal. And the mechanical operation can avoid the damage of manual degumming to the wafer, and is beneficial to industrial production.
Drawings
Fig. 1 is a schematic view of a wafer debonding method provided in example 1;
the method comprises the steps of 1-glass wafer, 2-laser corresponding material, 3-temporary bonding material, 4-device wafer, 5-edge flash, 6-nozzle head, 7-solvent and 8-flash processing part.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a wafer debonding method, wherein a bonded wafer includes a glass wafer 1, a laser-related material 2, a temporary bonding material 3, and a device wafer 4, which are sequentially stacked, and edge flash 5 is included on both sides of the bonded wafer, as shown in fig. 1, the wafer debonding method includes the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) the bonded wafer is adsorbed on a turntable through vacuum and rotates at the speed of 2500rpm, the included angle between a nozzle head 6 in a cleaning cavity and the wafer is adjusted to be 45 degrees, the nozzle head is aligned to the edge of the rotating bonded wafer, the pressure of the nozzle head is adjusted to be 500KPa, and a solvent 7 is sprayed out (purchased from Shenzhen commercialized Signal semiconductor materials Co., Ltd., brand name of temporary bonding glue cleaning agent TBR 2);
(3) removing the edge flash of the bonded wafer by using a flash processing part 8 in the cleaning cavity;
(4) blowing nitrogen gas to the bonded wafer in the step (3) for drying;
(5) inputting the dried bonded wafer into a laser scanning platform to carry out laser scanning and sucker separation to obtain a debonded wafer;
wherein, the steps (2) and (3) are time-consuming, i.e. the time for the bonded wafer to rotate is 150 seconds.
Example 2
The embodiment provides a wafer debonding method, where a bonded wafer is the same as in embodiment 1, and the wafer debonding method includes the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) the bonded wafer is adsorbed on a turntable through vacuum and rotates at the speed of 50rpm, the included angle between a nozzle head in a cleaning cavity and the wafer is adjusted to be 5 degrees, the nozzle head is aligned to the edge of the rotating bonded wafer, the pressure of the nozzle head is adjusted to be 50KPa, and a solvent 7 is sprayed out (purchased from Shenzhen commercialized Signal semiconductor materials Co., Ltd., brand name of temporary bonding glue cleaning agent TBR 2);
(3) removing the edge flash of the bonded wafer by using a flash processing part in a cleaning cavity;
(4) blowing nitrogen gas to the bonded wafer in the step (3) for drying;
(5) inputting the dried bonded wafer into a laser scanning platform, and performing laser scanning and sucker separation to obtain a de-bonded wafer;
wherein, the steps (2) and (3) are time-consuming, i.e. the time for the bonded wafer to rotate is 300 seconds.
Example 3
The embodiment provides a wafer debonding method, where a bonded wafer is the same as in embodiment 1, and the wafer debonding method includes the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) the bonded wafer is adsorbed on a turntable through vacuum and rotates at the speed of 5000rpm, the included angle between a nozzle head in a cleaning cavity and the wafer is adjusted to be 90 degrees, the nozzle head is aligned to the edge of the rotating bonded wafer, the pressure of the nozzle head is adjusted to be 1000KPa, and a solvent 7 (purchased from Shenzhen commercialized Signal semiconductor materials Co., Ltd., brand name of temporary bonding glue cleaning agent TBR2) is sprayed;
(3) removing the edge flash of the bonded wafer by using a flash processing part in a cleaning cavity;
(4) blowing nitrogen gas to the bonded wafer in the step (3) for drying;
(5) inputting the dried bonded wafer into a laser scanning platform, and performing laser scanning and sucker separation to obtain a de-bonded wafer;
wherein, the steps (2) and (3) are time-consuming, i.e. the time for the bonded wafer to rotate is 10 seconds.
Example 4
The method for debonding a wafer according to this embodiment is different from embodiment 1 in that the rotation speed of the bonded wafer is 6000rpm, and the rest is the same as embodiment 1.
Example 5
The method for debonding a wafer according to this embodiment is different from embodiment 1 in that the rotation speed of the bonded wafer is 20rpm, and the rest is the same as embodiment 1.
Example 6
The method for debonding a wafer according to this embodiment is different from embodiment 1 in that the time for the bonded wafer to rotate is 420 seconds, and the rest is the same as that in embodiment 1.
Example 7
The method for debonding a wafer according to this embodiment is different from embodiment 1 in that the time for the bonded wafer to rotate is 6 seconds, and the rest is the same as that in embodiment 1.
Comparative example 1
The wafer debonding method provided by the comparative example comprises the following steps: and removing edge glue overflow of the bonded wafer in a manual wiping mode, drying, and inputting into a laser scanning platform for de-bonding.
Comparative example 2
The wafer debonding method provided by this comparative example is different from that of example 1 in that the pressure of the nozzle head is 1500KPa, and the rest is the same as that of example 1.
Comparative example 3
The wafer debonding method provided by this comparative example is different from that of example 1 in that the pressure of the nozzle head is 20KPa, and the rest is the same as that of example 1.
Performance testing
Examples 1-7 and comparative examples 1-3 were tested as follows:
(1) time consumption: wafers with the same edge flash type and amount of glue were processed under the debonding conditions described in examples 1-7 and comparative examples 1-3, and the time for each bonded wafer to complete debonding was recorded.
(2) Cleaning efficiency of glass wafer: the glass wafers in the debonded wafers obtained in examples 1 to 7 and comparative examples 1 to 3 were cleaned, and the cleaning efficiency of the glass wafers was defined as: time consuming cleaning of each example/comparative example 1.
The test results are summarized in table 1.
TABLE 1
Analyzing the data in table 1, it can be seen that the time for debonding the wafer by using the debonding method for the wafer according to the present invention is within 18.6 minutes, the cleaning efficiency of the subsequent glass wafer is improved by more than 42% compared to the manual adhesive removal, the time for cleaning the subsequent glass wafer is within 10.2 minutes in examples 1 to 3, the cleaning efficiency of the subsequent glass wafer is improved by more than 55% compared to the manual adhesive removal, the time for debonding is shorter, and the cleaning efficiency of the subsequent glass wafer is higher.
As can be seen from analysis of comparative example 1 and example 1, comparative example 1 takes up to 35 minutes, while example 1 only requires 3.5 minutes, and because edge overflow glue is removed, subsequent glass wafer cleaning only requires one solvent to clean the wafer, and glue is removed by manual wiping, edge overflow glue has a certain residue, and two solvents are required to respectively clean the residual edge overflow glue and bonding glue in subsequent glass wafer processing, which takes a long time, so that example 1 improves the cleaning efficiency of the subsequent glass wafer by 67% compared with example 1, presumably, in a batch production process, the process of manually removing edge overflow glue takes up more time, and the wafer has a greater probability of breakage, and therefore, the wafer debonding method of the present invention has great advantages in terms of simplicity and high efficiency.
As can be seen from the analysis of comparative examples 2-3 and examples 1-3, the cleaning efficiency of the subsequent glass wafer of comparative examples 2-3 is obviously lower than that of examples 1-3, and it is proved that the pressure of the nozzle head is set within the range of 0.1-10MPa to perform wafer debonding, which is more beneficial to the cleaning of the subsequent glass wafer, and further, the production efficiency of the wafer is improved.
As can be seen from the analysis of examples 1 to 3 and examples 4 to 7, the cleaning efficiency of the glass wafer after the cleaning of examples 4 to 7 is significantly lower than that of examples 1 to 3, and it is proved that the wafer de-bonding method of the present invention requires adjusting the process parameters such as the rotation speed and time of the bonded wafer to a proper range, so that the wafer de-bonding method is time-saving and efficient, and is beneficial to the cleaning of the subsequent glass wafer, for example, the rotation speed of the bonded wafer is controlled to 50 to 5000rpm, and the rotation time of the bonded wafer is controlled to 10 to 300 seconds, so that the wafer after the de-bonding is more convenient in the subsequent glass wafer cleaning process.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. A wafer debonding method is characterized by comprising the following steps:
(1) inputting the bonded wafer into a cleaning cavity;
(2) aligning the edge of the bonded wafer by using a nozzle head in a cleaning cavity, and spraying a solvent;
(3) removing the edge flash of the bonded wafer;
(4) drying the bonded wafer obtained in the step (3);
(5) inputting the dried bonded wafer into a laser scanning platform for bonding;
the pressure of the nozzle head in the step (2) is 0.1-10 MPa.
2. The method of claim 1, wherein the nozzle head is angled at 0-90 ° with respect to the bonded wafer in step (2).
3. The method of claim 1 or 2, wherein the edge flash of the bonded wafer is removed in step (3) by using a flash processing member in a shape of a scraper or a brush.
4. The method of claim 3, wherein the flash processing member is made of one or a combination of at least two of polyethylene, polypropylene, polytetrafluoroethylene, and sponge.
5. The method for debonding a wafer according to any one of claims 1-4, wherein step (2) specifically comprises: and (3) rotating the bonded wafer by vacuum adsorption on a turntable, and aligning the edge of the rotating bonded wafer by using a nozzle head in a cleaning cavity to spray a solvent.
6. The method for debonding a wafer according to any one of claims 1-5, wherein step (3) specifically comprises: and removing the edge flash of the bonded wafer in rotation.
7. The method of claim 6, wherein in the step (2) and the step (3), the bonded wafer rotates at a speed of 50-5000 rpm.
8. The method for debonding a wafer according to claim 6 or 7, wherein the total time for the bonded wafer to rotate in steps (2) and (3) is 10-300 seconds.
9. The method for debonding a wafer according to any one of claims 1-8, wherein the drying in step (4) is performed by blowing nitrogen gas;
preferably, the de-bonding in step (5) comprises two operations of laser scanning and chuck separation.
10. The method for debonding a wafer according to any one of claims 1-9, wherein the laser debonding method comprises the steps of:
(1) inputting the bonded wafer into a cleaning cavity;
(2) adsorbing the bonded wafer on a turntable through vacuum and rotating at the speed of 50-5000rpm, adjusting the included angle between a nozzle head in a cleaning cavity and the wafer to be 0-90 degrees, aligning the nozzle head to the edge of the rotating bonded wafer, adjusting the pressure of the nozzle head to be 50-1000KPa, and spraying a solvent;
(3) removing the edge glue overflow of the bonded wafer in rotation by adopting a glue overflow processing part in a scraper shape or a brush shape in the cleaning cavity;
(4) blowing nitrogen gas to the bonded wafer in the step (3) for drying;
(5) and inputting the dried bonded wafer into a laser scanning platform, and performing laser scanning and sucker separation to obtain the unbonded wafer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113838777A (en) * | 2021-09-03 | 2021-12-24 | 北京中科镭特电子有限公司 | Laser bonding-breaking detection control system |
| CN113851395A (en) * | 2021-09-03 | 2021-12-28 | 北京中科镭特电子有限公司 | Laser dissociation bonding gas discharge device and method |
| CN116313985A (en) * | 2023-05-11 | 2023-06-23 | 广东鸿浩半导体设备有限公司 | Infrared heat-assisted ultraviolet laser bonding-breaking method and device |
| TWI809901B (en) * | 2022-05-27 | 2023-07-21 | 弘塑科技股份有限公司 | Integrated wafer debonding and cleaning apparatus and debonding and cleaning method |
| CN116995000A (en) * | 2023-09-26 | 2023-11-03 | 迈为技术(珠海)有限公司 | Debonding cleaning device and debonding cleaning method |
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| CN111834280A (en) * | 2020-07-24 | 2020-10-27 | 武汉新芯集成电路制造有限公司 | Temporary bonding method |
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| US20080014715A1 (en) * | 2006-07-13 | 2008-01-17 | Infineon Technologies Ag | Device and method for the processing of wafers |
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